JP2631554B2 - Laser wavelength controller - Google Patents

Laser wavelength controller

Info

Publication number
JP2631554B2
JP2631554B2 JP1129392A JP12939289A JP2631554B2 JP 2631554 B2 JP2631554 B2 JP 2631554B2 JP 1129392 A JP1129392 A JP 1129392A JP 12939289 A JP12939289 A JP 12939289A JP 2631554 B2 JP2631554 B2 JP 2631554B2
Authority
JP
Japan
Prior art keywords
wavelength
grating
laser
total reflection
reflection mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1129392A
Other languages
Japanese (ja)
Other versions
JPH02307285A (en
Inventor
理 若林
諭樹夫 小林
雅彦 小若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
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Filing date
Publication date
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Priority to JP1129392A priority Critical patent/JP2631554B2/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はステッパーの光源として使用されている狭帯
域発振エキシマレーザの波長制御装置に関するものであ
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wavelength control device for a narrow-band oscillation excimer laser used as a light source for a stepper.

〔従来の技術〕[Conventional technology]

半導体装置製造用の縮小投影露光装置（以下、ステッ
パーという）の光源としてエキシマレーザの利用が注目
されている。これはエキシマレーザの波長が短い（KrF
の波長は約248.4nm）ことから光露光の限界を0.5μｍ以
下に延ばせる可能性があること、同じ解像度なら従来用
いていた水銀ランプのｇ線やｉ線に比較して焦点深度が
深いこと、レンズの開口数（NA）が小さくて済み、露光
領域を大きくできること、大きなパワーが得られること
等多くの優れ利点が期待できるからである。Attention has been paid to the use of excimer lasers as light sources for reduction projection exposure apparatuses (hereinafter, referred to as steppers) for manufacturing semiconductor devices. This is due to the short wavelength of the excimer laser (KrF
Wavelength is about 248.4 nm), so that the limit of light exposure can be extended to 0.5 μm or less, and the depth of focus is deeper than the conventional mercury lamp g-line and i-line at the same resolution. This is because a number of excellent advantages such as a large numerical aperture (NA) of the lens, a large exposure area, and a large power can be expected.

ところで、ステッパーの光源として利用されるエキシ
マレーザとしては線幅3pm以下の狭帯化が要求され、し
かも大きな出力パワーが要求される。By the way, as an excimer laser used as a light source of a stepper, a narrow band having a line width of 3 pm or less is required, and a large output power is required.

エキシマレーザの狭帯域化の技術としては従来インジ
ェンクションロック方式と呼ばれるものがある。このイ
ンジェンクションロック方式は、オキシレータ段のキャ
ピティ内に波長選択素子（エタロン，回折格子，プリズ
ム等）を配置し、ピンホールによって空間モードを制限
して単一モード発振させ、このレーザ光を増幅段によっ
て注入同期する。この方式によると比較的大きな出力パ
ワーが得られるが、ミスショットがあったり、ロッキン
グ効率を100％とすることが困難であったり、スペクト
ル純度が悪くなるという欠点がある。また、この方式の
場合その出力光はコヒーレンス性が高く、これを縮小露
光装置の光源に用いた場合は、スペックル・パターンが
発生する。一般にスペックル・パターンの発生はレーザ
光に含まれる空間横モードの数に依存すると考えられて
いる。すなわち、レーザ光に含まれる空間横モードの数
が少ないというスペックル・パターンが発生し易くな
り、逆に空間モードの数が多くなるとスペックル・パタ
ーンは発生しにくくなることが知られている。上述した
インジェクションロック方式は本質的には空間横モード
の数を著しく減らすことによって狭帯域化を行う技術で
あり、スペックル・パターンの発生が大きな問題となる
ため縮小投影露光装置には採用できない。As a technique for narrowing the band of an excimer laser, there is a technique conventionally called an injection lock method. In this injection lock method, a wavelength selection element (etalon, diffraction grating, prism, etc.) is arranged in the oxylator stage capacity, the spatial mode is restricted by a pinhole, and single mode oscillation is performed. Inject synchronization. According to this method, a relatively large output power can be obtained, but there are disadvantages in that there are misshots, it is difficult to set the locking efficiency to 100%, and the spectral purity deteriorates. Also, in this method, the output light has high coherence. When this light is used as a light source of a reduction exposure apparatus, a speckle pattern is generated. It is generally considered that the generation of a speckle pattern depends on the number of spatial transverse modes included in a laser beam. That is, it is known that a speckle pattern in which the number of spatial transverse modes included in a laser beam is small is easily generated, and that a speckle pattern is hardly generated when the number of spatial modes is large. The above-described injection lock method is essentially a technique for narrowing the bandwidth by remarkably reducing the number of spatial transverse modes. Since the occurrence of a speckle pattern becomes a serious problem, it cannot be used in a reduced projection exposure apparatus.

エキシマレーザの狭帯域化の技術として他に有望なも
のは波長選択素子であるエアーギャップエタロンを用い
たものがある。このエアーギャップエタロンを用いた従
来技術としてはAT＆Ｔベル研究所によるエキシマレーザ
のフロントミラーとレーザチャンバとの間にエアーギャ
ップエタロンを配置し、エキシマレーザの狭帯域化を図
ろうとする技術が提案されている。しかし、この方式は
スペクトル線幅をあまり狭くせず、かつ、エアーギャッ
プエタロン挿入によるパワーロスが大きいという問題が
あり、さらに空間横モードの数もあまり多くすることが
できないという欠点がある。またエアーギャップエタロ
ンは耐久性に問題がある。Another promising technique for narrowing the band of an excimer laser is an air gap etalon that is a wavelength selection element. As a conventional technology using this air gap etalon, a technology has been proposed by AT & T Bell Laboratories in which an air gap etalon is arranged between a front mirror of an excimer laser and a laser chamber to narrow the band of the excimer laser. I have. However, this method has the problems that the spectral line width is not made too narrow, the power loss due to the insertion of the air gap etalon is large, and the number of spatial transverse modes cannot be made too large. The air gap etalon has a problem in durability.

そこで、比較的耐久性に優れたグレーティングを波長
選択素子として採用し、このグレーティングの角度を変
化させることにより、レーザ光の波長を狭帯化するよう
に構成したエキシマレーザが提案されている。Therefore, an excimer laser has been proposed in which a grating having relatively excellent durability is used as a wavelength selection element, and the wavelength of the laser beam is narrowed by changing the angle of the grating.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかしながら、ステッパーに使用されるような狭帯域
発振エキシマレーザはレーザ光の波長を単一段で3pm以
下に狭帯域化する必要があり、また高速かつ高精度な波
長安定化が必要となる。このため、使用されるグレーテ
ィングとして大きな形状のものが必要となり、必然的に
その重量も非常に重いものとなる。このため、グレーテ
ィングを高速かつ高精度で変化させ、波長を安定して高
精度に制御することが非常に困難になっていた。However, a narrow-band oscillation excimer laser used in a stepper needs to narrow the wavelength of a laser beam to 3 pm or less in a single stage, and requires high-speed and high-accuracy wavelength stabilization. For this reason, a large-sized grating is required as the grating to be used, and the weight of the grating is inevitably very heavy. For this reason, it has been very difficult to change the grating at high speed and with high accuracy and to control the wavelength stably with high accuracy.

本発明は、レーザ光の波長を高速かつ高精度に安定的
に制御することができるレーザ光の波長制御装置を提供
することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a laser light wavelength control device capable of stably controlling the wavelength of laser light with high speed and high accuracy.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、レーザチャンバーとグレーティングとの間
にプリズムやミラーなどの光学素子を配置し、この光学
素子の角度を変化させることにより波長を制御するもの
である。In the present invention, an optical element such as a prism or a mirror is disposed between a laser chamber and a grating, and the wavelength is controlled by changing the angle of the optical element.

〔作用〕[Action]

レーザチャンバとグレーティングとの間にある光学素
子はグレーティングよりもかなり小さく、軽いため、非
常に速くまた正確に角度を変化させることができる。そ
のため波長の制御性および安定性がよくなる。The optical element between the laser chamber and the grating is much smaller and lighter than the grating, so that the angle can be changed very quickly and accurately. Therefore, wavelength controllability and stability are improved.

〔実施例〕〔Example〕

以下、実施例に基づいて本発明を説明する。 Hereinafter, the present invention will be described based on examples.

第１図は第１実施例を示す構成図であり、両端にウイ
ンドウ2,3が設けられたレーザチャンバ１とグレーティ
ング５との間に、全反射ミラー６を配置し、この全反射
ミラー６のレーザ光７に対する角度を変化させることに
より波長を変化させるものである。なお、４はフロント
ミラーである。また、このようなリトロー配置の場合に
用いられるグレーティング５としては、ホログラフィ
ク、ルールドおよびエシェールタイプのグレーティング
等を用いるが、エキシマレーザの場合、特に単一段で高
効率で狭帯域化する必要があるので、高分解能かつ高効
率のエシェールタイプのグレーティングが最適である。FIG. 1 is a block diagram showing a first embodiment, in which a total reflection mirror 6 is arranged between a grating 5 and a laser chamber 1 having windows 2 and 3 provided at both ends. The wavelength is changed by changing the angle with respect to the laser light 7. 4 is a front mirror. As the grating 5 used in such a Littrow arrangement, a holographic, ruled or escher type grating is used. In the case of an excimer laser, it is necessary to narrow the band with high efficiency in a single stage. Therefore, a high resolution and high efficiency shale type grating is most suitable.

第２図は第２の実施例を示すもので、レーザチャンバ
１とグレーティング５との間に、２つのプリズム8,9か
らなるビームエキスパンダを配設し、レーザ光をこのビ
ームエキスパンダで拡大してグレーティング５に入射さ
せるように構成し、波長はこのエキスパンダを構成する
プリズム8,9のいずれか一方の角度を変えることにより
制御するものである。FIG. 2 shows a second embodiment, in which a beam expander comprising two prisms 8, 9 is disposed between the laser chamber 1 and the grating 5, and the laser beam is expanded by this beam expander. The wavelength is controlled by changing the angle of one of the prisms 8 and 9 constituting the expander.

第３図は第３の実施例を示すもので、第２図のプリズ
ム８とレーザチャンバ１との間に全反射ミラー６を挿入
し、この全反射ミラー６の角度を変えることにより、波
長を制御するものである。FIG. 3 shows a third embodiment, in which a total reflection mirror 6 is inserted between the prism 8 and the laser chamber 1 in FIG. 2, and the wavelength of the total reflection mirror 6 is changed by changing the angle of the total reflection mirror 6. To control.

第４図は第４の実施例を示すもので、第３図のプリズ
ム8,9と全反射ミラー６の位置を逆にし、全反射ミラー
６の角度を変えることにより、波長を制御するものであ
る。FIG. 4 shows a fourth embodiment, in which the wavelengths are controlled by reversing the positions of the prisms 8 and 9 and the total reflection mirror 6 and changing the angle of the total reflection mirror 6 in FIG. is there.

第５図は第５の実施例を示すもので、第１図の全反射
ミラー６とレーザチャンバ１との間に、コリメータレン
ズ10,11を挿入した構成で、全反射ミラー６の角度を変
えることにより、波長を制御するものである。FIG. 5 shows a fifth embodiment, in which collimator lenses 10 and 11 are inserted between the total reflection mirror 6 and the laser chamber 1 in FIG. 1, and the angle of the total reflection mirror 6 is changed. Thus, the wavelength is controlled.

以上の実施例は全てリトロー配置であり、第１図の実
施例と同様な効果を得ることができる。In all of the above embodiments, the Littrow arrangement is used, and the same effects as in the embodiment of FIG. 1 can be obtained.

次に斜入射配置の実施例について説明する。 Next, an embodiment of the oblique incidence arrangement will be described.

第６図は第６の実施例を示すものであり、レーザチャ
ンバ１とグレーティング５との間に、全反射ミラー６を
配置し、この全反射ミラー６のレーザ光７に対する角度
を変化させることにより波長を変化させるもので、グレ
ーティング５には全反射ミラー12が一体で取付けてあ
る。FIG. 6 shows a sixth embodiment, in which a total reflection mirror 6 is arranged between the laser chamber 1 and the grating 5, and the angle of the total reflection mirror 6 with respect to the laser beam 7 is changed. The wavelength is changed, and a total reflection mirror 12 is integrally attached to the grating 5.

第７図は第７の実施例を示すもので、レーザチャンバ
１とグレーティング５との間に、２つのプリズム8,9か
らなるビームエキスパンダを配設し、レーザ光をこのビ
ームエキスパンダで拡大してグレーティング５に入射さ
せるように構成し、波長はこのエキスパンダを構成する
プリズム8,9のいずれか一方の角度を変えることにより
制御するものである。FIG. 7 shows a seventh embodiment, in which a beam expander comprising two prisms 8, 9 is arranged between a laser chamber 1 and a grating 5, and a laser beam is expanded by this beam expander. The wavelength is controlled by changing the angle of one of the prisms 8 and 9 constituting the expander.

第８図は第８の実施例を示すもので、第７図のプリズ
ム８とレーザチャンバ１との間に全反射ミラー６を挿入
し、この全反射ミラー６の角度を変えることにより、波
長を制御するものである。FIG. 8 shows an eighth embodiment, in which a total reflection mirror 6 is inserted between the prism 8 and the laser chamber 1 shown in FIG. 7, and the angle of the total reflection mirror 6 is changed to change the wavelength. To control.

第９図は第９の実施例を示すもので、第８図のプリズ
ム8,9と全反射ミラー６の位置を逆にし、全反射ミラー
６の角度を変えることにより、波長を制御するものであ
る。FIG. 9 shows a ninth embodiment in which the wavelengths are controlled by reversing the positions of the prisms 8, 9 and the total reflection mirror 6 in FIG. 8 and changing the angle of the total reflection mirror 6. is there.

第10図は第10の実施例を示すもので、第６図の全反射
ミラー６とレーザチャンバ１との間に、コリメータレン
ズ10,11を挿入した構成で、全反射ミラー６の角度を変
えることにより、波長を制御するものである。FIG. 10 shows a tenth embodiment, in which collimator lenses 10 and 11 are inserted between the total reflection mirror 6 and the laser chamber 1 in FIG. 6, and the angle of the total reflection mirror 6 is changed. Thus, the wavelength is controlled.

以上の第６図から第10図の斜入射配置の構成でも第１
図と同様な効果を得ることができる。Even in the configuration of the oblique incidence arrangement shown in FIGS.
The same effect as in the drawing can be obtained.

なお、上記実施例において、全反射ミラー、ビームエ
キスパンダを構成するプリズム等の角度を変化させる手
段としてはパルスモータ、圧電素子等を用いることがで
きる。In the above embodiment, a pulse motor, a piezoelectric element, or the like can be used as a means for changing the angle of a prism or the like constituting a total reflection mirror or a beam expander.

〔発明の効果〕〔The invention's effect〕

以上説明下用に本発明においては、グレーティングの角
度を変化させるのではなくて、グレーティングとレーザ
チャンバとの間に配設した小さな光学素子の角度を変化
させることによって波長を制御するため、高精度にかつ
高速に波長を制御でき、波長の安定性を向上させること
ができる。In the present invention, the wavelength is controlled not by changing the angle of the grating but by changing the angle of a small optical element disposed between the grating and the laser chamber. The wavelength can be controlled quickly and quickly, and the stability of the wavelength can be improved.

【図面の簡単な説明】[Brief description of the drawings]

第１図は本発明の第１の実施例を示す構成図、第２図は
本発明の第２の実施例を示す構成図、第３図は本発明の
第３の実施例を示す構成図、第４図は本発明の第４の実
施例を示す構成図、第５図は本発明の第５の実施例を示
す構成図、第６図は本発明の第６の実施例を示す構成
図、第７図は本発明の第７の実施例を示す構成図、第８
図は本発明の第８の実施例を示す構成図、第９図は本発
明の第９の実施例を示す構成図、第10図は本発明の第10
の実施例を示す構成図である。 １……レーザチャンバ、2,3……ウインドウ、４……フ
ロントミラー、５……グレーティング、6,12……全反射
ミラー、７……レーザ光、8,9……プリズム、10,11……
コリメータレンズ。FIG. 1 is a block diagram showing a first embodiment of the present invention, FIG. 2 is a block diagram showing a second embodiment of the present invention, and FIG. 3 is a block diagram showing a third embodiment of the present invention. FIG. 4 is a block diagram showing a fourth embodiment of the present invention, FIG. 5 is a block diagram showing a fifth embodiment of the present invention, and FIG. 6 is a block diagram showing a sixth embodiment of the present invention. FIG. 7 is a block diagram showing a seventh embodiment of the present invention.
FIG. 12 is a block diagram showing an eighth embodiment of the present invention, FIG. 9 is a block diagram showing a ninth embodiment of the present invention, and FIG.
FIG. 3 is a configuration diagram showing an example of the embodiment. 1 ... laser chamber, 2,3 ... window, 4 ... front mirror, 5 ... grating, 6,12 ... total reflection mirror, 7 ... laser beam, 8,9 ... prism, 10,11 ... …
Collimator lens.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−253686（ＪＰ，Ａ) 特開 平１−96619（ＪＰ，Ａ) 特開 平２−16782（ＪＰ，Ａ) 特開 平２−276283（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-63-253686 (JP, A) JP-A-1-96619 (JP, A) JP-A-2-16782 (JP, A) JP-A-2- 276283 (JP, A)

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】波長選択素子としてグレーティングを用い
たエキシマレーザにおいて、 レーザチャンバと前記グレーティングとの間に配設さ
れ、その角度を変化させることにより前記グレーティン
グの選択波長波長を制御する光学素子 を具えたレーザの波長制御装置。1. An excimer laser using a grating as a wavelength selecting element, comprising: an optical element disposed between a laser chamber and the grating, for controlling a selected wavelength wavelength of the grating by changing an angle thereof. Laser wavelength control device. 【請求項２】前記光学素子は、ミラーである請求項
（１）記載のレーザの波長制御装置。2. The laser wavelength control device according to claim 1, wherein said optical element is a mirror. 【請求項３】前記光学素子は、ビームエキスパンダを形
成するプリズムである請求項（１）記載のレーザの波長
制御装置。3. The laser wavelength control device according to claim 1, wherein said optical element is a prism forming a beam expander.
JP1129392A 1989-05-23 1989-05-23 Laser wavelength controller Expired - Fee Related JP2631554B2 (en)

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US6580517B2 (en) 2000-03-01 2003-06-17 Lambda Physik Ag Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp
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