JP2022505345A - バリアーフィルム - Google Patents
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- JP2022505345A JP2022505345A JP2021521330A JP2021521330A JP2022505345A JP 2022505345 A JP2022505345 A JP 2022505345A JP 2021521330 A JP2021521330 A JP 2021521330A JP 2021521330 A JP2021521330 A JP 2021521330A JP 2022505345 A JP2022505345 A JP 2022505345A
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract
Description
本出願は、2018年10月26日付けの韓国特許出願第10-2018-0128791号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は、本明細書の一部として含まれる。
本出願は、バリアーフィルムに関する。具体的に、本出願は、酸素や水分などのような外部物質に対する遮断特性に優れたバリアーフィルムに関する。
*透湿度:MOCON Aquatron IIを利用して、製造されたバリアーフィルムの水分透過度を38℃および100%の相対湿度の条件で測定した。
*エッチング速度および元素含量の分析:無機物層の表面で基材方向に深さ(厚み)方向の元素分布の分析は、Arイオンを使用して無機層を少しずつ除去しながら進めた。エッチング条件は、基準物質であるTa2O5に対してエッチング速度が0.09nm/sであるArイオン設定を使用した。また、XPS(X-ray photoelectron spectroscopy)を利用して無機層の元素含量を分析した(基材に由来する不純物としてCが検出され得る)。
下記のように製造されたバリアーフィルムに対する、厚み、エッチング速度および透湿度を測定し、その結果を表1に記載した。
厚みが約50μmのPET(poly(ethylene terephthalate))(Teijin社製品)フィルム上に厚み1μmの平坦化層を積層し、前記平坦化層上に無機物層を形成した。具体的な過程は、下記の通りである。
-圧力250mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離25mm
-電力密度:直流電力0.8W/cm2を25秒間供給
実施例1で製作した無機コーティング層1の上に、さらにシラザン濃度2.4%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2-1をさらに積層した。
実施例1で製作した無機コーティング層1の代わりに、シラザン濃度2.4%であるコーティング液を使用し、実施例1と同じ条件でプラズマ処理をして、無機コーティング層1-1を形成した。そして、その上にさらにシラザン濃度2.4%であるコーティング液を使用してポリシラザン層を形成した。その後、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2-2をさらに積層した。
無機コーティング層の製造時にシラザン濃度2.4%であるコーティング液を平坦化層上に塗布し、下記のようにプラズマ処理条件を異ならしめたことを除いて、実施例1と同じ方法で基材層/平坦化層/無機コーティング層1-2を含むバリアーフィルムを製造した。以後、前記無機コーティング層1-2上にシラザン濃度2.4%であるコーティング液を塗布し、下記条件でプラズマ処理を行って、基材層/平坦化層/無機コーティング層1-2/無機コーティング層2-3を含むバリアーフィルムを製造した。
-圧力150mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離40mm
-電力密度:直流電力0.45W/cm2を45秒間供給
4.5%で希釈されたポリシラザン溶液を使用し、下記のようにプラズマ条件を異ならしめたことを除いて、実施例1と同一にバリアーフィルムを製造した。
-圧力100mTorr(流量sccm基準Ar:O2=1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離10mm
-電力密度:直流電力0.3W/cm2を65秒間供給
4.9%で希釈されたポリシラザン溶液を使用し、電極との距離が175mmであることを除いて、比較例1と同じ方法でバリアーフィルムを製造した。
下記のように参考例1と参考例2で製造されたバリアーフィルムと、前記から製造された実施例1~5のバリアーフィルムに対する水分透過度を比較した。
実施例1で製作した無機層1の上に、さらにシラザン濃度1%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機層2-4をさらに積層して、基準条件での無機層エッチング速度が0.17nm/s未満であるバリアーフィルムを製造した。
実施例1で製作した無機層1の代わりに、シラザン濃度1.8%であるコーティング液を使用し、実施例1と同じ条件でプラズマ処理をして無機層1-3を形成した。そして、その上にさらにシラザン濃度3.1%であるコーティング液を使用してポリシラザン層を形成した。その後、実施例1と同じ条件でプラズマ処理を行って、無機層2-4をさらに積層して、基準条件での無機層エッチング速度が0.17nm/s未満であるバリアーフィルムを製造した。
Claims (11)
- 基材層;およびXPSにより測定されるSi、N、およびOの元素含量(atomic%)が互いに異なる第1領域および第2領域を含み、Ta2O5を0.09nm/s速度でエッチングするArイオンエッチング条件に対する厚み方向でのエッチング速度が0.17nm/s以下である無機層;を含み、
前記第2領域は、前記第1領域よりNの元素含量が高く、
前記第1領域の厚みは、50nm以上であり、
前記第1領域の厚み(d1)と第2領域の厚み(d2)間の比率(d1/d2)は、2以下であるバリアーフィルム。 - 38℃の温度および100%の相対湿度で測定された透湿度が10×10-4g/m2・day以下である、請求項1に記載のバリアーフィルム。
- 前記第1領域は、前記第2領域より基材層に近い、請求項1又は2に記載のバリアーフィルム。
- 前記第1領域は、O含量>Si含量>N含量を満たす、請求項1~3のいずれか一項に記載のバリアーフィルム。
- 前記第1領域のO含量は、50~65atomic%の範囲内であり、Si含量は、35~45atomic%の範囲内であり、N含量は、1~15atomic%の範囲内である、請求項1~4のいずれか一項に記載のバリアーフィルム。
- 前記第1領域は、O含量(a)とSi含量(b)の比率(a/b)が1.1~1.9範囲内である、請求項1~5のいずれか一項に記載のバリアーフィルム。
- 前記第2領域は、Si含量>N含量>O含量を満たす、請求項1~6のいずれか一項に記載のバリアーフィルム。
- 前記第2領域のSi含量は、45~60atomic%の範囲内であり、N含量は、20~35atomic%の範囲内であり、O含量は、10~30atomic%の範囲内である、請求項1~7のいずれか一項に記載のバリアーフィルム。
- 前記第2領域Si含量の最高値と第1領域O含量の最高値の差異が15atomic%以下である、請求項1~8のいずれか一項に記載のバリアーフィルム。
- 請求項1~10のいずれか一項に記載のバリアーフィルムを含む電気または電子素子。
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