JP2021524162A - ガス状副生成物軽減およびフォアライン洗浄のための装置 - Google Patents
ガス状副生成物軽減およびフォアライン洗浄のための装置 Download PDFInfo
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32844—Treating effluent gases
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Abstract
Description
Claims (15)
- 処理チャンバのための軽減システムであって、
前記処理チャンバに結合された真空ポンプを含む排気システムと、
前記処理チャンバと前記真空ポンプとの間の前記排気システムに結合された排気冷却装置と、
前記処理チャンバの下流でおよび前記排気冷却装置の前で前記排気システムにプラズマを供給するための出口を有する遠隔プラズマ源であり、前記遠隔プラズマ源が、酸素ガス源、洗浄ガス源、および不活性ガス源に接続される、遠隔プラズマ源と
を含み、
前記遠隔プラズマ源の前記出口が、排気フォアラインへの前記排気冷却装置の接続の入口に近接する位置で前記排気フォアラインに入るように流体的に接続される、軽減システム。 - コントローラをさらに含み、前記コントローラが、前記遠隔プラズマ源に、解離ガスを前記排気システムにさらに供給させる、請求項1に記載の軽減システム。
- 前記洗浄ガス源が、NF3、NF2H、CHF3、またはCF4を前記遠隔プラズマ源に供給し、前記不活性ガス源が、アルゴンを前記遠隔プラズマ源に供給する、請求項1に記載の軽減システム。
- 前記遠隔プラズマ源の前記出口が、前記排気冷却装置の前記入口から上流に6〜18インチ内の位置で前記排気フォアラインに入るように流体的に接続される、請求項1に記載の軽減システム。
- 前記遠隔プラズマ源が、誘導結合プラズマ源、容量結合プラズマ源、直流プラズマ源、またはマイクロ波プラズマ源のうちの1つである、請求項1に記載の軽減システム。
- 処理チャンバと、
前記処理チャンバに結合された真空ポンプを含む排気システムと、
前記処理チャンバと前記真空ポンプとの間の前記排気システムに結合された排気冷却装置と、
前記処理チャンバの下流でおよび前記排気冷却装置の前で前記排気システムにプラズマを供給するための遠隔プラズマ源であり、前記遠隔プラズマ源が、酸素ガス源、洗浄ガス源、および不活性ガス源に接続される、遠隔プラズマ源と
を含む処理システムであって、
前記遠隔プラズマ源の出口が、排気フォアラインへの前記排気冷却装置の接続の入口に近接する位置で前記排気フォアラインに入るように流体的に接続される、処理システム。 - コントローラをさらに含み、前記コントローラが、前記遠隔プラズマ源に、解離ガスを前記排気システムにさらに供給させる、請求項6に記載の処理システム。
- 前記洗浄ガス源が、NF3、NF2H、CHF3、またはCF4を前記遠隔プラズマ源に供給し、前記不活性ガス源が、アルゴンを前記遠隔プラズマ源に供給する、請求項6に記載の処理システム。
- 前記遠隔プラズマ源の前記出口が、前記排気冷却装置の前記入口から上流に6〜18インチ内の位置で前記排気フォアラインに入るように流体的に接続される、請求項6に記載の処理システム。
- 前記遠隔プラズマ源が、誘導結合プラズマ源、容量結合プラズマ源、直流プラズマ源、またはマイクロ波プラズマ源のうちの1つである、請求項6に記載の処理システム。
- コントローラを含むシステムであって、前記コントローラが、中央処理装置およびメモリを含み、前記メモリが、前記中央処理装置によって実行されると、以下の動作を実行させるソフトウェアをさらに含み、前記以下の動作が、
処理システムの処理チャンバで実行された堆積プロセスからの排気ガスを、遠隔プラズマ源から発生した酸化プラズマを使用して処理することであり、前記酸化プラズマが酸化ガスを含む、処理することと、
前記処理システムの前記処理チャンバで実行された洗浄プロセスからの排気ガスを、前記遠隔プラズマ源から発生した洗浄プラズマを使用して処理することであり、前記洗浄プラズマが洗浄ガスを含む、処理することと
である、システム。 - 処理チャンバの排気システムにおいてガスを処理するための方法であって、前記方法が、
前記処理チャンバで実行された堆積プロセスからの排気ガスを、遠隔プラズマ源から発生した酸化プラズマを使用して処理することと、
排気冷却装置において粒子をトラップすることと、
前記処理チャンバで実行された洗浄プロセスからの排気ガスを、前記遠隔プラズマ源から発生した洗浄プラズマを使用して処理することであり、前記洗浄プラズマが、前記排気冷却装置内の前記トラップされた粒子と反応し、前記排気冷却装置を洗浄する、処理することと
を含む、方法。 - 前記遠隔プラズマ源が、NF3、NF2H、CHF3、またはCF4を前記遠隔プラズマ源に供給する洗浄ガス源に流体的に結合される、請求項12に記載の方法。
- 前記遠隔プラズマ源が、前記排気冷却装置のフォアライン入口から上流に6〜18インチ内の位置で排気フォアラインに入るように流体的に接続される、請求項12に記載の方法。
- 前記遠隔プラズマ源は、前記排気フォアラインがチャンバ排気口に結合する場所から少なくとも10フィートの場所で前記排気フォアラインに入るように流体的に接続される、請求項12に記載の方法。
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CN114733857B (zh) * | 2021-01-07 | 2023-09-15 | 中国科学院微电子研究所 | 一种真空管线清洁***及方法 |
CN113066740B (zh) * | 2021-03-26 | 2022-04-01 | 长江存储科技有限责任公司 | 一种半导体设备和清洗方法 |
KR20240073998A (ko) * | 2021-10-12 | 2024-05-27 | 램 리써치 코포레이션 | 암모니아/염소 화학 물질 반도체 프로세싱을 위한 장치들 및 시스템들 |
KR102615604B1 (ko) * | 2021-10-26 | 2023-12-20 | 세메스 주식회사 | 기판 처리 방법, 그리고 챔버 세정 방법 |
US20230390811A1 (en) * | 2022-06-06 | 2023-12-07 | Applied Materials, Inc. | Throttle valve and foreline cleaning using a microwave source |
WO2024128635A1 (ko) * | 2022-12-14 | 2024-06-20 | (주)엘오티씨이에스 | 반도체 제조설비용 배기가스 전처리 장비 |
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