JP2597366Y2 - Positive characteristic thermistor device - Google Patents
Positive characteristic thermistor deviceInfo
- Publication number
- JP2597366Y2 JP2597366Y2 JP1992091293U JP9129392U JP2597366Y2 JP 2597366 Y2 JP2597366 Y2 JP 2597366Y2 JP 1992091293 U JP1992091293 U JP 1992091293U JP 9129392 U JP9129392 U JP 9129392U JP 2597366 Y2 JP2597366 Y2 JP 2597366Y2
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- film
- coefficient thermistor
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Thermistors And Varistors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本考案は、正特性サーミスタ装置
に関し、更に詳しくは、正特性サーミスタを用いた電流
制限装置または発熱装置において、正特性サーミスタの
電極に接触する端子の酸化による劣化及びそれに伴う接
触抵抗の増大を防止するための改良に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature coefficient thermistor device, and more particularly, to a current limiting device or a heat generating device using a positive temperature coefficient thermistor, the deterioration of a terminal in contact with an electrode of the positive temperature coefficient thermistor and its deterioration. The present invention relates to an improvement for preventing an increase in contact resistance.
【０００２】[0002]
【従来の技術】正特性サーミスタを用いた電流制限装置
及び発熱装置は従来より周知である。電流制限装置の一
例として、例えば、実公昭５５ー４２４０２号公報など
に記載されるごとく、テレビジョン受像機のシャドウ．
マスクの磁化を消去する消磁装置が知られており、更
に、モータ起動用装置なども知られている。これらの装
置を構成する場合、一般に、正特性サーミスタの電極に
金属板材でなる端子を接触させ、端子を介して正特性サ
ーミスタに給電する。端子は金属板材で構成され、金属
板材の表面を金属膜によって被覆した構造を有する。金
属膜は金属板材の表面にＣｕ膜をメッキなどの手段によ
って付着させ、このＣｕ膜をＡｇ膜またはＳｎ膜によっ
て被覆した積層膜構造となっている。2. Description of the Related Art A current limiting device and a heating device using a PTC thermistor have been well known. As an example of the current limiting device, for example, as described in Japanese Utility Model Publication No. Sho 55-42402, a shadow.
A degaussing device for erasing the magnetization of a mask is known, and a motor starting device and the like are also known. When these devices are configured, generally, a terminal made of a metal plate material is brought into contact with an electrode of the PTC thermistor, and power is supplied to the PTC thermistor via the terminal. The terminal is made of a metal plate, and has a structure in which the surface of the metal plate is covered with a metal film. The metal film has a laminated film structure in which a Cu film is attached to the surface of a metal plate material by plating or the like, and the Cu film is covered with an Ag film or a Sn film.
【０００３】[0003]
【考案が解決しようとする課題】しかしながら、上述し
た積層膜構造の金属膜を有する端子を用いた場合、正特
性サーミスタが熱平衡した時の熱の影響を受けて、金属
板材の表面に付着されているＣｕ膜が酸化される。この
酸化現象は高温下でその進行性が極めて顕著に現れ、金
属板材表面に対するＣｕ膜の密着性劣化及び剥離を招
く。そして、端子と正特性サーミスタとの間の接触抵抗
が増大して両者間でスパークを発生し、焼損に至る場合
もある。However, when a terminal having a metal film having the above-mentioned laminated film structure is used, the positive characteristic thermistor is attached to the surface of the metal plate material under the influence of heat at the time of thermal equilibrium. Cu film is oxidized. The progress of this oxidation phenomenon is very remarkable at high temperatures, and causes the adhesion of the Cu film to the surface of the metal plate to be deteriorated and peeled off. Then, the contact resistance between the terminal and the positive temperature coefficient thermistor increases, and a spark is generated between the two, which may lead to burning.
【０００４】特に、２素子型消磁装置の場合は、残留電
流を減少させ消磁作用を増進させる手段として、消磁用
素子を加熱用素子で加熱し、熱平衡温度を高く取ってあ
るため、端子のＣｕ膜の酸化による劣化が著しい。[0004] In particular, in the case of a two-element degaussing device, as a means for reducing the residual current and enhancing the degaussing effect, the degaussing element is heated by a heating element to increase the thermal equilibrium temperature. Degradation due to oxidation of the film is remarkable.
【０００５】そこで、本考案の課題は、上述する従来の
問題点を解決し、端子の酸化による劣化及びそれに伴う
接触抵抗の増大を防止し得る正特性サーミスタ装置を提
供することである。It is an object of the present invention to solve the above-mentioned conventional problems and to provide a positive temperature coefficient thermistor device capable of preventing deterioration due to oxidation of terminals and an increase in contact resistance due to the deterioration.
【０００６】[0006]
【課題を解決するための手段】上述した課題解決のた
め、本考案は、正特性サーミスタと、端子とを有する正
特性サーミスタ装置であって、前記正特性サーミスタ
は、平板状素体の表面に電極を有しており、前記端子
は、金属板部材で構成され、前記正特性サーミスタの前
記電極に接触し、少なくとも接触部が第１の金属膜と、
第２の金属膜とを含み、前記第１の金属膜がＮｉ膜であ
って前記金属板部材の表面に付着され、前記第２の金属
膜が前記第１の金属膜を覆っている。According to the present invention, there is provided a positive temperature coefficient thermistor device having a positive temperature coefficient thermistor and a terminal, wherein the positive temperature coefficient thermistor is provided on a surface of a plate-shaped element body. Having an electrode, the terminal is formed of a metal plate member, is in contact with the electrode of the positive temperature coefficient thermistor, at least a contact portion is a first metal film,
A second metal film, wherein the first metal film is a Ni film and is attached to a surface of the metal plate member, and the second metal film covers the first metal film.
【０００７】[0007]
【作用】端子は金属板部材で構成され、正特性サーミス
タの電極に接触し、少なくとも接触部が第１の金属膜を
含み、第１の金属膜がＮｉ膜であって金属板部材の表面
に付着されているから、第１の金属膜の熱による劣化が
表面層に限定され、内部に進行せず、金属板材表面に対
するＮｉ膜の密着性が保たれ、剥離を招くことがない。
このため、端子と正特性サーミスタとの間の接触抵抗が
低い値に保たれ、両者間でのスパーク及び焼損が防止さ
れる。The terminal is constituted by a metal plate member, and is in contact with the electrode of the positive temperature coefficient thermistor, at least the contact portion includes a first metal film, the first metal film is a Ni film, and the terminal is formed on the surface of the metal plate member. Since the first metal film is adhered, the deterioration of the first metal film due to heat is limited to the surface layer, does not proceed inside, the adhesion of the Ni film to the surface of the metal plate material is maintained, and no peeling is caused.
For this reason, the contact resistance between the terminal and the positive temperature coefficient thermistor is kept at a low value, and sparking and burning between the two are prevented.
【０００８】金属膜は第２の金属膜を含んでおり、第２
の金属膜は、前記第１の金属膜を覆っており、第１の金
属膜とは異なる電気抵抗の小さな金属材料であるＡｇ膜
またはＳｎ膜で構成されているから、低い接触抵抗を確
保できる。[0008] The metal film is Nde including a second metal film, the second
The metal film covers the first metal film, since the first metal film is composed of a Ag film or Sn film is small metallic materials of different electrical resistance, can be secured with low contact resistance .
【０００９】[0009]
【実施例】図１は本考案に係る正特性サーミスタ装置の
部分断面図である。図において、１はケース、２は正特
性サーミスタ、４及び５は端子である。FIG. 1 is a partial sectional view of a PTC thermistor device according to the present invention. In the figure, 1 is a case, 2 is a positive temperature coefficient thermistor, and 4 and 5 are terminals.
【００１０】ケース１は、底部材１１と、キャップ部材
１２との組合せで構成されている。底部材１１及びキャ
ップ部材１２は適当な耐熱絶縁プラスチックの成形品と
して構成されている。正特性サーミスタ２は正特性サー
ミスタ素体２１の厚み方向の両面に電極２２、２３を設
けた構造となっている。The case 1 is constituted by a combination of a bottom member 11 and a cap member 12. The bottom member 11 and the cap member 12 are formed as molded products of a suitable heat-resistant insulating plastic. The positive temperature coefficient thermistor 2 has a structure in which electrodes 22 and 23 are provided on both surfaces in the thickness direction of a positive temperature coefficient thermistor body 21.
【００１１】端子４、５は底部材１１の一面側から他面
側に貫通して設けられている。端子４、５は金属板部材
で構成され、正特性サーミスタ２の電極２２、２３に接
触し、少なくとも接触部が表面に金属膜を有している。
図２は端子４の拡大断面図である。金属膜は、第１の金
属膜４１０と、第２の金属膜４２０とを含んでいる。第
１の金属膜４１０はＮｉ膜であって金属板部材４００の
表面に付着され、第２の金属膜４２０は第１の金属膜４
１０を覆っている。第１の金属膜４１０及び第２の金属
膜４２０は、一般には、メッキ膜である。第１の金属膜
４１０は厚みが２．０μｍ以上となるように形成するの
が望ましい。第２の金属膜４２０はＳｎ膜またはＡｇ膜
の少なくとも一種を含むように形成する。第２の金属膜
４２０は厚みが３．０μｍ以上となるように形成するの
が望ましい。図示は省略するが端子５も同様の構成にな
る。The terminals 4 and 5 are provided to penetrate the bottom member 11 from one surface side to the other surface side. The terminals 4 and 5 are made of a metal plate member and are in contact with the electrodes 22 and 23 of the positive temperature coefficient thermistor 2, and at least the contact portions have a metal film on the surface.
FIG. 2 is an enlarged sectional view of the terminal 4. The metal film includes a first metal film 410 and a second metal film 420. The first metal film 410 is a Ni film and is attached to the surface of the metal plate member 400, and the second metal film 420 is a first metal film 4.
Covers 10. The first metal film 410 and the second metal film 420 are generally plating films. The first metal film 410 is preferably formed to have a thickness of 2.0 μm or more. The second metal film 420 is formed to include at least one of a Sn film and an Ag film. The second metal film 420 is desirably formed so as to have a thickness of 3.0 μm or more. Although not shown, the terminal 5 has the same configuration.
【００１２】上述のように、端子４（または５）は金属
板部材４００で構成され、正特性サーミスタ２の電極２
２、２３に接触し、少なくとも接触部が表面に金属膜４
１０を有しており、金属膜は第１の金属膜４１０がＮｉ
膜であって金属板部材４００の表面に付着されているか
ら、熱による劣化が第１の金属膜４１０の表面層に限定
され、内部に進行せず、金属板部材４００の表面に対す
るＮｉ膜の密着性が保たれ、剥離を招くことがない。こ
のため、端子４（または５）と正特性サーミスタ２との
間の接触抵抗が低い値に保たれ、両者４（または５）、
２の間でのスパーク及び焼損が防止される。As described above, the terminal 4 (or 5) is formed of the metal plate member 400, and the electrode 2 of the positive temperature coefficient thermistor 2 is formed.
2 and 23, and at least the contact portion has a metal film 4 on the surface.
10, the first metal film 410 is made of Ni
Since the film is attached to the surface of the metal plate member 400, deterioration due to heat is limited to the surface layer of the first metal film 410, does not progress inside, and the Ni film Adhesion is maintained, and peeling does not occur. For this reason, the contact resistance between the terminal 4 (or 5) and the positive temperature coefficient thermistor 2 is maintained at a low value, and both 4 (or 5),
Sparks and burnout between the two are prevented.
【００１３】第２の金属膜４２０は、第１の金属膜４１
０を覆っており、第１の金属膜４１０とは異なる電気抵
抗の小さな金属材料であるＡｇ膜またはＳｎ膜で構成さ
れているから、低い接触抵抗を確保できる。The second metal film 420 is formed of the first metal film 41
Covers the 0, is composed of a Ag film or Sn film is small metallic materials of different electrical resistance than the first metal film 410
Because they are, it can be secured with low contact resistance.
【００１４】次に、実験データを挙げて、本願考案の効
果を具体的に説明する。図３は図１及び図２に示した構
造を有する正特性サーミスタ装置の試験条件を示す図、
図４は接触抵抗測定回路を示す図、図５は図３及び図４
に示す試験条件によって得られた正特性サーミスタ装置
の実験データを示す図である。試験条件は次の通りであ
る。Next, the effects of the present invention will be specifically described with reference to experimental data. FIG. 3 is a diagram showing test conditions of the PTC thermistor device having the structure shown in FIGS. 1 and 2;
FIG. 4 is a diagram showing a contact resistance measuring circuit, and FIG. 5 is a diagram showing FIGS.
FIG. 7 is a diagram showing experimental data of a positive temperature coefficient thermistor device obtained under the test conditions shown in FIG. The test conditions are as follows.
【００１５】＜図３に示す試験条件＞ 正特性サーミスタ２として、直径１３．３ｍｍ、厚み
２．２ｍｍの円板状であって、常温（２５℃）抵抗値が
５Ω±２０％のものを用いた。正特性サーミスタ２は２
５℃で１００Ｖを印加した時、表面温度が１１５℃であ
った。上記構成の正特性サーミスタ２を用い、２種類の
正特性サーミスタ装置を構成した。１つは端子４、５の
表面にメッキによるＣｕ膜を付着させ、その上にＳｎ膜
をメッキによって付着させた正特性サーミスタ装置（従
来品と称する）であり、他は端子４、５の表面にメッキ
によるＮｉ膜を付着させ、その上にＳｎ膜をメッキによ
って付着させた本考案に係る正特性サーミスタ装置（本
考案品と称する）である。電源８として１３５Ｖの交流
電源を用いた。負荷抵抗ＲＬは５．５Ωとした。周囲温
度は８５℃に保った。９はスイッチである。<Test conditions shown in FIG. 3> As the positive temperature coefficient thermistor 2, a disk having a diameter of 13.3 mm and a thickness of 2.2 mm and a resistance value at room temperature (25 ° C.) of 5Ω ± 20% is used. Was. Positive thermistor 2 is 2
When 100 V was applied at 5 ° C., the surface temperature was 115 ° C. Two types of positive-characteristic thermistor devices were configured using the positive-characteristic thermistor 2 having the above configuration. One is a positive temperature coefficient thermistor device (referred to as a conventional product) in which a Cu film is deposited on the surfaces of the terminals 4 and 5 by plating, and an Sn film is deposited thereon by plating, and the other is the surface of the terminals 4 and 5. Is a PTC thermistor device according to the present invention in which a Ni film is deposited by plating and a Sn film is deposited thereon by plating (referred to as a product of the present invention). An AC power supply of 135 V was used as the power supply 8. The load resistance RL was set to 5.5Ω. Ambient temperature was kept at 85 ° C. 9 is a switch.
【００１６】＜図４に示す試験条件＞ 正特性サーミスタ２の電極２３（または２２）と端子４
（または５）との間に定電流源から１Ａの定電流を流
し、端子接触部近傍の電位差を電位差計ｖで測定し、電
流及び電位差に基づき計算によって接触抵抗を求めた。<Test conditions shown in FIG. 4> The electrode 23 (or 22) of the positive temperature coefficient thermistor 2 and the terminal 4
(Or 5), a constant current of 1 A was passed from a constant current source, a potential difference near the terminal contact portion was measured by a potentiometer v, and a contact resistance was obtained by calculation based on the current and the potential difference.
【００１７】図５の試験データに示すように、（Ｎｉ＋
Ｓｎ）の端子メッキ構成を有する本考案品は、従来品と
比較して、初期接触抵抗が少し高いものの、接触抵抗の
経時変化が極めて小さい。１つの比較例として、１７０
００時間後の接触抵抗及び変化率を見ると、従来品では
接触抵抗値が１．５８（ｍΩ）、変化率（初期値に対す
る）が１１０．７（％）になるのに対し、本考案品は接
触抵抗値が１．３８（ｍΩ）、変化率が７４．７（％）
である。As shown in the test data of FIG. 5, (Ni +
Although the product of the present invention having the terminal plating configuration of Sn) has a slightly higher initial contact resistance than the conventional product, the change with time of the contact resistance is extremely small. As one comparative example, 170
Looking at the contact resistance and change rate after 00 hours, the contact resistance value of the conventional product is 1.58 (mΩ) and the change rate (relative to the initial value) is 110.7 (%), whereas the product of the present invention is Has a contact resistance of 1.38 (mΩ) and a rate of change of 74.7 (%)
It is.
【００１８】図６は本考案に係る正特性サーミスタ装置
の別の実施例を示す部分断面図である。図において、図
１と同一の参照符号は同一性ある構成部分を示してい
る。３は正特性サーミスタ、６は端子である。図６は２
素子型消磁装置として用いるのに好適な正特性サーミス
タ装置を示している。２個の正特性サーミスタ２、３が
備えられ、それぞれが互いに熱結合されている。正特性
サーミスタ２は電流制限素子として用いられ、正特性サ
ーミスタ３は加熱素子として用いられ、正特性サーミス
タ２を正特性サーミスタ３によって加熱し、正特性サー
ミスタ２の熱平衡温度を高くし、残留電流を減少させ、
消磁作用を増進させる。FIG. 6 is a partial sectional view showing another embodiment of the positive temperature coefficient thermistor device according to the present invention. In the figure, the same reference numerals as those in FIG. 1 indicate the same components. 3 is a positive temperature coefficient thermistor and 6 is a terminal. FIG.
1 shows a PTC thermistor device suitable for use as an element type degaussing device. Two positive temperature coefficient thermistors 2, 3 are provided, each of which is thermally coupled to each other. The PTC thermistor 2 is used as a current limiting element, and the PTC thermistor 3 is used as a heating element. The PTC thermistor 2 is heated by the PTC thermistor 3 to increase the thermal equilibrium temperature of the PTC thermistor 2 and reduce the residual current. Decrease
Increases degaussing effect.
【００１９】端子５は正特性サーミスタ２ー３間に配置
されている。端子４〜６は、前述したと同様に、金属板
部材で構成され、表面に金属膜を有する。金属膜は第１
の金属膜がＮｉ膜であって金属板部材の表面に付着さ
れ、第２の金属膜が第１の金属膜を覆っている。この構
造により、端子４〜６の熱による劣化がＮｉ膜の表面層
に限定され、内部に進行せず、金属板材の表面に対する
Ｎｉ膜の密着性が保たれ、剥離を招くことがない。この
ため、端子４〜６と正特性サーミスタ２との間の接触抵
抗が低い値に保たれ、両者間でのスパーク及び焼損が防
止される。The terminal 5 is arranged between the positive temperature coefficient thermistors 2-3. The terminals 4 to 6 are made of a metal plate member and have a metal film on the surface, as described above. Metal film is first
Is a Ni film adhered to the surface of the metal plate member, and the second metal film covers the first metal film. With this structure, the deterioration of the terminals 4 to 6 due to heat is limited to the surface layer of the Ni film, does not progress inside, the adhesion of the Ni film to the surface of the metal plate material is maintained, and no peeling is caused. For this reason, the contact resistance between the terminals 4 to 6 and the positive temperature coefficient thermistor 2 is kept at a low value, and sparking and burning between the two are prevented.
【００２０】次に、実験データを挙げて、図６に示した
実施例の効果を具体的に説明する。図７は図６に示した
構造を有する正特性サーミスタ装置の試験条件を示す
図、図８及び図９はその実験データを示す図である。試
験条件は次の通りである。Next, the effects of the embodiment shown in FIG. 6 will be specifically described with reference to experimental data. FIG. 7 is a diagram showing test conditions of the PTC thermistor device having the structure shown in FIG. 6, and FIGS. 8 and 9 are diagrams showing experimental data. The test conditions are as follows.
【００２１】正特性サーミスタ２として、直径１３．３
ｍｍ、厚み２．２ｍｍの円板状であって、常温（２５
℃）抵抗値が５Ω±２０％のものを用いた。正特性サー
ミスタ２は２５℃で１００Ｖを印加した時の表面温度が
１１５℃であった。正特性サーミスタ３は直径１２ｍ
ｍ、厚み２．０ｍｍの円板状であって、常温抵抗１００
〜４００Ω、表面温度１４４℃（２５℃、１００Ｖ印
加）のものを用いた。上記構成の正特性サーミスタ２、
３を用い、２種類の正特性サーミスタ装置を構成した。
１つは端子４〜６の表面にメッキによるＣｕ膜を付着さ
せ、その上にＳｎ膜をメッキによって付着させた正特性
サーミスタ装置（従来品と称する）であり、他は端子４
〜６の表面にメッキによるＮｉ膜を付着させ、その上に
Ｓｎ膜をメッキによって付着させた本考案に係る正特性
サーミスタ装置（本考案品と称する）である。電源８と
して１３５Ｖの交流電源を用いた。負荷抵抗ＲＬは５．
５Ωとした。周囲温度は８５℃に保った。９はスイッチ
である。接触抵抗は図４に示した方法によって求めた。The positive characteristic thermistor 2 has a diameter of 13.3.
mm, a disk shape with a thickness of 2.2 mm.
° C) The resistance value was 5Ω ± 20%. The positive temperature thermistor 2 had a surface temperature of 115 ° C. when a voltage of 100 V was applied at 25 ° C. Positive characteristic thermistor 3 is 12m in diameter
m, 2.0 mm thick disk-shaped
〜400 Ω and a surface temperature of 144 ° C. (25 ° C., 100 V applied) were used. The positive characteristic thermistor 2 having the above configuration,
3, two types of positive temperature coefficient thermistor devices were constructed.
One is a positive temperature coefficient thermistor device (hereinafter referred to as a conventional product) in which a Cu film is deposited on the surfaces of the terminals 4 to 6 by plating and a Sn film is deposited thereon by plating.
6 is a positive temperature coefficient thermistor device according to the present invention (hereinafter referred to as the present invention product) in which a Ni film is adhered by plating on the surfaces of Nos. 6 to 6, and an Sn film is adhered thereon by plating. An AC power supply of 135 V was used as the power supply 8. The load resistance RL is 5.
It was set to 5Ω. Ambient temperature was kept at 85 ° C. 9 is a switch. The contact resistance was determined by the method shown in FIG.
【００２２】図８、９のデータに示すように、（Ｎｉ＋
Ｓｎ）の端子メッキ構成を有する本考案品は、従来品と
比較して、初期接触抵抗が少し高いものの、接触抵抗の
経時変化が極めて小さい。１つの比較例として、図８を
参照し、１８０００時間後の接触抵抗及び変化率を見る
と、従来品は接触抵抗値が１．８２（ｍΩ）、変化率が
１３６．３（％）になるのに対し、本考案品は接触抵抗
値が１．６９（ｍΩ）、変化率が９６．５（％）となっ
ている。また、図９を参照し、１８０００時間後の接触
抵抗及び変化率を見ると、従来品では正特性サーミスタ
２と端子５との間の接触抵抗値が２．３５（ｍΩ）、変
化率が２０２．４（％）になるのに対し、本考案品は接
触抵抗値が２．０６（ｍΩ）、変化率が１３９．５
（％）である。As shown in the data of FIGS. 8 and 9, (Ni +
Although the product of the present invention having the terminal plating configuration of Sn) has a slightly higher initial contact resistance than the conventional product, the change with time of the contact resistance is extremely small. As one comparative example, referring to FIG. 8 and looking at the contact resistance and the change rate after 18000 hours, the conventional product has a contact resistance value of 1.82 (mΩ) and a change rate of 136.3 (%). On the other hand, the product of the present invention has a contact resistance value of 1.69 (mΩ) and a change rate of 96.5 (%). Referring to FIG. 9, the contact resistance and the change rate after 18000 hours are observed. In the conventional product, the contact resistance value between the positive temperature coefficient thermistor 2 and the terminal 5 is 2.35 (mΩ), and the change rate is 202. .4 (%), the product of the present invention has a contact resistance of 2.06 (mΩ) and a rate of change of 139.5.
(%).
【００２３】図１０は本考案に係る正特性サーミスタ装
置の更に具体的な実施例における平面部分断面図、図１
１は図１０に示した正特性サーミスタ装置の正面部分断
面図、図１２は図１１のＡ１２ーＡ１２線上における側
面部分断面図、図１３は図１１のＡ１３ーＡ１３線上に
おける側面部分断面図、図１４は図１０に示した正特性
サーミスタ装置の底面図である。図において、図１及び
図６と同一の参照符号は同一性ある構成部分を示してい
る。FIG. 10 is a plan partial sectional view of a more specific embodiment of the PTC thermistor device according to the present invention.
1 is a front partial cross-sectional view of the positive temperature coefficient thermistor device shown in FIG. 10, FIG. 12 is a side partial cross-sectional view taken along line A12-A12 in FIG. 11, FIG. 13 is a side partial cross-sectional view taken along line A13-A13 in FIG. FIG. 14 is a bottom view of the positive temperature coefficient thermistor device shown in FIG. In the drawings, the same reference numerals as those in FIGS. 1 and 6 indicate the same components.
【００２４】ケース１は、底部材１１が一面側から他面
側に貫通する複数の孔１１１、１１２、１１３を有する
とともに、孔１１１、１１３の付近に端子受け部１１
４、１１５を有する（図１２参照）。端子受け部１１
４、１１５は、底部材１１の他面側に突出して設けた突
起１１６、１１７を通る孔１１１、１１３の内壁面に溝
状に形成されている。キャップ部材１２は底部材１１の
一面上に装着され、孔１１１、１１３の上方に位置する
内側面に、凹部状の端子受け部１２１、１２２を有す
る。The case 1 has a plurality of holes 111, 112, 113 through which the bottom member 11 penetrates from one surface side to the other surface side, and has terminal receiving portions 11 near the holes 111, 113.
4 and 115 (see FIG. 12). Terminal receiving part 11
The grooves 4 and 115 are formed in grooves on the inner wall surfaces of the holes 111 and 113 passing through the protrusions 116 and 117 provided on the other surface of the bottom member 11. The cap member 12 is mounted on one surface of the bottom member 11, and has concave terminal receiving portions 121 and 122 on the inner surface located above the holes 111 and 113.
【００２５】正特性サーミスタ２、３は、正特性サーミ
スタ素体２１、３１の厚み方向の両面に電極（２２、２
３）、（３２、３３）を設けた構造となっている。これ
らの正特性サーミスタ２、３のうち、正特性サーミスタ
２は消磁用として備えられており、正特性サーミスタ３
は加熱用として備えられている。正特性サーミスタ２、
３は、金属板でなる平板状の共通の端子５を間に挟んで
重ね合せると共に、弾力性のある端子４、６で弾力的に
挾持した構造となっている。The positive temperature coefficient thermistors 2 and 3 have electrodes (22, 2) on both surfaces in the thickness direction of the positive temperature coefficient thermistor bodies 21 and 31, respectively.
3) and (32, 33) are provided. Of these positive temperature coefficient thermistors 2 and 3, the positive temperature coefficient thermistor 2 is provided for demagnetization.
Are provided for heating. Positive characteristic thermistor 2,
Reference numeral 3 denotes a structure in which a flat common terminal 5 made of a metal plate is interposed and overlapped, and elastically held between elastic terminals 4 and 6.
【００２６】端子４〜６は、金属板部材で構成され、表
面に金属膜を有する。金属膜は第１の金属膜がＮｉ膜で
あって金属板部材の表面に付着され、第２の金属膜が第
１の金属膜を覆っている。この構造により、端子４〜６
の熱による劣化がＮｉ膜の表面層に限定され、内部に進
行せず、金属板材の表面に対するＮｉ膜の密着性が保た
れ、剥離を招くことがない。このため、端子４〜６と正
特性サーミスタ２との間の接触抵抗が低い値に保たれ、
両者間でのスパーク及び焼損が防止される。The terminals 4 to 6 are made of a metal plate member and have a metal film on the surface. In the metal film, the first metal film is a Ni film and is attached to the surface of the metal plate member, and the second metal film covers the first metal film. With this structure, terminals 4 to 6
Of the Ni film is limited to the surface layer of the Ni film, does not progress inside, the adhesion of the Ni film to the surface of the metal plate material is maintained, and peeling does not occur. For this reason, the contact resistance between the terminals 4 to 6 and the positive temperature coefficient thermistor 2 is kept at a low value,
Sparks and burnout between the two are prevented.
【００２７】端子４〜６は、更に、孔１１１〜１１３を
通り底部材１１の一面側から他面側に貫通して設けられ
ている。そのうちの２本である端子４及び端子６は、正
特性サーミスタ２、３を両面側から挟み込むように配置
されている。端子４及び６のそれぞれは、底部材１１の
一面側に位置する第１の突起４１、６１と、他面側に位
置する第２の突起４２、６２とを有し、第１の突起４
１、６１がキャップ部材１２の端子受け部１２１、１２
２に掛け止められ、第２の突起４２、６２が第１の突起
４１、６１とは逆向きに底部材１１の端子受け部１１
４、１１５に掛け止められ、両掛け止めにより底部材１
１とキャップ部材１２とを結合している。The terminals 4 to 6 are further provided to pass through the holes 111 to 113 from one side of the bottom member 11 to the other side. Two of the terminals 4 and 6 are arranged so as to sandwich the PTC thermistors 2 and 3 from both sides. Each of the terminals 4 and 6 has first projections 41 and 61 located on one surface side of the bottom member 11 and second projections 42 and 62 located on the other surface side.
1, 61 are terminal receiving portions 121, 12 of the cap member 12.
2, and the second protrusions 42, 62 face the terminal receiving portions 11 of the bottom member 11 in the opposite direction to the first protrusions 41, 61.
4, 115, the bottom member 1
1 and the cap member 12 are connected.
【００２８】端子４、６は、正特性サーミスタ２、３の
電極２３、３２に接触するバネ性の接触部４３、６３
と、ケース１の外部に導出される端子部４４、６４を有
している。端子５は、正特性サーミスタ２の電極２２及
び正特性サーミスタ３の電極３３の間に介在して設けら
れている。The terminals 4 and 6 are provided with spring-like contact portions 43 and 63 which contact the electrodes 23 and 32 of the positive temperature coefficient thermistors 2 and 3, respectively.
And terminal portions 44 and 64 led out of the case 1. The terminal 5 is provided between the electrode 22 of the PTC thermistor 2 and the electrode 33 of the PTC thermistor 3.
【００２９】実施例に示すように、ケース１は底部材１
１が一面側から他面側に貫通する複数の孔１１１〜１１
３を有するとともに、孔１１１、１１３の付近に端子受
け部１１４、１１５を有し、キャップ部材１２が底部材
１１の一面上に装着され孔１１１、１１３の上方に位置
する内側面に端子受け部１２１、１２２を有しており、
端子４〜６のうち、正特性サーミスタ２、３を両面側か
ら挟み込むように配置された２本の端子４、６のそれぞ
れが、底部材１１の一面側に位置する第１の突起４１、
６１と、他面側に位置する第２の突起４２、６２とを有
し、第１の突起４１、６１がキャップ部材１２の端子受
け部１２１、１２２に掛け止められ、第２の突起４２、
６２が第１の突起４１、６１とは逆向きに底部材１２の
端子受け部１２１、１２２に掛け止められ、両掛け止め
により底部材１１とキャップ部材１２とを結合している
から、ケース１を構成する底部材１１とキャップ部材１
２との間の機械的結合強度が大きくなる。このため、落
下試験においても、消磁回路組立工程において振動や落
下等の衝撃を受けても、底板部材１１とキャップ部材１
２とが分離したり、両者１１、１２の嵌合部が破損して
キャップ部材１２が脱落してしまう等の問題を生じなく
なる。As shown in the embodiment, the case 1
A plurality of holes 111 to 11 penetrating from one surface side to the other surface side
3 and terminal receiving portions 114 and 115 in the vicinity of the holes 111 and 113, and the cap member 12 is mounted on one surface of the bottom member 11 and the terminal receiving portions are provided on the inner surface located above the holes 111 and 113. 121, 122,
Of the terminals 4 to 6, each of the two terminals 4, 6 arranged so as to sandwich the PTC thermistors 2, 3 from both sides is a first projection 41 located on one surface side of the bottom member 11,
61, and second projections 42 and 62 located on the other surface side. The first projections 41 and 61 are hooked on the terminal receiving portions 121 and 122 of the cap member 12, and the second projections 42 and
62 is hooked on the terminal receiving portions 121, 122 of the bottom member 12 in a direction opposite to the first protrusions 41, 61, and the bottom member 11 and the cap member 12 are joined by the both hooks. Member 11 and cap member 1 constituting
2 increases in mechanical coupling strength. For this reason, even in a drop test, even if the bottom plate member 11 and the cap member 1
This eliminates problems such as separation of the cap member 12 and the cap member 12 falling off due to breakage of the fitting portion between the two.
【００３０】底部材１１及びキャップ部材１２は、接触
面の少なくとも一部に凹部を有し、凹部内に充填された
接着剤７により接合されている。かかる構造を取ること
により、接着剤７のはみ出しを防止しつつ、底部材１１
及びキャップ部材１２をより一層強固に結合できる。凹
部はキャップ部材１２の端面に設けてもよい。The bottom member 11 and the cap member 12 have a concave portion on at least a part of the contact surface, and are joined by the adhesive 7 filled in the concave portion. By adopting such a structure, the bottom member 11 can be prevented while preventing the adhesive 7 from protruding.
Further, the cap member 12 can be more firmly joined. The recess may be provided on the end face of the cap member 12.
【００３１】図示の端子５は、正特性サーミスタ２の電
極２２及び正特性サーミスタ３の電極３３に共通に接触
する接触部５１と、ケース１の底部材１１を貫通して外
部に導出される端子部５２と、迂回部５３とを有してい
る。これらは、同一の金属板材にプレス加工等を施して
同体に形成されている。The illustrated terminal 5 has a contact portion 51 that is in common contact with the electrode 22 of the positive temperature coefficient thermistor 2 and the electrode 33 of the positive temperature coefficient thermistor 3, and a terminal that extends to the outside through the bottom member 11 of the case 1. It has a part 52 and a detour part 53. These are formed in the same body by subjecting the same metal plate to press working or the like.
【００３２】迂回部５３は、接触部５１よりは狭い幅の
狭幅路となっていて、接触部５１の側方に間隔を隔てて
配置されている。迂回部５３の一端部は、接触部５１の
上方に連接され、他端部は端子部５２に連接され、接触
部５１及び端子部５２に対して、電気的、熱的な直列回
路を形成している。迂回部５３は接触部５１の面から浮
かしてあり、正特性サーミスタ２との接触を防止してあ
る。また、上述のようにして浮かされた迂回部５３に正
特性サーミスタ３が接触するのを阻止するため、迂回部
５３と対向する接触部５１の端縁に阻止片５４を突設し
てある。The bypass portion 53 is a narrow path having a width smaller than that of the contact portion 51, and is arranged on the side of the contact portion 51 with an interval. One end of the detour portion 53 is connected above the contact portion 51, and the other end is connected to the terminal portion 52, forming an electrical and thermal series circuit with the contact portion 51 and the terminal portion 52. ing. The detour portion 53 is floated from the surface of the contact portion 51 to prevent contact with the thermistor 2. Further, in order to prevent the PTC thermistor 3 from coming into contact with the detour portion 53 floated as described above, a blocking piece 54 is protruded from an edge of the contact portion 51 facing the detour portion 53.
【００３３】更に、迂回部５３、及び端子部５２は、そ
の機械的強度を増大させるため、面に凹または凸による
補強部５３１、５２１がスジ状に設けられている。端子
部５２は、更に、突起５５を有し、突起５５が底部材１
１の他面側に掛け止められている。端子５は、機械的強
度を補うために、全体に電気メッキを施すのが望まし
い。Further, in order to increase the mechanical strength of the detour portion 53 and the terminal portion 52, reinforcing portions 531 and 521 formed by a concave or convex surface are provided in a stripe shape. The terminal portion 52 further has a protrusion 55, and the protrusion 55 is connected to the bottom member 1.
1 is hooked on the other side. It is preferable that the terminal 5 be entirely electroplated in order to supplement the mechanical strength.
【００３４】図１５は本考案に係る正特性サーミスタ装
置を使用したカラーテレビ消磁回路を示し、Ｃが当該正
特性サーミスタ装置である。８は交流電源、９は電源投
入用のスイッチ、１０は消磁コイルである。FIG. 15 shows a color television degaussing circuit using the PTC thermistor device according to the present invention, wherein C is the PTC thermistor device. Reference numeral 8 denotes an AC power supply, 9 denotes a power-on switch, and 10 denotes a degaussing coil.
【００３５】正特性サーミスタ２に対して、正特性サー
ミスタ３を熱結合させた場合、正特性サーミスタ２が正
特性サーミスタ３によって加熱され、正特性サーミスタ
２の動作温度が単独の場合よりも高い温度に移行する。
このため、正特性サーミスタ２の安定動作時抵抗値が高
くなり、消磁コイル１０に流れる平衡点電流が低下す
る。平衡点電流を減少させるには、正特性サーミスタ２
の抵抗値をできるだけ高い値に持ち上げる必要があり、
正特性サーミスタ３としては、正特性サーミスタ２より
も、抵抗値及びスイッチング温度の高いものが使用され
る。従って、正特性サーミスタ２と正特性サーミスタ３
との間にある共通の端子５はかなり高い温度で加熱され
る。When the PTC thermistor 2 is thermally coupled to the PTC thermistor 2, the PTC thermistor 2 is heated by the PTC thermistor 3, and the operating temperature of the PTC thermistor 2 is higher than that when the PTC thermistor 2 is used alone. Move to
For this reason, the resistance value of the positive characteristic thermistor 2 at the time of stable operation increases, and the equilibrium current flowing through the degaussing coil 10 decreases. To reduce the equilibrium point current, a positive temperature coefficient thermistor 2
Must be raised to the highest possible value,
As the PTC thermistor 3, a PTC thermistor having a higher resistance value and a higher switching temperature than the PTC thermistor 2 is used. Therefore, the positive characteristic thermistor 2 and the positive characteristic thermistor 3
Are heated at a considerably higher temperature.
【００３６】ここで、端子４〜６は、金属板部材で構成
され、表面に金属膜を有する。金属膜は第１の金属膜が
Ｎｉ膜であって金属板部材の表面に付着され、第２の金
属膜が第１の金属膜を覆っている。このため、端子４〜
６の熱による劣化がＮｉ膜の表面層に限定され、内部に
進行せず、金属板材の表面に対するＮｉ膜の密着性が保
たれ、剥離を招くことがない。このため、端子４〜６と
正特性サーミスタ２との間の接触抵抗が低い値に保た
れ、両者間でのスパーク及び焼損が防止される。Here, the terminals 4 to 6 are made of a metal plate member and have a metal film on the surface. In the metal film, the first metal film is a Ni film and is attached to the surface of the metal plate member, and the second metal film covers the first metal film. Therefore, terminals 4 to
The deterioration due to heat of 6 is limited to the surface layer of the Ni film, does not progress inside, the adhesion of the Ni film to the surface of the metal plate material is maintained, and the peeling does not occur. For this reason, the contact resistance between the terminals 4 to 6 and the positive temperature coefficient thermistor 2 is kept at a low value, and sparking and burning between the two are prevented.
【００３７】[0037]
【考案の効果】以上述べたように、本考案によれば、次
のような効果が得られる。 （ａ）端子は金属板部材で構成され、正特性サーミスタ
の電極に接触し、少なくとも接触部が第１の金属膜を含
み、第１の金属膜がＮｉ膜であって金属板部材の表面に
付着されているから、端子と正特性サーミスタとの間の
接触抵抗が低い値に保たれ、両者間でのスパーク及び焼
損を生じにくい正特性サーミスタ装置を提供できる。 （ｂ）少なくとも接触部が第２の金属膜を含み、第２の
金属膜が第１の金属膜を覆っているので、第２の金属膜
を第１の金属膜とは異なる電気抵抗の小さな金属材料、
例えばＡｇ膜またはＳｎ膜で構成し、低い接触抵抗を確
保し得る正特性サーミスタ装置を提供できる。As described above, according to the present invention, the following effects can be obtained. (A) The terminal is made of a metal plate member, and is in contact with the electrode of the positive temperature coefficient thermistor, at least the contact portion includes a first metal film, and the first metal film is a Ni film, and is formed on the surface of the metal plate member. Due to the attachment, the contact resistance between the terminal and the positive temperature coefficient thermistor is kept at a low value, and a positive temperature coefficient thermistor device that does not easily cause sparking and burning between the two can be provided. (B) Since at least the contact portion includes the second metal film and the second metal film covers the first metal film, the second metal film has a small electric resistance different from that of the first metal film. Metal material,
For example, it is possible to provide a positive temperature coefficient thermistor device made of an Ag film or a Sn film and capable of securing a low contact resistance.
【図１】本考案に係る正特性サーミスタ装置の部分断面
図である。FIG. 1 is a partial cross-sectional view of a positive temperature coefficient thermistor device according to the present invention.
【図２】本考案に係る正特性サーミスタ装置に用いられ
る端子の拡大断面図である。FIG. 2 is an enlarged sectional view of a terminal used in the positive temperature coefficient thermistor device according to the present invention.
【図３】図１及び図２に示した構造を有する正特性サー
ミスタ装置の試験条件を示す図である。FIG. 3 is a diagram showing test conditions of a positive temperature coefficient thermistor device having the structure shown in FIGS. 1 and 2;
【図４】正特性サーミスタと端子との間の接触抵抗測定
回路を示す図である。FIG. 4 is a diagram illustrating a circuit for measuring a contact resistance between a positive temperature coefficient thermistor and a terminal.
【図５】図３及び図４に示す試験条件によって得られた
正特性サーミスタ装置の実験データを示す図である。FIG. 5 is a view showing experimental data of the positive temperature coefficient thermistor obtained under the test conditions shown in FIGS. 3 and 4.
【図６】本考案に係る正特性サーミスタ装置の別の実施
例を示す部分断面図である。FIG. 6 is a partial sectional view showing another embodiment of the positive temperature coefficient thermistor device according to the present invention.
【図７】図６に示した構造を有する正特性サーミスタ装
置の試験条件を示す図である。FIG. 7 is a view showing test conditions of a positive temperature coefficient thermistor device having the structure shown in FIG. 6;
【図８】図６に示した構造を有する正特性サーミスタ装
置の実験データを示す図である。8 is a diagram showing experimental data of a positive temperature coefficient thermistor device having the structure shown in FIG. 6;
【図９】図６に示した構造を有する正特性サーミスタ装
置の実験データを示す図である。9 is a diagram showing experimental data of a positive temperature coefficient thermistor device having the structure shown in FIG. 6;
【図１０】本考案に係る正特性サーミスタ装置の平面部
分断面図である。FIG. 10 is a partial plan sectional view of the PTC thermistor device according to the present invention.
【図１１】図１０に示した正特性サーミスタの正面部分
断面図である。11 is a partial front sectional view of the positive temperature coefficient thermistor shown in FIG. 10;
【図１２】図１１のＡ１２ーＡ１２線上における側面部
分断面図である。FIG. 12 is a partial side sectional view taken along line A12-A12 in FIG. 11;
【図１３】図１１のＡ１３ーＡ１３線上における側面部
分断面図である。FIG. 13 is a partial side sectional view taken along line A13-A13 in FIG. 11;
【図１４】図１０に示した正特性サーミスタ装置の底面
図である。FIG. 14 is a bottom view of the positive temperature coefficient thermistor device shown in FIG.
【図１５】本考案に係る正特性サーミスタ装置を使用し
た消磁回路である。FIG. 15 is a demagnetizing circuit using the positive temperature coefficient thermistor device according to the present invention.
１ ケース ２、３ 正特性サーミスタ ４〜６ 端子 ４００ 金属板部材 ４１０ 第１の金属膜 ４２０ 第２の金属膜 DESCRIPTION OF SYMBOLS 1 Case 2, 3 Positive temperature coefficient thermistor 4-6 Terminal 400 Metal plate member 410 First metal film 420 Second metal film
Claims (4)
特性サーミスタ装置であって、 前記正特性サーミスタは、平板状素体の表面に電極を有
しており、 前記端子は、金属板部材で構成され、前記正特性サーミ
スタの前記電極に接触し、少なくとも接触部が第１の金
属膜と、第２の金属膜とを含んでおり、 前記第１の金属膜は、Ｎｉ膜であって前記金属板部材の
表面に付着されており、 前記第２の金属膜は、前記第１の金属膜を覆っており、
Ｓｎ膜またはＡｇ膜の少なくとも一種を含む 正特性サー
ミスタ装置。1. A positive temperature coefficient thermistor device having a positive temperature coefficient thermistor and a terminal, wherein said positive temperature coefficient thermistor has an electrode on a surface of a plate-like element body, and said terminal is a metal plate member. A first metal film and a second metal film at least in contact with the electrode of the positive temperature coefficient thermistor, wherein the first metal film is a Ni film, are attached to the surface of the metal plate, the second metal film covers the first metal film,
A positive temperature coefficient thermistor device including at least one of an Sn film and an Ag film .
以上である請求項１に記載の正特性サーミスタ装置。2. The first metal film has a thickness of 2.0 μm.
The positive temperature coefficient thermistor device according to claim 1, which is as described above.
それぞれが互いに熱結合されている請求項１に記載の正
特性サーミスタ装置。3. The thermistor according to claim 2, wherein the number of the positive characteristic thermistors is two.
2. The positive temperature coefficient thermistor device according to claim 1, wherein each is thermally coupled to each other.
極の一つが互いに重ねられており、 前記端子は３本備えられ、第１の端子が一方の正特性サ
ーミスタの電極に接触し、第２の端子が他方の正特性サ
ーミスタの電極に接触し、第３の端子が前記正特性サー
ミスタの互いに重ねられる電極間に配置されている請求
項３に記載の正特性サーミスタ装置。4. Each of the positive temperature coefficient thermistors has one of electrodes superimposed on each other, three terminals are provided, a first terminal is in contact with an electrode of one of the positive temperature coefficient thermistors, and a second terminal is provided. 4. The positive temperature coefficient thermistor device according to claim 3, wherein a terminal contacts an electrode of the other positive temperature coefficient thermistor, and a third terminal is disposed between mutually overlapping electrodes of the positive temperature coefficient thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992091293U JP2597366Y2 (en) | 1992-12-15 | 1992-12-15 | Positive characteristic thermistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992091293U JP2597366Y2 (en) | 1992-12-15 | 1992-12-15 | Positive characteristic thermistor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0652102U JPH0652102U (en) | 1994-07-15 |
| JP2597366Y2 true JP2597366Y2 (en) | 1999-07-05 |
Family
ID=14022427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1992091293U Expired - Lifetime JP2597366Y2 (en) | 1992-12-15 | 1992-12-15 | Positive characteristic thermistor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2597366Y2 (en) |
-
1992
- 1992-12-15 JP JP1992091293U patent/JP2597366Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0652102U (en) | 1994-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4862132A (en) | Bimetal switch | |
| KR100349780B1 (en) | Chip Thermistor | |
| JPH07153555A (en) | Positive characteristic thermistor heater and positive characteristic thermistor heater device using it | |
| JP2597366Y2 (en) | Positive characteristic thermistor device | |
| JP3119183B2 (en) | Components for degaussing circuit | |
| JPH08138906A (en) | Manufacture of positive temperature coefficient(ptc) thermistor device and heat detecting device | |
| US5263115A (en) | PTC electric heating element assembly | |
| JP2575400Y2 (en) | Thermistor | |
| JPH06267709A (en) | Positive temperature coefficient thermistor | |
| JP2511538B2 (en) | Semiconductor temperature sensor | |
| JPH09306317A (en) | Overvoltage-overcurrent protective device | |
| JPH10106803A (en) | Positive temperature coefficient thermistor for protection against overcurrent | |
| JPS64715Y2 (en) | ||
| JPS6015278Y2 (en) | heating element device | |
| JP2001044007A (en) | Thermistor element and thermistor using the same | |
| JPS601508Y2 (en) | Ceramic heater device | |
| JP2571990Y2 (en) | Positive characteristic thermistor device | |
| JPS61180589A (en) | Positive characteristic thermistor | |
| JPS6244481Y2 (en) | ||
| US2875297A (en) | Thermal devices | |
| JPS6010701A (en) | Positive temperature coefficient thermistor | |
| JP3037752U (en) | Degaussing current limiting device | |
| JPS6330158Y2 (en) | ||
| JPS60259076A (en) | Degaussing element comprising two elements | |
| JPH06283307A (en) | Thermistor and heater |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990420 |