JP2022033696A5 - Etching equipment and etching method - Google Patents
Etching equipment and etching method Download PDFInfo
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- JP2022033696A5 JP2022033696A5 JP2021110813A JP2021110813A JP2022033696A5 JP 2022033696 A5 JP2022033696 A5 JP 2022033696A5 JP 2021110813 A JP2021110813 A JP 2021110813A JP 2021110813 A JP2021110813 A JP 2021110813A JP 2022033696 A5 JP2022033696 A5 JP 2022033696A5
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- 238000005530 etching Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 40
- 238000001179 sorption measurement Methods 0.000 claims 6
- 230000001276 controlling effect Effects 0.000 claims 5
- 230000001105 regulatory effect Effects 0.000 claims 4
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 description 1
Description
本開示は、エッチング装置及びエッチング方法に関する。
The present disclosure relates to an etching apparatus and an etching method .
本開示の一の態様によれば、処理チャンバと、前記処理チャンバ内に配置された基板支持台と、エッチングガスからプラズマを生成するプラズマ生成部と、制御部とを有し、基板に含まれる被エッチング膜をエッチングするエッチング装置であって、前記制御部は、（ａ）前記処理チャンバ内に配置された前記基板支持台の上に前記被エッチング膜を含む前記基板を提供する工程と、（ｂ）前記基板支持台の温度を設定する工程と、（ｃ）前記エッチングガスからプラズマを生成する工程と、（ｄ）前記基板の温度を上昇させる工程と、（ｅ）前記基板の温度を下降させる工程と、（ｆ）前記（ｄ）の工程と前記（ｅ）の工程とを所定の回数繰り返す工程と、を含む工程を実行するように構成される、エッチング装置が提供される。 According to one aspect of the present disclosure, the processing chamber includes a processing chamber, a substrate support disposed in the processing chamber, a plasma generation section that generates plasma from an etching gas, and a control section, and includes a processing chamber that is included in the substrate. An etching apparatus for etching a film to be etched, wherein the control unit includes the steps of: (a) providing the substrate including the film to be etched on the substrate support disposed in the processing chamber; b) setting the temperature of the substrate support; (c) generating plasma from the etching gas; (d) increasing the temperature of the substrate; and (e) decreasing the temperature of the substrate. and (f) repeating the step ( d) and the step (e) a predetermined number of times.
Claims (16)
前記制御部は、
（ａ）前記処理チャンバ内に配置された前記基板支持台の上に前記被エッチング膜を含む前記基板を提供する工程と、
（ｂ）前記基板支持台の温度を設定する工程と、
（ｃ）前記エッチングガスからプラズマを生成する工程と、
（ｄ）前記基板の温度を上昇させる工程と、
（ｅ）前記基板の温度を下降させる工程と、
（ｆ）前記（ｄ）の工程と前記（ｅ）の工程とを所定の回数繰り返す工程と、
を含む工程を実行するように構成される、エッチング装置。 An etching apparatus that etches a film to be etched included in a substrate, and includes a processing chamber, a substrate support placed in the processing chamber, a plasma generation section that generates plasma from an etching gas, and a control section. hand,
The control unit includes:
(a) providing the substrate including the film to be etched on the substrate support disposed in the processing chamber;
(b) setting the temperature of the substrate support;
(c) generating plasma from the etching gas;
(d) increasing the temperature of the substrate;
(e) lowering the temperature of the substrate;
(f) repeating the step (d) and the step (e) a predetermined number of times;
An etching apparatus configured to perform a process comprising:
前記（ｅ）の工程は、前記バイアス用の高周波電力の供給をオフ（ＯＦＦ）に制御する、
請求項１に記載のエッチング装置。 In the step (d) , the supply of high frequency power for bias is controlled to be ON,
The step (e) includes controlling the supply of high frequency power for bias to OFF.
The etching apparatus according to claim 1.
前記（ｅ）の工程は、前記バイアス用の高周波電力の供給を前記ハイ（ｈｉｇｈ）よりも低いロー（ｌｏｗ）に制御する、
請求項１に記載のエッチング装置。 In the step (d) , the supply of high frequency power for bias is controlled to high;
In the step (e), the supply of the bias high frequency power is controlled to be low, which is lower than the high.
The etching apparatus according to claim 1.
（ｉ）前記基板と前記基板支持台との間に伝熱媒体を供給する工程を更に実行するように構成され、
チラーから出力され、前記基板支持台に形成された流路に予め設定された閾値の温度よりも低い温調媒体が通流する場合、前記（ｄ）の工程は、前記基板と前記基板支持台との間の圧力を下げるために前記伝熱媒体の流量を制御し、前記（ｅ）の工程は、前記圧力を上げるために前記伝熱媒体の流量を制御する、
請求項１～３のいずれか一項に記載のエッチング装置。 The control unit includes:
(i) further configured to perform the step of supplying a heat transfer medium between the substrate and the substrate support;
When a temperature regulating medium outputted from a chiller and having a temperature lower than a preset threshold temperature flows through a flow path formed in the substrate support, the step (d) is performed on the substrate and the substrate support. controlling the flow rate of the heat transfer medium to reduce the pressure between the heat transfer medium and the step (e) controlling the flow rate of the heat transfer medium to increase the pressure;
The etching apparatus according to any one of claims 1 to 3.
（ｉ）前記基板と前記基板支持台との間に伝熱媒体を供給する工程を更に実行するように構成され、
チラーから出力され、前記基板支持台に形成された流路に予め設定された閾値の温度よりも高い温調媒体が通流する場合、前記（ｄ）の工程は、前記基板と前記基板支持台との間の圧力を上げるために前記伝熱媒体の流量を制御し、前記（ｅ）の工程は、前記圧力を下げるために前記伝熱媒体の流量を制御する、
請求項１～３のいずれか一項に記載のエッチング装置。 The control unit includes:
(i) further configured to perform the step of supplying a heat transfer medium between the substrate and the substrate support;
When a temperature regulating medium outputted from a chiller and having a temperature higher than a preset threshold value flows through a flow path formed in the substrate support, the step (d) is performed on the substrate and the substrate support. and controlling the flow rate of the heat transfer medium to increase the pressure between the heat transfer medium and the step (e), controlling the flow rate of the heat transfer medium to reduce the pressure.
The etching apparatus according to any one of claims 1 to 3.
前記制御部は、
（ｊ）前記電極に吸着電圧を供給する工程を更に実行するように構成され、
チラーから出力され、前記基板支持台に形成された流路に予め設定された閾値の温度よりも低い温調媒体が通流する場合、前記（ｄ）の工程は、前記電極に供給する吸着電圧をローに制御し、前記（ｅ）の工程は、前記電極に供給する吸着電圧をハイに制御する、
請求項１～５のいずれか一項に記載のエッチング装置。 The substrate support has an electrostatic chuck including an electrode,
The control unit includes:
(j) further configured to perform the step of supplying an adsorption voltage to the electrode;
When a temperature regulating medium output from the chiller and lower than a preset threshold temperature flows through the flow path formed in the substrate support, the step (d) is performed by increasing the adsorption voltage supplied to the electrodes. is controlled to be low, and the step (e) is to control the adsorption voltage supplied to the electrode to be high.
The etching apparatus according to any one of claims 1 to 5.
前記制御部は、
（ｊ）前記電極に吸着電圧を供給する工程を更に実行するように構成され、
チラーから出力され、前記基板支持台に形成された流路に予め設定された閾値の温度よりも高い温調媒体が通流する場合、前記（ｄ）の工程は、前記電極に供給する吸着電圧をハイに制御し、前記（ｅ）の工程は、前記電極に供給する吸着電圧をローに制御する、
請求項１～５のいずれか一項に記載のエッチング装置。 The substrate support has an electrostatic chuck including an electrode,
The control unit includes:
(j) further configured to perform the step of supplying an adsorption voltage to the electrode;
When a temperature regulating medium output from the chiller and having a temperature higher than a preset threshold temperature flows through the flow path formed in the substrate support, the step (d) is performed by increasing the adsorption voltage to be supplied to the electrode. is controlled to be high, and the step (e) is to control the adsorption voltage supplied to the electrode to be low.
The etching apparatus according to any one of claims 1 to 5.
請求項１～７のいずれか一項に記載のエッチング装置。 The step (e) lowers the temperature of the substrate to a temperature at which the etchant of the etching gas is adsorbed to the substrate.
An etching apparatus according to any one of claims 1 to 7.
請求項８に記載のエッチング装置。 The temperature of the substrate in the step (e) is -120°C or more and 40°C or less,
The etching apparatus according to claim 8.
請求項９に記載のエッチング装置。 The temperature of the substrate in the step (e) is -40°C or more and 20°C or less,
The etching apparatus according to claim 9.
請求項１～１０のいずれか一項に記載のエッチング装置。 In the step (d), the temperature of the substrate is raised to a temperature at which reaction products generated by etching the substrate volatilize.
The etching apparatus according to any one of claims 1 to 10.
請求項１～１１のいずれか一項に記載のエッチング装置。 The difference in temperature of the substrate in the step (d) and the step (e) is 10° C. or more,
The etching apparatus according to any one of claims 1 to 11.
請求項１～１２のいずれか一項に記載のエッチング装置。 The period of one cycle of repeating the step (f) is 0.1 Hz or more and 100 kHz or less,
The etching apparatus according to any one of claims 1 to 12.
請求項１３に記載のエッチング装置。 The duty ratio (Duty) indicating the time of the step (d) with respect to the time of one cycle is 10% or more and 70% or less,
The etching apparatus according to claim 13.
請求項１４に記載のエッチング装置。 The duty ratio is 30% or more and 50% or less,
The etching apparatus according to claim 14.
（ｂ）前記基板支持台の温度を設定する工程と、
（ｃ）エッチングガスからプラズマを生成する工程と、
（ｄ）前記基板の温度を上昇させる工程と、
（ｅ）前記基板の温度を下降させる工程と、
（ｆ）前記（ｄ）の工程と前記（ｅ）の工程とを所定の回数繰り返す工程と、
を含むエッチング方法。
(a) providing a substrate containing a film to be etched on a substrate support disposed within a processing chamber;
(b) setting the temperature of the substrate support;
(c) generating plasma from etching gas;
(d) increasing the temperature of the substrate;
(e) lowering the temperature of the substrate;
(f) repeating the step (d) and the step (e) a predetermined number of times;
Etching methods including.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110128457A TW202209480A (en) | 2020-08-17 | 2021-08-03 | Etching method and etching apparatus |
| US17/444,605 US20220051899A1 (en) | 2020-08-17 | 2021-08-06 | Etching method and etching apparatus |
| KR1020210105519A KR20220022101A (en) | 2020-08-17 | 2021-08-10 | Etching method and etching apparatus |
| CN202110912034.8A CN114078700A (en) | 2020-08-17 | 2021-08-10 | Etching method and etching apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063066403P | 2020-08-17 | 2020-08-17 | |
| US63/066,403 | 2020-08-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022033696A JP2022033696A (en) | 2022-03-02 |
| JP2022033696A5 true JP2022033696A5 (en) | 2024-02-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021110813A Pending JP2022033696A (en) | 2020-08-17 | 2021-07-02 | Method for etching and device for etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2022033696A (en) |
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2021
- 2021-07-02 JP JP2021110813A patent/JP2022033696A/en active Pending
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