JP2536218B2 - Heat sink mounted semiconductor device - Google Patents
Heat sink mounted semiconductor deviceInfo
- Publication number
- JP2536218B2 JP2536218B2 JP4610590A JP4610590A JP2536218B2 JP 2536218 B2 JP2536218 B2 JP 2536218B2 JP 4610590 A JP4610590 A JP 4610590A JP 4610590 A JP4610590 A JP 4610590A JP 2536218 B2 JP2536218 B2 JP 2536218B2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor device
- case
- package base
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、絶縁体のパッケージ基体の中央凹所に半導
体素子をマウントして気密封止し、さらに、該パッケー
ジ基体の側壁上面にヒートシンクを取付け、このヒート
シンクのある側を上にし、基体下面を基板に密着して取
付けるフェイスアップ型の放熱板搭載型半導体装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention mounts a semiconductor element in a central recess of an insulating package base to hermetically seal it, and further installs a heat sink on the side wall upper surface of the package base. The present invention relates to a face-up type radiator plate-mounted semiconductor device in which the side with this heat sink is attached and the lower surface of the base is attached in close contact with the substrate.
第３図は従来のフェイスダウン取付構造のヒートシン
ク付き半導体装置の断面図である。第３図において、絶
縁体のパッケージ基体（ケースという）１の中央凹所底
部に半導体素子４がマウントされ、キャップ６でケース
凹所開口は蓋をされ、接着剤で気密封止されている。し
かして、このケースの開口のあるフェイス面を下に向け
て（フェイスダウン）回路基板に取付けるために、キャ
ップ６の周辺のケース側壁部上面（開口のある方の面）
から外部端子２が垂直に外部に引出されている。また、
ヒートシンク７は、凹所開口のある方向と反対側のケー
ス裏面（下面）に接着剤により接着されている。接着剤
の他に金属ろう材または機械的に接着する場合もある。
このヒートシンクを上にして、開口面を下にし、かつ、
外部端子を下方に向けた図の様なフェイスダウンの形で
回路基板に取付けられるのである。FIG. 3 is a sectional view of a conventional semiconductor device with a heat sink having a face-down mounting structure. In FIG. 3, a semiconductor element 4 is mounted on the bottom of a central recess of an insulating package base (referred to as a case) 1, a case recess opening is covered with a cap 6, and the case is hermetically sealed with an adhesive. Then, in order to attach the face surface having the opening of this case to the circuit board with the face surface having the opening facing downward (face down), the upper surface of the case side wall portion around the cap 6 (the surface having the opening)
The external terminal 2 is vertically pulled out from the. Also,
The heat sink 7 is adhered by an adhesive to the back surface (lower surface) of the case opposite to the direction in which the recess opening is formed. In addition to the adhesive, a metal brazing material or mechanical bonding may be used.
With this heat sink up, the opening side down, and
The external terminals are attached to the circuit board in a face-down manner as shown in the figure.
金属ろう材を用いる場合は、ケース底面を金属板で形
成し、この金属板の裏面にヒートシンクを接着する。金
属板には放熱効果を重視する場合は、銅・タングステン
を用い、コストを重視する場合は、モリブデンやコバー
ルが用いられる。ヒートシンクの素材には、アルミニウ
ム・銅が多く用いられ、アルミニウム製ヒートシンクを
金属ろう材で接着する場合は、ヒートシンクの接着部に
銅を接続して用いる。樹脂系の接着材を用いる場合は、
金属板等が必要なく、構造が簡単になる。接着剤には、
一般にエポキシ系、シリコーン系の熱硬化性樹脂が用い
られている。When a metal brazing material is used, the bottom surface of the case is formed of a metal plate, and the heat sink is bonded to the back surface of the metal plate. Copper / tungsten is used for the metal plate when the heat radiation effect is important, and molybdenum or kovar is used when the cost is important. Aluminum and copper are often used as the material of the heat sink, and when the aluminum heat sink is bonded with a metal brazing material, copper is used by connecting to the bonding portion of the heat sink. When using a resin-based adhesive,
The structure is simple because no metal plate is required. For the adhesive,
Generally, epoxy or silicone thermosetting resins are used.
また、最近では、半導体素子の大型化，半導体装置の
小型化に対応するため、第４図の断面図に示すようにケ
ース１の裏面に外部端子２を接続し、ケース開口のある
フェイス面を上に向け（フェイスアップ）、フェイス面
にヒートシンク７を搭載した構造が用いられるようにな
ってきた。Further, recently, in order to cope with the increase in the size of semiconductor elements and the size reduction of semiconductor devices, external terminals 2 are connected to the back surface of the case 1 as shown in the sectional view of FIG. A structure in which a heat sink 7 is mounted on the face surface facing upward (face up) has come to be used.
上述した従来のヒートシンク搭載型半導体装置は、フ
ェイスダスンタイプの場合は、ケース開口が外部端子に
囲まれているため、搭載可能な半導体素子の大きさが、
外部端子により制限されるという問題がある。また、フ
ェイスアップタイプの場合は半導体素子で発生した熱
は、半導体素子が固着されたケース底面を横に伝わり、
それからケース側壁部を通ってヒートシンクに伝わる。
そのため、半導体素子から、ヒートシンクまでの熱抵抗
が大きくなり、半導体素子からケース底面部を縦に通
り、直接ヒートシンクに熱が伝わるフェイスダウンタイ
プに比べ熱抵抗が大きくなるという欠点があった。In the case of the face-down type, the conventional heatsink-mounted semiconductor device described above has a case opening surrounded by external terminals, so that the size of a mountable semiconductor element is
There is a problem that it is limited by the external terminal. Also, in the case of face-up type, the heat generated in the semiconductor element is transmitted laterally through the bottom surface of the case where the semiconductor element is fixed,
Then, it is transmitted to the heat sink through the side wall of the case.
Therefore, the thermal resistance from the semiconductor element to the heat sink becomes large, and the thermal resistance becomes large as compared with the face-down type in which heat is directly transmitted to the heat sink by passing vertically from the semiconductor element to the bottom surface of the case.
上記課題に対し本発明のヒートシンク搭載型半導体装
置は、中央凹所底部に半導体素子がマウントされた絶縁
体のパッケージ基体の下面に、高熱伝導率の材料からな
る伝熱基板を金属ろう材で接着して、パッケージ基体の
下面側の熱抵抗を小さくし、前記凹所底部の半導体素子
から発生した熱を、パッケージ基体の下面側を熱抵抗少
なく横に通し、側壁上面に固着されたヒートシンクへ効
率よく逃がすようにしている。To solve the above problems, in the heat sink mounted semiconductor device of the present invention, a heat transfer substrate made of a material having a high thermal conductivity is bonded with a metal brazing material to the lower surface of the package base of the insulator in which the semiconductor element is mounted on the bottom of the central recess. Then, the thermal resistance on the lower surface side of the package base is reduced, and the heat generated from the semiconductor element at the bottom of the recess is passed through the lower surface side of the package base laterally with less thermal resistance, and is efficiently transferred to the heat sink fixed to the upper surface of the sidewall. I often try to escape.
つぎに本発明を実施例により説明する。 Next, the present invention will be described with reference to examples.
第１図は本発明の第１の実施例の片半分の断面図であ
る。第１図において、外形約43×43mmで208本の外部端
子が格子状に配列されたピングリットアレータイプのア
ルミナセラミック製のパッケージ基体（ケースという）
１は、配線パターンと、外部リード２および凹所開口周
辺を取巻くシールリング３の取付け部、ならびに、ケー
ス裏面（開口のある方向と反対の面）の高熱伝導率の伝
熱基板の取付け面は、タングステンメタライズを印刷後
焼成をし、その後ニッケルメッキを施したろう付け面を
形成し、このろう付け面にそれぞれ、外部端子2,シール
リング3,高熱伝導率の伝熱基板８がAg/Cuろう材９でろ
う付けされ、その後さらに、ニッケルメッキ，金メッキ
が施されている。つぎに、半導体素子４がケース凹所底
部にAu/Siろう材で固着され、ワイヤ５が素子電極と配
線パターンとの間に接続され、ニッケル・クラッドコバ
ール製のキャップ６がシールリング３にシームウェルド
法で溶接気密封止されている。最後に、凹所開口周辺の
ケース側壁部上面には、アルミニウム製のヒートシンク
７を熱硬化性エポキシ樹脂製接着剤で接着されている。
なお、ケースに用いたアルミナ・セラミックの熱伝導率
は、約20W/℃mmで、高熱伝導率の伝熱基板８は、熱伝導
率約200W/℃mmの窒化アルミニウム・セラミックを用い
た。FIG. 1 is a sectional view of one half of the first embodiment of the present invention. Referring to FIG. 1, a package base made of alumina ceramic of a pingrit array type, which has an outer shape of about 43 × 43 mm and has 208 external terminals arranged in a lattice, is called a case.
1 is the wiring pattern, the mounting portion of the outer lead 2 and the seal ring 3 surrounding the opening of the recess, and the mounting surface of the heat transfer board having a high thermal conductivity on the back surface of the case (the surface opposite to the opening direction). After printing the tungsten metallization, it is fired, and then a nickel-plated brazing surface is formed, and the external terminal 2, the seal ring 3, and the heat transfer substrate 8 with high thermal conductivity are Ag / Cu on the brazing surface, respectively. It is brazed with a brazing material 9, and then nickel-plated and gold-plated. Next, the semiconductor element 4 is fixed to the bottom of the case recess with Au / Si brazing material, the wire 5 is connected between the element electrode and the wiring pattern, and the nickel-clad Kovar cap 6 is seamed to the seal ring 3. Welded and hermetically sealed by the weld method. Finally, the heat sink 7 made of aluminum is adhered to the upper surface of the side wall of the case around the opening of the recess with a thermosetting epoxy resin adhesive.
The thermal conductivity of the alumina-ceramic used in the case was about 20 W / ° C mm, and the heat transfer substrate 8 having a high thermal conductivity was aluminum nitride ceramic with a thermal conductivity of about 200 W / ° C mm.
第２図は、本発明の第２実施例を示す断面図である。
本実施例では、高熱伝導率の伝熱基板18の外形を、外部
端子２のろう付部最内周より小さくしている。このよう
に、伝熱基板18の外形を第１図の例より小さくすること
により、コストが安くなる。但し熱抵抗は、２〜５％悪
くなる。FIG. 2 is a sectional view showing a second embodiment of the present invention.
In this embodiment, the outer shape of the heat transfer board 18 having high thermal conductivity is smaller than the innermost circumference of the brazing portion of the external terminal 2. In this way, the cost is reduced by making the outer shape of the heat transfer board 18 smaller than that of the example of FIG. However, the thermal resistance becomes worse by 2 to 5%.
本発明を採用することにより、フェイスアップタイプ
のヒートシンク搭載型半導体装置において、半導体素子
からヒートシンクまでの熱抵抗を下げることができる。
従来の構造では、熱抵抗が風速3m/sで約６〜７℃/Wであ
ったのに対し、本実施例では、風速3m/sで約４〜５℃/W
と、約20〜40％も低減できた。By adopting the present invention, in a face-up type heat sink mounted semiconductor device, the thermal resistance from the semiconductor element to the heat sink can be reduced.
In the conventional structure, the thermal resistance was about 6 to 7 ° C./W at a wind speed of 3 m / s, whereas in the present embodiment, it is about 4 to 5 ° C./W at a wind speed of 3 m / s.
And, it was reduced by about 20-40%.
第１図は本発明の第１の実施例の片半分の断面図、第２
図は本発明の第２の実施例の片半分の断面図、第３図は
従来のフェイスダウンタイプのヒートシンク搭載型半導
体装置の片半分の断面図、第４図は従来のフェイスアッ
プタイプのヒートシンク搭載型半導体装置の断面図であ
る。 １……パッケージ基体、２……外部端子、３……シール
リング、４……半導体素子、５……ワイヤ、６……蓋
（キャップ）、７……ヒートシンク、８……伝熱基板、
９……金属ろう材。FIG. 1 is a sectional view of one half of the first embodiment of the present invention,
FIG. 4 is a sectional view of one half of the second embodiment of the present invention, FIG. 3 is a sectional view of one half of a conventional face-down type heat sink mounted semiconductor device, and FIG. 4 is a conventional face-up type heat sink. It is a sectional view of a mounting type semiconductor device. 1 ... Package base, 2 ... External terminal, 3 ... Seal ring, 4 ... Semiconductor element, 5 ... Wire, 6 ... Lid (cap), 7 ... Heat sink, 8 ... Heat transfer board,
9 ... Metal brazing material.
Claims (1)
子がマウントされ、前記凹所開口に蓋をして気密封止さ
れ、さらに、前記パッケージ基体の側壁上面にヒートシ
ンクが取付けられた半導体装置において、前記パッケー
ジ基体の下面には、この基体の材料より熱伝導率の高い
材料からできている伝熱基板が金属ろう材を用いて接着
されていることを特徴とするヒートシンク搭載型半導体
装置。1. A semiconductor device in which a semiconductor element is mounted in a recess of an insulating package base, the opening of the recess is covered and hermetically sealed, and a heat sink is attached to an upper surface of a side wall of the package base. 2. A heat sink mounting type semiconductor device according to claim 1, wherein a heat transfer substrate made of a material having a higher thermal conductivity than the material of the base body is bonded to the lower surface of the package base body by using a metal brazing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4610590A JP2536218B2 (en) | 1990-02-26 | 1990-02-26 | Heat sink mounted semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4610590A JP2536218B2 (en) | 1990-02-26 | 1990-02-26 | Heat sink mounted semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03248449A JPH03248449A (en) | 1991-11-06 |
| JP2536218B2 true JP2536218B2 (en) | 1996-09-18 |
Family
ID=12737714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4610590A Expired - Lifetime JP2536218B2 (en) | 1990-02-26 | 1990-02-26 | Heat sink mounted semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2536218B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838064A (en) * | 1994-04-22 | 1998-11-17 | Nec Corporation | Supporting member for cooling means and electronic package using the same |
| KR100352116B1 (en) * | 1996-12-06 | 2002-12-16 | 앰코 테크놀로지 코리아 주식회사 | Structure of semiconductor package capable of easily radiating heat |
| KR100298690B1 (en) * | 1998-09-09 | 2001-10-27 | 마이클 디. 오브라이언 | Semiconductor device |
-
1990
- 1990-02-26 JP JP4610590A patent/JP2536218B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03248449A (en) | 1991-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5293301A (en) | Semiconductor device and lead frame used therein | |
| US5710695A (en) | Leadframe ball grid array package | |
| US5644163A (en) | Semiconductor device | |
| US7994633B2 (en) | Substrate for electrical device | |
| US5521429A (en) | Surface-mount flat package semiconductor device | |
| US5933709A (en) | Semiconductor package and method for fabricating same | |
| JP2536218B2 (en) | Heat sink mounted semiconductor device | |
| JPH09307051A (en) | Semiconductor device sealed by resin and method of manufacturing it | |
| JPH04114455A (en) | Semiconductor device and mounting structure thereof | |
| JPH0661408A (en) | Surface mount type semiconductor device | |
| JPH08162575A (en) | Semiconductor device and its manufacture | |
| JPS6130742B2 (en) | ||
| JPH05206320A (en) | Multi-chip module | |
| JP2503690B2 (en) | Heat sink mounted semiconductor device | |
| JP3454192B2 (en) | Lead frame, resin-sealed semiconductor device using the same, and method of manufacturing the same | |
| JP2907187B2 (en) | Bare chip mounting method and semiconductor integrated circuit device | |
| JP2646994B2 (en) | Pin grid array with heat sink | |
| CN220796734U (en) | Half-bridge power module packaging structure | |
| JP3013612B2 (en) | Semiconductor device | |
| JPS6120768Y2 (en) | ||
| JP3502511B2 (en) | Semiconductor device | |
| JPH0521649A (en) | Semiconductor device | |
| KR960000149Y1 (en) | Semiconductor device | |
| KR19990033212A (en) | Array type semiconductor package using lead frame and manufacturing method thereof | |
| JPH06104356A (en) | Surface mounting semiconductor device |