JP2020509948A - 漏斗状ノズルの寸法ばらつきの低減 - Google Patents
漏斗状ノズルの寸法ばらつきの低減 Download PDFInfo
- Publication number
- JP2020509948A JP2020509948A JP2019545754A JP2019545754A JP2020509948A JP 2020509948 A JP2020509948 A JP 2020509948A JP 2019545754 A JP2019545754 A JP 2019545754A JP 2019545754 A JP2019545754 A JP 2019545754A JP 2020509948 A JP2020509948 A JP 2020509948A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- opening
- layer
- funnel
- photoresist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 47
- 230000008569 process Effects 0.000 claims description 42
- 238000001312 dry etching Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000009623 Bosch process Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 131
- 239000007788 liquid Substances 0.000 description 42
- 238000005086 pumping Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 239000012528 membrane Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001053 micromoulding Methods 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1625—Manufacturing processes electroforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14475—Structure thereof only for on-demand ink jet heads characterised by nozzle shapes or number of orifices per chamber
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims (19)
- ノズルを形成する方法であって、該方法は、
基板の上層に、第1の幅を有する第1の開口を形成する工程、
前記基板の上面に、前記第1の幅よりも大きい第2の幅を有する第2の開口を有するフォトレジストパターン層を形成する工程、
前記基板の前記上面で終端する湾曲側面を形成するため、前記フォトレジストパターン層をリフローする工程、
前記第1の幅と下面と前記基板の前記上面に対して実質的に垂直な側面とを有する直立壁凹所を形成するため、前記基板の前記上層の前記第1の開口を通して、前記基板の第2の層をエッチングする工程、および
前記直立壁凹所が形成された後、前記フォトレジストパターン層の前記湾曲側面、前記基板の前記上層および前記基板の前記第2の層をドライエッチングする工程
を含み、ここで、該ドライエッチングにより、i)前記直立壁凹所を、該凹所の直立壁下部に徐々にかつ滑らかに接合する湾曲側壁または前記下面で終端する湾曲側壁を有する漏斗状凹所へ変形させ、ii)前記直立壁凹所の一部を、前記第1の幅より大きい第3の幅へ拡大し、さらに、iii)前記上層内の前記第1の開口を、前記第3の幅より大きい第4の幅へ拡大する、方法。 - 前記第2の開口は、前記第1の開口より約1μm大きい、請求項1記載の方法。
- ステッパを使用して、前記フォトレジストパターン層を、前記第1の開口を有する前記基板の前記上面に正確にアライメントする、請求項2記載の方法。
- 前記第1の開口を、薄膜ノンリフローレジストでのエッチングにより形成する、請求項1記載の方法。
- 前記基板は、半導体基板であり、前記第1の層は、ボッシュエッチングプロセスに対して高選択性を有する酸化物層である、請求項4記載の方法。
- 前記第4の幅の一部は、前記第1の幅より40μm大きい、請求項1記載の方法。
- 前記フォトレジストパターン層をリフローする工程は、
前記第2の開口の上縁が表面張力の作用のもとで丸みを帯びるようになるまで、前記フォトレジストパターン層を加熱によって軟化させる工程、および
加熱による軟化の後、前記第2の開口の前記上縁に丸みを帯びさせたまま、前記フォトレジストパターン層を再硬化させる工程
を含む、請求項1記載の方法。 - 前記基板の前記上面に堆積された前記フォトレジストパターン層は、少なくとも10μmの厚さを有する、請求項7記載の方法。
- 前記フォトレジストパターン層を加熱によって軟化させる工程は、さらに、
前記フォトレジストパターン層のフォトレジスト材料が表面張力の作用のもとでリフローするまで、真空環境において、内部に形成された前記第2の開口を有する前記フォトレジストパターン層を加熱する工程
を含む、請求項7記載の方法。 - 前記フォトレジストパターン層を加熱する工程は、
前記フォトレジストパターン層を160℃から250℃までの温度へ加熱する工程
を含む、請求項7記載の方法。 - 前記フォトレジストパターン層を再硬化させる工程は、
前記第2の開口の前記上縁に丸みを帯びさせたまま、前記フォトレジストパターン層を冷却する工程
を含む、請求項7記載の方法。 - 前記湾曲上部の上部開口は、前記湾曲上部の下部開口の少なくとも4倍の幅を有する、請求項1記載の方法。
- 前記直立壁凹所を形成するため、前記基板の前記上面をエッチングする工程は、
ボッシュプロセスを用いて、前記フォトレジストパターン層の前記開口を通して、前記半導体基板の前記上面をエッチングする工程
を含む、請求項1記載の方法。 - 前記漏斗状凹所を形成するための前記ドライエッチングは、前記フォトレジストパターン層と前記半導体基板とに対して実質的に等しいエッチングレートを有する、請求項1記載の方法。
- 前記漏斗状凹所を形成するための前記ドライエッチングは、CF4/CHF3ガス混合物を使用したドライエッチングを含む、請求項1記載の方法。
- 前記フォトレジストパターン層の前記第1の開口は、前記フォトレジストパターン層の露出した上面に対して平行な平面において、円形の断面形状を有する、請求項1記載の方法。
- 前記漏斗状凹所は、前記基板の前記上面に対して平行な平面において、円形の断面形状を有する、請求項1記載の方法。
- 請求項1記載の方法を使用して複数のノズルを形成する方法であって、
前記複数のノズルは、0.15μm未満のノズル幅の標準偏差を有する、方法。 - 前記凹所は、前記上層を貫通して延在している、請求項1記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021210868A JP7242826B2 (ja) | 2017-02-23 | 2021-12-24 | 漏斗状ノズルの寸法ばらつきの低減 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/440,435 | 2017-02-23 | ||
US15/440,435 US10052875B1 (en) | 2017-02-23 | 2017-02-23 | Reducing size variations in funnel nozzles |
PCT/US2018/019208 WO2018156753A1 (en) | 2017-02-23 | 2018-02-22 | Reducing size variations in funnel nozzles |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021210868A Division JP7242826B2 (ja) | 2017-02-23 | 2021-12-24 | 漏斗状ノズルの寸法ばらつきの低減 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020509948A true JP2020509948A (ja) | 2020-04-02 |
JP2020509948A5 JP2020509948A5 (ja) | 2021-04-08 |
JP7001698B2 JP7001698B2 (ja) | 2022-01-20 |
Family
ID=63144583
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019545754A Active JP7001698B2 (ja) | 2017-02-23 | 2018-02-22 | 漏斗状ノズルの寸法ばらつきの低減 |
JP2021210868A Active JP7242826B2 (ja) | 2017-02-23 | 2021-12-24 | 漏斗状ノズルの寸法ばらつきの低減 |
JP2023035642A Active JP7475513B2 (ja) | 2017-02-23 | 2023-03-08 | 漏斗状ノズルの寸法ばらつきの低減 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021210868A Active JP7242826B2 (ja) | 2017-02-23 | 2021-12-24 | 漏斗状ノズルの寸法ばらつきの低減 |
JP2023035642A Active JP7475513B2 (ja) | 2017-02-23 | 2023-03-08 | 漏斗状ノズルの寸法ばらつきの低減 |
Country Status (5)
Country | Link |
---|---|
US (5) | US10052875B1 (ja) |
EP (2) | EP3585618B1 (ja) |
JP (3) | JP7001698B2 (ja) |
CN (2) | CN110461610B (ja) |
WO (1) | WO2018156753A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021205643A1 (ja) * | 2020-04-10 | 2021-10-14 | コニカミノルタ株式会社 | ノズル基板の製造方法 |
JP2022043224A (ja) * | 2017-02-23 | 2022-03-15 | フジフィルム ディマティックス, インコーポレイテッド | 漏斗状ノズルの寸法ばらつきの低減 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050084807A1 (en) * | 2003-10-17 | 2005-04-21 | Meagley Robert P. | Reducing photoresist line edge roughness using chemically-assisted reflow |
US20070072389A1 (en) * | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Method for fabricating semiconductor device having taper type trench |
US20070293044A1 (en) * | 2006-06-16 | 2007-12-20 | Applied Materials, Inc. | Patterning 3d features in a substrate |
JP2008524031A (ja) * | 2004-12-17 | 2008-07-10 | フジフィルム ディマティックス,インコーポレイテッド | 印字ヘッドモジュール |
JP2008273036A (ja) * | 2007-04-27 | 2008-11-13 | Seiko Epson Corp | ノズル基板の製造方法、液滴吐出ヘッドの製造方法及び液滴吐出装置の製造方法 |
JP2009006501A (ja) * | 2007-06-26 | 2009-01-15 | Seiko Epson Corp | ノズル基板の製造方法、液滴吐出ヘッドの製造方法及び基板剥離装置 |
US20120115074A1 (en) * | 2010-11-05 | 2012-05-10 | Zishu Zhang | Methods Of Forming Patterned Masks |
US20130068724A1 (en) * | 2010-06-02 | 2013-03-21 | Oce-Technologies B.V. | Method for manufacturing a nozzle and an associated funnel in a single plate |
JP2013230676A (ja) * | 2012-04-30 | 2013-11-14 | Fujifilm Corp | 漏斗状ノズルの作製方法及び液滴吐出装置 |
JP2014113822A (ja) * | 2012-12-06 | 2014-06-26 | Samsung Electronics Co Ltd | インクジェット・プリンティング装置及びノズル形成方法 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4106975A (en) * | 1977-06-30 | 1978-08-15 | International Business Machines Corporation | Process for etching holes |
JPS6376330A (ja) | 1986-09-18 | 1988-04-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US5258332A (en) | 1987-08-28 | 1993-11-02 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices including rounding of corner portions by etching |
DE69031543T2 (de) * | 1989-02-17 | 1998-04-09 | Matsushita Electronics Corp | Verfahren zum Herstellen einer Halbleitervorrichtung |
US5166088A (en) * | 1990-07-03 | 1992-11-24 | Sharp Kabushiki Kaisha | Method of manufacturing semiconductor device contact vias in layers comprising silicon nitride and glass |
US5439782A (en) * | 1993-12-13 | 1995-08-08 | At&T Corp. | Methods for making microstructures |
JP3474389B2 (ja) | 1997-02-18 | 2003-12-08 | 富士通株式会社 | ノズル板の製造装置 |
US6379981B2 (en) * | 1998-03-27 | 2002-04-30 | Micron Technology, Inc. | Methods incorporating detectable atoms into etching processes |
EP1065059B1 (en) * | 1999-07-02 | 2007-01-31 | Canon Kabushiki Kaisha | Method for producing liquid discharge head, liquid discharge head, head cartridge, liquid discharging recording apparatus, method for producing silicon plate and silicon plate |
US6474795B1 (en) * | 1999-12-21 | 2002-11-05 | Eastman Kodak Company | Continuous ink jet printer with micro-valve deflection mechanism and method of controlling same |
KR100416795B1 (ko) * | 2001-04-27 | 2004-01-31 | 삼성전자주식회사 | 소자분리막 형성방법 및 이를 이용한 반도체 장치의제조방법 |
KR100396559B1 (ko) * | 2001-11-05 | 2003-09-02 | 삼성전자주식회사 | 일체형 잉크젯 프린트헤드의 제조 방법 |
KR100825315B1 (ko) * | 2001-12-29 | 2008-04-28 | 엘지디스플레이 주식회사 | 잉크인쇄용 클리체 및 그 제조방법 |
WO2005046026A1 (en) * | 2003-11-05 | 2005-05-19 | G & W Technologies, Inc. | Fluid dynamic bearing motor |
US7347532B2 (en) * | 2004-08-05 | 2008-03-25 | Fujifilm Dimatix, Inc. | Print head nozzle formation |
US7195343B2 (en) * | 2004-08-27 | 2007-03-27 | Lexmark International, Inc. | Low ejection energy micro-fluid ejection heads |
US7560039B2 (en) * | 2004-09-10 | 2009-07-14 | Lexmark International, Inc. | Methods of deep reactive ion etching |
CN101428505B (zh) * | 2004-12-17 | 2011-03-30 | 富士胶卷迪马蒂克斯股份有限公司 | 打印头模块和打印头*** |
JP2007175992A (ja) | 2005-12-28 | 2007-07-12 | Seiko Epson Corp | ノズルプレートの製造方法及びノズルプレート、液滴吐出ヘッドの製造方法及び液滴吐出ヘッド、並びに液滴吐出装置の製造方法及び液滴吐出装置 |
KR100761466B1 (ko) * | 2006-06-12 | 2007-09-27 | 삼성전자주식회사 | 반도체장치의 소자분리구조 형성방법 |
JP2010508136A (ja) | 2006-10-25 | 2010-03-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 高速ジェット噴射用装置のノズル |
JP2008149542A (ja) | 2006-12-15 | 2008-07-03 | Fujifilm Corp | インクジェット画像形成方法、形成装置およびインク組成物 |
JP2008238485A (ja) * | 2007-03-26 | 2008-10-09 | Fujifilm Corp | インクジェット記録方法及びインクジェット記録装置 |
US7703069B1 (en) * | 2007-08-14 | 2010-04-20 | Brion Technologies, Inc. | Three-dimensional mask model for photolithography simulation |
KR100897558B1 (ko) | 2007-09-18 | 2009-05-15 | 삼성전기주식회사 | 잉크젯 헤드 및 그 제조방법 |
US20100053270A1 (en) | 2008-08-28 | 2010-03-04 | Jinquan Xu | Printhead having converging diverging nozzle shape |
JP2012507417A (ja) | 2008-10-31 | 2012-03-29 | フジフィルム ディマティックス, インコーポレイテッド | ノズル噴出口成形 |
KR101518733B1 (ko) * | 2008-11-27 | 2015-05-11 | 삼성전자주식회사 | 노즐 플레이트 및 그 제조방법 |
US8197029B2 (en) * | 2008-12-30 | 2012-06-12 | Fujifilm Corporation | Forming nozzles |
US8563325B1 (en) * | 2009-09-29 | 2013-10-22 | Sandia Corporation | Coaxial microreactor for particle synthesis |
US20110181664A1 (en) | 2010-01-27 | 2011-07-28 | Fujifilm Corporation | Forming Self-Aligned Nozzles |
KR20120002688A (ko) | 2010-07-01 | 2012-01-09 | 삼성전기주식회사 | 노즐 플레이트 및 그 제조 방법, 그리고 상기 노즐 플레이트를 구비하는 잉크젯 프린터 헤드 |
WO2012018561A1 (en) * | 2010-07-26 | 2012-02-09 | Fujifilm Corporation | Forming a device having a curved piezoelectric membrane |
JP5752906B2 (ja) * | 2010-09-14 | 2015-07-22 | エスアイアイ・プリンテック株式会社 | 液体噴射ヘッドの製造方法 |
US8727499B2 (en) * | 2011-12-21 | 2014-05-20 | Hewlett-Packard Development Company, L.P. | Protecting a fluid ejection device resistor |
US20130299950A1 (en) * | 2012-05-11 | 2013-11-14 | Sematech, Inc. | Semiconductor structure with buried through substrate vias |
WO2014126559A1 (en) * | 2013-02-13 | 2014-08-21 | Hewlett-Packard Development Company, L.P. | Fluid ejection device |
EP3005419A4 (en) * | 2013-06-06 | 2017-03-15 | United Silicon Carbide Inc. | Trench shield connected jfet |
CN104085195B (zh) * | 2013-09-27 | 2016-02-03 | 大连理工大学 | 液体喷射头的制造方法、液体喷射头和打印设备 |
US9580623B2 (en) * | 2015-03-20 | 2017-02-28 | Shin-Etsu Chemical Co., Ltd. | Patterning process using a boron phosphorus silicon glass film |
KR101770749B1 (ko) | 2016-01-11 | 2017-08-23 | 최상준 | 반사방지용 하드마스크 조성물 |
US10052875B1 (en) | 2017-02-23 | 2018-08-21 | Fujifilm Dimatix, Inc. | Reducing size variations in funnel nozzles |
-
2017
- 2017-02-23 US US15/440,435 patent/US10052875B1/en active Active
-
2018
- 2018-02-22 CN CN201880020759.2A patent/CN110461610B/zh active Active
- 2018-02-22 JP JP2019545754A patent/JP7001698B2/ja active Active
- 2018-02-22 CN CN202111351926.1A patent/CN114179522B/zh active Active
- 2018-02-22 WO PCT/US2018/019208 patent/WO2018156753A1/en unknown
- 2018-02-22 EP EP18757264.9A patent/EP3585618B1/en active Active
- 2018-02-22 EP EP22182972.4A patent/EP4129693A3/en active Pending
- 2018-07-03 US US16/026,962 patent/US10471718B2/en active Active
-
2019
- 2019-11-08 US US16/677,818 patent/US10850518B2/en active Active
-
2020
- 2020-10-21 US US17/075,840 patent/US11571895B2/en active Active
-
2021
- 2021-12-24 JP JP2021210868A patent/JP7242826B2/ja active Active
-
2023
- 2023-01-04 US US18/092,954 patent/US20230133379A1/en active Pending
- 2023-03-08 JP JP2023035642A patent/JP7475513B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050084807A1 (en) * | 2003-10-17 | 2005-04-21 | Meagley Robert P. | Reducing photoresist line edge roughness using chemically-assisted reflow |
JP2008524031A (ja) * | 2004-12-17 | 2008-07-10 | フジフィルム ディマティックス,インコーポレイテッド | 印字ヘッドモジュール |
US20070072389A1 (en) * | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Method for fabricating semiconductor device having taper type trench |
US20070293044A1 (en) * | 2006-06-16 | 2007-12-20 | Applied Materials, Inc. | Patterning 3d features in a substrate |
JP2008273036A (ja) * | 2007-04-27 | 2008-11-13 | Seiko Epson Corp | ノズル基板の製造方法、液滴吐出ヘッドの製造方法及び液滴吐出装置の製造方法 |
JP2009006501A (ja) * | 2007-06-26 | 2009-01-15 | Seiko Epson Corp | ノズル基板の製造方法、液滴吐出ヘッドの製造方法及び基板剥離装置 |
US20130068724A1 (en) * | 2010-06-02 | 2013-03-21 | Oce-Technologies B.V. | Method for manufacturing a nozzle and an associated funnel in a single plate |
US20120115074A1 (en) * | 2010-11-05 | 2012-05-10 | Zishu Zhang | Methods Of Forming Patterned Masks |
JP2013230676A (ja) * | 2012-04-30 | 2013-11-14 | Fujifilm Corp | 漏斗状ノズルの作製方法及び液滴吐出装置 |
JP2014113822A (ja) * | 2012-12-06 | 2014-06-26 | Samsung Electronics Co Ltd | インクジェット・プリンティング装置及びノズル形成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022043224A (ja) * | 2017-02-23 | 2022-03-15 | フジフィルム ディマティックス, インコーポレイテッド | 漏斗状ノズルの寸法ばらつきの低減 |
JP7242826B2 (ja) | 2017-02-23 | 2023-03-20 | フジフィルム ディマティックス, インコーポレイテッド | 漏斗状ノズルの寸法ばらつきの低減 |
WO2021205643A1 (ja) * | 2020-04-10 | 2021-10-14 | コニカミノルタ株式会社 | ノズル基板の製造方法 |
JP7480839B2 (ja) | 2020-04-10 | 2024-05-10 | コニカミノルタ株式会社 | ノズル基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110461610A (zh) | 2019-11-15 |
US20180326729A1 (en) | 2018-11-15 |
JP2023065675A (ja) | 2023-05-12 |
JP7001698B2 (ja) | 2022-01-20 |
US20230133379A1 (en) | 2023-05-04 |
JP7475513B2 (ja) | 2024-04-26 |
US20200070518A1 (en) | 2020-03-05 |
EP3585618B1 (en) | 2022-07-06 |
EP3585618A1 (en) | 2020-01-01 |
JP7242826B2 (ja) | 2023-03-20 |
US10471718B2 (en) | 2019-11-12 |
CN114179522B (zh) | 2023-10-17 |
EP4129693A2 (en) | 2023-02-08 |
WO2018156753A1 (en) | 2018-08-30 |
EP4129693A3 (en) | 2023-05-24 |
US10052875B1 (en) | 2018-08-21 |
US20210031521A1 (en) | 2021-02-04 |
CN114179522A (zh) | 2022-03-15 |
CN110461610B (zh) | 2021-11-02 |
US10850518B2 (en) | 2020-12-01 |
US20180236771A1 (en) | 2018-08-23 |
US11571895B2 (en) | 2023-02-07 |
EP3585618A4 (en) | 2020-03-04 |
JP2022043224A (ja) | 2022-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2660060B1 (en) | Forming a funnel-shaped nozzle | |
JP7475513B2 (ja) | 漏斗状ノズルの寸法ばらつきの低減 | |
JP4818276B2 (ja) | 液体吐出方法、液体吐出ヘッド、及び液体吐出装置 | |
JP5519263B2 (ja) | ノズル形成方法 | |
JP5784875B2 (ja) | ノズルプレート及びその製造方法 | |
JP5118227B2 (ja) | プリントヘッドのノズル形成 | |
JP2003311968A (ja) | インクジェットプリンタヘッド及びインクジェットプリンタヘッドの製造方法 | |
JP5593659B2 (ja) | 液滴吐出装置 | |
US7575303B2 (en) | Liquid-ejection head and method for producing the same | |
JP6615048B2 (ja) | ノズルエリアに高粘度材料を補充するように構成されるプリントヘッド | |
KR100366651B1 (ko) | 실리콘 프로세스를 이용한 노즐 플레이트의 제조방법 및그 노즐 플레이트를 적용한 잉크젯 프린터 헤드 | |
KR20090028189A (ko) | 잉크 젯 프린터 헤드 및 그 제조방법 | |
WO2010134418A1 (ja) | インクジェットヘッド及びその製造方法 | |
JP2009119773A (ja) | 液体吐出ヘッド用ノズルプレート及び液体吐出ヘッド用ノズルプレート製造方法 | |
JP2008110560A (ja) | 液体吐出ヘッド用ノズルプレート及び液体吐出ヘッド用ノズルプレートの製造方法 | |
JP2008254271A (ja) | 液体吐出ヘッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210222 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210222 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20210222 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20210402 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211224 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7001698 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |