JP2022544375A - Cmp温度制御のための装置および方法 - Google Patents
Cmp温度制御のための装置および方法 Download PDFInfo
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- JP2022544375A JP2022544375A JP2022507601A JP2022507601A JP2022544375A JP 2022544375 A JP2022544375 A JP 2022544375A JP 2022507601 A JP2022507601 A JP 2022507601A JP 2022507601 A JP2022507601 A JP 2022507601A JP 2022544375 A JP2022544375 A JP 2022544375A
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- 238000000034 method Methods 0.000 title claims description 21
- 238000005498 polishing Methods 0.000 claims abstract description 183
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 102
- 239000007788 liquid Substances 0.000 claims description 59
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 39
- 238000001816 cooling Methods 0.000 claims description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 27
- 239000002826 coolant Substances 0.000 claims description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 235000011089 carbon dioxide Nutrition 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 230000008014 freezing Effects 0.000 claims 1
- 238000007710 freezing Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 23
- 239000002002 slurry Substances 0.000 description 19
- 239000003595 mist Substances 0.000 description 18
- 230000003750 conditioning effect Effects 0.000 description 15
- 239000012530 fluid Substances 0.000 description 13
- 239000003570 air Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000001569 carbon dioxide Substances 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- -1 steam Chemical compound 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (15)
- 研磨面を有する研磨パッドを支持するプラテンと、
ガス源に結合される入口を有する導管と、
前記導管に結合され、前記ガス源からのガスを前記研磨パッドの前記研磨面上へと方向付けるように前記プラテンの上に懸架された先細末広ノズルを有する、ディスペンサと、を備える、化学機械研磨システム。 - 前記ガス源に結合され、研磨動作の選択されたステップの間、前記ガス源に、前記先細末広ノズルを通して前記ガスを前記研磨面上に送達させるように構成された、コントローラを備える、請求項1に記載のシステム。
- 液体源に結合される入口と、前記液体源からの液体を前記先細末広ノズル内へと送達する出口とを有する、インジェクタを更に備える、請求項1に記載のシステム。
- 前記液体源に結合され、研磨動作の選択されたステップの間、前記液体源に、液体を前記先細末広ノズル内へと送達させるように構成された、コントローラを備える、請求項3に記載のシステム。
- 前記コントローラが、前記ガス源に結合され、前記先細末広ノズルを通るガスの流量を、前記液体を凍結させるのに十分に前記ガスが冷却されるような流量にするように構成されている、請求項4に記載のシステム。
- 前記ガス源に結合され、前記先細末広ノズルを通るガスの流量を、クーラントガスが20℃より高い初期温度から20℃未満まで冷却されるような流量にするように構成された、コントローラを備える、請求項1に記載のシステム。
- 前記コントローラが、前記先細末広ノズルを通るガスの流量を、前記クーラントガスが0℃未満まで冷却されるような流量にするように構成されている、請求項6に記載のシステム。
- ガス源からのガスを先細末広ノズルまで送達することと、
前記ガスを前記先細末広ノズルに流すことによって前記ガスを冷却することと、
前記冷却されたガスを研磨パッド上へと方向付けることと、
を含む、化学機械研磨システムの温度制御方法。 - 前記ガスが、空気を冷やすことによって、液体窒素の蒸発によって、液体エタノールの蒸発によって、液体イソプロピルアルコールの蒸発によって、および/またはドライアイスの昇華によって形成される、請求項8に記載の方法。
- 液体を前記先細末広ノズル内へと注入することを含む、請求項8に記載の方法。
- 前記液体が、水、エタノール、および/またはイソプロピルアルコールである、請求項10に記載の方法。
- 前記液体を、前記冷却されたガスに暴露することによって、凍結させて固体粒子にすることを更に含む、請求項10に記載の方法。
- 前記ガスを、20℃より高い初期温度から20℃未満まで冷却することを含む、請求項8に記載の方法。
- 冷却された前記ガスを0℃未満の温度で前記研磨パッド上に分配することを含む、請求項13に記載の方法。
- 冷却された前記ガスを-70から-50℃の温度で前記研磨パッド上に分配することを含む、請求項14に記載の方法。
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JP2024019260A JP2024069201A (ja) | 2019-08-13 | 2024-02-13 | Cmp温度制御のための装置および方法 |
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US201962886260P | 2019-08-13 | 2019-08-13 | |
US62/886,260 | 2019-08-13 | ||
PCT/US2020/045667 WO2021030295A1 (en) | 2019-08-13 | 2020-08-10 | Apparatus and method for cmp temperature control |
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JP2024019260A Division JP2024069201A (ja) | 2019-08-13 | 2024-02-13 | Cmp温度制御のための装置および方法 |
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JP2022544375A true JP2022544375A (ja) | 2022-10-18 |
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JP2022507601A Pending JP2022544375A (ja) | 2019-08-13 | 2020-08-10 | Cmp温度制御のための装置および方法 |
JP2024019260A Pending JP2024069201A (ja) | 2019-08-13 | 2024-02-13 | Cmp温度制御のための装置および方法 |
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US (2) | US20210046604A1 (ja) |
JP (2) | JP2022544375A (ja) |
KR (1) | KR20220044801A (ja) |
CN (1) | CN114206553A (ja) |
TW (1) | TW202129731A (ja) |
WO (1) | WO2021030295A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111512425A (zh) | 2018-06-27 | 2020-08-07 | 应用材料公司 | 化学机械抛光的温度控制 |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
EP4171873A1 (en) | 2020-06-29 | 2023-05-03 | Applied Materials, Inc. | Temperature and slurry flow rate control in cmp |
US11919123B2 (en) | 2020-06-30 | 2024-03-05 | Applied Materials, Inc. | Apparatus and method for CMP temperature control |
CN113977458B (zh) * | 2021-11-25 | 2022-12-02 | 中国计量科学研究院 | 抛光液注入装置及抛光*** |
Citations (2)
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JP2013022664A (ja) * | 2011-07-19 | 2013-02-04 | Ebara Corp | 研磨装置および方法 |
JP2013099814A (ja) * | 2011-11-08 | 2013-05-23 | Toshiba Corp | 研磨方法及び研磨装置 |
Family Cites Families (13)
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US4919232A (en) * | 1989-05-12 | 1990-04-24 | Hugh Lofton | Cold lubricant misting device and method |
US6887132B2 (en) * | 2001-09-10 | 2005-05-03 | Multi Planar Technologies Incorporated | Slurry distributor for chemical mechanical polishing apparatus and method of using the same |
WO2008139632A1 (ja) * | 2007-05-11 | 2008-11-20 | Nippon Steel Corporation | 鋼板の制御冷却装置および冷却方法 |
JP4151796B1 (ja) * | 2007-06-13 | 2008-09-17 | 福岡県 | バリ取り洗浄装置およびバリ取り洗浄方法 |
JP5547472B2 (ja) * | 2009-12-28 | 2014-07-16 | 株式会社荏原製作所 | 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置 |
JP2012148376A (ja) * | 2011-01-20 | 2012-08-09 | Ebara Corp | 研磨方法及び研磨装置 |
TWI548483B (zh) * | 2011-07-19 | 2016-09-11 | 荏原製作所股份有限公司 | 研磨裝置及方法 |
JP5775797B2 (ja) * | 2011-11-09 | 2015-09-09 | 株式会社荏原製作所 | 研磨装置および方法 |
JP5983422B2 (ja) * | 2013-01-21 | 2016-08-31 | 旭硝子株式会社 | ガラス基板の研磨方法及び製造方法 |
JP6030980B2 (ja) * | 2013-03-26 | 2016-11-24 | 株式会社荏原製作所 | 研磨装置温度制御システム、及び研磨装置 |
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KR102447790B1 (ko) * | 2014-12-12 | 2022-09-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp 동안의 인 시튜 부산물 제거 및 플래튼 냉각을 위한 시스템 및 프로세스 |
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- 2020-08-06 TW TW109126617A patent/TW202129731A/zh unknown
- 2020-08-10 JP JP2022507601A patent/JP2022544375A/ja active Pending
- 2020-08-10 WO PCT/US2020/045667 patent/WO2021030295A1/en active Application Filing
- 2020-08-10 US US16/989,734 patent/US20210046604A1/en active Pending
- 2020-08-10 KR KR1020227007838A patent/KR20220044801A/ko not_active Application Discontinuation
- 2020-08-10 CN CN202080056838.6A patent/CN114206553A/zh active Pending
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2023
- 2023-12-12 US US18/537,574 patent/US20240109163A1/en active Pending
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2024
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Patent Citations (2)
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JP2013022664A (ja) * | 2011-07-19 | 2013-02-04 | Ebara Corp | 研磨装置および方法 |
JP2013099814A (ja) * | 2011-11-08 | 2013-05-23 | Toshiba Corp | 研磨方法及び研磨装置 |
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CN114206553A (zh) | 2022-03-18 |
US20240109163A1 (en) | 2024-04-04 |
WO2021030295A1 (en) | 2021-02-18 |
KR20220044801A (ko) | 2022-04-11 |
JP2024069201A (ja) | 2024-05-21 |
US20210046604A1 (en) | 2021-02-18 |
TW202129731A (zh) | 2021-08-01 |
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A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20240315 |