JP2020510284A - トップエミッション有機発光デバイス及びその構成要素 - Google Patents
トップエミッション有機発光デバイス及びその構成要素 Download PDFInfo
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- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 8
- 239000011147 inorganic material Substances 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 150000004706 metal oxides Chemical class 0.000 claims description 24
- 229920000642 polymer Polymers 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011787 zinc oxide Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 9
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000004793 Polystyrene Substances 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 5
- 239000010406 cathode material Substances 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
2 発光層
3 カソード
4 光抽出層
5 封止層
500 トップエミッションOLEDデバイス
501 第1の有機サブ層
502 第1の無機層
503 第2の有機サブ層
504 第3の有機サブ層
505 第2の無機サブ層
506 第3の無機サブ層
592 基板
Claims (20)
- アノードと、
前記アノードの上に配置された発光層と、
前記発光層の上に配置されたカソードと、
前記カソードの上に配置され、材料が無機材料を含む光抽出層と、
前記光抽出層の上に配置された封止層と、を含む、
トップエミッション有機発光デバイスの構成要素。 - 前記無機材料は金属酸化物を含む請求項1に記載のトップエミッション有機発光デバイスの構成要素。
- 前記金属酸化物は、酸化アルミニウム、酸化亜鉛、酸化ジルコニウム、または酸化チタンの少なくとも1つを含む請求項2に記載のトップエミッション有機発光デバイスの構成要素。
- 前記封止層は、積層構成要素を有し、前記光抽出層の上に配置された有機サブ層および前記有機サブ層の上に配置された無機サブ層を含む請求項1に記載のトップエミッション有機発光デバイスの構成要素。
- 前記有機サブ層の材料は、エポキシ樹脂を含む請求項4に記載のトップエミッション有機発光デバイスの構成要素。
- 前記無機サブ層の材料は、酸化ケイ素、窒化ケイ素、または酸窒化ケイ素の少なくとも1つを含む請求項4に記載のトップエミッション有機発光デバイスの構成要素。
- 前記有機サブ層は、第1の有機サブ層であり、
前記封止層は、前記無機サブ層の上に配置された第2の有機サブ層をさらに含み、
前記第2の有機サブ層の材料は、波形ポリマーを含む、
請求項4に記載のトップエミッション有機発光デバイスの構成要素。 - 前記波形ポリマーは、ポリスチレン、ポリメチルメタクリレート、またはフェノール樹脂の少なくとも1つを含む請求項7に記載のトップエミッション有機発光デバイスの構成要素。
- 前記第1の有機サブ層の厚さは、約1μmから約8μmの範囲であり、
前記第1の有機サブ層の屈折率は、約1.56である、
請求項7に記載のトップエミッション有機発光デバイスの構成要素。 - 前記無機サブ層の厚さは、約800nmであり、
前記無機サブ層の屈折率は、約1.84である、
請求項7に記載のトップエミッション有機発光デバイスの構成要素。 - 前記第2の有機サブ層の厚さは、約1μmから約8μmの範囲である請求項7に記載のトップエミッション有機発光デバイスの構成要素。
- 前記光抽出層の屈折率は、約1.7から約2.1の範囲であり、
前記光抽出層の厚さは、約50nmである、
請求項1に記載のトップエミッション有機発光デバイスの構成要素。 - 前記封止層は、有機サブ層を含み、
前記有機サブ層の材料は、波形ポリマーを含む、
請求項1に記載のトップエミッション有機発光デバイスの構成要素。 - 前記光抽出層は、原子層堆積によって堆積される請求項13に記載のトップエミッション有機発光デバイスの構成要素。
- 前記封止層は、前記光抽出層と前記有機サブ層との間に無機サブ層をさらに含み、
前記無機サブ層の材料は、酸化ケイ素、窒化ケイ素、または酸窒化ケイ素の少なくとも1つを含む、
請求項13に記載のトップエミッション有機発光デバイスの構成要素。 - 前記封止層は、前記有機サブ層の上に配置された追加無機サブ層をさらに含み、
前記有機サブ層の上に配置された前記追加無機サブ層の材料は、酸化ケイ素、窒化ケイ素、または酸窒化ケイ素の少なくとも1つを含む、
請求項13から15のいずれか一項に記載のトップエミッション有機発光デバイスの構成要素。 - 前記有機サブ層の厚さは、約1μmから約8μmの範囲である請求項13に記載のトップエミッション有機発光デバイスの構成要素。
- 請求項1〜15及び17のいずれか一項に記載の構成要素を含むトップエミッション有機発光ダイオード。
- 基板の上にアノードを形成することと、
前記アノードの上に発光層を形成することと、
前記発光層の上にカソードを形成することと、
前記カソードの上に材料が無機材料を含む光抽出層を形成することと、
前記光抽出層の上に封止層を形成することと、を含む、
トップエミッション有機発光デバイスの構成要素を製造する方法。 - 原子層堆積によって前記光抽出層を前記カソードの上に堆積する請求項19に記載のトップエミッション有機発光デバイスの構成要素を製造する方法。
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CN201710184216.1A CN108630822B (zh) | 2017-03-24 | 2017-03-24 | 一种顶发射oled器件的组件和顶发射oled器件 |
CN201710184216.1 | 2017-03-24 | ||
PCT/CN2017/105493 WO2018171166A1 (en) | 2017-03-24 | 2017-10-10 | Top-emitting organic light-emitting device and component thereof |
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JP2020510284A true JP2020510284A (ja) | 2020-04-02 |
JP2020510284A5 JP2020510284A5 (ja) | 2020-05-14 |
JP7142640B2 JP7142640B2 (ja) | 2022-09-27 |
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US (1) | US10446794B2 (ja) |
EP (1) | EP3602647A4 (ja) |
JP (1) | JP7142640B2 (ja) |
CN (1) | CN108630822B (ja) |
WO (1) | WO2018171166A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10535840B2 (en) | 2018-01-26 | 2020-01-14 | Apple Inc. | Organic light-emitting diode displays |
US10446780B1 (en) * | 2018-04-19 | 2019-10-15 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode package structure and its method of manufacturing, display device |
CN110311051A (zh) * | 2019-06-19 | 2019-10-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法、显示装置 |
KR20210032599A (ko) * | 2019-09-16 | 2021-03-25 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112038501B (zh) * | 2020-09-08 | 2021-08-10 | 长春海谱润斯科技股份有限公司 | 一种顶发射有机电致发光器件 |
CN113809265B (zh) * | 2021-08-30 | 2024-02-06 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN113809267B (zh) * | 2021-09-16 | 2022-08-05 | 北京载诚科技有限公司 | 一种显示面板和车载显示装置 |
CN115548235B (zh) * | 2022-10-13 | 2024-05-28 | 京东方科技集团股份有限公司 | 光取出膜、发光器组件和显示装置 |
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EP3602647A1 (en) | 2020-02-05 |
US20190058163A1 (en) | 2019-02-21 |
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US10446794B2 (en) | 2019-10-15 |
WO2018171166A1 (en) | 2018-09-27 |
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JP7142640B2 (ja) | 2022-09-27 |
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