JP2023514047A - 光電子デバイスの信号対雑音比向上のための構造及び材料エンジニアリング方法 - Google Patents
光電子デバイスの信号対雑音比向上のための構造及び材料エンジニアリング方法 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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Abstract
Description
Claims (20)
- 半導体デバイスを製造する方法であって、
センサ基板の表側の上に相互接続構造体を形成することと、
前記センサ基板の裏側から前記センサ基板を薄化することと、
前記センサ基板内にトレンチをエッチングすることと、
前記センサ基板の露出表面を予洗浄することと、
前記センサ基板の予洗浄された前記露出表面に直接的に電荷層をエピタキシャル成長させることと、
エッチングされた前記トレンチ内にアイソレーション構造を形成することと
を含む方法。 - 前記センサ基板がシリコンフォトダイオードである、請求項1に記載の方法。
- 前記電荷層が、ホウ素ドープシリコン、ホウ素ドープシリコンゲルマニウム、及びホウ素ドープゲルマニウムから選択された材料を含む、請求項1に記載の方法。
- 前記電荷層内の電荷担体の密度が、1×1018/cm3と5×1021/cm3との間である、請求項3に記載の方法。
- 前記電荷層が、5nmと50nmとの間の厚さを有する、請求項1に記載の方法。
- 前記電荷層の前記エピタキシャル成長が、450℃以下の温度で行われる、請求項1に記載の方法。
- 誘電材料が、酸化ケイ素及び窒化ケイ素から選択される、請求項1に記載の方法。
- 半導体デバイスを製造する方法であって、
ハンドル基板の表面上に直接的に層をエピタキシャル成長させることと、
エピタキシャル成長させた前記層上に直接的に半導体層をエピタキシャル成長させることであって、当該半導体層が、前記エピタキシャル成長させた層と直接的に接触する第1の側、及び前記第1の側と反対側の第2の側を有する、半導体層をエピタキシャル成長させることと、
前記半導体層内へドーパントを注入することと、
前記半導体層の前記第2の側の上に相互接続構造体を形成することと、
前記エピタキシャル成長させた層から前記ハンドル基板を除去することと、
前記第1の側から前記半導体層内にトレンチをエッチングすることと、
エッチングされた前記トレンチ内にアイソレーション構造を形成することと
を含む方法。 - 前記半導体層が、ケイ素を含み、
ドーパントが、ホウ素、リン、又はヒ化物を含み、
誘電材料が、酸化ケイ素及び窒化ケイ素から選択される、請求項8に記載の方法。 - 電荷層が、ホウ素ドープシリコン、ホウ素ドープシリコンゲルマニウム、及びホウ素ドープゲルマニウムから選択された材料を含む、請求項8に記載の方法。
- 前記電荷層内の電荷担体の密度が、1×1017/cm3と5×1021/cm3との間である、請求項10に記載の方法。
- 電荷層が、5nmと100nmとの間の厚さを有する、請求項8に記載の方法。
- 電荷層のエピタキシャル成長が、500℃と約900℃との間の温度で行われる、請求項8に記載の方法。
- イメージセンサであって、
表側及び裏側を有するセンサ基板、
前記裏側において前記センサ基板内に形成された複数のピクセル、
前記センサ基板内に形成された複数のアイソレーション構造であって、前記複数のピクセルが、前記複数のアイソレーション構造のうちの1つによって互いから分離されている、複数のアイソレーション構造、
前記センサ基板の前記表側を覆う相互接続構造体、並びに
前記センサ基板の前記裏側の前記複数のピクセルの表面に直接的にエピタキシャル成長させた電荷層
を備えているイメージセンサ。 - 前記センサ基板がシリコンフォトダイオードである、請求項14に記載のイメージセンサ。
- 前記電荷層が、ホウ素ドープシリコン、ホウ素ドープシリコンゲルマニウム、及びホウ素ドープゲルマニウムから選択された材料を含む、請求項14に記載のイメージセンサ。
- 前記電荷層内の電荷担体の密度が、1×1018/cm3と5×1021/cm3との間である、請求項16に記載のイメージセンサ。
- 前記電荷層が、5nmと50nmとの間の厚さを有する、請求項14に記載のイメージセンサ。
- 前記複数のアイソレーション構造が、ケイ素含有誘電材料を含む、請求項14に記載のイメージセンサ。
- 前記複数のアイソレーション構造がそれぞれ、50と100との間の幅対深さのアスペクト比を有する、請求項14に記載のイメージセンサ。
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PCT/US2021/014916 WO2021167752A1 (en) | 2020-02-21 | 2021-01-25 | Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement |
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KR (1) | KR20220114649A (ja) |
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WO2022122451A1 (en) * | 2020-12-11 | 2022-06-16 | Ams-Osram Ag | Photodiode device with high responsivity |
US20220293647A1 (en) * | 2021-03-10 | 2022-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric structure overlying image sensor element to increase quantum efficiency |
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CN115004372A (zh) | 2022-09-02 |
EP4107780A1 (en) | 2022-12-28 |
KR20220114649A (ko) | 2022-08-17 |
US12015042B2 (en) | 2024-06-18 |
WO2021167752A1 (en) | 2021-08-26 |
TW202135171A (zh) | 2021-09-16 |
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