JP2021525458A - 半導体パッケージの製造方法 - Google Patents
半導体パッケージの製造方法 Download PDFInfo
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- JP2021525458A JP2021525458A JP2020567090A JP2020567090A JP2021525458A JP 2021525458 A JP2021525458 A JP 2021525458A JP 2020567090 A JP2020567090 A JP 2020567090A JP 2020567090 A JP2020567090 A JP 2020567090A JP 2021525458 A JP2021525458 A JP 2021525458A
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- conductive film
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Images
Classifications
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
Description
本出願は、2019年1月29日付の韓国特許出願第10−2019−0011317号および2020年1月22日付の韓国特許出願第10−2020−0008888号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は本明細書の一部として含まれる。
本発明は、信頼性が向上した半導体パッケージの製造方法に関する。
複数のシリコン貫通電極が具備された基板に非導電性フィルムをラミネーションする段階;および
前記非導電性フィルムがラミネーションされた基板に紫外線を照射する段階;を含み、
前記非導電性フィルムは、前記紫外線照射前後で溶融粘度の変化率が1〜30%である、
半導体パッケージの製造方法を提供する。
図1は、本発明の半導体パッケージ方法の一実施形態を示す図である。
図2は、本発明の一実施形態による非導電性フィルムの構造を簡略に示す図である。
前記硬化剤としては、ノボラック系フェノール樹脂が好ましく適用可能である。
前記硬化触媒は、前記硬化剤の作用や前記半導体接着用樹脂組成物の硬化を促進させる役割を果たし、半導体接着フィルムなどの製造に使用されると知られた硬化触媒を大きな制限なく使用可能である。
前記無機充填材としては、アルミナ、シリカ、硫酸バリウム、水酸化マグネシウム、炭酸マグネシウム、ケイ酸マグネシウム、酸化マグネシウム、ケイ酸カルシウム、炭酸カルシウム、酸化カルシウム、水酸化アルミニウム、窒化アルミニウム、およびホウ酸アルミニウムからなる群より選択された1種以上の無機粒子が適用可能である。
前記スルホキシド類溶媒は、ジメチルスルホキシドなどであってもよい。
製造例1
VH−4170(DIC製品、ビスフェノールAノボラック樹脂)にエピクロロヒドリンと2−アクリロイルオキシエチルイソシアネートを1:9のモル比で触媒と共に反応させて、光硬化と熱硬化が同時に可能な化合物を製造した。
図1の工程により半導体パッケージを製造した。半導体パッケージ工程に用いた非導電性フィルムは、図2の構造を有する部分的に硬化した接着層を有するフィルムを密封材料として使用した。
エポキシ樹脂の硬化剤であるフェノール樹脂KH−6021(DIC社製品、ビスフェノールAノボラック樹脂)40g;エポキシ樹脂としてRE−310S(日本化薬製品、ビスフェノールAエポキシ樹脂)30g;YDCN−500−5P(Kukdo化学製品、クレゾールノボラックエポキシ樹脂)35g、光硬化剤としてA−DCP(新中村社製品、トリシクロメタンジメタノールジアクリレート)10g、ジペンタエリスリトールヘキサアクリレート0.5g、光開始剤としてDarocur TPO1g、熱可塑性アクリレート樹脂KG−3015(Mw:90万、ガラス転移温度:10℃)15g;触媒(2−phenyl−4,5−dihydroxymethyl imidazole)1.5g;フラックス1gおよび無機充填材(SC−2050、アドマテックスの球状シリカ)75gをメチルエチルケトンに混合して、半導体回路接続用接着剤組成物(固形分45重量%の濃度)を得た。
コンマコーターを用いて、通常のアクリル系樹脂を含む粘着性樹脂組成物を用いて、ポリエチレンテレフタレートフィルム(厚さ38μm)上に塗布した後、乾燥して、約20μmの厚さの粘着層を形成した。以後、前記コンマコーターを用いて上述した接着剤樹脂組成物をコーティングし、110℃で3分間乾燥して、約20μmの厚さの接着層が形成された接着フィルムを得た。以後、前記接着層の上部に通常の保護フィルム(離型処理されたポリエチレンテレフタレート)を約20μmの厚さに形成した。
複数のシリコン貫通電極が具備され、高さ15μmおよびピッチ50μmの銅ピラー上に無鉛ソルダ(SnAgCu)が3μmの高さに形成されている半導体素子であるバンプチップ(4.5mm×4.5mm)を含むウエハを準備した。
前記非導電性接着フィルムから保護フィルムを除去し、前記ウエハのバンプ面に前記接着フィルムの接着層を位置させて80℃で真空ラミネーションを進行させた後、それぞれのチップに個別化した。
非導電性フィルムが真空ラミネーションされた個別化されたバンプチップに対して、500mJ/cm2の光量で紫外線を照射した。
前記紫外線の照射が完了すると、粘着層の粘着力が低くなるので、非導電性フィルムの接着層の上部にある粘着層が離型基材フィルムと共に簡単に除去された。
以後、前記接着層がラミネーションされている個別化されたバンプチップに対して、熱圧着ボンダを用いて、50μmのピッチの接続パッドを有している6mm×8mmの基材チップに100Nにて70℃で3秒間仮接合後、260℃に加熱して4秒間熱圧着ボンディングを進行させた。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
エポキシ樹脂の硬化剤であるフェノール樹脂GPH−65(日本化薬剤品、ビフェニルノボラック樹脂)50g;エポキシ樹脂としてRE−310S(日本化薬製品、ビスフェノールAエポキシ樹脂、エポキシ当量180g/eq)20g;YDCN−500−5P(Kukdo化学製品、クレゾールノボラックエポキシ樹脂)30g、光硬化性樹脂として製造例1の化合物15g、光開始剤としてOXE01 0.3g;触媒(2−phenyl−4,5−dihydroxymethyl imidazole)1.5g;フラックス1g;および無機充填材(SC−2050、アドマテックスの球状シリカ)90gをメチルエチルケトンに混合して、半導体回路接続用接着剤組成物(固形分45重量%の濃度)を得た。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
実施例2に、熱可塑性樹脂としてKG−3015 15gを追加的に入れたことを除けば、実施例1と同様にして半導体回路接続用接着剤組成物を得た。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
実施例1において、光硬化剤のA−DCP(新中村社製品、トリシクロメタンジメタノールジアクリレート)とジペンタエリスリトールヘキサアクリレート、光開始剤のDarocur TPOを入れなかったことを除けば、実施例1と同様の方法で接着剤組成物を得た。
実施例3において、非導電性接着フィルムをラミネーションした後に、紫外線照射を実施せずに熱圧着ボンディングを実施したことを除けば、実施例3と同様の方法で半導体装置を得た。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
実施例2において、GPH−65をKA−1163(DIC製品、クレゾールノボラック樹脂)40gに変更し、RE−310SをEOCN−104Sに変更し、無機充填材SC−2050(アドマテックスの球状シリカ、平均粒径500nm)をYC100C(アドマテックスの球状シリカ、平均粒径100nm)340gに変更したことを除けば、実施例2と同様の方法で接着剤組成物を得た。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
実施例2において、光硬化性樹脂として製造例1の化合物70g、ジペンタエリスリトールヘキサアクリレート5g、光開始剤としてOXE01 0.8g、無機充填材(SC−2050、アドマテックスの球状シリカ)100gを用いたことを除けば、実施例2と同様の方法で接着剤組成物を得た。
下記の接着剤組成物を用いたことを除き、実施例1と同様の方法で、接着フィルムおよび半導体装置を製造した。
エポキシ樹脂の硬化剤であるフェノール樹脂VH−4170(DIC製品、ビスフェノールAノボラック樹脂)50g;エポキシ樹脂としてRE−310S(日本化薬製品、ビスフェノールAエポキシ樹脂、エポキシ当量180g/eq)75g、光硬化性樹脂としてA−BPE−10(新中村社製品、2.2Bis[4−(アクリロキシポリエトキシ)フェニル]プロパン(エチレンオキシド10モルの付加品))10g、光開始剤としてDarocur TPO0.5g;触媒(2−phenyl−4,5−dihydroxymethyl imidazole)1g;フラックス1g;および無機充填材(SC−2050、アドマテックスの球状シリカ)40gをメチルエチルケトンに混合して、半導体回路接続用接着剤組成物を得た。
(1)溶融粘度および粘度変化率の測定
実施例および比較例でそれぞれ得られた接着フィルムを厚さ320μmになるまで重ねて積層した後、80℃のロールラミネータを用いてラミネートした。以後、各試験片を直径8mmの円形に成形した後、TA社のadvanced rheometric expansion system(ARES)を用いて、5rad/sの剪断速度で10℃/分の昇温速度を適用して測定値の最も低い数値の粘度値を溶融粘度として判断した。紫外線照射後の溶融粘度は、非導電性接着フィルムのキャリアフィルムの面側から500mJ/cm2の光量の紫外線を照射した後、ラミネートして、同様の方法で溶融粘度を測定した。
実施例および比較例でそれぞれ得られた半導体装置に対して、Scanning Acousitic Tomography(SAT)によりバンプチップと基材チップとの間にボイドの占める面積が1%以下になるものを合格(○)、そして1%超えるものを不合格(×)と評価した。
実施例および比較例でそれぞれ得られた半導体装置に対して、デイジーチェーン接続を確認できたものを合格(○)、そしてデイジーチェーン接続を確認できなかったものを不合格(×)と評価した。
実施例および比較例でそれぞれ得られた半導体装置に対して、接続部を断面研磨して露出させ、光学顕微鏡で観察した。接続部に接着組成物のトラッピングが見られず、ハンダが配線に十分に濡れているものを合格(○)、そしてそれ以外のものを不合格(×)と評価した。
実施例および比較例でそれぞれ得られた半導体装置に対して、光学顕微鏡を用いてバンプチップ上で観察して、非導電性接着フィルムが流れ出たフィレットの最大長さを測定した。
Claims (12)
- 複数のシリコン貫通電極が具備された基板に非導電性フィルムをラミネーションする段階;および
前記非導電性フィルムがラミネーションされた基板に紫外線を照射する段階;を含み、
前記非導電性フィルムは、前記紫外線照射前後で溶融粘度の変化率が1〜30%である、
半導体パッケージの製造方法。 - 前記非導電性フィルムは、前記紫外線照射前後で溶融粘度の変化率が15〜27%である、請求項1に記載の半導体パッケージの製造方法。
- 前記非導電性フィルムがラミネーションされた基板に紫外線を照射する段階は、0.1〜1000mJ/cm2の光量で行う、請求項1に記載の半導体パッケージの製造方法。
- 前記非導電性フィルムは、離型処理された基材フィルム、粘着層および接着層を含む、請求項1に記載の半導体パッケージの製造方法。
- 前記非導電性フィルムにおいて、接着層は、
(a)光硬化可能な不飽和官能基を有する光硬化性樹脂、(b)熱硬化性樹脂および硬化剤、(c)光開始剤、(d)無機充填材および(e)触媒を含む樹脂組成物を含む、請求項4に記載の半導体パッケージの製造方法。 - 前記光硬化性樹脂は、熱硬化性樹脂および硬化剤の総和100重量部を基準として3〜45重量部含まれる、請求項4に記載の半導体パッケージの製造方法。
- 前記非導電性フィルムは、紫外線を照射する前に800〜15000Pa・sの溶融粘度を有し、紫外線を照射した後に1000〜18000Pa・sの溶融粘度を有する、請求項1に記載の半導体パッケージの製造方法。
- 前記非導電性フィルムをラミネーションする段階は、40〜130℃で真空条件下にて行う、請求項1に記載の半導体パッケージの製造方法。
- 前記複数のシリコン貫通電極が具備された基板は、
半導体基板の内部を貫通する複数のシリコン貫通ビアおよび前記シリコン貫通ビアを満たす複数のバンプが形成されている、請求項1に記載の半導体パッケージの製造方法。 - 前記紫外線を照射する段階の後には、
前記紫外線が照射された非導電性フィルムがラミネーションされた基板と、
前記非導電性フィルムがラミネーションされた基板に対向して位置する複数の電極パッドが形成された半導体基板とを熱圧着ボンディングする段階をさらに含む、請求項1に記載の半導体パッケージの製造方法。 - 前記熱圧着ボンディングする段階は、200〜300℃の温度で10N〜300Nの圧力条件下にて2〜10秒間行う、請求項10に記載の半導体パッケージの製造方法。
- 前記熱圧着ボンディングする段階の前に、非導電性フィルムの粘着層を除去する段階をさらに含む、請求項10に記載の半導体パッケージの製造方法。
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