JP2021072364A - 磁気センサ - Google Patents
磁気センサ Download PDFInfo
- Publication number
- JP2021072364A JP2021072364A JP2019198090A JP2019198090A JP2021072364A JP 2021072364 A JP2021072364 A JP 2021072364A JP 2019198090 A JP2019198090 A JP 2019198090A JP 2019198090 A JP2019198090 A JP 2019198090A JP 2021072364 A JP2021072364 A JP 2021072364A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic sensor
- free layer
- eff
- magnetization direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 97
- 230000005415 magnetization Effects 0.000 claims abstract description 46
- 239000000956 alloy Substances 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 229910019236 CoFeB Inorganic materials 0.000 claims description 21
- 229910005347 FeSi Inorganic materials 0.000 claims description 3
- 229910017028 MnSi Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 45
- 230000008859 change Effects 0.000 description 13
- 230000005294 ferromagnetic effect Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 230000005350 ferromagnetic resonance Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010030 laminating Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910019230 CoFeSiB Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910018516 Al—O Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Landscapes
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
|Hk eff|<3 kOe (5)
|Hk2/Hk eff|<0.25 (6)
であることを特徴とする。
図1乃至図8は、本発明の実施の形態の磁気センサを示している。
図1に示すように、本発明の実施の形態の磁気センサは、トンネル磁気抵抗素子10を有している。トンネル磁気抵抗素子10は、固定層11と自由層12と、固定層11と自由層12との間に配置された絶縁層13とを有している。
本発明の実施の形態の磁気センサは、(5)式により感度を高く、(6)式により非線形性を小さくすることができ、従来のTMR素子を利用したものと比べて、感度および非線形性が優れている。このため、例えば、感度を30m%/Oeより大きく、非線形性を1.0%FSより小さくすることができ、電気自動車のバッテリーの蓄電残量検知に利用することにより、バッテリーの利用効率を高めることができる。
11 固定層
11a 第1の強磁性層
11b 第1の非磁性層
11c 第2の強磁性層
11d 第2の非磁性層
11e 第3の強磁性層
12 自由層
13 絶縁層
14 Si/SiO2基板
15 下地層
16 キャップ層
21 Si/SiO2基板
22 MgO層
23 Co20Fe60B20層
24 Ta層
Claims (5)
- トンネル磁気抵抗素子を利用した磁気センサであって、
前記トンネル磁気抵抗素子は、磁化方向が固定されている固定層と、磁化方向が変化可能な自由層と、前記固定層と前記自由層との間に配置された絶縁層とを有し、前記自由層の実効異方性磁場をHk eff、2次の異方性磁場をHk2とすると、
|Hk eff|<3 kOe
|Hk2/Hk eff|<0.25
であることを
特徴とする磁気センサ。 - 前記固定層は、磁化方向が前記絶縁層との境界面に対して垂直方向に固定されており、
前記自由層は、磁化方向が前記固定層の磁化方向に対して平行な方向と反平行な方向との間で変化可能であることを
特徴とする請求項1記載の磁気センサ。 - 前記自由層は、CoFeB合金、FeB合金、Co2FeSi合金、またはCo2MnSi合金を含むことを特徴とする請求項1または2記載の磁気センサ。
- 前記自由層は、CoxFe80−xB20合金(ここで、0≦x<80)を含むことを特徴とする請求項1または2記載の磁気センサ。
- 前記絶縁層はMgOから成り、層厚が1.5nm乃至2.5nmであり、
前記自由層はCoxFe80−xB20合金(ここで、10≦x≦30)から成り、層厚が1.45nm乃至1.70nmであることを
特徴とする請求項1または2記載の磁気センサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019198090A JP7440030B2 (ja) | 2019-10-31 | 2019-10-31 | 磁気センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019198090A JP7440030B2 (ja) | 2019-10-31 | 2019-10-31 | 磁気センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021072364A true JP2021072364A (ja) | 2021-05-06 |
JP7440030B2 JP7440030B2 (ja) | 2024-02-28 |
Family
ID=75713408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019198090A Active JP7440030B2 (ja) | 2019-10-31 | 2019-10-31 | 磁気センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP7440030B2 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014072392A (ja) * | 2012-09-28 | 2014-04-21 | Sony Corp | 記憶素子、記憶装置、磁気ヘッド |
WO2015033464A1 (ja) * | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018032805A (ja) | 2016-08-26 | 2018-03-01 | ソニー株式会社 | 磁気抵抗素子及び電子デバイス |
-
2019
- 2019-10-31 JP JP2019198090A patent/JP7440030B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014072392A (ja) * | 2012-09-28 | 2014-04-21 | Sony Corp | 記憶素子、記憶装置、磁気ヘッド |
WO2015033464A1 (ja) * | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
Non-Patent Citations (1)
Title |
---|
T. OGASAWARA ET AL.: ""Controlling nonlinearity for magnetic tunnel junction based sensors by second order megnetic anisot", 第43回 日本磁気学会学術講演概要集, JPN7023002060, 25 September 2019 (2019-09-25), pages 71, ISSN: 0005070197 * |
Also Published As
Publication number | Publication date |
---|---|
JP7440030B2 (ja) | 2024-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Harder et al. | Electrical detection of magnetization dynamics via spin rectification effects | |
Grünberg | Layered magnetic structures: History, highlights, applications | |
US9537087B2 (en) | Magnetoresistance sensor with perpendicular anisotropy | |
KR102006671B1 (ko) | 자기 소자, 스커미온 메모리, 스커미온 메모리 탑재 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치 | |
Fujiwara et al. | Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices | |
WO2015033464A1 (ja) | 磁気センサ素子 | |
JP2003121197A (ja) | 回転角度センサ | |
Nakano et al. | Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors | |
Selter et al. | Magnetic anisotropy and low-field magnetic phase diagram of the quasi-two-dimensional ferromagnet Cr 2 Ge 2 Te 6 | |
Huang et al. | Noise suppression and sensitivity manipulation of magnetic tunnel junction sensors with soft magnetic Co70. 5Fe4. 5Si15B10 layer | |
Wisniowski et al. | Magnetic tunnel junctions based on out-of-plane anisotropy free and in-plane pinned layer structures for magnetic field sensors | |
JP2013105825A (ja) | 生体磁気センサー及びその製造方法 | |
Lee et al. | Magnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer | |
Singh et al. | Inverse spin Hall effect and spin pumping in the polycrystalline noncollinear antiferromagnetic Mn 3 Ga | |
JP2018056391A (ja) | 磁気抵抗効果素子 | |
Leitao et al. | Magnetoresistive nanosensors: controlling magnetism at the nanoscale | |
Hibino et al. | Large spin-orbit-torque efficiency generated by spin Hall effect in paramagnetic Co-Ni-B alloys | |
US10600538B2 (en) | Permanent magnet comprising a stack of N patterns | |
Singh et al. | Study of angular dependence of exchange bias and misalignment in uniaxial and unidirectional anisotropy in NiFe (111)/FeMn (111)/CoFeB (amorphous) stack | |
JP7440030B2 (ja) | 磁気センサ | |
JP5869405B2 (ja) | 磁気検出素子及びそれを用いた磁気センサ | |
Chen et al. | Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer | |
Aziz et al. | Nonlinear giant magnetoresistance in dual spin valves | |
Wu et al. | On universal butterfly and antisymmetric magnetoresistances | |
KR20110058750A (ko) | 스핀전달토크현상을 이용한 고주파 마이크로 웨이브 및 고주파 자기장 생성 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20191101 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230530 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230718 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231110 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240206 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7440030 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |