JP2021192494A - イメージセンサ - Google Patents
イメージセンサ Download PDFInfo
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- JP2021192494A JP2021192494A JP2020098935A JP2020098935A JP2021192494A JP 2021192494 A JP2021192494 A JP 2021192494A JP 2020098935 A JP2020098935 A JP 2020098935A JP 2020098935 A JP2020098935 A JP 2020098935A JP 2021192494 A JP2021192494 A JP 2021192494A
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- 239000010409 thin film Substances 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 56
- 230000003321 amplification Effects 0.000 description 47
- 238000003199 nucleic acid amplification method Methods 0.000 description 47
- 238000001514 detection method Methods 0.000 description 30
- 238000002161 passivation Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 2
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (6)
- イメージセンサであって、
絶縁基板と、
前記絶縁基板上の複数の画素と、
定電流源と、
を含み、
前記複数の画素の各画素は、
光電変換素子と、
チャネルを挟むように形成された第1ゲート及び第2ゲートを含む、第1薄膜トランジスタと、
第2薄膜トランジスタと、
第3薄膜トランジスタと、を含み、
前記光電変換素子により生成された信号は、前記第1ゲートに与えられ、
前記定電流源は、第1信号線を介して前記第1薄膜トランジスタに定電流を供給し、
前記第1信号線の電位から一定電圧異なる電位が、第2信号線を介して前記第2ゲートに与えられ、
前記第2ゲートの容量は、前記第1ゲートの容量より小さく、
前記第2薄膜トランジスタのゲートにはリセット制御信号が与えられ、
前記第2薄膜トランジスタは、リセット電源線からのリセット電位を、前記光電変換素子に与え、
前記第3薄膜トランジスタのゲートに入力される選択信号により、前記第3薄膜トランジスタの導通状態が制御され、
前記第3薄膜トランジスタは、前記第1信号線と前記第1薄膜トランジスタとの間に配置され、前記定電流源からの電流は導通状態の前記第3薄膜トランジスタを介して前記第1薄膜トランジスタに流れる、
イメージセンサ。 - 請求項1に記載のイメージセンサであって、
前記第1ゲートは、前記第2ゲートより上層に形成されており、
前記光電変換素子は、前記第1薄膜トランジスタより上層に形成されている、
イメージセンサ。 - 請求項2に記載のイメージセンサであって、
前記光電変換素子は、トップ電極とボトム電極とを含み、
前記第1ゲートは前記ボトム電極に含まれる、
イメージセンサ。 - 請求項1に記載のイメージセンサであって、
前記第1薄膜トランジスタは、酸化物半導体トランジスタである、
イメージセンサ。 - 請求項1に記載のイメージセンサであって、
前記定電流源は、前記絶縁基板上に形成されている、
イメージセンサ。 - イメージセンサの制御方法であって、
前記イメージセンサは、
絶縁基板と、
前記絶縁基板上の複数の画素と、
を含み、
前記複数の画素の各画素は、
光電変換素子と、
積層方向においてチャネルを挟むように形成された第1ゲート及び第2ゲートを含む、第1薄膜トランジスタと、
第2薄膜トランジスタと、
第1信号線と前記第1薄膜トランジスタとの間に配置された第3薄膜トランジスタと、を含み、
前記第2ゲートの容量は、前記第1ゲートの容量より小さく、
前記光電変換素子により生成された信号は、前記第1ゲートに与えられ、
前記制御方法は、
前記第3薄膜トランジスタのゲートに選択信号を与えて導通状態を制御し、前記第1信号線を介して前記第1薄膜トランジスタに定電流を供給し、
前記第1信号線の電位から一定電圧異なる電位を、第2信号線を介して前記第2ゲートに与え、
前記第1信号線の電位に対応する電位を出力し、
前記第2薄膜トランジスタのゲートにリセット制御信号を与え、
前記第2薄膜トランジスタを介して、リセット電源線からのリセット電位を、前記光電変換素子に与える、
制御方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020098935A JP7464447B2 (ja) | 2020-06-05 | 2020-06-05 | イメージセンサ |
CN202110613873.XA CN113766158B (zh) | 2020-06-05 | 2021-06-02 | 图像传感器及控制图像传感器的方法 |
US17/339,306 US11715745B2 (en) | 2020-06-05 | 2021-06-04 | Image sensor and method of controlling image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020098935A JP7464447B2 (ja) | 2020-06-05 | 2020-06-05 | イメージセンサ |
Publications (3)
Publication Number | Publication Date |
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JP2021192494A true JP2021192494A (ja) | 2021-12-16 |
JP2021192494A5 JP2021192494A5 (ja) | 2023-06-06 |
JP7464447B2 JP7464447B2 (ja) | 2024-04-09 |
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JP2020098935A Active JP7464447B2 (ja) | 2020-06-05 | 2020-06-05 | イメージセンサ |
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US (1) | US11715745B2 (ja) |
JP (1) | JP7464447B2 (ja) |
CN (1) | CN113766158B (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5257271B2 (ja) * | 2009-06-26 | 2013-08-07 | ソニー株式会社 | 光電変換装置および光電変換装置の駆動方法、並びに放射線撮像装置および放射線撮像装置の駆動方法 |
JPWO2012032749A1 (ja) * | 2010-09-09 | 2014-01-20 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法、表示装置 |
JP5326022B2 (ja) * | 2012-04-18 | 2013-10-30 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
JP6152729B2 (ja) | 2013-03-26 | 2017-06-28 | ソニー株式会社 | 撮像装置および撮像表示システム |
US9881954B2 (en) | 2014-06-11 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
JP6459271B2 (ja) * | 2014-07-23 | 2019-01-30 | Tianma Japan株式会社 | イメージセンサ及びその駆動方法 |
US9548327B2 (en) | 2014-11-10 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device having a selenium containing photoelectric conversion layer |
JP6656507B2 (ja) | 2015-09-18 | 2020-03-04 | Tianma Japan株式会社 | バイオセンサ及び検出装置 |
JP2017135693A (ja) | 2016-01-21 | 2017-08-03 | パナソニックIpマネジメント株式会社 | 撮像装置 |
JP6892577B2 (ja) * | 2017-04-28 | 2021-06-23 | 天馬微電子有限公司 | イメージセンサ及びセンサ装置 |
-
2020
- 2020-06-05 JP JP2020098935A patent/JP7464447B2/ja active Active
-
2021
- 2021-06-02 CN CN202110613873.XA patent/CN113766158B/zh active Active
- 2021-06-04 US US17/339,306 patent/US11715745B2/en active Active
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Publication number | Publication date |
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CN113766158A (zh) | 2021-12-07 |
US11715745B2 (en) | 2023-08-01 |
US20210384238A1 (en) | 2021-12-09 |
CN113766158B (zh) | 2024-07-12 |
JP7464447B2 (ja) | 2024-04-09 |
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