JP2587658B2 - Manufacturing method of dispersion type EL element - Google Patents
Manufacturing method of dispersion type EL elementInfo
- Publication number
- JP2587658B2 JP2587658B2 JP62285171A JP28517187A JP2587658B2 JP 2587658 B2 JP2587658 B2 JP 2587658B2 JP 62285171 A JP62285171 A JP 62285171A JP 28517187 A JP28517187 A JP 28517187A JP 2587658 B2 JP2587658 B2 JP 2587658B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- luminance
- plasma
- life
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Luminescent Compositions (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 近年、液晶のバックライト、複写機の静電除去、車載
用面光源等としての用途が急増している薄く、かつ全面
均一な平面光源である分散型EL素子の重要な構成要素で
ある螢光体の高性能化に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) In recent years, thin and uniform flat light sources that are rapidly increasing in use as backlights for liquid crystals, static elimination of copying machines, surface light sources for vehicles, etc. It is concerned with improving the performance of a phosphor which is an important component of a dispersion type EL device.
(従来の技術) 分散型EL素子は螢光体粒子を高誘電体バインダーに分
散させた発光層とその両側に密着させた電極層(少なく
とも一方は透明電極)を基体構成とし、その両電極層に
交流電圧を印加することにより発光層の螢光体が発光す
るものである。この際、発光層の輝度は経時的に減衰す
る傾向を示す。特に吸湿による経時的減衰が大きいた
め、前記基体構成は防湿フィルム、ガラス板等防湿材料
で密封する等の方法が実施される。(Prior Art) A dispersion-type EL device has a light-emitting layer in which phosphor particles are dispersed in a high dielectric binder and electrode layers (at least one of which is a transparent electrode) adhered to both sides of the light-emitting layer, and has both electrode layers. The phosphor in the light emitting layer emits light when an AC voltage is applied to the phosphor. At this time, the luminance of the light emitting layer tends to decrease with time. In particular, since the time-dependent attenuation due to moisture absorption is large, a method of sealing the base structure with a moisture-proof material such as a moisture-proof film or a glass plate is used.
又,別に螢光体そのものの表面に窒化硅素、酸化硅素
等の薄膜で被覆処理することにより経時劣化を防ぐ方法
も提案されている。(特開58−150294号公報) 又,本発明者らは、先に(特開63−278990)みられる
ように窒素プラズマ中で処理することにより、長寿命化
の方法を提案したが、輝度の向上は達成されていない。Another method has been proposed in which the surface of the phosphor itself is coated with a thin film of silicon nitride, silicon oxide, or the like to prevent deterioration over time. (JP-A-58-150294) The inventors of the present invention have proposed a method for extending the life by treating in a nitrogen plasma as described earlier (JP-A-63-278990). Improvement has not been achieved.
(発明が解決しようとする問題点) しかしながら、前記の薄膜被覆処理,例えば化学気相
法(CVD法)で処理した螢光体を用いたEL素子でもその
寿命が充分でなく、あるいは寿命が延長されたとしても
輝度劣化がみられ、高輝度で且つ長寿命タイプの螢光体
を得ることができなかった。(Problems to be Solved by the Invention) However, even the EL device using the phosphor treated by the above-mentioned thin film coating treatment, for example, the chemical vapor deposition (CVD) method, does not have a sufficient life or its life is prolonged. Despite this, luminance degradation was observed, and a high-luminance and long-life type phosphor could not be obtained.
特に電子機器用面光源として用いる場合は、高い信頼
性と寿命が長く、かつ消費電力が少ないEL素子が求めら
れている。In particular, when used as a surface light source for electronic devices, there is a demand for an EL element having high reliability, long life, and low power consumption.
一般的に、蛍光体の高輝度化が達成されれば同一輝度
を発現させるための印加電圧の低電圧化が可能となり、
消費電力の低減、駆動回路の耐電圧負荷の低減が期待さ
れるので高い輝度と長寿命の蛍光体が求められている。In general, if higher luminance of the phosphor is achieved, it becomes possible to lower the applied voltage for expressing the same luminance,
Since reduction of power consumption and reduction of withstand voltage load of a driving circuit are expected, a phosphor having high luminance and long life is required.
(問題点を解決するための手段) 本発明者等は前記の要求に応えるため、螢光体の処理
方法について鋭意検討した結果、SF6含有ガスプラズマ
処理を実施、更に希望により熱処理を行うことにより螢
光体の寿命が著しく延長され、さらに未処理の螢光体と
比較し、同一輝度を得るための必要な印加電圧が低減さ
れることを見い出し本発明に至ったのである。即ち本発
明は硫化物系蛍光体粒子をSF6を必須成分とするプラズ
マガス中で処理した分散型EL素子用蛍光体を用いること
を特徴とした分散型EL素子の製造方法である。本発明に
おいては前記の処理をした後、そのまま又は、希望によ
り更に窒化硅素、酸化硅素等のパッシベーション薄膜を
被覆し、及び/又は次いで300〜800℃で熱処理すること
により更に性能を向上させることができる。(Means for Solving the Problems) In order to meet the above-mentioned demands, the present inventors have conducted intensive studies on the processing method of the phosphor, and as a result, have carried out a SF 6- containing gas plasma treatment and further performed a heat treatment as desired. As a result, the present invention has been found to extend the life of the phosphor significantly and to reduce the applied voltage required for obtaining the same luminance as compared with the untreated phosphor. That is, the present invention is a method for manufacturing a dispersed EL device, which comprises using a phosphor for a dispersed EL device in which sulfide-based phosphor particles are treated in a plasma gas containing SF 6 as an essential component. In the present invention, after the above-mentioned treatment, it is possible to further improve the performance by coating a passivation thin film such as silicon nitride, silicon oxide or the like as it is or as desired, and / or then performing a heat treatment at 300 to 800 ° C. it can.
本発明において螢光体とは分散型EL素子用硫化物系螢
光体粒子であり、硫化亜鉛、硫化ストロンチウムを主成
分とする粒子が例示される。In the present invention, the phosphor is sulfide-based phosphor particles for a dispersion-type EL element, and examples thereof include particles mainly composed of zinc sulfide and strontium sulfide.
又、本発明において用いられるプラズマガスは、SF6
が挙げられ、希望により窒化、アルゴン、ネオン、ヘリ
ウム等の不活性ガスで希釈してもよい。この際、SF6ガ
ス成分は1モル%以上であることが望ましい。1モル%
未満ではプラズマ処理効果が小さく、実用的でない。プ
ラズマ発生装置内に導入されるガス圧は0.01〜20Torrが
好ましく、中でも0.05〜5Torrにするのが更に好まし
い。又プラズマ発生電源は電圧300〜10,000Vの範囲内が
好ましい。The plasma gas used in the present invention is SF 6
And may be diluted with an inert gas such as nitriding, argon, neon, or helium if desired. At this time, the SF 6 gas component is desirably 1 mol% or more. 1 mol%
If it is less than 50%, the plasma processing effect is small and not practical. The gas pressure introduced into the plasma generator is preferably 0.01 to 20 Torr, more preferably 0.05 to 5 Torr. Further, the voltage of the plasma generation power supply is preferably in the range of 300 to 10,000 V.
又、処理条件は被処理物である螢光体の温度を室温〜
500℃の範囲とし上記の含SF6含有ガスプラズマ雰囲気中
で、1〜500分間処理をする。このようなプラズマ処理
を施すことにより、硫化物系発光体の輝度の半減期を2
倍以上に伸すことができる上に未処理で作製したEL素子
と同一輝度の発光を発現させるための印加電圧が15%以
上低減出来る。The processing conditions are such that the temperature of the phosphor to be processed is from room temperature to
The treatment is performed for 1 to 500 minutes in the above-mentioned SF 6 -containing gas plasma atmosphere at a temperature of 500 ° C. By performing such a plasma treatment, the half-life of the luminance of the sulfide-based light emitting body can be reduced by two.
In addition to being twice as large, the applied voltage for exhibiting the same luminance as that of the unprocessed EL device can be reduced by 15% or more.
本発明において前記のプラズマ処理を施した後、希望
によりパッシベーション薄膜を被覆することができる。
この方法は特に限定するものではないが、例えばプラズ
マCVD法、光CVD法あるいは、ゾル・ゲル法等の任意の方
法を選択することができる。In the present invention, after performing the above-described plasma treatment, a passivation thin film can be coated as desired.
Although this method is not particularly limited, an arbitrary method such as a plasma CVD method, a photo CVD method, or a sol-gel method can be selected.
その内、例えばプラズマCVD法の場合は、前記のプラ
ズマ処理方法におけるガス組成として、窒素ガスとシラ
ンガスとの混合ガスを用いることによって行うことがで
きる。Among them, for example, in the case of a plasma CVD method, it can be performed by using a mixed gas of a nitrogen gas and a silane gas as a gas composition in the above-described plasma processing method.
又、前記のプラズマ処理したもの、又は更にプラズマ
処理した後、パッシベーション薄膜を被覆したものの処
理時に生じた螢光体の欠陥部を修復するため、更に200
〜800℃、好ましくは300〜500℃の温度で熱処理するこ
とが好しい。この処理は空気中で行うことができる。こ
のような熱処理により螢光体を更に均質化でき、螢光体
の寿命を延長することができる。Further, in order to repair the defective portion of the phosphor generated during the processing of the above-mentioned plasma-processed product or after the plasma-processed one coated with the passivation thin film, a further 200
It is preferred that the heat treatment be carried out at a temperature of from 800 to 800C, preferably from 300 to 500C. This treatment can be performed in air. Such a heat treatment can further homogenize the phosphor and extend the life of the phosphor.
(実施例) 以下に実施例により本発明を具体的に説明するが、本
発明はこれらの例に限定されるものではない。(Examples) Hereinafter, the present invention will be described specifically with reference to examples, but the present invention is not limited to these examples.
尚、実施例において、螢光体の寿命の評価方法は以下
の方法によった。In the examples, the following methods were used to evaluate the life of the phosphor.
寿命評価方法 接着剤を塗布したアルミニウムシートに螢光体粉末を
多層になるように密に散布した後、接着剤に接していな
い粉末を除去して図2に示すように一層の粒子層を形成
しこの層の上に透明導電層(SnOx)を有するネサガラス
を導電層が螢光体粉末層に接するように載せ、更にその
上にガラス板を載せて評価用EL素子を構成した。この素
子を20℃,65%RHの室内におき、アルミニウムシート及
び透明導電層の間に印加電圧150〜300V、1kHzの交流電
源を接続し発光させ、輝度計で輝度の経時変化を測定し
た。なお発光層の厚み及び螢光体の種類により、上記要
領にて、作製した評価用EL素子の初輝度が、一定しない
ため初輝度が30cd/m2とならない場合は初輝度が30cd/m2
になるように印加電圧を調整して点燈せしめ、この条件
を固定した状態で連続点灯せしめ輝度の経時変化を測定
した。Lifetime evaluation method After the phosphor powder is densely sprayed on the adhesive-coated aluminum sheet so as to form a multilayer, the powder not in contact with the adhesive is removed to form a single particle layer as shown in FIG. placed as a transparent conductive layer on a layer of Sico (S n O x) conductor layer Nesa glass having the contact with the phosphor powder layer was constructed for evaluation EL element further put a glass plate on it. The device was placed in a room at 20 ° C. and 65% RH, and an alternating current power supply of 150 kHz to 300 V and 1 kHz was connected between the aluminum sheet and the transparent conductive layer to emit light, and the change over time in luminance was measured with a luminance meter. Note the type of thickness and phosphor emitting layer, in the above manner, the first luminance evaluation EL element manufactured is first luminance since no constant 30 cd / m 2 and if not has first luminance 30 cd / m 2
The applied voltage was adjusted so as to satisfy the above condition, and the lamp was turned on. The lamp was continuously turned on with the conditions fixed, and the change over time in luminance was measured.
比較例1 改良型市販のエレクトロルミネッセンス用硫化亜鉛を
主成分とする螢光体粒子を用い、前記の処理を行なわな
いでそのまま寿命評価方法の方法に従い輝度を測定した
ところ、1kHz220Vでの初輝度は30cd/m2であった。この
駆動条件のまま12時間連続点燈した後の輝度は56%であ
った。Comparative Example 1 The luminance was measured in accordance with the method of the lifetime evaluation method without using the above-mentioned treatment, using the phosphor particles containing zinc sulfide for electroluminescence as a main component of the improved commercial type. It was 30 cd / m 2 . The luminance after continuous lighting for 12 hours under these driving conditions was 56%.
実施例1 図1に示すようなプラズマCVD装置のチャンバー内を
ロータリーポンプで排気しながら内圧が0.05Torrになっ
た後、装置内のコーン下部より、6フッ化硫黄(SF6)
を供給し、内圧が0.1Torr程度になるようSF6の供給速度
を調節し、このSF6ガス流によって、あらかじめコーン
内部にセットされていた比較例1で用いたものと同じエ
レクトロルミネッセンス用硫化亜鉛5gをコーン内部で浮
遊させた。さらにコーン上部から加熱ランプによって粉
体を約300℃に加熱しながら、コーン中央のコイルに高
周波電源により陽極電圧1kV周波数13.56MHzの高周波電
圧を印加し、フッ素系化合物のプラズマを発生させ、プ
ラズマ処理を60分間行なった。上記方法にて60分間プラ
ズマ処理をした螢光体を前記の寿命評価方法にて、寿命
特性を評価したところ12Hr後の輝度の劣化は14%であっ
た。なお周波数1kHzで30cd/m2の初期発光輝度を得るた
めに印加する電圧は180Vで充分であった。Example 1 After evacuation of the inside of a chamber of a plasma CVD apparatus as shown in FIG. 1 with a rotary pump and the internal pressure became 0.05 Torr, sulfur hexafluoride (SF 6 ) was supplied from the lower part of the cone in the apparatus.
And the feed rate of SF 6 was adjusted so that the internal pressure was about 0.1 Torr. By this SF 6 gas flow, the same zinc sulfide for electroluminescence as that used in Comparative Example 1 previously set inside the cone was used. 5 g were suspended inside the corn. Furthermore, while heating the powder from the upper part of the cone to about 300 ° C with a heating lamp, a high frequency voltage of 1 kV anode voltage and 13.56 MHz frequency is applied to the coil in the center of the cone by a high frequency power source to generate plasma of fluorine-based compound, and plasma treatment For 60 minutes. When the life characteristics of the phosphor subjected to the plasma treatment by the above method for 60 minutes were evaluated by the life evaluation method described above, the deterioration of luminance after 12 hours was 14%. A voltage of 180 V was sufficient to obtain an initial luminance of 30 cd / m 2 at a frequency of 1 kHz.
又、上記のようにして処理された螢光体についてX線
光電子分光装置にて分析したところ、フッ素原子の1S軌
道の結合エネルギーを示すと思われるピークが686eV付
近に観察された。この事からフッ素原子が螢光体の少く
とも表面層に取り込まれていることが推定される。Further, when the phosphor treated as described above was analyzed by an X-ray photoelectron spectrometer, a peak which seems to indicate the binding energy of the fluorine atom in the 1S orbit was observed at around 686 eV. From this fact, it is presumed that fluorine atoms are incorporated in at least the surface layer of the phosphor.
比較例2 コーン下部より供給するガスとしてSF6の代りに窒素
ガスを用いた他は実施例1全く同じようにしてプラズマ
処理を行なった。このようにして得られた螢光体を前記
の寿命評価方法によって寿命特性を評価したところ、12
Hr後の輝度の劣化は14であった。なお周波数1kHzで30cd
/m2の初輝度を得るために印加する電圧は230Vであっ
た。Except that nitrogen gas was used in place of SF 6 as a gas supplied from the Comparative Example 2 Corn lower drove plasma treatment in the Example 1 exactly as. The life characteristics of the thus obtained phosphor were evaluated by the life evaluation method described above.
The luminance degradation after Hr was 14. 30 cd at 1 kHz frequency
The voltage applied to obtain an initial luminance of / m 2 was 230 V.
実施例2−10 実施例1の方法において装置内圧力、雰囲気ガス組
成、プラズマ発生用荷電圧(周波数は13.56MHz)、処理
時間の条件を表1のように変えた他は実施例1と同じよ
うにして螢光体を処理した。得られた螢光体について前
記の寿命評価方法により、寿命特性を測定したところ12
Hr後の輝度の劣化及び周波数1kHzでの初輝度を30cd/m2
に保つために必要な印加電圧はそれぞれ表1に示したと
おりであり、比較例に比べ小さいものであった。Example 2-10 Same as Example 1 except that the conditions of the apparatus pressure, atmosphere gas composition, plasma generation charge voltage (frequency is 13.56 MHz) and processing time were changed as shown in Table 1 in the method of Example 1 The phosphor was processed as described above. The life characteristics of the obtained phosphor were measured by the life evaluation method described above.
Degradation of luminance after Hr and initial luminance at a frequency of 1 kHz is 30 cd / m 2
The applied voltages required to maintain the values were as shown in Table 1, and were smaller than those of the comparative examples.
参考例1 図1に示すようなプラズマ発生装置にて、0.1〜0.5To
rrの減圧下、シランガスを3cc/min、窒素ガスを15cc/mi
nという流量比で供給しながら1200V、13.56MHzの高周波
電圧を印加して発生させた窒素プラズマ中で実施例1と
同じ条件で得られたSF6プラズマ処理済の螢光体5gを赤
外線ヒーターにて200℃程度になるように加熱しながら6
0分間処理をした。得られた螢光体表面のSi3N4の膜厚
は、ガラス板モニターで測定したところ0.05μであっ
た。又、この粒子について前記の寿命評価方法により寿
命を測定したところ12Hr後の輝度の減衰は12%であっ
た。Reference Example 1 With a plasma generator as shown in FIG.
Under reduced pressure of rr, silane gas 3cc / min, nitrogen gas 15cc / mi
In a nitrogen plasma generated by applying a high frequency voltage of 1200 V and 13.56 MHz while supplying at a flow rate of n, 5 g of SF 6 plasma-treated phosphor obtained under the same conditions as in Example 1 was applied to an infrared heater. While heating to about 200 ° C.
Treated for 0 minutes. The film thickness of Si 3 N 4 on the surface of the obtained phosphor was 0.05 μ as measured by a glass plate monitor. The life of the particles was measured by the life evaluation method described above, and the luminance decay after 12 hours was 12%.
また周波数1kHzで初輝度30cd/m2にて発光させるため
に必要な印加電圧は200Vであった。The applied voltage required to emit light at a frequency of 1 kHz and an initial luminance of 30 cd / m 2 was 200 V.
参考例2 実施例1で得られた螢光体を500℃で30分間熱処理し
た後、前記の輝度評価方法により寿命特性を測定した結
果、12Hr後の輝度劣化は14%であった。又、周波数1kHz
で初輝度30cd/m2にて発光させるために必要な印加電圧
は、170Vであった。Reference Example 2 After the phosphor obtained in Example 1 was heat-treated at 500 ° C. for 30 minutes, the life characteristics were measured by the above-described luminance evaluation method. As a result, the luminance deterioration after 12 hours was 14%. Also, frequency 1kHz
The applied voltage required to emit light at an initial luminance of 30 cd / m 2 was 170 V.
参考例3 参考例1で得られた螢光体を500℃で45分間熱処理し
た。処理後の螢光体について前記の輝度評価方法により
寿命特性を測定した結果、12Hr後の輝度劣化は12%であ
った。又、周波数1kHzで初輝度30cd/m2にて発光させる
ために必要な印加電圧は、190Vであった。Reference Example 3 The phosphor obtained in Reference Example 1 was heat-treated at 500 ° C. for 45 minutes. As a result of measuring the life characteristics of the phosphor after the treatment by the above-described luminance evaluation method, the luminance degradation after 12 hours was 12%. The applied voltage required to emit light at a frequency of 1 kHz and an initial luminance of 30 cd / m 2 was 190 V.
(発明の効果) 分散型EL素子に用いる硫化物系螢光体をあらかじめ、
SF6等のフッ素系化合物ガスを必須成分とするプラズマ
中で処理し、その後、更に希望によりパッシベーション
により窒化ケイ素等の薄膜を形成し、及び/又は更に20
0〜800℃の熱処理により発光体の輝度寿命の延長と、同
一輝度を得るための印加電圧の低減をすることが出来、
この螢光体を用いて製造した分散型EL素子の寿命と駆動
電圧を低下させることが出来る。(Effect of the Invention) The sulfide phosphor used for the dispersion type EL device is previously prepared.
Treating in a plasma containing a fluorine compound gas such as SF 6 as an essential component, and then forming a thin film of silicon nitride or the like by passivation if desired, and / or
The heat treatment at 0 to 800 ° C can extend the luminance life of the luminous body and reduce the applied voltage to obtain the same luminance.
The life and driving voltage of the dispersion type EL device manufactured using this phosphor can be reduced.
第1図は実施例で用いたプラズマ処理装置の説明図であ
る。第2図は実施例で用いた発光体の輝度測定方法に用
いる評価用EL素子の説明図である。 1……高周波コイル 2……加熱ランプ 3……チャンバー 4……粉体 5……反応ガス供給バルブ 6……排気管バルブ 7……ロータリーポンプ 8……高周波電源装置 9……ガラス板 10……電極 11……蛍光物質 12……接着剤 13……アルミニウムシート 14……発光電源FIG. 1 is an explanatory view of a plasma processing apparatus used in the embodiment. FIG. 2 is an explanatory view of an evaluation EL element used in a method for measuring luminance of a luminous body used in Examples. DESCRIPTION OF SYMBOLS 1 ... High frequency coil 2 ... Heating lamp 3 ... Chamber 4 ... Powder 5 ... Reaction gas supply valve 6 ... Exhaust pipe valve 7 ... Rotary pump 8 ... High frequency power supply 9 ... Glass plate 10 ... ... Electrode 11 ... Fluorescent substance 12 ... Adhesive 13 ... Aluminum sheet 14 ... Emission power supply
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H05B 33/14 H05B 33/14 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H05B 33/14 H05B 33/14
Claims (1)
るプラズマガス中で処理した分散型EL素子用蛍光体を用
いることを特徴とした分散型EL素子の製造方法。1. A method for producing a dispersion-type EL element characterized by using a sulfide fluorescent material-dispersed particles were treated with a plasma gas to the SF 6 essential components EL device phosphor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62285171A JP2587658B2 (en) | 1987-11-13 | 1987-11-13 | Manufacturing method of dispersion type EL element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62285171A JP2587658B2 (en) | 1987-11-13 | 1987-11-13 | Manufacturing method of dispersion type EL element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01129090A JPH01129090A (en) | 1989-05-22 |
JP2587658B2 true JP2587658B2 (en) | 1997-03-05 |
Family
ID=17688020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62285171A Expired - Fee Related JP2587658B2 (en) | 1987-11-13 | 1987-11-13 | Manufacturing method of dispersion type EL element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2587658B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200417594A (en) * | 2002-10-07 | 2004-09-16 | Matsushita Electric Ind Co Ltd | Phosphor and method of treating phosphor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59936B2 (en) * | 1976-06-11 | 1984-01-09 | 松下電器産業株式会社 | Manufacturing method of luminescent screen |
JPS5740586A (en) * | 1980-08-22 | 1982-03-06 | Toshiba Corp | Treatment of fluorescent substance and its device |
JPS6067585A (en) * | 1983-09-22 | 1985-04-17 | Matsushita Electric Ind Co Ltd | Production of zinc sulfide fluorescent substance |
-
1987
- 1987-11-13 JP JP62285171A patent/JP2587658B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH01129090A (en) | 1989-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5856009A (en) | Coating for phosphor particles | |
EP1034233B1 (en) | Diamond-like carbon coatings on inorganic phosphors | |
JP3152505B2 (en) | High pressure glow discharge lamp | |
US2838715A (en) | Electroluminescent lamp | |
GB2202087A (en) | Electroluminescent display with interlayer for improved forming | |
JP2009524735A (en) | Moisture-resistant electroluminescent phosphor having high initial luminance and method for producing the same | |
JP2587658B2 (en) | Manufacturing method of dispersion type EL element | |
JPH06299146A (en) | Production of silica-coated fluorescent material | |
JP2004018856A (en) | White light emitting electroluminescent phosphor having longevity | |
US3044902A (en) | Method of forming films of electro-luminescent phosphor | |
Talbot | Electrophoretic deposition of phosphors for information displays and solid state lighting | |
JP2000311869A (en) | Surface modifying method for ito thin film | |
JPS587477A (en) | Light emitting element in electrical field | |
JPS63278990A (en) | Production of phosphor | |
US2819420A (en) | Electroluminescent cell | |
JPH06184533A (en) | Production of coated stimulable phosphor | |
JPH0485388A (en) | Organic electroluminescent element | |
Chadha | Powder electroluminescence | |
US2980816A (en) | Electroluminescent lamp | |
JPH0238482A (en) | Coated electroluminescent phosphor | |
US2866118A (en) | Electroluminescent lamp | |
RU2073059C1 (en) | Method of treating zinc oxide luminiphores | |
JPH06267697A (en) | Generating method for plasma and its device and manufacture of coating powder | |
JPH04112489A (en) | Manufacture of electroluminescence phosphor | |
JP2003336046A (en) | Surface treatment method for inorganic phosphor and display element using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |