JP2714561B2 - Copper alloy with good direct bonding properties - Google Patents
Copper alloy with good direct bonding propertiesInfo
- Publication number
- JP2714561B2 JP2714561B2 JP63324783A JP32478388A JP2714561B2 JP 2714561 B2 JP2714561 B2 JP 2714561B2 JP 63324783 A JP63324783 A JP 63324783A JP 32478388 A JP32478388 A JP 32478388A JP 2714561 B2 JP2714561 B2 JP 2714561B2
- Authority
- JP
- Japan
- Prior art keywords
- less
- copper alloy
- weight
- alloy
- direct bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体機器のリード材用銅合金に、ワイヤー
ボンディング用リード線を直接接着（ダイレクトボンデ
ィング）する事を可能にするダイレクトボンディング性
の良好な銅合金に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention has a good direct bonding property that enables a wire bonding lead wire to be directly bonded (direct bonded) to a copper alloy for a lead material of a semiconductor device. Copper alloys.
［従来の技術］ 従来、半導体機器は、まず銅または銅合金のリード材
用素材を打抜き又はエッチングにより所定の形状に成形
し、次に、半導体素子の接合部分および半導体素子をリ
ード材とを金線等でワイヤーボンディングするために、
リード材の所定部分へメッキを行い、ついでメッキされ
た部分へ半導体素子をダイボンドしさらに半導体素子と
リード材をワイヤーボンディング用リード線でワイヤー
ボンディングを行い、最後にこれを封止して製品として
いた。[Prior Art] Conventionally, semiconductor devices have been manufactured by first punching or etching a lead material of copper or copper alloy into a predetermined shape, and then forming a bonding portion of the semiconductor element and the lead material with the lead material. For wire bonding with wire etc.
A predetermined part of the lead material was plated, then the semiconductor element was die-bonded to the plated part, and the semiconductor element and the lead material were wire-bonded with a lead wire for wire bonding, and finally this was sealed to form a product. .
これから分かるように、リード材と半導体素子および
半導体素子とリード材との接合のためには、必ずメッキ
を必要としていた。As can be seen from the above, plating is always required for joining the lead material to the semiconductor element and the semiconductor element to the lead material.
ところがメッキ操作自体は、微小な個所へのメッキで
あるために、非常に高い精度を必要とし、メッキの良否
がダイボンドおよびワイヤーボンドに直接影響を与え
て、場合により不良品が発生した。However, the plating operation itself requires very high precision because the plating is performed on minute portions, and the quality of plating directly affects die bonding and wire bonding, and in some cases, defective products are generated.
また半導体素子およびリード材との材質の関係および
耐久性、電導性、付着性などからみて、金または銀のメ
ッキが行われているが、これが半導体機器の非常なコス
ト高を招いた。Further, gold or silver plating is performed in view of the relationship between the material of the semiconductor element and the lead material and the durability, electrical conductivity, adhesiveness, and the like, but this has resulted in extremely high cost of the semiconductor device.
このためメッキ厚やメッキ面積を減少させたり、ま
た、前記金や銀にかえて、卑金属を用いることなどを検
討しているが、あまり画期的な効果は上っていない。For this reason, reductions in plating thickness and plating area, and the use of base metals instead of gold and silver have been studied, but they have not produced much epoch-making effects.
さらに半導体素子のダイボンドのみをペーストで代替
させて接合する技術が開発されて、半導体素子のダイボ
ンドの際のメッキが一応不要となったが、あいかわやず
リード材と半導体素子とを金線で接合するワイヤーボン
ディングの為にはメッキが必要であり、工程数はいっこ
うに減少せず、根本的な解決策にはなっていない。Furthermore, a technology was developed to replace only the die bond of the semiconductor element with a paste, and plating was not necessary for the die bond of the semiconductor element.However, the lead material and the semiconductor element were joined with a gold wire. In order to perform wire bonding, plating is required, and the number of processes is not further reduced, and is not a fundamental solution.
ところで、ダイレクトボンディング性を改善させるべ
く、過去にリードフレーム材料の観点から若干の検討は
行われている。例えば特公昭62−46071では材料の表面
粗さが最大高さ（Rmax）で0.5μｍ以下とする事、ある
いはさらに析出物、介在物等の単一面積が３×10-6mm2
以下にする事でダイレクトボンディング性が改善される
事がわかっている。By the way, some studies have been made in the past from the viewpoint of lead frame materials in order to improve the direct bonding property. For example, Japanese Patent Publication No. Sho 62-46071 requires that the surface roughness of the material be 0.5 μm or less in maximum height (R max ), or that the single area of precipitates and inclusions is 3 × 10 −6 mm 2
It has been found that direct bonding can be improved by the following.
［発明が解決しようとする課題］ 実際の製品に上記公知技術を適用した場合、要求され
る信頼性が高いIC、LSI、VLSI製品としては、まだまだ
満足できるレベルになっておらず、一部トランジスター
用に使用されている現状である。[Problem to be Solved by the Invention] When the above-mentioned known technology is applied to an actual product, the required reliability of an IC, LSI, or VLSI product that is required is not yet at a satisfactory level. It is currently used for
従って、ダイレクトボンディング性という観点から一
層の改善をはかり、トランジスターからVLSIまでの全て
の半導体製品に適用できるリードフレーム用銅合金が望
まれている。Therefore, a copper alloy for a lead frame which is further improved from the viewpoint of direct bonding property and is applicable to all semiconductor products from transistors to VLSIs is desired.
［課題を解決するための手段］ 本発明者らは、ダイレクトボンディング性に及ぼす種
々の材料因子について検討を行ったところ、材料の表面
粗さ規定はRmaxでは不十分であり、中心線平均粗さ（R
a）といった全体的な表面粗さのレベルの規定が必要で
あることを見出した。従来Rmax0.5μｍ以下といわれて
いたが、一部Rmax0.5μｍを越えてもRaがある値以下で
あれば優れたダイレクトボンディング性を示す事等が判
明した。[Means for Solving the Problems] The present inventors have studied various material factors affecting the direct bonding property. As a result, the surface roughness of the material is not sufficiently defined by Rmax , and the center line average roughness is not sufficient. Sa (R
It has been found that it is necessary to define the overall surface roughness level such as a). Conventionally, it was said that R max was 0.5 μm or less, but it was found that even if R max exceeded 0.5 μm, if the Ra was a certain value or less, excellent direct bonding properties were exhibited.
さらに、材料の硬さもある値以上にしなければならな
い事を見出した。In addition, it has been found that the hardness of the material must be increased to a certain value or more.
そこで、本発明はCr0.1〜1.5重量％、Zr0.05〜1.0重
量％の１種又は２種を含み、残部Cu及び不可避不純物か
らなる合金の材料表面硬さがHv140以上で、かつ、表面
粗さが中心線平均粗さ（Ra）で0.15μｍ以下、最大高さ
（Rmax）で0.8μｍ以下となるように調整することによ
り、ワイヤーボンディング用リード線を直接接着可能と
したことを特徴とするダイレクトボンディング性の良好
な銅合金およびCr0.1〜1.5重量％、Zr0.05〜1.0重量％
の１種又は２種を含み、残部Cu及び不可避不純物からな
る合金に副成分としてＰ、As、Sb、Fe、Co、Ni、Sn、A
l、Ti、Si、Mg、Be、Mn、Zn、In、Ｂ、Hf、希土類元素
からなる群より選択された１種又は２種以上を総量で0.
001〜2.0重量％添加した合金の材料表面を表面硬さがHv
140以上でかつ表面粗さが中心線平均粗さ（Ra）で0.15
μｍ以下、最大高さ（Rmax）で0.8μｍ以下となるよう
に調整することにより、ワイヤーボンディング用リード
線を直接接着可能としたことを特徴とするダイレクトボ
ンディング性の良好な銅合金および前記合金で析出粒子
が５μｍ以下であるダイレクトボンディング性の良好な
銅合金および前記合金で酸素含有量が10ppm以下である
ダイレクトボンディング性の良好な銅合金である。Therefore, the present invention includes one or two kinds of Cr 0.1 to 1.5% by weight and Zr 0.05 to 1.0% by weight, and the material surface hardness of the alloy composed of the balance Cu and unavoidable impurities is Hv140 or more, and By adjusting the roughness so that the center line average roughness (Ra) is 0.15 μm or less and the maximum height (R max ) is 0.8 μm or less, the lead wire for wire bonding can be directly bonded. Copper alloy with good direct bonding properties and Cr 0.1-1.5% by weight, Zr 0.05-1.0% by weight
Containing one or two of the following, with P, As, Sb, Fe, Co, Ni, Sn, A
l, one, two or more selected from the group consisting of Ti, Si, Mg, Be, Mn, Zn, In, B, Hf, and rare earth elements in a total amount of 0.
The surface hardness of the material surface of the alloy added with 001-2.0% by weight is Hv
140 or more and surface roughness 0.15 as center line average roughness (Ra)
a copper alloy having a good direct bonding property, wherein the lead wire for wire bonding can be directly bonded by adjusting the maximum height ( Rmax ) to be 0.8 μm or less. And a copper alloy having good direct bonding properties with a precipitation particle size of 5 μm or less and a copper alloy having good direct bonding properties with an oxygen content of 10 ppm or less.
次に合金成分並びに他の条件の限定理由を説明する。
Crの含有量を0.1〜1.5重量％とする理由は、Cr含有量が
0.1重量％未満では高強度が得られず、逆にCr含有量が
1.5重量％を越えると加工性が低下し、半田付け性も低
下する為である。Next, the reasons for limiting the alloy components and other conditions will be described.
The reason for setting the Cr content to 0.1 to 1.5% by weight is that the Cr content is
If the content is less than 0.1% by weight, high strength cannot be obtained.
If the content exceeds 1.5% by weight, workability is reduced and solderability is also reduced.
Zr含有量を0.05〜1.0重量％とした理由は、Zr含有量
が0.05重量％未満では高強度を示す合金が得られず、Zr
含有量が1.0重量％を超えると加工性、導電性の低下が
著しくなり、また半田付け性も低下する為である。The reason for setting the Zr content to 0.05 to 1.0% by weight is that if the Zr content is less than 0.05% by weight, an alloy exhibiting high strength cannot be obtained,
If the content exceeds 1.0% by weight, the workability and the conductivity are significantly reduced, and the solderability is also reduced.
副成分として、Ｐ、As、Sb、Fe、Co、Ni、Sn、Al、T
i、Si、Mg、Be、Mn、Zn、In、Ｂ、Hf、希土類元素から
なる群より選択された１種以上の総量が0.001重量％未
満では高強度でかつ耐食性のある合金が得られず、また
2.0重量％を超えると導電性の低下及び半田付けの低下
が著しくなる為である。P, As, Sb, Fe, Co, Ni, Sn, Al, T
If the total amount of at least one selected from the group consisting of i, Si, Mg, Be, Mn, Zn, In, B, Hf, and a rare earth element is less than 0.001% by weight, an alloy having high strength and corrosion resistance cannot be obtained. ,Also
If the content is more than 2.0% by weight, the conductivity and the soldering decrease significantly.
また酸素含有量を100ppm以下とした理由は、10ppmを
越えるとめっき密着性が低下するためである、析出粒子
を５μｍ以下にした理由は、５μｍを越えると半田付け
性、めっき密着性が低下するためである。The reason why the oxygen content is set to 100 ppm or less is that plating adhesion decreases when the content exceeds 10 ppm. The reason why the precipitated particles are set to 5 μm or less is that solderability and plating adhesion decrease when the content exceeds 5 μm. That's why.
表面粗さをHv140以上とした理由は、Hv140未満ではダ
イレクトボンディング後のボンディングワイヤーの接着
強度が低く、樹脂封止工程等での剥離を起こす場合があ
るためである。The reason for setting the surface roughness to Hv140 or higher is that if the surface roughness is lower than Hv140, the bonding strength of the bonding wire after direct bonding is low, and peeling may occur in a resin sealing step or the like.
表面粗さを中心線平均粗さ（Ra）で0.15μｍ以下、最
大高さ（Rmax）で0.8μｍ以下とした理由は、安定して
強い接着を得るには、表面の平均的レベルが低く、かつ
部分的にも有害に粗さにならない事が必要であるためで
ある。すなわち、本合金系ではRaが0.15μｍを超えると
接着強度が低下し、また、Raが0.15μｍ以下であっても
Rmaxが0.8μｍを超えるとその部分の密着強度が低下
し、前述したように樹脂封止工程等でのストレスにより
剥離を起こす場合があり、信頼性を損ねるためである。The reason why the surface roughness is 0.15 μm or less in center line average roughness (Ra) and 0.8 μm or less in maximum height ( Rmax ) is that the average level of the surface is low in order to obtain stable and strong adhesion. This is because it is necessary to prevent the surface from being harmfully rough even partially. That is, in the present alloy system, when Ra exceeds 0.15 μm, the adhesive strength is reduced, and even when Ra is 0.15 μm or less.
If R max exceeds 0.8 μm, the adhesion strength at that portion is reduced, and as described above, peeling may occur due to stress in the resin sealing step or the like, and reliability is impaired.
［実施例］ 第１表に示す本発明合金をインゴットから熱間圧延さ
らには冷間圧延、焼鈍（溶体化焼鈍及び時効熱処理を含
む）のくり返しにより0.25mm厚さの板とした。この際、
表面硬さの違いは時効熱処理後圧延したり、さらにそれ
を熱処理したり、過時効させたり、溶体化させるといっ
た方法を用い作り分けた。[Example] The alloy of the present invention shown in Table 1 was repeatedly subjected to hot rolling, cold rolling, and annealing (including solution annealing and aging heat treatment) from an ingot to form a 0.25 mm thick plate. On this occasion,
The difference in surface hardness was determined using methods such as rolling after aging heat treatment, further heat treatment, overaging, and solution treatment.
また、表面粗さは各種表面粗さの圧延ロールを用いた
り、最終板厚になった後、各種粗さの表面研摩を行い作
製した。Further, the surface roughness was prepared by using a roll having various surface roughness, or after finishing the final plate thickness, polishing the surface with various surface roughness.
こうして製造した各種試料にワイヤーボンディングを
行い、見かけ上の接合状態を観察するとともに、プルテ
ストによる接合強度の測定並びに破断箇所の観察を行っ
た。Wire bonding was performed on the various samples manufactured in this way, and the apparent bonding state was observed, and the bonding strength was measured by a pull test and the fracture point was observed.
なお、ワイヤーボンディングとしてサーモソニック法
を用い、以下に示すボンディング条件で行った。The bonding was performed under the following bonding conditions using a thermosonic method as wire bonding.
ボンディングワイヤの材質多びワイヤ径： Cu線25μm φ、雰囲気:10Vol％H2−Ar、超音波出力:0.1
W、基板温度:300℃、加圧力:80g、時間:2msec。Bonding wire material and wire diameter: Cu wire 25μm φ, atmosphere: 10Vol% H 2 -Ar, ultrasonic output: 0.1
W, substrate temperature: 300 ° C, pressure: 80 g, time: 2 msec.
結果を第１表に示す。この結果からもわかるように表
面硬さがHv140以上でかつ表面粗さもRaで0.15μｍ以
下、Rmaxで0.8μｍ以下という全ての条件がそろった時
に始めて、従来のメッキ材並のボンディング性が得られ
る事がわかる。The results are shown in Table 1. Surface hardness as can be seen from this result and the surface roughness is Hv140 more than 0.15μm or less in Ra, beginning when all the condition that 0.8μm or less aligned with R max, bonding of conventional plating material parallel is obtained I understand that it can be done.
［発明の効果］ 本発明は、特定の成分系の銅合金で、表面硬さ、表面
粗さ等を特定の範囲内になるように作り込むことによ
り、ダイレクトボンディング性を改善し、IC用としても
信頼性を持って使用可能ならしめたもので、しかもその
製作に当り、メッキ工程を省き、コストを大巾に減少さ
せる極めて実用的の高いものである。 [Effects of the Invention] The present invention improves the direct bonding property by making the surface hardness, surface roughness, etc., within a specific range with a copper alloy of a specific component system, thereby improving the direct bonding property for ICs. Is highly reliable and can be used with high reliability. In addition, in its manufacture, the plating step is omitted and the cost is greatly reduced.
フロントページの続き (72)発明者 藤本 栄一 大阪府東大阪市岩田町２丁目３番１号 タツタ電線株式会社内 (56)参考文献 特開 昭63−312934（ＪＰ，Ａ) 特開 昭63−312935（ＪＰ，Ａ) 特開 昭62−18744（ＪＰ，Ａ) 特開 昭63−93837（ＪＰ，Ａ) 特開 昭61−183425（ＪＰ，Ａ)Continuation of the front page (72) Inventor Eiichi Fujimoto 2-3-1 Iwatacho, Higashiosaka-shi, Osaka Tatsuta Electric Wire Co., Ltd. (56) References JP-A-63-312934 (JP, A) JP-A-63-63 312935 (JP, A) JP-A-62-18744 (JP, A) JP-A-63-93837 (JP, A) JP-A-61-183425 (JP, A)
Claims (4)
１種又は２種を含み、残部Cu及び不可避不純物からなる
合金の材料表面を表面硬さがHv140以上で、かつ表面粗
さが中心線平均粗さ（Ra）で0.15μｍ以下、最大高さ
（Rmax）で0.8μｍ以下となるように調整することによ
り、ワイヤーボンディング用リード線を直接接着可能と
したことを特徴とするダイレクトボンディング性の良好
な銅合金。1. A material surface of an alloy containing 0.1 to 1.5% by weight of Cr and 0.05 to 1.0% by weight of Zr, the balance comprising Cu and inevitable impurities having a surface hardness of Hv140 or more, and By adjusting the surface roughness so that the center line average roughness (Ra) is 0.15 μm or less and the maximum height (R max ) is 0.8 μm or less, it is possible to directly bond the lead wire for wire bonding. Copper alloy with good direct bonding characteristics.
１種又は２種を含み、残部Cu及び不可避不純物からなる
合金に副成分としてＰ、As、Sb、Fe、Co、Ni、Sn、Al、
Ti、Si、Mg、Be、Mn、Zn、In、Ｂ、Hf、希土類元素から
なる群より選択された１種又は２種以上を総量で0.001
〜2.0重量％添加した合金の材料表面を表面硬さがHv140
以上で、かつ、表面粗さが中心線平均粗さ（Ra）で0.15
μｍ以下、最大高さ（Rmax）で0.8μｍ以下となるよう
に調整することにより、ワイヤーボンディング用リード
線を直接接着可能としたことを特徴とするダイレクトボ
ンディング性の良好な銅合金。2. An alloy containing 0.1 to 1.5% by weight of Cr and 0.05 to 1.0% by weight of Zr, and P, As, Sb, Fe, Co as an auxiliary component in an alloy comprising the balance of Cu and inevitable impurities. , Ni, Sn, Al,
One or more selected from the group consisting of Ti, Si, Mg, Be, Mn, Zn, In, B, Hf, and rare earth elements in a total amount of 0.001
The surface hardness of the alloy material added ~ 2.0% by weight is Hv140
And the surface roughness is 0.15 in center line average roughness (Ra)
A copper alloy having a good direct bonding property, wherein a lead wire for wire bonding can be directly bonded by adjusting the maximum height (R max ) to be 0.8 μm or less.
（１）、（２）記載の銅合金。3. The copper alloy according to claim 1, wherein the precipitated particles have a size of 5 μm or less.
囲（１）、（２）あるいは（３）記載の銅合金。4. The copper alloy according to claim 1, wherein said copper alloy has an oxygen content of 10 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324783A JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324783A JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02170932A JPH02170932A (en) | 1990-07-02 |
| JP2714561B2 true JP2714561B2 (en) | 1998-02-16 |
Family
ID=18169626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63324783A Expired - Fee Related JP2714561B2 (en) | 1988-12-24 | 1988-12-24 | Copper alloy with good direct bonding properties |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2714561B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005028689A1 (en) | 2003-09-19 | 2005-03-31 | Sumitomo Metal Industries, Ltd. | Copper alloy and method for production thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705125A (en) * | 1992-05-08 | 1998-01-06 | Mitsubishi Materials Corporation | Wire for electric railways |
| EP0569036B1 (en) * | 1992-05-08 | 1998-03-11 | Mitsubishi Materials Corporation | Wire for electric railways and method of producing the same |
| JP2006286604A (en) * | 2005-03-07 | 2006-10-19 | Furukawa Electric Co Ltd:The | Metallic material for wiring connection fixture |
| WO2009016706A1 (en) | 2007-07-27 | 2009-02-05 | Materials Solution Inc. | Copper alloy material |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061798B2 (en) * | 1985-07-17 | 1994-01-05 | 株式会社神戸製鋼所 | Lead frame |
| JPS6393837A (en) * | 1986-10-07 | 1988-04-25 | Furukawa Electric Co Ltd:The | Copper alloy for electronic equipment and its production |
| JPS63312935A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Copper alloy material for semiconductor lead frame |
| JPS63312934A (en) * | 1987-06-16 | 1988-12-21 | Hitachi Cable Ltd | Lead frame material for semiconductor |
-
1988
- 1988-12-24 JP JP63324783A patent/JP2714561B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005028689A1 (en) | 2003-09-19 | 2005-03-31 | Sumitomo Metal Industries, Ltd. | Copper alloy and method for production thereof |
| US10023940B2 (en) | 2003-09-19 | 2018-07-17 | Nippon Steel & Sumitomo Metal Corporation | Copper alloy and process for producing the same |
| US10106870B2 (en) | 2003-09-19 | 2018-10-23 | Nippon Steel & Sumitomo Metal Corporation | Copper alloy and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02170932A (en) | 1990-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |