JP2020178096A - Inductor built-in substrate - Google Patents
Inductor built-in substrate Download PDFInfo
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- JP2020178096A JP2020178096A JP2019081007A JP2019081007A JP2020178096A JP 2020178096 A JP2020178096 A JP 2020178096A JP 2019081007 A JP2019081007 A JP 2019081007A JP 2019081007 A JP2019081007 A JP 2019081007A JP 2020178096 A JP2020178096 A JP 2020178096A
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000004020 conductor Substances 0.000 claims abstract description 127
- 229920005989 resin Polymers 0.000 claims abstract description 106
- 239000011347 resin Substances 0.000 claims abstract description 106
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000945 filler Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 description 51
- 238000007772 electroless plating Methods 0.000 description 36
- 239000000463 material Substances 0.000 description 25
- 239000011162 core material Substances 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000005553 drilling Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000006249 magnetic particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
本発明は、インダクタを内蔵するインダクタ内蔵基板に関する。 The present invention relates to an inductor built-in substrate having an inductor built-in.
特許文献１は、配線基板に内蔵されるインダクタ部品の製造方法を開示している。特許文献１では、樹脂層内に磁性体を収容し、樹脂層内にスルーホール導体を設け、スルーホール導体と磁性体とが接触しないようにしている。 Patent Document 1 discloses a method for manufacturing an inductor component incorporated in a wiring board. In Patent Document 1, a magnetic material is housed in the resin layer, and a through-hole conductor is provided in the resin layer to prevent the through-hole conductor and the magnetic material from coming into contact with each other.
特許文献１では、樹脂層にスルーホール導体を配置するため、インダクタ部品の大きさに対して磁性体の割合が低くなり、インダクタンスを大きくすることが難しいと考えられる。一方、スルーホール導体と磁性体とを接触させた場合、スルーホール導体の信頼性が低下すると考えられる。 In Patent Document 1, since the through-hole conductor is arranged in the resin layer, the ratio of the magnetic material to the size of the inductor component is low, and it is considered difficult to increase the inductance. On the other hand, when the through-hole conductor is brought into contact with the magnetic material, the reliability of the through-hole conductor is considered to decrease.
本発明の目的は、スルーホール導体の信頼性の高いインダクタ内蔵基板を提供することである。 An object of the present invention is to provide a highly reliable inductor-embedded substrate for a through-hole conductor.
本発明に係るインダクタ内蔵基板は、開口が形成されたコア基板と、前記開口内に充填され、第１貫通孔を有する磁性体樹脂と、前記第１貫通孔に形成された金属膜から成る第１スルーホール導体と、を有する。前記磁性体樹脂は６０重量％以上の酸化鉄フィラーを含有し、前記第１貫通孔の表面に平均厚みが０．０１μｍ以上、１μｍ以下の樹脂残渣層が形成される。 The inductor-embedded substrate according to the present invention comprises a core substrate having an opening, a magnetic resin filled in the opening and having a first through hole, and a metal film formed in the first through hole. It has one through-hole conductor. The magnetic resin contains 60% by weight or more of an iron oxide filler, and a resin residue layer having an average thickness of 0.01 μm or more and 1 μm or less is formed on the surface of the first through hole.
本発明のインダクタ内蔵基板は、磁性体樹脂の第１貫通孔に直接金属膜からなる第１スルーホール導体を形成するため、インダクタ部品の磁性体樹脂の体積を大きくし、インダクタンスを大きくすることができる。磁性体樹脂は６０重量％以上の酸化鉄フィラーを含有するため、伝熱性が高く、インダクタ内蔵基板の放熱性が高まる。第１貫通孔の表面の樹脂残渣層は、平均厚みが０．０１μｍ以上、１μｍ以下であるため、第１貫通孔の表面から露出する酸化鉄フィラーが第１スルーホール導体を形成する金属膜と接し、第１スルーホール導体の信頼性が高くなる。 Since the inductor-embedded substrate of the present invention forms the first through-hole conductor made of a metal film directly in the first through hole of the magnetic resin, the volume of the magnetic resin of the inductor component can be increased and the inductance can be increased. it can. Since the magnetic resin contains 60% by weight or more of the iron oxide filler, the heat transfer property is high and the heat dissipation property of the inductor built-in substrate is enhanced. Since the resin residue layer on the surface of the first through hole has an average thickness of 0.01 μm or more and 1 μm or less, the iron oxide filler exposed from the surface of the first through hole forms a metal film forming the first through hole conductor. In contact with each other, the reliability of the first through-hole conductor is increased.
図１（Ａ）は、実施形態のインダクタを内蔵するインダクタ内蔵基板１０の断面図を示す。インダクタ内蔵基板１０は、第１面Ｆと第１面Ｆと反対側の第２面Ｓを有する絶縁性基材２０と、絶縁性基材２０の第１面Ｆ上の第１導体層（導体回路）５８Ｆと、絶縁性基材２０の第２面Ｓ上の第２導体層５８Ｓと、第１導体層５８Ｆと第２導体層５８Ｓを接続しているスルーホール導体３６とで形成されているコア基板３０を有する。コア基板３０は第１面Ｆと第１面Ｆと反対側の第２面Ｓを有する。コア基板３０の第１面Ｆと絶縁性基材２０の第１面Ｆは同じ面であり、コア基板３０の第２面Ｓと絶縁性基材２０の第２面Ｓは同じ面である。絶縁性基材２０は、エポキシなどの樹脂と補強用のガラスクロス等の芯材１４で形成されている。絶縁性基材２０は、さらに、シリカ等の無機粒子を有しても良い。 FIG. 1A shows a cross-sectional view of an inductor built-in substrate 10 having an inductor of the embodiment built-in. The inductor-embedded substrate 10 includes an insulating base material 20 having a first surface F and a second surface S opposite to the first surface F, and a first conductor layer (conductor) on the first surface F of the insulating base material 20. Circuit) 58F, a second conductor layer 58S on the second surface S of the insulating base material 20, and a through-hole conductor 36 connecting the first conductor layer 58F and the second conductor layer 58S. It has a core substrate 30. The core substrate 30 has a first surface F and a second surface S opposite to the first surface F. The first surface F of the core substrate 30 and the first surface F of the insulating base material 20 are the same surface, and the second surface S of the core substrate 30 and the second surface S of the insulating base material 20 are the same surface. The insulating base material 20 is formed of a resin such as epoxy and a core material 14 such as a glass cloth for reinforcement. The insulating base material 20 may further have inorganic particles such as silica.
インダクタ内蔵基板１０は、さらに、コア基板３０の第１面Ｆ上に上側のビルドアップ層４５０Ｆを有する。上側のビルドアップ層４５０Ｆはコア基板３０の第１面Ｆ上に形成されている絶縁層４５０Ａと絶縁層４５０Ａ上の導体層４５８Ａと絶縁層４５０Ａを貫通し第１導体層５８Ｆと導体層４５８Ａを接続しているビア導体４６０Ａとを有する。上側のビルドアップ層４５０Ｆはさらに絶縁層４５０Ａと導体層４５８Ａ上の絶縁層４５０Ｃと絶縁層４５０Ｃ上の導体層４５８Ｃと絶縁層４５０Ｃを貫通し導体層４５８Ａやビア導体４６０Ａと導体層４５８Ｃとを接続するビア導体４６０Ｃを有する。 The inductor-embedded substrate 10 further has an upper build-up layer 450F on the first surface F of the core substrate 30. The upper build-up layer 450F penetrates the insulating layer 450A formed on the first surface F of the core substrate 30, the conductor layer 458A on the insulating layer 450A, and the insulating layer 450A, and passes through the first conductor layer 58F and the conductor layer 458A. It has a via conductor 460A connected to it. The upper build-up layer 450F further penetrates the insulating layer 450A, the insulating layer 450C on the conductor layer 458A, the conductor layer 458C on the insulating layer 450C, and the insulating layer 450C, and connects the conductor layer 458A, the via conductor 460A, and the conductor layer 458C. It has a via conductor 460C.
インダクタ内蔵基板１０は、さらに、コア基板３０の第２面Ｓ上に下側のビルドアップ層４５０Ｓを有する。下側のビルドアップ層４５０Ｓはコア基板３０の第２面Ｓ上に形成されている絶縁層４５０Ｂと絶縁層４５０Ｂ上の導体層４５８Ｂと絶縁層４５０Ｂを貫通し第２導体層５８Ｓと導体層４５８Ｂを接続しているビア導体４６０Ｂとを有する。下側のビルドアップ層４５０Ｓはさらに絶縁層４５０Ｂと導体層４５８Ｂ上の絶縁層４５０Ｄと絶縁層４５０Ｄ上の導体層４５８Ｄと絶縁層４５０Ｄを貫通し導体層４５８Ｂやビア導体４６０Ｂと導体層４５８Ｄとを接続するビア導体４６０Ｄを有する。 The inductor-embedded substrate 10 further has a lower build-up layer 450S on the second surface S of the core substrate 30. The lower build-up layer 450S penetrates the insulating layer 450B formed on the second surface S of the core substrate 30, the conductor layer 458B on the insulating layer 450B, and the insulating layer 450B, and the second conductor layer 58S and the conductor layer 458B. Has a via conductor 460B connecting the above. The lower build-up layer 450S further penetrates the insulating layer 450B, the insulating layer 450D on the conductor layer 458B, the conductor layer 458D on the insulating layer 450D, and the insulating layer 450D, and the conductor layer 458B, the via conductor 460B, and the conductor layer 458D. It has a via conductor 460D to connect.
実施形態のインダクタ内蔵基板は、さらに、上側のビルドアップ層４５０Ｆ上に開口４７１Ｆを有するソルダーレジスト層４７０Ｆと下側のビルドアップ層４５０Ｓ上に開口４７１Ｓを有するソルダーレジスト層４７０Ｓを有する。 The inductor-embedded substrate of the embodiment further has a solder resist layer 470F having an opening 471F on the upper build-up layer 450F and a solder resist layer 470S having an opening 471S on the lower build-up layer 450S.
ソルダーレジスト層４７０Ｆ、４７０Ｓの開口４７１Ｆ、４７１Ｓにより露出している導体層４５８Ｃ、４５８Ｄやビア導体４６０Ｃ、４６０Ｄの上面はパッドとして機能する。パッド上に、Ｎｉ／ＡｕやＮｉ／Ｐｄ／Ａｕ、Ｐｄ／Ａｕ、ＯＳＰから成る保護膜４７２が形成されている。その保護膜上に半田バンプ４７６Ｆ、４７６Ｓが形成されている。上側のビルドアップ層４５０Ｆ上に形成されている半田バンプ４７６Ｆを介して図示しないＩＣチップがインダクタ内蔵基板１０に搭載される。下側のビルドアップ層４５０Ｓ上に形成されている半田バンプ４７６Ｓを介してインダクタ内蔵基板１０はマザーボードに搭載される。 The upper surfaces of the conductor layers 458C and 458D and the via conductors 460C and 460D exposed by the openings 471F and 471S of the solder resist layers 470F and 470S function as pads. A protective film 472 made of Ni / Au, Ni / Pd / Au, Pd / Au, and OSP is formed on the pad. Solder bumps 476F and 476S are formed on the protective film. An IC chip (not shown) is mounted on the inductor built-in substrate 10 via a solder bump 476F formed on the upper build-up layer 450F. The inductor built-in substrate 10 is mounted on the motherboard via the solder bumps 476S formed on the lower build-up layer 450S.
図１（Ｃ）は図１（Ａ）中のコア基板３０の一部を拡大して示す。コア基板３０では、第１導体層５８Ｆと第２導体層５８Ｓとを接続するスルーホール導体３６は、コア基板３０を貫通する第２貫通孔２０ａに形成された第２スルーホール導体３６Ａと、コア基板３０の開口２０ｂ内に充填された磁性体樹脂１８の第１貫通孔１８ｂに形成された第１スルーホール導体３６Ｂとから成る。第２貫通孔２０ａの直径ｄａと第１貫通孔１８ｂの直径ｄｂとはほぼ等しい。第２スルーホール導体３６Ａ、第１スルーホール導体３６Ｂ内には樹脂充填剤１６が充填され、スルーホールランド５８ＦＲは蓋めっきから成る。スルーホールランド５８ＦＲは、第２スルーホール導体３６Ａに形成された第２スルーホールランド５８ＦＲＡと第１スルーホール導体３６Ｂに形成された第１スルーホールランド５８ＦＲＢとから成る。 FIG. 1 (C) shows an enlarged part of the core substrate 30 in FIG. 1 (A). In the core substrate 30, the through-hole conductor 36 connecting the first conductor layer 58F and the second conductor layer 58S is the second through-hole conductor 36A formed in the second through hole 20a penetrating the core substrate 30 and the core. It is composed of a first through-hole conductor 36B formed in the first through hole 18b of the magnetic resin 18 filled in the opening 20b of the substrate 30. The diameter da of the second through hole 20a and the diameter db of the first through hole 18b are substantially equal to each other. The second through-hole conductor 36A and the first through-hole conductor 36B are filled with the resin filler 16, and the through-hole land 58FR is made of lid plating. The through-hole land 58FR includes a second through-hole land 58FRA formed on the second through-hole conductor 36A and a first through-hole land 58FRB formed on the first through-hole conductor 36B.
図１（Ｂ）は、第２スルーホール導体３６Ａに形成された第２スルーホールランド５８ＦＲＡと第１スルーホール導体３６Ｂに形成された第１スルーホールランド５８ＦＲＢとの平面図である。第２スルーホールランド５８ＦＲＡは、第２スルーホール導体３６Ａと同心円状に形成され、第１スルーホールランド５８ＦＲＢは、第１スルーホール導体３６Ｂと同心円状に形成されている。第２スルーホールランド５８ＦＲＡの直径Ｄａと第１スルーホールランド５８ＦＲＢの直径Ｄｂとはほぼ等しい。第２スルーホールランド５８ＦＲＡと第１スルーホールランド５８ＦＲＢとは第１導体層（回路パターン）５８Ｆにより接続されている。第１スルーホールランド５８ＦＲＢの直径Ｄｂは、磁性体樹脂１８の充填された開口２０ｂの直径ＤＢよりも小径に形成されている。即ち、第１スルーホールランド５８ＦＲＢは、磁性体樹脂１８上から絶縁性基材２０まで広がることが無い。 FIG. 1B is a plan view of a second through-hole land 58FRA formed on the second through-hole conductor 36A and a first through-hole land 58FRB formed on the first through-hole conductor 36B. The second through-hole land 58FRA is formed concentrically with the second through-hole conductor 36A, and the first through-hole land 58FRB is formed concentrically with the first through-hole conductor 36B. The diameter Da of the second through-hole land 58FRA and the diameter Db of the first through-hole land 58FRB are substantially equal to each other. The second through-hole land 58FRA and the first through-hole land 58FRB are connected by a first conductor layer (circuit pattern) 58F. The diameter Db of the first through-hole land 58FRB is formed to be smaller than the diameter DB of the opening 20b filled with the magnetic resin 18. That is, the first through-hole land 58FRB does not spread from the magnetic resin 18 to the insulating base material 20.
磁性体樹脂１８は、酸化鉄フィラー（磁性粒子）とエポキシ等の樹脂を含む。磁性粒子として、酸化鉄（III）等の酸化鉄フィラーが挙げられる。磁性体樹脂中の酸化鉄フィラーの含有量は６０重量％〜９０重量％であることが好ましい。酸化鉄フィラーの粒子径は均一で無い方が、重量％を高め、透磁率及び伝熱性を高くできるため望ましい。 The magnetic resin 18 contains an iron oxide filler (magnetic particles) and a resin such as epoxy. Examples of the magnetic particles include iron oxide fillers such as iron (III) oxide. The content of the iron oxide filler in the magnetic resin is preferably 60% by weight to 90% by weight. It is desirable that the particle size of the iron oxide filler is not uniform because the weight% can be increased and the magnetic permeability and heat transfer property can be increased.
図１（Ｃ）に示されるように、コア基板３０を貫通する第２貫通孔２０ａに形成された第２スルーホール導体３６Ａは、第２貫通孔２０ａに接触する。第２スルーホール導体３６Ａは、第２貫通孔２０ａ上の第２無電解めっき膜３２と、該第２無電解めっき膜３２上の第２電解めっき膜３４とから成る。磁性体樹脂１８を貫通する第１貫通孔１８ｂに形成された第１スルーホール導体３６Ｂは、第１貫通孔１８ｂに接触する。第１スルーホール導体３６Ｂは、第１貫通孔１８ｂ上の第２無電解めっき膜３２と、該第２無電解めっき膜３２上の第２電解めっき膜３４とから成る。第２スルーホール導体３６Ａを構成する第２無電解めっき膜３２と第２電解めっき膜３４との厚みｔａは、第１スルーホール導体３６Ｂを構成する第２無電解めっき膜３２と第２電解めっき膜３４との厚みｔｂよりも厚い。伝熱性の低い絶縁性基材２０の第２貫通孔２０ａに形成された第２スルーホール導体３６Ａの厚みｔａは、熱伝導性の高い磁性体樹脂１８の第１貫通孔１８ｂに形成された第１スルーホール導体３６Ｂの厚みｔｂよりも厚くされることで、第２スルーホール導体３６Ａと第１スルーホール導体３６Ｂとの放熱バランスが調整されている。 As shown in FIG. 1C, the second through-hole conductor 36A formed in the second through-hole 20a penetrating the core substrate 30 comes into contact with the second through-hole 20a. The second through-hole conductor 36A is composed of a second electroless plating film 32 on the second through hole 20a and a second electroless plating film 34 on the second electroless plating film 32. The first through-hole conductor 36B formed in the first through-hole 18b penetrating the magnetic resin 18 comes into contact with the first through-hole 18b. The first through-hole conductor 36B is composed of a second electroless plating film 32 on the first through hole 18b and a second electroless plating film 34 on the second electroless plating film 32. The thickness ta of the second electroless plating film 32 and the second electrolytic plating film 34 constituting the second through-hole conductor 36A is the second electroless plating film 32 and the second electrolytic plating forming the first through hole conductor 36B. It is thicker than the thickness tb with the film 34. The thickness ta of the second through-hole conductor 36A formed in the second through-hole 20a of the insulating base material 20 having low heat conductivity is the thickness ta formed in the first through-hole 18b of the magnetic resin 18 having high thermal conductivity. By making the thickness of the 1 through-hole conductor 36B thicker than tb, the heat dissipation balance between the second through-hole conductor 36A and the first through-hole conductor 36B is adjusted.
図５は、実施形態の第１スルーホール導体３６Ｂの断面顕微鏡写真である。
中央のＩ字状の部分が第１スルーホール導体３６Ｂ（第２無電解めっき膜３２、第２電解めっき膜３４）である。Ｉ字状の第１スルーホール導体３６Ｂの左側が、磁性体樹脂１８である。磁性体樹脂１８に設けられた第１貫通孔１８ｂ上に第１スルーホール導体３６Ｂが形成されている。Ｉ字状の第１スルーホール導体３６Ｂの右側が樹脂充填剤１６である。磁性体樹脂１８中の丸い粒子は酸化鉄フィラー１７である。樹脂充填剤１６中の丸い粒子は無機フィラー２１である。磁性体樹脂１８の左側が絶縁性基材２０で、磁性体樹脂１８と絶縁性基材２０との境が開口２０ｂである。
FIG. 5 is a cross-sectional micrograph of the first through-hole conductor 36B of the embodiment.
The central I-shaped portion is the first through-hole conductor 36B (second electroless plating film 32, second electrolytic plating film 34). The left side of the I-shaped first through-hole conductor 36B is the magnetic resin 18. The first through-hole conductor 36B is formed on the first through hole 18b provided in the magnetic resin 18. The resin filler 16 is on the right side of the I-shaped first through-hole conductor 36B. The round particles in the magnetic resin 18 are iron oxide fillers 17. The round particles in the resin filler 16 are the inorganic filler 21. The left side of the magnetic resin 18 is the insulating base material 20, and the boundary between the magnetic resin 18 and the insulating base material 20 is the opening 20b.
図６は、図５中の矢印Ａで指示した第１スルーホール導体３６Ｂの中央部分の倍率を上げた断面顕微鏡写真である。第１スルーホール導体３６Ｂと磁性体樹脂１８との界面に存在する黒い部分が樹脂残渣層１９である。樹脂残渣層１９は、磁性体樹脂１８に第１貫通孔１８ｂをドリルで形成する際に、磁性体樹脂から分離した樹脂成分が、再度、磁性体樹脂側に付着した樹脂残渣である。一旦、分離して再付着しているため、磁性体樹脂から剥がれ易い。実施形態の第１スルーホール導体３６Ｂでは、第１貫通孔１８ｂの表面の樹脂残渣層１９は、平均厚みが０．０１μｍ以上、１μｍ以下である。樹脂残渣層１９は、平均厚みが１μｍ以下であるため、樹脂残渣層１９の切れ目が存在する。樹脂残渣層１９の切れ目において第１貫通孔１８ｂの表面から露出する酸化鉄フィラー１７が第１スルーホール導体３６Ｂを形成する金属膜と接し、第１スルーホール導体の信頼性が高くなる。なお、樹脂リッチ層の平均厚みが１μｍを超えると、樹脂リッチ層がほぼ切れ目無く第１貫通孔の全面を覆うことになる。第１スルーホール導体の信頼性が低くなる。 FIG. 6 is a cross-sectional micrograph in which the magnification of the central portion of the first through-hole conductor 36B indicated by the arrow A in FIG. 5 is increased. The black portion existing at the interface between the first through-hole conductor 36B and the magnetic resin 18 is the resin residue layer 19. The resin residue layer 19 is a resin residue in which the resin component separated from the magnetic resin when the first through hole 18b is formed in the magnetic resin 18 with a drill is again attached to the magnetic resin side. Since it is once separated and reattached, it easily peels off from the magnetic resin. In the first through-hole conductor 36B of the embodiment, the resin residue layer 19 on the surface of the first through hole 18b has an average thickness of 0.01 μm or more and 1 μm or less. Since the resin residue layer 19 has an average thickness of 1 μm or less, there is a break in the resin residue layer 19. The iron oxide filler 17 exposed from the surface of the first through hole 18b at the cut of the resin residue layer 19 comes into contact with the metal film forming the first through hole conductor 36B, and the reliability of the first through hole conductor is improved. When the average thickness of the resin-rich layer exceeds 1 μm, the resin-rich layer covers the entire surface of the first through hole with almost no break. The reliability of the first through-hole conductor becomes low.
図７は、参考例の第１スルーホール導体３６Ｂの断面顕微鏡写真である。
中央のＩ字状の部分が第１スルーホール導体３６Ｂである。Ｉ字状の第１スルーホール導体３６Ｂの右側が、磁性体樹脂１８である。磁性体樹脂１８に設けられた第１貫通孔１８ｂ上に第１スルーホール導体３６Ｂが形成されている。Ｉ字状の第１スルーホール導体３６Ｂの左側が樹脂充填剤１６である。磁性体樹脂１８中の丸い粒子は酸化鉄フィラー１７である。樹脂充填剤１６中の丸い粒子は無機フィラー２１である。磁性体樹脂１８の右側が絶縁性基材２０で、磁性体樹脂１８と絶縁性基材２０との境が開口２０ｂである。
FIG. 7 is a cross-sectional micrograph of the first through-hole conductor 36B of the reference example.
The central I-shaped portion is the first through-hole conductor 36B. The right side of the I-shaped first through-hole conductor 36B is the magnetic resin 18. The first through-hole conductor 36B is formed on the first through hole 18b provided in the magnetic resin 18. The left side of the I-shaped first through-hole conductor 36B is the resin filler 16. The round particles in the magnetic resin 18 are iron oxide fillers 17. The round particles in the resin filler 16 are the inorganic filler 21. The right side of the magnetic resin 18 is the insulating base material 20, and the boundary between the magnetic resin 18 and the insulating base material 20 is the opening 20b.
図８は、図７中の矢印Ｂで指示した第１スルーホール導体３６Ｂの中央部分の倍率を上げた断面顕微鏡写真である。第１スルーホール導体３６Ｂと磁性体樹脂１８との界面に存在する黒い部分が樹脂残渣層１９である。参考例の第１スルーホール導体３６Ｂでは、第１貫通孔１８ｂの表面の樹脂残渣層１９は、平均厚みが１μｍ以上である。樹脂残渣層１９は、平均厚みが１μｍ以上であるため、第１貫通孔１８ｂの表面から露出する酸化鉄フィラー１７と第１スルーホール導体３６Ｂを形成する金属膜との間に切れ目無く樹脂残渣層１９が介在する。参考例では、第１貫通孔１８ｂから露出する酸化鉄フィラー１７から樹脂残渣層１９と共に第１スルーホール導体３６Ｂを形成する金属膜が剥がれ易く、第１スルーホール導体の信頼性が低い。 FIG. 8 is a cross-sectional micrograph in which the magnification of the central portion of the first through-hole conductor 36B indicated by the arrow B in FIG. 7 is increased. The black portion existing at the interface between the first through-hole conductor 36B and the magnetic resin 18 is the resin residue layer 19. In the first through-hole conductor 36B of the reference example, the resin residue layer 19 on the surface of the first through hole 18b has an average thickness of 1 μm or more. Since the resin residue layer 19 has an average thickness of 1 μm or more, the resin residue layer has no break between the iron oxide filler 17 exposed from the surface of the first through hole 18b and the metal film forming the first through-hole conductor 36B. 19 intervenes. In the reference example, the metal film forming the first through-hole conductor 36B together with the resin residue layer 19 is easily peeled off from the iron oxide filler 17 exposed from the first through hole 18b, and the reliability of the first through-hole conductor is low.
図１（Ｃ）に示されるように、第２スルーホールランド５８ＦＲＡ及び絶縁性基材２０上の第１導体層５８Ｆは、最下層の銅箔２２と、該銅箔２２上の第１無電解めっき膜２４ｍと、第１無電解めっき膜２４ｍ上の第１電解めっき膜２４ｄと、第１電解めっき膜２４ｄ上の第２無電解めっき膜３２と、第２無電解めっき膜３２上の第２電解めっき膜３４と、該第２電解めっき膜３４上の第３無電解めっき膜３５と、該第３無電解めっき膜３５上の第３電解めっき膜３７とから成る。第１スルーホールランド５８ＦＲＢ及び磁性体樹脂１８上の第１導体層５８Ｆは、最下層の第１無電解めっき膜２４ｍと、第１無電解めっき膜２４ｍ上の第１電解めっき膜２４ｄと、第１電解めっき膜２４ｄ上の第２無電解めっき膜３２と、第２無電解めっき膜３２上の第２電解めっき膜３４と、該第２電解めっき膜３４上の第３無電解めっき膜３５と、該第３無電解めっき膜３５上の第３電解めっき膜３７とから成る。第１無電解めっき膜２４ｍと第１電解めっき膜２４ｄとはシールド層２４を構成する。第２スルーホールランド５８ＦＲＡ及び絶縁性基材２０上の第１導体層５８Ｆの厚みｔＡは、第１スルーホールランド５８ＦＲＢ及び磁性体樹脂１８上の第１導体層５８Ｆの厚みｔＢよりも、銅箔２２の厚み分厚い。伝熱性の低い絶縁性基材２０上に形成された第２スルーホールランド５８ＦＲＡの厚みｔＡは、熱伝導性の高い磁性体樹脂１８上に形成された第１スルーホールランド５８ＦＲＢの厚みｔＢよりも熱伝導率の高い銅箔２２分厚くされることで、第２スルーホール導体３６Ａと第１スルーホール導体３６Ｂとの放熱バランスが調整されている。 As shown in FIG. 1 (C), the second through hole land 58FRA and the first conductor layer 58F on the insulating base material 20 are the lowest layer copper foil 22 and the first electroplating on the copper foil 22. The plating film 24m, the first electrolytic plating film 24d on the first electrolytic plating film 24m, the second electrolytic plating film 32 on the first electrolytic plating film 24d, and the second on the second electrolytic plating film 32. It is composed of an electrolytic plating film 34, a third electrolytic plating film 35 on the second electrolytic plating film 34, and a third electrolytic plating film 37 on the third electrolytic plating film 35. The first through hole land 58FRB and the first conductor layer 58F on the magnetic resin 18 are the first electroless plating film 24m of the lowest layer, the first electroless plating film 24d on the first electroless plating film 24m, and the first. 1 The second electroless plating film 32 on the electrolytic plating film 24d, the second electroless plating film 34 on the second electroless plating film 32, and the third electroless plating film 35 on the second electroplating film 34. It is composed of a third electrolytic plating film 37 on the third electroless plating film 35. The first electroless plating film 24m and the first electrolytic plating film 24d form a shield layer 24. The thickness tA of the first conductor layer 58F on the second through-hole land 58FRA and the insulating base material 20 is larger than the thickness tB of the first conductor layer 58F on the first through-hole land 58FRB and the magnetic resin 18. 22 is thick. The thickness tA of the second through-hole land 58FRA formed on the insulating base material 20 having low thermal conductivity is larger than the thickness tB of the first through-hole land 58FRB formed on the magnetic resin 18 having high thermal conductivity. By thickening the copper foil having high thermal conductivity by 22 minutes, the heat dissipation balance between the second through-hole conductor 36A and the first through-hole conductor 36B is adjusted.
実施形態のコア基板３０は、図１（Ａ）中に示される磁性体樹脂１８に形成された第１スルーホール導体３６Ｂを介して接続される第１導体層５８Ｆ（接続パターン５８ＦＬ）、第２導体層５８Ｓ（接続パターン５８ＳＬ）とは、ヘリカル状（コア基板の表裏面に対して平行方向の軸線上に沿って螺旋状）に配置され、第１スルーホール導体３６Ｂと共にインダクタ５９を形成する。 The core substrate 30 of the embodiment has a first conductor layer 58F (connection pattern 58FL) and a second conductor layer 58F (connection pattern 58FL) connected via a first through-hole conductor 36B formed on the magnetic resin 18 shown in FIG. 1 (A). The conductor layer 58S (connection pattern 58SL) is arranged in a helical shape (spiral along an axis parallel to the front and back surfaces of the core substrate), and forms an inductor 59 together with the first through-hole conductor 36B.
実施形態のインダクタ内蔵基板１０は、コア基板３０の表面に第１導体層５８Ｆと第２導体層５８Ｓとが形成され、第１導体層５８Ｆと第２導体層５８Ｓとを接続する第１スルーホール導体３６Ｂは、磁性体樹脂１８を貫通する第１貫通孔１８ｂに直接形成されている。このため、インダクタ内蔵基板１０中の磁性体の割合が大きくなり、インダクタンスを大きくすることができる。 In the inductor-embedded substrate 10 of the embodiment, the first conductor layer 58F and the second conductor layer 58S are formed on the surface of the core substrate 30, and the first through hole connecting the first conductor layer 58F and the second conductor layer 58S. The conductor 36B is directly formed in the first through hole 18b that penetrates the magnetic resin 18. Therefore, the proportion of the magnetic material in the inductor built-in substrate 10 increases, and the inductance can be increased.
[実施形態のインダクタ内蔵基板の製造方法]
図２〜図４に実施形態のインダクタ内蔵基板の製造方法が示される。
絶縁性基材２０の両面に銅箔２２の積層された銅張り積層板から成る基板２０ｚが準備される（図２（Ａ））。絶縁性基材２０に磁性体樹脂充填用の開口２０ｂが形成される（図２（Ｂ））。開口２０ｂ内に６０重量％〜９０重量％の酸化鉄フィラー（磁性粒子）とエポキシ樹脂からなる樹脂ペーストが真空印刷される。樹脂ペーストが、樹脂ペーストの粘度が常温の２倍以下となる温度で仮硬化（半硬化）され仮硬化磁性体樹脂１８βが形成される（図２（Ｃ））。
[Manufacturing method of the inductor built-in substrate of the embodiment]
2 to 4 show a method of manufacturing the inductor-embedded substrate of the embodiment.
A substrate 20z made of a copper-clad laminate in which copper foil 22 is laminated on both sides of the insulating base material 20 is prepared (FIG. 2 (A)). An opening 20b for filling the magnetic resin is formed in the insulating base material 20 (FIG. 2B). A resin paste composed of 60% by weight to 90% by weight of iron oxide filler (magnetic particles) and epoxy resin is vacuum-printed in the opening 20b. The resin paste is temporarily cured (semi-cured) at a temperature at which the viscosity of the resin paste is twice or less the room temperature to form the temporarily cured magnetic resin 18β (FIG. 2 (C)).
絶縁性基材２０の表面、開口２０ｂから露出する仮硬化磁性体樹脂１８βの表面に無電解めっき処理で第１無電解めっき膜２４ｍと、電解めっき処理で第１電解めっき膜２４ｄが形成される（図２（Ｄ））。第１無電解めっき膜２４ｍと第１電解めっき膜２４ｄとはシールド層２４を構成する。 A first electroless plating film 24m is formed by electroless plating treatment and a first electrolytic plating film 24d is formed by electroplating treatment on the surface of the insulating base material 20 and the surface of the temporarily cured magnetic resin 18β exposed from the opening 20b. (Fig. 2 (D)). The first electroless plating film 24m and the first electrolytic plating film 24d form a shield layer 24.
絶縁性基材２０にドリル加工で第２貫通孔２０ａが形成される（図２（Ｅ））。この後、薬液により第２貫通孔２０ａがデスミア処理され、第２貫通孔２０ａの側壁に付着した樹脂残渣から成る樹脂リッチ層が除去される。樹脂リッチ層の平均厚みが０．５μｍ以下にされる。デスミア処理の際に、第１無電解めっき膜２４ｍと第１電解めっき膜２４ｄとから成るシールド層２４で覆われた仮硬化磁性体樹脂１８βは、薬液の影響を受けない。仮硬化磁性体樹脂１８βの表面の酸化鉄フィラーは、デスミア処理の影響を受けない。 A second through hole 20a is formed in the insulating base material 20 by drilling (FIG. 2 (E)). After that, the second through hole 20a is desmeared with the chemical solution, and the resin rich layer composed of the resin residue adhering to the side wall of the second through hole 20a is removed. The average thickness of the resin-rich layer is set to 0.5 μm or less. During the desmear treatment, the temporarily cured magnetic resin 18β covered with the shield layer 24 composed of the first electroless plating film 24m and the first electrolytic plating film 24d is not affected by the chemical solution. The iron oxide filler on the surface of the false-cured magnetic resin 18β is not affected by the desmear treatment.
仮硬化磁性体樹脂１８βにドリル加工で第１貫通孔１８ｂが形成される。ドリル加工には、絶縁性基材２０に第２貫通孔２０ａを形成した同じドリルが用いられる。ドリル回転数を下げることで、第１貫通孔１８ｂの表面に付着する樹脂リッチ層（樹脂残渣）の平均厚みが薄くされる。この実施形態では、６０重量％〜９０重量％の酸化鉄フィラーを含むため、本硬化後の孔開けは容易ではないが、本硬化前に形成するため、貫通孔を容易に形成することができる。仮硬化状態の仮硬化磁性基材の磁性材層を加熱して含まれる樹脂を架橋させ、本硬化状態にして磁性体樹脂１８が形成される（図３（Ａ））。ここでは、１５０゜Ｃ〜１９０゜Ｃで１時間加熱する。高圧水洗により、孔開け時の加工スミアが取り除かれる（図３（Ｂ））。通常、デスミアはアルカリ性薬剤で行われるが、アルカリ性薬剤は樹脂を膨潤・剥離する過程で磁性体樹脂１８に含まれる酸化鉄フィラーを脱落させる恐れがあるため、ここでは高圧水洗が行われる。更に、Ｏ2プラズマを用いるドライデスミアで、図６に示されたように第１貫通孔１８ｂの表面の樹脂残渣層１９は、平均厚み１μｍ以下にされる。ここで、ドライデスミアを用いても、樹脂残渣層１９の平均厚みを０．０１μｍ未満にすることはできない。第１貫通孔１８ｂの表面の樹脂残渣層１９の平均厚みは、薬液処理で樹脂リッチ層が除去される第２貫通孔２０ａの表面の樹脂リッチ層の平均厚みよりも厚い。絶縁性基材２０、磁性体樹脂１８の表面の第１電解めっき膜２４ｄ上、第２貫通孔２０ａ、第１貫通孔１８ｂの表面に、無電解めっき処理で第２無電解めっき膜３２と、電解めっき処理で第２電解めっき膜３４が形成される。第２無電解めっき膜３２と第２電解めっき膜３４とで、第２貫通孔２０ａに第２スルーホール導体３６Ａが、第１貫通孔１８ｂに第１スルーホール導体３６Ｂが形成される（図３（Ｃ））。 The first through hole 18b is formed in the temporarily cured magnetic resin 18β by drilling. For drilling, the same drill in which the second through hole 20a is formed in the insulating base material 20 is used. By lowering the drill rotation speed, the average thickness of the resin-rich layer (resin residue) adhering to the surface of the first through hole 18b is reduced. In this embodiment, since 60% by weight to 90% by weight of the iron oxide filler is contained, it is not easy to make holes after the main curing, but since it is formed before the main curing, through holes can be easily formed. .. The magnetic material layer of the temporarily cured magnetic base material in the temporarily cured state is heated to crosslink the resin contained therein, and the magnetic resin 18 is formed in the main cured state (FIG. 3 (A)). Here, it is heated at 150 ° C to 190 ° C for 1 hour. High-pressure water washing removes processed smear during drilling (Fig. 3 (B)). Normally, desmear is performed with an alkaline chemical, but since the alkaline chemical may cause the iron oxide filler contained in the magnetic resin 18 to fall off in the process of swelling and peeling the resin, high-pressure water washing is performed here. Further, in the dry desmear using O2 plasma, the resin residue layer 19 on the surface of the first through hole 18b is made to have an average thickness of 1 μm or less as shown in FIG. Here, even if dry desmear is used, the average thickness of the resin residue layer 19 cannot be less than 0.01 μm. The average thickness of the resin residue layer 19 on the surface of the first through hole 18b is thicker than the average thickness of the resin rich layer on the surface of the second through hole 20a from which the resin rich layer is removed by the chemical treatment. On the surface of the insulating base material 20 and the magnetic resin 18 on the first electrolytic plating film 24d, on the surfaces of the second through holes 20a and the first through holes 18b, the second electroless plating film 32 was formed by electroless plating. The second electroplating film 34 is formed by the electroplating treatment. The second electroless plating film 32 and the second electrolytic plating film 34 form a second through-hole conductor 36A in the second through hole 20a and a first through-hole conductor 36B in the first through hole 18b (FIG. 3). (C)).
第２貫通孔２０ａに形成された第２スルーホール導体３６Ａ内、第１貫通孔１８ｂに形成された第１スルーホール導体３６Ｂ内に樹脂充填剤１６が充填され、絶縁性基材２０の表面が研磨される（図３（Ｄ））。第２電解めっき膜３４上、及び、樹脂充填剤１６の露出面に無電解めっきにより第３無電解めっき膜３５が形成され、第３無電解めっき膜３５上に第３電解めっき膜３７が形成される（図４（Ａ））。第３電解めっき膜３７上に所定パターンのエッチングレジスト５４が形成される（図４（Ｂ））。 The resin filler 16 is filled in the second through-hole conductor 36A formed in the second through-hole 20a and the first through-hole conductor 36B formed in the first through-hole 18b, and the surface of the insulating base material 20 is formed. It is polished (FIG. 3 (D)). A third electroless plating film 35 is formed on the second electrolytic plating film 34 and on the exposed surface of the resin filler 16 by electroless plating, and a third electrolytic plating film 37 is formed on the third electroless plating film 35. (Fig. 4 (A)). A predetermined pattern of etching resist 54 is formed on the third electrolytic plating film 37 (FIG. 4 (B)).
エッチングレジスト５４から露出する第３電解めっき膜３７、第３無電解めっき膜３５、第２電解めっき膜３４、第２無電解めっき膜３２、第１電解めっき膜２４ｄ、第１無電解めっき膜２４ｍ、銅箔２２が除去された後、エッチングレジストが除去され、第１導体層５８Ｆ、第２導体層５８Ｓが形成され、コア基板３０が完成する（図４（Ｃ））。絶縁性基材２０上の第１導体層５８Ｆ、第２導体層５８Ｓ、第２スルーホール導体３６Ａの第１面Ｆ側の第２スルーホールランド５８ＦＲＡ及び第２面Ｓ側の第２スルーホールランド５８ＳＲＡは、最下層の銅箔２２と、該銅箔２２上の第１無電解めっき膜２４ｍと、第１無電解めっき膜２４ｍ上の第１電解めっき膜２４ｄと、第１電解めっき膜２４ｄ上の第２無電解めっき膜３２と、第２無電解めっき膜３２上の第２電解めっき膜３４と、該第２電解めっき膜３４上の第３無電解めっき膜３５と、該第３無電解めっき膜３５上の第３電解めっき膜３７とから成る。磁性体樹脂１８上の第１導体層５８Ｆ、第２導体層５８Ｓ、第１スルーホール導体３６Ｂの第１面Ｆ側の第１スルーホールランド５８ＦＲＢ及び第２面Ｓ側の第１スルーホールランド５８ＳＲＢは、第１無電解めっき膜２４ｍと、第１無電解めっき膜２４ｍ上の第１電解めっき膜２４ｄと、第１電解めっき膜２４ｄ上の第２無電解めっき膜３２と、第２無電解めっき膜３２上の第２電解めっき膜３４と、該第２電解めっき膜３４上の第３無電解めっき膜３５と、該第３無電解めっき膜３５上の第３電解めっき膜３７とから成る。 The third electrolytic plating film 37, the third electrolytic plating film 35, the second electrolytic plating film 34, the second electrolytic plating film 32, the first electrolytic plating film 24d, and the first electrolytic plating film 24m exposed from the etching resist 54. After the copper foil 22 is removed, the etching resist is removed, the first conductor layer 58F and the second conductor layer 58S are formed, and the core substrate 30 is completed (FIG. 4 (C)). The first conductor layer 58F, the second conductor layer 58S, and the second through hole conductor 36A on the insulating base material 20 are the second through hole land 58FRA on the first surface F side and the second through hole land on the second surface S side. The 58SRA has a copper foil 22 as a lowermost layer, a first electroplating film 24m on the copper foil 22, a first electroplating film 24d on the first electroplating film 24m, and a first electroplating film 24d. The second electroplating film 32, the second electroplating film 34 on the second electroplating film 32, the third electroplating film 35 on the second electroplating film 34, and the third electroplating film 35. It is composed of a third electrolytic plating film 37 on the plating film 35. The first through hole land 58FRB on the first surface F side and the first through hole land 58SRB on the second surface S side of the first conductor layer 58F, the second conductor layer 58S, and the first through hole conductor 36B on the magnetic resin 18. Is a first electroless plating film 24m, a first electroless plating film 24d on the first electroless plating film 24m, a second electroless plating film 32 on the first electroplating film 24d, and a second electroless plating. It is composed of a second electroplating film 34 on the film 32, a third electroless plating film 35 on the second electroplating film 34, and a third electroplating film 37 on the third electroless plating film 35.
コア基板３０上に公知の製造方法により、上側のビルドアップ層４５０Ｆ、下側のビルドアップ層４５０Ｓ、ソルダーレジスト層４７０Ｆ、４７０Ｓ、半田バンプ４７６Ｆ、４７６Ｓが形成される（図１（Ａ））。 An upper build-up layer 450F, a lower build-up layer 450S, a solder resist layer 470F, 470S, and solder bumps 476F and 476S are formed on the core substrate 30 by a known manufacturing method (FIG. 1 (A)).
実施形態のインダクタ内蔵基板の製造方法では、磁性体樹脂１８の第１貫通孔１８ｂに第２無電解めっき膜３２、第２電解めっき膜３４からなる第１スルーホール導体３６Ｂを形成するため、インダクタ内蔵基板１０の磁性体樹脂１８の体積を大きくし、インダクタンスを大きくすることができる。磁性体樹脂１８上に第１スルーホール導体３６Ｂが直接設けられるが、樹脂リッチ層の平均厚みが１μｍ以下であるため、第１スルーホール導体の信頼性が低下しない。 In the method for manufacturing an inductor-embedded substrate of the embodiment, an inductor is formed in order to form a first through-hole conductor 36B composed of a second electroless plating film 32 and a second electrolytic plating film 34 in the first through hole 18b of the magnetic resin 18. The volume of the magnetic resin 18 of the built-in substrate 10 can be increased to increase the inductance. Although the first through-hole conductor 36B is directly provided on the magnetic resin 18, the reliability of the first through-hole conductor does not decrease because the average thickness of the resin-rich layer is 1 μm or less.
１０ インダクタ内蔵基板
１８ 磁性体樹脂
１８ｂ 第１貫通孔
１９ 樹脂残渣層
２０ コア基板
２０ａ 第１貫通孔
２０ａ 開口
２２ 銅箔
３０ コア基板
３６Ａ 第２スルーホール導体
３６Ｂ 第１スルーホール導体
10 Inductor built-in substrate 18 Magnetic resin 18b 1st through hole 19 Resin residue layer 20 Core substrate 20a 1st through hole 20a Opening 22 Copper foil 30 Core substrate 36A 2nd through hole conductor 36B 1st through hole conductor
Claims (5)
前記開口内に充填され、第１貫通孔を有する磁性体樹脂と、
前記第１貫通孔に形成された金属膜から成る第１スルーホール導体と、を有するインダクタ内蔵基板であって、
前記磁性体樹脂は６０重量％以上の酸化鉄フィラーを含有し、
前記第１貫通孔の表面に平均厚みが０．０１μｍ以上、１μｍ以下の樹脂残渣層が形成される。 The core substrate with the openings formed and
A magnetic resin filled in the opening and having a first through hole,
An inductor-embedded substrate having a first through-hole conductor made of a metal film formed in the first through hole.
The magnetic resin contains 60% by weight or more of an iron oxide filler and contains
A resin residue layer having an average thickness of 0.01 μm or more and 1 μm or less is formed on the surface of the first through hole.
さらに、前記コア基板に形成された第２貫通孔と、前記第２貫通孔に形成された金属膜から成る第２スルーホール導体を有する。 The board with a built-in inductor according to claim 1.
Further, it has a second through-hole conductor formed in the core substrate and a second through-hole conductor made of a metal film formed in the second through hole.
前記第２貫通孔の表面に樹脂残渣層が形成され、
前記第１貫通孔の前記樹脂残渣層の厚みは、前記第２貫通孔の前記樹脂残渣層の厚みよりも厚い。 The board with a built-in inductor according to claim 2.
A resin residue layer is formed on the surface of the second through hole,
The thickness of the resin residue layer of the first through hole is thicker than the thickness of the resin residue layer of the second through hole.
前記第２貫通孔の表面は、薬液処理で樹脂残渣層の厚みが低減され、
前記第１貫通孔の表面は、ドライデスミア処理で樹脂残渣層の厚みが低減されている。 The substrate with a built-in inductor according to claim 3.
The surface of the second through hole is treated with a chemical solution to reduce the thickness of the resin residue layer.
The thickness of the resin residue layer on the surface of the first through hole is reduced by the dry desmear treatment.
前記第１貫通孔の表面の前記樹脂残渣層の切れ目から露出する酸化鉄フィラーは、前記第１貫通孔に形成される金属膜と接している。 A substrate with a built-in inductor according to any one of claims 1 to 4.
The iron oxide filler exposed from the cut of the resin residue layer on the surface of the first through hole is in contact with the metal film formed in the first through hole.
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