JP2023025095A - 積層体およびsawデバイス - Google Patents
積層体およびsawデバイス Download PDFInfo
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- JP2023025095A JP2023025095A JP2022186904A JP2022186904A JP2023025095A JP 2023025095 A JP2023025095 A JP 2023025095A JP 2022186904 A JP2022186904 A JP 2022186904A JP 2022186904 A JP2022186904 A JP 2022186904A JP 2023025095 A JP2023025095 A JP 2023025095A
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- 239000000758 substrate Substances 0.000 claims abstract description 139
- 239000000919 ceramic Substances 0.000 claims abstract description 43
- 238000005411 Van der Waals force Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011029 spinel Substances 0.000 claims description 8
- 229910052596 spinel Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 229910052863 mullite Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000292 calcium oxide Substances 0.000 claims description 3
- 235000012255 calcium oxide Nutrition 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000005498 polishing Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02826—Means for compensation or elimination of undesirable effects of adherence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
従来の積層体においては、圧電体基板とセラミック基板との結合力が不十分となる場合がある。そこで、本開示は、圧電体基板とセラミック基板とが十分な結合力で結合した積層体、および当該積層体を含むSAWデバイスを提供することを目的の1つとする。
本開示の積層体によれば、圧電体基板とセラミック基板とが十分な結合力で結合した積層体を提供することができる。
最初に本願発明の実施態様を列記して説明する。本願の積層体は、多結晶セラミックから構成され、支持主面を有するセラミック基板と、支持主面に対して結合主面においてファンデルワールス力により結合され、圧電体からなる圧電体基板と、を備える。セラミック基板は、支持主面を含むように形成される支持主面アモルファス層を含む。圧電体基板は、結合主面を含むように形成される結合主面アモルファス層を含む。そして、支持主面アモルファス層の厚みは、結合主面アモルファス層の厚みよりも小さい。
次に、本発明にかかる積層体の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
Claims (6)
- 多結晶セラミックから構成され、支持主面を有するセラミック基板と、
前記支持主面に対して結合主面においてファンデルワールス力により結合され、圧電体からなる圧電体基板と、を備え、
前記セラミック基板は、前記支持主面を含むように形成される支持主面アモルファス層を含み、
前記圧電体基板は、前記結合主面を含むように形成される結合主面アモルファス層を含み、
前記支持主面アモルファス層の厚みは、前記結合主面アモルファス層の厚みよりも小さく、
前記圧電体基板の厚みは前記セラミック基板の厚み以下である、積層体。 - 前記支持主面アモルファス層の厚みは0.3nm以上3.0nm以下である、請求項1に記載の積層体。
- 前記結合主面アモルファス層の厚みは0.5nm以上5.0nm以下である、請求項1または請求項2に記載の積層体。
- 前記セラミック基板は、スピネル、アルミナ、マグネシア、シリカ、ムライト、コージェライト、カルシア、チタニア、窒化珪素、窒化アルミニウムおよび炭化珪素からなる群から選択される1種以上の材料から構成される、請求項1~請求項3のいずれか1項に記載の積層体。
- 前記圧電体基板は、タンタル酸リチウムまたはニオブ酸リチウムからなる、請求項1~請求項4のいずれか1項に記載の積層体。
- 請求項1~請求項5のいずれか1項に記載の積層体と、
前記圧電体基板の前記セラミック基板とは反対側の主面上に形成される電極と、を備えるSAWデバイス。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017060774 | 2017-03-27 | ||
JP2017060774 | 2017-03-27 | ||
JP2019509180A JP7247885B2 (ja) | 2017-03-27 | 2018-03-12 | 積層体およびsawデバイス |
PCT/JP2018/009453 WO2018180418A1 (ja) | 2017-03-27 | 2018-03-12 | 積層体およびsawデバイス |
Related Parent Applications (1)
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JP2019509180A Division JP7247885B2 (ja) | 2017-03-27 | 2018-03-12 | 積層体およびsawデバイス |
Publications (2)
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JP2023025095A true JP2023025095A (ja) | 2023-02-21 |
JP7509185B2 JP7509185B2 (ja) | 2024-07-02 |
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JP2019509180A Active JP7247885B2 (ja) | 2017-03-27 | 2018-03-12 | 積層体およびsawデバイス |
JP2022186904A Active JP7509185B2 (ja) | 2017-03-27 | 2022-11-22 | 積層体およびsawデバイス |
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JP2019509180A Active JP7247885B2 (ja) | 2017-03-27 | 2018-03-12 | 積層体およびsawデバイス |
Country Status (5)
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US (1) | US10979017B2 (ja) |
JP (2) | JP7247885B2 (ja) |
CN (1) | CN110495097B (ja) |
TW (1) | TWI749192B (ja) |
WO (1) | WO2018180418A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201905013VA (en) | 2018-06-11 | 2020-01-30 | Skyworks Solutions Inc | Acoustic wave device with spinel layer |
US11621690B2 (en) | 2019-02-26 | 2023-04-04 | Skyworks Solutions, Inc. | Method of manufacturing acoustic wave device with multi-layer substrate including ceramic |
CN116137944A (zh) * | 2020-07-30 | 2023-05-19 | 京瓷株式会社 | 弹性波元件、梯型滤波器、分波器以及通信装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017595A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体装置 |
JP3774782B2 (ja) | 2003-05-14 | 2006-05-17 | 富士通メディアデバイス株式会社 | 弾性表面波素子の製造方法 |
JP3929983B2 (ja) * | 2004-03-03 | 2007-06-13 | 富士通メディアデバイス株式会社 | 接合基板、弾性表面波素子および弾性表面波デバイス並びにその製造方法 |
JP5549167B2 (ja) | 2009-09-18 | 2014-07-16 | 住友電気工業株式会社 | Sawデバイス |
WO2012033125A1 (ja) | 2010-09-07 | 2012-03-15 | 住友電気工業株式会社 | 基板、基板の製造方法およびsawデバイス |
WO2014077212A1 (ja) | 2012-11-14 | 2014-05-22 | 日本碍子株式会社 | 複合基板及びその製法 |
CN103947110B (zh) | 2012-11-14 | 2016-08-17 | 日本碍子株式会社 | 复合基板 |
JP3187231U (ja) * | 2013-09-05 | 2013-11-14 | 日本碍子株式会社 | 複合基板 |
JP2016100729A (ja) | 2014-11-20 | 2016-05-30 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
DE112016006627T5 (de) | 2016-03-22 | 2018-12-06 | Sumitomo Electric Industries, Ltd. | Keramisches Substrat, Schichtkörper und SAW-Vorrichtung |
-
2018
- 2018-03-12 US US16/495,139 patent/US10979017B2/en active Active
- 2018-03-12 JP JP2019509180A patent/JP7247885B2/ja active Active
- 2018-03-12 WO PCT/JP2018/009453 patent/WO2018180418A1/ja active Application Filing
- 2018-03-12 CN CN201880019487.4A patent/CN110495097B/zh active Active
- 2018-03-15 TW TW107108766A patent/TWI749192B/zh active
-
2022
- 2022-11-22 JP JP2022186904A patent/JP7509185B2/ja active Active
Also Published As
Publication number | Publication date |
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JP7247885B2 (ja) | 2023-03-29 |
CN110495097A (zh) | 2019-11-22 |
US20200091891A1 (en) | 2020-03-19 |
TW201902685A (zh) | 2019-01-16 |
WO2018180418A1 (ja) | 2018-10-04 |
US10979017B2 (en) | 2021-04-13 |
JP7509185B2 (ja) | 2024-07-02 |
CN110495097B (zh) | 2024-01-30 |
JPWO2018180418A1 (ja) | 2020-02-06 |
TWI749192B (zh) | 2021-12-11 |
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