JP2536546B2 - Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time - Google Patents

Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time

Info

Publication number
JP2536546B2
JP2536546B2 JP62237041A JP23704187A JP2536546B2 JP 2536546 B2 JP2536546 B2 JP 2536546B2 JP 62237041 A JP62237041 A JP 62237041A JP 23704187 A JP23704187 A JP 23704187A JP 2536546 B2 JP2536546 B2 JP 2536546B2
Authority
JP
Japan
Prior art keywords
foil material
brazing
ribbon foil
decrease
over time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62237041A
Other languages
Japanese (ja)
Other versions
JPS6478698A (en
Inventor
山本　　茂
直樹 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP62237041A priority Critical patent/JP2536546B2/en
Publication of JPS6478698A publication Critical patent/JPS6478698A/en
Application granted granted Critical
Publication of JP2536546B2 publication Critical patent/JP2536546B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の組立てにろう材として使用
するに際して、経時的硬さ低下がほとんどないので、製
造後の経過時間に全く影響されることなく、良好な作業
性にてろう付けを行なうことができるAu合金リボン箔材
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention has almost no decrease in hardness over time when it is used as a brazing filler metal for assembling a semiconductor device, and therefore is completely affected by the elapsed time after manufacturing. The present invention relates to an Au alloy ribbon foil material that can be brazed with good workability.

〔従来の技術〕 従来、一般に、半導体装置を組立てるに際し、Siチッ
プを基板（例えばリードフレーム）に接合するが、この
接合はSiチップと基板との間に純Auリボン箔材を挾み、
加熱圧着して純Auリボン箔材をろう材として作用させ接
合することは良く知られているところである。[Prior Art] Generally, when assembling a semiconductor device, a Si chip is generally bonded to a substrate (for example, a lead frame). This bonding involves sandwiching a pure Au ribbon foil material between the Si chip and the substrate.
It is well known to perform thermocompression bonding to act and bond a pure Au ribbon foil material as a brazing material.

この時使用する純Auリボン箔材は、数ｍ〜数千ｍの長
さを有する厚さ:7〜50μｍの純Auリボン箔材が使用さ
れ、この純Auリボン箔材は、通常、リールに巻き取られ
て保存ないし貯蔵されている。The pure Au ribbon foil material used at this time is a pure Au ribbon foil material having a length of several meters to several thousand meters and a thickness of 7 to 50 μm. This pure Au ribbon foil material is usually used for reels. It is rolled up and stored or stored.

半導体装置を自動組立てする場合、この純Auリボン箔
材は、リールから自動的に繰り出され、Siチップとほぼ
同じ大きさに切断され、Siチップと基板との間に供給さ
れ、加熱圧着によりろう付けする。When assembling semiconductor devices automatically, this pure Au ribbon foil material is automatically unwound from the reel, cut into almost the same size as the Si chip, supplied between the Si chip and the substrate, and bonded by heating and pressure bonding. Attach.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

ところが、上記従来の純Auリボン箔材は特性的に経時
変化し易く、箔材への加工後数時間で軟化が起きはじ
め、数週間後には完全に軟化してしまい、この結果加工
後、速やかに実用に供することができない場合には、リ
ール内で箔材相互間に密着現象が起り、リールからの繰
り出し不良が発生するばかりでなく、軟化による剛性不
足からシワの発生や供給の不安定さなどを伴い、ろう付
け作業性の低下は避けられず、自動組立機の稼動率の著
しい低下をもたらすのが現状である。However, the above-mentioned conventional pure Au ribbon foil material is characteristically prone to change with time, and softening begins to occur within a few hours after processing the foil material, and after a few weeks, it is completely softened. If it cannot be put to practical use, the phenomenon of adhesion occurs between foil materials in the reel, and not only reeling failure from the reel occurs, but also wrinkles and unstable supply due to insufficient rigidity due to softening. As a result, the workability of brazing is unavoidably deteriorated, and the operating rate of the automatic assembly machine is remarkably decreased.

〔問題点を解決するための手段〕[Means for solving problems]

そこで、本発明者等は、上述のような観点から、上記
の従来純リボン箔材に着目し、これの経時的硬さ低下を
防止すべく研究を行なった結果、前記純Auリボン箔材
に、合金成分として、 Be:1〜45ppm,Ca:1〜45ppm, を含有させると、BeとCaの共存含有によって、箔材に加
工直後の硬さ（剛性）を時間経過に関係なく保持し、こ
のように経時的硬さ低下が著しく抑制されることから、
軟化による密着現象や剛性不足によるトラブルの発生が
皆無となり、したがってこの結果のAu合金リボン箔材
を、半導体装置の自動ろう付けにろう材として用いた場
合、作業性よく、かつ高い稼動率でろう付けを行なうこ
とができるようになるという知見を得たのである。Therefore, the present inventors, from the above-mentioned viewpoint, pay attention to the above-mentioned conventional pure ribbon foil material, and as a result of conducting research to prevent a decrease in hardness over time, the pure Au ribbon foil material was obtained. When Be: 1 to 45ppm, Ca: 1 to 45ppm, as an alloy component, the coexistence of Be and Ca keeps the hardness (rigidity) of the foil material immediately after processing regardless of the passage of time. Since the decrease in hardness over time is significantly suppressed in this way,
The adhesion phenomenon due to softening and the occurrence of trouble due to lack of rigidity are completely eliminated. Therefore, when the resulting Au alloy ribbon foil material is used as a brazing material for automatic brazing of semiconductor devices, it will have good workability and high operation rate. I gained the knowledge that I can do it.

この発明は、上記知見にもとづいてなされたものであ
って、合金成分として、 Be:1〜45ppm,Ca:1〜45ppm, を含有し、残りが99.99重量％以上のAuと微量の不可避
不純物からなる組成を有するAu合金で構成した経時的硬
さ低下のない半導体装置のろう付け用Au合金リボン箔材
に特徴を有するものである。This invention has been made based on the above findings, and contains Be: 1 to 45 ppm, Ca: 1 to 45 ppm, as an alloy component, and the balance of 99.99% by weight or more of Au and trace amounts of unavoidable impurities. The present invention is characterized by an Au alloy ribbon foil material for brazing of a semiconductor device, which is composed of an Au alloy having the following composition and has no decrease in hardness over time.

なお、この発明のAu合金リボン箔材において、Beおよ
びCaの含有量を上記の通りに限定したのは、上記の通
り、この発明のAu合金リボン箔材では、BeとCaの共存含
有によって経時的硬さ低下が防止されるものであるか
ら、BeおよびCaいずれかの含有量でも1ppm未満になる
と、所望の経時的軟化現象を防止することができず、一
方その含有量がそれぞれ45ppmを越えるようになると、A
uの含有量を99.99重量％以上に保持することが困難とな
り、この場合にはAuによってもたらされる特性が損なわ
れるようになるという理由によるものである。Incidentally, in the Au alloy ribbon foil material of the present invention, the content of Be and Ca is limited as described above, as described above, in the Au alloy ribbon foil material of the present invention, due to the co-inclusion of Be and Ca, Since the decrease in hardness is prevented, if the content of either Be or Ca is less than 1 ppm, the desired aging softening phenomenon cannot be prevented, while the content exceeds 45 ppm, respectively. When it comes to A
This is because it becomes difficult to maintain the content of u at 99.99% by weight or more, and in this case, the properties brought about by Au are impaired.

〔実 施 例〕〔Example〕

つぎに、この発明のAu合金リボン箔材を実施例により
説明する。Next, the Au alloy ribbon foil material of the present invention will be described with reference to examples.

通常の真空溶解炉を用いて、それぞれ第１表に示され
る成分組成をもったAu合金溶湯を調製し、厚さ:15mm×
幅:70mm×長さ:150mmの寸法をもったインゴットに鋳造
し、このインゴットの両面を面削して厚さ:13mmとし、
これのマイクロビッカース硬さを荷重:300gの条件で測
定し、ついでこのインゴットに通常の条件で冷間圧延を
施して厚さ:0.02mmの本発明リボン箔材１〜７および比
較リボン箔材１〜３をそれぞれ製造した。Using a normal vacuum melting furnace, we prepared Au alloy melts with the composition shown in Table 1, respectively, and thickness: 15 mm ×
Width: 70 mm × length: cast into an ingot with dimensions of 150 mm, both sides of this ingot are chamfered to a thickness of 13 mm,
The micro Vickers hardness of this was measured under the condition of a load of 300 g, and then the ingot was subjected to cold rolling under normal conditions to obtain the ribbon foil materials 1 to 7 of the present invention having a thickness of 0.02 mm and the comparative ribbon foil material 1 ~ 3 were produced respectively.

なお、比較リボン箔材１は従来純Auリボン箔材に相当
するものであり、また比較リボン箔材2,3はAu合金の合
金成分であるBeおよびCaのいずれかを含有しないもので
ある。The comparative ribbon foil material 1 corresponds to the conventional pure Au ribbon foil material, and the comparative ribbon foil materials 2 and 3 do not contain any of Be and Ca which are alloy components of the Au alloy.

つぎに、この結果得られた各種のリボン箔材につい
て、箔材への加工直後、１ヶ月経過後、３ヶ月経過後、
および６ヶ月経過後のマイクロビッカース硬さ（荷重:2
5g）を測定した。これらの結果を第１表に示した。Next, for various ribbon foil materials obtained as a result, immediately after processing into foil materials, after 1 month, after 3 months,
And micro Vickers hardness after 6 months (load: 2
5 g) was measured. The results are shown in Table 1.

〔発明の効果〕〔The invention's effect〕

第１表に示される結果から、本発明リボン箔材１〜７
は、いずれも箔材への加工直後と加工後 ６ヶ月経過後の硬さにほとんど変化がなく、時間経過後
も変らない剛性を保持するのに対して、従来純Auリボン
箔材に相当する比較リボン箔材１では経時的軟化が著し
く、また合金成分としてBeとCaを共存含有しない比較リ
ボン箔材2,3でも経時的軟化現象の発生が避けられず、
これらの結果からBeとCaが合金成分として共存含有して
はじめて所望の経時的硬さ不変効果を確保することがで
きることが明らかである。From the results shown in Table 1, the ribbon foil materials 1 to 7 of the present invention
Are both immediately after and after processing the foil material. Hardness after 6 months hardly changes, and rigidity that does not change even after time passes is maintained, whereas the comparative ribbon foil material 1 equivalent to the conventional pure Au ribbon foil material shows remarkable softening with time, and Even with comparative ribbon foil materials 2 and 3 that do not contain Be and Ca as alloy components, softening phenomenon with time cannot be avoided,
From these results, it is clear that the desired temporal hardness invariant effect can be ensured only when Be and Ca are contained together as alloy components.

上述のように、この発明のAu合金リボン箔材は、箔材
に加工された時点の加工硬さ（剛性）を時間経過に関係
なく保持するので、これを半導体装置の自動組立てにろ
う材として用いた場合、ろう材の供給が著しく安定する
ことから、ろう付け作業を円滑に、かつ歩留りよく行な
うことが可能となるのである。As described above, since the Au alloy ribbon foil material of the present invention retains the processing hardness (rigidity) at the time of being processed into the foil material regardless of the elapsed time, this is used as a brazing material for automatic assembly of semiconductor devices. When used, the supply of the brazing filler metal is remarkably stable, so that the brazing work can be carried out smoothly and with high yield.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】合金成分として、 Be:1〜45ppm,Ca:1〜45ppm, を有し、残りが99.99重量％以上のAuと微量の不可避不
純物からなる組成を有するAu合金で構成することを特徴
とする経時的硬さ低下のない半導体装置のろう付け用Au
合金リボン箔材。1. An alloy of Au having a composition of Be: 1 to 45 ppm, Ca: 1 to 45 ppm, and the balance of 99.99% by weight or more of Au and a trace amount of unavoidable impurities as alloy components. Au for brazing semiconductor devices, which does not show the characteristic decrease in hardness over time
Alloy ribbon foil material.
JP62237041A 1987-09-21 1987-09-21 Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time Expired - Lifetime JP2536546B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237041A JP2536546B2 (en) 1987-09-21 1987-09-21 Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237041A JP2536546B2 (en) 1987-09-21 1987-09-21 Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time

Publications (2)

Publication Number Publication Date
JPS6478698A JPS6478698A (en) 1989-03-24
JP2536546B2 true JP2536546B2 (en) 1996-09-18

Family

ID=17009527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237041A Expired - Lifetime JP2536546B2 (en) 1987-09-21 1987-09-21 Au alloy ribbon foil material for brazing semiconductor devices that does not decrease in hardness over time

Country Status (1)

Country Link
JP (1) JP2536546B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2580925B2 (en) * 1991-01-10 1997-02-12 株式会社豊田自動織機製作所 Forklift engine room
JPH04304335A (en) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp Pure gold foil for noble metal card
JP2740587B2 (en) * 1991-07-18 1998-04-15 工業技術院長 Micro composite electrode and method of manufacturing the same
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105968A (en) * 1977-02-26 1978-09-14 Tanaka Electronics Ind Gold wire for bonding semiconductor
JPS5826662B2 (en) * 1977-03-11 1983-06-04 田中電子工業株式会社 Gold wire for bonding semiconductor devices
JPS58154242A (en) * 1982-03-10 1983-09-13 Mitsubishi Metal Corp Fine wire of gold alloy for bonding semiconductor element

Also Published As

Publication number Publication date
JPS6478698A (en) 1989-03-24

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