JP2518540B2 - Inspection device for internal interconnection of semiconductor integrated circuits - Google Patents
Inspection device for internal interconnection of semiconductor integrated circuitsInfo
- Publication number
- JP2518540B2 JP2518540B2 JP5313320A JP31332093A JP2518540B2 JP 2518540 B2 JP2518540 B2 JP 2518540B2 JP 5313320 A JP5313320 A JP 5313320A JP 31332093 A JP31332093 A JP 31332093A JP 2518540 B2 JP2518540 B2 JP 2518540B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- semiconductor integrated
- internal interconnection
- laser beam
- integrated circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体集積回路チップ上
の欠陥の検査装置に関し、特に半導体集積回路チップ上
の内部相互配線の欠陥をレーザビームまたは電子ビーム
やイオンビームを用いて検査する装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for inspecting defects on a semiconductor integrated circuit chip, and more particularly to a device for inspecting defects in internal interconnections on a semiconductor integrated circuit chip using a laser beam, an electron beam or an ion beam. It is a thing.
【０００２】[0002]
【従来の技術】レーザビームを用いる類似の従来法（第
１の従来例）では図３にその概念図を示すように、半導
体集積回路チップ試料にレーザビームを照射し、その結
果半導体内部に発生する電子−正孔対（電子１８、正孔
１９）を電流の変化として検出しようとするものでＯＢ
ＩＣ（ｏｐｔｉｃａｌ ｂｅａｍ ｉｎｄｕｃｅｄ ｃ
ｕｒｒｅｎｔ）法としてよく知られている。この方法で
は試料は半導体あるいは半導体を含むものとしている。2. Description of the Related Art In a similar conventional method using a laser beam (first conventional example), a semiconductor integrated circuit chip sample is irradiated with a laser beam as shown in the conceptual diagram of FIG. The electron-hole pair (electron 18, hole 19) that is to be detected is detected as a change in current.
IC (optical beam induced c)
well known as the current method. In this method, the sample is assumed to contain a semiconductor or a semiconductor.
【０００３】また、内部相互配線の欠陥検出法としては
図４に示すように半導体集積回路の内部相互配線に電流
を流した状態でレーザビームを照射し、温度上昇による
抵抗変化に基ずく内部相互配線に流れる電流の変化を検
知することで、前記内部相互配線の欠陥を検出する装置
（第２の従来例）がある。Further, as a method of detecting a defect in an internal interconnection, as shown in FIG. 4, a laser beam is radiated in a state in which a current is applied to the internal interconnection of a semiconductor integrated circuit, and the internal interconnection is caused based on a resistance change due to a temperature rise. There is a device (second conventional example) that detects a defect in the internal interconnection by detecting a change in current flowing through the interconnection.
【０００４】[0004]
【発明が解決しようとする課題】図４で説明した従来の
欠陥検出法（第２の従来例）では、検出された欠陥がＯ
ＢＩＣ電流（第１の従来例）であるのかあるいは抵抗変
化によるのか区別が必要である。ＯＢＩＣの現象が起こ
っている場合にはレーザ照射によってｐ−ｎ接合部分に
電子と正孔が現れ、電流が増加する方向に変化するので
輝度変化で表示すると明るく見える（電流が増加する方
を明るくするとした場合）。逆に局所的な温度上昇が起
こっている場合には欠陥により抵抗が高くなる方向であ
るため電流は減少して暗くなり、区別することは可能で
ある。しかし、両方が同一場所に現れた場合、目視での
判断は難しい。In the conventional defect detection method (second conventional example) described with reference to FIG. 4, the detected defect is O
It is necessary to distinguish whether it is a BIC current (first conventional example) or a resistance change. When the OBIC phenomenon occurs, electrons and holes appear at the pn junction due to laser irradiation and change in the direction in which the current increases. Therefore, it appears bright when the brightness is changed (the brighter the current increases). If so). On the contrary, when a local temperature rise occurs, the current is decreased and becomes dark because the resistance is increased due to the defect, and it is possible to distinguish. However, when both appear in the same place, it is difficult to visually judge.
【０００５】[0005]
【課題を解決するための手段】上述した問題点を解決す
るために、半導体集積回路の内部相互配線に電流を流し
た状態でレーザビームを照射し、内部相互配線に流れる
電流の変化を検知することで、前記内部相互配線の欠陥
を検出する装置において、チップに照射するレーザビー
ムによって電子−正孔対が励起しないレーザビームの波
長範囲を選択する手段を備えることを特徴とする。In order to solve the above-mentioned problems, a laser beam is radiated in a state where a current is passed through an internal interconnection of a semiconductor integrated circuit, and a change in the current flowing through the internal interconnection is detected. Thus, the device for detecting a defect in the internal interconnection has means for selecting a wavelength range of a laser beam in which the electron-hole pairs are not excited by the laser beam irradiating the chip.
【０００６】[0006]
【実施例】次に本発明の実施例を図１を参照して説明す
る。図１は第２の従来例の装置構成においてレーザ発生
部を波長可変のレーザ発生装置に変えたものである。チ
ップ１に電圧供給源９から電圧を供給した状態で、μｍ
オーダからサブμｍオーダに絞ったレーザビームをチッ
プ１上に走査しながら照射する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a second conventional example in which the laser generator is replaced with a wavelength tunable laser generator. When voltage is supplied from the voltage supply source 9 to the chip 1,
A laser beam focused from the order to the sub μm order is irradiated while scanning the chip 1.
【０００７】このとき波長可変レーザを用いてＯＢＩＣ
法で応答しない波長範囲を選択する。ＯＢＩＣ法が応答
しない波長範囲とはＳｉの場合１．３７６μｍ程度以上
の波長範囲であり、これをレーザビームのチップ１上の
各点での電流の変化を変動電流検出／増幅部８で検出
し、信号処理／画像処理／システム制御部７で信号を位
置と輝度の情報に変換したのちＣＲＴ１５上に、輝度が
電流値の変化に対応した像として表示する。欠陥がある
箇所は熱伝導が悪いためその付近の抵抗が増大する。従
って電流の変化に対応したコントラストの変化が観測で
きる。At this time, an OBIC is used by using a wavelength tunable laser.
Select a wavelength range that does not respond by The wavelength range in which the OBIC method does not respond is a wavelength range of about 1.376 μm or more in the case of Si, and this is detected by the fluctuating current detecting / amplifying unit 8 for the change in the current at each point on the chip 1 of the laser beam. The signal processing / image processing / system control unit 7 converts the signal into position and brightness information, and then displays it on the CRT 15 as an image in which the brightness corresponds to the change in the current value. Since the heat conduction is poor at the defective portion, the resistance in the vicinity increases. Therefore, a change in contrast corresponding to a change in current can be observed.
【０００８】欠陥が表面に出ておらず光学顕微鏡像や走
査型電子顕微鏡像では検出できない欠陥が検出できる点
や、検出の感度を上げるためにレーザを照射しない状態
での電流を出来る限り減らすために、温度制御部１０を
設け外部からチップの温度を制御し最も電流の小さい温
度においてこの検査を実施することも有効である点等は
第２の従来例と同様である。In order to improve the detection sensitivity, it is possible to detect a defect that is not present on the surface and cannot be detected by an optical microscope image or a scanning electron microscope image, and to reduce the current as much as possible in the absence of laser irradiation in order to increase the detection sensitivity. In addition, it is similar to the second conventional example in that it is also effective to provide the temperature control unit 10 to control the temperature of the chip from the outside and perform this inspection at the temperature with the smallest current.
【０００９】図２は本発明の検査装置の第２の実施例を
示す図である。本実施例は、図１での電圧供給源９をＬ
ＳＩテスタ１６に置き換えたことが特徴である。その他
の構成は、図１と同様であり、同一の構成要素には、同
一の照合番号を付して示してあるが、レーザ発生部６、
レーザ走査部５、顕微鏡部４、信号処理／画像処理／シ
ステム制御部７、温度制御部１０は図示を省略してあ
る。FIG. 2 is a diagram showing a second embodiment of the inspection apparatus of the present invention. In this embodiment, the voltage supply source 9 in FIG.
The characteristic is that the SI tester 16 is replaced. Other configurations are the same as those in FIG. 1, and the same components are shown with the same reference numbers, but the laser generator 6,
The laser scanning unit 5, the microscope unit 4, the signal processing / image processing / system control unit 7, and the temperature control unit 10 are not shown.
【００１０】ＬＳＩテスタ３６は、電流伝送路１３によ
り、図示のようにパッケージ２、変動電流検出／増幅部
８に接続され、また、信号線３８によりパッケージ２に
接続されている。The LSI tester 36 is connected to the package 2 and the fluctuating current detecting / amplifying unit 8 as shown in the figure by the current transmission path 13, and is also connected to the package 2 by the signal line 38.
【００１１】本実施例によれば、ＬＳＩテスタにより電
源供給および信号供給を行ないながらこの検査を実施す
ることで、特別な動作状態でしか電流が流れないような
チップ上の内部相互配線に対しても検査が可能になる。According to the present embodiment, by carrying out this inspection while supplying power and signals by the LSI tester, it is possible to carry out the internal interconnection on the chip in which a current flows only in a special operation state. Can also be inspected.
【００１２】[0012]
【発明の効果】以上説明したように、本発明の検査装置
では、試料に照射するレーザビームをＯＢＩＣ法で応答
しない波長範囲を選択することによって、特に素子部で
は温度上昇に伴う電流変化によって生じた欠陥のみが検
出されることからＯＢＩＣ像と区別する必要がなくなっ
た。As described above, in the inspection apparatus of the present invention, a laser beam for irradiating a sample is generated by selecting a wavelength range in which the laser beam does not respond by the OBIC method. It is not necessary to distinguish it from the OBIC image because only the defects that have been detected are detected.
【図１】本発明の第１の実施例を示す装置構成図FIG. 1 is a device configuration diagram showing a first embodiment of the present invention.
【図２】本発明の第２の実施例を示す装置構成図FIG. 2 is a device configuration diagram showing a second embodiment of the present invention.
【図３】第１の従来例を示す概念図FIG. 3 is a conceptual diagram showing a first conventional example.
【図４】第２の従来例を示す装置構成図（本発明は第２
の従来例のレーザ発生部を波長可変レーザ発生装置に変
えたものである。）FIG. 4 is a device configuration diagram showing a second conventional example (the present invention is the second
The conventional laser generator is replaced with a wavelength tunable laser generator. )
１ チップ ２ パッケージ ３ 試料台 ４ 顕微鏡部 ５ レーザ走査部 ６ 波長可変レーザ発生部 ７ 信号処理／画像処理／システム制御部 ８ 変動電流検出／増幅部 ９ 電圧供給源 １０ 温度制御部 １１ 光伝送路 １２ 熱媒体用パイプ １３ 電流伝送路（電源線） １４ 信号線 １５ ＣＲＴ １６ レーザ光 １７ 半導体資料 １８ 電子 １９ 正孔 ２０ 電圧供給減 ２１ チップ ２２ パッケージ ２３ 試料台 ２４ 顕微鏡部 ２５ レーザ走査部 ２６ 波長可変レーザ発生部 ２７ 信号処理／画像処理／システム制御部 ２８ 変動電流検出／増幅部 ２９ 電圧供給源 ３０ 温度制御部 ３１ 光伝送路 ３２ 熱媒体用パイプ ３３ 電流伝送路（電源線） ３４ 信号線 ３５ ＣＲＴ ３６ ＬＳＩテスタ ３７ レーザビーム ３８ 信号線 1 Chip 2 Package 3 Sample Stage 4 Microscope Section 5 Laser Scanning Section 6 Wavelength Tunable Laser Generation Section 7 Signal Processing / Image Processing / System Control Section 8 Fluctuating Current Detection / Amplification Section 9 Voltage Supply Source 10 Temperature Control Section 11 Optical Transmission Line 12 Heat medium pipe 13 Current transmission line (power line) 14 Signal line 15 CRT 16 Laser light 17 Semiconductor material 18 Electron 19 Hole 20 Voltage supply reduction 21 Chip 22 Package 23 Sample stage 24 Microscope section 25 Laser scanning section 26 Wavelength tunable laser Generation unit 27 Signal processing / image processing / system control unit 28 Fluctuating current detection / amplification unit 29 Voltage supply source 30 Temperature control unit 31 Optical transmission line 32 Heat medium pipe 33 Current transmission line (power supply line) 34 Signal line 35 CRT 36 LSI tester 37 Laser beam 38 Signal line
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−151035（ＪＰ，Ａ) 特開 平２−132386（ＪＰ，Ａ) 特開 平５−326717（ＪＰ，Ａ) 特開 昭62−293735（ＪＰ，Ａ) 特開 平２−194541（ＪＰ，Ａ) 特開 平４−305954（ＪＰ，Ａ) ─────────────────────────────────────────────────── --- Continuation of the front page (56) Reference JP-A-63-151035 (JP, A) JP-A-2-132386 (JP, A) JP-A-5-326717 (JP, A) JP-A-62-1 293735 (JP, A) JP-A-2-194541 (JP, A) JP-A-4-305954 (JP, A)
Claims (1)
流した状態でレーザビームを照射し、内部相互配線に流
れる電流の変化を検知することで、前記内部相互配線の
欠陥を検出する装置において、チップに照射するレーザ
ビームによって電子−正孔対が励起しないレーザビーム
の波長範囲を選択する手段を備えることを特徴とする半
導体集積回路内部相互配線の検査装置。1. An apparatus for detecting a defect in an internal interconnection by irradiating a laser beam in a state where an electric current is passed through the internal interconnection of a semiconductor integrated circuit and detecting a change in the current flowing through the internal interconnection. An apparatus for inspecting internal interconnects of a semiconductor integrated circuit, comprising means for selecting a wavelength range of a laser beam in which electron-hole pairs are not excited by a laser beam applied to a chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313320A JP2518540B2 (en) | 1993-12-14 | 1993-12-14 | Inspection device for internal interconnection of semiconductor integrated circuits |
| US08/227,241 US5422498A (en) | 1993-04-13 | 1994-04-13 | Apparatus for diagnosing interconnections of semiconductor integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313320A JP2518540B2 (en) | 1993-12-14 | 1993-12-14 | Inspection device for internal interconnection of semiconductor integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07167924A JPH07167924A (en) | 1995-07-04 |
| JP2518540B2 true JP2518540B2 (en) | 1996-07-24 |
Family
ID=18039815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5313320A Expired - Lifetime JP2518540B2 (en) | 1993-04-13 | 1993-12-14 | Inspection device for internal interconnection of semiconductor integrated circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2518540B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970505B2 (en) * | 1995-11-21 | 1999-11-02 | 日本電気株式会社 | Semiconductor device wiring current observation method, inspection method and apparatus |
| JP2900877B2 (en) * | 1996-03-22 | 1999-06-02 | 日本電気株式会社 | Semiconductor device wiring current observation method, wiring system defect inspection method, and apparatus therefor |
| JP2962234B2 (en) | 1996-08-07 | 1999-10-12 | 日本電気株式会社 | Parasitic MIM structure location analysis method for semiconductor device and parasitic MIM structure location analysis method for Si semiconductor device |
| EP0990918B1 (en) * | 1998-09-28 | 2009-01-21 | NEC Electronics Corporation | Device and method for nondestructive inspection on semiconductor device |
| JP7186934B1 (en) | 2021-07-19 | 2022-12-09 | 浜松ホトニクス株式会社 | Semiconductor failure analysis device and semiconductor failure analysis method |
| CN113984787B (en) * | 2021-10-25 | 2023-06-09 | 江苏华兴激光科技有限公司 | Semiconductor defect distribution imaging detection device and detection method |
-
1993
- 1993-12-14 JP JP5313320A patent/JP2518540B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07167924A (en) | 1995-07-04 |
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