JP2021099304A5 - Heater tip and joint layer evaluation device - Google Patents

Heater tip and joint layer evaluation device Download PDF

Info

Publication number
JP2021099304A5
JP2021099304A5 JP2020121021A JP2020121021A JP2021099304A5 JP 2021099304 A5 JP2021099304 A5 JP 2021099304A5 JP 2020121021 A JP2020121021 A JP 2020121021A JP 2020121021 A JP2020121021 A JP 2020121021A JP 2021099304 A5 JP2021099304 A5 JP 2021099304A5
Authority
JP
Japan
Prior art keywords
thin film
heater
temperature probe
temperature
base substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020121021A
Other languages
Japanese (ja)
Other versions
JP7306712B2 (en
JP2021099304A (en
Filing date
Publication date
Application filed filed Critical
Publication of JP2021099304A publication Critical patent/JP2021099304A/en
Publication of JP2021099304A5 publication Critical patent/JP2021099304A5/en
Priority to JP2023102195A priority Critical patent/JP7462363B2/en
Application granted granted Critical
Publication of JP7306712B2 publication Critical patent/JP7306712B2/en
Priority to JP2024041863A priority patent/JP2024060084A/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (10)

シリコンカーバイト（ＳｉＣ）からなるベース基板と、 A base board made of silicon carbide (SiC) and
前記ベース基板の第１の面に配置された温度プローブと、 With the temperature probe arranged on the first surface of the base substrate,
前記温度プローブの周囲に配置された薄膜ヒータと、 A thin film heater arranged around the temperature probe and
前記ベース基板の第２の面に配置された第１の薄膜と、 The first thin film arranged on the second surface of the base substrate and
前記第１の薄膜の表面に形成された金めっき膜を具備し、 A gold-plated film formed on the surface of the first thin film is provided.
前記温度プローブおよび前記薄膜ヒータは、ＮｉとＮｉ－Ｐのうち、少なくともいずれかで形成され、 The temperature probe and the thin film heater are formed of at least one of Ni and Ni—P.
前記第１に薄膜は、Ｎｉ、Ｎｉ－Ｐ、Ｎｉ－Ｂのいずれかで形成されていることを特徴とするヒータチップ。 First, the heater chip is characterized in that the thin film is formed of any of Ni, Ni-P, and Ni-B. 絶縁性または半導体性を有するベース基板と、 With a base substrate that has insulation or semiconductor properties,
前記ベース基板の第１の面に配置された温度プローブと、 With the temperature probe arranged on the first surface of the base substrate,
前記温度プローブの周囲に配置された薄膜ヒータを具備し、 A thin film heater arranged around the temperature probe is provided.
前記温度プローブと前記薄膜ヒータとは同一材料で形成され、 The temperature probe and the thin film heater are made of the same material.
前記薄膜ヒータの膜厚は、０．１（μｍ）以上７．５（μｍ）以下であり、 The film thickness of the thin film heater is 0.1 (μm) or more and 7.5 (μm) or less.
前記薄膜ヒータの膜厚のシート抵抗値（Ω／ｓｑ）は、０．２５（Ω／ｓｑ）以上１．００（Ω／ｓｑ）であることを特徴とするヒータチップ。 A heater chip characterized in that the sheet resistance value (Ω / sq) of the film thickness of the thin film heater is 0.25 (Ω / sq) or more and 1.00 (Ω / sq). 前記薄膜ヒータおよび前記温度プローブ上に、０．０５μｍ以上５μｍ以下の厚みからなる、ＳｉＯ SiO having a thickness of 0.05 μm or more and 5 μm or less on the thin film heater and the temperature probe. ２2 膜、ＳｉＮMembrane, SiN ｘx 膜、ＳｉＯＮ膜のうち、少なくとも１種類の膜で形成されていることを特徴とする請求項１または請求項２記載のヒータチップ。The heater chip according to claim 1 or 2, wherein the heater chip is formed of at least one of a film and a SiON film. 前記ベース基板の側面に、樹脂膜または樹脂フィルムが接して配置されていることを特徴とする請求項１または請求項２記載のヒータチップ。 The heater chip according to claim 1 or 2, wherein the resin film or the resin film is arranged in contact with the side surface of the base substrate. 前記薄膜ヒータは、同心状に構成あるいは形成されていることを特徴とする請求項１または請求項２記載のヒータチップ。 The heater chip according to claim 1 or 2, wherein the thin film heater is configured or formed concentrically. 絶縁性または半導体性を有するベース基板と、 With a base substrate that has insulation or semiconductor properties,
前記ベース基板の第１の面に配置された温度プローブと、 With the temperature probe arranged on the first surface of the base substrate,
前記温度プローブの周囲に配置された薄膜ヒータと、 A thin film heater arranged around the temperature probe and
第１の部材と、 The first member and
前記ベース基板と前記第１の部材間に配置された接合層と、 A bonding layer arranged between the base substrate and the first member,
前記温度プローブに第１の電流を供給する第１の電流供給装置と、 A first current supply device that supplies a first current to the temperature probe,
前記薄膜ヒータに第２の電流を供給する第２の電流供給装置と、 A second current supply device that supplies a second current to the thin film heater,
前記温度プローブの端子電圧を測定する電圧測定装置と、 A voltage measuring device that measures the terminal voltage of the temperature probe, and
前記接合層の温度を測定する温度測定装置を具備することを特徴とする接合層評価装置。 A bonding layer evaluation device comprising a temperature measuring device for measuring the temperature of the bonding layer. 温度プローブおよび薄膜ヒータを有する複数のヒータチップと、 With multiple heater tips with temperature probes and thin film heaters,
第１の部材と、 The first member and
前記ヒータチップと前記第１の部材間に配置された接合層と、 A bonding layer arranged between the heater chip and the first member,
前記温度プローブに第１の電流を供給する第１の電流供給装置と、 A first current supply device that supplies a first current to the temperature probe,
前記薄膜ヒータに第２の電流を供給する第２の電流供給装置と、 A second current supply device that supplies a second current to the thin film heater,
前記温度プローブの端子電圧を測定する電圧測定装置と、 A voltage measuring device that measures the terminal voltage of the temperature probe, and
前記接合層の温度を測定する温度測定装置と、 A temperature measuring device for measuring the temperature of the bonded layer and
前記温度測定装置を積載する移動ステージを具備し、 A moving stage for loading the temperature measuring device is provided.
前記温度測定装置が測定した温度により、前記第２の電流を変化させることを特徴とする接合層評価装置。 A bonding layer evaluation device, characterized in that the second current is changed according to the temperature measured by the temperature measuring device. 前記接合層に、樹脂膜または樹脂フィルムが接して配置されていることを特徴とする請求項６または請求項７記載の接合層評価装置。 The bonding layer evaluation device according to claim 6 or 7, wherein the resin film or the resin film is arranged in contact with the bonding layer. 前記第２の電流供給装置は、第２の電流を供給する第１の端子と第２の端子を有し、 The second current supply device has a first terminal and a second terminal for supplying a second current.
前記第１の端子と前記第２の端子間に、複数の前記薄膜ヒータが配置されていることを特徴とする請求項６または請求項７記載の接合層評価装置。 The junction layer evaluation apparatus according to claim 6 or 7, wherein a plurality of the thin film heaters are arranged between the first terminal and the second terminal. 前記第１の部材は、銅プレートであり、 The first member is a copper plate.
前記接合層は、半田であり、 The bonding layer is solder and is
前記接合層は、研磨加工されていることを特徴とする請求項６または請求項７記載の接合層評価装置。 The joint layer evaluation device according to claim 6 or 7, wherein the joint layer is polished.
JP2020121021A 2019-07-26 2020-07-15 Heater chip and bonding layer evaluation device Active JP7306712B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023102195A JP7462363B2 (en) 2019-07-26 2023-06-22 Bonding layer evaluation method and bonding layer evaluation device
JP2024041863A JP2024060084A (en) 2019-07-26 2024-03-18 Bonding layer evaluation method and bonding layer evaluation device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019138089 2019-07-26
JP2019138089 2019-07-26
JP2019160008 2019-09-03
JP2019160008 2019-09-03
JP2019232815 2019-12-24
JP2019232815 2019-12-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023102195A Division JP7462363B2 (en) 2019-07-26 2023-06-22 Bonding layer evaluation method and bonding layer evaluation device

Publications (3)

Publication Number Publication Date
JP2021099304A JP2021099304A (en) 2021-07-01
JP2021099304A5 true JP2021099304A5 (en) 2022-06-13
JP7306712B2 JP7306712B2 (en) 2023-07-11

Family

ID=76541104

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020121021A Active JP7306712B2 (en) 2019-07-26 2020-07-15 Heater chip and bonding layer evaluation device
JP2023102195A Active JP7462363B2 (en) 2019-07-26 2023-06-22 Bonding layer evaluation method and bonding layer evaluation device
JP2024041863A Pending JP2024060084A (en) 2019-07-26 2024-03-18 Bonding layer evaluation method and bonding layer evaluation device

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023102195A Active JP7462363B2 (en) 2019-07-26 2023-06-22 Bonding layer evaluation method and bonding layer evaluation device
JP2024041863A Pending JP2024060084A (en) 2019-07-26 2024-03-18 Bonding layer evaluation method and bonding layer evaluation device

Country Status (1)

Country Link
JP (3) JP7306712B2 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000261137A (en) 1999-03-12 2000-09-22 Nec Corp Connection inspection system of electronic component and its method
JP2012042393A (en) 2010-08-20 2012-03-01 Toshiba Corp Nondestructive deterioration diagnosis method for solder joint part
JP5621664B2 (en) * 2011-03-04 2014-11-12 日立化成株式会社 Semiconductor chip for evaluation, evaluation system, and heat dissipation material evaluation method
JP5609919B2 (en) * 2012-05-17 2014-10-22 Tdk株式会社 Micro heater element
JP2015078903A (en) 2013-10-17 2015-04-23 株式会社デンソー Parameter setting method and simulation device
JP6470985B2 (en) * 2015-01-27 2019-02-13 日本特殊陶業株式会社 Micro heater and sensor
KR20190041678A (en) 2017-10-13 2019-04-23 삼성전자주식회사 Semiconductor chips inspection apparatus
JP6967252B2 (en) * 2017-11-09 2021-11-17 株式会社クオルテック Manufacturing method of electronic parts and electronic parts

Similar Documents

Publication Publication Date Title
JP4896963B2 (en) Wafer-shaped measuring apparatus and manufacturing method thereof
US8031043B2 (en) Arrangement comprising a shunt resistor and method for producing an arrangement comprising a shunt resistor
TWI594359B (en) Electrostatic chuck and method for manufacturing electrostatic chuck
US5488350A (en) Diamond film structures and methods related to same
JP2008527694A5 (en)
CA2081141A1 (en) Pulsed current resistive heating for bonding temperature critical components
CN110494970B (en) Holding device
TW201810549A (en) Ceramic circuit board and method for manufacturing same
JP7030420B2 (en) Holding device
JP7213656B2 (en) holding device
JPH0868699A (en) Thermister sensor
JP2021099304A5 (en) Heater tip and joint layer evaluation device
JP2017135332A (en) Electrostatic chuck device
KR20090004279A (en) Micro heater having reflection thin film
WO1999048147A1 (en) Process for manufacturing semiconductor device
TW504431B (en) Vacuum chuck with integrated electrical testing points
JP2018181993A (en) Holding apparatus
CN110376240B (en) Longitudinal heat flow method micron line heat conductivity coefficient testing device
JP2022007895A5 (en) Migration evaluation device
JP2019149434A (en) Holding device
JPH10209257A (en) Electrostatic chuck device and its manufacture
JP6616363B2 (en) Holding device
JPH11354302A (en) Thin-film resistor element
JP2021150546A5 (en) Heater Chip and Bonding Layer Evaluation Method and Bonding Layer Evaluation Apparatus
TW202043136A (en) Mems sensor and method for operating a mems sensor