JP2022059117A - 半導体装置、半導体装置の製造方法及び電力変換装置 - Google Patents
半導体装置、半導体装置の製造方法及び電力変換装置 Download PDFInfo
- Publication number
- JP2022059117A JP2022059117A JP2020166641A JP2020166641A JP2022059117A JP 2022059117 A JP2022059117 A JP 2022059117A JP 2020166641 A JP2020166641 A JP 2020166641A JP 2020166641 A JP2020166641 A JP 2020166641A JP 2022059117 A JP2022059117 A JP 2022059117A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- lead
- sealing resin
- inner lead
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 221
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 title claims description 42
- 238000007789 sealing Methods 0.000 claims abstract description 135
- 229920005989 resin Polymers 0.000 claims abstract description 117
- 239000011347 resin Substances 0.000 claims abstract description 117
- 238000005452 bending Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 40
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 description 30
- 239000010949 copper Substances 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
- H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
実施の形態1に係る半導体装置の構成を説明する。図1は、実施の形態1に係る半導体装置を示す平面図であり、図2は、図1におけるA-A線での断面図である。
図17は、実施の形態2に係る半導体装置202cを示す平面図であり、図18は、図17におけるE-E線での断面図である。なお、本実施の形態における半導体装置及び半導体装置の製造方法は、多くの構成が実施の形態1と共通する。このため、実施の形態1における半導体装置及び半導体装置製造方法と異なる点について説明するとともに、同一または対応する構成については同じ符号を付けて示し、その説明を省略する。実施の形態1とは、図17~図18に示すように、アウターリード3fには、第1の屈曲部3gに加えて、第2の屈曲部3hが設けられ、封止樹脂5から露出しているインナーリード3eの露出面に平行配置されている構成が相違している。
図21は、実施の形態3に係る半導体装置202eを示す断面図である。なお、本実施の形態における半導体装置及び半導体装置の製造方法は、多くの構成が実施の形態1と共通する。このため、実施の形態1における半導体装置及び半導体装置製造方法と異なる点について説明するとともに、同一または対応する構成については同じ符号を付けて示し、その説明を省略する。実施の形態1とは、図21に示すように、アウターリード3fの第1の屈曲部3gに溝9が設けられている構成が相違している。
本実施の形態は、上述した実施の形態1に係る半導体装置202を電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態4として、三相のインバータに本発明を適用した場合について説明する。
3 リードフレーム
3a、3b ダイパッド
3c タイバー
3d フレーム枠
3e インナーリード
3f アウターリード
3g 第1の屈曲部
3h 第2の屈曲部
4a、4b 金属ワイヤ
5 封止樹脂
6 絶縁放熱板
8 熱伝導材
9 溝
200 電力変換装置
201 主変換回路
202、202a、202b、202c、202d、202e 半導体装置
203 制御回路
Claims (12)
- 半導体素子と、
前記半導体素子を上面に搭載しているダイパッドを有するインナーリードと、
前記半導体素子及び前記インナーリードを封止している封止樹脂と、
前記半導体素子及び前記インナーリードと電気的に接続され、前記封止樹脂の互いに対向する側面から突出しているアウターリードと、
を備え、
前記インナーリードは、段差形状を有し、平面視にて前記インナーリードの一部の面が前記封止樹脂から露出し、
前記アウターリードは、前記ダイパッドの前記上面の方向に延在するように、前記封止樹脂の前記側面に第1の屈曲部を有する
半導体装置。 - 半導体素子と、
前記半導体素子を上面に搭載しているダイパッドを有するインナーリードと、
前記半導体素子及び前記インナーリードを封止している封止樹脂と、
前記半導体素子及び前記インナーリードと電気的に接続され、前記封止樹脂の互いに対向する側面から突出しているアウターリードと、
を備え、
前記インナーリードは、段差形状、及び平面視にて前記インナーリードの一部の面が前記封止樹脂から露出している露出面を有し、
前記アウターリードは、前記封止樹脂の前記側面にて第1の屈曲部を有し、前記インナーリードの前記封止樹脂から露出している前記露出面に平行配置されている
半導体装置。 - 前記アウターリードは、前記ダイパッドの前記上面の方向に延在するように、第2の屈曲部を有する
請求項2記載の半導体装置。 - 前記アウターリードの前記第1の屈曲部には、屈曲により圧縮応力が発生する側の面に溝
を備えた請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記半導体素子が搭載された前記ダイパッドの下面に設けられ、前記封止樹脂から露出している絶縁放熱板
を備えた請求項1から請求項4のいずれか1項に記載の半導体装置。 - 前記絶縁放熱板の前記封止樹脂から露出している面に、板状の熱伝導材
を備えた請求項5記載の半導体装置。 - 前記半導体素子は、RC-IGBTである
請求項1から請求項6のいずれか1項に記載の半導体装置。 - 前記半導体素子は、ワイドバンドギャップ半導体である
請求項1から請求項6のいずれか1項に記載の半導体装置。 - 請求項1から請求項8のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。 - ダイパッドを有するインナーリード、タイバー、フレーム枠及びアウターリードを含む、段差形状を有したリードフレームを準備する部材準備工程と、
前記ダイパッドに半導体素子を搭載するダイボンド工程と、
前記半導体素子及び前記インナーリードを金属ワイヤにて配線接続する配線接続工程と、
前記半導体素子、前記金属ワイヤ、及び平面視にて前記インナーリードの一部の面が露出している露出面を有するように前記インナーリードを、封止樹脂にて封止する封止工程と、
前記タイバーを切断し除去するタイバーカット工程と、
前記アウターリード、前記インナーリードの前記封止樹脂から露出している前記露出面及び前記フレーム枠をめっきするめっき工程と、
前記フレーム枠を切断し除去するフレームカット工程と、
前記アウターリードを前記封止樹脂の互いに対向する側面にて折り曲げるリードフォーミング工程と、
を備えた半導体装置の製造方法。 - 前記リードフォーミング工程は、前記アウターリードの複数箇所を折り曲げる
請求項10記載の半導体装置の製造方法。 - 前記部材準備工程は、前記アウターリードに溝が設けられている前記リードフレームを準備する
請求項10または請求項11に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020166641A JP7479771B2 (ja) | 2020-10-01 | 2020-10-01 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
US17/329,992 US11652032B2 (en) | 2020-10-01 | 2021-05-25 | Semiconductor device having inner lead exposed from sealing resin, semiconductor device manufacturing method thereof, and power converter including the semiconductor device |
DE102021120258.2A DE102021120258A1 (de) | 2020-10-01 | 2021-08-04 | Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungswandler |
CN202111129062.9A CN114284226A (zh) | 2020-10-01 | 2021-09-26 | 半导体装置、半导体装置的制造方法及电力变换装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020166641A JP7479771B2 (ja) | 2020-10-01 | 2020-10-01 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022059117A true JP2022059117A (ja) | 2022-04-13 |
JP7479771B2 JP7479771B2 (ja) | 2024-05-09 |
Family
ID=80738186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020166641A Active JP7479771B2 (ja) | 2020-10-01 | 2020-10-01 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11652032B2 (ja) |
JP (1) | JP7479771B2 (ja) |
CN (1) | CN114284226A (ja) |
DE (1) | DE102021120258A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022134477A1 (de) | 2022-12-22 | 2024-06-27 | Valeo Eautomotive Germany Gmbh | Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09275177A (ja) * | 1996-04-02 | 1997-10-21 | Hitachi Cable Ltd | 半導体装置 |
JPH1070227A (ja) * | 1996-06-18 | 1998-03-10 | Lg Semicon Co Ltd | ボトムリード形半導体パッケージ |
JPH10303358A (ja) * | 1997-02-27 | 1998-11-13 | Fujitsu Ltd | 半導体装置及びその実装構造及びその製造方法 |
JP2000294711A (ja) * | 1999-04-06 | 2000-10-20 | Sony Corp | リードフレーム |
JP2000307048A (ja) * | 1999-04-22 | 2000-11-02 | Mitsui High Tec Inc | 半導体装置 |
JP2012054319A (ja) * | 2010-08-31 | 2012-03-15 | Shindengen Electric Mfg Co Ltd | リードフレーム、半導体装置及びその製造方法 |
WO2015173862A1 (ja) * | 2014-05-12 | 2015-11-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
US20160293523A1 (en) * | 2015-03-31 | 2016-10-06 | Stmicroelectronics, Inc. | Semiconductor device including conductive clip with flexible leads and related methods |
JP2018129526A (ja) * | 2018-03-30 | 2018-08-16 | 住友ベークライト株式会社 | 熱伝導性シートおよび半導体装置 |
WO2020148879A1 (ja) * | 2019-01-18 | 2020-07-23 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229865A (ja) | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3667916B2 (ja) | 1997-02-04 | 2005-07-06 | ローム株式会社 | 樹脂パッケージ型半導体装置、およびその製造方法 |
US7598600B2 (en) * | 2005-03-30 | 2009-10-06 | Stats Chippac Ltd. | Stackable power semiconductor package system |
KR100801621B1 (ko) * | 2007-06-05 | 2008-02-11 | 서울반도체 주식회사 | Led 패키지 |
US8569872B2 (en) * | 2008-07-01 | 2013-10-29 | Stats Chippac Ltd. | Integrated circuit package system with lead-frame paddle scheme for single axis partial saw isolation |
US8575742B1 (en) * | 2009-04-06 | 2013-11-05 | Amkor Technology, Inc. | Semiconductor device with increased I/O leadframe including power bars |
JP2010245417A (ja) * | 2009-04-09 | 2010-10-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP6028592B2 (ja) * | 2013-01-25 | 2016-11-16 | 三菱電機株式会社 | 半導体装置 |
US9082685B2 (en) * | 2013-06-25 | 2015-07-14 | Panasonic Intellectual Property Management Co., Ltd. | Optical-coupling semiconductor device |
JP2015065339A (ja) * | 2013-09-25 | 2015-04-09 | 三菱電機株式会社 | 半導体装置 |
US9331068B2 (en) * | 2013-10-30 | 2016-05-03 | United Silicon Carbide, Inc. | Hybrid wide-bandgap semiconductor bipolar switches |
JP6619356B2 (ja) * | 2014-11-07 | 2019-12-11 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
US9355945B1 (en) * | 2015-09-02 | 2016-05-31 | Freescale Semiconductor, Inc. | Semiconductor device with heat-dissipating lead frame |
JP7106981B2 (ja) * | 2018-05-18 | 2022-07-27 | 富士電機株式会社 | 逆導通型半導体装置 |
CN112204729A (zh) * | 2018-06-06 | 2021-01-08 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
WO2020050325A1 (ja) * | 2018-09-06 | 2020-03-12 | 三菱電機株式会社 | パワー半導体装置およびその製造方法、ならびに電力変換装置 |
-
2020
- 2020-10-01 JP JP2020166641A patent/JP7479771B2/ja active Active
-
2021
- 2021-05-25 US US17/329,992 patent/US11652032B2/en active Active
- 2021-08-04 DE DE102021120258.2A patent/DE102021120258A1/de active Pending
- 2021-09-26 CN CN202111129062.9A patent/CN114284226A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09275177A (ja) * | 1996-04-02 | 1997-10-21 | Hitachi Cable Ltd | 半導体装置 |
JPH1070227A (ja) * | 1996-06-18 | 1998-03-10 | Lg Semicon Co Ltd | ボトムリード形半導体パッケージ |
JPH10303358A (ja) * | 1997-02-27 | 1998-11-13 | Fujitsu Ltd | 半導体装置及びその実装構造及びその製造方法 |
JP2000294711A (ja) * | 1999-04-06 | 2000-10-20 | Sony Corp | リードフレーム |
JP2000307048A (ja) * | 1999-04-22 | 2000-11-02 | Mitsui High Tec Inc | 半導体装置 |
JP2012054319A (ja) * | 2010-08-31 | 2012-03-15 | Shindengen Electric Mfg Co Ltd | リードフレーム、半導体装置及びその製造方法 |
WO2015173862A1 (ja) * | 2014-05-12 | 2015-11-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
US20160293523A1 (en) * | 2015-03-31 | 2016-10-06 | Stmicroelectronics, Inc. | Semiconductor device including conductive clip with flexible leads and related methods |
JP2018129526A (ja) * | 2018-03-30 | 2018-08-16 | 住友ベークライト株式会社 | 熱伝導性シートおよび半導体装置 |
WO2020148879A1 (ja) * | 2019-01-18 | 2020-07-23 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7479771B2 (ja) | 2024-05-09 |
US20220108941A1 (en) | 2022-04-07 |
US11652032B2 (en) | 2023-05-16 |
DE102021120258A1 (de) | 2022-04-07 |
CN114284226A (zh) | 2022-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10546800B2 (en) | Semiconductor module, method for manufacturing the same and electric power conversion device | |
EP3026701B1 (en) | Power module and manufacturing method thereof | |
JP7196815B2 (ja) | 半導体モジュール及び電力変換装置 | |
JP5895220B2 (ja) | 半導体装置の製造方法 | |
JP6752381B1 (ja) | 半導体モジュールおよび電力変換装置 | |
WO2015012181A1 (ja) | パワーモジュールおよびその製造方法 | |
JP6826665B2 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP7091878B2 (ja) | パワーモジュール、電力変換装置、及びパワーモジュールの製造方法 | |
JP7479771B2 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP2013149762A (ja) | 半導体モジュール | |
US11908822B2 (en) | Power semiconductor module and power conversion apparatus | |
JP7053897B2 (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 | |
JP2018073923A (ja) | 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置 | |
US11887903B2 (en) | Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus | |
JP6851559B1 (ja) | 半導体装置および電力変換装置 | |
WO2022138200A1 (ja) | パワー半導体装置およびその製造方法ならびに電力変換装置 | |
JP2022067375A (ja) | 電力用半導体装置およびその製造方法ならびに電力変換装置 | |
US20240136309A1 (en) | Semiconductor device, power conversion device, and method of manufacturing semiconductor device | |
JP2024013570A (ja) | 半導体装置、半導体装置の製造方法および電力変換装置 | |
CN117438404A (zh) | 半导体装置、半导体装置的制造方法以及电力变换装置 | |
WO2021100199A1 (ja) | 半導体装置およびその製造方法ならびに電力変換装置 | |
JP2022029886A (ja) | 半導体装置、半導体装置の製造方法及び電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20220427 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221012 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230726 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230801 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20230804 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230921 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240206 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20240219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240423 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240423 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7479771 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |