JP2559536B2 - Method of manufacturing light emitting device - Google Patents
Method of manufacturing light emitting deviceInfo
- Publication number
- JP2559536B2 JP2559536B2 JP41119890A JP41119890A JP2559536B2 JP 2559536 B2 JP2559536 B2 JP 2559536B2 JP 41119890 A JP41119890 A JP 41119890A JP 41119890 A JP41119890 A JP 41119890A JP 2559536 B2 JP2559536 B2 JP 2559536B2
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- Prior art keywords
- protective film
- film
- weight
- algaas
- light emitting
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＡｌＧａＡｓチップ表
面の保護膜の形成により輝度の劣化を有効に防止するこ
とができるようにした発光素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a light emitting device capable of effectively preventing deterioration of brightness by forming a protective film on the surface of an AlGaAs chip.
【０００２】[0002]
【従来の技術】ｐｎ接合を有する従来のＡｌＧａＡｓ発
光素子のランプＬ’は、第２図に示すごとくＡｌＧａＡ
ｓチップ２’のｎ層４側にはｎ電極６及びｐ層８側には
ｐ電極１０を設け、エポキシ樹脂でモールド１２した構
造が一般に知られている。エポキシ樹脂は一般に吸湿性
で防湿効果に乏しいため、大気中の水分がモールド１２
内に侵入し、ＡｌＧａＡｓ中のＡｌと反応して水酸化物
の白濁膜１４がＡｌＧａＡｓチップ２’の表面に形成さ
れる。この水酸化アルミニウムの白濁膜１４のために、
光取り出し効率が低下し、ＡｌＧａＡｓＬＥＤの輝度が
低下するという問題が発生していた。2. Description of the Related Art A lamp L'of a conventional AlGaAs light emitting device having a pn junction has an AlGaA structure as shown in FIG.
A structure in which an n electrode 6 is provided on the n layer 4 side of the s chip 2 ′ and a p electrode 10 is provided on the p layer 8 side and a mold 12 is molded with an epoxy resin is generally known. Epoxy resins are generally hygroscopic and have a poor moisture-proof effect, so that moisture in the atmosphere will
It penetrates into the inside and reacts with Al in AlGaAs to form a cloudy film 14 of hydroxide on the surface of the AlGaAs chip 2 '. Due to the white turbid film 14 of aluminum hydroxide,
There has been a problem that the light extraction efficiency is lowered and the brightness of the AlGaAs LED is lowered.
【０００３】一方、このＡｌＧａＡｓ混晶は、アンモニ
アと過酸化水素を含む水溶液に浸水処理をすることによ
って酸化皮膜を形成し、それを保護膜とし結晶の安定化
を計る技術が報告されている（第４２回応用物理学会予
行集、６００頁、９ａ−Ｄ−３，１９８１，及び第４４
回応用物理学会予行集、４８５頁、２８ａ−Ｈ−３、１
９８３）。On the other hand, it has been reported that this AlGaAs mixed crystal forms an oxide film by subjecting it to an aqueous solution containing ammonia and hydrogen peroxide to form an oxide film, and uses it as a protective film to stabilize the crystal ( Proceedings of the 42nd Japan Society of Applied Physics, page 600, 9a-D-3, 1981, and 44th
Proceedings of the Japan Society of Applied Physics, 485 pages, 28a-H-3, 1
983).
【０００４】後者の報文においては、好適なＨ2 Ｏ2 ／
ＮＨ4 ＯＨ比が２０、つまり１．５重量％のアンモニア
と３０重量％の過酸化水素を含む水溶液として、その場
合の膜厚と形成時間について開示し、更に熱処理によっ
て保護膜の厚さが約１／２に減少することが教示されて
いる。しかしこの方法では、膜形成後にさらに熱処理工
程を必要としているため工程が複雑となり生産性を低下
させる原因となる。In the latter report, the preferred H 2 O 2 /
An NH 4 OH ratio of 20, that is, an aqueous solution containing 1.5% by weight of ammonia and 30% by weight of hydrogen peroxide, the film thickness and forming time in that case are disclosed. It is taught to reduce it by half. However, this method requires a heat treatment step after the film is formed, which complicates the process and reduces productivity.
【０００５】また、このような開示技術にも関わらず、
ＡｌＧａＡｓ発光素子の空気中の湿気に起因する輝度の
低下問題は依然として完全には解消されていない。In addition, in spite of such disclosed technology,
The problem of a decrease in brightness of the AlGaAs light emitting device due to moisture in the air has not been completely solved.
【０００６】[0006]
【発明が解決しようとする課題】本発明者は、上記した
従来技術の問題点を解決するために鋭意研究を重ねた結
果、本発明を完成したものである。The present inventor has completed the present invention as a result of intensive studies to solve the above-mentioned problems of the prior art.
【０００７】本発明は、ＡｌＧａＡｓチップ表面へのひ
び割れの無い、緻密かつ均質な保護膜の形成により光取
り出し効率の低下を防止し、輝度の劣化を有効に防止す
ることができると共に、膜形成後の熱処理工程を必要と
しないため生産性を向上させることができるようにした
発光素子の製造方法を提供することを目的とする。According to the present invention, the formation of a dense and uniform protective film without cracks on the surface of an AlGaAs chip can prevent the reduction of the light extraction efficiency and effectively prevent the deterioration of the brightness. It is an object of the present invention to provide a method for manufacturing a light emitting device, which can improve productivity because it does not require the heat treatment step.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に、本発明の発光素子の製造方法においては、ｐｎ接合
を有するＡｌＧａＡｓチップを、アンモニアと過酸化水
素を含む水溶液中に浸漬して該チップの表面に保護膜を
形成する方法であって、前記水溶液中のアンモニア濃度
を０．３〜０．６重量％とし、過酸化水素濃度を２５〜
３５重量％とすることにより、保護膜形成後の熱処理を
行わずに、ＡｌＧａＡｓチップ表面へ保護膜を形成する
ようにした。In order to solve the above problems, in the method for manufacturing a light emitting device according to the present invention, an AlGaAs chip having a pn junction is replaced with ammonia and peroxide water.
Dip it in an aqueous solution containing oxygen to form a protective film on the surface of the chip.
A method of forming, wherein the concentration of ammonia in the aqueous solution is
Of 0.3 to 0.6% by weight, and the hydrogen peroxide concentration of 25 to
By setting it to 35% by weight, the heat treatment after the protective film is formed
Instead, the protective film was formed on the surface of the AlGaAs chip .
【０００９】また、前記ＡｌＧａＡｓチップの表面に１
０００Å以上の厚さの酸化アルミニウムの保護膜を形成
するようにすればより好ましい。Further, 1 is formed on the surface of the AlGaAs chip.
It is more preferable to form a protective film of aluminum oxide having a thickness of 000Å or more.
【００２０】[0020]
【作用】本発明においては、ＡｌＧａＡｓチップの表面
へ単に酸化アルミニウムの皮膜を形成するだけでは足り
ず、ひび割れの無い、緻密（熱処理によって膜厚が急激
に減少しない）かつ均質な保護膜を形成することが必要
である。このような良好な酸化アルミニウム皮膜を形成
することにより、初めて熱処理工程を必要とせずＡｌＧ
ａＡｓ発光素子光取り出し効率の低下を防止し、輝度の
劣化を有効に防止するという本発明の目的を達成するこ
とができる。In the present invention, it is not enough to simply form a film of aluminum oxide on the surface of the AlGaAs chip, and it is possible to form a dense (diffuse film thickness does not sharply decrease by heat treatment) and uniform protective film without cracks. It is necessary. By forming such a good aluminum oxide film, the heat treatment process is not required for the first time and AlG
It is possible to achieve the object of the present invention to prevent the deterioration of the light extraction efficiency of the aAs light emitting device and effectively prevent the deterioration of the luminance.
【００２１】[0021]
【実施例】本発明によって製造したＡｌＧａＡｓ発光素
子ランプＬを第１図に示した。第１図において第２図と
同様の部材は同一の符号で示す。EXAMPLE An AlGaAs light emitting element lamp L manufactured according to the present invention is shown in FIG. In FIG. 1, the same members as those in FIG. 2 are designated by the same reference numerals.
【００２２】本発明方法によって製造したＡｌＧａＡｓ
発光素子ランプＬは、第２図に示した従来のＡｌＧａＡ
ｓ発光素子ランプＬ’と同様に、ＡｌＧａＡｓチップ２
のｎ層４側にはｎ電極６及びｐ層８側にはｐ電極１０を
設け、エポキシ樹脂でモールド１２した構造を有してい
る。そして、このＡｌＧａＡｓチップ２の表面に保護膜
として酸化アルミニウム保護膜１６が形成されているも
のである。この保護膜１６の存在により、エポキシ樹脂
のモールド１２から侵入する水分はＡｌＧａＡｓチップ
２に触れることはなくなる。従って、水酸化アルミニウ
ムの白濁膜が形成されることもなく、ＡｌＧａＡｓ発光
素子ランプの光取り出し効率の低下はなくなり、輝度が
低下するという現象も著しく抑制された。AlGaAs manufactured by the method of the present invention
The light emitting element lamp L is the conventional AlGaA shown in FIG.
s Light emitting element lamp L ′, AlGaAs chip 2
The n-electrode 6 is provided on the n-layer 4 side and the p-electrode 10 is provided on the p-layer 8 side, and is molded with an epoxy resin 12. An aluminum oxide protective film 16 is formed on the surface of the AlGaAs chip 2 as a protective film. Due to the presence of this protective film 16, the water entering from the epoxy resin mold 12 does not touch the AlGaAs chip 2. Therefore, a white turbid film of aluminum hydroxide was not formed, the light extraction efficiency of the AlGaAs light emitting element lamp was not reduced, and the phenomenon of reduced luminance was significantly suppressed.
【００２３】上記したような効果を達成することのでき
る酸化アルミニウム保護膜はひび割れがなくかつ膜質が
安定していることが必要である。このような良質の酸化
アルミニウム保護膜を作成するためには、従来知られて
いる如く、ＡｌＧａＡｓチップ２を単にアンモニアと過
酸化水素を含む水溶液に浸水処理すればよいものではな
い。本発明方法におけるが如く、ＡｌＧａＡｓチップの
表面を０．３〜０．６重量％のアンモニアと２５〜３５
重量％の過酸化水素を含む水溶液中において浸水処理し
該発光素子表面に１０００Å以上の厚さの酸化アルミニ
ウムの透明膜を形成することによってひび割れがなくか
つ膜質が安定している保護膜が形成できるものである。The aluminum oxide protective film capable of achieving the above-mentioned effects is required to be free from cracks and have stable film quality. In order to form such a good-quality aluminum oxide protective film, it is not necessary to simply soak the AlGaAs chip 2 in an aqueous solution containing ammonia and hydrogen peroxide, as is conventionally known. As in the method of the present invention, the surface of the AlGaAs chip was treated with 0.3-0.6 wt% ammonia and 25-35 wt.
By forming a transparent film of aluminum oxide having a thickness of 1000 Å or more on the surface of the light-emitting device by subjecting it to a water-immersion treatment in an aqueous solution containing hydrogen peroxide by weight, a protective film having no crack and stable film quality can be formed It is a thing.
【００２４】次に処理時間を１〜３０分の範囲でかつ溶
液組成を０．３〜１．８重量％のアンモニアと２５〜３
５重量％の過酸化水素を含んだ水溶液に変えてＡｌＧａ
Ａｓチップの表面を浸水処理した場合の膜質について光
学顕微鏡を使って外観検査した結果を表１に示す。表１
において、◎はひび無し（良好）、○はひび少し、△は
ひび多し、×はウロコ状（不良）を示す。Next, the treatment time is in the range of 1 to 30 minutes and the solution composition is 0.3 to 1.8% by weight of ammonia and 25 to 3
AlGa in place of an aqueous solution containing 5% by weight of hydrogen peroxide
Table 1 shows the results of the appearance inspection using an optical microscope for the film quality when the surface of the As chip was subjected to the water immersion treatment. Table 1
In ∘, ∘ indicates no crack (good), ∘ indicates little crack, Δ indicates many cracks, and x indicates scale-like (defective).
【００２５】[0025]
【表１】 [Table 1]
【００２６】表１から保護膜の膜質の外観観察は処理時
間を１〜３０分の範囲でかつ溶液組成を０．３〜０．６
重量％のアンモニアと２５〜３５重量％の過酸化水素を
含んだ水溶液で浸水処理した場合の膜質のみ良好でその
他の場合はあまり好ましい膜質とは言えないことがわか
った。また、膜質の検査で１０００Åの満たないものは
薄すぎるために膜質が不安定であることが解った。From Table 1, the appearance of the quality of the protective film is observed by treating the treatment time in the range of 1 to 30 minutes and the solution composition in the range of 0.3 to 0.6.
It was found that the film quality was only good when water-immersion treatment was performed with an aqueous solution containing 25% by weight of ammonia and 25 to 35% by weight of hydrogen peroxide, and was not so preferable in other cases. In addition, the film quality was found to be unstable because the film quality of less than 1000Å was too thin.
【００２７】次に、溶液組成を０．５重量％のアンモニ
アと３０重量％の過酸化水素を含んだ水溶液で浸水処理
した場合の浸水時間と膜質の関係を調べた結果を図３に
示した。図３の結果から溶液組成を０．５重量％のアン
モニアと３０重量％の過酸化水素を含んだ水溶液の場合
には膜質２．５分間の処理で約１０００Åとなり１０分
間の処理で約３０００Åとなり飽和することが解った。Next, FIG. 3 shows the results of examining the relationship between the water immersion time and the film quality when the solution composition was immersed in an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide. . From the results of Fig. 3, when the solution composition is an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide, the film quality becomes about 1000Å after 2.5 minutes of treatment and about 3000Å after 10 minutes of treatment. It turned out to be saturated.
【００２８】次に、溶液組成を０．５重量％のアンモニ
アと３０重量％の過酸化水素を含んだ水溶液と１．５重
量％のアンモニアと３０重量％の過酸化水素を含んだ水
溶液で浸水処理したそれぞれの生成膜を４５０℃、Ｎ2
雰囲気、２０分間熱処理した場合の膜質の変化について
調べた結果を図４に示した。同図の結果より、上記０．
５重量％のアンモニアと３０重量％の過酸化水素を含ん
だ水溶液を用いて生成した膜はほとんど変化せず、１．
５重量％のアンモニアと３０重量％の過酸化水素を含ん
だ水溶液を用いて生成したものに比較して極めて安定で
あることが解った。Next, the solution composition is flooded with an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide, and an aqueous solution containing 1.5% by weight of ammonia and 30% by weight of hydrogen peroxide. Each treated product film was treated with N 2
FIG. 4 shows the results of examining the change in film quality when heat-treated for 20 minutes in the atmosphere. From the results shown in FIG.
The film formed using an aqueous solution containing 5% by weight ammonia and 30% by weight hydrogen peroxide showed almost no change.
It was found to be extremely stable as compared to that produced using an aqueous solution containing 5 wt% ammonia and 30 wt% hydrogen peroxide.
【００２９】前記した文献（第４４回応用物理学会予稿
集、４８５頁、２８ａ−Ｈ−３、１９８３）では好適な
Ｈ2 Ｏ2/ＮＨ4 ＯＨ比が２０、つまり１．５重量％のア
ンモニアと３０重量％の過酸化水素を含む水溶液とし
て、その場合の膜厚と形成時間について開示し、更に熱
処理によって保護膜の厚さが約１／２に減少し強固な安
定した膜となることが教示されている。しかし逆に言え
ば、この場合、熱処理しなければ強固でなくかつ不安定
な膜の状態であることが示されており、表１において、
アンモニア１．５重量％の列で過酸化水素２５〜３５重
量％の丁度真ん中であって、膜にひびが多く発生する
（△）かウロコ状（×）となる状態である。 The aforementioned literature (44th Applied Physics Society pre draft <br/> Library, 485 pp., 28a-H-3,1983) In a preferred H 2 O 2 / NH 4 O H ratio of 20, that is 1 As an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide, the film thickness and the forming time in that case are disclosed, and further the heat treatment reduces the thickness of the protective film to about 1/2, resulting in a stable stability. It is taught that the resulting film is a film. However, conversely, in this case, it is shown that the film is not strong and unstable unless heat treatment is performed.
25 to 35 weights of hydrogen peroxide in the column with 1.5% by weight ammonia
Just in the middle of the amount%, many cracks occur in the film
(Δ) or scale-like (×).
【００３０】本発明に規定した条件によって酸化アルミ
ニウム保護膜をＡｌＧａＡｓチップ表面に形成すれば膜
生成後の面倒な熱処理工程を要することなくひび割れが
なくかつ膜質が安定している保護膜が形成できるもので
ある。By forming an aluminum oxide protective film on the surface of an AlGaAs chip under the conditions specified in the present invention, a protective film having no cracks and stable film quality can be formed without requiring a troublesome heat treatment process after film formation. Is.
【００３１】続いて、溶液組成を０．５重量％のアンモ
ニアと３０重量％の過酸化水素を含んだ水溶液で２．５
分間浸水処理し酸化アルミニウム保護膜をＡｌＧａＡｓ
チップ表面に形成した後、図１に示した構成のランプを
作成し、高温高湿信頼性試験（８０℃、１００％ＲＨ、
通電電流５０ｍＡ（ＤＣ）、１０００時間通電）を行
い、酸化アルミニウム保護膜を形成しないＡｌＧａＡｓ
チップを用いたランプ（図２の構成）の性能と比較して
図５に示した。同図の結果から従来の酸化アルミニウム
保護膜を形成しないＡｌＧａＡｓチップを用いたランプ
では急激に輝度が劣化したのに対し、本発明方法により
酸化アルミニウム保護膜をＡｌＧａＡｓチップ表面に形
成したチップを用いたランプは１０００時間経過後でも
高い残光率を示し、輝度の劣化が効果的に防止されるこ
とが確認できた。Subsequently, the solution composition was adjusted to 2.5 with an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide.
Water immersion treatment for a minute and aluminum oxide protective film as AlGaAs
After forming on the surface of the chip, a lamp having the structure shown in FIG. 1 was prepared and subjected to a high temperature and high humidity reliability test (80 ° C., 100% RH,
AlGaAs with a current of 50 mA (DC) for 1000 hours) and no aluminum oxide protective film
The performance is shown in FIG. 5 in comparison with the performance of the lamp using the chip (configuration of FIG. 2). From the results shown in the figure, while the conventional lamp using the AlGaAs chip not having the aluminum oxide protective film had a sharp deterioration in brightness, the chip having the aluminum oxide protective film formed on the surface of the AlGaAs chip by the method of the present invention was used. It was confirmed that the lamp showed a high afterglow rate even after 1000 hours, and the deterioration of the luminance was effectively prevented.
【００３２】[0032]
【発明の効果】以上述べたごとく、本発明によれば、Ａ
ｌＧａＡｓチップの表面へひび割れの無い、緻密（熱処
理によって膜厚が急激に減少しない）かつ均質な酸化ア
ルミニウム保護膜を形成することにより、初めて熱処理
工程を必要とせずＡｌＧａＡｓ発光素子光取り出し効率
の低下を防止し輝度の劣化を有効に防止したＡｌＧａＡ
ｓ発光素子を製造することができる。As described above, according to the present invention, A
By forming a dense (thickness does not sharply decrease by heat treatment) and uniform aluminum oxide protective film on the surface of the 1GaAs chip, the heat treatment step is not required for the first time and the light extraction efficiency of the AlGaAs light emitting device is reduced. AlGaA that effectively prevents the deterioration of brightness
An s light emitting device can be manufactured.
【図１】本発明方法によりＡｌ2 Ｏ3 保護膜を生成した
ＡｌＧａＡｓチップを用いて作成したランプの概略説明
図である。FIG. 1 is a schematic explanatory view of a lamp produced by using an AlGaAs chip having an Al 2 O 3 protective film formed by the method of the present invention.
【図２】Ａｌ2 Ｏ3 保護膜のないＡｌＧａＡｓチップを
用いて作成した従来のランプの概略説明図である。FIG. 2 is a schematic explanatory view of a conventional lamp produced by using an AlGaAs chip without an Al 2 O 3 protective film.
【図３】膜生成時間と膜厚との関係を示すグラフであ
る。FIG. 3 is a graph showing the relationship between film formation time and film thickness.
【図４】保護膜生成後に熱処理を行った場合の保護膜の
膜厚の変化を示すグラフである。FIG. 4 is a graph showing changes in the film thickness of the protective film when heat treatment is performed after the protective film is formed.
【図５】高温高湿信頼性試験の結果を示すグラフであ
る。FIG. 5 is a graph showing the results of a high temperature and high humidity reliability test.
Ｌ 発光素子ランプ １６ 酸化アルミニウム保護膜 L light emitting element lamp 16 aluminum oxide protective film
Claims (2)
を、アンモニアと過酸化水素を含む水溶液中に浸漬して
該チップの表面に保護膜を形成する方法であって、前記
水溶液中のアンモニア濃度を０．３〜０．６重量％と
し、過酸化水素濃度を２５〜３５重量％とすることによ
り、保護膜形成後の熱処理を行わずに、ＡｌＧａＡｓチ
ップ表面へ保護膜を形成することを特徴とする発光素子
の製造方法。1. An AlGaAs chip having a pn junction is immersed in an aqueous solution containing ammonia and hydrogen peroxide.
A method of forming a protective film on the surface of the chip, comprising:
Ammonia concentration in the aqueous solution is 0.3-0.6% by weight
By adjusting the hydrogen peroxide concentration to 25 to 35% by weight.
Without heat treatment after forming the protective film.
A method for manufacturing a light emitting device, which comprises forming a protective film on the surface of the semiconductor device.
酸化アルミニウムであることを特徴とする請求項１記載
の発光素子の製造方法。2. The protective film has a thickness of 1000 Å or more.
It is aluminum oxide , The manufacturing method of the light emitting element of Claim 1 characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41119890A JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41119890A JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04216683A JPH04216683A (en) | 1992-08-06 |
| JP2559536B2 true JP2559536B2 (en) | 1996-12-04 |
Family
ID=18520237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP41119890A Expired - Fee Related JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2559536B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2817590B2 (en) * | 1993-09-24 | 1998-10-30 | 信越半導体株式会社 | Light emitting device manufacturing method |
| US6201264B1 (en) * | 1999-01-14 | 2001-03-13 | Lumileds Lighting, U.S., Llc | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
| JP2011035017A (en) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | Light-emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633063B2 (en) * | 1973-03-08 | 1981-07-31 | ||
| JPS52130294A (en) * | 1976-04-24 | 1977-11-01 | Oki Electric Ind Co Ltd | Production of semiconductor device |
-
1990
- 1990-12-17 JP JP41119890A patent/JP2559536B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04216683A (en) | 1992-08-06 |
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