JP2582095B2 - Manufacturing method of diamond heat sink - Google Patents
Manufacturing method of diamond heat sinkInfo
- Publication number
- JP2582095B2 JP2582095B2 JP62290312A JP29031287A JP2582095B2 JP 2582095 B2 JP2582095 B2 JP 2582095B2 JP 62290312 A JP62290312 A JP 62290312A JP 29031287 A JP29031287 A JP 29031287A JP 2582095 B2 JP2582095 B2 JP 2582095B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- composition
- evaporation
- evaporation source
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は合金の物理蒸着法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for physical vapor deposition of an alloy.
［従来の技術］ 蒸気圧の異なる２種以上の元素で構成される合金を真
空蒸着法、スパッター法またはイオンプレーティング法
などの物理蒸着法（Physical Vapor Deposition:PVD）
の手段によって基材表面に蒸着させる場合、従来は目的
組成そのままの合金が蒸発源に用いられて来た。通常物
理蒸着法においては予め蒸発源内の不純物を除去するた
めに、蒸発源を一定時間加熱溶融し、いわゆるガス抜き
を行なうが、この際に蒸気圧の異なる合金元素のうち蒸
発しやすい元素が優先的に蒸発して蒸発源に残留する合
金組成は変化することになる。したがって、基材表面に
形成される合金被膜の組成は目的組成とは異なるものと
なり均一組成のものも得られなくなる。そこで、このよ
うな欠点を避けるために、たとえば特開昭61−51951号
公報のように、共晶合金の共晶比よりも蒸発しやすい元
素の組成比を大きくした合金を蒸発源とする方法が開示
されているが、このような方法ではAuSn共晶合金の場
合、検量線を求めて、ガス出し時間とSnの量とを正確に
実施しなければ高価な金を有する合金の全体が使用でき
なくなってしまうので、経済的に有利な方法とは決して
言えない。[Prior Art] An alloy composed of two or more elements having different vapor pressures is subjected to physical vapor deposition (PVD) such as vacuum deposition, sputtering, or ion plating.
In the case of vapor deposition on the surface of a base material by the above-mentioned means, conventionally, an alloy having a desired composition as it is has been used as an evaporation source. Usually, in the physical vapor deposition method, in order to remove impurities in the evaporation source in advance, the evaporation source is heated and melted for a certain period of time, and so-called degassing is performed. The composition of the alloy which is evaporated and remains in the evaporation source will change. Therefore, the composition of the alloy film formed on the surface of the base material is different from the target composition, and a uniform composition cannot be obtained. Therefore, in order to avoid such a drawback, for example, as disclosed in JP-A-61-51951, a method in which an alloy in which the composition ratio of elements that evaporate more easily than the eutectic ratio of the eutectic alloy is increased is used as the evaporation source. However, in such a method, in the case of an AuSn eutectic alloy, a calibration curve is obtained, and if the degassing time and the amount of Sn are not accurately performed, the entire alloy having expensive gold is used. It is not an economically viable method because it will not be possible.
［発明が解決しようとする問題点］ 以上述べたように、従来の技術においては、基材表面
に目的とする合金組成の被膜を形成するために必要な蒸
発源の合金組成の調整を簡便でしかも経済的に行なう方
法は未だ見出されていないという問題があった。[Problems to be Solved by the Invention] As described above, in the conventional technique, the adjustment of the alloy composition of the evaporation source necessary for forming a film of the target alloy composition on the surface of the base material can be easily performed. Moreover, there has been a problem that an economical method has not been found yet.
また、ある組成の合金を物理蒸着する場合、蒸発し易
い金属が先に蒸発するので、従来の技術では初期の蒸発
膜は蒸発し易い金属が多くなり、その後、蒸発し難い金
属が多くなっている。即ち、膜の厚み方向に組成の傾き
が発生し、均一組成の合金膜を得ることができない。Also, when an alloy having a certain composition is physically vapor-deposited, the easily vaporized metal evaporates first, so that in the conventional technology, the initial vaporized film has more easily vaporized metal, and thereafter, more easily vaporized metal has increased. I have. That is, a composition gradient occurs in the thickness direction of the film, and an alloy film having a uniform composition cannot be obtained.
［問題を解決するための手段］ 上記の問題点を解決するために、この発明は目的組成
である共晶組成のAuSn合金と、その合金を構成する元素
単体のうちで蒸発しやすいSnとを二つ以上の別の蒸発源
から、それぞれの蒸発源からの蒸発速度を膜厚モニター
で個別に制御しながら同時に蒸発させ共晶組成のAuSn合
金をダイヤモンドヒートシンク表面に形成するという手
段を採用したものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention relates to an AuSn alloy having a eutectic composition as a target composition and Sn which is likely to evaporate among elemental elements constituting the alloy. A method that employs a means of simultaneously evaporating from two or more different evaporation sources while individually controlling the evaporation rate from each evaporation source with a film thickness monitor and forming a eutectic AuSn alloy on the surface of the diamond heat sink. It is.
［作用］ 二つ以上の別の蒸発源のうちの一つに目的組成である
共晶組成の合金を用い、ほかの蒸発源に蒸発しやすい金
属元素であるSnを用いることによって、目的組成の合金
から消失する蒸発しやすい金属元素をほかの蒸発源から
補給する。この補給は、実際に蒸発する合金、金属の量
を検出し、それぞれの蒸発源からの蒸発速度を制御する
ことにより、蒸発し易い金属の消失量に見合う量で調整
でき、高精度の組成制御が可能になって基材表面に形成
される合金被膜の組成を均一でしかも目的組成に合致さ
せることができる。[Function] By using an alloy having a eutectic composition as a target composition as one of two or more different evaporation sources and using Sn, which is a metal element that is easily evaporated, as another evaporation source, Replenish easily evaporated metal elements that disappear from the alloy from other sources. This replenishment can be controlled by detecting the amounts of alloys and metals that actually evaporate, and controlling the evaporation rate from each evaporation source, so that the amount can be adjusted to an amount that corresponds to the amount of easily evaporated metals. This makes it possible to make the composition of the alloy film formed on the surface of the base material uniform and to match the desired composition.
なお、この発明の合金の物理蒸発法を実施するにあた
っては、目的組成の合金の量を、基材表面に形成する合
金蒸発膜に必要な量以上に過剰に投入すると、蒸着処理
終了後に、蒸発源に残った合金の組成は、目的合金の組
成とは大きく変わるため、再使用は不可能となる。した
がって、蒸発源の一つに使用する目的組成の合金量は、
基材表面に形成される合金被膜に見合う量とすることが
望ましく、過剰な量とすることは経済的に好ましくな
い。In carrying out the physical vaporization method of the alloy of the present invention, if the amount of the alloy of the target composition is excessively added to the amount necessary for the alloy evaporation film formed on the surface of the base material, the evaporation after the end of the vapor deposition process is performed. The composition of the alloy remaining in the source is significantly different from the composition of the target alloy, so that it cannot be reused. Therefore, the amount of alloy of the target composition used for one of the evaporation sources,
It is desirable that the amount is suitable for the alloy film formed on the base material surface, and an excessive amount is not economically preferable.
この発明の方法によれば、蒸発し易い金属元素の他の
蒸発源からの補給量をコントロールして蒸発し易い金属
元素の蒸発量と蒸発し難い金属元素の蒸発量の比を一定
に保つことができるので、目的とする組成でしかもその
組成に傾斜の無い合金の被膜を正確に得ることができ、
したがって、融点の安定したろう材（蒸着されたろう材
の膜）を得ることができる。さらに、低温で蒸発しやす
い錫Snを成分とするような合金の蒸着に際しては、この
発明の方法は特に効果的であるといえる。したがって、
目的組成の合金が金Auと錫Snとの共晶組成であり、蒸発
しやすい金属がSnであるような場合には、この発明の方
法は格好の方法といえる。以下、具体的な実施例を示
す。According to the method of the present invention, the replenishment amount of the easily evaporated metal element from another evaporation source is controlled to maintain a constant ratio of the evaporation amount of the easily evaporated metal element to the evaporation amount of the hardly evaporated metal element. Therefore, it is possible to accurately obtain a coating of an alloy having a desired composition and having no gradient in the composition,
Therefore, a brazing material having a stable melting point (a film of a deposited brazing material) can be obtained. Further, it can be said that the method of the present invention is particularly effective when depositing an alloy containing tin Sn, which easily evaporates at a low temperature. Therefore,
When the alloy having the desired composition is a eutectic composition of gold Au and tin Sn, and the easily vaporizable metal is Sn, the method of the present invention can be said to be a suitable method. Hereinafter, specific examples will be described.
［実施例］ 実施例１ AuSn共晶組成（Sn20重量％）の合金被膜をダイヤモン
ドヒートシンク（1mm×1mm×0.3mmの単結晶）表面に形
成するために、共晶組成のAuSn合金10gを図に示すよう
な蒸着装置の蒸発源１に、また蒸発しやすい金属として
Sn10gを蒸発源２に用いて、１分間ガス抜きを行なった
後、シャッター３を開いて蒸着を始めた。蒸発源１に用
いたAuSn共晶合金の被蒸着体４への蒸発速度が毎秒20Å
で、蒸発源２のSnの蒸発速度が毎秒４〜６Åとなるよう
に、それぞれ膜厚モニター５および６によって制御しな
がら蒸発源１および２をそれぞれ加熱し、蒸着膜厚が３
μｍになるまで同時蒸着を実施した。被蒸着体４の表面
に形成された蒸着膜の組成はSn20重量％で目的とするAu
Snの共晶組成と同じであった。なお、蒸発源２のSnの消
費量は1.1gであった。[Example] Example 1 In order to form an alloy film of AuSn eutectic composition (Sn 20% by weight) on the surface of a diamond heat sink (single crystal of 1 mm x 1 mm x 0.3 mm), 10 g of an AuSn alloy having an eutectic composition was prepared as shown in the figure. As shown in the evaporation source 1 of the vapor deposition device,
After degassing for 1 minute using 10 g of Sn as the evaporation source 2, the shutter 3 was opened to start vapor deposition. The evaporation rate of the AuSn eutectic alloy used for the evaporation source 1 to the object to be deposited 4 is 20 ° per second.
Then, the evaporation sources 1 and 2 are heated while being controlled by the film thickness monitors 5 and 6, respectively, so that the evaporation rate of Sn of the evaporation source 2 is 4 to 6 ° per second.
Simultaneous vapor deposition was performed until the thickness reached μm. The composition of the deposited film formed on the surface of the deposition target 4 is Sn 20% by weight and the target Au is
It was the same as the eutectic composition of Sn. In addition, the consumption of Sn of the evaporation source 2 was 1.1 g.
［効果］ 以上述べたように、この発明の合金の物理蒸着法に従
って、目的成分組成の合金を蒸発源として蒸発させると
同時に蒸発しやすい元素を別の蒸発源から蒸発速度を制
御しながら蒸発させると、蒸発合金から消失した金属元
素が精度良く補われて、基材面上に所望の成分組成の合
金被膜が得られ、その操作は簡便で被膜組成も従来法で
は観られない正確さが認められた。したがって、この発
明の意義はきわめて大きい。[Effects] As described above, according to the physical vapor deposition method for an alloy of the present invention, an alloy having a target component composition is evaporated as an evaporation source, and at the same time, easily vaporizable elements are evaporated from another evaporation source while controlling the evaporation rate. In addition, the metal element disappeared from the vaporized alloy is accurately compensated, and an alloy film having the desired composition is obtained on the base material surface. The operation is simple, and the film composition is recognized as accurate which cannot be seen by the conventional method. Was done. Therefore, the significance of the present invention is extremely large.
図はこの発明の合金の物理蒸着法に使用する装置の概要
を例示する装置図である。 １、２……蒸発源、３……シャッター ４……被蒸着体、５、６……膜厚モニター。The figure is an apparatus diagram illustrating the outline of the apparatus used for the physical vapor deposition method of the alloy of the present invention. 1, 2 ... evaporation source, 3 ... shutter 4 ... body to be deposited, 5, 6 ... film thickness monitor.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−43875（ＪＰ，Ａ) 特開 昭59−43876（ＪＰ，Ａ) 特開 昭57−39170（ＪＰ，Ａ) 特開 昭61−82347（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-59-43875 (JP, A) JP-A-59-43876 (JP, A) JP-A-57-39170 (JP, A) JP-A-61-43170 82347 (JP, A)
Claims (1)
の合金を構成する元素単体のうちで蒸発しやすいSnと
を、二つ以上の別の蒸発源から、それぞれの蒸発源から
の蒸発速度を膜厚モニターで個別に制御しながら同時に
蒸発させ、共晶組成のAuSn合金をダイヤモンドヒートシ
ンク表面に形成することを特徴とするダイヤモンドヒー
トシンクの製造法。An AuSn alloy having a eutectic composition as a target composition and Sn which is easily evaporated among elemental elements constituting the alloy are separated from two or more different evaporation sources from each evaporation source. A method for producing a diamond heat sink, comprising simultaneously evaporating while controlling the evaporation rate individually with a film thickness monitor to form an AuSn alloy having a eutectic composition on the surface of the diamond heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290312A JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290312A JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01129961A JPH01129961A (en) | 1989-05-23 |
| JP2582095B2 true JP2582095B2 (en) | 1997-02-19 |
Family
ID=17754473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62290312A Expired - Lifetime JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2582095B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943876A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source |
| JPS5943875A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source and its using method |
-
1987
- 1987-11-16 JP JP62290312A patent/JP2582095B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01129961A (en) | 1989-05-23 |
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