JP2021532256A - 粒子をコーティングする方法及び装置 - Google Patents
粒子をコーティングする方法及び装置 Download PDFInfo
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Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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Abstract
Description
本出願は、2018年7月19日に出願された米国仮特許出願番号62/700,753に対する優先権を主張し、その開示は参照により本明細書に援用される。
コーティングされる粒子を保持するよう構成された真空チャンバ、
真空チャンバの出口を介して真空チャンバからガスを排気するための真空ポート、
真空チャンバ上のガス入口を介して処理ガスを粒子中に流すよう構成された化学物質供給システム、
テーブルの第1の取付面上の真空チャンバを支持するためのテーブル、
基部、及びテーブルと基部との間に位置し、第1の取付面に対向する第2の取付面上のテーブルを支持する一又は複数の弾性部材、
テーブルと基部との間に位置する一又は複数の振動アクチュエータ、並びに
一又は複数の振動アクチュエータが真空チャンバ内に保持された粒子に振動運動を誘導するのに十分な振動運動をテーブル中に生成させるよう構成されたコントローラ、
を含む粒子をコーティングするためのリアクタで具体化され得る。
コーティングされる粒子を保持するよう構成された真空チャンバ、
真空チャンバの出口を介して真空チャンバからガスを排気するための真空ポート、
真空チャンバ上のガス入口を介して処理ガスを粒子中に流すよう構成された化学物質供給システム、
真空チャンバの第1の取付面上に位置する一又は複数の振動アクチュエータ、並びに
一又は複数の振動アクチュエータが真空チャンバ内に保持された粒子に振動運動を誘導するのに十分な振動運動を真空チャンバ中に生成させるよう構成されたコントローラ、
を含む粒子をコーティングするためのリアクタで具体化され得る。
用語「薬物」とは、その最も広い意味において、すべての小分子(例えば非生物学的)APIを含む。薬物は、鎮痛剤、麻酔剤、抗炎症剤、駆虫剤、抗不整脈剤、抗喘息剤、抗生物質、抗がん剤、抗凝固剤、抗うつ剤、抗糖尿病剤、抗てんかん剤、抗ヒスタミン剤、鎮咳剤、降圧剤、抗ムスカリン剤、抗マイコバクテリア剤、抗腫瘍剤、抗酸化剤、解熱剤、免疫抑制剤、免疫刺激剤、抗甲状腺剤、抗ウイルス剤、抗不安剤、催眠剤、神経弛緩剤、収斂剤、静菌剤、ベータアドレナリン受容体遮断剤、血液製品、代用血液、気管支拡張剤、緩衝剤、心臓変力剤、化学療法剤、造影剤、コルチコステロイド、鎮咳剤、去痰剤、粘液溶解剤、利尿薬、ドーパミン作動薬、抗パーキンソン病剤、フリーラジカル除去薬、成長因子、止血剤、免疫剤、脂質調節剤、筋弛緩剤、副交感神経刺激剤、副甲状腺カルシトニン、ビホスホネート、プロスタグランジン、放射性医薬品、ホルモン、性ホルモン、抗アレルギー剤、食欲刺激剤、食欲抑制剤、ステロイド、交感神経刺激剤、甲状腺剤、ワクチン、血管拡張剤及びキサンチンからなる群より選択され得る。
薬学的に許容される添加物には、限定されないが、以下が含まれる:
(1)ポリエチレングリコール(PEG)、ポリビニルピロリドン(PVP)、ラウリル硫酸ナトリウム、ポリビニルアルコール、クロスポビドン、ポリビニルピロリドン−ポリビニルアクリレートコポリマー、セルロース誘導体、ヒドロキシプロピルメチルセルロース、ヒドロキシプロピルセルロース、カルボキシメチルエチルセルロース、ヒドロキシプロピルメチルセルロースフタレート、ポリアクリレート及びポリメタクリレート、尿素、糖、ポリオール、カルボマー及びそれらのポリマー、乳化剤、糖ガム、デンプン、有機酸及びそれらの塩、ビニルピロリドン及び酢酸ビニルを含む界面活性剤及びポリマー;
(2)セルロース、架橋ポリビニルピロリドン、微結晶性セルロースなどの結合剤;
(3)ラクトース一水和物、無水ラクトース、微結晶性セルロース、さまざまなデンプンなどの充填剤;
(4)コロイド状二酸化ケイ素、タルク、ステアリン酸、ステアリン酸マグネシウム、ステアリン酸カルシウム、シリカゲルを含む、圧縮される粉末の流動性に作用する薬剤などの潤滑剤;
(5)スクロース、キシリトール、サッカリンナトリウム、チクロ、アスパルテーム、及びアセスルファムKを含む天然又は人工甘味料などの甘味料;
(6)香味剤;
(7)ソルビン酸カリウム、メチルパラベン、プロピルパラベン、安息香酸及びその塩、ブチルパラベンなどのパラヒドロキシ安息香酸の他のエステル、エチル又はベンジルアルコールなどのアルコール、フェノールなどのフェノール系化学物質、又は塩化ベンザルコニウムなどの第4級化合物などの保存料;
(8)バッファー;
(9)微結晶性セルロース、ラクトース、二塩基性リン酸カルシウム、糖類、及び/又は先述のいずれかの混合物などの薬学的に許容される不活性充填剤などの希釈剤;
(10)コーンスターチ、ジャガイモデンプン、トウモロコシでんぷん、及び加工デンプン、並びにそれらの混合物などの湿潤剤;
(11)崩壊剤;クロスカルメロースナトリウム、クロスポビドン、デンプングリコール酸ナトリウムなど;並びに
(12)有機酸(例えば、クエン酸、酒石酸、リンゴ酸、フマル酸、アジピン、コハク酸、及びアルギン酸並びに無水物及び酸性塩)、又は炭酸塩(例えば、炭酸ナトリウム、炭酸カリウム、炭酸マグネシウム、グリシン炭酸ナトリウム、L−リジン炭酸塩、及び炭酸アルギニン)又は重炭酸塩(例えば、重炭酸ナトリウム又は重炭酸カリウム)などの発泡性結合物質(effervescent couple)などの発泡剤。
用語「金属酸化物材料」は、その最も広い意味において、金属と見なされる元素と酸素ベースの酸化剤との反応から形成されるすべての材料を含む。例示的な金属酸化物材料には、限定されないが、酸化アルミニウム、二酸化チタン、酸化鉄、酸化ガリウム、酸化マグネシウム、酸化亜鉛、酸化ニオブ、酸化ハフニウム、酸化タンタル、酸化ランタン、及び二酸化ジルコニウムが含まれる。例示的な酸化剤には、限定されないが、水、オゾン、及び無機過酸化物が含まれる。
原子層堆積は、元素又は化合物の自己制御的単層の逐次的な添加が原子又は分子単層のレベルに制御された厚さ及び均一性を有する膜の堆積を可能にする薄膜堆積技術である。自己制御とは、一度に一つの原子層のみが形成され、表面を再生してさらなる堆積を可能にするために、後続の処理工程が必要であることを意味する。
分子層堆積は、原子層堆積と類似しているが、有機前駆体を使用し、有機薄膜を形成する。典型的なMLDプロセス中に、二つのホモ二官能性前駆体が使用される。第1の前駆体はチャンバに導入される。第1の前駆体の分子は、対応する結合化学を介して基材表面上の反応基と反応して、第1の前駆体の分子層を新たな反応性部位を有する基材表面に添加する。パージ後、第2の前駆体が導入され、第2の前駆体の分子は、第1の前駆体によって提供される新しい反応部位と反応して、第2の前駆体に結合した第1の前駆体の分子層を生成する。この後に別のパージサイクルが続く。
図1は、薄膜コーティングで粒子をコーティングするためのリアクタシステム100を図示している。リアクタシステム100は、ALD及び/又はMLDコーティング条件を使用してコーティングを実施することができる。リアクタシステム100は、堆積プロセス(ALD又はMLD)が高温処理温度(50℃超、例えば50−100℃)又は低温処理温度(例えば50℃未満、例えば35℃以下)で実施されることを可能にする。例えば、リアクタシステム100は、22−35℃、例えば25−35℃、25−30℃、又は30−35℃の温度で主にALDにより粒子上に薄膜金属酸化物を形成することができる。通常、粒子は、そのような温度のままであり得るか又はそのような温度で維持され得る。これは、反応ガス及び/又はリアクタチャンバの内面をそのような温度のままにするか又は維持させることによって達成することができる。例えば、加熱は、チャンバ本体に組み込まれたヒータカートリッジにより、熱交換器の使用を伴うチャンバ本体中の水路により、又はチャンバ本体上のヒータジャケットにより達成することができる。
図2は、粒子をコーティングするためのリアクタシステムを用いる例示のプロセスのフロー図である。第1の工程において、粒子は、真空チャンバの処理空間に分注される(202)。図1を参照して記載すると、リアクタシステム100には、コーティングされる粒子のリアクタシステムへのロード/アンロードに使用することができるリッド102を有する真空チャンバ101が含まれる。第1のフィルタ105、第2のフィルタ106、真空チャンバの一又は複数の側壁103により画定される処理空間107は、リッド102を通じて、例えばロード/アンロードプロセス中に第1のフィルタ105を除去又は調整することによりロードされた粒子120を受け取ることができる。
i)化学物質分配システム110は、粒子120が第1の反応ガスで飽和するまで、第1の反応ガス、例えば、TMAを、供給源124aからガス入口108を介して真空チャンバ101に流すように操作される。例えば、第1の反応ガスは、規定の流量で及び規定の期間、又はセンサがチャンバ101中の第1の反応ガスの規定の第1の圧力又は分圧を測定するまで流れることができる。いくつかの実施態様では、第1の反応ガスは、チャンバへ流れるときに不活性ガスと混合される。規定圧力又は分圧は、0.1Torrから反応ガスの飽和圧力の半分であり得る。
ii)第1の反応ガスの流れは停止され、真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から100mTorr、例えば50mTorrまで排気する。
iii)化学物質分配システム110は、不活性ガス、例えばN2のみを供給源124aからガス入口108を介してチャンバ101へ流すよう操作される。不活性ガスは、規定の流量で及び規定の期間、又はセンサがチャンバ101中の不活性ガスの規定の第2の圧力を測定するまで流れることができる。第2の規定圧力は1から100Torrであり得る。
iv)真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から500mTorr、例えば50mTorrまで排気する。
v)化学物質分配システム110は、粒子120が第2の反応ガスで飽和するまで、第2の反応ガス、例えばH2Oを、供給源124bからガス入口108を介してチャンバ101に流すように操作される。やはり、第2の反応ガスは、規定の流量で及び規定の期間、又はセンサがチャンバ101中の第2の反応ガスの規定の第3の圧力又は分圧を測定するまで流れることができる。いくつかの実施態様では、第2の反応ガスは、チャンバへ流れるときに不活性ガスと混合される。第3の圧力は、0.1Torrから第2の反応ガスの飽和圧力の半分であり得る。
vi)真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から500mTorr、例えば50mTorrまで排気する。
i)化学物質分配システム110は、第1の規定圧力がチャンバ101で達成されるまで、第1の反応ガス、例えばTMAを、供給源124aからガス入口108を介してチャンバ101に流すように操作される。規定圧力は、0.1Torrから反応ガスの飽和圧力の半分であり得る。
ii)第1の反応ガスの流れは停止され、例えばコントローラ中のタイマーで測定されるように規定遅延時間の経過が可能になる。これにより、第1の反応ガスが真空チャンバ101中の粒子120を通って流れ、粒子120の表面と反応することが可能になる。
iii)真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から100mTorr、例えば50mTorrまで排気する。
iv)化学物質分配システム110は、第2の規定圧力が達成されるまで、不活性ガス、例えばN2を、供給源124eからガス入口108を介してチャンバ101に流すように操作される。第2の規定圧力は1から100Torrであり得る。
v)不活性ガスの流れは停止され、例えばコントローラ中のタイマーで測定されるように規定遅延時間の経過が可能になる。これにより、不活性ガスが粒子120を通じて拡散し、反応ガス及び任意の蒸気の副生成物を置換する。
vi)真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から500mTorr、例えば50mTorrまで排気する。
vii)化学物質分配システム110は、第3の規定圧力が達成されるまで、第2の反応ガス、例えばH2Oを、供給源124bからガス入口108を介してチャンバ101に流すように操作される。第3の圧力は、0.1Torrから反応ガスの飽和圧力の半分であり得る。
viii)第2の反応ガスの流れは停止され、例えばコントローラ中のタイマーで測定されるように規定遅延時間の経過が可能になる。これにより、第2の反応ガスが粒子120を通って流れ、真空チャンバ101内で粒子の表面と反応することが可能になる。
ix)真空源116はチャンバ101を例えば1Torr未満の圧力まで、例えば1から500mTorr、例えば50mTorrまで排気する。
Claims (15)
- 粒子をコーティングするための方法であって、
真空チャンバの処理空間中に粒子を分注することであって、処理空間が真空チャンバの一又は複数の側壁、第1のフィルタ及び第2のフィルタにより画定されている、粒子を分注すること;
真空チャンバ上の真空ポートを通じて処理空間を排気すること;
真空チャンバを30Hzと300Hzの間の周波数で振動させることにより、真空チャンバの処理空間に堆積された複数の粒子を撹拌すること;
真空チャンバ上のガス入口を通して及び第2のフィルタを通して第1の前駆体を処理空間中に流し、粒子が撹拌されるときに複数の粒子の粒子表面と第1の前駆体を反応させて、第1の層を形成すること;及び
ガス入口を介して第2の前駆体を処理空間中に流し、粒子が撹拌されるときに第1の層と第2の前駆体を反応させて、薄膜を形成することを含む、
粒子をコーティングするための方法。 - 粒子を真空チャンバの処理空間中に分注することが、粒子を封入する多孔性処理容器を処理空間中に置くことをさらに含む、請求項1に記載の方法。
- 第1の前駆体を流すことと第2の前駆体を流すこととの間にパージガスを処理空間中に流すことをさらに含む、請求項1に記載の方法。
- 第1の前駆体を処理空間に流すこと、パージガスを処理空間に流すこと、及び第2の前駆体を処理空間に流すことの複数の繰り返しサイクルをさらに含む、請求項3に記載の方法。
- 原子層堆積又は分子層堆積により粒子をコーティングすることを含み、複数の粒子が約300ミクロン未満の寸法を有する、請求項1に記載の方法。
- 粒子をコーティングするためのリアクタであって、
コーティングされる複数の粒子を保持するよう構成された真空チャンバ;
真空チャンバの出口を介して真空チャンバからガスを排気するための真空ポート;
真空チャンバ上のガス入口を介して処理ガスを複数の粒子中に流すよう構成された化学物質供給システム;
テーブルの第1の取付面上の真空チャンバを支持するためのテーブル;
基部、及びテーブルと基部との間に位置し、第1の取付面に対向する第2の取付面上のテーブルを支持する一又は複数の弾性部材;
テーブルと基部との間に位置する一又は複数の振動アクチュエータ;並びに
一又は複数の振動アクチュエータが真空チャンバ内に保持された複数の粒子に振動運動を誘導するのに十分な振動運動をテーブル中に生成させるよう構成されたコントローラ、
を含む、粒子をコーティングするためのリアクタ。 - 真空チャンバが、リッド、底部、一又は複数の側壁、リッドと底部との間に配置された第1のフィルタ、及び第1のフィルタと底部との間に配置された第2のフィルタをさらに含む、請求項6に記載のリアクタ。
- 第1のフィルタ、第2のフィルタ、及び一又は複数の側壁が、第1の空間を画定する、請求項7に記載のリアクタ。
- 複数の粒子を保持する多孔性処理容器をさらに含み、多孔性処理容器が第1の空間内に位置している、請求項8に記載のリアクタ。
- 多孔性処理容器が第1のフィルタ及び第2のフィルタを含む、請求項9に記載のリアクタ。
- 第2のフィルタが、第2のフィルタと、底部と、一又は複数の側壁との間の第2の空間を画定するように底部から離間されており、第1のフィルタが、第1のフィルタと、リッドと、一又は複数の側壁との間の第3の空間を画定するようにリッドから離間されている、請求項7に記載のリアクタ。
- 処理ガスが第3の空間を通って第1の空間から排気されるように、真空チャンバ上の真空ポートが真空チャンバ上に位置している、請求項11に記載のリアクタ。
- 処理ガスが第2の空間を介して第1の空間に流れるように、真空チャンバ上のガス入口が真空チャンバ上に位置している、請求項12に記載のリアクタ。
- コントローラが、一又は複数の振動アクチュエータが30Hzと300Hzの間の振動周波数を誘導させるように、構成されている、請求項6に記載のリアクタ。
- 粒子をコーティングするためのリアクタであって、
コーティングされる複数の粒子を保持するよう構成された真空チャンバ;
真空チャンバの出口を介して真空チャンバからガスを排気するための真空ポート;
真空チャンバ上のガス入口を介して処理ガスを複数の粒子に流すよう構成された化学物質供給システム;
真空チャンバの第1の取付面上に位置する一又は複数の振動アクチュエータ;並びに
一又は複数の振動アクチュエータが真空チャンバ内に保持された複数の粒子に振動運動を誘導するのに十分な振動運動を真空チャンバ中に生成させるよう構成されたコントローラ、
を含む、粒子をコーティングするためのリアクタ。
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