JP2020155486A - 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
- Publication number
- JP2020155486A JP2020155486A JP2019050329A JP2019050329A JP2020155486A JP 2020155486 A JP2020155486 A JP 2020155486A JP 2019050329 A JP2019050329 A JP 2019050329A JP 2019050329 A JP2019050329 A JP 2019050329A JP 2020155486 A JP2020155486 A JP 2020155486A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- semiconductor region
- trench
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 513
- 229910052751 metal Inorganic materials 0.000 claims description 103
- 239000002184 metal Substances 0.000 claims description 103
- 239000012535 impurity Substances 0.000 claims description 101
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 66
- 239000010410 layer Substances 0.000 description 208
- 230000005684 electric field Effects 0.000 description 89
- 238000009792 diffusion process Methods 0.000 description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910021334 nickel silicide Inorganic materials 0.000 description 8
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
第1の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する半導体層と、半導体層の中に存在する第1導電型の第1の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第2の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第3の半導体領域と、半導体層の中に存在し、第2の半導体領域と第1の面との間に位置する第1導電型の第4の半導体領域と、半導体層の中に存在し、第3の半導体領域と第1の面との間に位置する第1導電型の第5の半導体領域と、半導体層の中に存在し、第4の半導体領域と第5の半導体領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第1のトレンチと、半導体層の中に存在し、第4の半導体領域と第5の半導体領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第2のトレンチと、半導体層の中に存在し、第2の半導体領域と第3の半導体領域との間、及び、第1のトレンチと第2のトレンチとの間に位置する第1導電型の第6の半導体領域と、半導体層の中に存在し、第1のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第7の半導体領域と、半導体層の中に存在し、第2のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第8の半導体領域と、第1のトレンチの中に位置する第1のゲート電極と、第2のトレンチの中に位置する第2のゲート電極と、第1のゲート電極と第2の半導体領域との間、及び、第1のゲート電極と第3の半導体領域との間に位置する第1のゲート絶縁層と、第2のゲート電極と第2の半導体領域との間、及び、第2のゲート電極と第3の半導体領域との間に位置する第2のゲート絶縁層と、半導体層の第1の面の側に位置する第1の電極と、半導体層の第2の面の側に位置する第2の電極と、を備える。
第2の実施形態の半導体装置は、第1の半導体領域と第6の半導体領域との間に設けられ、第1の半導体領域よりも第1導電型不純物濃度の高い第1導電型の第10の半導体領域と、第10の半導体領域と第6の半導体領域との間に設けられ、第10の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第11の半導体領域を、更に備える点で第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を一部省略する。
第3の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する半導体層と、半導体層の中に存在する第1導電型の第1の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第2の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第3の半導体領域と、半導体層の中に存在し、第2の半導体領域と第1の面との間に位置する第1の金属領域と、半導体層の中に存在し、第3の半導体領域と第1の面との間に位置する第2の金属領域と、半導体層の中に存在し、第1の金属領域と第2の金属領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第1のトレンチと、半導体層の中に存在し、第1の金属領域と第2の金属領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第2のトレンチと、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置し、第2の半導体領域と第3の半導体領域との間、及び、第1のトレンチと第2のトレンチとの間に位置する第1導電型の第12の半導体領域と、半導体層の中に存在し、第1のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第13の半導体領域と、半導体層の中に存在し、第2のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第14の半導体領域と、第1のトレンチの中に位置する第1のゲート電極と、第2のトレンチの中に位置する第2のゲート電極と、第1のゲート電極と第2の半導体領域との間、及び、第1のゲート電極と第3の半導体領域との間に位置する第1のゲート絶縁層と、第2のゲート電極と第2の半導体領域との間、及び、第2のゲート電極と第3の半導体領域との間に位置する第2のゲート絶縁層と、半導体層の第1の面の側に位置する第1の電極と、半導体層の第2の面の側に位置する第2の電極と、を備える。
第4の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する半導体層と、半導体層の中に存在する第1導電型の第1の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第2の半導体領域と、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置する第2導電型の第3の半導体領域と、半導体層の中に存在し、第2の半導体領域と第1の面との間に位置する第1の金属領域と、半導体層の中に存在し、第3の半導体領域と第1の面との間に位置する第2の金属領域と、半導体層の中に存在し、第1の金属領域と第2の金属領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第1のトレンチと、半導体層の中に存在し、第1の金属領域と第2の金属領域との間に、第2の半導体領域から第3の半導体領域に跨って位置する第2のトレンチと、半導体層の中に存在し、第1の半導体領域と第1の面との間に位置し、第2の半導体領域と第3の半導体領域との間、及び、第1のトレンチと第2のトレンチとの間に位置する第3の金属領域と、半導体層の中に存在し、第1のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第13の半導体領域と、半導体層の中に存在し、第2のトレンチと第1の半導体領域との間に位置し、第2の半導体領域及び第3の半導体領域に接する第2導電型の第14の半導体領域と、第1のトレンチの中に位置する第1のゲート電極と、第2のトレンチの中に位置する第2のゲート電極と、第1のゲート電極と第2の半導体領域との間、及び、第1のゲート電極と第3の半導体領域との間に位置する第1のゲート絶縁層と、第2のゲート電極と第2の半導体領域との間、及び、第2のゲート電極と第3の半導体領域との間に位置する第2のゲート絶縁層と、半導体層の第1の面の側に位置する第1の電極と、半導体層の第2の面の側に位置する第2の電極と、を備える。
第5の実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備える駆動装置である。
第6の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第7の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第16の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
16a 第1のトレンチ
16b 第2のトレンチ
18a 第1のゲート絶縁層
18b 第2のゲート絶縁層
20a 第1のゲート電極
20b 第2のゲート電極
28 ドリフト領域(第1の半導体領域)
30a 第1のpウェル領域(第2の半導体領域)
30b 第2のpウェル領域(第3の半導体領域)
32a 第1のソース領域(第4の半導体領域)
32b 第2のソース領域(第5の半導体領域)
33a 第1の金属ソース領域(第1の金属領域)
33b 第2の金属ソース領域(第2の金属領域)
36 JFET領域(第6の半導体領域、第12の半導体領域)
37 金属JFET領域(第3の金属領域)
38a 第1の電界緩和領域(第7の半導体領域、第13の半導体領域)
38b 第2の電界緩和領域(第8の半導体領域、第14の半導体領域)
40 第1の電流拡散領域(第9の半導体領域)
42 第2の電流拡散領域(第10の半導体領域)
44 空乏化領域(第11の半導体領域)
100 縦型トランジスタ(半導体装置)
150 インバータ回路
200 縦型トランジスタ(半導体装置)
300 縦型トランジスタ(半導体装置)
400 縦型トランジスタ(半導体装置)
700 駆動装置
800 車両
900 車両
1000 昇降機
P1 第1の面
P2 第2の面
Claims (19)
- 第1の面と前記第1の面に対向する第2の面とを有する半導体層と、
前記半導体層の中に存在する第1導電型の第1の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第3の半導体領域と、
前記半導体層の中に存在し、前記第2の半導体領域と前記第1の面との間に位置する第1導電型の第4の半導体領域と、
前記半導体層の中に存在し、前記第3の半導体領域と前記第1の面との間に位置する第1導電型の第5の半導体領域と、
前記半導体層の中に存在し、前記第4の半導体領域と前記第5の半導体領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第1のトレンチと、
前記半導体層の中に存在し、前記第4の半導体領域と前記第5の半導体領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第2のトレンチと、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置し、前記第2の半導体領域と前記第3の半導体領域との間、及び、前記第1のトレンチと前記第2のトレンチとの間に位置する第1導電型の第6の半導体領域と、
前記半導体層の中に存在し、前記第1のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第7の半導体領域と、
前記半導体層の中に存在し、前記第2のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第8の半導体領域と、
前記第1のトレンチの中に位置する第1のゲート電極と、
前記第2のトレンチの中に位置する第2のゲート電極と、
前記第1のゲート電極と前記第2の半導体領域との間、及び、前記第1のゲート電極と前記第3の半導体領域との間に位置する第1のゲート絶縁層と、
前記第2のゲート電極と前記第2の半導体領域との間、及び、前記第2のゲート電極と前記第3の半導体領域との間に位置する第2のゲート絶縁層と、
前記半導体層の前記第1の面の側に位置する第1の電極と、
前記半導体層の前記第2の面の側に位置する第2の電極と、
を備える半導体装置。 - 前記第6の半導体領域の第1導電型不純物濃度は、前記第1の半導体領域の第1導電型不純物濃度よりも高い請求項1記載の半導体装置。
- 前記第7の半導体領域の第2導電型不純物濃度は、前記第2の半導体領域の第2導電型不純物濃度よりも高い請求項1又は請求項2記載の半導体装置。
- 前記第1のトレンチと前記第2の面との間の距離は、前記第2の半導体領域と前記第2の面との間の距離よりも大きい請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1のトレンチと前記第2の面との間の距離は、前記第4の半導体領域と前記第2の面との間の距離よりも大きい請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の半導体領域と前記第2の半導体領域との間に設けられ、前記第1の半導体領域よりも第1導電型不純物濃度の高い第1導電型の第9の半導体領域を、更に備える請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第1の半導体領域と前記第6の半導体領域との間に設けられ、前記第1の半導体領域よりも第1導電型不純物濃度の高い第1導電型の第10の半導体領域を、更に備える請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記第6の半導体領域の第1導電型不純物濃度は、前記第10の半導体領域の第1導電型不純物濃度よりも高い請求項7記載の半導体装置。
- 前記第10の半導体領域と前記第6の半導体領域との間に設けられ、前記第10の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第11の半導体領域を、更に備える請求項8記載の半導体装置。
- 前記第11の半導体領域は、前記第7の半導体領域と前記第8の半導体領域との間に位置する請求項9記載の半導体装置。
- 前記半導体層は炭化珪素である請求項1ないし請求項10いずれか一項記載の半導体装置。
- 第1の面と前記第1の面に対向する第2の面とを有する半導体層と、
前記半導体層の中に存在する第1導電型の第1の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第3の半導体領域と、
前記半導体層の中に存在し、前記第2の半導体領域と前記第1の面との間に位置する第1の金属領域と、
前記半導体層の中に存在し、前記第3の半導体領域と前記第1の面との間に位置する第2の金属領域と、
前記半導体層の中に存在し、前記第1の金属領域と前記第2の金属領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第1のトレンチと、
前記半導体層の中に存在し、前記第1の金属領域と前記第2の金属領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第2のトレンチと、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置し、前記第2の半導体領域と前記第3の半導体領域との間、及び、前記第1のトレンチと前記第2のトレンチとの間に位置する第1導電型の第12の半導体領域と、
前記半導体層の中に存在し、前記第1のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第13の半導体領域と、
前記半導体層の中に存在し、前記第2のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第14の半導体領域と、
前記第1のトレンチの中に位置する第1のゲート電極と、
前記第2のトレンチの中に位置する第2のゲート電極と、
前記第1のゲート電極と前記第2の半導体領域との間、及び、前記第1のゲート電極と前記第3の半導体領域との間に位置する第1のゲート絶縁層と、
前記第2のゲート電極と前記第2の半導体領域との間、及び、前記第2のゲート電極と前記第3の半導体領域との間に位置する第2のゲート絶縁層と、
前記半導体層の前記第1の面の側に位置する第1の電極と、
前記半導体層の前記第2の面の側に位置する第2の電極と、
を備える半導体装置。 - 前記第1の金属領域と前記第2の半導体領域は接する請求項12記載の半導体装置。
- 第1の面と前記第1の面に対向する第2の面とを有する半導体層と、
前記半導体層の中に存在する第1導電型の第1の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第3の半導体領域と、
前記半導体層の中に存在し、前記第2の半導体領域と前記第1の面との間に位置する第1の金属領域と、
前記半導体層の中に存在し、前記第3の半導体領域と前記第1の面との間に位置する第2の金属領域と、
前記半導体層の中に存在し、前記第1の金属領域と前記第2の金属領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第1のトレンチと、
前記半導体層の中に存在し、前記第1の金属領域と前記第2の金属領域との間に、前記第2の半導体領域から前記第3の半導体領域に跨って位置する第2のトレンチと、
前記半導体層の中に存在し、前記第1の半導体領域と前記第1の面との間に位置し、前記第2の半導体領域と前記第3の半導体領域との間、及び、前記第1のトレンチと前記第2のトレンチとの間に位置する第3の金属領域と、
前記半導体層の中に存在し、前記第1のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第13の半導体領域と、
前記半導体層の中に存在し、前記第2のトレンチと前記第1の半導体領域との間に位置し、前記第2の半導体領域及び前記第3の半導体領域に接する第2導電型の第14の半導体領域と、
前記第1のトレンチの中に位置する第1のゲート電極と、
前記第2のトレンチの中に位置する第2のゲート電極と、
前記第1のゲート電極と前記第2の半導体領域との間、及び、前記第1のゲート電極と前記第3の半導体領域との間に位置する第1のゲート絶縁層と、
前記第2のゲート電極と前記第2の半導体領域との間、及び、前記第2のゲート電極と前記第3の半導体領域との間に位置する第2のゲート絶縁層と、
前記半導体層の前記第1の面の側に位置する第1の電極と、
前記半導体層の前記第2の面の側に位置する第2の電極と、
を備える半導体装置。 - 前記第1の金属領域と前記第2の半導体領域は接する請求項14記載の半導体装置。
- 請求項1ないし請求項15いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項15いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項15いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項15いずれか一項記載の半導体装置を備える昇降機。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019050329A JP6992021B2 (ja) | 2019-03-18 | 2019-03-18 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
US16/555,291 US10998400B2 (en) | 2019-03-18 | 2019-08-29 | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019050329A JP6992021B2 (ja) | 2019-03-18 | 2019-03-18 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020155486A true JP2020155486A (ja) | 2020-09-24 |
JP6992021B2 JP6992021B2 (ja) | 2022-01-13 |
Family
ID=72514010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019050329A Active JP6992021B2 (ja) | 2019-03-18 | 2019-03-18 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10998400B2 (ja) |
JP (1) | JP6992021B2 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013077761A (ja) * | 2011-09-30 | 2013-04-25 | Toshiba Corp | 炭化珪素半導体装置 |
JP2015012294A (ja) * | 2013-07-02 | 2015-01-19 | ゼネラル・エレクトリック・カンパニイ | 大きなチャネル周縁部を備えた金属酸化膜半導体(mos)デバイス及びその製造方法 |
JP2015115375A (ja) * | 2013-12-09 | 2015-06-22 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置 |
WO2015177914A1 (ja) * | 2014-05-23 | 2015-11-26 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法、電力変換装置、3相モータシステム、自動車、および鉄道車両 |
JP2016127073A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社東芝 | 半導体装置 |
JP2018186125A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019003967A (ja) * | 2017-06-09 | 2019-01-10 | 国立研究開発法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
JP2019012780A (ja) * | 2017-06-30 | 2019-01-24 | 株式会社日立製作所 | 炭化ケイ素半導体装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016134793A (ja) | 2015-01-20 | 2016-07-25 | パナソニックIpマネジメント株式会社 | 通信装置、負荷制御システム、負荷制御装置 |
KR102276905B1 (ko) | 2015-01-29 | 2021-07-12 | 삼성전자주식회사 | 반도체 장치 |
JP6309656B2 (ja) | 2015-02-12 | 2018-04-11 | 株式会社日立製作所 | 半導体装置及びその製造方法、電力変換装置、3相モータシステム、自動車並びに鉄道車両 |
JP7052330B2 (ja) * | 2017-12-13 | 2022-04-12 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
-
2019
- 2019-03-18 JP JP2019050329A patent/JP6992021B2/ja active Active
- 2019-08-29 US US16/555,291 patent/US10998400B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013077761A (ja) * | 2011-09-30 | 2013-04-25 | Toshiba Corp | 炭化珪素半導体装置 |
JP2015012294A (ja) * | 2013-07-02 | 2015-01-19 | ゼネラル・エレクトリック・カンパニイ | 大きなチャネル周縁部を備えた金属酸化膜半導体(mos)デバイス及びその製造方法 |
JP2015115375A (ja) * | 2013-12-09 | 2015-06-22 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置 |
WO2015177914A1 (ja) * | 2014-05-23 | 2015-11-26 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法、電力変換装置、3相モータシステム、自動車、および鉄道車両 |
JP2016127073A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社東芝 | 半導体装置 |
JP2018186125A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019003967A (ja) * | 2017-06-09 | 2019-01-10 | 国立研究開発法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
JP2019012780A (ja) * | 2017-06-30 | 2019-01-24 | 株式会社日立製作所 | 炭化ケイ素半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20200303494A1 (en) | 2020-09-24 |
JP6992021B2 (ja) | 2022-01-13 |
US10998400B2 (en) | 2021-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10177251B2 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
JP6526549B2 (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
US10763354B2 (en) | Semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
US9685551B2 (en) | Semiconductor device and inverter circuit | |
US9728608B2 (en) | Semiconductor device, inverter circuit, and vehicle | |
US10770549B2 (en) | Semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
CN112310216A (zh) | 半导体装置、逆变器电路、驱动装置、车辆及升降机 | |
JP2016181672A (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
US11201223B2 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator each having a threshold-voltage-increasing portion in silicon carbide layer | |
JP7278902B2 (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP7166053B2 (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP6992021B2 (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
JP7023818B2 (ja) | 半導体装置、インバータ回路、駆動装置、車両、および昇降機 | |
JP2022030298A (ja) | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 | |
US20230317844A1 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US11201210B2 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US20230307536A1 (en) | Semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
US20220310791A1 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US20240097020A1 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US11121249B2 (en) | Semiconductor device, inverter circuit, driving device, vehicle, and elevator | |
US20240096938A1 (en) | Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
US20230299192A1 (en) | Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator | |
US20230299193A1 (en) | Semiconductor device, inverter circuit, drive device, vehicle, and elevator | |
JP2023043336A (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210610 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210721 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211208 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6992021 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |