JP2020113590A - Method for cooling hot plate and heat treatment apparatus - Google Patents

Method for cooling hot plate and heat treatment apparatus Download PDF

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JP2020113590A
JP2020113590A JP2019001571A JP2019001571A JP2020113590A JP 2020113590 A JP2020113590 A JP 2020113590A JP 2019001571 A JP2019001571 A JP 2019001571A JP 2019001571 A JP2019001571 A JP 2019001571A JP 2020113590 A JP2020113590 A JP 2020113590A
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hot plate
cooling
temperature
flow rate
regions
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JP7186096B2 (en
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優 溝部
Masaru Mizobe
優 溝部
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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Abstract

To efficiently cool a hot plate for heat-treating a substrate.SOLUTION: In a method for cooling a hot plate for heat-treating a substrate, the hot plate is divided into a plurality of regions, the temperature can be set by a heating mechanism for each of the regions, and when a cooling medium is supplied from a plurality of refrigerant supply units to the hot plate to cool the hot plate, the flow rate of the cooling medium for each of the refrigerant supply units is controlled according to the relative difference in the temperature decrease rate between the regions.SELECTED DRAWING: Figure 8

Description

本開示は、熱板の冷却方法及び加熱処理装置に関する。 The present disclosure relates to a hot plate cooling method and a heat treatment apparatus.

特許文献１には、基板を加熱処理する加熱処理装置が開示されている。加熱処理装置は、基板を加熱処理する加熱プレートと、加熱プレートの裏面に冷却ガスを供給して、加熱プレートを降温する冷却ガス供給手段とを具備する。冷却ガス供給手段は、加熱プレートの冷却速度の遅い部位から冷却速度の速い部位に向けて冷却ガスが流れるように冷却ガスを供給する。 Patent Document 1 discloses a heat treatment apparatus that heats a substrate. The heat treatment apparatus includes a heating plate that heats the substrate, and a cooling gas supply unit that supplies a cooling gas to the back surface of the heating plate to lower the temperature of the heating plate. The cooling gas supply means supplies the cooling gas such that the cooling gas flows from the portion of the heating plate having a slow cooling rate to the portion of the heating plate having a high cooling rate.

特開２００１−１８９２５０号公報JP 2001-189250 A

本開示にかかる技術は、基板を加熱処理する熱板を効率よく冷却する。 The technique according to the present disclosure efficiently cools a hot plate that heats a substrate.

本開示の一態様は、基板を加熱処理する熱板の冷却方法であって、前記熱板は複数の領域に区画され、当該領域毎に加熱機構によって温度設定可能であり、複数の冷媒供給部から前記熱板に冷却媒体を供給して当該熱板を冷却する際に、前記領域間の相対的な降温速度の違いに応じて、前記冷媒供給部毎の冷却媒体の流量制御を行う。 One aspect of the present disclosure is a method for cooling a hot plate that heat-treats a substrate, wherein the hot plate is divided into a plurality of regions, and the temperature can be set by a heating mechanism for each of the regions, and a plurality of refrigerant supply units is provided. When the cooling medium is supplied to the hot plate to cool the hot plate, the flow rate of the cooling medium is controlled for each of the refrigerant supply units according to the difference in the relative temperature decrease rate between the regions.

本開示によれば、基板を加熱処理する熱板を効率よく冷却することができる。 According to the present disclosure, a hot plate that heat-treats a substrate can be efficiently cooled.

本実施形態にかかる加熱処理装置の構成の概略を示す縦断面の説明図である。It is explanatory drawing of the vertical cross section which shows the outline of a structure of the heat processing apparatus concerning this embodiment. 熱板の構成の概略を示す平面の説明図である。It is explanatory drawing of the plane which shows the outline of a structure of a heat plate. ガスノズルの配置を示す平面の説明図である。It is explanatory drawing of the plane which shows arrangement|positioning of a gas nozzle. ガスノズルに冷却ガスを供給する機構を模式的に示す説明図である。It is explanatory drawing which shows typically the mechanism which supplies a cooling gas to a gas nozzle. 従来においてガスノズルからの冷却ガスの流量を一定にした場合の、熱板の領域の温度を経時的に示したグラフである。It is a graph which showed the temperature of the field of a hot plate over time when the flow rate of the cooling gas from a gas nozzle was made constant conventionally. 従来においてガスノズルからの冷却ガスの流量を一定にした場合の、冷却中の熱板と温度の関係を示す説明図である。It is explanatory drawing which shows the relationship between the hot plate and temperature in the case of cooling, when the flow volume of the cooling gas from a gas nozzle is made constant conventionally. 本実施形態において熱板の領域の温度を経時的に示したグラフである。It is a graph which showed the temperature of the field of a hot plate in this embodiment over time. 本実施形態において冷却中の熱板と冷却ガスの流量の関係を示す説明図である。It is explanatory drawing which shows the relationship of the hot plate in cooling and the flow volume of cooling gas in this embodiment. 他の実施形態において冷却中の熱板と冷却ガスの流量の関係を示す説明図である。It is explanatory drawing which shows the relationship of the hot plate during cooling and the flow volume of cooling gas in other embodiment. ガスノズルに冷却ガスを供給する機構を模式的に示す説明図である。It is explanatory drawing which shows typically the mechanism which supplies a cooling gas to a gas nozzle.

半導体デバイス等の製造プロセスにおけるフォトリソグラフィー工程では、各種処理が行われ、基板としての半導体ウェハ（以下、「ウェハ」という。）上に、所定のレジストパターンが形成される。各種処理とは、ウェハＷ上にレジスト液を塗布しレジスト膜を形成する処理、レジスト膜を露光する処理、露光されたレジスト膜を現像する処理、ウェハを加熱する処理等である。 In a photolithography process in a manufacturing process of semiconductor devices and the like, various processes are performed to form a predetermined resist pattern on a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate. The various processes include a process of applying a resist solution on the wafer W to form a resist film, a process of exposing the resist film, a process of developing the exposed resist film, a process of heating the wafer, and the like.

上述のウェハ加熱処理は、通常、ウェハが載置されて当該ウェハを加熱する熱板を有する加熱処理装置で行われる。加熱処理装置の熱板には、例えば、給電により発熱するヒータが内蔵されており、このヒータによる発熱により熱板は所定温度に調整されている。 The above-described wafer heat treatment is usually performed by a heat treatment apparatus having a hot plate on which a wafer is placed and which heats the wafer. The heat plate of the heat treatment apparatus has, for example, a built-in heater that generates heat by power supply, and the heat plate adjusts the heat plate to a predetermined temperature by the heat generated by the heater.

加熱処理における加熱温度は、最終的にウェハ上に形成されるレジストパターンの線幅に大きな影響を与える。そこで、加熱時のウェハ面内の温度を厳密に調整するために、上述の加熱処理装置の熱板は、複数の領域に区画され、領域毎の独立したヒータ及び温度センサが内蔵され、領域毎に温度調整されている。 The heating temperature in the heat treatment greatly affects the line width of the resist pattern finally formed on the wafer. Therefore, in order to strictly adjust the temperature in the wafer surface at the time of heating, the heat plate of the above-mentioned heat treatment apparatus is divided into a plurality of areas, and an independent heater and temperature sensor for each area are built-in. The temperature is adjusted.

また、加熱処理における加熱温度は、半導体デバイスの種類やレジスト液の種類、プロセスの種類等により異なる場合がある。そこで例えば、高温の設定温度の熱板を低温に変更する際には、当該熱板を降温させる必要がある。特許文献１に記載された加熱処理装置では、冷却ガス供給手段から熱板（加熱プレート）の裏面に冷却ガスを供給して、熱板を降温している。 Further, the heating temperature in the heat treatment may differ depending on the type of semiconductor device, the type of resist solution, the type of process, and the like. Therefore, for example, when changing a hot plate having a high set temperature to a low temperature, it is necessary to lower the temperature of the hot plate. In the heat treatment device described in Patent Document 1, the cooling gas is supplied from the cooling gas supply means to the back surface of the hot plate (heating plate) to lower the temperature of the hot plate.

ところで、熱板を冷却する際の各領域の降温速度は、例えば熱板の組み立て時の影響や、冷却ガスを供給するノズルの配置などに起因して決まる。このため、各領域の降温速度が異なる場合がある。降温速度が異なる場合、領域間の熱干渉により温度が上昇する現象、いわゆるオーバーシュートが発生する。そうするとこのオーバーシュートにより、熱板の温度整定に時間がかかる。なお、オーバーシュートの発生メカニズムについては、後述においてその詳細を説明する。 By the way, the cooling rate of each region when cooling the hot plate is determined due to, for example, the influence at the time of assembling the hot plate and the arrangement of the nozzles that supply the cooling gas. Therefore, the cooling rate of each region may be different. When the rate of temperature decrease is different, a phenomenon in which the temperature rises due to thermal interference between regions, so-called overshoot occurs. Then, due to this overshoot, it takes time to settle the temperature of the hot plate. The overshoot generation mechanism will be described in detail later.

この点、特許文献１に記載された加熱処理装置では冷却ガス供給手段によって、熱板の降温速度（冷却速度）の遅い部位から降温速度の速い部位に向けて冷却ガスが流れるように冷却ガスが供給され、これにより均一な冷却を図っている。しかしながら、予め降温速度の遅い部位と速い部位を把握していたとしても、冷却ガスの下流における気流の向きを制御するのは困難である。特に、複数のノズルから冷却ガスを供給する場合、これら冷却ガスの干渉も生じるため、熱板の各領域の降温を精度よく制御するのは困難となる。したがって、従来の熱板の冷却方法には改善の余地がある。 In this regard, in the heat treatment apparatus described in Patent Document 1, the cooling gas is supplied by the cooling gas supply means so that the cooling gas flows from a portion having a slow temperature lowering rate (cooling rate) of the hot plate toward a portion having a faster temperature lowering rate. It is supplied for uniform cooling. However, it is difficult to control the direction of the air flow in the downstream of the cooling gas even if the region where the temperature drop rate is slow and the region where the temperature drop rate is fast are known in advance. In particular, when the cooling gas is supplied from a plurality of nozzles, interference of these cooling gases also occurs, so that it is difficult to accurately control the temperature drop in each region of the hot plate. Therefore, there is room for improvement in the conventional hot plate cooling method.

以下、本実施形態にかかる加熱処理装置と、当該加熱処理装置の熱板の冷却方法について、図面を参照しながら説明する。なお、本明細書において、実質的に同一の機能構成を有する要素においては、同一の符号を付することにより重複説明を省略する。 Hereinafter, a heat treatment apparatus according to the present embodiment and a method for cooling a hot plate of the heat treatment apparatus will be described with reference to the drawings. In the present specification, elements having substantially the same functional configuration will be assigned the same reference numerals and overlapping description will be omitted.

＜加熱処理装置＞
図１は、本実施形態にかかる加熱処理装置１の構成の概略を示す縦断面の説明図である。加熱処理装置１は、図１に示すようにウェハＷを内部に収容する筐体１０を有している。筐体１０の一側面には、ウェハＷを搬入出するための搬入出口１１が形成されている。 <Heat treatment equipment>
FIG. 1 is an explanatory view of a vertical cross section showing the outline of the configuration of the heat treatment apparatus 1 according to the present embodiment. The heat treatment apparatus 1 has a housing 10 that accommodates the wafer W therein, as shown in FIG. A loading/unloading port 11 for loading/unloading the wafer W is formed on one side surface of the housing 10.

筐体１０の内部には、上側に位置して上下動自在な蓋体２０と、下側に位置してその蓋体２０と一体となって処理室Ｓを形成する熱板収容部２１が設けられている。 Inside the housing 10, there are provided a lid 20 that is located on the upper side and is movable up and down, and a hot plate accommodating portion 21 that is located on the lower side and forms a processing chamber S integrally with the lid 20. Has been.

蓋体２０は、下面が開口した略筒形状を有している。蓋体２０の上面中央部には、排気部２０ａが設けられている。処理室Ｓ内の雰囲気は、排気部２０ａから排気される。 The lid 20 has a substantially cylindrical shape with an open lower surface. An exhaust portion 20a is provided in the center of the upper surface of the lid body 20. The atmosphere in the processing chamber S is exhausted from the exhaust unit 20a.

熱板収容部２１は、外周の略円筒状の外側ケース２２と、外側ケース２２内に配置された略円筒状の内側ケース２３と、内側ケース２３の下面を覆う底板２４と、内側ケース２３内に固着され断熱性を備えたサポートリング２５と、を有している。なお、底板２４には、多数の通気孔（図示せず）が形成されている。 The hot plate accommodating portion 21 includes a substantially cylindrical outer case 22 having an outer periphery, a substantially cylindrical inner case 23 arranged in the outer case 22, a bottom plate 24 covering a lower surface of the inner case 23, and an inner case 23. And a support ring 25 having heat insulating properties. It should be noted that the bottom plate 24 has a large number of ventilation holes (not shown).

サポートリング２５には、ウェハＷが載置され当該ウェハＷを加熱する熱板３０が設けられている。熱板３０は、厚みのある略円盤形状を有している。 The support ring 25 is provided with a hot plate 30 on which the wafer W is placed and which heats the wafer W. The heat plate 30 has a substantially disk shape with a large thickness.

図２に示すように熱板３０は、複数、例えば７つの領域Ｒ１〜Ｒ７に区画されている。領域Ｒ１は、平面視において熱板３０の中央部に設けられた円形の領域である。領域Ｒ２〜Ｒ３は、平面視において領域Ｒ１の外側にある環状領域を２等分した円弧状の領域である。領域Ｒ４〜Ｒ７は、平面視において領域Ｒ２〜Ｒ３のさらに外側にある環状領域（外周領域）を周方向に４等分した円弧状の領域である。以下の説明においては、領域Ｒ１を第１領域といい、領域Ｒ２〜Ｒ３の環状領域を第２領域といい、領域Ｒ４〜Ｒ７の環状領域を第３領域という。そしてこれら第１領域、第２領域、第３領域はそれぞれ、熱板３０と同心円状に配置されている。なお、熱板３０において区画される領域の数や配置は本実施形態に限定されず、任意に設定できる。 As shown in FIG. 2, the hot plate 30 is divided into a plurality of, for example, seven regions R 1 to R 7 . The region R 1 is a circular region provided in the central portion of the heat plate 30 in plan view. Regions R 2 to R 3 are arc-shaped regions that divide the annular region outside the region R 1 into two equal parts in plan view. The regions R 4 to R 7 are arc-shaped regions obtained by dividing an annular region (outer peripheral region) further outside the regions R 2 to R 3 in a plan view into four equal parts in the circumferential direction. In the following description, the region R 1 is referred to as the first region, the annular regions of the regions R 2 to R 3 are referred to as the second region, and the annular regions of the regions R 4 to R 7 are referred to as the third region. And these 1st area|region, 2nd area|region, and 3rd area|region are arrange|positioned concentrically with the heating plate 30, respectively. Note that the number and arrangement of the regions divided in the heat plate 30 are not limited to those in this embodiment, and can be set arbitrarily.

熱板３０の各領域Ｒ１〜Ｒ７には、加熱機構としてのヒータ３１が個別に内蔵されている。ヒータ３１は例えば電気ヒータであり、各領域Ｒ１〜Ｒ７を個別に加熱できる。また、各領域Ｒ１〜Ｒ７には、温度センサ３２が個別に設けられている。温度センサ３２は、当該温度センサ３２が設けられた領域Ｒ１〜Ｒ７の温度を個別に測定する。各領域Ｒ１〜Ｒ７のヒータ３１の発熱量は、例えば後述する制御部６０により、領域Ｒ１〜Ｒ７毎に、それぞれの温度センサ３２で測定される温度が設定温度となるように調整される。 A heater 31 as a heating mechanism is individually built in each of the regions R 1 to R 7 of the heating plate 30. The heater 31 is, for example, an electric heater and can individually heat each of the regions R 1 to R 7 . A temperature sensor 32 is individually provided in each of the regions R 1 to R 7 . The temperature sensor 32 individually measures the temperatures of the regions R 1 to R 7 in which the temperature sensor 32 is provided. The heat generation amount of the heater 31 in each of the regions R 1 to R 7 is adjusted by, for example, the control unit 60 described later such that the temperature measured by each of the temperature sensors 32 becomes the set temperature for each of the regions R 1 to R 7. To be done.

図１に示すように熱板３０の下方であって底板２４上には、冷媒供給部としてのガスノズルＮが複数設けられている。ガスノズルＮは、熱板３０の裏面に向けて、冷却媒体としての冷却ガスを供給する。冷却ガスには、例えば常温のエアが用いられる。なお、ガスノズルＮから熱板３０に供給された冷却ガスは、底板２４の通気孔（図示せず）を介して、筐体１０の外部に排出される。 As shown in FIG. 1, below the heating plate 30 and on the bottom plate 24, a plurality of gas nozzles N as a coolant supply unit are provided. The gas nozzle N supplies a cooling gas as a cooling medium toward the back surface of the hot plate 30. Air at room temperature is used as the cooling gas, for example. The cooling gas supplied from the gas nozzle N to the hot plate 30 is discharged to the outside of the housing 10 via the ventilation holes (not shown) of the bottom plate 24.

図３に示すようにガスノズルＮは、複数、例えば７つ設けられている。７つのガスノズルＮ１〜Ｎ７はそれぞれ、例えば、熱板３０の領域Ｒ１〜Ｒ７に対応するように配置されている。なお、各ガスノズルＮ１〜Ｎ７は、平面視において温度センサ３２と重ならない位置に配置されていてもよい。また、ガスノズルＮ１〜Ｎ７の数や配置は本実施形態に限定されず、任意に設定できる。 As shown in FIG. 3, a plurality of gas nozzles N, for example, seven are provided. The seven gas nozzles N 1 to N 7 are arranged so as to correspond to the regions R 1 to R 7 of the hot plate 30, respectively, for example. The gas nozzles N 1 to N 7 may be arranged at positions that do not overlap the temperature sensor 32 in plan view. Further, the number and arrangement of the gas nozzles N 1 to N 7 are not limited to those in this embodiment and can be set arbitrarily.

図１及び図４に示すように複数のガスノズルＮ１〜Ｎ７には、ガス供給管４０が接続されている。ガス供給管４０は、ガスノズルＮ１〜Ｎ７に冷却ガスを供給するガス供給源４１に連通している。またガス供給管４０には、ガス供給源４１からの冷却ガスを各ガスノズルＮ１〜Ｎ７に分岐させるための分岐部４２が設けられている。すなわち、ガス供給源４１に接続されたガス供給管４０ａは、分岐部４２でガス供給管４０ｂに分岐され、各ガスノズルＮ１〜Ｎ７に接続される。分岐部４２の内部において、ガス供給管４０ａとガス供給管４０ｂのそれぞれの分岐点には、オリフィス４３が設けられている。そして各オリフィス４３の径を調整することで、各ガスノズルＮ１〜Ｎ７に供給する冷却ガスの流量を個別に制御することができる。 As shown in FIGS. 1 and 4, a gas supply pipe 40 is connected to the plurality of gas nozzles N 1 to N 7 . The gas supply pipe 40 communicates with a gas supply source 41 that supplies cooling gas to the gas nozzles N 1 to N 7 . Further, the gas supply pipe 40 is provided with a branch portion 42 for branching the cooling gas from the gas supply source 41 to each of the gas nozzles N 1 to N 7 . That is, the gas supply pipe 40a connected to a gas supply source 41 is branched into the gas supply pipe 40b at a branch portion 42 is connected to each of the gas nozzles N 1 to N 7. Inside the branch portion 42, an orifice 43 is provided at each branch point of the gas supply pipe 40a and the gas supply pipe 40b. Then, by adjusting the diameter of each orifice 43, the flow rate of the cooling gas supplied to each of the gas nozzles N 1 to N 7 can be individually controlled.

図１に示すように熱板収容部２１には、ウェハＷを下方から支持し昇降させるための昇降ピン５０が、例えば３本設けられている。昇降ピン５０は、底板２４の下方に設けられた、シリンダ等の駆動部５１により昇降自在である。そして昇降ピン５０は、底板２４の貫通孔２４ａと熱板３０に形成された貫通孔３０ａを挿通し、熱板３０の下方から上方に突出できる。 As shown in FIG. 1, the hot plate accommodating portion 21 is provided with, for example, three elevating pins 50 for supporting and elevating the wafer W from below. The lift pins 50 can be lifted and lowered by a drive unit 51 such as a cylinder provided below the bottom plate 24. The elevating pin 50 can be inserted through the through hole 24a of the bottom plate 24 and the through hole 30a formed in the heat plate 30 and can protrude upward from below the heat plate 30.

加熱処理装置１には、制御部６０が設けられている。制御部６０は、例えばＣＰＵやメモリ等を備えたコンピュータにより構成され、プログラム格納部（図示せず）を有している。プログラム格納部には、加熱処理装置１における処理の制御するプログラムが格納されている。なお、上記プログラムは、コンピュータに読み取り可能な記憶媒体Ｈに記録されていたものであって、当該記憶媒体Ｈから制御部６０にインストールされたものであってもよい。 The heat treatment device 1 is provided with a control unit 60. The control unit 60 is composed of a computer including, for example, a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing in the heat treatment apparatus 1. The program may be recorded in a computer-readable storage medium H and may be installed in the control unit 60 from the storage medium H.

以上の加熱処理装置１で行われる加熱処理において、筐体１０内に搬入されたウェハＷは昇降ピン５０に受け渡されて、熱板３０に載置される。熱板３０は所定の設定温度に加熱されており、当該熱板によりウェハＷは加熱処理される。 In the heat treatment performed by the heat treatment apparatus 1 described above, the wafer W carried into the housing 10 is transferred to the elevating pins 50 and placed on the hot plate 30. The hot plate 30 is heated to a predetermined set temperature, and the wafer W is heat-treated by the hot plate.

ここで、熱板３０の設定温度は、上述したように半導体デバイスの種類やレジスト液の種類、プロセスの種類等により異なる場合がある。かかる場合、ウェハＷの加熱処理に先だって、熱板３０を設定温度に調整する必要がある。例えば、高温の設定温度の熱板３０を低温の設定温度に変更する際には、当該熱板３０を降温させる必要があるが、かかる場合、オーバーシュートが発生する場合がある。そこで、本発明者らはオーバーシュートの発生メカニズムを明らかにし、その対応策を見出すに至った。 Here, the set temperature of the heating plate 30 may differ depending on the type of semiconductor device, the type of resist solution, the type of process, etc., as described above. In such a case, it is necessary to adjust the temperature of the heating plate 30 to the set temperature prior to the heat treatment of the wafer W. For example, when changing the hot plate 30 having a high set temperature to a low set temperature, it is necessary to lower the temperature of the hot plate 30, but in such a case, overshoot may occur. Therefore, the present inventors have clarified the mechanism of occurrence of overshoot and found a countermeasure against it.

＜オーバーシュートの発生メカニズム＞
先ず、オーバーシュートの発生メカニズムについて、加熱処理装置１を対象として説明する。具体的には、高温の熱板３０に対して複数のガスノズルＮ１〜Ｎ７から冷却ガスを供給して、当該熱板３０を設定温度Ｔ０にまで冷却する。この際、各ガスノズルＮ１〜Ｎ７から供給される冷却ガスの流量は同じとする。なお、熱板３０の目標冷却温度は設定温度Ｔ０であるが、数℃程度の整定幅ΔＴがある。そこで、各領域Ｒ１〜Ｒ７は、目標温度範囲Ｔ１〜Ｔ２の間に制定されればよいものとする。温度Ｔ１は設定温度Ｔ０に整定幅ΔＴを加えたものであり（Ｔ１＝Ｔ０＋ΔＴ）、温度Ｔ２は設定温度Ｔ０から整定幅ΔＴを引いたものである（Ｔ２＝Ｔ０−ΔＴ）。 <Mechanism of occurrence of overshoot>
First, the mechanism of overshoot generation will be described for the heat treatment apparatus 1. Specifically, the cooling gas is supplied to the hot plate 30 having a high temperature from a plurality of gas nozzles N 1 to N 7 to cool the hot plate 30 to the set temperature T0. At this time, the flow rate of the cooling gas supplied from each of the gas nozzles N 1 to N 7 is the same. The target cooling temperature of the heating plate 30 is the set temperature T0, but there is a settling width ΔT of about several degrees Celsius. Therefore, each region R 1 to R 7 may be established between the target temperature ranges T1 and T2. The temperature T1 is the set temperature T0 plus the settling width ΔT (T1=T0+ΔT), and the temperature T2 is the set temperature T0 minus the settling width ΔT (T2=T0−ΔT).

以上のように熱板３０を冷却し、温度センサ３２にて温度を測定した結果を、図５及び図６に示す。図５は、熱板３０の各領域の温度を経時的に示したグラフである。図６は、冷却中の熱板３０と温度の関係を示す説明図である。上述したように熱板３０を冷却する際の各領域Ｒ１〜Ｒ７の降温速度は、例えば熱板３０の組み立て時の影響などに起因して異なる場合がある。ここでは、降温速度の順が、第２領域、第１領域、第３領域である場合について説明する。さらに詳細には、図５に示すように第２領域における領域Ｒ２の降温速度が最も速く、第３領域における領域Ｒ７の降温速度が最も遅い。なお、図５においては図示の煩雑さを避けるため、他の領域Ｒ１、Ｒ３〜Ｒ６のグラフを省略するが、これら領域Ｒ１、Ｒ３〜Ｒ６のグラフは、領域Ｒ２のグラフと領域Ｒ７のグラフの間に入る。 The results of cooling the hot plate 30 as described above and measuring the temperature with the temperature sensor 32 are shown in FIGS. 5 and 6. FIG. 5 is a graph showing the temperature of each region of the heating plate 30 over time. FIG. 6 is an explanatory diagram showing the relationship between the hot plate 30 and the temperature during cooling. As described above, the cooling rates of the regions R 1 to R 7 when cooling the hot plate 30 may be different due to, for example, the influence at the time of assembling the hot plate 30. Here, a case will be described where the order of the cooling rates is the second region, the first region, and the third region. More specifically, as shown in FIG. 5, the cooling rate of the region R 2 in the second region is the highest, and the cooling rate of the region R 7 in the third region is the slowest. In addition, in FIG. 5, graphs of the other regions R 1 and R 3 to R 6 are omitted in order to avoid complexity of the drawing, but the graphs of these regions R 1 and R 3 to R 6 are shown in the region R 2 . Enter between the graph and the graph of region R 7 .

熱板３０に対してすべてのガスノズルＮ１〜Ｎ７から冷却ガスを供給すると、領域Ｒ１〜Ｒ７のうち、図５に示すように領域Ｒ２が最初に温度Ｔ１に到達する。この際、図６（ａ）に示すように領域Ｒ２を含む第２領域の温度が、他の第１領域と第３領域の温度よりも高くなり、第２領域に対して第１領域と第３領域から熱が流れる（図６（ａ）中のブロック矢印）。しかも、第３領域は熱が外部に放出されるが、第２領域では熱が放出されにくい。このように第２領域で熱干渉が生じるため、図５に示した時間ｔ１において、領域Ｒ２の温度が上昇する。この温度上昇がオーバーシュートである。 When supplying cooling gas from all of the gas nozzle N 1 to N 7 against the hot plate 30, in the region R 1 to R 7, a region R 2 as shown in FIG. 5 reaches the first temperature T1. At this time, as shown in FIG. 6A, the temperature of the second region including the region R 2 becomes higher than the temperatures of the other first region and the third region, so that the second region becomes the first region. Heat flows from the third region (block arrow in FIG. 6A). Moreover, heat is released to the outside in the third region, but it is difficult to release heat in the second region. Since thermal interference occurs in the second region in this manner, the temperature of the region R 2 rises at time t1 shown in FIG. This temperature rise is an overshoot.

続いて、熱板３０に対してすべてのガスノズルＮ１〜Ｎ７からの冷却ガスを継続し、図５に示すように領域Ｒ１〜Ｒ７のうち、領域Ｒ７が最後に温度Ｔ１に到達する（時間ｔ２）。この時間ｔ２において、すべてのガスノズルＮ１〜Ｎ７からの冷却ガスの供給を停止する。そうすると、図６（ｂ）に示すように領域Ｒ７を含む第３領域では温度が低くなるが、領域Ｒ２を含む第２領域では温度が高いままとなる。 Subsequently, continuing the cooling gas from all of the gas nozzle N 1 to N 7 against the hot plate 30, in the region R 1 to R 7 as shown in FIG. 5, the region R 7 reaches the end temperature T1 (Time t2). At this time t2, the supply of the cooling gas from all the gas nozzles N 1 to N 7 is stopped. Then, as shown in FIG. 6B, the temperature decreases in the third region including the region R 7 , but the temperature remains high in the second region including the region R 2 .

なお、この時間ｔ２において領域Ｒ２では、ガスノズルＮ１〜Ｎ７からの冷却ガスの供給が停止されるため、ヒータ３１による加熱により、さらに温度が上昇することになる。このため、オーバーシュートの時間が長くなる。 Incidentally, in the region R 2 at this time t2, the supply of the cooling gas from the nozzle N 1 to N 7 is stopped, the heating by the heater 31, so that further temperature increases. Therefore, the overshoot time becomes long.

その後、ガスノズルＮ１〜Ｎ７からの冷却ガスの供給を停止し、所定時間が経過すると、領域Ｒ２の温度が温度Ｔ１に到達し、整定される（時間ｔ３）。ここで、仮にオーバーシュートが無ければ、時間ｔ２において、すべての領域Ｒ１〜Ｒ７の温度がＴ１〜Ｔ２になって整定されていたはずである。したがって、時間ｔ２から時間ｔ３までの時間（ｔ３−ｔ２）、例えば１０秒間は、オーバーシュートに起因する無駄な時間であるといえる。 After that, when the supply of the cooling gas from the gas nozzles N 1 to N 7 is stopped and a predetermined time elapses, the temperature of the region R 2 reaches the temperature T1 and is settled (time t3). Here, if there is no overshoot, the temperatures of all the regions R 1 to R 7 should have been set to T1 to T2 at time t2. Therefore, it can be said that the time from the time t2 to the time t3 (t3-t2), for example, 10 seconds is a wasteful time due to the overshoot.

＜熱板の冷却方法＞
そこで本実施形態では、このオーバーシュートを抑制するため、領域Ｒ１〜Ｒ７間の相対的な降温速度の違いに応じて、ガスノズルＮ１〜Ｎ７からの冷却ガスの流量を制御する。なお、その他の冷却条件は、図５及び図６に示した場合と同様である。すなわち、本実施形態における熱板３０の設定温度はＴ０であり、整定幅ΔＴを加味して、目標温度範囲はＴ１〜Ｔ２である。また、熱板３０における降温速度の順は、第２領域、第１領域、第３領域であり、さらに第２領域における領域Ｒ２の降温速度が最も速く、第３領域における領域Ｒ７の降温速度が最も遅い。 <Hot plate cooling method>
Therefore, in the present embodiment, in order to suppress this overshoot, the flow rate of the cooling gas from the gas nozzles N 1 to N 7 is controlled according to the difference in the relative temperature decrease rate between the regions R 1 to R 7 . The other cooling conditions are the same as those shown in FIGS. 5 and 6. That is, the set temperature of the hot plate 30 in the present embodiment is T0, and the target temperature range is T1 to T2 in consideration of the settling width ΔT. Further, the order of the cooling rate of the hot plate 30 is the second region, the first region, and the third region, and the cooling rate of the region R 2 in the second region is the highest, and the cooling rate of the region R 7 in the third region is the highest. The slowest speed.

以上のように熱板３０を冷却し、温度センサ３２にて温度を測定した結果を、図７及び図８に示す。図７は、熱板３０の各領域の温度を経時的に示したグラフである。図８は、冷却中の熱板３０と冷却ガスの流量の関係、及び熱板３０と温度の関係を示す説明図である。なお、図７においては図示の煩雑さを避けるため、領域Ｒ２、Ｒ７のみ図示し、他の領域Ｒ１、Ｒ３〜Ｒ６のグラフを省略する。 The results of cooling the hot plate 30 and measuring the temperature with the temperature sensor 32 as described above are shown in FIGS. 7 and 8. FIG. 7 is a graph showing the temperature of each region of the heating plate 30 over time. FIG. 8 is an explanatory diagram showing the relationship between the hot plate 30 during cooling and the flow rate of the cooling gas, and the relationship between the hot plate 30 and the temperature. In addition, in FIG. 7, in order to avoid complexity of illustration, only the regions R 2 and R 7 are illustrated, and graphs of the other regions R 1 and R 3 to R 6 are omitted.

本実施形態の冷却ガスの流量制御では、複数のガスノズルＮ１〜Ｎ７からの冷却ガスの総流量は一定である。かかる状況下で、複数のガスノズルＮ１〜Ｎ７からの冷却ガスの流量バランスを制御する。具体的には、図８（ａ）に示すように降温速度が速い第２領域（領域Ｒ２〜Ｒ３）に対してガスノズルＮ２〜Ｎ３から供給される冷却ガスの流量を少なくし、特にガスノズルＮ２から領域Ｒ２に供給される冷却ガスの流量を少なくする。一方、降温速度が遅い第３領域（領域Ｒ３〜Ｒ７）に対してガスノズルＮ３〜Ｎ７から供給される冷却ガスの流量を多くし、特にガスノズルＮ７から領域Ｒ７に供給される冷却ガスの流量を多くする。降温速度が中間の第１領域（領域Ｒ１）に供給される冷却ガスの流量は、第２領域と第３領域の中間とする。 In the flow rate control of the cooling gas of this embodiment, the total flow rate of the cooling gas from the plurality of gas nozzles N 1 to N 7 is constant. Under such a condition, the flow rate balance of the cooling gas from the plurality of gas nozzles N 1 to N 7 is controlled. Specifically, as shown in FIG. 8A, the flow rate of the cooling gas supplied from the gas nozzles N 2 to N 3 is reduced with respect to the second region (regions R 2 to R 3 ) in which the cooling rate is high, In particular, the flow rate of the cooling gas supplied from the gas nozzle N 2 to the region R 2 is reduced. On the other hand, by increasing the flow rate of the cooling gas supplied from the gas nozzle N 3 to N 7 with respect to the third area cooling rate is slow (region R 3 to R 7), in particular supplied from the gas nozzle N 7 in the region R 7 Increase the flow rate of the cooling gas. The flow rate of the cooling gas supplied to the first region (region R 1 ) having the intermediate temperature decreasing rate is between the second region and the third region.

なお、ガスノズルＮ３〜Ｎ７からの冷却ガスの流量制御は、図４に示した分岐部４２のオリフィス４３の径を調整することで行われる。本実施形態のように、領域Ｒ１〜Ｒ７の降温速度の傾向が予め分かっている場合には、これに合わせて、オリフィス４３の径を調整することができる。具体的には、ガスノズルＮ２に対応するオリフィス４３の径を小さくし、ガスノズルＮ７に対応するオリフィス４３の径を大きくすればよい。なお、領域Ｒ１〜Ｒ７の降温速度の傾向を把握するタイミングは任意であるが、例えば、加熱処理装置１の立ち上げ時に試運転を行う際や、加熱処理装置１の出荷前に最終検査を行う際などが挙げられる。 The flow rate control of the cooling gas from the gas nozzle N 3 to N 7 is carried out by adjusting the diameter of the orifice 43 of the branch portion 42 shown in FIG. When the tendency of the cooling rate of the regions R 1 to R 7 is known in advance as in the present embodiment, the diameter of the orifice 43 can be adjusted in accordance with this. Specifically, the diameter of the orifice 43 corresponding to the gas nozzle N 2 may be reduced, and the diameter of the orifice 43 corresponding to the gas nozzle N 7 may be increased. Although the timing of grasping the tendency of the temperature decrease rate in the regions R 1 to R 7 is arbitrary, for example, a final inspection may be performed when the test operation is performed when the heat treatment apparatus 1 is started up or before the heat treatment apparatus 1 is shipped. For example, when performing.

以上のように流量制御された冷却ガスによって熱板３０を冷却すると、降温速度が速い第２領域（特に領域Ｒ２）の降温速度を遅らせることができ、降温速度の遅い第３領域（特に領域Ｒ７）の降温速度を速めることができる。したがって、図７に示すように領域Ｒ２が温度Ｔ１に到達する時間ｔ４と、領域Ｒ７が温度Ｔ１に到達する時間ｔ５との時間差が小さくなる。 When the hot plate 30 is cooled by the cooling gas whose flow rate is controlled as described above, it is possible to delay the temperature lowering rate of the second region where the temperature lowering rate is fast (particularly the region R 2 ) and the third region where the temperature lowering rate is slower (particularly the region). The temperature lowering rate of R 7 ) can be increased. Therefore, the time t4 the area R 2 reaches the temperature T1 as shown in FIG. 7, the time difference between the time t5 the area R 7 reaches the temperature T1 becomes smaller.

また、図８（ｂ）に示すように各領域Ｒ１〜Ｒ７の温度差が小さくなるので、熱干渉を抑制することができ、オーバーシュートの発生を抑制することができる。したがって、以上の実施形態によれば、各領域Ｒ１〜Ｒ７の温度制定時間が短くでき、熱板３０の冷却を短時間で行うことができる。そしてこのように加熱処理装置１の立ち上げが短時間になるので、すぐにウェハＷの加熱処理を行うことができ、その結果ウェハ処理のスループットを向上させることができる。 Further, as shown in FIG. 8B, since the temperature difference between the regions R 1 to R 7 is small, it is possible to suppress thermal interference and suppress the occurrence of overshoot. Therefore, according to the above embodiment, the temperature settling time of each region R 1 to R 7 can be short, it can be performed in a short time the cooling of the hot plate 30. Since the start-up of the heat treatment apparatus 1 is short in this way, the heat treatment of the wafer W can be performed immediately, and as a result, the throughput of wafer treatment can be improved.

なお、以上の実施形態において冷却ガスの流量制御を行う際、図９（ａ）に示すように第１領域（領域Ｒ１）、第２領域（領域Ｒ２〜Ｒ３）、第３領域（領域Ｒ４〜Ｒ７）の順に熱が流れるようにしてもよい（図９（ａ）中のブロック矢印）。具体的には、第１領域に対してガスノズルＮ１から供給される冷却ガスの流量を少なくし、第３領域に対してガスノズルＮ３〜Ｎ７から供給される冷却ガスの流量を多くする。かかる場合、熱板３０において内側から外側の一方向に熱が流れるので、熱干渉によるオーバーシュートの発生を抑制することができる。また、図９（ｂ）に示すように各領域Ｒ１〜Ｒ７の温度差を小さくすることもできる。したがって、熱板３０の温度整定を短時間で行うことができる。 In addition, when controlling the flow rate of the cooling gas in the above embodiment, as shown in FIG. 9A, the first region (region R 1 ), the second region (regions R 2 to R 3 ), the third region ( Heat may flow in the order of the regions R 4 to R 7 (block arrow in FIG. 9A). Specifically, the flow rate of the cooling gas supplied from the gas nozzle N 1 is reduced to the first area, and the flow rate of the cooling gas supplied from the gas nozzles N 3 to N 7 is increased to the third area. In this case, heat flows in one direction from the inner side to the outer side of the heating plate 30, so that the occurrence of overshoot due to thermal interference can be suppressed. Further, as shown in FIG. 9B, the temperature difference between the regions R 1 to R 7 can be reduced. Therefore, the temperature of the heating plate 30 can be settled in a short time.

＜他の実施形態＞
以上の実施形態の加熱処理装置１では、予め領域Ｒ１〜Ｒ７の降温速度の傾向が分かっており、この傾向に合わせて、分岐部４２のオリフィス４３の径を調整していたが、ガスノズルＮ１〜Ｎ７からの冷却ガスの流量を制御する方法は、これに限定されない。例えば分岐部４２に代えて、図１０に示すように電磁弁１００を設けてもよい。電磁弁１００は、ガスノズルＮ１〜Ｎ７にそれぞれ設けられ、当該ガスノズルＮ１〜Ｎ７の開口を個別に調整する。 <Other Embodiments>
In the heat treatment apparatus 1 of the above embodiment, the tendency of the temperature lowering rate of the regions R 1 to R 7 is known in advance, and the diameter of the orifice 43 of the branch portion 42 is adjusted according to this tendency. The method of controlling the flow rate of the cooling gas from N 1 to N 7 is not limited to this. For example, instead of the branch portion 42, a solenoid valve 100 may be provided as shown in FIG. Solenoid valve 100 is provided on each of the gas nozzles N 1 to N 7, to adjust the opening of the gas nozzles N 1 to N 7 individually.

熱板３０を冷却ガスで冷却する際、当該熱板３０の各領域Ｒ１〜Ｒ７では、温度センサ３２によって温度が個別に測定されている。そこで、この温度センサ３２による各領域Ｒ１〜Ｒ７の温度測定結果に基づき、電磁弁１００を用いて、ガスノズルＮ１〜Ｎ７からの冷却ガスの流量を個別にリアルタイム制御してもよい。具体的には、温度センサ３２で測定された温度と、予め降温速度から想定した温度と差に応じて、冷却ガスの流量を制御する。かかる場合、冷却ガスの流量制御をより精密に行うことができる。 When cooling the hot plate 30 with the cooling gas, the temperature is measured individually by the temperature sensor 32 in each of the regions R 1 to R 7 of the hot plate 30. Therefore, the flow rate of the cooling gas from the gas nozzles N 1 to N 7 may be individually controlled in real time using the solenoid valve 100 based on the temperature measurement result of each of the regions R 1 to R 7 by the temperature sensor 32. Specifically, the flow rate of the cooling gas is controlled according to the difference between the temperature measured by the temperature sensor 32 and the temperature assumed in advance from the cooling rate. In such a case, the flow rate of the cooling gas can be controlled more precisely.

以上の実施形態の加熱処理装置１では、冷却ガスの流量制御において、ガスノズルＮ１〜Ｎ７からの冷却ガスの総流量を一定としていたが、当該総流量を経時的に変化させてもよい。具体的には、例えば、熱板３０の冷却工程の前半では冷却ガスの総流量を多くして熱板３０を急速に冷却し、後半では冷却ガスの総流量を少なくして熱板３０を緩やかに冷却してもよい。かかる場合、熱板３０の冷却に使用される冷却ガスの全体の量を軽減することができる。 In the heating treatment apparatus 1 of the above embodiment, the flow control of the cooling gas, although the total flow rate of the cooling gas from the nozzle N 1 to N 7 has been constant, may be time varying the total flow rate. Specifically, for example, in the first half of the step of cooling the hot plate 30, the total flow rate of the cooling gas is increased to rapidly cool the hot plate 30, and in the latter half, the total flow rate of the cooling gas is decreased to loosen the hot plate 30. You may cool to. In such a case, the total amount of cooling gas used for cooling the hot plate 30 can be reduced.

以上の実施形態の加熱処理装置１では、すべての領域Ｒ１〜Ｒ７が温度Ｔ１に到達した際にガスノズルＮ１〜Ｎ７からの冷却ガスの供給を停止したが、各ガスノズルＮ１〜Ｎ７の停止タイミングを個別に制御してもよい。かかる場合、各領域Ｒ１〜Ｒ７の温度制御をより精密に行うことができる。 In the heating treatment apparatus 1 of the above embodiment, the entire region R 1 to R 7 stops the supply of the cooling gas from the nozzle N 1 to N 7 upon reaching the temperature T1, the gas nozzles N 1 to N The stop timing of 7 may be controlled individually. In such a case, the temperature control of each region R 1 to R 7 can be performed more precisely.

以上の実施形態の加熱処理装置１では、熱板３０に冷却ガスを供給して当該熱板３０を冷却したが、冷却媒体はこれに限定されない。例えば冷却媒体として、ミストを含むガスを用いてもよいし、あるいは冷却水を用いてもよい。 In the heat treatment apparatus 1 of the above embodiment, the cooling gas is supplied to the hot plate 30 to cool the hot plate 30, but the cooling medium is not limited to this. For example, a gas containing mist may be used as the cooling medium, or cooling water may be used.

今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

なお、以下のような構成も本開示の技術的範囲に属する。
（１）基板を加熱処理する熱板の冷却方法であって、
前記熱板は複数の領域に区画され、当該領域毎に加熱機構によって温度設定可能であり、
複数の冷媒供給部から前記熱板に冷却媒体を供給して当該熱板を冷却する際に、前記領域間の相対的な降温速度の違いに応じて、前記冷媒供給部毎の冷却媒体の流量制御を行う、熱板の冷却方法。
前記（１）では、領域間の相対的な降温速度の違いに応じて、冷媒供給部毎の冷却媒体の流量制御を行うので、領域間の熱干渉を抑えて、オーバーシュートの発生を抑制することができる。このため、熱板の複数の領域の温度制定を短時間で行うことができ、その結果、加熱処理のスループットを向上させることができる。 The following configurations also belong to the technical scope of the present disclosure.
(1) A method for cooling a hot plate, which heats a substrate, comprising:
The hot plate is divided into a plurality of regions, the temperature can be set by a heating mechanism for each region,
When cooling medium is supplied from a plurality of coolant supply units to the heat plate to cool the heat plate, the flow rate of the cooling medium for each coolant supply unit depends on the difference in the relative temperature decrease rate between the regions. How to control the hot plate cooling method.
In the above (1), since the flow rate of the cooling medium for each refrigerant supply unit is controlled according to the relative difference in the temperature decrease rate between the regions, the thermal interference between the regions is suppressed and the occurrence of overshoot is suppressed. be able to. Therefore, it is possible to establish the temperatures of the plurality of regions of the hot plate in a short time, and as a result, it is possible to improve the throughput of the heat treatment.

（２）前記複数の冷媒供給部から供給される冷却媒体の総流量は一定であり、
前記流量制御では、前記複数の冷媒供給部における冷却媒体の流量バランスを制御する、前記（１）に記載の熱板の冷却方法。
前記（２）では、冷却媒体の総流量を変更することなく、流量バランスのみを制御するので、全体として制御が簡易になる。 (2) The total flow rate of the cooling medium supplied from the plurality of refrigerant supply units is constant,
In the flow rate control, the hot plate cooling method according to (1), wherein the flow rate balance of the cooling medium in the plurality of coolant supply units is controlled.
In the above (2), since only the flow rate balance is controlled without changing the total flow rate of the cooling medium, the control becomes simple as a whole.

（３）前記流量制御では、前記複数の冷媒供給部から供給される冷却媒体の総流量を経時的に変化させる、前記（１）に記載の熱板の冷却方法。
前記（３）では、冷却媒体の総流量を経時的に変化させるので、熱板の冷却に使用される冷却媒体の量を軽減することができる。 (3) The hot plate cooling method according to (1), wherein in the flow rate control, the total flow rate of the cooling medium supplied from the plurality of refrigerant supply units is changed with time.
In the above (3), since the total flow rate of the cooling medium is changed with time, the amount of the cooling medium used for cooling the hot plate can be reduced.

（４）前記複数の領域は前記熱板と同心円状に配置され、
前記流量制御では、前記熱板において、径方向内側の前記領域の温度が、径方向外側の前記領域の温度以上になるように、前記冷媒供給部からの冷却媒体の流量を制御する、前記（１）〜（３）のいずれか１に記載の熱板の冷却方法。
ここで、径方向外側の領域では熱を外部に放出できるが、径方向内側の領域では熱が放出されず蓄積されやすい。前記（４）では、径方向内側の前記領域の温度が、径方向外側の前記領域の温度以上にすることで、熱板において径方向内側から外側に向けて熱が流れる。その結果、領域間の熱干渉を抑制することができ、オーバーシュートの発生を抑制することができる。 (4) The plurality of regions are arranged concentrically with the hot plate,
In the flow rate control, in the hot plate, the flow rate of the cooling medium from the refrigerant supply unit is controlled so that the temperature of the radially inner region is equal to or higher than the temperature of the radially outer region. The method for cooling a hot plate according to any one of 1) to (3).
Here, heat can be released to the outside in the radially outer region, but heat is likely to be accumulated and not released in the radially inner region. In (4) above, the temperature of the region on the radially inner side is set to be equal to or higher than the temperature of the region on the radially outer side, so that heat flows from the radially inner side to the outer side in the hot plate. As a result, thermal interference between regions can be suppressed, and overshoot can be suppressed.

（５）前記熱板を冷却しながら前記複数の領域の温度を測定し、
前記流量制御では、前記温度の測定結果に基づいて、前記冷媒供給部からの冷却媒体の流量を制御する、前記（１）〜（４）のいずれか１に記載の熱板の冷却方法。
前記（５）では、温度の測定結果に基づいて、冷媒供給部からの冷却媒体の流量をリアルタイム制御するので、当該冷却ガスの流量制御をより精密に行うことができる。 (5) Measuring the temperatures of the plurality of regions while cooling the hot plate,
In the flow rate control, the hot plate cooling method according to any one of (1) to (4), wherein the flow rate of the cooling medium from the coolant supply unit is controlled based on a measurement result of the temperature.
In the above (5), since the flow rate of the cooling medium from the refrigerant supply unit is controlled in real time based on the temperature measurement result, the flow rate of the cooling gas can be controlled more precisely.

（６）前記複数の領域が目標温度範囲に到達した際に、前記複数の冷媒供給部からの冷却媒体の供給を同時に停止する、前記（１）〜（５）のいずれか一項に記載の熱板の冷却方法。
前記（６）では、冷却ガスの供給停止タイミングを、複数の冷媒供給部間で同時にしているので、冷媒供給部における冷却媒体の供給制御が簡易になる。 (6) The supply of the cooling medium from the plurality of coolant supply units is stopped at the same time when the plurality of regions reach a target temperature range, according to any one of (1) to (5) above. How to cool the hot plate.
In the above (6), the supply stop timing of the cooling gas is simultaneously set between the plurality of refrigerant supply units, so that the supply control of the cooling medium in the refrigerant supply unit is simplified.

（７）基板を加熱処理する加熱処理装置であって、
基板を加熱処理する熱板と、
前記熱板が区画された複数の領域に対し、当該領域毎に加熱して温度を設定する加熱機構と、
前記熱板に対して冷却媒体を供給する複数の冷媒供給部と、
前記加熱機構と前記冷媒供給部を制御する制御部と、を有し、
前記制御部は、前記領域間の相対的な降温速度の違いに応じて、前記冷媒供給部毎の冷却媒体の流量を制御する、加熱処理装置。 (7) A heat treatment apparatus for heat treating a substrate, comprising:
A heating plate that heats the substrate,
A heating mechanism that sets a temperature by heating each of the plurality of regions in which the hot plate is partitioned,
A plurality of refrigerant supply units for supplying a cooling medium to the hot plate,
A control unit that controls the heating mechanism and the refrigerant supply unit,
The said control part is a heat processing apparatus which controls the flow volume of the cooling medium for every said refrigerant supply part according to the difference in the relative temperature-fall rate between the said area|regions.

３０ 熱板
３１ ヒータ
Ｎ１〜Ｎ７ ガスノズル
Ｒ１〜Ｒ７ 領域
Ｗ ウェハ 30 Heat Plate 31 Heater N 1 to N 7 Gas Nozzle R 1 to R 7 Region W Wafer

Claims (7)

基板を加熱処理する熱板の冷却方法であって、
前記熱板は複数の領域に区画され、当該領域毎に加熱機構によって温度設定可能であり、
複数の冷媒供給部から前記熱板に冷却媒体を供給して当該熱板を冷却する際に、前記領域間の相対的な降温速度の違いに応じて、前記冷媒供給部毎の冷却媒体の流量制御を行う、熱板の冷却方法。 A method of cooling a hot plate for heat treating a substrate, comprising:
The hot plate is divided into a plurality of regions, the temperature can be set by a heating mechanism for each region,
When cooling medium is supplied from a plurality of coolant supply units to the heat plate to cool the heat plate, the flow rate of the cooling medium for each coolant supply unit depends on the difference in the relative temperature decrease rate between the regions. How to control the hot plate cooling method. 前記複数の冷媒供給部から供給される冷却媒体の総流量は一定であり、
前記流量制御では、前記複数の冷媒供給部における冷却媒体の流量バランスを制御する、請求項１に記載の熱板の冷却方法。 The total flow rate of the cooling medium supplied from the plurality of refrigerant supply units is constant,
The method for cooling a hot plate according to claim 1, wherein in the flow rate control, the flow rate balance of the cooling medium in the plurality of refrigerant supply units is controlled. 前記流量制御では、前記複数の冷媒供給部から供給される冷却媒体の総流量を経時的に変化させる、請求項１に記載の熱板の冷却方法。 The method for cooling a hot plate according to claim 1, wherein in the flow rate control, a total flow rate of the cooling medium supplied from the plurality of refrigerant supply units is changed with time. 前記複数の領域は前記熱板と同心円状に配置され、
前記流量制御では、前記熱板において、径方向内側の前記領域の温度が、径方向外側の前記領域の温度以上になるように、前記冷媒供給部からの冷却媒体の流量を制御する、請求項１〜３のいずれか１項に記載の熱板の冷却方法。 The plurality of regions are arranged concentrically with the hot plate,
In the flow rate control, in the hot plate, the flow rate of the cooling medium from the refrigerant supply unit is controlled so that the temperature of the region on the radially inner side is equal to or higher than the temperature of the region on the radially outer side. The method for cooling a hot plate according to any one of 1 to 3. 前記熱板を冷却しながら前記複数の領域の温度を測定し、
前記流量制御では、前記温度の測定結果に基づいて、前記冷媒供給部からの冷却媒体の流量を制御する、請求項１〜４のいずれか１項に記載の熱板の冷却方法。 Measuring the temperature of the plurality of regions while cooling the hot plate,
The hot plate cooling method according to claim 1, wherein in the flow rate control, the flow rate of the cooling medium from the refrigerant supply unit is controlled based on the measurement result of the temperature. 前記複数の領域が目標温度範囲に到達した際に、前記複数の冷媒供給部からの冷却媒体の供給を同時に停止する、請求項１〜５のいずれか１項に記載の熱板の冷却方法。 The method for cooling a hot plate according to claim 1, wherein when the plurality of regions reach a target temperature range, the supply of the cooling medium from the plurality of coolant supply units is stopped at the same time. 基板を加熱処理する加熱処理装置であって、
基板を加熱処理する熱板と、
前記熱板が区画された複数の領域に対し、当該領域毎に加熱して温度を設定する加熱機構と、
前記熱板に対して冷却媒体を供給する複数の冷媒供給部と、
前記加熱機構と前記冷媒供給部を制御する制御部と、を有し、
前記制御部は、前記領域間の相対的な降温速度の違いに応じて、前記冷媒供給部毎の冷却媒体の流量を制御する、加熱処理装置。 A heat treatment apparatus for heat-treating a substrate,
A heating plate that heats the substrate,
A heating mechanism that sets a temperature by heating each of the plurality of regions in which the hot plate is partitioned,
A plurality of refrigerant supply units for supplying a cooling medium to the hot plate,
A control unit that controls the heating mechanism and the refrigerant supply unit,
The said control part is a heat processing apparatus which controls the flow volume of the cooling medium for every said refrigerant supply part according to the difference in the relative temperature-fall rate between the said area|regions.
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