JP2021172829A - 原料供給装置及び成膜装置 - Google Patents
原料供給装置及び成膜装置 Download PDFInfo
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- 239000002994 raw material Substances 0.000 title claims abstract description 124
- 230000008021 deposition Effects 0.000 title abstract description 5
- 238000001514 detection method Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008022 sublimation Effects 0.000 claims 1
- 238000000859 sublimation Methods 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 287
- 238000000034 method Methods 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 37
- 238000010926 purge Methods 0.000 description 35
- 230000006641 stabilisation Effects 0.000 description 26
- 238000011105 stabilization Methods 0.000 description 26
- 238000000231 atomic layer deposition Methods 0.000 description 24
- 238000005755 formation reaction Methods 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 23
- 239000012159 carrier gas Substances 0.000 description 15
- 238000006722 reduction reaction Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000010790 dilution Methods 0.000 description 7
- 239000012895 dilution Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 2
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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Abstract
Description
図1を参照し、実施形態の原料供給装置を備える成膜装置について説明する。図1は、実施形態の原料供給装置を備える成膜装置の一例を示す概略図である。実施形態の成膜装置は、原子層堆積(ALD:Atomic Layer Deposition)法による成膜及び化学的気相成長(CVD:Chemical Vapor Deposition)法による成膜が実施可能な装置として構成されている。
図1から図4までを参照し、実施形態の成膜方法として、図1に示される成膜装置を用いてALD法によりウエハW上にタングステン膜を成膜する場合を例に挙げて説明する。図2は、実施形態の成膜方法の一例を示す図である。
61 ガス供給ライン
73 バルブ
80 貯留タンク
80a 圧力センサ
104 原料排気路
105 開度調整機構
120 バルブ開度制御部
Pt 目標値
W ウエハ
Claims (10)
- 処理容器内に原料ガスを供給する原料供給路と、
前記原料供給路に介設されたバルブと、
前記原料供給路内の圧力を検出する圧力センサと、
前記原料供給路に接続され、前記原料供給路内の前記原料ガスを排気する原料排気路と、
前記原料排気路に介設され、開度が調整されることにより前記原料供給路内の圧力を制御する開度調整機構と、
前記圧力センサの検出値に基づいて前記開度調整機構の前記開度を調整する制御部と、
を有する、原料供給装置。 - 前記原料供給路に介設され、前記原料ガスを貯留する貯留タンクを更に有する、
請求項1に記載の原料供給装置。 - 前記制御部は、前記原料排気路を介して前記原料ガスを排気しながら前記圧力センサの検出値が目標値に到達して安定化するように前記開度調整機構の開度を調整するよう構成される、
請求項1又は2に記載の原料供給装置。 - 前記目標値は、前記処理容器内に前記原料ガスを供給して前記処理容器内で処理を実行しているときの前記圧力センサの検出値に基づいて定められる、
請求項3に記載の原料供給装置。 - 前記制御部は、前記処理容器内に基板を収容した状態で、前記開度調整機構の開度を調整するよう構成される、
請求項1乃至4のいずれか一項に記載の原料供給装置。 - 前記開度調整機構は、
空気圧により弁体を開閉するエアオペレートバルブと、
前記エアオペレートバルブに導入される空気圧を調整する電空レギュレータと、
を含み、
前記制御部は、前記電空レギュレータを制御して前記エアオペレートバルブの開度を調整するよう構成される、
請求項1乃至5のいずれか一項に記載の原料供給装置。 - 前記エアオペレートバルブは、ALDバルブである、
請求項6に記載の原料供給装置。 - 前記バルブは、ALDバルブである、
請求項1乃至7のいずれか一項に記載の原料供給装置。 - 前記原料ガスは、固体原料の昇華又は液体原料の蒸発により生成される、
請求項1乃至8のいずれか一項に記載の原料供給装置。 - 処理容器と、
前記処理容器内に原料ガスを供給する原料供給装置と、
を備え、
前記原料供給装置は、
前記処理容器内に前記原料ガスを供給する原料供給路と、
前記原料供給路に介設されたバルブと、
前記原料供給路内の圧力を検出する圧力センサと、
前記原料供給路に接続され、前記原料供給路内の前記原料ガスを排気する原料排気路と、
前記原料排気路に介設され、開度が調整されることにより前記原料供給路内の圧力を制御する開度調整機構と、
前記圧力センサの検出値に基づいて前記開度調整機構の前記開度を調整する制御部と、
を有する、
成膜装置。
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