JP2021052066A - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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Abstract
Description
(成膜装置)
第1の実施形態の成膜装置について説明する。図1は、第1の実施形態の成膜装置の構成例を示す断面図である。図2及び図3は、図1の成膜装置の真空容器1内の構成を示す斜視図及び平面図である。なお、図2及び図3においては、天板11の図示を省略している。
第1の実施形態の成膜方法について、前述の成膜装置を用いて実施される場合を例に挙げ説明する。このため、これまでに参照した図面を適宜参照する。
第2の実施形態の成膜装置について説明する。図10は、第2の実施形態の成膜装置の構成例を示す断面図である。
第1の実施形態の成膜装置を用いて成膜処理を実施したときのガス種と膜厚分布との関係について評価した実施例について説明する。実施例においては、原料ガス供給部32からの原料ガスとして、ZyALD(登録商標)、トリメチルアルミニウム(TMA)、トリスジメチルアミノシラン(3DMAS)のいずれかを用いて、ウエハWの上にシリコン酸化膜を成膜した。また、補助ガス供給部からは、ガスの供給を行わなかった。実施例におけるプロセス条件は以下である。
ウエハWの温度:300℃
真空容器1内の圧力:266Pa
回転テーブル2の回転速度:3rpm
原料ガス供給部32からの原料ガス:ZyALD(登録商標)、TMA、3DMAS
処理ガスノズル60からの酸化ガス:O3/O2
本実施形態の成膜装置及び成膜方法を実施したシミュレーション実験の結果について説明する。なお、理解の容易のため、前述の実施形態で説明した構成要素に対応する構成要素には同一の参照符号を付し、その説明を省略する。
真空容器1内の圧力:266Pa
第1の排気口610の排気圧力:266Pa
第2の排気口620の排気圧力:266Pa
ガス排気部36の排気流量:1.176×10−5kg/s(原料エリアTotal流量の60%)
ウエハWの温度:300℃
回転テーブル2の回転速度:3rpm
原料ガス供給部32からの原料ガス:ZyALD(登録商標)(Ar:450sccm+ZyALD:29sccm)
補助ガス供給部S1〜S5からは補助ガス:なし
処理ガスノズル60からの酸化ガス:O2(10slm)/O3(300g/Nm3)
分離ガスノズル41、42からの分離ガス:N2ガス(5000sccm)
分離ガス供給管51からの分離ガス:N2ガス(5000sccm)
パージガス供給管72からのパージガス:N2ガス(5000sccm)
真空容器1内の圧力:266Pa
第1の排気口610の排気圧力:266Pa
第2の排気口620の排気圧力:266Pa
ガス排気部36の排気流量:1.214×10−7kg/s(原料エリアTotal流量の60%)
ウエハWの温度:300℃
回転テーブル2の回転速度:3rpm
原料ガス供給部32からの原料ガス:ZyALD(登録商標)(Ar:450sccm+ZyALD:29sccm
補助ガス供給部S1からの補助ガス:N2ガス(30sccm)
補助ガス供給部S2〜S5からは補助ガス:なし
処理ガスノズル60からの酸化ガス:O2(10slm)/O3(300g/Nm3)
分離ガスノズル41、42からの分離ガス:N2ガス(5000sccm)
分離ガス供給管51からの分離ガス:N2ガス(5000sccm)
パージガス供給管72からのパージガス:N2ガス(5000sccm)
2 回転テーブル
30 シャワーヘッド
32 原料ガス供給部
33 軸側補助ガス供給部
34 中間補助ガス供給部
35 外周側補助ガス供給部
36 ガス排気部
W ウエハ
Claims (14)
- 処理室と、
前記処理室内に設けられ、基板を上面に周方向に沿って載置可能な基板載置領域を有する回転テーブルと、
前記回転テーブルの上方に設けられ、前記回転テーブルの半径方向に延在する原料ガス供給部と、
前記原料ガス供給部に対して前記回転テーブルの回転方向の下流側における前記回転テーブルの上方に設けられ、前記回転テーブルの前記半径方向に沿って所定間隔を有して設けられた複数の補助ガス供給部と、
前記補助ガス供給部に対して前記回転テーブルの回転方向の下流側における前記回転テーブルの上方に設けられ、前記回転テーブルの前記半径方向に延在するガス排気部と、
を備える、
成膜装置。 - 前記原料ガス供給部、前記複数の補助ガス供給部及び前記ガス排気部は、シャワーヘッドとして構成されている、
請求項1に記載の成膜装置。 - 前記シャワーヘッドは、前記回転テーブルの前記周方向の一部を扇形に覆う形状を有する、
請求項2に記載の成膜装置。 - 前記ガス排気部は、前記シャワーヘッドの底面に前記回転テーブルの前記半径方向に沿って設けられた一又は複数のガス排気孔を有する、
請求項2又は3に記載の成膜装置。 - 前記一又は複数のガス排気孔は、前記シャワーヘッドの前記底面内で、前記回転テーブルの回転方向の下流側の位置に設けられている、
請求項4に記載の成膜装置。 - 前記回転テーブルの周縁よりも外側の位置に設けられた排気口を更に備える、
請求項2乃至5のいずれか一項に記載の成膜装置。 - 前記ガス排気部及び前記排気口は、各々独立して排気圧力が制御可能である、
請求項6に記載の成膜装置。 - 前記ガス排気部及び前記排気口は、共通で排気圧力が制御可能である、
請求項6に記載の成膜装置。 - 前記原料ガス供給部及び前記補助ガス供給部は、前記シャワーヘッドの底面に前記回転テーブルの前記半径方向に沿って直線状に配列された複数のガス吐出孔を各々有する、
請求項2乃至8のいずれか一項に記載の成膜装置。 - 前記複数のガス吐出孔は、前記シャワーヘッドの前記底面内で、前記回転テーブルの回転方向の上流側の位置に設けられている、
請求項9に記載の成膜装置。 - 前記原料ガス供給部及び前記複数の補助ガス供給部は、各々独立して流量及び組成が制御可能である、
請求項1乃至10のいずれか一項に記載の成膜装置。 - 前記原料ガス供給部は、少なくとも原料ガスの供給源に接続され、
前記補助ガス供給部は、少なくとも不活性ガスの供給源に接続されている、
請求項1乃至11のいずれか一項に記載の成膜装置。 - 前記原料ガス供給部から供給される原料ガスは、シリコン含有ガスであり、
前記補助ガス供給部から供給される補助ガスは、膜厚調整のためのガスである、
請求項1乃至12のいずれか一項に記載の成膜装置。 - 処理室内に設けられた回転テーブルの上に載置された基板に、前記回転テーブルの周方向の一部に設けられた原料ガス供給領域において、前記回転テーブルの上方に設けられ、前記回転テーブルの半径方向に延在する原料ガス供給部から、前記回転テーブルを回転させながら原料ガスを供給する工程と、
前記原料ガス供給領域において、前記原料ガス供給部に対して前記回転テーブルの回転方向の下流側における前記回転テーブルの上方に設けられ、前記回転テーブルの前記半径方向に沿って所定間隔を有して設けられた複数の補助ガス供給部の少なくとも1つから、前記回転テーブルを回転させながら補助ガスを供給する工程と、
前記原料ガス供給領域において、前記補助ガス供給部に対して前記回転テーブルの回転方向の下流側における前記回転テーブルの上方に設けられ、前記回転テーブルの前記半径方向に延在するガス排気部により、前記回転テーブルを回転させながらガスを排気する工程と、
を有する、
成膜方法。
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US17/016,590 US20210087684A1 (en) | 2019-09-24 | 2020-09-10 | Deposition apparatus and deposition method |
KR1020200117364A KR20210035741A (ko) | 2019-09-24 | 2020-09-14 | 성막 장치 및 성막 방법 |
CN202010982683.0A CN112626498A (zh) | 2019-09-24 | 2020-09-17 | 成膜装置和成膜方法 |
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JP7253972B2 (ja) * | 2019-05-10 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理装置 |
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JP2012529564A (ja) * | 2009-06-08 | 2012-11-22 | サイノス・テクノロジー・インコーポレイテツド | 蒸着反応器及び薄膜形成方法 |
JP2013042008A (ja) * | 2011-08-17 | 2013-02-28 | Tokyo Electron Ltd | 成膜装置 |
JP2018078233A (ja) * | 2016-11-11 | 2018-05-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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US6569250B2 (en) * | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
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JP5812606B2 (ja) * | 2010-02-26 | 2015-11-17 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
KR101590823B1 (ko) * | 2013-02-27 | 2016-02-02 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 및 가스 급배 방법 |
JP6569520B2 (ja) * | 2015-12-24 | 2019-09-04 | 東京エレクトロン株式会社 | 成膜装置 |
JP6971887B2 (ja) * | 2018-03-02 | 2021-11-24 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
US11718913B2 (en) * | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
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JP2013042008A (ja) * | 2011-08-17 | 2013-02-28 | Tokyo Electron Ltd | 成膜装置 |
JP2018078233A (ja) * | 2016-11-11 | 2018-05-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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