JP2022069457A - 異方性導電フィルム - Google Patents
異方性導電フィルム Download PDFInfo
- Publication number
- JP2022069457A JP2022069457A JP2022021049A JP2022021049A JP2022069457A JP 2022069457 A JP2022069457 A JP 2022069457A JP 2022021049 A JP2022021049 A JP 2022021049A JP 2022021049 A JP2022021049 A JP 2022021049A JP 2022069457 A JP2022069457 A JP 2022069457A
- Authority
- JP
- Japan
- Prior art keywords
- anisotropic conductive
- conductive film
- conductive particles
- repeating unit
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K2201/001—Conductive additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2301/00—Additional features of adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
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- H01L2224/1714—Circular array, i.e. array with radial symmetry
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
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- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
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Abstract
Description
平面視にて、複数の導電粒子の中心を順次結んで形成される多角形の繰り返しユニットが繰り返し配置されており、
繰り返しユニットの多角形が、異方性導電フィルムの長手方向又は短手方向と斜交した辺を有する異方性導電フィルムを提供する。
図1Aは、本発明の実施例の異方性導電フィルム1Aの導電粒子の配置を示す平面図であり、図1Cは、その断面図である。
この異方性導電フィルム1Aは、導電粒子2が絶縁性樹脂バインダ3の表面又はその近傍に単層で配置され、その上に絶縁性接着層4が積層した構造を有している。
導電粒子2としては、公知の異方性導電フィルムにおいて使用されているものを適宜選択して使用することができる。例えば、ニッケル、銅、銀、金、パラジウムなどの金属粒子、ポリアミド、ポリベンゾグアナミン等の樹脂粒子の表面をニッケルなどの金属で被覆した金属被覆樹脂粒子等を挙げることができる。配置される導電粒子の大きさは、好ましくは1μm以上30μm以下、より好ましくは1μm以上10μm以下、更に好ましくは2μm以上6μm以下である。
以下の図1Aから図7に、一例として、多角形の繰り返しユニット5が台形である場合の繰り返しユニットの配置例について説明する。
図1Aに示した異方性導電フィルム1Aの平面視における導電粒子2の配置は、複数の導電粒子2a、2b、2c、2dの中心を順次結んで形成される多角形の繰り返しユニット5が直交する2方向(X方向、Y方向)に繰り返され、異方性導電フィルム1の一面に(即ち、全体的に)配置された状態となっている。なお、本発明の異方性導電フィルムは、必要に応じて導電粒子が配置されていない領域をもつことができる。
導電粒子の最短粒子間距離は、繰り返しユニット内で隣接する導電粒子間においても、繰り返しユニット間で隣接する導電粒子間においても、導電粒子の平均粒子径の0.5倍以上が好ましい。この距離が短すぎると導電粒子相互の接触によりショートが起こりやすくなる。隣接する導電粒子の距離の上限は、バンプ形状やバンプピッチに応じて定める。例えば、バンプ幅200μm、バンプ間スペース200μmの場合に、バンプ幅又はバンプ間スペースのいずれかに導電粒子を最低1個存在させるとき、導電粒子の最短粒子間距離は400μm未満とする。導電粒子の捕捉性を確実にする点からは、200μm未満とすることが好ましい。
導電粒子の個数密度は、異方性導電フィルムの製造コストを抑制する点、及び異方性導電接続時に使用する押圧治具に必要とされる推力が過度に大きくならないようにする点から、導電粒子の平均粒子径が10μm未満の場合、50000個/mm2以下が好ましく、35000個/mm2以下がより好ましく、30000個/mm2以下が更に好ましい。一方、導電粒子の個数密度は、少なすぎると端子で導電粒子が十分に捕捉されないことによる導通不良が懸念されることから、300個/mm2以上が好ましく、500個/mm2以上がより好ましく、800個/mm2以上が更に好ましい。
絶縁性樹脂バインダ3としては、公知の異方性導電フィルムにおいて絶縁性樹脂バインダとして使用されている熱重合性組成物、光重合性組成物、光熱併用重合性組成物等を適宜選択して使用することができる。このうち熱重合性組成物としては、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合性樹脂組成物、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合性樹脂組成物、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合性樹脂組成物等をあげることができ、光重合性組成物としては、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合性樹脂組成物等をあげることができる。特に問題が生じないのであれば、複数種の重合性組成物を併用してもよい。併用例としては、熱カチオン重合性組成物と熱ラジカル重合性組成物の併用などがあげられる。
絶縁性樹脂バインダ3の最低溶融粘度は異方性導電フィルムの製造方法等に応じて適宜定めることができる。例えば、異方性導電フィルムの製造方法として、導電粒子を絶縁性樹脂バインダの表面に所定の配置で保持させ、その導電粒子を絶縁性樹脂バインダに押し込む方法を行うとき、絶縁性樹脂バインダがフィルム成形を可能とする点から樹脂の最低溶融粘度を1100Pa・s以上とすることが好ましい。また、後述するように、図14又は図15に示すように絶縁性樹脂バインダ3に押し込んだ導電粒子2の露出部分の周りに凹み3bを形成したり、図16に示すように絶縁性樹脂バインダ3に押し込んだ導電粒子2の直上に凹み3cを形成したりする点から、最低溶融粘度は、好ましくは1500Pa・s以上、より好ましくは2000Pa・s以上、更に好ましくは3000~15000Pa・s、特に3000~10000Pa・sである。この最低溶融粘度は、一例として回転式レオメータ(TA instruments社製)を用い、昇温速度が10℃/分、測定圧力が5gで一定に保持し、直径8mmの測定プレートを使用して求めることができる。また、好ましくは40~80℃、より好ましくは50~60℃で絶縁性樹脂バインダ3に導電粒子2を押し込む工程を行う場合に、上述と同様に凹み3b又は3cの形成の点から、60℃における粘度は、下限は好ましくは3000Pa・s以上、より好ましくは4000Pa・s以上、更に好ましくは4500Pa・s以上であり、上限は、好ましくは20000Pa・s以下、より好ましくは15000Pa・s以下、更に好ましくは10000Pa・s以下である。
絶縁性樹脂バインダ3の厚みLaは、好ましくは1μm以上60μm以下、より好ましくは1μm以上30μm以下、更に好ましくは2μm以上15μm以下である。また、絶縁性樹脂バインダ3の厚みLaは、導電粒子2の平均粒子径Dとの関係では、それらの比(La/D)が0.6~10が好ましい。絶縁性樹脂バインダ3の厚みLaが大き過ぎると異方性導電接続時に導電粒子が位置ズレしやすくなり、端子における導電粒子の捕捉性が低下する。この傾向はLa/Dが10を超えると顕著である。そこでLa/Dは8以下が好ましく、6以下がより好ましい。反対に絶縁性樹脂バインダ3の厚みLaが小さすぎてLa/Dが0.6未満となると、導電粒子を絶縁性樹脂バインダ3によって所定の粒子分散状態あるいは所定の配列に維持することが困難となる。特に、接続する端子が高密度COGの場合、絶縁性樹脂バインダ3の層厚Laと導電粒子2の粒子径Dとの比(La/D)は、好ましくは0.8~2である。
絶縁性樹脂バインダ3における導電粒子2の埋込状態については特に制限がないが、異方性導電フィルムを対向する部品の間で挟持し、加熱加圧することにより異方性導電接続を行う場合、図14、図15に示すように、導電粒子2を絶縁性樹脂バインダ3から部分的に露出させ、隣接する導電粒子2間の中央部における絶縁性樹脂バインダ3の表面3aの接平面3pに対して導電粒子2の露出部分の周りに凹み3bが形成されているか、又は図16に示すように、絶縁性樹脂バインダ3内に押し込まれた導電粒子2の直上の絶縁性樹脂バインダ部分に、前記と同様の接平面3pに対して凹み3cが形成され、導電粒子2の直上の絶縁性樹脂バインダ3の表面にうねりが存在するようにすることが好ましい。導電粒子2が対向する電子部品の電極間で挟持されて加熱加圧される際に生じる導電粒子2の偏平化に対し、図14、図15に示した凹み3bがあることにより、導電粒子2が絶縁性樹脂バインダ3から受ける抵抗が、凹み3bが無い場合に比して低減する。このため、対向する電極間において導電粒子2が挟持され易くなり、導通性能も向上する。また、絶縁性樹脂バインダ3を構成する樹脂のうち、導電粒子2の直上の樹脂の表面に凹み3c(図16)が形成されていることにより、凹み3cが無い場合に比して加熱加圧時の圧力が導電粒子2に集中し易くなり、電極において導電粒子2が挟持され易くなり、導通性能が向上する。
上述の凹み3bの効果を得やすくする点から、接平面3pからの導電粒子2の最深部の距離(以下、埋込量という)Lbと、導電粒子2の平均粒子径Dとの比(Lb/D)(以下、埋込率という)は60%以上105%以下であることが好ましい。
本発明の異方性導電フィルムでは、導電粒子2を配置させている絶縁性樹脂バインダ3上に、絶縁性樹脂バインダ3を構成する樹脂と粘度や粘着性が異なる絶縁性接着層4が積層されていてもよい。
異方性導電フィルムの製造方法としては、例えば、導電粒子を所定の配列に配置するための転写型を製造し、転写型の凹部に導電粒子を充填し、その上に、剥離フィルム上に形成した絶縁性樹脂バインダ3を被せ圧力をかけ、絶縁性樹脂バインダ3に導電粒子2を押し込むことにより、絶縁性樹脂バインダ3に導電粒子2を転着させる。あるいは更にその導電粒子2上に絶縁性接着層4を積層する。こうして、異方性導電フィルム1Aを得ることができる。
異方性導電フィルムは、電子部品の接続に連続的に供するため、リールに巻かれたフィルム巻装体とすることが好ましい。フィルム巻装体の長さは、5m以上であればよく、10m以上であることが好ましい。上限は特にないが、出荷物の取り扱い性の点から、5000m以下であることが好ましく、1000m以下であることがより好ましく、500m以下であることが更に好ましい。
本発明の異方性導電フィルムは、FPC、ICチップ、ICモジュールなどの第1電子部品と、FPC、リジッド基板、セラミック基板、ガラス基板、プラスチック基板などの第2電子部品とを熱又は光により異方性導電接続する際に好ましく適用することができる。また、ICチップやICモジュールをスタックして第1電子部品同士を異方性導電接続することもできる。このようにして得られる接続構造体及びその製造方法も本発明の一部である。
(異方性導電フィルムの作製)
COG接続に使用する異方性導電フィルムについて、絶縁性樹脂バインダの樹脂組成と導電粒子の配置がフィルム形成能と導通特性に及ぼす影響を次のようにして調べた。
各実験例の異方性導電フィルムに対し、次のようにして(a)初期導通抵抗と(b)導通信頼性を測定した。結果を表2に示す。
各実験例の異方性導電フィルムを、ステージ上のガラス基板と押圧ツール側の導通特性評価用ICとの間に挟み、押圧ツールで加熱加圧(180℃、5秒)して各評価用接続物を得た。この場合、押圧ツールによる推力を低(40MPa)、中(60MPa)、高(80MPa)の3段階に変えて3通りの評価用接続物を得た。
外形 1.8×20.0mm
厚み 0.5mm
バンプ仕様 サイズ30×85μm、バンプ間距離50μm、バンプ高さ15μm
ガラス材質 コーニング社製1737F
外形 30×50mm
厚み 0.5mm
電極 ITO配線
初期導通抵抗の評価基準(実用上、2Ω未満であれば問題はない)
A:0.4Ω未満
B:0.4Ω以上0.8Ω未満
C:0.8Ω以上
(a)で作製した評価用接続物を、温度85℃、湿度85%RHの恒温槽に500時間おく信頼性試験を行い、その後の導通抵抗を、初期導通抵抗と同様に測定し、次の3段階の評価基準で評価した。
A:1.2Ω未満
B:1.2Ω以上2Ω未満
C:2Ω以上
実験例1~3と5~8の異方性導電フィルムを使用し、次のショート発生率の評価用ICを使用して180℃、60MPa、5秒の接続条件で評価用接続物を得、得られた評価用接続物のショート数を計測し、評価用ICの端子数に対する計測したショート数の割合としてショート発生率を求めた。
厚み 0.5mm
バンプ仕様 サイズ25×140μm、バンプ間距離7.5μm、バンプ高さ15μm
(異方性導電フィルムの作製)
FOG接続に使用する異方性導電フィルムについて、絶縁性樹脂バインダの樹脂組成と導電粒子の配置がフィルム形成能と導通特性に及ぼす影響を次のようにして調べた。
各実験例の異方性導電フィルムに対し、次のようにして(a)初期導通抵抗と(b)導通信頼性を測定した。結果を表4に示す。
各実験例で得た異方性導電フィルムを2mm×40mmで裁断し、導通特性の評価用FPCとガラス基板との間に挟み、ツール幅2mmで加熱加圧(180℃、5秒)して各評価用接続物を得た。この場合、押圧ツールによる推力を低(3MPa)、中(4.5MPa)、高(6MPa)の3段階に変えて3通りの評価用接続物を得た。得られた評価用接続物の導通抵抗を実験例1と同様に測定し、その測定値を次の基準で3段階に評価した。
端子ピッチ 20μm
端子幅/端子間スペース 8.5μm/11.5μm
ポリイミドフィルム厚(PI)/銅箔厚(Cu)=38/8、Sn plating
電極 ITO配線
厚み 0.7mm
A:1.6Ω未満
B:1.6Ω以上2.0Ω未満
C:2.0Ω以上
(a)で作製した評価用接続物を、温度85℃、湿度85%RHの恒温槽に500時間おき、その後の導通抵抗を初期導通抵抗と同様に測定し、その測定値を次の基準で3段階に評価した。
A:3.0Ω未満
B:3.0Ω以上4Ω未満
C:4.0Ω以上
初期導通抵抗を測定した評価用接続物のショート数を計測し、計測されたショート数と評価用接続物のギャップ数からショート発生率を求めた。ショート発生率は100ppm未満であれば実用上問題はない。
実験例9~11と13~16のいずれもショート発生率は100ppm未満であった。
2、2a、2b、2c、2d、2e、2f、2g、2h、2p、2q、2r、2s、2t、2u 導電粒子
3 絶縁性樹脂バインダ
4 絶縁性接着層
5、5B 繰り返しユニット
Claims (10)
- 絶縁性樹脂バインダに導電粒子が配置された異方性導電フィルムであって、
平面視にて、複数の導電粒子の中心を順次結んで形成される多角形の繰り返しユニットが繰り返し配置されており、
繰り返しユニットの多角形が、異方性導電フィルムの長手方向又は短手方向と斜交した辺を有する異方性導電フィルム。 - 繰り返しユニットが異方性導電フィルムの一面に配置されている請求項1記載の異方性導電フィルム。
- 繰り返しユニットが台形である請求項1又は2記載の異方性導電フィルム。
- 繰り返しユニットをなす多角形の各辺が異方性導電フィルムの長手方向又は短手方向と斜交している請求項1~3のいずれかに記載の異方性導電フィルム。
- 繰り返しユニットをなす多角形が、異方性導電フィルムの長手方向又は短手方向の辺を
有する1~3のいずれかに記載の異方性導電フィルム。 - 繰り返しユニットを構成する多角形を、該多角形の一辺を中心として反転させた場合に、反転後の繰り返しユニットの多角形の一辺が、反転前に隣接していた繰り返しユニットの一辺と重なる請求項1~5のいずれかに記載の異方性導電フィルム。
- 導電粒子ユニットが正多角形の一部をなす請求項1~6のいずれかに記載の異方性導電フィルム。
- 導電粒子ユニットを構成する導電粒子の配置が、正6角形を隙間無く並べた場合の6角形の頂点と重なる請求項1~5のいずれかに記載の異方性導電フィルム。
- 請求項1~8のいずれかに記載の異方性導電フィルムにより第1電子部品と第2電子部
品が異方性導電接続されている接続構造体。 - 第1電子部品と第2電子部品を異方性導電フィルムを介して熱圧着することにより第1電子部品と第2電子部品の接続構造体を製造する方法であって、異方性導電フィルムとして、請求項1~8のいずれかに記載の異方性導電フィルムを使用する接続構造体の製造方法。
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