JP2022529639A - 太陽電池の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 220
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000010521 absorption reaction Methods 0.000 claims abstract description 32
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000002019 doping agent Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 238000002161 passivation Methods 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 20
- 238000010586 diagram Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 114
- 230000005684 electric field Effects 0.000 description 22
- 230000003685 thermal hair damage Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 14
- 230000001186 cumulative effect Effects 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- -1 silicon oxide nitride Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Abstract
Description
反対される面を意味する。したがって、一例として、半導体基板の一面が光が入射される半導体基板の前面である場合、半導体基板の反対面とは半導体基板の後面を意味する。または逆に、半導体基板の一面が半導体基板の後面である場合、半導体基板の反対面とは半導体基板の前面を意味され得る。
レーザーが半導体基板10に照射されると、レーザーが照射された局部領域が加熱されながら、レーザー融剤(ablation)が発生して溝40が形成されることができる。ところで、本発明の一実施例において、レーザー30が半導体基板10より吸収係数が高い半導体層20を、先に透過した後、半導体基板10に照射がされるので、レーザー光の一部が半導体層20で吸収が起き、半導体基板10に加わる熱的損傷を減らすことができる。これについては、図面を異なりにして、その効果について詳細に説明する。
Claims (13)
- 半導体基板と、前記半導体基板より高い吸収係数を有する半導体層が前記半導体基板の少なくともいずれかの一面に形成された太陽電池において、
前記半導体層が、レーザーを向くように位置する段階と、
前記半導体層に向かってレーザーを照射し、前記太陽電池にグルーブ(groove:溝)を形成する段階と、
前記溝に沿って前記太陽電池を複数に分割する段階と、
を含む、太陽電池の製造方法。 - 前記溝は、前記半導体層を通過して前記半導体基板の一部にまで形成される、請求項1に記載の太陽電池の製造方法。
- 前記溝の深さは、前記半導体基板の厚さに比べ30~70(%)である、請求項1に記載の太陽電池の製造方法。
- 前記溝は、前記太陽電池を2分割するように、前記太陽電池の中心線に対応して形成された、請求項1に記載の太陽電池の製造方法。
- 前記溝は、前記太陽電池を3分割以上にするように前記太陽電池に複数本形成された、請求項1に記載の太陽電池の製造方法。
- 前記レーザーの波長が1024(nm)であるとき、前記半導体層の厚さは、600(nm)以上である、請求項1に記載の太陽電池の製造方法。
- 前記レーザーの波長が532(nm)であるとき、前記半導体層の厚さは、180(nm)以上である、請求項1に記載の太陽電池の製造方法。
- 前記半導体層は、多結晶シリコンであり、前記半導体基板は、単結晶シリコンである、請求項1に記載の太陽電池の製造方法。
- 前記半導体層は、前記半導体基板の後面に形成された、請求項8に記載の太陽電池の製造方法。
- 前記半導体層は、前記半導体基板の極性と反対の第1導電型ドーパントが含まれた第1導電型領域と前記半導体基板と同じ極性の第2導電型ドーパントが含まれた第2導電型領域を含む、請求項9に記載の太陽電池の製造方法。
- 前記溝は、前記第2導電型領域に形成された、請求項10に記載の太陽電池の製造方法。
- 前記半導体層は、前記半導体基板の極性と反対の第1導電型ドーパントを含む、請求項9に記載の太陽電池の製造方法。
- 前記半導体層と前記半導体基板の間に制御パッシベーション層が形成された、請求項10又は12に記載の太陽電池の製造方法。
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KR1020190048780A KR102350960B1 (ko) | 2019-04-25 | 2019-04-25 | 태양전지의 제조 방법 |
PCT/KR2020/004758 WO2020218757A1 (ko) | 2019-04-25 | 2020-04-08 | 태양전지의 제조 방법 |
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EP (1) | EP3961730A4 (ja) |
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CN115863413A (zh) * | 2023-03-01 | 2023-03-28 | 通威微电子有限公司 | 一种沟槽氧化层制作方法与半导体器件 |
Citations (7)
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JP2008060205A (ja) * | 2006-08-30 | 2008-03-13 | Sanyo Electric Co Ltd | 太陽電池セル及びその製造方法 |
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JP7349509B2 (ja) | 2023-09-22 |
CN113748523A (zh) | 2021-12-03 |
US20220190189A1 (en) | 2022-06-16 |
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