JP2021520639A - パターニング用途のためのカーボンハードマスク及び関連方法 - Google Patents
パターニング用途のためのカーボンハードマスク及び関連方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 19
- 229910052799 carbon Inorganic materials 0.000 title claims description 19
- 238000000059 patterning Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 10
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 10
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 10
- 238000007865 diluting Methods 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000003085 diluting agent Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 30
- 239000010410 layer Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
Claims (15)
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させること、
前記処理空間を約100mTorr未満の処理圧力に維持すること、
第1の電力を前記処理チャンバの1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持すること、
前記基板支持体を摂氏約350度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含む、方法。 - 堆積した前記アモルファスカーボン層が、約1.8g/cm3を超える密度を有する、請求項1に記載の方法。
- 堆積した前記アモルファスカーボン層が、約50GPaを超えるヤング率を有する、請求項1に記載の方法。
- 堆積した前記アモルファスカーボン層が、約500MPa未満の膜応力を有する、請求項1に記載の方法。
- 堆積した前記アモルファスカーボン層が、約633nmの波長で約0.15未満の吸収係数(光学K)を有する、請求項1に記載の方法。
- 堆積した前記アモルファスカーボン層が、約1.8g/cm3を超える密度、約50GPaを超えるヤング率、約500MPa未満の膜応力、及び約633nmの波長で約0.15未満の吸収係数(光学K)を有する、請求項1に記載の方法。
- 前記炭化水素ガスが、CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8、C5H10、又はそれらの組み合わせのうちの1つを含む、請求項1に記載の方法。
- 前記処理温度が、摂氏約100度未満である、請求項7に記載の方法。
- 前記第1の電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり約0.7Wと約11.3Wの間の交流電力であり、約350kHzと約100MHzの間の周波数を有する、請求項8に記載の方法。
- 第2の電力を前記1以上の電源電極のうちの1つに印加することを更に含み、前記第2の電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり約0.14Wと約11.3Wの間の交流電力であり、約350kHzと約100MHzの間の周波数を有し、前記第1の電力の前記周波数が、前記第2の電力の前記周波数とは異なっている、請求項9に記載の方法。
- 基板を処理する方法であって、
基板を、処理チャンバの処理空間内に配置された基板支持体上に配置すること、
炭化水素ガス及び希釈ガスを含む処理ガスを前記処理空間の中に流入させることであって、前記炭化水素ガスが、CH4、C2H2、C3H8、C4H10、C2H4、C3H6、C4H8、C5H10、又はそれらの組み合わせのうちの1つを含む、処理ガスを前記処理空間の中に流入させること、
前記処理空間を約20mTorr未満の処理圧力に維持すること、
第1の交流電力を前記基板支持体の1以上の電源電極のうちの1つに印加することによって、前記処理ガスの堆積プラズマを点火及び維持することであって、前記第1の交流電力が、前記基板支持体の基板受け入れ表面の平方センチメートル当たり約0.7ワットと約15ワットの間である、前記処理ガスの堆積プラズマを点火及び維持すること、
前記基板支持体を摂氏約100度未満の処理温度に維持すること、
前記基板の表面を前記堆積プラズマに曝露すること、並びに
アモルファスカーボン層を前記基板の前記表面上に堆積させることを含む、方法。 - 前記希釈ガスが、H2を含み、前記処理ガス内の前記H2対前記炭化水素ガスの比が、約0.5:1と約1:10の間である、請求項11に記載の方法。
- 第2の交流電力を前記基板支持体の前記1以上の電源電極のうちの1つに印加することを更に含み、前記第2の交流電力が、前記基板支持体の前記基板受け入れ表面の平方センチメートル当たり約0.14Wと約7.1Wの間であり、前記第1の交流電力と前記第2の交流電力が、それぞれ、約350kHzと約100MHzの間の周波数を有し、前記第1の交流電力の前記周波数が、前記第2の交流電力の前記周波数とは異なっている、請求項11に記載の方法。
- 基板の表面上に配置されたアモルファスカーボン層を備え、前記アモルファスカーボン層が、約1.8g/cm3を超える密度、約50GPaを超えるヤング率、約500MPa未満の膜応力、及び約633nmの波長で約0.15未満の吸収係数(光学K)を有する、カーボンハードマスク。
- 前記アモルファスカーボン層が、貫通するように形成された複数の開口部を有し、前記複数の開口部のそれぞれが、約2:1を超える高さ対幅の比を有する、請求項14に記載のカーボンハードマスク。
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PCT/US2019/026354 WO2019199681A1 (en) | 2018-04-09 | 2019-04-08 | Carbon hard masks for patterning applications and methods related thereto |
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KR (1) | KR20200130490A (ja) |
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CN111954921A (zh) | 2018-04-09 | 2020-11-17 | 应用材料公司 | 用于图案化应用的碳硬掩模及相关的方法 |
WO2019212592A1 (en) * | 2018-05-03 | 2019-11-07 | Applied Materials, Inc. | Pulsed plasma (dc/rf) deposition of high quality c films for patterning |
JP7462626B2 (ja) | 2018-10-26 | 2024-04-05 | アプライド マテリアルズ インコーポレイテッド | パターニング応用のための高密度炭素膜 |
US20220178026A1 (en) * | 2020-12-03 | 2022-06-09 | Applied Materials, Inc. | Carbon cvd deposition methods to mitigate stress induced defects |
US20230022359A1 (en) * | 2021-07-22 | 2023-01-26 | Applied Materials, Inc. | Methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range |
Citations (9)
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WO2019199681A1 (en) | 2019-10-17 |
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US11469097B2 (en) | 2022-10-11 |
US20230021761A1 (en) | 2023-01-26 |
KR20200130490A (ko) | 2020-11-18 |
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CN111954921A (zh) | 2020-11-17 |
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