JP2641521B2 - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP2641521B2 JP2641521B2 JP63210667A JP21066788A JP2641521B2 JP 2641521 B2 JP2641521 B2 JP 2641521B2 JP 63210667 A JP63210667 A JP 63210667A JP 21066788 A JP21066788 A JP 21066788A JP 2641521 B2 JP2641521 B2 JP 2641521B2
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- wiring board
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は、アルミナ質とガラス質から成る新規な配線
基板に関するものである。さらに詳しくいえば、本発明
は、1000℃以下という低温での焼結で得られ、結晶化を
容易にコントロールでき、耐マイグレーシヨン性に優
れ、低誘電率であり、しかも高強度を有する絶縁性基板
に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel wiring board made of alumina and glass. More specifically, the present invention is obtained by sintering at a low temperature of 1000 ° C. or less, can easily control crystallization, has excellent migration resistance, has a low dielectric constant, and has a high strength insulating property. It relates to a substrate.
従来の技術 近年、電子応用機器の急速な発展とともに、半導体チ
ップ用の絶縁性配線基板の需要が急激に増大してきてい
る。このような基板の材料としては、これまでアルミ
ナ、ホルステライト、ステアタイト、コーディエライ
ト、ムライトなどが用いられているが、これらに共通し
た欠点は焼結温度が1200℃以上と高いことである。この
ほか、アルカリ金属及び酸化鉛（PbO）を含有させるこ
とにより焼結温度を低下させた磁器組成物も知られてい
るが（特公昭59−22399号公報、特公昭60−8229号公
報）、PbOを主要に用いる材料系は、焼成温度を低くす
ることができるが、焼成時にPbOが蒸発しやすいため、
製造上の問題が多い。また、導体や抵抗材料と同時焼成
が困難という問題点を有する。他方、Li、Na、Ｋ等のア
ルカリ金属を用いる材料系は耐湿性等の信頼性に問題が
ある。2. Description of the Related Art In recent years, demand for insulating wiring substrates for semiconductor chips has been rapidly increasing with the rapid development of electronic application devices. As a material for such a substrate, alumina, forsterite, steatite, cordierite, mullite, etc. have been used so far, but a common drawback is that the sintering temperature is as high as 1200 ° C. or higher. . In addition, a porcelain composition in which the sintering temperature is reduced by containing an alkali metal and lead oxide (PbO) is also known (JP-B-59-22399, JP-B-60-8229). Material systems that mainly use PbO can lower the firing temperature, but because PbO is likely to evaporate during firing,
There are many manufacturing problems. In addition, there is a problem that it is difficult to co-fire with the conductor and the resistance material. On the other hand, a material system using an alkali metal such as Li, Na, and K has a problem in reliability such as moisture resistance.
さらにCa系やMg系のガラス材料を含有させることによ
り、焼成温度を低下させるとともに、誘電率を低下させ
たり、抗折強度を向上させた材料も知られている（特開
昭60−257195号公報、特開昭60−260465号公報、特開昭
62−113758号公報）。Further, there is known a material in which a calcination temperature is lowered by adding a Ca-based or Mg-based glass material, a dielectric constant is lowered, and a transverse rupture strength is improved (Japanese Patent Laid-Open No. 60-257195). JP, JP-A-60-260465, JP-A-60-260465
62-113758).
他方、Al2O3及びZrSiO4から成る無機酸化物成分と、S
iO2、Al2O3、B2O3、ZnO、BaO、MgO及びCaOから成るガラ
ス質成分とを混合して使用して、焼結温度を低くした配
線基板材料も提案されているが（特開昭61−278195号公
報）、焼結後における無機酸化物の焼結生成物とガラス
質との熱膨張率が異なる上に、ガラス質自体の強度が不
十分なため、得られる配線基板は強度が低いものとなる
のを免れない。On the other hand, an inorganic oxide component consisting of Al 2 O 3 and ZrSiO 4 and S
Wiring board materials with a low sintering temperature using a mixture of glassy components of iO 2 , Al 2 O 3 , B 2 O 3 , ZnO, BaO, MgO and CaO have also been proposed ( JP-A-61-278195), the sintered product of the inorganic oxide after sintering and the vitreous material have different coefficients of thermal expansion, and the strength of the vitreous material itself is insufficient. Is inevitably low in strength.
また、ガラス−セラミックス系の基板材料において
は、強度向上の点でガラス成分の結晶化度の制御が重要
であるが、MgO系等の他のガラス材料ではこの制御が困
難であるという問題がある。また、この結晶化度の制御
（残存ガラス成分量の制御）は基板に設ける導体、抵抗
部の耐マイグレーション性に影響し、基板寿命の低下と
いう重大な問題につながる。Further, in the case of glass-ceramics-based substrate materials, it is important to control the degree of crystallinity of glass components in terms of improving strength, but there is a problem that this control is difficult in other glass materials such as MgO-based materials. . Further, the control of the degree of crystallinity (control of the amount of residual glass component) affects the migration resistance of the conductor and the resistance portion provided on the substrate, and leads to a serious problem of shortening the life of the substrate.
発明が解決しようとする問題点 本発明は、従来の絶縁性配線基板、特に無機酸化物成
分とガラス質成分から成る基板がもつ欠点を克服し、低
温での焼結で製造することができる上に、結晶化度を容
易にコントロールでき、耐マイグレーシヨン性に優れ、
低誘電率であり、しかも高強度を有する新規な絶縁性配
線基板を提供することを目的としてなされたものであ
る。Problems to be Solved by the Invention The present invention overcomes the drawbacks of the conventional insulating wiring substrate, particularly a substrate composed of an inorganic oxide component and a vitreous component, and can be manufactured by sintering at a low temperature. In addition, the crystallinity can be easily controlled and the migration resistance is excellent.
An object of the present invention is to provide a novel insulating wiring board having a low dielectric constant and a high strength.
問題点を解決するための手段 発明者らは、絶縁性配線基板用の材料について種々研
究を重ねた結果、アルミナ成分と、SrOを主体としたア
ルカリ土類金属の酸化物を含むガラス成分とから成る絶
縁性磁器は、1000℃以下という低温で焼結可能であり、
高強度を示すということを見出し、この知見に基づいて
本発明をなすに至った。Means for Solving the Problems The inventors of the present invention have conducted various studies on materials for an insulating wiring board, and have found that an alumina component and a glass component containing an oxide of an alkaline earth metal mainly composed of SrO are used. The insulating porcelain can be sintered at a low temperature of 1000 ° C or less,
The present inventors have found that they exhibit high strength, and have accomplished the present invention based on this finding.
すなわち、本発明は、アルミナ成分30〜50重量％及び
ガラス成分70〜50％とを含み、かつ該ガラス成分がSiO2
46〜60重量％、B2O3 0.5〜５重量％、Al2O3 6〜17.5重
量％及びアルカリ土類金属酸化物25〜45重量％の組成を
有し、該アルカリ土類金属酸化物中の少なくとも60重量
％がSrOである絶縁性磁器から成る配線基板を提供する
ものである。That is, the present invention comprises 30 to 50% by weight of an alumina component and 70 to 50% of a glass component, and the glass component is SiO 2
46-60 wt%, B 2 O 3 0.5 to 5 wt%, Al 2 O 3 has a composition of from 6 to 17.5% by weight and an alkaline earth metal oxide 25-45 wt%, the alkaline earth metal oxides An object of the present invention is to provide a wiring board made of insulating porcelain of which at least 60% by weight is SrO.
本発明の配線基板の素材である絶縁性磁器は、アルミ
ナ成分30〜50重量％、好ましくは35〜45重量％及びガラ
ス成分70〜50重量％、好ましくは65〜55重量％から成る
ことが必要である。アルミナ成分が30重量％未満すなわ
ちガラス成分が70重量％よりも多くなると焼結可能な温
度範囲が著しく狭くなり、実用性が低下するし、またガ
ラス成分が50重量％未満すなわちアルミナ成分が50重量
％よりも多くなると、1000℃以下でち密な焼結体が得ら
れなくなる。The insulating porcelain, which is the material of the wiring board of the present invention, needs to be composed of 30 to 50% by weight, preferably 35 to 45% by weight, of an alumina component and 70 to 50% by weight, preferably 65 to 55% by weight of a glass component. It is. When the alumina component is less than 30% by weight, that is, when the glass component is more than 70% by weight, the sinterable temperature range is remarkably narrowed, and the practicality is lowered. In addition, the glass component is less than 50% by weight, that is, the alumina component is 50% by weight. %, A dense sintered body cannot be obtained at 1000 ° C. or lower.
次に、本発明における前記のガラス成分は、SiO2 46
〜60重量％、好ましくは47〜55重量％、B2O3 0.5〜５重
量％、好ましくは１〜３重量％、Al2O3 6〜17.5重量
％、好ましくは７〜16.5重量％及びアルカリ土類金属酸
化物25〜45重量％好ましくは30〜40重量％の組成を有す
ることが必要である。このSiO2が46重量％未満ではガラ
ス化が困難になるし、60重量％を超えると融点が高くな
りすぎて低温焼結ができなくなる。また、B2O3は５重量
％よりも多くすると、焼結後における耐湿性の低下を招
くし、また0.5重量％よりも少なすぎるとガラス化温度
が若干高くなるとともに焼結温度が高くなりすぎるので
好ましくない。さらにAl2O3が６重量％未満では、ガラ
ス成分の強度が低下するし、17.5重量％を超えるとガラ
ス化が困難になる。Next, the glass component in the present invention is SiO 2 46
60 wt%, preferably 47-55 wt%, B 2 O 3 0.5 to 5 wt%, preferably 1 to 3 wt%, Al 2 O 3 from 6 to 17.5 wt%, preferably from 7 to 16.5% by weight and an alkali It is necessary to have a composition of 25 to 45% by weight, preferably 30 to 40% by weight, of the earth metal oxide. If the content of SiO 2 is less than 46% by weight, vitrification becomes difficult, and if the content exceeds 60% by weight, the melting point becomes too high to perform low-temperature sintering. On the other hand, if the content of B 2 O 3 is more than 5% by weight, the moisture resistance after sintering is lowered. If the content is less than 0.5% by weight, the vitrification temperature is slightly increased and the sintering temperature is increased. It is not preferable because it is too much. Further, when the content of Al 2 O 3 is less than 6% by weight, the strength of the glass component decreases, and when it exceeds 17.5% by weight, vitrification becomes difficult.
このガラス成分中のアルカリ土類金属酸化物として
は、MgO,CaO,BaO及びSrOがあるが、その合計量の少なく
とも60重量％、好ましくは80重量％以上がSrOであるこ
とが必要である。この量が60重量％未満では、熱膨張係
数の整合性がとれなくなり、アルミナ成分の熱膨張係数
との差が大きくなるため高強度の磁器が得られない。Alkaline earth metal oxides in this glass component include MgO, CaO, BaO and SrO, and it is necessary that at least 60% by weight, preferably 80% by weight or more of the total amount be SrO. If the amount is less than 60% by weight, the thermal expansion coefficient cannot be matched, and the difference from the thermal expansion coefficient of the alumina component becomes large, so that high strength porcelain cannot be obtained.
そして、他のCaO、MgO、BaOの若干を複合添加するこ
とにより、溶解ガラスの粘性を低下させ、焼結温度幅を
拡大することができ、製造が容易になるので、これらを
混合使用することが好ましい。By adding a small amount of other CaO, MgO, and BaO in combination, the viscosity of the molten glass can be reduced, the sintering temperature range can be expanded, and the production becomes easier. Is preferred.
添加効果の点では、前記アルカリ土類金属酸化物中の
CaOとMgOとBaOは合計で１重量％以上にするのが好まし
く、さらにCaOとMgOはそれぞれ0.2重量％以上、特に0.5
重量％以上にするのが好ましい。前記アルカリ土類金属
酸化物中のCaOは、10重量％未満、MgOは４重量％以下に
するのが好ましい。In terms of the effect of addition, in the alkaline earth metal oxide
The total content of CaO, MgO, and BaO is preferably at least 1% by weight, and CaO and MgO are each at least 0.2% by weight, especially 0.5% by weight.
It is preferable that the content be not less than% by weight. Preferably, the content of CaO in the alkaline earth metal oxide is less than 10% by weight and the content of MgO is 4% by weight or less.
これらの酸化物の量がそれよりも多くなると熱膨張係
数が小さくなりすぎて、前記したように、高強度の磁器
が得られず、また、ガラスの結晶化度の制御が困難にな
る。製造の容易性と磁器の強度のバランスの点からは、
アルカリ土類金属酸化物中CaOとMgOの合計で10重量％未
満、CaOは５重量％がさらに好ましい。If the amount of these oxides is larger than that, the coefficient of thermal expansion becomes too small, and as described above, a high-strength porcelain cannot be obtained, and it is difficult to control the crystallinity of the glass. In terms of the balance between ease of manufacture and porcelain strength,
The total content of CaO and MgO in the alkaline earth metal oxide is less than 10% by weight, and the content of CaO is more preferably 5% by weight.
また、この中のBaOは５重量％以下にするのが好まし
く、５重量％よりも多くすると誘電率が高くなりすぎて
好ましくない。Further, the content of BaO in this is preferably not more than 5% by weight, and if it is more than 5% by weight, the dielectric constant becomes too high, which is not preferable.
本発明の配線基板を製造するには、例えば前記のアル
ミナ成分及びガラス成分の原料をそれぞれ平均粒径10μ
ｍ以下、好ましくは１〜４μｍの粉末として混合し、こ
れに水若しくは溶剤及び必要に応じ適当なバインダーを
加えてペーストを調製する。次にこのペーストをドクタ
ーブレード、押出機などを用いて厚さ0.1〜1.0mm程度の
シート状に成形し、800〜1000℃で焼結する。また、各
成分の粉末状混合物そのまま乾式プレスしてシート状に
成形し焼結してもよい。この際、導体、抵抗体、オーバ
ーコート、サーミスターなどを施し、同時焼成すること
もできる。In order to manufacture the wiring board of the present invention, for example, the raw materials of the alumina component and the glass component each have an average particle size of 10 μm.
m, preferably 1 to 4 μm, and a paste is prepared by adding water or a solvent and an appropriate binder as needed. Next, this paste is formed into a sheet having a thickness of about 0.1 to 1.0 mm using a doctor blade, an extruder, or the like, and sintered at 800 to 1000 ° C. Alternatively, the powdery mixture of each component may be dry pressed as it is, formed into a sheet, and sintered. At this time, a conductor, a resistor, an overcoat, a thermistor, or the like may be applied and fired simultaneously.
このような焼成操作中において、一部アルミナを核形
成材として結晶化し、長石が形成されると考えられる。
この際の結晶化は容易にコントロールできる。他のガラ
ス、特にMgO系のものでは結晶化のコントロールが困難
である。前記の形成された長石と残ガラスとアルミナの
バランスが良好であると、これらの間の接合が極めて良
好になり、強度が向上するとともに配線された基板とし
て用いた時に導体のマイグレーシヨン性が抑制されるも
のと考えられる。It is considered that during such a sintering operation, alumina is partially crystallized as a nucleating material to form feldspar.
The crystallization at this time can be easily controlled. It is difficult to control crystallization with other glasses, particularly MgO-based glasses. When the balance between the formed feldspar, the residual glass and the alumina is good, the bonding between them is extremely good, the strength is improved, and the migration property of the conductor is suppressed when used as a wired substrate. It is thought that it is done.
また、結晶化が進みすぎるとち密化する前に結晶化し
てしまってち密にならないため強度が不十分となるし、
またガラス分が多く残りすぎると強度が弱くなるものと
考えられる。Also, if the crystallization proceeds too much, it will be crystallized before it becomes dense and it will not be dense, so the strength will be insufficient,
Also, it is considered that the strength is weakened when the glass content is too large.
また、添付図面はガラス成分とアルミナ成分とを含む
絶縁性磁器から成る配線基板の誘電率を、ガラス成分中
に含まれるSrOとBaOとCaOの三成分に基づく三元図で示
したものである。これからみて、SrOの割合が多くなる
ほど誘電率が低下することが明らかであり、本発明の配
線基板が誘電率においても優れていることが分る。Further, the accompanying drawings show the dielectric constant of a wiring board composed of an insulating porcelain containing a glass component and an alumina component in a ternary diagram based on three components of SrO, BaO, and CaO contained in the glass component. . From this, it is clear that the dielectric constant decreases as the ratio of SrO increases, and it can be seen that the wiring board of the present invention has an excellent dielectric constant.
発明の効果 本発明に従えば、1000℃以下という低い焼結温度を用
いて、結晶化を容易にコントロールでき、耐マイグレー
シヨン性に優れ、CaO系やBaO系のものに比し低誘電率で
あり、しかも2400kgf/cm2というアルミナ基板に匹敵す
る抗折強度等の高強度を有する絶縁性配線基板が得られ
るので、導体、碍子などの絶縁材、チップ抵抗体などの
抵抗体、オーバーコート、サーミスターなの厚膜ペース
トとの同時焼成による各種電子装置の製造に好適に利用
することができ、これらの工業的な生産に大きなメリッ
トをもたらすことができる。Effect of the Invention According to the present invention, crystallization can be easily controlled using a low sintering temperature of 1000 ° C. or less, excellent in migration resistance, and has a lower dielectric constant than those of CaO and BaO. There, and since the insulating wiring board having a high strength such as bending strength is obtained comparable to the alumina substrate of 2400kgf / cm 2, a conductor, an insulating material such as insulator, resistor such as a chip resistor, overcoat, It can be suitably used for the manufacture of various electronic devices by simultaneous firing with a thick film paste such as a thermistor, and can bring great merits to these industrial productions.
実施例 次に実施例により本発明をさらに詳細に説明する。EXAMPLES Next, the present invention will be described in more detail with reference to examples.
参考例１ 酸化物換算で、第１表に示すガラス組成になるよう
に、SiO2、B2O3、Al2O3及びアルカリ土類金属炭酸塩を
秤量し、これらをボールミルで混合し、乾燥する。次い
でこの混合物を1400℃以上の温度に加熱して融解後冷却
してガラス試料を調製し、その熱膨張係数を測定した。
その結果を第１表に示す。Reference Example 1 In terms of oxide, SiO 2 , B 2 O 3 , Al 2 O 3 and alkaline earth metal carbonate were weighed so as to have a glass composition shown in Table 1, and these were mixed by a ball mill. dry. Next, the mixture was heated to a temperature of 1400 ° C. or higher, melted, and then cooled to prepare a glass sample, and the coefficient of thermal expansion was measured.
Table 1 shows the results.
本発明のガラス成分としては、熱膨張係数が6.0×10
-6〜7.2×10-6の範囲が適当であるので、No.7は不適当
である。 As the glass component of the present invention, the coefficient of thermal expansion is 6.0 × 10
No. 7 is unsuitable because the range of -6 to 7.2 x 10-6 is appropriate.
参考例２ SiO252.5重量％及びB2O31.5重量％のほか、第２表に
示す成分になるような割合で原料を混合し、参考例１と
同様にしてガラス成分を調製した。このガラス成分の熱
膨張係数を第２表に示す。Reference Example 2 In addition to 52.5% by weight of SiO 2 and 1.5% by weight of B 2 O 3 , raw materials were mixed in such a ratio as to give the components shown in Table 2, and a glass component was prepared in the same manner as in Reference Example 1. Table 2 shows the thermal expansion coefficient of this glass component.
No.11はアルカリ土類金属酸化物の合計量に対するSrO
の割合が60重量％未満であるため熱膨張係数が小さくな
りすぎ、またNo.12はAl2O3の含有量が6.0重量％未満で
あるためガラス成分の強度が低く、いずれも不適当であ
る。 No.11 is SrO to total amount of alkaline earth metal oxide
Is less than 60% by weight, the coefficient of thermal expansion is too small, and No. 12 has a low glass component strength because the content of Al 2 O 3 is less than 6.0% by weight. is there.
参考例３ 参考例１と同様にして、第３表に示す組成のガラス成
分を調製した。このガラス成分の熱膨張係数を第３表に
示す。Reference Example 3 In the same manner as in Reference Example 1, a glass component having the composition shown in Table 3 was prepared. Table 3 shows the thermal expansion coefficient of this glass component.
No.16はAl2O3の含有量が17.5重量％を超えているた
め、ガラス化することができなかった。 No. 16 could not be vitrified because the content of Al 2 O 3 exceeded 17.5% by weight.
No.17はSiO2の含有量が46重量％未満のため、ガラス
化することができなかった。No. 17 could not be vitrified because the content of SiO 2 was less than 46% by weight.
No.18はB2O3の含有量が５重量％を超えているため、
吸湿性が高く、かつ強度が不足し絶縁性配線基板として
は不適当であった。No. 18 has a B 2 O 3 content of more than 5% by weight,
It has high hygroscopicity and insufficient strength, and is unsuitable as an insulating wiring board.
実施例１〜７、比較例１〜６ 各参考例で得たガラス試料を粗粉砕後、ボールミルで
24時間微粉砕し、平均粒径２μｍのガラス粉末を調製し
た。次にこのガラス粉末とアルミナ粉末（平均粒径1.5
μｍ）とを、第４表に示す割合で混合し、水を加えてペ
ースト化し、ドクターブレードで厚さ0.5mmに展延し、
シート状に成形後、第４表に示す温度で0.5時間焼成
し、配線基板を作成した。Examples 1 to 7, Comparative Examples 1 to 6 After coarsely pulverizing the glass samples obtained in each of the reference examples, the glass samples were subjected to ball milling.
The mixture was pulverized for 24 hours to prepare a glass powder having an average particle size of 2 μm. Next, this glass powder and alumina powder (average particle size 1.5
μm) was mixed in the proportions shown in Table 4, water was added to form a paste, and the mixture was spread to a thickness of 0.5 mm with a doctor blade.
After being formed into a sheet, it was baked at the temperature shown in Table 4 for 0.5 hour to prepare a wiring board.
得られた配線基板の相対焼成密度及び抗折強度を第４
表に示す。The relative firing density and bending strength of the obtained wiring board
It is shown in the table.
比較例１はアルミナ成分の含有量が少ないため強度が
低く、比較例２は逆にアルミナ成分の含有量が多いため
焼成温度が高い。 Comparative Example 1 has a low strength because the content of the alumina component is small, and conversely, Comparative Example 2 has a high firing temperature because the content of the alumina component is large.
また、比較例３はアルカリ土類金属酸化物含有量の低
いガラス成分を用いているため強度が低くなっている。In Comparative Example 3, the strength was low because a glass component having a low alkaline earth metal oxide content was used.
比較例４は、Al2O3含有量の多いガラス成分を用いて
いるためガラス化が不十分で焼成温度を低下させること
ができなかった。In Comparative Example 4, since a glass component having a large Al 2 O 3 content was used, vitrification was insufficient and the firing temperature could not be lowered.
比較例５は、B2O3の含有量が多いガラス成分を用いて
いるため強度が不足する上に、熱水に溶解するという欠
点を示す。Comparative Example 5 has a drawback that the glass component having a large content of B 2 O 3 is not only insufficient in strength but also dissolved in hot water.
比較例６は、SrOの占有率の低いガラス成分を用いて
いるため、強度が低い。Comparative Example 6 has a low strength because a glass component having a low occupancy ratio of SrO is used.
また、比較例２及び４における焼成温度を、他の例
の、あるいはそれに近い、950℃に低下させるとそれぞ
れ相対焼成密度が81％及び85％、抗折強度が1500kgf/cm
2及び1700kgf/cm2といずれも大幅に低下する。Further, when the firing temperature in Comparative Examples 2 and 4 was lowered to 950 ° C., which was similar to or similar to that of the other examples, the relative firing densities were 81% and 85%, respectively, and the transverse rupture strength was 1500 kgf / cm.
Both 2 and 1700 kgf / cm 2 are greatly reduced.
実施例８、比較例７ SiO2 53wt％、Al2O3 11wt％、B2O3 4wt％、MgO 2wt
％、CaO 2wt％、SrO 27wt％及びBaO 1wt％から成るガラ
ス成分60重量％とアルミナ成分40重量％とを実施例１〜
７と同様に処理して成形後、得られた成形体を、Ag95重
量部とPd5重量部とガラス20重量部から成る少なくとも
２個の導体とともに成形体−導体−成形体−導体−成形
体…の順序に積層して900℃で15分焼成し、各導体の間
隔が30μｍの配線基板を作成した。このものはガラス残
存量が原料ガラス成分に対し20％であり、300℃で300V
の電圧を印加して加速信頼性試験を行ったところ、平均
寿命は1400時間と極めて優れた耐マイグレーシヨン性を
示した。Example 8, Comparative Example 7 SiO 2 53 wt%, Al 2 O 3 11 wt%, B 2 O 3 4 wt%, MgO 2 wt
%, CaO 2 wt%, SrO 27 wt% and BaO 1 wt%, 60% by weight of a glass component and 40% by weight of an alumina component.
After processing and molding in the same manner as in 7, the obtained molded body was molded together with at least two conductors consisting of 95 parts by weight of Ag, 5 parts by weight of Pd, and 20 parts by weight of glass. And baked at 900 ° C. for 15 minutes to produce a wiring board in which the distance between the conductors is 30 μm. This glass has a residual glass content of 20% of the raw glass component, and 300V at 300 ° C.
When an accelerated reliability test was performed by applying a voltage of, the average life was 1400 hours, showing extremely excellent migration resistance.
次に比較のため、ガラス成分としてSiO2 53wt％、Al2
O3 11wt％、B2O3 4wt％、MgO 2wt％、CaO 27.5wt％、Sr
O 0.5wt％及びBaO 2wt％から成るものを用いた以外は、
実施例８と同様にして作成したガラス残存量50％の配線
基板に実施例８と同様の試験を行った結果、平均寿命は
53時間にすぎなかった。Next, for comparison, 53 wt% of SiO 2 and Al 2 were used as glass components.
O 3 11 wt%, B 2 O 3 4 wt%, MgO 2 wt%, CaO 27.5 wt%, Sr
Except for using 0.5 wt% O and 2 wt% BaO,
As a result of performing the same test as in Example 8 on a wiring board having a glass remaining amount of 50% prepared in the same manner as in Example 8, the average life was
It was only 53 hours.
添付図面はガラス成分とアルミナ成分とを含む絶縁性磁
器から成る配線基板の誘電率を、ガラス成分中に含まれ
るSrOとBaOとCaOの三成分に基づく三元図で示したもの
である。The attached drawing shows the dielectric constant of a wiring board composed of insulating porcelain containing a glass component and an alumina component in a ternary diagram based on three components of SrO, BaO and CaO contained in the glass component.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 二宮 秀明 東京都中央区日本橋１丁目13番１号 テ ィーディーケイ株式会社内 (56)参考文献 特開 昭62−182157（ＪＰ，Ａ) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hideaki Ninomiya 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (56) References JP-A-62-182157 (JP, A)
Claims (1)
70〜50重量％とを含み、かつ該ガラス成分がSiO2 46〜6
0重量％、B2O3 0.5〜５重量％、Al2O3 6〜17.5重量％及
びアルカリ土類金属酸化物25〜45重量％の組成を有し、
該アルカリ土類金属酸化物中の少なくとも60重量％がSr
Oである絶縁性磁器から成る配線基板。1. An alumina component of 30 to 50% by weight and a glass component
70-50% by weight, and the glass component is SiO 2 46-6
0 wt%, B 2 O 3 0.5 to 5 wt%, Al 2 O 3 has a composition of from 6 to 17.5% by weight and an alkaline earth metal oxide 25-45 wt%,
At least 60% by weight of the alkaline earth metal oxide is Sr
A wiring board made of insulating porcelain that is O.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210667A JP2641521B2 (en) | 1987-08-31 | 1988-08-26 | Wiring board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21524287 | 1987-08-31 | ||
| JP62-215242 | 1987-08-31 | ||
| JP63210667A JP2641521B2 (en) | 1987-08-31 | 1988-08-26 | Wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01132194A JPH01132194A (en) | 1989-05-24 |
| JP2641521B2 true JP2641521B2 (en) | 1997-08-13 |
Family
ID=26518197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63210667A Expired - Lifetime JP2641521B2 (en) | 1987-08-31 | 1988-08-26 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2641521B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8481440B2 (en) | 2009-03-03 | 2013-07-09 | Tdk Corporation | Dielectric ceramic composition, dielectric body, ceramic substrate, electronic component, and method for producing dielectric body |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2761320B2 (en) * | 1991-03-11 | 1998-06-04 | ティーディーケイ株式会社 | Inorganic composition for overcoat |
| JP4852778B2 (en) * | 1999-06-22 | 2012-01-11 | 株式会社村田製作所 | Composition for ceramic substrate and ceramic circuit component |
| JP5929052B2 (en) * | 2011-09-07 | 2016-06-01 | Tdk株式会社 | Multilayer coil parts |
| KR101550591B1 (en) | 2011-09-07 | 2015-09-07 | 티디케이가부시기가이샤 | Laminated coil component |
-
1988
- 1988-08-26 JP JP63210667A patent/JP2641521B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8481440B2 (en) | 2009-03-03 | 2013-07-09 | Tdk Corporation | Dielectric ceramic composition, dielectric body, ceramic substrate, electronic component, and method for producing dielectric body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01132194A (en) | 1989-05-24 |
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