JP2020123975A - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP2020123975A JP2020123975A JP2020074107A JP2020074107A JP2020123975A JP 2020123975 A JP2020123975 A JP 2020123975A JP 2020074107 A JP2020074107 A JP 2020074107A JP 2020074107 A JP2020074107 A JP 2020074107A JP 2020123975 A JP2020123975 A JP 2020123975A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 81
- 238000012935 Averaging Methods 0.000 claims description 3
- 238000011176 pooling Methods 0.000 abstract description 76
- 238000006243 chemical reaction Methods 0.000 abstract description 52
- 238000012545 processing Methods 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 210
- 239000004065 semiconductor Substances 0.000 description 85
- 230000006870 function Effects 0.000 description 36
- 239000011701 zinc Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 23
- 238000010586 diagram Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 18
- 229910052711 selenium Inorganic materials 0.000 description 18
- 239000011669 selenium Substances 0.000 description 18
- 238000004364 calculation method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000013528 artificial neural network Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000005304 joining Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910021389 graphene Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000013473 artificial intelligence Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 230000001151 other effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical group CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052795 boron group element Inorganic materials 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052696 pnictogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910020156 CeF Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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Abstract
Description
本実施の形態では、ニューラルネットワークのプーリング処理を効率的に行う撮像装置について、図1乃至図7を用いて説明する。
本実施の形態では、撮像装置10に用いられる光電変換素子101について、図8乃至図14を用いて説明する。
図8(A)に、上述した画素回路を有する画素の構成を例示する。図8(A)に示す画素は、層61及び層62の積層構成を有する例である。
OSトランジスタに用いる半導体材料としては、エネルギーギャップが2eV以上、好ましくは2.5eV以上、より好ましくは3eV以上である金属酸化物を用いることができる。代表的には、インジウムを含む酸化物半導体などであり、例えば、後述するCAC−OSなどを用いることができる。
図13(A)は、本発明の一態様の撮像装置の画素にカラーフィルタ等を付加した例を示す斜視図である。当該斜視図では、複数の画素の断面もあわせて図示している。光電変換素子101が形成される層61上には、絶縁層80が形成される。絶縁層80は可視光に対して透光性の高い酸化シリコン膜などを用いることができる。また、パッシベーション膜として窒化シリコン膜を積層してもよい。また、反射防止膜として、酸化ハフニウムなどの誘電体膜を積層してもよい。
以下では、イメージセンサチップを収めたパッケージ及びカメラモジュールの一例について説明する。当該イメージセンサチップには、上記撮像装置の構成を用いることができる。
本発明の一態様に係る撮像装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置又は画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図15に示す。
以上の実施の形態における各構成の説明について、以下に付記する。
各実施の形態に示す構成は、他の実施の形態に示す構成と適宜組み合わせて、本発明の一態様とすることができる。また、1つの実施の形態の中に、複数の構成例が示される場合は、互いに構成例を適宜組み合わせることが可能である。
本明細書等において、「第1」、「第2」、「第3」という序数詞は、構成要素の混同を避けるために付したものである。したがって、構成要素の数を限定するものではない。また、構成要素の順序を限定するものではない。また例えば、本明細書等の実施の形態の一において「第1」に言及された構成要素が、他の実施の形態、あるいは特許請求の範囲において「第2」に言及された構成要素とすることもありうる。また例えば、本明細書等の実施の形態の一において「第1」に言及された構成要素を、他の実施の形態、あるいは特許請求の範囲において省略することもありうる。
実施の形態について図面を参照しながら説明している。ただし、実施の形態は多くの異なる態様で実施することが可能であり、趣旨及びその範囲から逸脱することなく、その形態及び詳細を様々に変更し得ることは当業者であれば容易に理解される。したがって、本発明は、実施の形態の記載内容に限定して解釈されるものではない。なお、実施の形態の発明の構成において、同一部分又は同様な機能を有する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本明細書等において、トランジスタの接続関係を説明する際、ソースとドレインとの一方を、「ソース又はドレインの一方」(又は第1電極、又は第1端子)と表記し、ソースとドレインとの他方を「ソース又はドレインの他方」(又は第2電極、又は第2端子)と表記している。これは、トランジスタのソースとドレインは、トランジスタの構造又は動作条件等によって変わるためである。なおトランジスタのソースとドレインの呼称については、ソース(ドレイン)端子や、ソース(ドレイン)電極等、状況に応じて適切に言い換えることができる。また、本明細書等では、ゲート以外の2つの端子を第1端子、第2端子と呼ぶ場合や、第3端子、第4端子と呼ぶ場合がある。また、本明細書等に記載するトランジスタが2つ以上のゲートを有するとき(この構成をデュアルゲート構造という場合がある)、それらのゲートを第1ゲート、第2ゲートと呼ぶ場合や、フロントゲート、バックゲートと呼ぶ場合がある。特に、「フロントゲート」という語句は、単に「ゲート」という語句に互いに言い換えることができる。また、「バックゲート」という語句は、単に「ゲート」という語句に互いに言い換えることができる。なお、ボトムゲートとは、トランジスタの作製時において、チャネル形成領域よりも先に形成される端子のことをいい、「トップゲート」とは、トランジスタの作製時において、チャネル形成領域よりも後に形成される端子のことをいう。
以下では、上記実施の形態中で言及した語句の定義について説明する。
半導体の不純物とは、例えば、半導体層を構成する主成分以外をいう。例えば、濃度が0.1原子%未満の元素は不純物である。不純物が含まれることにより、例えば、半導体にDOS(Density of States)が形成されることや、キャリア移動度が低下することや、結晶性が低下することなどが起こる場合がある。半導体が酸化物半導体である場合、半導体の特性を変化させる不純物としては、例えば、第1族元素、第2族元素、第13族元素、第14族元素、第15族元素、主成分以外の遷移金属などがあり、特に、例えば、水素(水にも含まれる)、リチウム、ナトリウム、シリコン、ホウ素、リン、炭素、窒素などがある。酸化物半導体の場合、例えば水素などの不純物の混入によって酸素欠損を形成する場合がある。また、半導体がシリコン層である場合、半導体の特性を変化させる不純物としては、例えば、酸素、水素を除く第1族元素、第2族元素、第13族元素、第15族元素などがある。
本明細書において、トランジスタとは、ゲートと、ドレインと、ソースとを含む少なくとも三つの端子を有する素子である。そして、ドレイン(ドレイン端子、ドレイン領域又はドレイン電極)とソース(ソース端子、ソース領域又はソース電極)の間にチャネル形成領域を有する。ゲート−ソース間にしきい値電圧を超える電圧を与えることによって、チャネル形成領域にチャネルが形成され、ソース‐ドレイン間に電流を流すことができる。
本明細書等において、スイッチとは、導通状態(オン状態)、又は、非導通状態(オフ状態)になり、電流を流すか流さないかを制御する機能を有するものをいう。又は、スイッチとは、電流を流す経路を選択して切り替える機能を有するものをいう。
本明細書等において、XとYとが接続されている、と記載する場合は、XとYとが電気的に接続されている場合と、XとYとが機能的に接続されている場合と、XとYとが直接接続されている場合とを含むものとする。したがって、所定の接続関係、例えば、図又は文章に示された接続関係に限定されず、図又は文章に示された接続関係以外のものも含むものとする。
本明細書において、「平行」とは、二つの直線が−10°以上10°以下の角度で配置されている状態をいう。したがって、−5°以上5°以下の場合も含まれる。また、「略平行」とは、二つの直線が−30°以上30°以下の角度で配置されている状態をいう。また、「垂直」とは、二つの直線が80°以上100°以下の角度で配置されている状態をいう。したがって、85°以上95°以下の場合も含まれる。また、「略垂直」とは、二つの直線が60°以上120°以下の角度で配置されている状態をいう。
Claims (4)
- 複数の画素と、カレントミラー回路と、を有する撮像装置であって、
前記カレントミラー回路は、第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記複数の画素から得られたアナログ信号に基づいた電流が入力される配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのゲートは、前記第1のトランジスタのゲートと電気的に接続される撮像装置。 - カレントミラー回路を有する撮像装置であって、
前記カレントミラー回路には、画素部から得られたふたつのアナログ信号が入力され、
前記ふたつのアナログ信号の少なくとも一方は、複数の画素から得られたアナログ信号に基づいた電流を平均化した電流であり、
前記ふたつのアナログ信号は、同じタイミングで前記カレントミラー回路に入力される撮像装置。 - カレントミラー回路を有する撮像装置であって、
前記カレントミラー回路には、複数の画素から得られたアナログ信号に基づいた電流を平均化した電流が入力される撮像装置。 - 請求項1乃至請求項3のいずれか一において、
前記複数の画素が有するトランジスタは、nチャネル型トランジスタであり、
前記カレントミラー回路が有するトランジスタは、pチャネル型トランジスタである撮像装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019097350A1 (ja) | 2017-11-17 | 2019-05-23 | 株式会社半導体エネルギー研究所 | 加算方法、半導体装置、および電子機器 |
JP7396995B2 (ja) | 2018-10-11 | 2023-12-12 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
US11476340B2 (en) * | 2019-10-25 | 2022-10-18 | Ohio State Innovation Foundation | Dielectric heterojunction device |
US11848389B2 (en) | 2020-03-19 | 2023-12-19 | Ohio State Innovation Foundation | Low turn on and high breakdown voltage lateral diode |
DE112021002375T5 (de) * | 2020-04-17 | 2023-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Abbildungsvorrichtung und elektronisches Gerät |
CN111669527B (zh) * | 2020-07-01 | 2021-06-08 | 浙江大学 | 一种cmos图像传感器内的卷积运算电路 |
CN114497193B (zh) * | 2021-12-29 | 2024-07-09 | 红与蓝微电子(上海)有限公司 | 一种resfet器件及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005215988A (ja) * | 2004-01-29 | 2005-08-11 | Canon Inc | パターン認識用学習方法、パターン認識用学習装置、画像入力装置、コンピュータプログラム、及びコンピュータ読み取り可能な記録媒体 |
JP2010259027A (ja) * | 2009-04-28 | 2010-11-11 | Panasonic Corp | 固体撮像装置 |
JP2013146045A (ja) * | 2011-12-15 | 2013-07-25 | Canon Inc | 電子回路 |
JP2016123087A (ja) * | 2014-12-10 | 2016-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02242488A (ja) * | 1989-03-16 | 1990-09-26 | Masayoshi Umeno | 画像処理装置 |
JP2000076436A (ja) | 1998-08-31 | 2000-03-14 | Canon Inc | 画像処理装置、方法及びコンピュータ読み取り可能な記憶媒体 |
US6665012B1 (en) | 1998-09-22 | 2003-12-16 | Pixim, Inc. | Process-scalable high spatial resolution and low bit resolution CMOS area image sensor |
US7406181B2 (en) * | 2003-10-03 | 2008-07-29 | Automotive Systems Laboratory, Inc. | Occupant detection system |
WO2005114749A1 (en) * | 2004-05-21 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
FR2918746B1 (fr) * | 2007-07-13 | 2009-10-09 | Commissariat Energie Atomique | Capteur electronique a regulation thermique integree |
JP2009064162A (ja) * | 2007-09-05 | 2009-03-26 | Fuji Heavy Ind Ltd | 画像認識システム |
US8929601B2 (en) * | 2007-12-05 | 2015-01-06 | John Caulfield | Imaging detecting with automated sensing of an object or characteristic of that object |
JP5924923B2 (ja) * | 2011-12-15 | 2016-05-25 | キヤノン株式会社 | 光電変換装置、及び光電変換装置の駆動方法 |
JP5955007B2 (ja) * | 2012-02-01 | 2016-07-20 | キヤノン株式会社 | 撮像装置及び撮像方法 |
TWI536341B (zh) * | 2014-03-21 | 2016-06-01 | 緯創資通股份有限公司 | 顯示補償方法與顯示補償系統 |
WO2016149881A1 (en) * | 2015-03-20 | 2016-09-29 | Intel Corporation | Object recogntion based on boosting binary convolutional neural network features |
US9286524B1 (en) | 2015-04-15 | 2016-03-15 | Toyota Motor Engineering & Manufacturing North America, Inc. | Multi-task deep convolutional neural networks for efficient and robust traffic lane detection |
US10013772B2 (en) * | 2015-11-17 | 2018-07-03 | Beamr Imaging Ltd | Method of controlling a quality measure and system thereof |
US11475269B2 (en) | 2015-12-15 | 2022-10-18 | Analog Devices, Inc. | Convolutional neural network |
US9883121B2 (en) * | 2016-01-15 | 2018-01-30 | Cognex Corporation | Machine vision system for forming a one dimensional digital representation of a low information content scene |
EP3439288B1 (en) | 2016-03-30 | 2024-04-10 | Nikon Corporation | Feature extraction element, feature extraction system, and determination apparatus |
WO2018035507A1 (en) * | 2016-08-19 | 2018-02-22 | Linear Algebra Technologies Limited | Rendering operations using sparse volumetric data |
JP6915349B2 (ja) * | 2017-04-04 | 2021-08-04 | コニカミノルタ株式会社 | 画像処理装置、画像処理方法、及び画像処理プログラム |
CN107194559B (zh) * | 2017-05-12 | 2020-06-05 | 杭州电子科技大学 | 一种基于三维卷积神经网络的工作流识别方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005215988A (ja) * | 2004-01-29 | 2005-08-11 | Canon Inc | パターン認識用学習方法、パターン認識用学習装置、画像入力装置、コンピュータプログラム、及びコンピュータ読み取り可能な記録媒体 |
JP2010259027A (ja) * | 2009-04-28 | 2010-11-11 | Panasonic Corp | 固体撮像装置 |
JP2013146045A (ja) * | 2011-12-15 | 2013-07-25 | Canon Inc | 電子回路 |
JP2016123087A (ja) * | 2014-12-10 | 2016-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022054742A1 (ja) * | 2020-09-14 | 2022-03-17 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
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