JP2021174859A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2021174859A JP2021174859A JP2020077138A JP2020077138A JP2021174859A JP 2021174859 A JP2021174859 A JP 2021174859A JP 2020077138 A JP2020077138 A JP 2020077138A JP 2020077138 A JP2020077138 A JP 2020077138A JP 2021174859 A JP2021174859 A JP 2021174859A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 241
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims description 28
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- -1 europium-activated silicate Chemical class 0.000 description 5
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
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- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
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- 235000010290 biphenyl Nutrition 0.000 description 1
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- 125000006267 biphenyl group Chemical group 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
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- 239000003795 chemical substances by application Substances 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
Description
[実施形態1]
(第一波長変換部材20)
[実施形態2]
(支持体1)
(発光素子10)
(第一波長変換部材20)
(蛍光体)
(第二波長変換部材26)
(Y,Lu,Gd,Tb)3(Al,Ga,Sc)5O12:Ce
(式中、Aは、K+、Li+、Na+、Rb+、Cs+及びNH4+からなる群から選ばれる少なくとも1種であり、Mは、第4族元素及び第14族元素からなる群から選ばれる少なくとも1種の元素であり、aは0<a<0.2を満たす数を示す。)なお、このKSF蛍光体の詳細は、本願の出願人が先に特許出願した特願2014−122887号を参照できる。
(第一透光性部材30)
(第一透光性部材30)
(接合部材)
(第一光反射部材40)
(第二透光性部材50)
[実施形態2に係る発光装置の製造方法]
[実施形態3]
[実施形態4]
[実施形態4に係る発光装置400の製造方法]
1…支持体;
2…導電部材;
10、910…発光素子;11…発光素子の第一面;12…発光素子の第二面;
12a…発光面の中央領域;12b…発光面の周辺領域
20…第一波長変換部材;
21…第一波長変換部材の第一面;22…第一波長変換部材の第二面;
26、26’…第二波長変換部材;26a…中央部分;26b…周辺部分;
30…第一透光性部材;
40、940…第一光反射部材;
46…第二光反射部材;
50…第二透光性部材;51…レンズ部;52…鍔部
Claims (10)
- 支持体と、
前記支持体の上に配置される発光素子と、
前記発光素子の上に配置され、前記発光素子の外形よりも大きく、蛍光体を含む第一波長変換部材と、
前記第一波長変換部材の下面であって、前記発光素子の側面から前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材と、
前記第一波長変換部材及び前記第一透光性部材の側方に配置された光反射性を有する第一光反射部材と、
前記第一波長変換部材の上に配置され、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄く、前記発光素子が発する光を異なる波長の光に変換する第二波長変換部材と、
を備える発光装置。 - 請求項1に記載の発光装置であって、
前記第二波長変換部材が配置される面積は、平面視において前記第一波長変換部材の面積以下である発光装置。 - 請求項1または2に記載の発光装置であって、
前記発光素子が、平面視において矩形状であり、
前記第二波長変換部材が、平面視において隅部を面取りした矩形状又は円形状である発光装置。 - 請求項1〜3のいずれか一項に記載の発光装置であって、さらに、
前記第一光反射部材の上面に配置された枠状の第二光反射部材を備え、
前記第二波長変換部材が、前記第二光反射部材の内側に配置されてなる発光装置。 - 請求項1〜4のいずれか一項に記載の発光装置であって、
前記第一光反射部材の上面における凸形状により形成された凹部の内側に、前記第二波長変換部材が配置されている発光装置。 - 請求項1〜5のいずれか一項に記載の発光装置であって、さらに、
前記第二波長変換部材及び第一光反射部材の上面を覆う半球状の第二透光性部材を備える発光装置。 - 支持体の上面に、発光面を有する発光素子を配置する工程と、
該発光面よりも大きい、蛍光体を含む第一波長変換部材を前記発光素子の上面に配置すると共に、前記発光素子の側面から前記第一波長変換部材の下面であって前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材を形成する工程と、
前記第一波長変換部材の上面に、蛍光体を含む第二波長変換部材を、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄くなるように形成する工程と、
前記発光素子、前記第一波長変換部材及び前記第一透光性部材の側方を囲むように第一光反射部材を形成する工程と、
を含む発光装置の製造方法。 - 支持体の上面に、発光面を有する発光素子を配置する工程と、
該発光面よりも大きい、蛍光体を有する第一波長変換部材を前記発光素子の上面に配置すると共に、前記発光素子の側面から前記第一波長変換部材の下面であって前記発光素子の外形よりも突出した領域を連続的に覆う第一透光性部材を形成する工程と、
前記発光素子、前記第一波長変換部材及び前記第一透光性部材の側方を囲むように第一光反射部材を形成する工程と、
前記第一光反射部材の上面に、枠状の第二光反射部材を形成する工程と、
前記第一波長変換部材の上面であって前記第二光反射部材の枠内に、蛍光体を含む第二波長変換部材を、前記第一波長変換部材の中心部分上方の厚みよりも、周辺部分上方の厚みが薄くなるように形成する工程と、
を含む発光装置の製造方法。 - 請求項7又は8に記載の発光装置の製造方法であって、
前記第二波長変換部材をポッティングにより形成する工程が、ポッティングにより行われてなる発光装置の製造方法。 - 請求項7〜9のいずれか一項に記載の発光装置の製造方法であって、さらに、
前記第二波長変換部材及び第一光反射部材の上面を半球状の第二透光性部材で覆う工程を含む発光装置の製造方法。
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JP2020077138A JP7460898B2 (ja) | 2020-04-24 | 2020-04-24 | 発光装置 |
US17/233,079 US11710809B2 (en) | 2020-04-24 | 2021-04-16 | Light-emitting device and method of manufacturing the light-emitting device |
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JP2020077138A JP7460898B2 (ja) | 2020-04-24 | 2020-04-24 | 発光装置 |
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JP7460898B2 JP7460898B2 (ja) | 2024-04-03 |
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US20090261708A1 (en) | 2008-04-21 | 2009-10-22 | Motorola, Inc. | Glass-phosphor capping structure for leds |
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JP5772293B2 (ja) | 2011-06-28 | 2015-09-02 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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