JP2550982B2 - Method of forming resist mask - Google Patents
Method of forming resist maskInfo
- Publication number
- JP2550982B2 JP2550982B2 JP62084224A JP8422487A JP2550982B2 JP 2550982 B2 JP2550982 B2 JP 2550982B2 JP 62084224 A JP62084224 A JP 62084224A JP 8422487 A JP8422487 A JP 8422487A JP 2550982 B2 JP2550982 B2 JP 2550982B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- opening pattern
- resist mask
- monomer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Description
【発明の詳細な説明】 〔概 要〕 光分解性でないレジストを用いて開孔パターンを有す
るマスク層を形成し、該開孔パターンの側面に選択的に
光分解性レジストモノマーの活性種（ラジカル）重合体
を堆積せしめて該開孔パターンを微細化するレジストマ
スクの形成方法。DETAILED DESCRIPTION [Overview] A mask layer having an opening pattern is formed using a resist that is not photodegradable, and active species (radicals of a photodegradable resist monomer (radical) are selectively formed on the sides of the opening pattern. ) A method of forming a resist mask in which a polymer is deposited to miniaturize the opening pattern.
本発明なレジストマスクの形成方法に係り、特に微細
開孔パターンを有するレジストマスクの形成方法に関す
る。The present invention relates to a method for forming a resist mask, and more particularly to a method for forming a resist mask having a fine opening pattern.
LSI、超LSI等、半導体ICの高集積化を進める上に、該
ICを構成する溝パターン、配線パターン等、各種パター
ンの微細化が重要な課題であり、該微細パターン形成の
際のエッチング或いはリフトオフのマスク体として用い
るレジストマスクの開孔パターンの微細化が強く要望さ
れている。In order to increase the integration of semiconductor ICs such as LSI and VLSI,
The miniaturization of various patterns such as groove patterns and wiring patterns that form ICs is an important issue, and it is strongly desired to miniaturize the opening pattern of the resist mask used as a mask body for etching or lift-off when forming the fine patterns. Has been done.
従来の開孔パターンを有するレジストマスクの形成方
法は、被加工基板上にスピンコート法により例えばポジ
型のレジスト層を１〜２μｍ程度の厚さに塗布し、該レ
ジスト層に所定のマスクを介して開孔パターンを露光
し、所定の現像を行って該露光部を溶解除去する方法で
あった。The conventional method of forming a resist mask having an opening pattern is, for example, applying a positive resist layer to a thickness of about 1 to 2 μm on a substrate to be processed by a spin coating method, and then applying a predetermined mask to the resist layer. The exposed hole pattern is exposed to light, and predetermined development is performed to dissolve and remove the exposed portion.
しかしこの方法によると、従来工業的に最も解像度が
優れた方法として認められている電子ビームによる描画
露光を用いても、最小開孔幅は0.8μｍ程度であり、ば
らつき等を考慮して量産に用いられる開孔幅は１〜1.5
μｍ程度が限度になっていた。However, according to this method, the minimum aperture width is about 0.8 μm even when using electron beam drawing exposure, which is conventionally recognized as the method with the highest resolution in the industry, and it is suitable for mass production in consideration of variations. The aperture width used is 1 to 1.5
The limit was about μm.
本発明が解決しようとする問題点は、従来のレジスト
マスクの形成方法においては量産工程において開孔幅の
限界が１〜1.5μｍ程度であり、半導体ICを更に高集積
化する際に必要な１μｍ未満のサブミクロン幅の開孔パ
ターンが形成できなかったことである。The problem to be solved by the present invention is that in the conventional method of forming a resist mask, the limit of the opening width is about 1 to 1.5 μm in the mass production process, which is 1 μm required for further integration of the semiconductor IC. That is, an opening pattern having a submicron width of less than 1 could not be formed.
上記問題点は、被加工基板上に光分解性でないレジス
ト層を形成し、該レジスト層に開孔パターンを形成する
工程と、 該レジスト層上に該被加工基板面に対して直角な向き
に光を照射しながら、光分解性レジストのモノマーガス
と該被加工基板と反応しない活性種（ラジカル）含有ガ
スとを供給し、該レジスト層の開孔パターンの側面に選
択的に該光分解性レジストモノマーのラジカル重合体を
堆積せしめる工程とを有する本発明によるレジストマス
クの形成方法によって解決される。The above-mentioned problems include the step of forming a resist layer which is not photodegradable on a substrate to be processed and forming an opening pattern in the resist layer, and a step of forming a pattern on the resist layer at right angles to the surface of the substrate to be processed. While irradiating light, a monomer gas of the photodecomposable resist and a gas containing an active species (radical) that does not react with the substrate to be processed are supplied, and the photodecomposable property is selectively applied to the side surface of the opening pattern of the resist layer. And a method of forming a resist mask according to the present invention, which comprises depositing a radical polymer of a resist monomer.
即ち本発明の方法は、レジストモノマーとラジカルと
の反応によってレジストモノマーのラジカル重合体を析
出せしめるレジストモノマーのラジカル重合反応と、該
レジストモノマーのラジカル重合体の光分解性とを用い
て構成されたもので、 被加工基板上に光分解性でないレジストよりなり開孔
パターンを有するレジストマスク層を形成した後、該レ
ジストマスク層上に垂直に光を照射した状態で、該レジ
ストマスク上に光分解性レジストのモノマーガスとダウ
ンフロー型プラズマ励起方式によるラジカル含有ガスと
を供給して、開孔パターン内を含む該レジストマスク上
に該光分解性レジストモノマーのラジカル重合体を析出
堆積せしめ、且つ前記垂直照射光によってレジストマス
クの上面及び開孔パターンの底面に堆積され上記照射光
に強く曝される光分解性レジストモノマーのラジカル重
合体を分解除去して、該レジストマスクの開光パターン
の側面のみに選択的に光分解性レジストモノマーのラジ
カル重合体を所要の厚さに堆積せしめる方法で、これに
よってレジストマスクの開孔パターン幅の縮小を図って
サブミクロン幅の開孔パターンを有するレジストマスク
を形成する。That is, the method of the present invention is constituted by using the radical polymerization reaction of the resist monomer to precipitate the radical polymer of the resist monomer by the reaction of the resist monomer and radicals, and the photodegradability of the radical polymer of the resist monomer. After a resist mask layer made of a non-photodegradable resist and having an opening pattern is formed on the substrate to be processed, the resist mask layer is photo-decomposed on the resist mask layer in a state where light is vertically irradiated. Supplying a monomer gas of a photo-resist and a radical-containing gas by a down-flow type plasma excitation method to deposit and deposit a radical polymer of the photo-decomposable resist monomer on the resist mask including the inside of the opening pattern, and The vertical irradiation light causes the above irradiation light to be deposited on the upper surface of the resist mask and the bottom surface of the opening pattern. By decomposing and removing the radical polymer of the photodegradable resist monomer that is strongly exposed to the light, and selectively depositing the radical polymer of the photodegradable resist monomer to the required thickness only on the side surface of the light-opening pattern of the resist mask. Method, thereby reducing the width of the opening pattern of the resist mask to form a resist mask having an opening pattern of submicron width.
〔実施例〕 以下本発明を、図示実施例により具体的に説明する。[Examples] The present invention will be specifically described below with reference to illustrated examples.
第１図（ａ）〜（ｃ）は本発明の方法の一実施例の工
程断面図で、第２図はメチルメタクリルモノマーの分子
構造図、第３図は本発明の方法に用いる反応装置の模式
側断面図である。1 (a) to 1 (c) are process cross-sectional views of an embodiment of the method of the present invention, FIG. 2 is a molecular structure diagram of a methylmethacryl monomer, and FIG. 3 is a reaction apparatus used in the method of the present invention. It is a schematic side sectional view.
本発明の方法により例えば0.6μｍの幅を有するスリ
ット状の開孔パターンを有するレジストマスクを形成す
るに際しては、 先ず第１図（ａ）に示すように、エッチング等の加工
を行う被加工基板１上に、スピンコート法により例えば
１μｍ程度の厚さに、光分解性でなく、且つ解像度の優
れた電子ビーム露光用のポジレジスト層、例えばPBS
（ポリブテンサルフォン）レジスト層２を形成する。When forming a resist mask having a slit-shaped opening pattern having a width of, for example, 0.6 μm by the method of the present invention, first, as shown in FIG. A positive resist layer for electron beam exposure having a thickness of, for example, about 1 μm, which is not photodegradable and has excellent resolution, is formed by spin coating, for example, PBS.
(Polybutene sulfone) A resist layer 2 is formed.
次いで通常の電子ビーム露光方法により該PBSレジス
ト層２に例えば1.0μｍ幅を有するスリットパターンを
露光し、所定の現像を行って、第１図（ｂ）に示すよう
に、該PBSレジスト層２に幅1.0μｍの第１のスリット状
開孔パターン３を形成する。Then, a slit pattern having a width of, for example, 1.0 μm is exposed on the PBS resist layer 2 by a normal electron beam exposure method, and predetermined development is performed to form a pattern on the PBS resist layer 2 as shown in FIG. 1 (b). A first slit-shaped opening pattern 3 having a width of 1.0 μm is formed.
次いで該第１のスリット状開孔パターン３を有するPB
Sレジスト層２上に垂直に紫外光（UV）を照射した状態
で該レジスト層２上に、光分解性を有するレジストモノ
マーガス、例えばアクリル酸系のレジスト、ポリメチル
メタクリレート（PMMA）のモノマーである第２図に示す
ような構造のメチルメタクリレート（MMA）ガスと、ダ
ウンフロー方式のプラズマ励起手段によって形成された
被加工基板と反応しないラジカル含有ガスである例えば
塩素ラジカル（Cl＊）を含有する塩素（Cl2）ガスを供
給し、 第１図（ｃ）に示すように、該レジスト層２の第１の
スリット状開孔パターン３の側面即ち内面のみに選択的
に、例えば0.2μｍの厚さに上記Clを含んだMMAのラジカ
ル重合体層４を堆積せしめる。これによって、0.6μｍ
のサブミクロン幅を有する第２のスリット状開孔パター
ン５を有するレジストマスク102が形成される。Then, the PB having the first slit-shaped opening pattern 3
S A resist monomer gas having photodegradability, for example, an acrylic acid-based resist, a polymethylmethacrylate (PMMA) monomer, is applied onto the resist layer 2 in a state where it is vertically irradiated with ultraviolet light (UV). It contains a methyl methacrylate (MMA) gas having a structure as shown in FIG. 2 and a radical-containing gas that does not react with the substrate to be processed formed by down-flow type plasma excitation means, for example, chlorine radicals (Cl *). By supplying chlorine (Cl 2 ) gas, as shown in FIG. 1 (c), only the side surface, that is, the inner surface of the first slit-shaped opening pattern 3 of the resist layer 2 is selectively formed, for example, with a thickness of 0.2 μm. Then, the radical polymer layer 4 of MMA containing Cl is deposited. By this, 0.6 μm
A resist mask 102 having a second slit-shaped opening pattern 5 having a submicron width is formed.
第３図は上記ラジカル重合に用いた、通常ドライエッ
チング処理等で使用される反応装置の模式側断面図で、
図中、11はステンレス等よりなり例えば30cm×30cm程度
の内容積を有する反応容器、12は石英等よりなる透光
窓、13はMMAモノマーガス流入口、14はラジカル含有Cl2
ガス流入口、15は真空排気口、16は高周波コイル17を具
備したダウンフロー方式のプラズマ励起手段、18は基板
ステージ、19は被加工基板、20は被加工基板に垂直に光
を照射する紫外光光源を示す。FIG. 3 is a schematic side sectional view of a reaction device used for the above-mentioned radical polymerization, which is usually used in dry etching treatment and the like.
In the figure, 11 is a reaction vessel made of stainless steel or the like and having an internal volume of, for example, about 30 cm × 30 cm, 12 is a transparent window made of quartz, 13 is an MMA monomer gas inlet, 14 is radical-containing Cl 2
A gas inlet, 15 a vacuum exhaust port, 16 a down-flow type plasma excitation means equipped with a high frequency coil 17, 18 a substrate stage, 19 a substrate to be processed, 20 ultraviolet light for vertically irradiating the substrate to be processed Indicates a light source.
前記レジストモノマーのラジカル重合に際しては、該
反応装置の基板ステージ18上に前記第１の開孔パターン
３が形成されたレジスト層２を有する被加工基板１を載
置し、例えば下記の反応条件で処理がなされる。In the radical polymerization of the resist monomer, the substrate 1 to be processed having the resist layer 2 having the first opening pattern 3 formed thereon is placed on the substrate stage 18 of the reaction apparatus, for example, under the following reaction conditions. Processing is done.
反応条件例 MMA流入量 ５〜10 SCCM Cl2流入量 100 SCCM 反応圧力 0.2Torr 高周波電力 120 Ｗ 基板温度 常温 紫外光光源 アルゴン水銀ランプ この処理によってMMAの塩素ラジカル重合体の堆積は4
00Å/min程度の速度でなされ、上記紫外光照射による該
ラジカル重合体の分解は500Å/min程度の速度で行われ
る。Reaction condition example MMA inflow 5-10 SCCM Cl 2 inflow 100 SCCM Reaction pressure 0.2Torr High frequency power 120 W Substrate temperature Normal temperature UV light source Argon mercury lamp MMA chlorine radical polymer deposition by this treatment is 4
The radical polymer is decomposed by the above-mentioned ultraviolet light irradiation at a rate of about 500 Å / min.
従って該実施例においては紫外光が垂直に照射されな
いレジスト層２の第１の開孔パターン３の側面（内面）
には選択的に400Å/min程度の速度でMMAの塩素ラジカル
重合体層４が堆積され、紫外光に強く照射されるレジス
ト層２の上面及び第１の開孔パターン３の底面にはMMA
のラジカル重合体層４は形成されない。Therefore, in the embodiment, the side surface (inner surface) of the first opening pattern 3 of the resist layer 2 which is not vertically irradiated with ultraviolet light.
MMA chlorine radical polymer layer 4 is selectively deposited at a rate of about 400 Å / min, and MMA is deposited on the upper surface of resist layer 2 and the bottom surface of first opening pattern 3 which are strongly irradiated with ultraviolet light.
The radical polymer layer 4 is not formed.
そして約５分程度の処理により第１の開光パターン３
の側面に厚さ0.2μｍのラジカル重合体層４が堆積さ
れ、幅0.6μｍのスリット状の第２の開光パターンを有
するレジストマスク102が形成される。Then, the first light-opening pattern 3 is processed for about 5 minutes.
A radical polymer layer 4 having a thickness of 0.2 μm is deposited on the side surface of the resist mask 102, and a resist mask 102 having a slit-shaped second light-opening pattern having a width of 0.6 μm is formed.
なお上記重合反応において、重合体の堆積速度はモノ
マーガス及びラジカル含有ガスの流量、ラジカル含有
率、基板温度等の調整によって精度良く制御できるの
で、第１の開孔パターンを十分な精度が得られる１〜1.
5μｍ程度の幅で精度良く形成して置くことによって、
正確な幅を有するサブミクロンパターンが容易に形成さ
れる。In the above-mentioned polymerization reaction, the deposition rate of the polymer can be accurately controlled by adjusting the flow rates of the monomer gas and the radical-containing gas, the radical content rate, the substrate temperature, etc., so that the first opening pattern can be sufficiently accurate. 1-1.
By forming with a width of about 5 μm and placing it accurately,
Submicron patterns with accurate width are easily formed.
このようにして形成されたレジストマスク102は、通
常通りエッチング或いはリフトオフ等の気相処理のマス
クに用いられ、通常前記反応容器11をその侭引続き使用
して該気相処理が行われる。The resist mask 102 thus formed is used as a mask for vapor phase treatment such as etching or lift-off as usual, and the vapor phase treatment is usually performed by using the reaction vessel 11 after that.
なお本発明の方法は、上記ポジレジストに限らずネガ
レジストによっても実施することが可能である。The method of the present invention is not limited to the above positive resist, and can be carried out with a negative resist.
以上実施例を用いて説明したように、本発明の方法に
よれば、サブミクロン寸法の微細幅を有する高精度のス
リット状開孔パターンを具備したレジストマスクが極め
て容易に形成できる。As described above with reference to the embodiments, according to the method of the present invention, a resist mask having a highly precise slit-shaped opening pattern having a fine width of submicron dimension can be formed very easily.
従って本発明は、LSI、超LSI等の一層の高集積化に極
めて有効である。Therefore, the present invention is extremely effective for higher integration of LSI, VLSI and the like.
第１図（ａ）〜（ｃ）は本発明方法の一実施例の工程断
面図、 第２図はメチルメタクリレート（MMA）モノマーの分子
構造図、 第３図は本発明の方法に用いる反応装置の模式側断面図
である。 図において、 １は被加工基板、 ２はPBSレジスト層、 ３は第１のスリット状開孔パターン、 ４はMMAのラジカル重合体層、 ５は第２のスリット状開孔パターン、 102はレジストマスク を示す。1 (a) to 1 (c) are process cross-sectional views of one embodiment of the method of the present invention, FIG. 2 is a molecular structure diagram of a methyl methacrylate (MMA) monomer, and FIG. 3 is a reactor used in the method of the present invention. FIG. In the figure, 1 is a substrate to be processed, 2 is a PBS resist layer, 3 is a first slit-shaped opening pattern, 4 is a radical polymer layer of MMA, 5 is a second slit-shaped opening pattern, and 102 is a resist mask. Indicates.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/30 ５６４ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display area H01L 21/30 564
Claims (1)
を形成し、該レジスト層に開孔パターンを形成する工程
と、 該レジスト層上に該被加工基板面に対して直角な向きに
光を照射しながら、光分解性レジストのモノマーガスと
該被加工基板と反応しない活性種含有ガスとを供給し、
該レジスト層の開孔パターンの側面に選択的に該光分解
性レジストモノマーのラジカル重合体を堆積せしめる工
程とを有することを特徴とするレジストマスクの形成方
法。1. A step of forming a resist layer which is not photodecomposable on a substrate to be processed, and forming an opening pattern in the resist layer, and a direction perpendicular to the surface of the substrate to be processed on the resist layer. While irradiating light, a monomer gas of the photodegradable resist and an active species-containing gas that does not react with the substrate to be processed are supplied.
And a step of selectively depositing a radical polymer of the photodegradable resist monomer on a side surface of the opening pattern of the resist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62084224A JP2550982B2 (en) | 1987-04-06 | 1987-04-06 | Method of forming resist mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62084224A JP2550982B2 (en) | 1987-04-06 | 1987-04-06 | Method of forming resist mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63249837A JPS63249837A (en) | 1988-10-17 |
| JP2550982B2 true JP2550982B2 (en) | 1996-11-06 |
Family
ID=13824505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62084224A Expired - Lifetime JP2550982B2 (en) | 1987-04-06 | 1987-04-06 | Method of forming resist mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2550982B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244369B2 (en) | 1997-07-05 | 2007-07-17 | Deutsche Telekom Ag | Method for producing active or passive components on a polymer basis for integrated optical devices |
| WO1999003021A1 (en) * | 1997-07-05 | 1999-01-21 | Deutsche Telekom Ag | Method for producing active or passive components on a polymer basis for integrated optical devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4022932A (en) * | 1975-06-09 | 1977-05-10 | International Business Machines Corporation | Resist reflow method for making submicron patterned resist masks |
| JPS5886726A (en) * | 1981-11-19 | 1983-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for pattern |
| GB2121197A (en) * | 1982-05-26 | 1983-12-14 | Philips Electronic Associated | Plasma-etch resistant mask formation |
| GB2121198A (en) * | 1982-05-26 | 1983-12-14 | Philips Electronic Associated | Plasma-etch resistant mask formation |
| JPS62273528A (en) * | 1986-05-21 | 1987-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Method for silylating surface of polymer film and pattern forming method using same |
-
1987
- 1987-04-06 JP JP62084224A patent/JP2550982B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63249837A (en) | 1988-10-17 |
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