JP2020150363A - Filter and multiplexer - Google Patents

Filter and multiplexer Download PDF

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JP2020150363A
JP2020150363A JP2019044797A JP2019044797A JP2020150363A JP 2020150363 A JP2020150363 A JP 2020150363A JP 2019044797 A JP2019044797 A JP 2019044797A JP 2019044797 A JP2019044797 A JP 2019044797A JP 2020150363 A JP2020150363 A JP 2020150363A
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elastic wave
wave resonator
filter
pass band
resonance frequency
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昊成 秋
Hosung Choo
昊成 秋
井上　真
Makoto Inoue
真 井上
英行 関根
Hideyuki Sekine
英行 関根
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Taiyo Yuden Co Ltd
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Abstract

To improve steepness of an attenuation amount.SOLUTION: A filter 11 comprises: a first element that is connected in series between an input terminal T1 and an output terminal T2, and that is any one of a capacitor and an inductor; a second element that is connected in parallel with the first element between the input terminal and the output terminal, and that is the other being different from the first element, of the capacitor and the inductor; a third element that is connected in parallel with the first element and in series with the second element between the input terminal and the output terminal, and that is the other being different from the first element, of the capacitor and the inductor; a first acoustic wave resonator R1 in which one end is connected to a node N3 between the second element and the third element and the other end is grounded; and a resonance circuit 15 that includes a second acoustic wave resonator R2 which is connected in series with the second element and the third element between the input terminal and the output terminal.SELECTED DRAWING: Figure 4

Description

本発明は、フィルタおよびマルチプレクサに関し、例えば弾性波共振器を有するフィルタおよびマルチプレクサに関する。 The present invention relates to filters and multiplexers, for example, filters and multiplexers having elastic wave resonators.

キャパシタおよびインダクタにより形成されたＬＣ回路に、弾性波共振器を設けるフィルタが知られている（例えば特許文献１、２）。 A filter in which an elastic wave resonator is provided in an LC circuit formed by a capacitor and an inductor is known (for example, Patent Documents 1 and 2).

特開２０１８−１２９６８０号公報JP-A-2018-129680 特開２０１８−１２９６８３号公報JP-A-2018-129683

しかしながら、特許文献１および２のフィルタでは、通過帯域と阻止帯域との間の遷移領域における減衰量の急峻性が十分ではない。 However, in the filters of Patent Documents 1 and 2, the steepness of the amount of attenuation in the transition region between the pass band and the stop band is not sufficient.

本発明は、上記課題に鑑みなされたものであり、減衰量の急峻性を向上させることを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to improve the steepness of the attenuation amount.

本発明は、入力端子と出力端子との間に直列に接続され、キャパシタおよびインダクタのいずれか一方である第１素子と、前記入力端子と前記出力端子との間に前記第１素子と並列に接続され、キャパシタおよびインダクタのうち前記第１素子と異なる他方である第２素子と、前記入力端子と前記出力端子との間に前記第１素子と並列にかつ前記第２素子と直列に接続され、キャパシタおよびインダクタのうち前記第１素子と異なる他方である第３素子と、一端が前記第２素子と前記第３素子との間のノードに接続され、他端が接地された第１弾性波共振器と、前記入力端子と前記出力端子との間において前記第２素子および前記第３素子と直列に接続された第２弾性波共振器を含む共振回路と、を備えるフィルタである。 In the present invention, the first element, which is connected in series between the input terminal and the output terminal and is either a capacitor or an inductor, and the first element in parallel between the input terminal and the output terminal. The second element, which is the other capacitor and inductor different from the first element, is connected between the input terminal and the output terminal in parallel with the first element and in series with the second element. The first elastic wave, which is the other of the capacitors and inductors, which is different from the first element, and one end connected to the node between the second element and the third element and the other end grounded. It is a filter including a resonator and a resonance circuit including a second elastic wave resonator connected in series with the second element and the third element between the input terminal and the output terminal.

上記構成において、前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、前記共振回路が主に形成する第３減衰極は前記通過帯域と前記第２減衰極との間に位置する構成とすることができる。 In the above configuration, the first attenuation pole mainly formed by the first element, the second element, and the third element is higher than the pass band of the filter, and the first elastic wave resonator mainly forms the first attenuation pole. The two attenuation poles are located between the passband and the first attenuation pole, and the third attenuation pole mainly formed by the resonance circuit is located between the passband and the second attenuation pole. can do.

上記構成において、前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、前記共振回路の***振周波数は前記第１弾性波共振器の単体の***振周波数の１．０５倍以下である構成とすることができる。 In the above configuration, the first attenuation pole mainly formed by the first element, the second element, and the third element is higher than the passing band of the filter, and the first elastic wave resonator mainly forms the first attenuation pole. The two attenuation poles are located between the passing band and the first attenuation pole, and the anti-resonance frequency of the resonance circuit is 1.05 times or less the anti-resonance frequency of the first elastic wave resonator alone. Can be.

上記構成において、前記共振回路は、前記第１素子と並列接続され、前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、前記共振回路の***振周波数は前記第１弾性波共振器の単体の***振周波数より低い構成とすることができる。 In the above configuration, the resonance circuit is connected in parallel with the first element, and the first attenuation pole formed mainly by the first element, the second element, and the third element is higher than the pass band of the filter. The second attenuation pole mainly formed by the first elastic wave resonator is located between the passing band and the first attenuation pole, and the anti-resonance frequency of the resonance circuit is the anti-resonance frequency of the first elastic wave resonator. The configuration can be lower than the anti-resonant frequency of a single unit.

上記構成において、前記第１素子、前記第２素子および前記第３素子が主に形成する減衰極は、前記フィルタの通過帯域より高く、前記第１弾性波共振器の単体の***振周波数および前記第２弾性波共振器の単体の***振周波数は、前記フィルタの通過帯域より高く、前記減衰極より低い構成とすることができる。 In the above configuration, the attenuation poles mainly formed by the first element, the second element, and the third element are higher than the passing band of the filter, and the anti-resonance frequency of the first elastic wave resonator and the said The anti-resonance frequency of the second elastic wave resonator alone may be higher than the pass band of the filter and lower than the attenuation pole.

上記構成において、前記第１弾性波共振器の単体の共振周波数および前記第２弾性波共振器の単体の共振周波数は、前記フィルタの通過帯域内に位置する構成とすることができる。 In the above configuration, the resonance frequency of the first elastic wave resonator and the resonance frequency of the second elastic wave resonator can be located within the pass band of the filter.

上記構成において、前記共振回路は、前記第２弾性波共振器単体である構成とすることができる。 In the above configuration, the resonance circuit may be configured to be the second elastic wave resonator alone.

上記構成において、前記共振回路は、前記第２弾性波共振器に並列にかつ前記第２素子および前記第３素子に直列に接続されたキャパシタを備える構成とすることができる。 In the above configuration, the resonance circuit may include a capacitor connected in parallel with the second elastic wave resonator and in series with the second element and the third element.

上記構成において、前記第１素子はインダクタであり、前記第２素子および前記第３素子はキャパシタである構成とすることができる。 In the above configuration, the first element may be an inductor, and the second element and the third element may be capacitors.

本発明は、上記フィルタを含むマルチプレクサである。 The present invention is a multiplexer including the above filter.

本発明によれば、減衰量の急峻性を向上させることができる。 According to the present invention, the steepness of the attenuation amount can be improved.

図１（ａ）は、比較例および実施例に用いられる弾性表面波共振器の平面図であり、図１（ｂ）は、比較例および実施例に用いられる圧電薄膜共振器の断面図である。FIG. 1A is a plan view of the surface acoustic wave resonator used in Comparative Examples and Examples, and FIG. 1B is a cross-sectional view of the piezoelectric thin film resonator used in Comparative Examples and Examples. .. 図２は、比較例１に係るフィルタの回路図である。FIG. 2 is a circuit diagram of the filter according to Comparative Example 1. 図３は、比較例１に係るフィルタの通過特性を示す図である。FIG. 3 is a diagram showing the passing characteristics of the filter according to Comparative Example 1. 図４は、実施例１に係るフィルタの回路図である。FIG. 4 is a circuit diagram of the filter according to the first embodiment. 図５は、実施例１に係るフィルタの通過特性を示す図である。FIG. 5 is a diagram showing the passing characteristics of the filter according to the first embodiment. 図６は、実施例１の変形例１に係るフィルタの回路図である。FIG. 6 is a circuit diagram of the filter according to the first modification of the first embodiment. 図７は、実施例１の変形例１に係るフィルタの通過特性を示す図である。FIG. 7 is a diagram showing the passing characteristics of the filter according to the first modification of the first embodiment. 図８は、実施例１の変形例２に係るフィルタの回路図である。FIG. 8 is a circuit diagram of the filter according to the second modification of the first embodiment. 図９は、実施例１の変形例２に係るフィルタの通過特性を示す図である。FIG. 9 is a diagram showing the passing characteristics of the filter according to the second modification of the first embodiment. 図１０は、実施例１の変形例３に係るフィルタの回路図である。FIG. 10 is a circuit diagram of the filter according to the third modification of the first embodiment. 図１１は、実施例２に係るダイプレクサの回路図である。FIG. 11 is a circuit diagram of the diplexer according to the second embodiment.

まず、比較例および実施例に用いられる弾性波共振器について説明する。図１（ａ）は、比較例および実施例に用いられる弾性表面波共振器の平面図である。図１（ａ）に示すように、圧電基板２０の上面にＩＤＴ（Interdigital Transducer）２５と反射器２６が設けられている。ＩＤＴ２５は、互いに対向する１対の櫛型電極２４を有する。櫛型電極２４は、複数の電極指２２と複数の電極指２２を接続するバスバー２３とを有する。反射器２６は、ＩＤＴ２５の電極指２２の配列する方向における両側に設けられている。ＩＤＴ２５が圧電基板２０に弾性表面波を励振する。弾性表面波共振器は、１ポート共振器として構成される。圧電基板２０は、例えば、タンタル酸リチウム基板、ニオブ酸リチウム基板または水晶基板である。圧電基板２０は、例えばサファイア基板、スピネル基板、アルミナ基板、水晶基板またはシリコン基板等の支持基板上に接合されていてもよい。さらに、圧電基板２０と支持基板との間に酸化シリコンまたは窒化アルミニウム等の絶縁体層を設けてもよい。ＩＤＴ２５および反射器２６は例えばアルミニウム膜、銅膜またはモリブデン膜により形成される。圧電基板２０上にＩＤＴ２５および反射器２６を覆うように保護膜または温度補償膜が設けられていてもよい。 First, elastic wave resonators used in Comparative Examples and Examples will be described. FIG. 1A is a plan view of a surface acoustic wave resonator used in Comparative Examples and Examples. As shown in FIG. 1A, an IDT (Interdigital Transducer) 25 and a reflector 26 are provided on the upper surface of the piezoelectric substrate 20. The IDT 25 has a pair of comb-shaped electrodes 24 facing each other. The comb-shaped electrode 24 has a plurality of electrode fingers 22 and a bus bar 23 for connecting the plurality of electrode fingers 22. Reflectors 26 are provided on both sides of the IDT 25 in the direction in which the electrode fingers 22 are arranged. The IDT 25 excites a surface acoustic wave on the piezoelectric substrate 20. The surface acoustic wave resonator is configured as a one-port resonator. The piezoelectric substrate 20 is, for example, a lithium tantalate substrate, a lithium niobate substrate, or a quartz substrate. The piezoelectric substrate 20 may be bonded on a support substrate such as a sapphire substrate, a spinel substrate, an alumina substrate, a crystal substrate, or a silicon substrate. Further, an insulator layer such as silicon oxide or aluminum nitride may be provided between the piezoelectric substrate 20 and the support substrate. The IDT 25 and the reflector 26 are formed of, for example, an aluminum film, a copper film or a molybdenum film. A protective film or a temperature compensation film may be provided on the piezoelectric substrate 20 so as to cover the IDT 25 and the reflector 26.

図１（ｂ）は、比較例および実施例に用いられる圧電薄膜共振器の断面図である。図１（ｂ）に示すように、基板３０上に圧電膜３４が設けられている。圧電膜３４を挟むように下部電極３２および上部電極３６が設けられている。下部電極３２と基板３０との間に空隙３８が形成されている。圧電膜３４の少なくとも一部を挟み下部電極３２と上部電極３６とが対向する領域が共振領域３５である。共振領域３５内の下部電極３２および上部電極３６は圧電膜３４内に、厚み縦振動モードの弾性波を励振する。圧電薄膜共振器は、１ポート共振器として構成される。基板３０は、例えばサファイア基板、スピネル基板、アルミナ基板、ガラス基板、水晶基板またはシリコン基板である。下部電極３２および上部電極３６は例えばルテニウム膜等の金属膜である。圧電膜３４は例えば窒化アルミニウム膜である。空隙３８の代わりに弾性波を反射する音響反射膜が設けられていてもよい。 FIG. 1B is a cross-sectional view of the piezoelectric thin film resonator used in Comparative Examples and Examples. As shown in FIG. 1 (b), the piezoelectric film 34 is provided on the substrate 30. The lower electrode 32 and the upper electrode 36 are provided so as to sandwich the piezoelectric film 34. A gap 38 is formed between the lower electrode 32 and the substrate 30. The region where the lower electrode 32 and the upper electrode 36 face each other with at least a part of the piezoelectric film 34 sandwiched is the resonance region 35. The lower electrode 32 and the upper electrode 36 in the resonance region 35 excite elastic waves in the thickness longitudinal vibration mode in the piezoelectric film 34. The piezoelectric thin film resonator is configured as a 1-port resonator. The substrate 30 is, for example, a sapphire substrate, a spinel substrate, an alumina substrate, a glass substrate, a crystal substrate, or a silicon substrate. The lower electrode 32 and the upper electrode 36 are metal films such as a ruthenium film. The piezoelectric film 34 is, for example, an aluminum nitride film. An acoustic reflection film that reflects elastic waves may be provided instead of the void 38.

［比較例１］
図２は、比較例１に係るフィルタの回路図である。図２に示すように、フィルタ１０はキャパシタＣ１、Ｃ２、インダクタＬ１、Ｌ２および弾性波共振器Ｒ１を備えている。キャパシタＣ１およびＣ２は端子Ｔ１とＴ２との間に直列に接続されている。インダクタＬ１は端子Ｔ１とキャパシタＣ１の間のノードＮ１と端子Ｔ２とキャパシタＣ２との間のノードＮ２との間においてキャパシタＣ１およびＣ２と並列接続されている。弾性波共振器Ｒ１の一端はインダクタＬ２を介しキャパシタＣ１とＣ２との間のノードＮ３に接続され、他端はグランド端子Ｔｇに接続されている。インダクタＬ２は配線のインダクタンスに相当する。 [Comparative Example 1]
FIG. 2 is a circuit diagram of the filter according to Comparative Example 1. As shown in FIG. 2, the filter 10 includes capacitors C1 and C2, inductors L1 and L2, and elastic wave resonator R1. Capacitors C1 and C2 are connected in series between terminals T1 and T2. The inductor L1 is connected in parallel with the capacitors C1 and C2 between the node N1 between the terminal T1 and the capacitor C1 and the node N2 between the terminal T2 and the capacitor C2. One end of the elastic wave resonator R1 is connected to the node N3 between the capacitors C1 and C2 via the inductor L2, and the other end is connected to the ground terminal Tg. The inductor L2 corresponds to the inductance of the wiring.

比較例１のフィルタ１０の端子Ｔ１とＴ２との間の通過特性をシミュレーションした。シミュレーション条件は以下である。
キャパシタＣ１、Ｃ２のキャパシタンス
Ｃ１：０．６８ｐＦ
Ｃ２：０．７５ｐＦ
インダクタＬ１、Ｌ２のインダクタンス
Ｌ１：２．９ｎＨ
Ｌ２：０．１ｎＨ
弾性波共振器Ｒ１の構造：図１（ｂ）で示した圧電薄膜共振器
基板３０：シリコン基板
下部電極３２：ルテニウム膜
圧電膜３４：窒化アルミニウム膜
上部電極３６：ルテニウム膜
弾性波共振器Ｒ１の特性
共振周波数ｆｒ１：４９８７ＭＨｚ
***振周波数ｆａ１：５１５１ＭＨｚ
共振周波数ｆｒが約５０００ＭＨｚとなる下部電極３２、圧電膜３４および上部電極３６の厚さは、例えばそれぞれ６０ｎｍ、４００ｎｍおよび６０ｎｍである。 The passing characteristics between the terminals T1 and T2 of the filter 10 of Comparative Example 1 were simulated. The simulation conditions are as follows.
Capacitance of capacitors C1 and C2 C1: 0.68pF
C2: 0.75pF
Inductances of inductors L1 and L2 L1: 2.9nH
L2: 0.1nH
Structure of elastic wave resonator R1: Piezoelectric thin film resonator substrate 30: silicon substrate Lower electrode 32: ruthenium film Piezoelectric film 34: aluminum nitride film Upper electrode 36: ruthenium film Elastic wave resonator R1 Characteristics Resonance frequency fr1: 4987MHz
Antiresonance frequency fa1: 5151MHz
The thicknesses of the lower electrode 32, the piezoelectric film 34, and the upper electrode 36 having a resonance frequency fr of about 5000 MHz are, for example, 60 nm, 400 nm, and 60 nm, respectively.

図３は、比較例１に係るフィルタの通過特性を示す図である。フィルタ１０の通過特性、および弾性波共振器Ｒ１をシャント接続したときの通過特性である。図３に示すように、キャパシタＣ１、Ｃ２およびインダクタＬ１の並列共振回路が主に形成する減衰極Ａ１の周波数は通過帯域Ｐａｓｓより高い。通過帯域Ｐａｓｓの高周波端は例えば減衰量の極大の周波数である。弾性波共振器Ｒ１が主に形成する減衰極Ａ２は通過帯域Ｐａｓｓと減衰極Ａ１との間に位置する。減衰極Ａ２のボトム周波数は５１５７ＭＨｚである。減衰極Ａ２により通過帯域と阻止帯域との間の遷移領域における減衰量を急峻に変化させることができる。急峻性として減衰量が−５ｄＢと−２０ｄＢとの間の周波数間隔を定義する。図３では、急峻性は約５２．３ＭＨｚである。しかしながら、比較例１における急峻性は十分でない。以下、急峻性を高くできる実施例について説明する。 FIG. 3 is a diagram showing the passing characteristics of the filter according to Comparative Example 1. These are the pass characteristics of the filter 10 and the pass characteristics when the elastic wave resonator R1 is shunted. As shown in FIG. 3, the frequency of the attenuation pole A1 mainly formed by the parallel resonant circuit of the capacitors C1 and C2 and the inductor L1 is higher than the pass band Pass. The high frequency end of the pass band Pass is, for example, the frequency at which the attenuation is maximized. The attenuation pole A2 mainly formed by the elastic wave resonator R1 is located between the pass band Pass and the attenuation pole A1. The bottom frequency of the attenuation pole A2 is 5157 MHz. The attenuation pole A2 can sharply change the amount of attenuation in the transition region between the pass band and the stop band. As steepness, a frequency interval with an attenuation of -5 dB and -20 dB is defined. In FIG. 3, the steepness is about 52.3 MHz. However, the steepness in Comparative Example 1 is not sufficient. Hereinafter, examples in which steepness can be increased will be described.

図４は、実施例１に係るフィルタの回路図である。図４に示すように、実施例１のフィルタ１１では、共振回路１５として弾性波共振器Ｒ２が設けられている。弾性波共振器Ｒ２の一端はノードＮ１に他端はキャパシタＣ２に接続されている。その他の構成は比較例１と同じある。 FIG. 4 is a circuit diagram of the filter according to the first embodiment. As shown in FIG. 4, in the filter 11 of the first embodiment, the elastic wave resonator R2 is provided as the resonance circuit 15. One end of the elastic wave resonator R2 is connected to the node N1 and the other end is connected to the capacitor C2. Other configurations are the same as in Comparative Example 1.

実施例１のフィルタ１１のシミュレーション条件は以下である。
キャパシタＣ１、Ｃ２のキャパシタンス
Ｃ１：０．６０ｐＦ
Ｃ２：０．９５ｐＦ
インダクタＬ１、Ｌ２のインダクタンス
Ｌ１：３．５ｎＨ
Ｌ２：０．１ｎＨ
弾性波共振器Ｒ１の特性
共振周波数ｆｒ１：４９８７ＭＨｚ
***振周波数ｆａ１：５１５１ＭＨｚ
弾性波共振器Ｒ２の特性
共振周波数ｆｒ２：４９２３ＭＨｚ
***振周波数ｆａ２：５１０４ＭＨｚ The simulation conditions of the filter 11 of the first embodiment are as follows.
Capacitance of capacitors C1 and C2 C1: 0.60pF
C2: 0.95pF
Inductances of inductors L1 and L2 L1: 3.5nH
L2: 0.1nH
Characteristics of elastic wave resonator R1 Resonance frequency fr1: 4987MHz
Antiresonance frequency fa1: 5151MHz
Characteristics of elastic wave resonator R2 Resonance frequency fr2: 4923 MHz
Antiresonance frequency fa2: 5104MHz

図５は、実施例１に係るフィルタの通過特性を示す図である。フィルタ１１の通過特性、弾性波共振器Ｒ１およびＲ２をシャント接続したときの通過特性である。図５に示すように、弾性波共振器Ｒ１が主に形成する減衰極Ａ２と通過帯域Ｐａｓｓとの間に、共振回路１５が主に形成する減衰極Ａ３が位置している。すなわち、減衰極Ａ２およびＡ３は極小（ボトム）を有し、減衰極Ａ３の極小は通過帯域と減衰極Ａ２の極小との間に位置する。減衰極Ａ２のボトム周波数は５１５７ＭＨｚである。比較例１の図３と比較し、減衰極Ａ３により通過帯域と阻止帯域との間の減衰量をより急峻に変化させることができる。急峻性は約２７．９ＭＨｚである。 FIG. 5 is a diagram showing the passing characteristics of the filter according to the first embodiment. It is the passing characteristic of the filter 11 and the passing characteristic when the elastic wave resonators R1 and R2 are shunted. As shown in FIG. 5, the attenuation pole A3 mainly formed by the resonance circuit 15 is located between the attenuation pole A2 mainly formed by the elastic wave resonator R1 and the pass band Pass. That is, the attenuation poles A2 and A3 have a minimum (bottom), and the minimum of the attenuation pole A3 is located between the pass band and the minimum of the attenuation pole A2. The bottom frequency of the attenuation pole A2 is 5157 MHz. Compared with FIG. 3 of Comparative Example 1, the amount of attenuation between the pass band and the blocking band can be changed more steeply by the attenuation pole A3. The steepness is about 27.9 MHz.

［実施例１の変形例１］
図６は、実施例１の変形例１に係るフィルタの回路図である。図６に示すように、実施例１の変形例１のフィルタ１２では、共振回路１５として弾性波共振器Ｒ２とキャパシタＣ３が設けられている。キャパシタＣ３は、ノードＮ３とキャパシタＣ２との間において弾性波共振器Ｒ２に並列接続されている。その他の構成は実施例１と同じある。 [Modification 1 of Example 1]
FIG. 6 is a circuit diagram of the filter according to the first modification of the first embodiment. As shown in FIG. 6, in the filter 12 of the modification 1 of the first embodiment, the elastic wave resonator R2 and the capacitor C3 are provided as the resonance circuit 15. The capacitor C3 is connected in parallel to the elastic wave resonator R2 between the node N3 and the capacitor C2. Other configurations are the same as those in the first embodiment.

実施例１の変形例１のフィルタ１２のシミュレーション条件は以下である。
キャパシタＣ１、Ｃ２のキャパシタンス
Ｃ１：１．０５ｐＦ
Ｃ２：１．１ｐＦ
Ｃ３：２．４ｐＦ
インダクタＬ１、Ｌ２のインダクタンス
Ｌ１：２．４５ｎＨ
Ｌ２：０．１ｎＨ
弾性波共振器Ｒ１の特性
共振周波数ｆｒ１：４９８７ＭＨｚ
***振周波数ｆａ１：５１５１ＭＨｚ
弾性波共振器Ｒ２の特性
共振周波数ｆｒ２：５０２３ＭＨｚ
***振周波数ｆａ２：５２０４ＭＨｚ
共振回路１５の特性
共振周波数：４９２３ＭＨｚ
***振周波数：５１０４ＭＨｚ The simulation conditions of the filter 12 of the modification 1 of the first embodiment are as follows.
Capacitance of capacitors C1 and C2 C1: 1.05pF
C2: 1.1pF
C3: 2.4pF
Inductances of inductors L1 and L2 L1: 2.45nH
L2: 0.1nH
Characteristics of elastic wave resonator R1 Resonance frequency fr1: 4987MHz
Antiresonance frequency fa1: 5151MHz
Characteristics of elastic wave resonator R2 Resonance frequency fr2: 5023 MHz
Antiresonance frequency fa2: 5204MHz
Characteristics of resonance circuit 15 Resonance frequency: 4923 MHz
Antiresonance frequency: 5104MHz

図７は、実施例１の変形例１に係るフィルタの通過特性を示す図である。図７に示すように、弾性波共振器Ｒ１が主に形成する減衰極Ａ２と通過帯域Ｐａｓｓとの間に、共振回路１５が主に形成する減衰極Ａ３が位置している。減衰極Ａ２のボトム周波数は５２１０ＭＨｚである。急峻性は約１９．４ＭＨｚである。 FIG. 7 is a diagram showing the passing characteristics of the filter according to the first modification of the first embodiment. As shown in FIG. 7, the attenuation pole A3 mainly formed by the resonance circuit 15 is located between the attenuation pole A2 mainly formed by the elastic wave resonator R1 and the pass band Pass. The bottom frequency of the attenuation pole A2 is 5210 MHz. The steepness is about 19.4 MHz.

［実施例１の変形例２］
図８は、実施例１の変形例２に係るフィルタの回路図である。図８に示すように、実施例１の変形例２のフィルタ１３では、共振回路１５は、ノードＮ２と端子Ｔ２との間に接続され、弾性波共振器Ｒ２の一端はノードＮ２に他端は端子Ｔ２に接続されている。その他の構成は実施例１と同じある。 [Modification 2 of Example 1]
FIG. 8 is a circuit diagram of the filter according to the second modification of the first embodiment. As shown in FIG. 8, in the filter 13 of the modification 2 of the first embodiment, the resonance circuit 15 is connected between the node N2 and the terminal T2, and one end of the elastic wave resonator R2 is connected to the node N2 and the other end is connected to the node N2. It is connected to terminal T2. Other configurations are the same as those in the first embodiment.

実施例１の変形例２のフィルタ１３のシミュレーション条件は以下である。
キャパシタＣ１、Ｃ２のキャパシタンス
Ｃ１：２．１ｐＦ
Ｃ２：１．９５ｐＦ
インダクタＬ１、Ｌ２のインダクタンス
Ｌ１：１．２９ｎＨ
Ｌ２：０．１ｎＨ
弾性波共振器Ｒ１の特性
共振周波数ｆｒ１：４８６７ＭＨｚ
***振周波数ｆａ１：５０２３ＭＨｚ
弾性波共振器Ｒ２の特性
共振周波数ｆｒ２：４９６５ＭＨｚ
***振周波数ｆａ２：５１１５ＭＨｚ The simulation conditions of the filter 13 of the modification 2 of the first embodiment are as follows.
Capacitance of capacitors C1 and C2 C1: 2.1pF
C2: 1.95pF
Inductances of inductors L1 and L2 L1: 1.29nH
L2: 0.1nH
Characteristics of elastic wave resonator R1 Resonance frequency fr1: 4867MHz
Antiresonance frequency fa1: 5023MHz
Characteristics of elastic wave resonator R2 Resonance frequency fr2: 4965 MHz
Antiresonance frequency fa2: 5115MHz

図９は、実施例１の変形例２に係るフィルタの通過特性を示す図である。図９に示すように、弾性波共振器Ｒ１が主に形成する減衰極Ａ２と通過帯域Ｐａｓｓとの間に、共振回路１５が主に形成する減衰極Ａ３が位置している。減衰極Ａ２のボトム周波数５２４７ＭＨｚである。急峻性は約３０．４ＭＨｚである。 FIG. 9 is a diagram showing the passing characteristics of the filter according to the second modification of the first embodiment. As shown in FIG. 9, the attenuation pole A3 mainly formed by the resonance circuit 15 is located between the attenuation pole A2 mainly formed by the elastic wave resonator R1 and the pass band Pass. The bottom frequency of the attenuation pole A2 is 5247 MHz. The steepness is about 30.4 MHz.

実施例１およびその変形例によれば、インダクタＬ１（第１素子）は端子Ｔ１（入力端子）と端子Ｔ２（出力端子）との間に直列に接続されている。キャパシタＣ１（第２素子）は端子Ｔ１とＴ２との間にインダクタＬ１と並列に接続されている。キャパシタＣ２（第３素子）は、端子Ｔ１とＴ２との間にインダクタＬ１と並列にかつキャパシタＣ１と直列に接続されている。弾性波共振器Ｒ１（第１弾性波共振器）は、一端がキャパシタＣ１とＣ２との間のノードＮ３に接続され、他端が接地されている。共振回路１５は端子Ｔ１とＴ２との間にキャパシタＣ１およびＣ２と並列接続された弾性波共振器Ｒ２（第２弾性波共振器）を含む。これにより、通過帯域と阻止帯域との間の減衰量の急峻性を高めることができる。 According to the first embodiment and its modifications, the inductor L1 (first element) is connected in series between the terminal T1 (input terminal) and the terminal T2 (output terminal). The capacitor C1 (second element) is connected in parallel with the inductor L1 between the terminals T1 and T2. The capacitor C2 (third element) is connected between the terminals T1 and T2 in parallel with the inductor L1 and in series with the capacitor C1. One end of the elastic wave resonator R1 (first elastic wave resonator) is connected to the node N3 between the capacitors C1 and C2, and the other end is grounded. The resonance circuit 15 includes an elastic wave resonator R2 (second elastic wave resonator) connected in parallel with capacitors C1 and C2 between terminals T1 and T2. As a result, the steepness of the amount of attenuation between the pass band and the blocking band can be increased.

実施例１の図５、実施例１の変形例１の図７および実施例１の変形例２の図９のように、キャパシタＣ１、Ｃ２およびインダクタＬ１が主に形成する減衰極Ａ１（第１減衰極）は、フィルタの通過帯域Ｐａｓｓより高い。弾性波共振器Ｒ１が主に形成する減衰極Ａ２（第２減衰極）は通過帯域Ｐａｓｓと減衰極Ａ１との間に位置する。共振回路１５が主に形成する減衰極Ａ３（第３減衰極）が通過帯域Ｐａｓｓと減衰極Ａ２との間に位置する。これより、通過帯域と阻止帯域との間の減衰量の急峻性を高めることができる。 As shown in FIG. 5 of the first embodiment, FIG. 7 of the modified example 1 of the first embodiment, and FIG. 9 of the modified example 2 of the first embodiment, the attenuation pole A1 (first) mainly formed by the capacitors C1, C2 and the inductor L1. The decay electrode) is higher than the pass band Pass of the filter. The damping pole A2 (second damping pole) mainly formed by the elastic wave resonator R1 is located between the pass band Pass and the damping pole A1. The attenuation pole A3 (third attenuation pole) mainly formed by the resonance circuit 15 is located between the pass band Pass and the attenuation pole A2. As a result, the steepness of the amount of attenuation between the pass band and the blocking band can be increased.

減衰極Ａ１は通過帯域Ｐａｓｓより高く、減衰極Ａ２は通過帯域Ｐａｓｓと減衰極Ａ１との間に位置する。共振回路１５の***振周波数（実施例１およびその変形例１のとき５１０４ＭＨｚ、実施例１の変形例２のとき５１１５ＭＨｚ）は弾性波共振器Ｒ１の単体の***振周波数ｆａ１（実施例１およびその変形例１のとき５１５１ＭＨｚ、実施例１の変形例２のとき５０２３ＭＨｚ）の１．０５倍以下である。これにより、通過帯域と阻止帯域との間の減衰量の急峻性を高めることができる。共振回路１５の***振周波数はｆａ１の１．０４倍以下が好ましく、１．０２倍以下がより好ましい。 The attenuation pole A1 is higher than the passband Pass, and the attenuation pole A2 is located between the passband Pass and the attenuation pole A1. The anti-resonance frequency of the resonance circuit 15 (5104 MHz in Example 1 and its modified example 1 and 5115 MHz in modified example 2 of Example 1) is the anti-resonant frequency fa1 of the elastic wave resonator R1 alone (Example 1 and its modification). It is 1.05 times or less of 5151 MHz in the modified example 1 and 5023 MHz in the modified example 2 of the first embodiment). As a result, the steepness of the amount of attenuation between the pass band and the blocking band can be increased. The anti-resonance frequency of the resonance circuit 15 is preferably 1.04 times or less, more preferably 1.02 times or less of fa1.

実施例１およびその変形例１のように、共振回路１５がインダクタＬ１と並列接続されているとき、共振回路１５の***振周波数（５１０４ＭＨｚ）は弾性波共振器Ｒ１の単体の***振周波数ｆａ２（５１５１ＭＨｚ）より低い。これにより、通過帯域と阻止帯域との間の減衰量の急峻性を高めることができる。共振回路１５の***振周波数は弾性波共振器Ｒ１の単体の***振周波数ｆａ２の０．９９５倍以下が好ましく、０．９９倍以下がより好ましい。 When the resonance circuit 15 is connected in parallel with the inductor L1 as in the first embodiment and the first modification thereof, the anti-resonance frequency (5104 MHz) of the resonance circuit 15 is the anti-resonance frequency fa2 (5104 MHz) of the elastic wave resonator R1 alone. It is lower than 5151 MHz). As a result, the steepness of the amount of attenuation between the pass band and the blocking band can be increased. The anti-resonance frequency of the resonance circuit 15 is preferably 0.995 times or less, and more preferably 0.99 times or less, the anti-resonance frequency fa2 of the elastic wave resonator R1 alone.

弾性波共振器Ｒ１の単体の***振周波数ｆａ１および弾性波共振器Ｒ２の単体の***振周波数ｆａ２は、フィルタの通過帯域Ｐａｓｓより高く、減衰極Ａ１より低い。これにより、急峻性をより高くすることができる。***振周波数ｆａ１およびｆａ２は減衰極Ａ１の０．９９５倍以下が好ましく、０．９９倍以下がより好ましい。 The single antiresonance frequency fa1 of the elastic wave resonator R1 and the single antiresonance frequency fa2 of the elastic wave resonator R2 are higher than the pass band Pass of the filter and lower than the attenuation pole A1. Thereby, the steepness can be made higher. The anti-resonance frequencies fa1 and fa2 are preferably 0.995 times or less, more preferably 0.99 times or less of the attenuation pole A1.

弾性波共振器Ｒ１の単体の共振周波数ｆｒ１および弾性波共振器Ｒ２の単体の共振周波数ｆｒ２は、フィルタの通過帯域内に位置する。これにより、急峻性をより高くすることができる。 The single resonance frequency fr1 of the elastic wave resonator R1 and the single resonance frequency fr2 of the elastic wave resonator R2 are located within the pass band of the filter. Thereby, the steepness can be made higher.

なお、弾性波共振器Ｒ１の単体および弾性波共振器Ｒ２の単体とは、弾性波共振器Ｒ１およびＲ２以外のキャパシタおよびインダクタを含まないことを意味する。 The single elastic wave resonator R1 and the single elastic wave resonator R2 do not include capacitors and inductors other than the elastic wave resonators R1 and R2.

実施例１およびその変形例１のように、共振回路１５は弾性波共振器Ｒ２単体でもよい。実施例１の変形例２のように、共振回路１５は、弾性波共振器Ｒ２に並列にかつキャパシタＣ１およびＣ２に直列に接続されたキャパシタＣ３を備えてもよい。共振回路１５は、弾性波共振器Ｒ２を含めばよい。 As in the first embodiment and the first modification thereof, the resonant circuit 15 may be the elastic wave resonator R2 alone. As in the second modification of the first embodiment, the resonant circuit 15 may include a capacitor C3 connected in parallel with the elastic wave resonator R2 and in series with the capacitors C1 and C2. The resonance circuit 15 may include the elastic wave resonator R2.

弾性波共振器Ｒ１およびＲ２の例として圧電薄膜共振器を説明したが、弾性波共振器Ｒ１およびＲ２は弾性表面波共振器でもよい。 Although the piezoelectric thin film resonator has been described as an example of the surface acoustic wave resonators R1 and R2, the elastic wave resonators R1 and R2 may be elastic surface wave resonators.

［実施例１の変形例３］
図１０は、実施例１の変形例３に係るフィルタの回路図である。図１０に示すように、実施例１のキャパシタＣ１、Ｃ２およびインダクタＬ１の代わりにそれぞれインダクタＬ３、Ｌ４およびキャパシタＣ４が設けられている。その他の構成は実施例１と同じである。実施例１の変形例３においても急峻性を高めることができる。 [Modification 3 of Example 1]
FIG. 10 is a circuit diagram of the filter according to the third modification of the first embodiment. As shown in FIG. 10, inductors L3, L4 and capacitors C4 are provided in place of the capacitors C1, C2 and the inductor L1 of the first embodiment, respectively. Other configurations are the same as in the first embodiment. The steepness can also be increased in the modified example 3 of the first embodiment.

実施例１の変形例３のように、第１素子はキャパシタＣ４であり、第２素子および第３素子はインダクタＬ３およびＬ４でもよい。このように、第１素子はキャパシタおよびインダクタのいずれか一方であり、第２素子および第３素子はキャパシタおよびインダクタのうち第１素子と異なる他方であればよい。 As in the modified example 3 of the first embodiment, the first element may be a capacitor C4, and the second element and the third element may be inductors L3 and L4. As described above, the first element may be either a capacitor or an inductor, and the second element and the third element may be the other of the capacitors and the inductor, which is different from the first element.

図１１は、実施例２に係るダイプレクサの回路図である。図１１に示すように、共通端子ＴＡと端子ＴＨとの間にハイパスフィルタ（ＨＰＦ）１６が接続されている。共通端子ＴＡと端子ＴＬとの間にローパスフィルタ（ＬＰＦ）１８が接続されている。ＬＰＦ１８は、実施例１およびその変形例のフィルタ１１から１４である。ＨＰＦ１６は、共通端子ＴＡまたは端子ＴＨから入力された高周波信号のうち通過帯域の信号を端子ＴＨまたは共通端子ＴＡに通過させ、他の周波数の信号を抑圧する。ＬＰＦ１８は、共通端子ＴＡまたは端子ＴＬから入力された高周波信号のうち通過帯域の信号を端子ＴＬまたは共通端子ＴＡに通過させ、他の周波数の信号を抑圧する。ＨＰＦ１６の代わりにＢＰＦが接続されていてもよい。 FIG. 11 is a circuit diagram of the diplexer according to the second embodiment. As shown in FIG. 11, a high-pass filter (HPF) 16 is connected between the common terminal TA and the terminal TH. A low-pass filter (LPF) 18 is connected between the common terminal TA and the terminal TL. LPF18 is filters 11 to 14 of Example 1 and its modifications. The HPF 16 passes a passband signal among the high frequency signals input from the common terminal TA or the terminal TH to the terminal TH or the common terminal TA, and suppresses signals of other frequencies. The LPF 18 passes a passband signal among the high frequency signals input from the common terminal TA or the terminal TL to the terminal TL or the common terminal TA, and suppresses signals of other frequencies. A BPF may be connected instead of the HPF 16.

マルチプレクサとしてダイプレクサを例に説明したがトリプレクサまたはクワッドプレクサでもよい。 Although the diplexer has been described as an example as the multiplexer, a triplexer or a quadplexer may be used.

以上、本発明の実施例について詳述したが、本発明はかかる特定の実施例に限定されるものではなく、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。 Although the examples of the present invention have been described in detail above, the present invention is not limited to such specific examples, and various modifications and modifications are made within the scope of the gist of the present invention described in the claims. It can be changed.

１０−１４ フィルタ
１５ 共振回路
１６ ＨＰＦ
１８ ＬＰＦ 10-14 Filter 15 Resonant circuit 16 HPF
18 LPF

Claims (10)

入力端子と出力端子との間に直列に接続され、キャパシタおよびインダクタのいずれか一方である第１素子と、
前記入力端子と前記出力端子との間に前記第１素子と並列に接続され、キャパシタおよびインダクタのうち前記第１素子と異なる他方である第２素子と、
前記入力端子と前記出力端子との間に前記第１素子と並列にかつ前記第２素子と直列に接続され、キャパシタおよびインダクタのうち前記第１素子と異なる他方である第３素子と、
一端が前記第２素子と前記第３素子との間のノードに接続され、他端が接地された第１弾性波共振器と、
前記入力端子と前記出力端子との間において前記第２素子および前記第３素子と直列に接続された第２弾性波共振器を含む共振回路と、
を備えるフィルタ。 The first element, which is connected in series between the input terminal and the output terminal and is either a capacitor or an inductor,
A second element of a capacitor and an inductor, which is connected in parallel with the first element between the input terminal and the output terminal and is different from the first element,
A third element of a capacitor and an inductor, which is connected in parallel with the first element and in series with the second element between the input terminal and the output terminal and is different from the first element.
A first elastic wave resonator having one end connected to a node between the second element and the third element and the other end being grounded.
A resonant circuit including a second elastic wave resonator connected in series with the second element and the third element between the input terminal and the output terminal.
Filter with. 前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、
前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、
前記共振回路が主に形成する第３減衰極は前記通過帯域と前記第２減衰極との間に位置する請求項１に記載のフィルタ。 The first attenuation pole formed mainly by the first element, the second element, and the third element is higher than the pass band of the filter.
The second damping pole mainly formed by the first elastic wave resonator is located between the pass band and the first damping pole.
The filter according to claim 1, wherein the third attenuation pole mainly formed by the resonance circuit is located between the pass band and the second attenuation pole. 前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、
前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、
前記共振回路の***振周波数は前記第１弾性波共振器の単体の***振周波数の１．０５倍以下である請求項１に記載のフィルタ。 The first attenuation pole formed mainly by the first element, the second element, and the third element is higher than the pass band of the filter.
The second damping pole mainly formed by the first elastic wave resonator is located between the pass band and the first damping pole.
The filter according to claim 1, wherein the anti-resonance frequency of the resonance circuit is 1.05 times or less the anti-resonance frequency of a single unit of the first elastic wave resonator. 前記共振回路は、前記第１素子と並列接続され、
前記第１素子、前記第２素子および前記第３素子が主に形成する第１減衰極は、前記フィルタの通過帯域より高く、
前記第１弾性波共振器が主に形成する第２減衰極は前記通過帯域と前記第１減衰極との間に位置し、
前記共振回路の***振周波数は前記第１弾性波共振器の単体の***振周波数より低い請求項１に記載のフィルタ。 The resonant circuit is connected in parallel with the first element and is connected.
The first attenuation pole formed mainly by the first element, the second element, and the third element is higher than the pass band of the filter.
The second damping pole mainly formed by the first elastic wave resonator is located between the pass band and the first damping pole.
The filter according to claim 1, wherein the anti-resonance frequency of the resonance circuit is lower than the anti-resonance frequency of a single unit of the first elastic wave resonator. 前記第１素子、前記第２素子および前記第３素子が主に形成する減衰極は、前記フィルタの通過帯域より高く、
前記第１弾性波共振器の単体の***振周波数および前記第２弾性波共振器の単体の***振周波数は、前記フィルタの通過帯域より高く、前記減衰極より低い請求項１に記載のフィルタ。 The attenuation poles mainly formed by the first element, the second element, and the third element are higher than the pass band of the filter.
The filter according to claim 1, wherein the anti-resonance frequency of the first elastic wave resonator and the anti-resonance frequency of the second elastic wave resonator are higher than the pass band of the filter and lower than the attenuation pole. 前記第１弾性波共振器の単体の共振周波数および前記第２弾性波共振器の単体の共振周波数は、前記フィルタの通過帯域内に位置する請求項５に記載のフィルタ。 The filter according to claim 5, wherein the resonance frequency of the first elastic wave resonator and the resonance frequency of the second elastic wave resonator are located within the pass band of the filter. 前記共振回路は、前記第２弾性波共振器単体である請求項１から６のいずれか一項に記載のフィルタ。 The filter according to any one of claims 1 to 6, wherein the resonance circuit is a single unit of the second elastic wave resonator. 前記共振回路は、前記第２弾性波共振器に並列にかつ前記第２素子および前記第３素子に直列に接続されたキャパシタを備える請求項１から６のいずれか一項に記載のフィルタ。 The filter according to any one of claims 1 to 6, wherein the resonance circuit includes a capacitor connected in parallel with the second elastic wave resonator and in series with the second element and the third element. 前記第１素子はインダクタであり、前記第２素子および前記第３素子はキャパシタである請求項１から８のいずれか一項に記載のフィルタ。 The filter according to any one of claims 1 to 8, wherein the first element is an inductor, and the second element and the third element are capacitors. 請求項１から９のいずれか一項に記載のフィルタを含むマルチプレクサ。 A multiplexer including the filter according to any one of claims 1 to 9.
JP2019044797A 2019-03-12 2019-03-12 Filter and multiplexer Pending JP2020150363A (en)

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JP2010041141A (en) * 2008-07-31 2010-02-18 Fujitsu Ltd Filter, branching filter, and communication apparatus
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