JP2023068633A - 電界発光表示装置 - Google Patents
電界発光表示装置 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
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- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
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- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80523—Multilayers, e.g. opaque multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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Abstract
Description
Claims (20)
- 基板上に配置され、第1金属層と前記第1金属層の上に積層された第2金属層とを具備する遮光層、
前記遮光層を覆い、前記基板上に配置された第1バッファ層、
前記第1バッファ層の上に配置された第2バッファ層、
前記第2バッファ層の上に配置されたゲート絶縁膜、
前記ゲート絶縁膜上に前記遮光層と重畳せずに配置され、第3金属層および前記第3金属層上に積層された第4金属層を具備するゲート配線、
前記ゲート配線を覆う保護膜、
前記保護膜の上に配置された平坦化膜、および
前記平坦化膜上に順に積層された第1電極、発光層及び第2電極を具備する発光素子を含む電界発光表示装置。 - 前記第2電極が、
前記発光層の上に配置された第1カソード電極層、
前記第1カソード電極層の上に配置された第2カソード電極層、および
前記第2カソード電極層の上に配置された第3カソード電極層を含む、請求項1に記載の電界発光表示装置。 - 前記第2カソード電極層が、
前記第1カソード電極層と前記第2カソード電極層との界面で反射する第1反射光と、前記第3カソード電極層で反射する第2反射光の位相が相反するように設定された厚さを有する、請求項2に記載の電界発光表示装置。 - 前記第1カソード電極層が、厚さが100Å~200Åの金属物質であり、
前記第2カソード電極層は、ドメイン物質とドーパントとを含む導電性有機層であり、
前記第3カソード電極層は、厚さが2,000Å~4,000Åの金属物質である、請求項3に記載の電界発光表示装置。 - 前記第1金属層の厚さが、前記第1金属層の下面で反射する第1反射光、そして前記第1金属層と前記第2金属層との界面で反射する第2反射光の位相が相反するように設定された厚さを有する、請求項1に記載の電界発光表示装置。
- 前記第1金属層及び前記第3金属層のそれぞれが、厚さが100Å~500Åの金属酸化物質を含み、
前記第2金属層及び前記第4金属層のそれぞれは、厚さが2000Å~4000Åの金属物質を含む、請求項5に記載の電界発光表示装置。 - 前記第1バッファ層が、第1屈折率を有し、
前記第2バッファ層は、第1屈折率と異なる第2屈折率を有する、請求項1に記載の電界発光表示装置。 - 前記基板、前記ゲート絶縁膜及び前記保護膜が、前記第2屈折率を有する、請求項7に記載の電界発光表示装置。
- 前記第1バッファ層が、屈折率が1.8の窒化シリコンを含み、
前記第2バッファ層は、屈折率が1.5の酸化シリコンを含む、請求項1に記載の電界発光表示装置。 - 前記第1バッファ層が、
前記基板と前記第1バッファ層との界面で反射する第1反射光と、前記第1バッファ層と前記第2バッファ層との界面で反射する第2反射光との位相が、相反するように設定された厚さを有する、請求項1に記載の電界発光表示装置。 - 前記第1バッファ層が、1,300Å~1,700Åの厚さを有する窒化シリコンからなり、
前記第2バッファ層は、2,000Å~2,400Åの厚さを有する酸化シリコンからなる、請求項10に記載の電界発光表示装置。 - 前記第2バッファ層の上で前記遮光層と重畳するように配置され、
前記ゲート絶縁膜に部分的に覆われた半導体層、及び
前記ゲート絶縁膜の上に配置され、前記ゲート配線と同じ物質で形成されたゲート電極、ソース電極およびドレイン電極をさらに含み、
前記ゲート電極が、前記半導体層の中央部と重畳し、前記ソース電極は、前記半導体層の一側部と接触し、前記ドレイン電極は、前記半導体層の他側部と接触する、請求項1に記載の電界発光表示装置。 - 前記遮光層が、
前記半導体層と重畳する遮光領域、および
前記遮光領域と分離され、データ配線及び駆動電流配線を含む配線領域を具備する、請求項12に記載の電界発光表示装置。 - 前記第1金属層及び前記第3金属層が、モリブデンチタン酸化物を含み、
前記第2金属層及び前記第4金属層は、銅、アルミニウム、銀及び金の中のいずれか一つを含む、請求項1に記載の電界発光表示装置。 - 前記第1電極の端を覆って中央領域を露出して発光領域を定義するバンクをさらに含み、
前記バンクは、ブラックレジン物質を含む、請求項1に記載の電界発光表示装置。 - 基板上に配置され、複数の第1反射層を具備し、前記各複数の第1反射層で反射した光が、その位相を反転して、前記複数の第1反射層で反射した光が部分的に逆向きに干渉するようにする遮光層、
前記遮光層上に配置された複数のバッファ層、
前記複数のバッファ層上に配置されたゲート絶縁膜、
前記ゲート絶縁膜上に配置され、前記遮光層と重畳せずに、複数の第2反射層を具備し、前記各複数の第2反射層で反射した光は、その位相が反転し、前記複数の第2反射層で反射した光が部分的に逆向きに干渉するようにするゲート配線、
前記ゲート配線の少なくとも一部を覆う保護膜、
前記保護膜上に配置された平坦化膜、および
前記平坦化膜上に順に配置された第1電極、発光層及び第2電極を具備した発光素子を含む電界発光表示装置。 - 前記第2電極が、複数のカソード電極層であって、
前記発光層上で100Å~200Åの第1厚さを有し、第1金属材料を含む第1カソード電極層、
前記第1カソード電極層の上に、ドメイン物質とドーパントを具備した導電性有機物質を具備した第2カソード電極層、および
前記第2カソード電極層上に2,000Å~4,000Åの第2厚さを有し、第2金属物質を含む第3カソード電極層を具備する複数のカソード電極層を含む、請求項16に記載の電界発光表示装置。 - 前記複数の第1反射層が、第1金属層と第2金属層とを具備し、前記複数の第2反射層は、第3金属層と第4金属層とを含み、
前記第1金属層及び前記第3金属層のそれぞれは、100Å~500Å厚さの金属酸化物質を含み、
前記第2金属層及び前記第4金属層のそれぞれは2000Å~4000Å厚さの金属物質を含む、請求項16に記載の電界発光表示装置。 - 前記複数のバッファ層が、第1バッファ層および第1バッファ層上に配置された第2バッファ層を含み、
前記第1バッファ層は、第1屈折率を有し、第2バッファ層は、第1屈折率と異なる第2屈折率を有する、請求項16に記載の電界発光表示装置。 - 前記第1バッファ層が、前記第1屈折率が1.8の窒化シリコンを含み、
前記第2バッファ層は、前記第2屈折率が1.5の酸化シリコンを含む、請求項19に記載の電界発光表示装置。
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