JP2705696B2 - Sample stage - Google Patents
Sample stageInfo
- Publication number
- JP2705696B2 JP2705696B2 JP34498396A JP34498396A JP2705696B2 JP 2705696 B2 JP2705696 B2 JP 2705696B2 JP 34498396 A JP34498396 A JP 34498396A JP 34498396 A JP34498396 A JP 34498396A JP 2705696 B2 JP2705696 B2 JP 2705696B2
- Authority
- JP
- Japan
- Prior art keywords
- stage
- sample
- diffraction grating
- sample stage
- uneven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Details Of Measuring And Other Instruments (AREA)
- Sampling And Sample Adjustment (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、寸法測長用の寸法校正
を行う測長用校正部材及び校正部材の作製方法であっ
て、特にサブミクロン以下の微小寸法に対応した電子ビ
ーム測長に好適な測長用部材及びその作製方法に関す
る。
【０００２】
【従来の技術】従来の装置は、特開昭５９−１２３１４
９号に記載のように、寸法校正機能は全くなく、単に試
料観察点の移動の機能のみを有していた。また測長用部
材としては、特開昭６１−２９２５０５号公報に異方性
エッチングにより作製される鋸歯状の測定用基準体が開
示されている。
【０００３】
【発明が解決しようとする課題】上記従来技術は、鋸歯
状の回折格子について開示していたが検出信号のＳ／Ｎ
について問題があった。
【０００４】本発明の目的は、移動ステージ上に絶対校
正用部材を配置することにより、常に高い寸法精度と安
定性を付加することにある。
【０００５】
【課題を解決するための手段】上記目的は、回折角測定
（光学式測定）で保証された絶対校正用回折格子を、移
動ステージに配置することにより達成される。
【０００６】すなわち、上記絶対校正用回折格子は、１
μｍ以下の微細な寸法で、電子ビーム走査時の２次電子
信号のＳＮ比が高く、その寸法値が他の測定手段で保証
されることが必須条件である。
【０００７】上記目的を達成するために、１μｍ以下の
寸法を高い精度でパターニングできるレーザ干渉露光方
式と、微細でかつアスペクト比の高い垂直断面構造が作
製できるＳｉもしくは化合物半導体の（１１０）基板と
湿式異方性エッチングを組合わせることにより、（１１
１）面で形成される垂直断面構造を有し、かつ、２次電
子信号の高いＳＮ比が得られる寸法校正用回折格子を作
製した。本回折格子は、一定のピッチを有することか
ら、単一波長光源を入射、回折させることによりその回
折角からピッチ寸法を保証することにより、上記目的を
達成することができる。またピッチ寸法の保証は、ステ
ージ組込後も、ステージ移動量とピッチ移動の対応から
も達成できる。
【０００８】
【作用】（１１０）Ｓｉもしくは（１１０）化合物半導
体基板上にレーザ干渉露光方式と湿式異方性エッチング
によりパターニングされた回折格子は、０．１μｍピッ
チ程度まで加工することが可能で、その精度は回折角測
定により０．００１μｍまで保証できる特徴がある。こ
の回折格子を移動ステージ上に配置し、試料を測長する
前に回折格子を測長することで、いつの段階でも絶対校
正が可能となる。また、回折格子を、ステージ移動方向
に垂直な方向に設置することで、ステージ移動量と移動
した回折格子のピッチ数との対応により、装置に組込後
も、絶対寸法値を保証することが可能となる。
【０００９】
【実施例】以下、本発明の一実施例を図１，図２，図３
により説明する。
【００１０】図１に本発明の概略構成を示す。移動ステ
ージは、Ｘ方向に移動し、その移動量は、各々レーザ干
渉計により測定される。絶対校正用に用いた回折格子
は、（１１０）Ｓｉ基板に、Ｈｅ−Ｃｄレーザによる干
渉露光によるパターニングを用い、イソプロピルアルコ
ール飽和ＫＯＨ水溶液（３０ｗｔ％，８０℃）の異方性
エッチにより得られ、ピッチ０．２８μｍ，深さ１μｍ
であり、回折角の測定からそのピッチ寸法精度は０．０
１μｍ以下であった。（図２）この回折格子を電子ビー
ムで走査した場合得られる２次電子波形は、図３に示す
通りＳＮ比の良い良好なものが得られた。
【００１１】次に電子ビームを固定しステージを移動さ
せ移動したピッチ寸法と、レーザ干渉計によるステージ
移動量の測定から、その精度は０．０１６μｍで保証さ
れていた。以上の様に、２つの異なる測定方法により
０．０１μｍの精度で絶対寸法が保証された。
【００１２】本実施例ではステージがＸ方向のみの移動
の場合について説明したが、Ｙ方向についても移動方向
に垂直な方向に本実施例で用いた回折格子をステージ上
に設置すれば全く同じ効果が得られることは言うまでも
ない。
【００１３】
【発明の効果】本発明によれば、測長寸法の絶対校正
を、ステージ内の標準試料（回折格子）により行なえる
ので、これまで実現されなかった絶対寸法を高い精度で
保証できる。また標準試料の絶対寸法についても、組込
前の光学測定、組込後はステージ移動量測定方式により
常に高精度に保証される。
【００１４】さらに、本発明で用いる（１１０）Ｓｉま
たは（１１０）化合物半導体基板で作製する回折格子は
他の回折格子に比べ溝の深い回折格子が作製できるの
で、２次電子信号が良好でかつ、電子線照射による汚染
の影響が少なく経時変化がないことから、半永久的に使
用できる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a length-measuring calibration member for performing dimension calibration for dimension measurement and a method of manufacturing the calibration member. The present invention relates to a length measuring member suitable for electron beam length measurement corresponding to minute dimensions and a method for manufacturing the same. 2. Description of the Related Art A conventional apparatus is disclosed in Japanese Patent Application Laid-Open No. 59-12314.
As described in No. 9, there was no dimension calibration function, but only a function of moving the sample observation point. As a length measuring member, Japanese Patent Application Laid-Open No. 61-292505 discloses a saw-toothed measuring reference body prepared by anisotropic etching. [0003] The above prior art discloses a sawtooth diffraction grating, but the S / N ratio of a detection signal is high.
There was a problem about. An object of the present invention is to always provide high dimensional accuracy and stability by disposing an absolute calibration member on a moving stage. [0005] The above object is achieved by disposing an absolute calibration diffraction grating guaranteed by diffraction angle measurement (optical measurement) on a moving stage. That is, the diffraction grating for absolute calibration is
It is an essential condition that, with a fine dimension of μm or less, the SN ratio of the secondary electron signal at the time of electron beam scanning is high, and the dimension value is guaranteed by other measuring means. In order to achieve the above object, a laser interference exposure method capable of patterning a dimension of 1 μm or less with high accuracy, and a Si or compound semiconductor (110) substrate capable of producing a fine vertical cross-sectional structure having a high aspect ratio. By combining wet anisotropic etching, (11
1) A diffraction grating for dimensional calibration, which has a vertical cross-sectional structure formed on a plane and can obtain a high SN ratio of a secondary electron signal, was manufactured. Since the present diffraction grating has a constant pitch, the above-mentioned object can be achieved by assuring a pitch dimension from a diffraction angle by making a single wavelength light source incident and diffracted. In addition, the pitch dimension can be assured even after the stage is assembled, from the correspondence between the stage movement amount and the pitch movement. The diffraction grating patterned on a (110) Si or (110) compound semiconductor substrate by a laser interference exposure method and wet anisotropic etching can be processed to a pitch of about 0.1 μm. There is a feature that the accuracy can be guaranteed to 0.001 μm by diffraction angle measurement. By arranging the diffraction grating on a moving stage and measuring the length of the diffraction grating before measuring the length of the sample, absolute calibration can be performed at any stage. In addition, by setting the diffraction grating in a direction perpendicular to the stage moving direction, the absolute dimensional value can be guaranteed even after being incorporated into the device by the correspondence between the stage movement amount and the pitch number of the moved diffraction grating. It becomes possible. FIG. 1, FIG. 2, and FIG. 3 show an embodiment of the present invention.
This will be described below. FIG. 1 shows a schematic configuration of the present invention. The moving stage moves in the X direction, and the amount of movement is measured by a laser interferometer. The diffraction grating used for the absolute calibration is obtained by anisotropic etching of isopropyl alcohol saturated KOH aqueous solution (30 wt%, 80 ° C.) on a (110) Si substrate using patterning by interference exposure with a He—Cd laser, Pitch 0.28 μm, depth 1 μm
From the measurement of the diffraction angle, the pitch dimensional accuracy is 0.0
It was 1 μm or less. (FIG. 2) As shown in FIG. 3, the secondary electron waveform obtained when this diffraction grating was scanned with an electron beam was a good one having a good SN ratio. Next, from the measurement of the pitch dimension of moving the stage by moving the stage while fixing the electron beam, and the measurement of the stage movement amount by the laser interferometer, the accuracy was guaranteed to be 0.016 μm. As described above, the absolute dimensions were guaranteed with an accuracy of 0.01 μm by using two different measurement methods. In this embodiment, the case where the stage moves only in the X direction has been described. However, if the diffraction grating used in this embodiment is mounted on the stage in the direction perpendicular to the moving direction in the Y direction, the same effect can be obtained. Needless to say, this is obtained. According to the present invention, the absolute calibration of the measured dimension can be performed using the standard sample (diffraction grating) in the stage, so that the absolute dimension that has not been realized can be guaranteed with high accuracy. . Also, the absolute dimensions of the standard sample are always assured with high accuracy by optical measurement before assembling and after the assembling by the stage movement amount measuring method. Further, a diffraction grating formed on the (110) Si or (110) compound semiconductor substrate used in the present invention can produce a diffraction grating having a deeper groove than other diffraction gratings. It can be used semi-permanently because the influence of contamination by electron beam irradiation is small and there is no change with time.
【図面の簡単な説明】
【図１】本発明の一実施例の概略構成を示す図。
【図２】本発明で用いた回折格子の断面図。
【図３】その回折格子から得られた２次電子信号波形を
示す図。
【符号の説明】
１…試料、２…ステージ駆動モータ、３…試料移動ステ
ージ、４…レーザ干渉測定器、５…回折格子、６…電子
ビーム、７…（１１０）Ｓｉ基板、８…（１１１）Ｓｉ
結晶面。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a schematic configuration of an embodiment of the present invention. FIG. 2 is a sectional view of a diffraction grating used in the present invention. FIG. 3 is a view showing a secondary electron signal waveform obtained from the diffraction grating. [Description of Signs] 1 ... sample, 2 ... stage drive motor, 3 ... sample moving stage, 4 ... laser interferometer, 5 ... diffraction grating, 6 ... electron beam, 7 ... (110) Si substrate, 8 ... (111) ) Si
Crystal face.
Claims (1)
ッチングにより形成された斜面を有する回折格子に比べ
てアスペクト比が高い垂直断面構造を有する回折格子を
該ステージ上に設けたことを特徴とする試料ステージ。 ２．上記アスペクト比が１以上であることを特徴とする
請求項１記載の試料ステージ。 ３．試料を保持する試料ステージにおいて光学的手段に
より絶対寸法が求められている（１１０）面と（１１
１）面で構成される凹凸状の標準部材を該ステージ上に
設けたことを特徴とする試料ステージ。 ４．粒子線と試料を保持するステージを相対に走査する
試料ステージにおいて該粒子線を走査して得られる信号
のピッチが等間隔で凹凸部材の１つの凸部からの信号が
２つの直線の交点となる２つのピークを発生する凹凸状
回折格子を該ステージ上に設けたことを特徴とした試料
ステージ。 ５．上記試料ステージが一定方向に移動するステージで
上記凹凸状標準部材もしくは回折格子の凹凸パターンが
移動方向にたいして直交するように該ステージ上に設け
たことを特徴とする請求項１から４のいずれか記載の試
料ステージ。 ６．上記移動方向が互いに直交する２方向に移動するス
テージで上記凹凸状標準部材もしくは回折格子の凹凸パ
ターンがそれぞれの移動方向にたいして直交するように
該ステージ上に２つ設けたことを特徴とする請求項５記
載の試料ステージ。(57) [Claims] A sample stage for holding a sample, wherein a diffraction grating having a vertical sectional structure having a higher aspect ratio than a diffraction grating having a slope formed by wet anisotropic etching is provided on the stage. 2. 2. The sample stage according to claim 1, wherein the aspect ratio is 1 or more. 3. On the sample stage for holding the sample, the (110) plane and the (11) plane whose absolute dimensions are determined by optical means.
1) A sample stage, wherein a standard member having an uneven shape composed of a surface is provided on the stage. 4. The pitch of the signal obtained by scanning the particle beam on the sample stage that relatively scans the particle beam and the stage that holds the sample is equidistant and the signal from one projection of the uneven member is the intersection of two straight lines. A sample stage, wherein an uneven diffraction grating that generates two peaks is provided on the stage. 5. 5. The sample stage according to claim 1, wherein the sample stage moves in a certain direction, and the uneven standard member or the diffraction pattern of the diffraction grating is provided on the stage so as to be orthogonal to the moving direction. Sample stage. 6. The two stages on which the moving direction moves in two directions orthogonal to each other are provided on the stage such that the uneven standard member or the uneven pattern of the diffraction grating is orthogonal to the respective moving directions. 5. The sample stage according to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34498396A JP2705696B2 (en) | 1996-12-25 | 1996-12-25 | Sample stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34498396A JP2705696B2 (en) | 1996-12-25 | 1996-12-25 | Sample stage |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62187533A Division JP2650915B2 (en) | 1987-07-29 | 1987-07-29 | Charged particle beam length measuring device and length measuring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09229629A JPH09229629A (en) | 1997-09-05 |
| JP2705696B2 true JP2705696B2 (en) | 1998-01-28 |
Family
ID=18373487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34498396A Expired - Lifetime JP2705696B2 (en) | 1996-12-25 | 1996-12-25 | Sample stage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2705696B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100925600B1 (en) * | 2002-09-09 | 2009-11-06 | 주식회사 포스코 | Apparatus for measuring moisture content in source and automatically correcting the same |
| JP2007248082A (en) * | 2006-03-14 | 2007-09-27 | Hitachi High-Technologies Corp | Standard sample to be used for charged particle beam device, charged particle beam device, and method for manufacturing standard sample to be used for charged particle beam device |
| JP5560246B2 (en) * | 2011-08-29 | 2014-07-23 | 株式会社日立ハイテクノロジーズ | Standard sample used for charged particle beam apparatus and method for producing standard sample used for charged particle beam apparatus |
| CN104269191B (en) * | 2014-09-19 | 2016-03-23 | 南京工程学院 | The parallel institution that Hydrauservo System and piezoelectric ceramic actuator drive jointly |
| CN104589807B (en) * | 2014-12-01 | 2016-09-28 | 中核(天津)科技发展有限公司 | The gauge length caliberating device of 7A60 aluminium alloy room temperature tensile sample and scaling method |
| CN105700360B (en) * | 2015-09-18 | 2018-10-30 | 南京工程学院 | A kind of control method of the parallel institution TT&C system of macro microring array driving |
-
1996
- 1996-12-25 JP JP34498396A patent/JP2705696B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09229629A (en) | 1997-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |