JP2502582B2 - Plasma CVD equipment - Google Patents
Plasma CVD equipmentInfo
- Publication number
- JP2502582B2 JP2502582B2 JP9250587A JP9250587A JP2502582B2 JP 2502582 B2 JP2502582 B2 JP 2502582B2 JP 9250587 A JP9250587 A JP 9250587A JP 9250587 A JP9250587 A JP 9250587A JP 2502582 B2 JP2502582 B2 JP 2502582B2
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- Prior art keywords
- temperature
- heater
- vacuum container
- sample
- plasma cvd
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Description
【発明の詳細な説明】 産業上の利用分野 本発明はプラズマCVD（Chemical Vapor Deposition）
法によって薄膜を形成する装置に関するものである。TECHNICAL FIELD The present invention relates to plasma CVD (Chemical Vapor Deposition).
The present invention relates to an apparatus for forming a thin film by the method.
従来の技術 プラズマCVD法は真空容器内に試料を保持し、形成す
べき薄膜の組成元素を含む化合物ガスを供給しながら、
高周波エネルギによって、前記化合物ガスを励起し、試
料表面をそのプラズマ雰囲気に配置することによって、
試料表面に薄膜を形成する方法がある。この方法は、プ
ラズマの活性を利用しているため、室温から400℃程度
までの低温で膜形成を行うことができるという特徴があ
る。Conventional technology The plasma CVD method holds a sample in a vacuum container and supplies a compound gas containing a composition element of a thin film to be formed,
By exciting the compound gas by high frequency energy and placing the sample surface in its plasma atmosphere,
There is a method of forming a thin film on the sample surface. Since this method utilizes the activity of plasma, it is characterized in that the film can be formed at a low temperature from room temperature to about 400 ° C.
プラズマCVD法による薄膜形成上の課題は、形成薄膜
の膜質および膜厚分布の制御並びにピンホールやパーテ
ィクルの付着等の膜欠陥の問題である。また生産面での
課題は堆積速度の向上である。The problems in forming a thin film by the plasma CVD method are the control of the film quality and the film thickness distribution of the formed thin film, and the problems of film defects such as pinholes and adhesion of particles. Another issue in production is the improvement of deposition rate.
従って、良質のプラズマCVD膜を均一に試料表面に形
成するためには、薄膜形成時の低温プラズマの分布およ
びその安定度，試料加熱分布並びに試料保持温度等のプ
ロセス条件に工夫が必要である。Therefore, in order to uniformly form a high-quality plasma CVD film on the sample surface, it is necessary to devise the process conditions such as the distribution and stability of the low-temperature plasma when forming the thin film, the sample heating distribution, and the sample holding temperature.
以下図面を参照しながら、上述した従来のプラズマCV
D装置の一例について説明する。The conventional plasma CV described above with reference to the drawings below.
An example of the D device will be described.
第２図に従来のプラズマCVD装置を示す。第２図にお
いて、１は真空状態の維持が可能な真空容器、２はプラ
ズマCVD膜が形成される試料、３は試料を保持するため
の試料台、４は内部に加熱用のヒータを有し、試料台３
を放射熱によって加熱することが可能でありかつ高周波
電力が供給される電極、５は高周波電源、６は真空容器
１内の圧力を大気圧以下の真空度に真空排気するための
真空ポンプ、７は真空容器１と真空ポンプ６の間を気密
に接続する真空排気用のパイプ、８は真空容器内の圧力
を、管内抵抗を可変にし、すなわち真空ポンプ６の有効
排気速度を可変にして制御するバタフライバルブ、９は
ガス流量制御装置を介して化合物ガスを真空容器１内に
導入するためのガスノズルである。FIG. 2 shows a conventional plasma CVD apparatus. In FIG. 2, 1 is a vacuum container capable of maintaining a vacuum state, 2 is a sample on which a plasma CVD film is formed, 3 is a sample stand for holding the sample, 4 is a heater for heating inside , Sample table 3
An electrode capable of heating radiant heat and being supplied with high frequency power, 5 is a high frequency power supply, 6 is a vacuum pump for evacuating the pressure in the vacuum container 1 to a vacuum degree of atmospheric pressure or less, 7 Reference numeral 8 denotes a vacuum exhaust pipe that hermetically connects between the vacuum container 1 and the vacuum pump 6, and 8 controls the pressure inside the vacuum container by varying the resistance inside the pipe, that is, by controlling the effective exhaust speed of the vacuum pump 6. A butterfly valve 9 is a gas nozzle for introducing a compound gas into the vacuum container 1 via a gas flow rate control device.
以上のように構成されたプラズマCVD装置について以
下その動作について説明する。The operation of the plasma CVD apparatus configured as described above will be described below.
まず真空容器１内を50mTorr以下の真空度まで真空排
気した後、試料２表面に形成すべき薄膜の組成元素を含
む化合物ガスをガスノズル９から流量制御装置で制御し
ながら真空容器１内に導入する。さらにバタフライバル
ブ８を操作し、100〜400mTorrに真空容器１内を制御す
る。また試料台３は、電極４表面からの輻射熱により加
熱されており、試料２は試料台３によって300℃程度の
温度に保持される。次に電極４に周波数400kHzの高周波
電力を供給することによって、前記化合物ガスを励起
し、試料２表面をそのプラズマ雰囲気にさらすことによ
って、試料２表面にプラズマCVD膜を形成する。First, the inside of the vacuum container 1 is evacuated to a vacuum degree of 50 mTorr or less, and then a compound gas containing a composition element of a thin film to be formed on the surface of the sample 2 is introduced into the vacuum container 1 from a gas nozzle 9 while being controlled by a flow controller. . Further, the butterfly valve 8 is operated to control the inside of the vacuum container 1 to 100 to 400 mTorr. The sample table 3 is heated by radiant heat from the surface of the electrode 4, and the sample table 3 is held at a temperature of about 300 ° C. by the sample table 3. Next, the compound gas is excited by supplying a high frequency power of 400 kHz to the electrode 4, and the surface of the sample 2 is exposed to the plasma atmosphere to form a plasma CVD film on the surface of the sample 2.
発明が解決しようとする問題点 ところで、膜形成時の試料２の温度は膜質に強く影響
するため試料台３の温度制御は極めて重要である。そこ
で試料台３の温度を電極４内のヒータにフィードバック
することが考えられるが、ヒータ電力供給ラインに高周
波電圧が電磁誘導されるのを防止するためには、電極４
内のヒータ設置構造が複雑になり、電極４のコストが高
くなる。また、特開昭60−21382に記載されているよう
に、ダストを低減する上で、電極４や試料台３の材質に
はアルミニウムがよく使われるが、この場合試料台３は
電極４からの輻射熱によって加熱しているため、熱伝達
率が悪く、所定の温度まで立上げるためには長時間を要
するという問題がある。また、電極４が立上げ動作時に
異常加熱しやすく、電極４が破損する可能性が大きい。
従って、試料台３のフィードバック制御は上記に示した
ように、非常に困難であるため、通常は、電極４内のヒ
ータに所定のシーケンスで電力を供給する方式が採られ
ている。しかしながら、電極４表面の温度制御が非常に
困難であり、温度変化に起因したダストも試料２表面に
付着しやすく、また電極４の異常加熱の保護機能がな
く、輻射熱による加熱であるため試料台３の容量や電極
間隔に起因して、立上げ時間も長い。また、電極４を一
定温度に保持できたとしても試料台３は温度変化が生じ
る。即ち、プラズマCVD膜の増加に伴い試料台３の温度
が上昇する。第３図に実験結果を示す。これは材質に依
存した放射率の変化に起因したものと思われる。従っ
て、膜質コントロールが、この場合も困難である。Problems to be Solved by the Invention By the way, since the temperature of the sample 2 during film formation strongly affects the film quality, temperature control of the sample table 3 is extremely important. Therefore, it is possible to feed back the temperature of the sample table 3 to the heater in the electrode 4. However, in order to prevent the high frequency voltage from being electromagnetically induced in the heater power supply line, the electrode
The heater installation structure inside becomes complicated, and the cost of the electrode 4 increases. Further, as described in JP-A-60-21382, aluminum is often used as a material for the electrodes 4 and the sample table 3 in order to reduce dust. Since it is heated by radiant heat, there is a problem that the heat transfer rate is poor and it takes a long time to rise to a predetermined temperature. Further, the electrode 4 is likely to be abnormally heated during the startup operation, and the electrode 4 is likely to be damaged.
Therefore, the feedback control of the sample table 3 is extremely difficult as described above, and therefore a method of supplying power to the heater in the electrode 4 in a predetermined sequence is usually adopted. However, it is very difficult to control the temperature of the surface of the electrode 4, dust due to the temperature change easily adheres to the surface of the sample 2, and there is no protection function for abnormal heating of the electrode 4, and the sample is heated by radiant heat. Due to the capacity of 3 and the electrode interval, the startup time is long. Even if the electrode 4 can be kept at a constant temperature, the temperature of the sample table 3 changes. That is, the temperature of the sample table 3 rises as the plasma CVD film increases. The experimental results are shown in FIG. This is probably due to the change in emissivity depending on the material. Therefore, control of the film quality is difficult in this case as well.
このように従来のプラズマCVD装置では、試料２の加
熱制御方式に起因し、膜質の再現性及び試料２表面の膜
欠陥制御性が悪く、また、装置稼動率や安全性の点でも
問題を有していた。As described above, in the conventional plasma CVD apparatus, due to the heating control method of the sample 2, the reproducibility of the film quality and the film defect controllability on the surface of the sample 2 are poor, and there are also problems in terms of equipment operation rate and safety. Was.
本発明は上記問題点に鑑み、試料２表面に形成する膜
の膜質再現性及び膜欠陥を低減すると共に、装置稼動率
及び安全性を向上することが可能なプラズマCVD装置を
提供することを目的とするものである。In view of the above problems, it is an object of the present invention to provide a plasma CVD apparatus capable of reducing the film quality reproducibility and film defects of the film formed on the surface of the sample 2 and improving the apparatus operating rate and safety. It is what
問題点を解決するための手段 上記問題点を解決するために、本発明に係る第１発明
は、真空状態の維持が可能な真空容器と、真空容器内を
減圧雰囲気にするための真空排気手段と真空容器内の圧
力を所定の値にするための圧力制御手段と、真空容器内
にガスを導入するためのガス供給手段と、真空容器内に
位置しており、内部に加熱用のヒータと温度測定用のシ
ース熱電対を有し、かつ高周波電力が印加される電極と
前記ヒータに電力を供給する電源と、シース熱電対の測
定温度を表示する温度測定装置と、電極と温度を一定温
度に制御するため、温度測定装置と電源とをフィードバ
ック制御する温度制御装置と、被加工物を保持する試料
台と、ヒータと電源との区間に配置したラインフィルタ
ーと、シース熱電対と温度測定装置との区間に配置した
ノイズフィルターとを備えたことを特徴とするものであ
る。Means for Solving the Problems In order to solve the above problems, a first invention according to the present invention relates to a vacuum container capable of maintaining a vacuum state, and a vacuum evacuation means for creating a reduced pressure atmosphere in the vacuum container. And a pressure control means for setting the pressure in the vacuum container to a predetermined value, a gas supply means for introducing a gas into the vacuum container, a heater located inside the vacuum container and for heating. An electrode having a sheath thermocouple for temperature measurement and supplying electric power to the electrode to which high frequency power is applied, the heater, a temperature measuring device for displaying the measured temperature of the sheath thermocouple, and a constant temperature for the electrode and the temperature. Temperature control device for feedback control of the temperature measuring device and the power source, the sample stage for holding the workpiece, the line filter arranged in the section between the heater and the power source, the sheath thermocouple and the temperature measuring device. In the section with And a noise filter arranged.
また、本発明に係る第２発明は、真空状態の維持が可
能な真空容器と、真空容器内を減圧雰囲気にするための
真空排気手段と、圧力制御手段と、ガス供給手段と、真
空容器内に位置し、内部ヒータにより一定温度に保持さ
れ、かつ高周波電力が印加される電極と、内部に加熱用
のヒータと温度測定用のシース熱電対を有し、フィード
バック制御により加熱制御される試料台とを備えたこと
を特徴とするものである。A second aspect of the present invention is a vacuum container capable of maintaining a vacuum state, a vacuum evacuation unit for creating a reduced pressure atmosphere in the vacuum container, a pressure control unit, a gas supply unit, and a vacuum container. The sample stage, which is located in the center of the chamber and has a constant temperature maintained by an internal heater and to which high-frequency power is applied, a heater for heating and a sheath thermocouple for temperature measurement, and is controlled by feedback control. It is characterized by having and.
作用 本発明は上記した構成であって、第１発明によれば高
周波電力が印加される電極の内部にヒータとシース熱電
対を有し、シース熱電対で計測した温度を基に温度制御
装置によってヒータに電力を供給する電源に信号を与
え、フィードバック制御することによって、電極温度を
一定に保つことができる。ここで、ヒータに電力を供給
する系およびシース熱電対の系には、非常に大きい高周
波電圧が低温プラズマ発生時に電磁誘導されるが、各
々、ラインフィルターおよびノイズフィルターによって
この加熱制御方式への影響を防止することができる。Action The present invention has the above-described structure, and according to the first aspect of the present invention, a heater and a sheath thermocouple are provided inside an electrode to which high-frequency power is applied, and a temperature control device is provided based on a temperature measured by the sheath thermocouple. The electrode temperature can be kept constant by giving a signal to a power supply that supplies power to the heater and performing feedback control. Here, in the system for supplying electric power to the heater and the system for the sheath thermocouple, a very large high-frequency voltage is electromagnetically induced when a low-temperature plasma is generated. The line filter and the noise filter respectively affect the heating control system. Can be prevented.
また第２発明によれば、試料台の内部にヒータ及びシ
ース熱電対を有し、各々、フィードバック制御している
ため、試料台を応答性よく一定温度に保つことができ、
かつ内部にヒータがあるため試料台の立上げ時間を大き
く短縮することが可能である。According to the second aspect of the invention, since the heater and the sheath thermocouple are provided inside the sample table and each is feedback-controlled, the sample table can be kept responsive with a constant temperature.
Moreover, since the heater is provided inside, it is possible to greatly shorten the startup time of the sample table.
実施例 以下本発明の一実施例のプラズマCVD装置について図
面を参照しながら説明する。Embodiment A plasma CVD apparatus according to an embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明の第１の実施例におけるプラズマCV
D装置の概略断面図を示すものである。FIG. 1 shows the plasma CV in the first embodiment of the present invention.
It is a schematic sectional drawing of a D apparatus.
第１図において、31は真容状態の維持が可能な真空容
器、32はプラズマCVD膜が形成される被加工物としての
試料、33は内部に加熱用のヒータ33aと温度測定用のシ
ース熱電対33bを有し、かつ高周波電力が印加される電
極、34は前記ヒータ33aに電力を供給する電源、35はシ
ース熱電対33bの測定温度を表示する温度測定装置、36
は電極33の温度を一定温度に制御するため、温度測定装
置35と電源34とをフィードバック制御する温度制御装
置、37はラインフィルター、38はノイズフィルター、39
は内部に加熱用のヒータ39aと温度測定用の熱電対39bを
有し、フィードバック制御により加熱制御される試料
台、40は加熱制御装置、41は真空容器31内の圧力を大気
圧以下の真空度に真空排気するための真空ポンプ、42は
真空容器31と真空ポンプ41との間を気密に接続するパイ
プ、43は真空容器31内の圧力制御を行なうための圧力制
御装置、44は真空容器31内に化合物ガスを導入するため
のガス流量制御装置、45は高周波電源である。In FIG. 1, 31 is a vacuum container capable of maintaining a true state, 32 is a sample as a workpiece on which a plasma CVD film is formed, 33 is a heater 33a for heating and a sheath thermoelectric for temperature measurement. An electrode having a pair 33b and to which high frequency power is applied, 34 is a power source for supplying power to the heater 33a, 35 is a temperature measuring device for displaying the measured temperature of the sheath thermocouple 33b, 36
Is a temperature control device for feedback-controlling the temperature measuring device 35 and the power supply 34 to control the temperature of the electrode 33 to a constant temperature, 37 is a line filter, 38 is a noise filter, 39
Has a heater 39a for heating and a thermocouple 39b for temperature measurement inside, and is a sample stage that is heated and controlled by feedback control, 40 is a heating control device, 41 is a vacuum of the pressure inside the vacuum container 31 below atmospheric pressure. A vacuum pump for evacuating each time, a pipe 42 for air-tightly connecting the vacuum container 31 and the vacuum pump 41, a pressure control device 43 for controlling the pressure in the vacuum container 31, and a vacuum container 44. A gas flow rate control device for introducing the compound gas into 31 and 45 are high frequency power supplies.
以上のように構成されたプラズマCVD装置についてそ
の動作を説明する。The operation of the plasma CVD apparatus configured as described above will be described.
まず真空容器31内を真空ポンプ41によって30mTorr以
下の真空度まで真空排気した後、試料32表面に形成すべ
き薄膜の組成元素を含む化合物ガス、すなわち、モノシ
ラン（SiH4）、アンモニア（NH3）、窒素（N2）の混合
ガスを各々400sccM,500sccM,1600sccMのガス流量で、ガ
ス流量制御装置44より真空容器31内に導入し、かつ真空
容器31内の圧力を圧力制御装置43により300mTorrに保持
する。First, the inside of the vacuum container 31 is evacuated to a vacuum degree of 30 mTorr or less by a vacuum pump 41, and then a compound gas containing composition elements of a thin film to be formed on the surface of the sample 32, that is, monosilane (SiH 4 ) and ammonia (NH 3 ) , Mixed gas of nitrogen (N 2 ) at a gas flow rate of 400sccM, 500sccM, 1600sccM, respectively, is introduced into the vacuum container 31 from the gas flow controller 44, and the pressure in the vacuum container 31 is adjusted to 300mTorr by the pressure controller 43. Hold.
また試料32は試料台39によって300℃の温度に加熱制
御する。次に電極33に高周波電源より周波数400kHzの高
周波電力を供給することによって、試料32を含む空間に
低温プラズマを発生させる。ここで、電極33は、フィー
ドバック制御により350℃に一定に保持する。低温プラ
ズマ発生中、ヒータ33a及びシース熱電対33bに電磁誘導
されたノイズ成分である高周波電圧は、ラインフィルタ
ー37およびノイズフィルター38によって電源34および温
度測定装置35に入るのを防止する。その際、電磁誘導に
よって生じる高周波電圧が大きい場合、ラインフィルタ
ー37およびノイズフィルター35を構成するコイル部品が
徐々に発熱し、ノイズ成分の除去性能が大巾に低下す
る。そこで、コイル部品のコアの容量を大きくすると共
に、強制冷却機構を設けることによって上記問題点が生
じるのを防止している。オシロスコープで、本実施例で
試みたラインフィルター37とノイズフィルター38の性能
を実験評価してみると、高周波電圧のピークツーピーク
が4kV程度のノイズ成分をカットでき、60分間低温プラ
ズマを発生してもその性能は維持された。また、試料台
39は、電極33からの輻射熱と試料台39の内部の加熱ヒー
タによって昇温し、試料台39の温度制御は、加熱制御装
置40によって制御した。The sample 32 is heated and controlled to a temperature of 300 ° C. by the sample table 39. Next, high-frequency power having a frequency of 400 kHz is supplied from the high-frequency power source to the electrode 33 to generate low-temperature plasma in the space containing the sample 32. Here, the electrode 33 is kept constant at 350 ° C. by feedback control. During generation of the low temperature plasma, the high frequency voltage which is a noise component electromagnetically induced in the heater 33a and the sheath thermocouple 33b is prevented from entering the power source 34 and the temperature measuring device 35 by the line filter 37 and the noise filter 38. At this time, when the high frequency voltage generated by the electromagnetic induction is large, the coil components that form the line filter 37 and the noise filter 35 gradually generate heat, and the noise component removal performance is significantly reduced. Therefore, the above problem is prevented by increasing the capacity of the core of the coil component and providing a forced cooling mechanism. Experimentally evaluating the performance of the line filter 37 and the noise filter 38 tried in this example with an oscilloscope, the peak-to-peak of the high frequency voltage can cut the noise component of about 4 kV, and the low temperature plasma is generated for 60 minutes. However, its performance was maintained. Also, the sample table
The radiant heat from the electrode 33 and the heater inside the sample stage 39 raised the temperature of the sample 39, and the temperature control of the sample stage 39 was controlled by the heating controller 40.
以上の結果、試料32上に屈折率1.998±0.02、膜厚分
布±３％の窒化シリコン膜を形成することができ、バッ
チ間の前記バラツキも±４％以内に容易に納めることが
できた。また膜質の評価指標となるBHFエッチングレー
トもバッチ間を含めて135Å/min5％以内に入れることが
でき、膜欠陥の一つであるウエハ表面の異物（パーティ
クル）も200個/6″ウエハ以内に抑えることができた。As a result, a silicon nitride film having a refractive index of 1.998 ± 0.02 and a film thickness distribution of ± 3% can be formed on the sample 32, and the variation between batches can be easily set within ± 4%. In addition, the BHF etching rate, which is an index for evaluating the film quality, can be set within 135 Å / min 5% including batches, and the number of foreign matter (particles) on the wafer surface, which is one of the film defects, within 200/6 ″ wafers. I was able to hold back.
また、試料台39の内部に加熱ヒータをもっているため
試料台39の温度応答性が良いため、窒化シリコン膜の累
積膜厚が増加しても試料台39を一定温度に保持すること
ができた。また従来初期加熱立上げに要する時間が13時
間程度であったものにおいて、本発明を適用すれば多く
とも２時間程度で立上げ可能であることが確認できた。Further, since the sample table 39 has a heater inside, the temperature response of the sample table 39 is good, so that the sample table 39 can be kept at a constant temperature even if the cumulative film thickness of the silicon nitride film is increased. Further, it was confirmed that when the present invention is applied, it is possible to start up in about 2 hours at the most, although the time required for initial heating and start-up was conventionally about 13 hours.
以上のように本実施例によれば、高周波電力が印加さ
れる電極33の内部に配置されたヒータ33a及びシース熱
電対33bと、シース熱電対33bで計測した温度をもとに温
度制御装置36によってヒータ33aに電力を供給する電源3
4に信号を与え、フィードバック制御する手段と、ヒー
タ33aと電源34およびシース熱電対33bと温度測定装置35
との間に配置したラインフィルター37およびノイズフィ
ルター38と、内部に加熱ヒータ39aと熱電対39bを有し、
フィードバック制御される試料台39とを備えているの
で、稼動時に電極33および試料台39を各々独立に温度制
御することによって、プラズマCVD膜の膜質の再現性及
び膜欠陥の制御性を大巾に向上できると共に、装置の加
熱立上げ時間を大巾に短縮することができる。As described above, according to the present embodiment, the heater 33a and the sheath thermocouple 33b arranged inside the electrode 33 to which the high frequency power is applied, and the temperature control device 36 based on the temperature measured by the sheath thermocouple 33b. Power source 3 that supplies power to the heater 33a
4, a means for performing feedback control, a heater 33a, a power supply 34, a sheath thermocouple 33b, and a temperature measuring device 35.
A line filter 37 and a noise filter 38 arranged between the, and a heater 39a and a thermocouple 39b inside,
Since the sample stage 39 that is feedback-controlled is provided, by independently controlling the temperature of the electrode 33 and the sample stage 39 during operation, the reproducibility of the film quality of the plasma CVD film and the controllability of film defects are greatly enhanced. It can be improved and the heating start-up time of the device can be greatly shortened.
発明の効果 本発明によれば、高周波電力が印加される電極の内部
にヒータとシース熱電対を有し、シース熱電対で計測し
た温度をもとに温度制御装置を用いて電極温度をフィー
ドバック制御する加熱手段と、ヒータと電源およびシー
ス熱電対と温度測定装置との区間に各々ラインフィルタ
ーおよびノイズフィルターを配置していることによっ
て、電極温度を一定に保つことができる。EFFECTS OF THE INVENTION According to the present invention, a heater and a sheath thermocouple are provided inside an electrode to which high-frequency power is applied, and the electrode temperature is feedback-controlled using a temperature controller based on the temperature measured by the sheath thermocouple. The electrode temperature can be kept constant by disposing the line filter and the noise filter in the section between the heating means, the heater and the power source, and the sheath thermocouple and the temperature measuring device, respectively.
また、試料台の内部にヒータ及びシース熱電対を有
し、各々、フィードバック制御しているため、試料台を
応答性よく一定温度に保つことができ、かつ内部にヒー
タがあるため試料台の立つ上げ時間を大きく短縮するこ
とが可能である。Further, since the heater and the sheath thermocouple are provided inside the sample table and each is feedback-controlled, the sample table can be maintained at a constant temperature with good responsiveness, and the sample table stands up due to the heater inside. It is possible to greatly shorten the raising time.
第１図は本発明の一実施例におけるプラズマCVD装置の
概略構成図、第２図は従来のプラズマCVD装置の概略構
成図、第３図は従来のプラズマCVD装置においてプラズ
マCVD膜の累積膜厚の増加に伴う試料台の温度変化を示
す図である。 31……真空容器、33……電極、33a……ヒータ、33b……
シース熱電対、34……電源、35……温度測定装置、36…
…温度制御装置、37……ラインフィルター、38……ノイ
ズフィルター、39……試料台、39a……加熱ヒータ、39b
……熱電対、40……加熱制御装置、41……真空ポンプ、
42……パイプ、43……圧力制御装置、44……ガス流量制
御装置、45……高周波電源。FIG. 1 is a schematic configuration diagram of a plasma CVD apparatus in one embodiment of the present invention, FIG. 2 is a schematic configuration diagram of a conventional plasma CVD apparatus, and FIG. 3 is a cumulative film thickness of a plasma CVD film in a conventional plasma CVD apparatus. It is a figure which shows the temperature change of the sample stand with the increase of. 31 …… vacuum container, 33 …… electrode, 33a …… heater, 33b ……
Sheath thermocouple, 34 ... Power supply, 35 ... Temperature measuring device, 36 ...
… Temperature controller, 37 …… Line filter, 38 …… Noise filter, 39 …… Sample stage, 39a …… Heating heater, 39b
...... Thermocouple, 40 …… Heating control device, 41 …… Vacuum pump,
42 …… Pipe, 43 …… Pressure control device, 44 …… Gas flow control device, 45 …… High frequency power supply.
フロントページの続き (72)発明者 福本 健治 門真市大字門真1006番地 松下電器産業 株式会社内 (72)発明者 上野 省三 門真市大字門真1006番地 松下電器産業 株式会社内 (72)発明者 島 博三 門真市大字門真1006番地 松下電器産業 株式会社内 (56)参考文献 特開 昭61−114520（ＪＰ，Ａ)Front page continued (72) Kenji Fukumoto Kenji Kadoma City 1006 Kadoma, Matsushita Electric Industrial Co., Ltd. (72) Inventor Sanzo Ueno 1006 Kadoma, Kadoma Matsushita Electric Industrial Co., Ltd. 1006 Kadoma, Kadoma, Sanmonshin City Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-61-114520 (JP, A)
Claims (2)
容器内を減圧雰囲気にするための真空排気手段と、真空
容器内の圧力を所定の値にするための圧力制御手段と、
真空容器内にガスを導入するためのガス供給手段と、真
空容器内に位置しており、内部に加熱用のヒータと温度
測定用のシース熱電対を有し、かつ高周波電力が印加さ
れる電極と、前記ヒータに電力を供給する電源と、シー
ス熱電対の検出温度を測定する温度測定装置と、電極の
温度を一定温度に制御するため、温度測定装置と電源と
をフィードバック制御する温度制御装置と、被加工物を
保持する試料台と、ヒータと電源との区間に配置したラ
インフィルターと、シース熱電対と温度測定装置の区間
に配置したノイズフィルターとを備えたプラズマCVD装
置。1. A vacuum container capable of maintaining a vacuum state, a vacuum evacuation unit for creating a reduced pressure atmosphere in the vacuum container, and a pressure control unit for setting the pressure in the vacuum container to a predetermined value.
An electrode which is located in the vacuum container and has a heater for heating and a sheath thermocouple for measuring temperature, which is located in the vacuum container, and which is to be supplied with high frequency power. A power source for supplying power to the heater, a temperature measuring device for measuring the temperature detected by the sheath thermocouple, and a temperature control device for feedback controlling the temperature measuring device and the power source to control the temperature of the electrodes to a constant temperature. A plasma CVD apparatus comprising: a sample table for holding a work piece; a line filter arranged in a section between a heater and a power source; and a noise filter arranged in a section between a sheath thermocouple and a temperature measuring device.
に強制冷却手段が備えられている特許請求の範囲第１項
記載のプラズマCVD装置。2. The plasma CVD apparatus according to claim 1, wherein the line filter and the noise filter are provided with forced cooling means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9250587A JP2502582B2 (en) | 1987-04-15 | 1987-04-15 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9250587A JP2502582B2 (en) | 1987-04-15 | 1987-04-15 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63259081A JPS63259081A (en) | 1988-10-26 |
| JP2502582B2 true JP2502582B2 (en) | 1996-05-29 |
Family
ID=14056166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9250587A Expired - Lifetime JP2502582B2 (en) | 1987-04-15 | 1987-04-15 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2502582B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101358780B1 (en) | 2007-07-20 | 2014-02-04 | 최대규 | Plasma reactor having inductively coupled plasma source with heater |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5159288B2 (en) * | 2007-12-18 | 2013-03-06 | アズビル株式会社 | Condition monitoring device |
-
1987
- 1987-04-15 JP JP9250587A patent/JP2502582B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101358780B1 (en) | 2007-07-20 | 2014-02-04 | 최대규 | Plasma reactor having inductively coupled plasma source with heater |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63259081A (en) | 1988-10-26 |
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