JP2022505770A - バリアーフィルム - Google Patents
バリアーフィルム Download PDFInfo
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- JP2022505770A JP2022505770A JP2021522429A JP2021522429A JP2022505770A JP 2022505770 A JP2022505770 A JP 2022505770A JP 2021522429 A JP2021522429 A JP 2021522429A JP 2021522429 A JP2021522429 A JP 2021522429A JP 2022505770 A JP2022505770 A JP 2022505770A
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- 125000000217 alkyl group Chemical group 0.000 claims description 9
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 34
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
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- 238000010438 heat treatment Methods 0.000 description 4
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- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical class OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 2
- 125000004423 acyloxy group Chemical group 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
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- 125000004448 alkyl carbonyl group Chemical group 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
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- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
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- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 2
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- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
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- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
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- BANNERIEAWNZHY-UHFFFAOYSA-N 2-(4-fluorophenoxy)ethyl prop-2-enoate Chemical compound FC1=CC=C(OCCOC(=O)C=C)C=C1 BANNERIEAWNZHY-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- ZVYPNSGWLVPWSF-UHFFFAOYSA-N 4,6-dichloro-1-benzofuran Chemical compound ClC1=CC(Cl)=C2C=COC2=C1 ZVYPNSGWLVPWSF-UHFFFAOYSA-N 0.000 description 1
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- 229910004261 CaF 2 Inorganic materials 0.000 description 1
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
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- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
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- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- FJKCDSVHCNEOOS-UHFFFAOYSA-N ethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[SiH](OCC)C1=CC=CC=C1 FJKCDSVHCNEOOS-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- ZVJXKUWNRVOUTI-UHFFFAOYSA-N ethoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 ZVJXKUWNRVOUTI-UHFFFAOYSA-N 0.000 description 1
- IADPEWNXRCIVFH-UHFFFAOYSA-N ethoxy-[3-(oxiran-2-ylmethoxy)propyl]-di(propan-2-yl)silane Chemical compound CCO[Si](C(C)C)(C(C)C)CCCOCC1CO1 IADPEWNXRCIVFH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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Abstract
Description
本出願は、2018年10月26日付けの韓国特許出願第10-2018-0128816号、2018年10月26日付けの韓国特許出願第10-2018-0128798号、2018年10月26日付けの韓国特許出願第10-2018-0128791号、および2019年01月09日付けの韓国特許出願第10-2019-0002820号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は、本明細書の一部として含まれる。
本出願は、バリアーフィルムに関する。具体的に、本出願は、酸素や水分などのような外部物質に対する遮断特性に優れたバリアーフィルムに関する。
一つの例示において、前記バリアーフィルムは、38℃温度および100%相対湿度で測定された透湿度が0.5×10-3g/m2・day以下を満たすことができる。より具体的に、前記バリアーフィルムは、前記条件で測定された透湿度が0.45×10-3g/m2・day以下、0.40×10-3g/m2・day以下、0.35×10-3g/m2・day以下、0.30×10-3g/m2・day以下、0.25×10-3g/m2・day以下、0.20×10-3g/m2・day以下、0.15×10-3g/m2・day以下、0.10×10-3g/m2・day以下または0.05×10-3g/m2・day以下でありうる。透湿度の数値が低いほど、バリアー特性に優れているということであるから、前記透湿度の下限は、特に制限されない。一つの例示において、前記透湿度の下限は、0.001×10-3g/m2・day以上、0.005×10-3g/m2・day以上または0.01×10-3g/m2・day以上でありうる。透湿度を測定する代表的な規格としては、ASTM F1249またはISO15506-3などが知られており、本出願の透湿度は、前記のうち適切な方式によって測定され得る。
*透湿度:MOCON Aquatron IIを利用して、製造されたバリアーフィルムの水分透過度を38℃および100%相対湿度の条件で測定した。
*エッチング速度および元素含量の分析:無機物層の表面で基材方向に深さ(厚み)方向の元素分布の分析は、Arイオンを使用して無機層を少しずつ除去しながら進めた。エッチング条件は、基準物質であるTa2O5に対してエッチング速度が0.09nm/sであるArイオン設定を使用した。また、XPS(X-ray photoelectron spectroscopy)を利用して無機層の元素含量を分析した(基材に由来する不純物としてCが検出され得る)。
厚みが約50μmのPET(poly(ethylene terephthalate))(Teijin社製品)フィルム上に厚み1μmの平坦化層を積層し、前記平坦化層上に無機物層を形成した。具体的な過程は、下記の通りである。
-圧力250mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離25mm
-電力密度:直流電力0.8W/cm2を25秒間供給
実施例1の無機層1の代わりに無機コーティング層1-1を、シラザン濃度1.1%であるコーティング液を使用して同一条件で形成した。そして、その他の構成は、実施例1と同一である。
実施例1で製作した無機コーティング層1の上に、さらにシラザン濃度1%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2をさらに積層した。
4.5%で希釈されたポリシラザン溶液を使用し、下記のようにプラズマ条件を異ならしめたことを除いて、実施例1と同一にバリアーフィルムを製造した。
-圧力100mTorr(流量sccm基準Ar:O2=1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離10mm
-電力密度:直流電力0.3W/cm2を65秒間供給
4.9%で希釈されたポリシラザン溶液を使用し、電極との距離が175mmであることを除いて、比較例1と同じ方法でバリアーフィルムを製造した。
Claims (13)
- 基材層;およびSi、N、およびOを含む無機層;を含み、
前記無機層は、600nm以下の厚みを有し、38℃温度および100%相対湿度の条件で測定された透湿度が0.5×10-3g/m2・day以下であるバリアーフィルム。 - 前記無機層の厚みは、300nm以下であり、38℃温度および100%相対湿度の条件で測定された透湿度が0.1×10-3g/m2・day以下である、請求項1に記載のバリアーフィルム。
- 前記無機層は、Ta2O5を0.09nm/sの速度でエッチングするArイオンエッチング条件に対する厚み方向でのエッチング速度が0.17nm/s以下である、請求項1又は2に記載のバリアーフィルム。
- 前記無機層は、XPSにより測定されるSi、N、およびOの元素含量(atomic%)が互いに異なる第1領域および第2領域を含み、
前記第1領域は、前記第2領域より基材層に近い、請求項1~3のいずれか一項に記載のバリアーフィルム。 - 前記第1領域は、O含量>Si含量>N含量を満たす、請求項4に記載のバリアーフィルム。
- 前記第1領域のO含量は、50~65atomic%の範囲内であり、Si含量は、35~45atomic%の範囲内であり、N含量は、1~15atomic%の範囲内である、請求項4又は5に記載のバリアーフィルム。
- 前記第1領域は、O含量(a)とSi含量(b)比率(a/b)が1.1~1.9の範囲内である、請求項4~6のいずれか一項に記載のバリアーフィルム。
- 前記第2領域は、Si含量>N含量>O含量を満たす、請求項4~7のいずれか一項に記載のバリアーフィルム。
- 前記第2領域のSi含量は、45~60atomic%の範囲内であり、N含量は、20~35atomic%の範囲内であり、O含量は、10~30atomic%の範囲内である、請求項4~8のいずれか一項に記載のバリアーフィルム。
- 前記第2領域でのN含量は、第1領域でのN含量より大きい、請求項4~9のいずれか一項に記載のバリアーフィルム。
- 前記第2領域Si含量の最高値と第1領域O含量の最高値の差異が15atomic%以下である、請求項4~10のいずれか一項に記載のバリアーフィルム。
- 請求項1~12のいずれか一項に記載のバリアーフィルムを含む電気または電子素子。
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WO2018123724A1 (ja) * | 2016-12-28 | 2018-07-05 | コニカミノルタ株式会社 | ガスバリアー性フィルム及びガスバリアー性フィルムの製造方法 |
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WO2020085751A1 (ko) | 2020-04-30 |
CN112888730B (zh) | 2023-03-17 |
TWI712507B (zh) | 2020-12-11 |
EP3872120A4 (en) | 2021-12-15 |
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TW202021798A (zh) | 2020-06-16 |
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JP7301127B2 (ja) | 2023-06-30 |
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