JP2021520628A - 酸化ハフニウム系強誘電材料のためのキャップ層 - Google Patents
酸化ハフニウム系強誘電材料のためのキャップ層 Download PDFInfo
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- JP2021520628A JP2021520628A JP2020553591A JP2020553591A JP2021520628A JP 2021520628 A JP2021520628 A JP 2021520628A JP 2020553591 A JP2020553591 A JP 2020553591A JP 2020553591 A JP2020553591 A JP 2020553591A JP 2021520628 A JP2021520628 A JP 2021520628A
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- 239000000463 material Substances 0.000 title claims description 27
- 229910000449 hafnium oxide Inorganic materials 0.000 title abstract description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 9
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 230000008439 repair process Effects 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 238000005121 nitriding Methods 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 abstract description 2
- 238000000231 atomic layer deposition Methods 0.000 description 32
- 239000007789 gas Substances 0.000 description 28
- 210000002381 plasma Anatomy 0.000 description 26
- 238000005229 chemical vapour deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 20
- 238000005240 physical vapour deposition Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000012705 liquid precursor Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UUXZFMKOCRKVDG-UHFFFAOYSA-N methane;hydrofluoride Chemical compound C.F UUXZFMKOCRKVDG-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
本願は、2018年4月2日出願の米国仮出願第62/651,466号の利益を主張する。上記出願の全ての開示は、参照として本明細書に援用される。
Claims (26)
- 基板処理システムにおいて強誘電酸化ハフニウム(HfO2)を形成するための方法であって、
基板上にHfO2層を堆積させることと、
前記HfO2層上にキャップ層を堆積させることと、
前記HfO2層および前記キャップ層をアニールして強誘電ハフニウムHfO2を形成することと、
前記HfO2層を除去することなく前記キャップ層を除去するために前記キャップ層を選択的にエッチングすることと、
を含む、方法。 - 請求項1に記載の方法であって、
前記キャップ層は、窒化シリコン(SiN)、二酸化シリコン(SiO2)、および酸化アルミニウム(Al2O3)からなる群より選択された材料を含む、方法。 - 請求項1に記載の方法であって、
前記キャップ層は、チタンおよびタンタルのいずれも含まない、方法。 - 請求項1に記載の方法であって、さらに、
前記キャップ層を堆積させる前に前記HfO2層を窒化することを含む、方法。 - 請求項1に記載の方法であって、さらに、
前記キャップ層を除去すること続いて、前記HfO2層の上に上部電極を堆積させることを含む、方法。 - 請求項5に記載の方法であって、
前記上部電極は、チタン、タンタル、およびタングステンからなる群より選択された材料を含む、方法。 - 請求項1に記載の方法であって、
前記キャップ層を選択的にエッチングすることは、希フッ酸溶液を用いて前記キャップ層をウェットエッチングすることを含む、方法。 - 請求項1に記載の方法であって、
前記キャップ層を選択的にエッチングすることは、フルオロカーボンプラズマおよびハロゲンプラズマの少なくともいずれかによって生成されたプラズマを用いて前記キャップ層をドライプラズマエッチングすることを含む、方法。 - 請求項1に記載の方法であって、
前記HfO2層および前記キャップ層をアニールして強誘電ハフニウムHfO2を形成することは、500℃〜1000℃の温度で急速熱アニール処理を実施することを含む、方法。 - 請求項1に記載の方法であって、さらに、
前記基板上に底部電極を堆積させることを含み、前記HfO2層を堆積させることは、前記底部電極上に前記HfO2層を堆積させることを含む、方法。 - 請求項1に記載の方法であって、さらに、
前記キャップ層を堆積させる前に前記HfO2層のプラズマ処理を実施することを含む、方法。 - 請求項1に記載の方法であって、さらに、
前記キャップ層を選択的にエッチングすることに続いて前記HfO2層を補修することと、
前記HfO2層を補修することに続いて前記HfO2層の上に上部電極を堆積させることと、
を含む、方法。 - 請求項12に記載の方法であって、
前記HfO2層を補修することは、前記HfO2層の上に追加のHfO2材料を堆積させることを含む、方法。 - 処理チャンバにおいて基板上に強誘電酸化ハフニウム(HfO2)を形成するように構成されたシステムであって、
前記処理チャンバにプロセスガスを供給するように構成されたガス配送システムと、
前記処理チャンバ内でプラズマを選択的に生成するように構成された無線周波数(RF)生成システムと、
コントローラであって、前記ガス配送システムおよび前記RF生成システムを制御することによって、
前記基板上にHfO2層を堆積させ、
前記HfO2層上にキャップ層を堆積させ、
前記HfO2層および前記キャップ層をアニールして強誘電ハフニウムHfO2を形成し、
前記HfO2層を除去することなく前記キャップ層を除去するために前記キャップ層を選択的にエッチングするように構成されたコントローラと、
を備える、システム。 - 請求項14に記載のシステムであって、
前記キャップ層は、窒化シリコン(SiN)、二酸化シリコン(SiO2)、および酸化アルミニウム(Al2O3)からなる群より選択された材料を含む、システム。 - 請求項14に記載のシステムであって、
前記キャップ層は、チタンおよびタンタルのいずれも含まない、システム。 - 請求項14に記載のシステムであって、
前記コントローラは、さらに、前記キャップ層を堆積させる前に前記HfO2層を窒化するように構成されている、システム。 - 請求項14に記載のシステムであって、
前記コントローラは、さらに、前記キャップ層を除去することに続いて、前記HfO2層の上に上部電極を堆積させるように構成されている、システム。 - 請求項18に記載のシステムであって、
前記上部電極は、チタン、タンタル、およびタングステンからなる群より選択された材料を含む、システム。 - 請求項14に記載のシステムであって、
前記キャップ層を選択的にエッチングすることは、希フッ酸溶液を用いて前記キャップ層をウェットエッチングすることを含む、システム。 - 請求項14に記載のシステムであって、
前記キャップ層を選択的にエッチングすることは、フルオロカーボンプラズマおよびハロゲンプラズマの少なくともいずれかによって生成されたプラズマを用いて前記キャップ層をドライプラズマエッチングすることを含む、システム。 - 請求項14に記載のシステムであって、
前記HfO2層および前記キャップ層をアニールして強誘電ハフニウムHfO2を形成することは、500℃〜1000℃の温度で急速熱アニール処理を実施することを含む、システム。 - 請求項14に記載のシステムであって、
前記コントローラは、さらに、前記基板上に底部電極を堆積させるように構成され、前記HfO2層を堆積させることは、前記底部電極に前記HfO2層を堆積させることを含む、システム。 - 請求項14に記載のシステムであって、
前記コントローラは、さらに、前記キャップ層を堆積させる前に前記HfO2層のプラズマ処理を実施するように構成されている、システム。 - 請求項14に記載のシステムであって、
前記コントローラは、さらに、
前記キャップ層を選択的にエッチングすることに続いて前記HfO2層を補修し、
前記HfO2層を補修することに続いて前記HfO2層の上に上部電極を堆積させるように構成されている、システム。 - 請求項25に記載のシステムであって、
前記HfO2層を補修することは、前記HfO2層の上に追加のHfO2材料を堆積させることを含む、システム。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004356558A (ja) * | 2003-05-30 | 2004-12-16 | Toshio Goto | コーティング装置およびコーティング方法 |
US20060194423A1 (en) * | 2005-02-25 | 2006-08-31 | Sangwoo Lim | Method of making a nitrided gate dielectric |
JP2007318018A (ja) * | 2006-05-29 | 2007-12-06 | Toshiba Corp | 強誘電体メモリセル及び強誘電体メモリセルの製造方法 |
WO2011101931A1 (ja) * | 2010-02-17 | 2011-08-25 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US20140070289A1 (en) * | 2012-09-10 | 2014-03-13 | Kabushiki Kaisha Toshiba | Ferroelectric memory and manufacturing method thereof |
US20150340372A1 (en) * | 2014-05-20 | 2015-11-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6785120B1 (en) * | 2003-07-03 | 2004-08-31 | Micron Technology, Inc. | Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide |
US7008833B2 (en) * | 2004-01-12 | 2006-03-07 | Sharp Laboratories Of America, Inc. | In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
KR20080010623A (ko) | 2006-07-27 | 2008-01-31 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 및 그 제조방법 |
KR100877100B1 (ko) * | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
US8724369B2 (en) * | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
DE102011076695B4 (de) * | 2011-05-30 | 2013-05-08 | Globalfoundries Inc. | Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist |
US8846443B2 (en) * | 2011-08-05 | 2014-09-30 | Intermolecular, Inc. | Atomic layer deposition of metal oxides for memory applications |
WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
US9231206B2 (en) * | 2013-09-13 | 2016-01-05 | Micron Technology, Inc. | Methods of forming a ferroelectric memory cell |
US9269785B2 (en) * | 2014-01-27 | 2016-02-23 | Globalfoundries Inc. | Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device |
US9647207B2 (en) * | 2015-01-26 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resistive random access memory (RRAM) structure |
US9496169B2 (en) * | 2015-02-12 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming an interconnect structure having an air gap and structure thereof |
US10192751B2 (en) * | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US9793397B1 (en) * | 2016-09-23 | 2017-10-17 | International Business Machines Corporation | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor |
CN111954932A (zh) * | 2018-01-25 | 2020-11-17 | 株式会社半导体能源研究所 | 半导体装置 |
-
2019
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004356558A (ja) * | 2003-05-30 | 2004-12-16 | Toshio Goto | コーティング装置およびコーティング方法 |
US20060194423A1 (en) * | 2005-02-25 | 2006-08-31 | Sangwoo Lim | Method of making a nitrided gate dielectric |
JP2008532282A (ja) * | 2005-02-25 | 2008-08-14 | フリースケール セミコンダクター インコーポレイテッド | 窒化ゲート誘電体を形成する方法 |
JP2007318018A (ja) * | 2006-05-29 | 2007-12-06 | Toshiba Corp | 強誘電体メモリセル及び強誘電体メモリセルの製造方法 |
WO2011101931A1 (ja) * | 2010-02-17 | 2011-08-25 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US20120299113A1 (en) * | 2010-02-17 | 2012-11-29 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20140070289A1 (en) * | 2012-09-10 | 2014-03-13 | Kabushiki Kaisha Toshiba | Ferroelectric memory and manufacturing method thereof |
JP2014053568A (ja) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | 強誘電体メモリ及びその製造方法 |
US20150340372A1 (en) * | 2014-05-20 | 2015-11-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
JP2017518639A (ja) * | 2014-05-20 | 2017-07-06 | マイクロン テクノロジー, インク. | 有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法。 |
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US11923189B2 (en) | 2024-03-05 |
JP7354138B2 (ja) | 2023-10-02 |
US20210020433A1 (en) | 2021-01-21 |
WO2019195025A1 (en) | 2019-10-10 |
KR20200128449A (ko) | 2020-11-12 |
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