JP2020096040A - 圧電体およびそれを用いたmemsデバイス - Google Patents
圧電体およびそれを用いたmemsデバイス Download PDFInfo
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- JP2020096040A JP2020096040A JP2018231681A JP2018231681A JP2020096040A JP 2020096040 A JP2020096040 A JP 2020096040A JP 2018231681 A JP2018231681 A JP 2018231681A JP 2018231681 A JP2018231681 A JP 2018231681A JP 2020096040 A JP2020096040 A JP 2020096040A
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- JP
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- Prior art keywords
- piezoelectric body
- piezoelectric
- ytterbium
- aluminum nitride
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- Prior art date
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 51
- 239000000126 substance Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 claims description 3
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 45
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 abstract description 45
- 239000010409 thin film Substances 0.000 description 45
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Analytical Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Abstract
Description
本発明の第9の態様は、第1〜第8の態様の何れか1つに記載の圧電体を用いたMEMSデバイスにある。
(実施形態1)
(実施例および比較例)
スパッタ装置:BC3263(アルバック社製)
イッテルビウムのスパッタリングターゲット材(濃度:99.999%)
アルミニウムのスパッタリングターゲット材(濃度:99.999%)
ガス:窒素(純度:99.99995%以上)とアルゴンガス(純度:99.9999%以上)の混合ガス(混合比 40:60)
基板加熱温度:300〜600℃
(実施形態2)
(実施形態3)
10 基板
20 拡散層
Claims (9)
- 化学式Al1−xYbxNで表され、xの値が0より大きく0.37より小さく、かつ格子定数比c/aが1.53以上で1.6より小さい範囲にあることを特徴とする圧電体。
- xの値が0.27より大きく0.37より小さい範囲にあることを特徴とする請求項1に記載の圧電体。
- 格子定数比c/aが1.53以上で1.555以下の範囲にあることを特徴とする請求項2に記載の圧電体。
- xの値が0より大きく0.1より小さい範囲にあることを特徴とする請求項1に記載の圧電体。
- 格子定数比c/aが1.57以上で1.6より小さい範囲にあることを特徴とする請求項4に記載の圧電体。
- 請求項1〜5の何れか1項に記載の圧電体が基板上に設けられており、前記圧電体と前記基板との間に、少なくとも1層の中間層が設けられていることを特徴とする圧電体。
- 前記中間層は、窒化アルミニウム、窒化ガリウム、窒化インジウム、窒化チタン、窒化スカンジウム、窒化イッテルビウム、モリブデン、タングステン、ハフニウム、チタン、ルテニウム、酸化ルテニウム、クロム、窒化クロム、白金、金、銀、銅、アルミニウム、タンタル、イリジウム、パラジウムおよびニッケルの少なくとも1つを含んでいることを特徴とする請求項6に記載の圧電体。
- 前記中間層と前記圧電体との間に、前記中間層を構成する物質と前記圧電体を構成する物質とが含まれる拡散層がさらに設けられていることを特徴とする請求項6または7に記載の圧電体。
- 請求項1〜8の何れか1項に記載の圧電体を用いたMEMSデバイス。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231681A JP7085208B2 (ja) | 2018-12-11 | 2018-12-11 | 圧電体およびそれを用いたmemsデバイス |
KR1020217008026A KR102604213B1 (ko) | 2018-12-11 | 2019-11-26 | 압전체 및 이를 이용한 mems 디바이스 |
PCT/JP2019/046052 WO2020121796A1 (ja) | 2018-12-11 | 2019-11-26 | 圧電体およびそれを用いたmemsデバイス |
EP19897007.1A EP3896029B1 (en) | 2018-12-11 | 2019-11-26 | Piezoelectric body and mems device using same |
US17/276,464 US11968902B2 (en) | 2018-12-11 | 2019-11-26 | Piezoelectric body and MEMS device using same |
CN201980076704.8A CN113165865B (zh) | 2018-12-11 | 2019-11-26 | 压电体以及使用其的mems器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231681A JP7085208B2 (ja) | 2018-12-11 | 2018-12-11 | 圧電体およびそれを用いたmemsデバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020096040A true JP2020096040A (ja) | 2020-06-18 |
JP2020096040A5 JP2020096040A5 (ja) | 2021-03-11 |
JP7085208B2 JP7085208B2 (ja) | 2022-06-16 |
Family
ID=71075954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018231681A Active JP7085208B2 (ja) | 2018-12-11 | 2018-12-11 | 圧電体およびそれを用いたmemsデバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US11968902B2 (ja) |
EP (1) | EP3896029B1 (ja) |
JP (1) | JP7085208B2 (ja) |
KR (1) | KR102604213B1 (ja) |
CN (1) | CN113165865B (ja) |
WO (1) | WO2020121796A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102604212B1 (ko) * | 2019-02-22 | 2023-11-20 | 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 | 질화물 압전체 및 이를 이용한 mems 디바이스 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002344279A (ja) * | 2001-05-11 | 2002-11-29 | Ube Electronics Ltd | 圧電薄膜共振子 |
JP2005244184A (ja) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
US20170263847A1 (en) * | 2016-03-09 | 2017-09-14 | Teledyne Dalsa Semiconductor, Inc. | Piezoelectric Alloy Films |
JP2017201050A (ja) * | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002093740A1 (fr) | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Resonateur d'onde acoustique en volume a couche mince |
CN1983464B (zh) * | 2002-10-24 | 2010-12-08 | 精工爱普生株式会社 | 强电介质膜、强电介质电容器、强电介质存储器、压电元件、半导体元件 |
JP4911907B2 (ja) * | 2005-03-25 | 2012-04-04 | 京セラ株式会社 | 圧電アクチュエータ及び液体吐出装置 |
JP4977380B2 (ja) * | 2005-05-31 | 2012-07-18 | 京セラ株式会社 | 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド |
JP5190841B2 (ja) | 2007-05-31 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
TWI621185B (zh) * | 2011-12-01 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US9520855B2 (en) * | 2014-02-26 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonators having doped piezoelectric material and frame elements |
JP7345855B2 (ja) * | 2020-02-27 | 2023-09-19 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス |
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2018
- 2018-12-11 JP JP2018231681A patent/JP7085208B2/ja active Active
-
2019
- 2019-11-26 CN CN201980076704.8A patent/CN113165865B/zh active Active
- 2019-11-26 WO PCT/JP2019/046052 patent/WO2020121796A1/ja unknown
- 2019-11-26 EP EP19897007.1A patent/EP3896029B1/en active Active
- 2019-11-26 US US17/276,464 patent/US11968902B2/en active Active
- 2019-11-26 KR KR1020217008026A patent/KR102604213B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002344279A (ja) * | 2001-05-11 | 2002-11-29 | Ube Electronics Ltd | 圧電薄膜共振子 |
JP2005244184A (ja) * | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
US20170263847A1 (en) * | 2016-03-09 | 2017-09-14 | Teledyne Dalsa Semiconductor, Inc. | Piezoelectric Alloy Films |
JP2017201050A (ja) * | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
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US20220037582A1 (en) | 2022-02-03 |
KR20210048513A (ko) | 2021-05-03 |
JP7085208B2 (ja) | 2022-06-16 |
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CN113165865A (zh) | 2021-07-23 |
KR102604213B1 (ko) | 2023-11-20 |
EP3896029A1 (en) | 2021-10-20 |
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WO2020121796A1 (ja) | 2020-06-18 |
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