JP2020064780A - Charged particle beam device and sample processing observation method - Google Patents

Charged particle beam device and sample processing observation method Download PDF

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JP2020064780A
JP2020064780A JP2018196666A JP2018196666A JP2020064780A JP 2020064780 A JP2020064780 A JP 2020064780A JP 2018196666 A JP2018196666 A JP 2018196666A JP 2018196666 A JP2018196666 A JP 2018196666A JP 2020064780 A JP2020064780 A JP 2020064780A
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鈴木　秀和
Hidekazu Suzuki
秀和 鈴木
麻畑　達也
Tatsuya Asahata
達也 麻畑
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Hitachi High Tech Science Corp
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Abstract

To provide a charged particle beam device and a sample processing observation method which can obtain a high-resolution SEM image by narrowing a distance between an electron beam barrel and a sample without changing the size of a stage, and obtain the SEM image opposite to an observation face of the sample.SOLUTION: A sample processing observation method includes: a sample piece formation step of emitting the focused ion beam to a sample and cutting out a sample piece from the sample; a cross section processing step of supporting the sample piece by a sample piece support body, emitting the focused ion beam to the cross section of the sample piece and performing processing of the cross section; a sample piece proximity movement step of supporting the sample piece by the sample piece support body and moving the sample piece to the position proximate to the electron beam barrel with respect to the intersection between the beam optical axis of the focused ion beam and the beam optical axis of the electron beam; and a SEM image acquisition step of emitting the electron beam to the cross section of the sample piece and acquiring the SEM image of the cross section.SELECTED DRAWING: Figure 2

Description

本発明は、荷電粒子ビームを用いて試料の加工および観察を行う荷電粒子ビーム装置および試料加工観察方法に関する。   The present invention relates to a charged particle beam apparatus and a sample processing and observation method for processing and observing a sample using a charged particle beam.

例えば、半導体デバイス等の試料の内部構造を解析したり、立体的な観察を行ったりする手法の１つとして、集束イオンビーム（Focused Ion Beam;ＦＩＢ）鏡筒、電子ビーム（Electron Beam；ＥＢ）鏡筒を搭載した荷電粒子ビーム複合装置を用いて、ＦＩＢによる断面形成加工と、その断面を走査型電子顕微鏡（Scanning Electron Microscope；ＳＥＭ）により観察を行う断面加工観察方法が知られている（例えば、特許文献１を参照）。   For example, as one of the methods for analyzing the internal structure of a sample such as a semiconductor device or performing three-dimensional observation, a focused ion beam (FIB) lens barrel, an electron beam (EB) is used. A cross-section processing and observing method is known in which a cross-section forming process by FIB and a cross-section observing the cross-section by a scanning electron microscope (SEM) are performed by using a charged particle beam composite apparatus equipped with a lens barrel (for example, , Patent Document 1).

この断面加工観察方法は、ＦＩＢによる断面形成加工とＳＥＭによる断面観察を繰り返して３次元画像を構築する手法が知られている。この手法では、再構築した３次元立体像から、対象試料の立体的な形体を様々な方向から詳細に解析することができる。特に、試料の厚さに依存することなく高分解能で観察することができるという、他の方法にはない利点を有している。   As this cross-section processing and observation method, there is known a method of constructing a three-dimensional image by repeating cross-section formation processing by FIB and cross-section observation by SEM. With this method, the three-dimensional shape of the target sample can be analyzed in detail from various directions from the reconstructed three-dimensional stereoscopic image. In particular, it has an advantage over other methods that observation can be performed with high resolution without depending on the thickness of the sample.

その一方で、ＳＥＭは原理上、高倍率（高分解能）の観察に限界があり、また得られる情報も試料表面近くに限定される。このため、より高倍率で高分解能の観察のために、薄膜状に加工した試料に電子を透過させる透過型電子顕微鏡（Transmission Electron Microscopy：ＴＥＭ）を用いた観察方法も知られている。   On the other hand, the SEM has a limit to observation at high magnification (high resolution) in principle, and the obtained information is limited to near the sample surface. For this reason, an observation method using a transmission electron microscope (TEM) that allows electrons to pass through a sample processed into a thin film is also known for higher magnification and high resolution observation.

特開２０１０−２３２１９５号公報JP, 2010-232195, A

複合荷電粒子ビーム装置を用いて試料の断面加工を高精度に行うためには、高解像度のＳＥＭ画像を取得する必要がある。高解像度のＳＥＭ画像を取得するためには、電子ビーム鏡筒と試料との距離（working distance：ＷＤ）を可能な限り狭めることが望ましい。しかしながら、従来の複合荷電粒子ビーム装置は、試料が載置されたステージと電子ビーム鏡筒との干渉を避ける必要があり、ＷＤを狭めることは困難であった。   In order to perform the cross-section processing of the sample with high accuracy using the composite charged particle beam device, it is necessary to acquire a high-resolution SEM image. In order to obtain a high-resolution SEM image, it is desirable to make the working distance (WD) between the electron beam column and the sample as narrow as possible. However, in the conventional composite charged particle beam apparatus, it is necessary to avoid interference between the stage on which the sample is placed and the electron beam lens barrel, and it is difficult to narrow the WD.

また、ステージと電子ビーム鏡筒との干渉を避けるために、ステージをより小型化することも考えられるが、この場合、小型化したステージに載置できる試料サイズが制限されるため、大きなステージに載置された試料から観察対象部分をピックアップして、小型化した専用のステージに移載してＳＥＭ画像を取得することになる。この場合、大きなステージと小型化した専用のステージとでは形状や容量が異なるため、試料観察位置付近の電界分布が異なってしまい、電界の補正が必要となる。しかしながら電界の補正が可能な範囲には制限があり、電界の補正範囲を超える場合は二次電子検出器の検出効率が低下し、コントラストが低いＳＥＭ画像しか得られないという課題もある。   Further, in order to avoid the interference between the stage and the electron beam lens barrel, it is possible to make the stage smaller, but in this case, the size of the sample that can be mounted on the miniaturized stage is limited, so it is possible to use a large stage. A portion to be observed is picked up from the mounted sample and transferred to a miniaturized dedicated stage to acquire an SEM image. In this case, since the large stage and the miniaturized dedicated stage have different shapes and capacities, the electric field distribution near the sample observation position is different, and the electric field needs to be corrected. However, there is a limit to the range in which the electric field can be corrected, and if the electric field is beyond the correction range, the detection efficiency of the secondary electron detector decreases, and there is also the problem that only SEM images with low contrast can be obtained.

また、従来の一般的な複合荷電粒子ビーム装置の場合、試料断面に対して電子ビーム鏡筒の観察角度（電子ビームの入射角度）は概ね５４°になっており、得られたＳＥＭ画像は上下方向に収縮した画像となる。このため、縦横比を実際の試料と合致させるためにＳＥＭ画像を縦方向に引き伸ばす補正を行っているが、ソフトウエア的に画像加工されたＳＥＭ画像は、実際の試料断面像を正確に反映していない不正確な画像になってしまうという課題もある。   Further, in the case of the conventional general compound charged particle beam apparatus, the observation angle of the electron beam lens barrel (incident angle of the electron beam) is approximately 54 ° with respect to the sample cross section, and the obtained SEM image is up and down. The image shrinks in the direction. Therefore, in order to match the aspect ratio with the actual sample, correction is performed to stretch the SEM image in the vertical direction, but the SEM image processed by software accurately reflects the actual sample cross-sectional image. There is also the problem that the image will not be accurate.

本発明は、前述した事情に鑑みてなされたものであって、ステージのサイズを変更することなく電子ビーム鏡筒と試料との距離を狭めて高解像度のＳＥＭ画像を得ることが可能であり、かつ試料の観察面に正対したＳＥＭ画像を得ることが可能な荷電粒子ビーム装置、および試料加工観察方法を提供することを目的とする。   The present invention has been made in view of the above-mentioned circumstances, and it is possible to obtain a high-resolution SEM image by reducing the distance between the electron beam column and the sample without changing the size of the stage. Another object of the present invention is to provide a charged particle beam device capable of obtaining an SEM image directly facing the observation surface of a sample, and a sample processing and observation method.

上記課題を解決するために、本実施形態の態様は、以下のような荷電粒子ビーム装置、および試料加工観察方法を提供した。
すなわち、本発明の荷電粒子ビーム装置は、集束イオンビームを照射する集束イオンビーム鏡筒と、電子ビームを照射する電子ビーム鏡筒と、試料を載置するステージと、前記試料から切り出された観察対象部を含む試料片を保持する試料片支持体と、前記集束イオンビーム鏡筒、前記電子ビーム鏡筒、前記ステージおよび前記試料片支持体の動作を制御する制御部と、を備え、前記制御部は、前記試料の観察対象部を含む断面のＳＥＭ画像を取得する際に、前記集束イオンビームのビーム光軸と前記電子ビームのビーム光軸との交点よりも前記電子ビーム鏡筒に近接する位置まで前記試料片を移動させる制御を行うことを特徴とする。 In order to solve the above-mentioned subject, the mode of this embodiment provided the following charged particle beam devices, and the sample processing observation method.
That is, the charged particle beam device of the present invention includes a focused ion beam column for irradiating a focused ion beam, an electron beam column for irradiating an electron beam, a stage for mounting a sample, and an observation cut out from the sample. A sample piece support that holds a sample piece including a target portion; and a controller that controls the operations of the focused ion beam lens barrel, the electron beam lens barrel, the stage, and the sample piece support, and the control The part is closer to the electron beam column than the intersection of the beam optical axis of the focused ion beam and the beam optical axis of the electron beam when acquiring the SEM image of the cross section including the observation target part of the sample. It is characterized in that control is performed to move the sample piece to a position.

また、本発明では、前記集束イオンビームによって前記断面を形成する際に、前記交点に前記試料片を移動させる制御を行うことを特徴とする。   Further, in the present invention, when the cross section is formed by the focused ion beam, control for moving the sample piece to the intersection is performed.

また、本発明では、前記断面に前記集束イオンビームを照射して前記断面の加工を行う際、前記試料の観察対象部を含む断面のＳＥＭ画像を取得する際、の少なくともいずれか一方において、前記ステージを前記試料片に向けて接近動作させる制御を行うことを特徴とする。   Further, in the present invention, in processing at least one of the cross-section including the observation target portion of the sample, when the cross-section is processed by irradiating the cross-section with the focused ion beam, It is characterized in that the stage is controlled to move toward the sample piece.

本発明の試料加工観察方法は、集束イオンビームを照射する集束イオンビーム鏡筒と、電子ビームを照射する電子ビーム鏡筒と、試料から切り出された観察対象部を含む試料片を保持する試料片支持体と、を備えた荷電粒子ビーム装置を用いて、前記試料の観察対象部を含む断面の加工およびＳＥＭ画像を得る試料加工観察方法であって、前記集束イオンビームを前記試料に照射して、前記試料から前記試料片を切り出す試料片形成工程と、前記試料片を前記試料片支持体で支持し、前記試料片の前記断面に前記集束イオンビームを照射して、前記断面の加工を行う断面加工工程と、前記試料片を前記試料片支持体で支持し、前記集束イオンビームのビーム光軸と前記電子ビームのビーム光軸との交点よりも前記電子ビーム鏡筒に近接する位置まで前記試料片を移動させる試料片近接移動工程と、前記試料片の前記断面に向けて前記電子ビームを照射して、前記断面のＳＥＭ画像を取得するＳＥＭ画像取得工程と、を備えたことを特徴とする。   A sample processing and observation method of the present invention is a sample piece for holding a sample piece including a focused ion beam column for irradiating a focused ion beam, an electron beam column for irradiating an electron beam, and an observation target portion cut out from the sample. A sample processing and observation method for obtaining a SEM image by processing a cross section of the sample including an observation target part by using a charged particle beam device including a support, and irradiating the sample with the focused ion beam. A sample piece forming step of cutting out the sample piece from the sample, supporting the sample piece with the sample piece support, irradiating the cross section of the sample piece with the focused ion beam, and processing the cross section A cross-section processing step, supporting the sample piece by the sample piece support, and moving the sample piece closer to the electron beam lens barrel than the intersection of the beam optical axis of the focused ion beam and the beam optical axis of the electron beam. To a sample piece proximity moving step of moving the sample piece, and an SEM image acquisition step of irradiating the cross section of the sample piece with the electron beam to acquire an SEM image of the cross section. Characterize.

また、本発明では、前記試料片を前記試料片支持体で支持し、前記試料片の前記断面が前記電子ビームのビーム光軸に対して直角になるように傾斜させる試料片角度調節工程を更に備えたことを特徴とする。   Further, in the present invention, a sample piece angle adjusting step of supporting the sample piece with the sample piece support and inclining the sample piece so that the cross section of the sample piece is perpendicular to the beam optical axis of the electron beam is further included. It is characterized by having.

また、本発明では、前記試料片にドリフト補正マークを形成する補正マーク形成工程を更に備えたことを特徴とする。   Further, the present invention is characterized by further comprising a correction mark forming step of forming a drift correction mark on the sample piece.

また、本発明では、前記試料片支持体は複数形成され、前記試料片角度調節工程は、複数の前記試料片支持体どうしの間で前記試料片を受け渡して行うことを特徴とする。   Further, in the present invention, a plurality of the sample piece supports are formed, and the sample piece angle adjusting step is performed by passing the sample piece between the plurality of sample piece supports.

また、本発明では、前記断面加工工程またはＳＥＭ画像取得工程の少なくともいずれか一方では、前記試料を載置するステージを前記試料片に向けて接近動作させることを特徴とする。   Further, in the present invention, at least one of the cross-section processing step and the SEM image acquisition step is characterized in that a stage on which the sample is placed is moved toward the sample piece.

また、本発明では、前記断面加工工程では、前記試料片の周縁部分の少なくとも一部よりも内側だけを薄膜化させることを特徴とする。   Further, in the present invention, in the cross-section processing step, only the inner side of at least a part of the peripheral portion of the sample piece is thinned.

また、本発明では、前記断面加工工程から前記試料片近接移動工程を経て前記画像取得工程までを、予め設定した回数繰り返すことを特徴とする。   Further, the present invention is characterized in that the section processing step, the sample piece proximity moving step, and the image acquisition step are repeated a preset number of times.

本発明によれば、特殊なステージを用いることなく電子ビーム鏡筒と試料との距離を狭めて、高解像度のＳＥＭ画像を容易に得ることが可能な荷電粒子ビーム装置、および試料加工観察方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the charged particle beam apparatus and sample processing observation method which can narrow the distance between an electron beam lens barrel and a sample without using a special stage, and can obtain a high-resolution SEM image easily are provided. Can be provided.

本発明の荷電粒子ビーム装置の一例を示す構成図である。It is a block diagram which shows an example of the charged particle beam apparatus of this invention. 本発明の試料加工観察方法を段階的に示したフローチャートである。It is the flowchart which showed the sample processing observation method of this invention step by step. 第１実施形態を示す説明図である。It is explanatory drawing which shows 1st Embodiment. 第１実施形態の変形例を示す説明図である。It is explanatory drawing which shows the modification of 1st Embodiment. 第２実施形態を示す説明図である。It is explanatory drawing which shows 2nd Embodiment. 第３実施形態を示す説明図である。It is explanatory drawing which shows 3rd Embodiment. 第４実施形態を示す説明図である。It is explanatory drawing which shows 4th Embodiment. 第４実施形態を示す説明図である。It is explanatory drawing which shows 4th Embodiment.

以下、図面を参照して、本発明の一実施形態である荷電粒子ビーム装置、および試料加工観察方法について説明する。なお、以下に示す各実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。また、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。   Hereinafter, a charged particle beam device and a sample processing and observation method according to an embodiment of the present invention will be described with reference to the drawings. The following embodiments are specifically described in order to better understand the gist of the invention, and do not limit the invention unless otherwise specified. Further, in the drawings used in the following description, in order to facilitate understanding of the features of the present invention, for convenience, there are cases where essential parts are enlarged and shown, and the dimensional ratios of each component are the same as the actual ones. Not necessarily.

（荷電粒子ビーム装置）
図１は、本発明の一実施形態の荷電粒子ビーム装置を示す構成図である。
本発明の一実施形態の荷電粒子ビーム装置（複合荷電粒子ビーム装置）１０は、図１に示すように、内部を真空状態に維持可能な試料室１１と、試料室１１の内部において、バルクの試料Ｖを保持するための試料ホルダＰを固定可能なステージ１２と、ステージ１２を駆動するステージ駆動機構１３と、を備えている。 (Charged particle beam device)
FIG. 1 is a configuration diagram showing a charged particle beam system according to an embodiment of the present invention.
As shown in FIG. 1, a charged particle beam device (composite charged particle beam device) 10 according to an embodiment of the present invention includes a sample chamber 11 capable of maintaining a vacuum state inside, and a bulk chamber inside the sample chamber 11. A stage 12 capable of fixing a sample holder P for holding the sample V and a stage drive mechanism 13 for driving the stage 12 are provided.

荷電粒子ビーム装置１０は、試料室１１の内部における所定の照射領域（つまり走査範囲）内の照射対象に荷電粒子ビーム、例えば集束イオンビーム（ＦＩＢ）を照射する集束イオンビーム鏡筒１４を備えている。本実施形態では、集束イオンビーム（ＦＩＢ）として、ガリウムイオンビームが用いられる。   The charged particle beam apparatus 10 includes a focused ion beam lens barrel 14 that irradiates a charged particle beam, for example, a focused ion beam (FIB) onto an irradiation target within a predetermined irradiation region (that is, a scanning range) inside the sample chamber 11. There is. In this embodiment, a gallium ion beam is used as the focused ion beam (FIB).

荷電粒子ビーム装置１０は、試料室１１の内部における所定の照射領域内の照射対象に電子ビーム（ＥＢ）を照射する電子ビーム鏡筒１５を備えている。
荷電粒子ビーム装置１０は、集束イオンビーム（ＦＩＢ）または電子ビーム（ＥＢ）の照射によって照射対象から発生する二次荷電粒子（二次電子、二次イオン）Ｒを検出する検出器１６を備えている。 The charged particle beam system 10 includes an electron beam column 15 that irradiates an irradiation target in a predetermined irradiation region inside the sample chamber 11 with an electron beam (EB).
The charged particle beam device 10 includes a detector 16 that detects secondary charged particles (secondary electrons, secondary ions) R generated from an irradiation target by irradiation with a focused ion beam (FIB) or an electron beam (EB). There is.

荷電粒子ビーム装置１０は、試料室１１の内部における所定の照射領域内の照射対象に荷電粒子ビームである気体イオンビーム（ＧＢ）を照射する気体イオンビーム鏡筒１８を備えている。本実施形態では、気体イオンビーム（ＧＢ）として、アルゴンイオンビームが用いられる。   The charged particle beam device 10 includes a gas ion beam column 18 that irradiates an irradiation target in a predetermined irradiation region inside the sample chamber 11 with a gas ion beam (GB) that is a charged particle beam. In this embodiment, an argon ion beam is used as the gas ion beam (GB).

これら集束イオンビーム鏡筒１４、電子ビーム鏡筒１５、および気体イオンビーム鏡筒１８は、それぞれのビーム照射軸がステージ１２上の実質的な１点である交点Ｃで交差可能なように配置されている。即ち、本実施形態では、試料室１１を側面から平面視した時に、電子ビーム鏡筒１５は鉛直方向に沿って配置され、集束イオンビーム鏡筒１４と気体イオンビーム鏡筒１８は、それぞれ鉛直方向に対して例えば６０°と４５°傾斜した方向に沿って配置されている。こうした配置レイアウトにより、試料室１１を側面から平面視した時に、集束イオンビーム鏡筒１４から照射される集束イオンビーム（ＦＩＢ）のビーム照射軸に対して、気体イオンビーム（ＧＢ）のビーム照射軸は、例えば直角に交わる方向になる。   The focused ion beam lens barrel 14, the electron beam lens barrel 15, and the gas ion beam lens barrel 18 are arranged so that their beam irradiation axes can intersect at an intersection C, which is substantially one point on the stage 12. ing. That is, in the present embodiment, when the sample chamber 11 is viewed in a plan view from the side surface, the electron beam column 15 is arranged along the vertical direction, and the focused ion beam column 14 and the gas ion beam column 18 are respectively arranged in the vertical direction. For example, they are arranged along a direction inclined by 60 ° and 45 °. With such an arrangement layout, when the sample chamber 11 is viewed from the side in a plan view, the beam irradiation axis of the gas ion beam (GB) is different from the beam irradiation axis of the focused ion beam (FIB) irradiated from the focused ion beam column 14. Is a direction intersecting at right angles, for example.

荷電粒子ビーム装置１０は、照射対象の表面にガスＧを供給するガス供給部１７を備えている。ガス供給部１７は具体的には外径２００μｍ程度のノズル１７ａなどである。   The charged particle beam device 10 includes a gas supply unit 17 that supplies the gas G to the surface of the irradiation target. The gas supply unit 17 is specifically a nozzle 17a having an outer diameter of about 200 μm.

荷電粒子ビーム装置１０は、ステージ１２に固定された試料Ｖから試料片Ｓを取り出し、この試料片Ｓを保持するニードル１９ａおよびニードル１９ａを駆動して試料片Ｓを移動、回転させるニードル駆動機構１９ｂからなる試料片支持体１９を備えている。
また、ニードル１９ａに流入する荷電粒子ビームの流入電流（吸収電流とも言う）を検出し、流入電流信号はコンピュータに送り画像化する吸収電流検出器２０と、を備えている。 The charged particle beam device 10 takes out a sample piece S from a sample V fixed to the stage 12, drives a needle 19a holding the sample piece S and a needle 19a to move and rotate the sample piece S, a needle drive mechanism 19b. The sample piece support 19 made of
Further, an absorption current detector 20 for detecting an inflow current (also called an absorption current) of the charged particle beam flowing into the needle 19a and sending an inflow current signal to a computer for imaging is provided.

本実施形態では、試料片支持体１９は１つだけ形成されているが、試料片支持体１９を複数形成することもできる。例えば、試料片支持体１９が２つ形成される場合には、試料片支持体１９どうしが、水平回りで互いに１８０°対向して配置されていたり、互いに９０°の角度で配置されていればよい。   Although only one sample piece support 19 is formed in the present embodiment, a plurality of sample piece supports 19 may be formed. For example, when two sample piece supports 19 are formed, if the sample piece supports 19 are arranged to face each other by 180 ° in the horizontal direction or are arranged at an angle of 90 ° to each other. Good.

荷電粒子ビーム装置１０は、検出器１６によって検出された二次荷電粒子Ｒに基づく画像データなどを表示する表示装置２１と、コンピュータ（制御部）２２と、入力デバイス２３と、を備えている。なお、集束イオンビーム鏡筒１４および電子ビーム鏡筒１５の照射対象は、ステージ１２に固定された試料Ｖ、試料片Ｓなどである。   The charged particle beam device 10 includes a display device 21 that displays image data based on the secondary charged particles R detected by the detector 16, a computer (control unit) 22, and an input device 23. The focused ion beam lens barrel 14 and the electron beam lens barrel 15 are irradiated with the sample V, the sample piece S, etc. fixed to the stage 12.

荷電粒子ビーム装置１０は、照射対象の表面に荷電粒子ビームを走査しながら照射することによって、被照射部の画像化やスパッタリングによる各種の加工（掘削、トリミング加工など）と、デポジション膜の形成などが実行可能である。荷電粒子ビーム装置１０は、試料Ｖから試料片Ｓの切り出し、切り出した試料片ＳからＴＥＭによる観察に用いる微小試料片（例えば、薄片試料、針状試料など）や電子ビーム利用の分析試料片を形成する加工を実行可能である。   The charged particle beam device 10 irradiates a surface of an irradiation target with a charged particle beam while scanning, thereby performing various processes (excavation, trimming process, etc.) by imaging or irradiating an irradiated part, and forming a deposition film. Is possible. The charged particle beam device 10 cuts out a sample piece S from a sample V and a minute sample piece (for example, a thin piece sample, a needle-shaped sample, etc.) used for observation by a TEM from the cut sample piece S or an analytical sample piece using an electron beam. The forming process can be performed.

荷電粒子ビーム装置１０は、試料片支持体１９のニードル１９ａの先端で試料Ｖから切り出した試料片Ｓを保持した状態で、試料片Ｓに向けて集束イオンビーム（ＦＩＢ）や気体イオンビーム（ＧＢ）を照射して、試料片Ｓの観察対象部を含む断面の加工を行うことができる。   The charged particle beam device 10 holds the sample piece S cut out from the sample V at the tip of the needle 19a of the sample piece support 19, and then the focused ion beam (FIB) or the gas ion beam (GB) toward the sample piece S. ) Can be irradiated to process the cross section including the observation target portion of the sample piece S.

また、荷電粒子ビーム装置１０は、試料片支持体１９のニードル１９ａの先端で試料片Ｓを保持した状態で、試料片Ｓの断面に向けて電子ビーム（ＥＢ）を照射して、試料片Ｓの断面から生じた二次荷電粒子（二次電子、二次イオン）Ｒを検出器１６で検出することで、試料片Ｓの断面のＳＥＭ画像を取得することができる。   In addition, the charged particle beam device 10 irradiates an electron beam (EB) toward the cross section of the sample piece S while holding the sample piece S at the tip of the needle 19a of the sample piece support 19, and the sample piece S By detecting the secondary charged particles (secondary electrons, secondary ions) R generated from the cross section of the detector 16 with the detector 16, an SEM image of the cross section of the sample piece S can be acquired.

吸収電流検出器２０は、プリアンプを備え、ニードルの流入電流を増幅し、コンピュータ２２に送る。吸収電流検出器２０により検出されるニードル流入電流と荷電粒子ビームの走査と同期した信号により、表示装置２１にニードル形状の吸収電流画像を表示でき、ニードル形状や先端位置特定が行える。   The absorption current detector 20 includes a preamplifier, amplifies the inflow current of the needle and sends it to the computer 22. A needle-shaped absorption current image detected by the absorption current detector 20 and a signal synchronized with the scanning of the charged particle beam can be used to display a needle-shaped absorption current image on the display device 21 to identify the needle shape and the tip position.

試料室１１は、排気装置（図示略）によって内部を所望の真空状態になるまで排気可能であるとともに、所望の真空状態を維持可能に構成されている。
ステージ１２は、試料Ｖを保持する。ステージ１２は、試料Ｖを固定する試料ホルダＰを保持するホルダ固定台１２ａを備えている。このホルダ固定台１２ａは複数の試料ホルダＰを搭載できる構造であってもよい。 The sample chamber 11 can be evacuated to a desired vacuum state by an evacuation device (not shown), and can maintain the desired vacuum state.
The stage 12 holds the sample V. The stage 12 includes a holder fixing base 12a that holds a sample holder P that fixes the sample V. The holder fixing base 12a may have a structure capable of mounting a plurality of sample holders P.

ステージ駆動機構１３は、ステージ１２に接続された状態で試料室１１の内部に収容されており、コンピュータ（制御部）２２から出力される制御信号に応じてステージ１２を所定軸に対して変位させる。ステージ駆動機構１３は、少なくとも水平面に平行かつ互いに直交するＸ軸およびＹ軸と、Ｘ軸およびＹ軸に直交する鉛直方向のＺ軸とに沿って平行にステージ１２を移動させる移動機構１３ａを備えている。ステージ駆動機構１３は、ステージ１２をＸ軸またはＹ軸周りに傾斜させる傾斜機構１３ｂと、ステージ１２をＺ軸周りに回転させる回転機構１３ｃと、を備えている。   The stage drive mechanism 13 is housed inside the sample chamber 11 in a state of being connected to the stage 12, and displaces the stage 12 with respect to a predetermined axis according to a control signal output from a computer (control unit) 22. . The stage driving mechanism 13 includes a moving mechanism 13a that moves the stage 12 in parallel along at least an X axis and a Y axis that are parallel to the horizontal plane and are orthogonal to each other, and a vertical Z axis that is orthogonal to the X axis and the Y axis. ing. The stage drive mechanism 13 includes a tilt mechanism 13b that tilts the stage 12 around the X axis or the Y axis, and a rotation mechanism 13c that rotates the stage 12 around the Z axis.

集束イオンビーム鏡筒１４は、試料室１１の内部においてビーム出射部（図示略）を、照射領域内のステージ１２の鉛直方向に対して所定角度（例えば６０°）傾斜した傾斜方向でステージ１２に臨ませるとともに、光軸を傾斜方向に平行にして、試料室１１に固定されている。これによって、ステージ１２に載置された試料Ｖ、試料片Ｓ、および照射領域内に存在するニードル１９ａなどの照射対象に傾斜方向の上方から下方に向かい集束イオンビームを照射可能である。   The focused ion beam lens barrel 14 directs a beam emitting unit (not shown) inside the sample chamber 11 to the stage 12 in an inclined direction inclined by a predetermined angle (for example, 60 °) with respect to the vertical direction of the stage 12 in the irradiation region. It is fixed in the sample chamber 11 with the optical axis parallel to the tilt direction. As a result, it is possible to irradiate the irradiation target such as the sample V, the sample S mounted on the stage 12 and the needle 19a existing in the irradiation region with the focused ion beam from the upper side to the lower side in the tilt direction.

集束イオンビーム鏡筒１４は、イオンを発生させるイオン源１４ａと、イオン源１４ａから引き出されたイオンを集束および偏向させるイオン光学系１４ｂと、を備えている。イオン源１４ａおよびイオン光学系１４ｂは、コンピュータ（制御部）２２から出力される制御信号に応じて制御され、荷電粒子ビームの照射位置および照射条件などがコンピュータ２２によって制御される。   The focused ion beam lens barrel 14 includes an ion source 14a that generates ions, and an ion optical system 14b that focuses and deflects the ions extracted from the ion source 14a. The ion source 14a and the ion optical system 14b are controlled according to a control signal output from a computer (control unit) 22, and the irradiation position and irradiation conditions of the charged particle beam are controlled by the computer 22.

イオン源１４ａは、例えば、液体ガリウムなどを用いた液体金属イオン源やプラズマ型イオン源、ガス電界電離型イオン源などである。イオン光学系１４ｂは、例えば、コンデンサレンズなどの第１静電レンズと、静電偏向器と、対物レンズなどの第２静電レンズと、などを備えている。イオン源１４ａとして、プラズマ型イオン源を用いた場合、大電流ビームによる高速な加工が実現でき、サイズの大きな試料片Ｓの摘出に好適である。例えば、ガス電界電離型イオン源としてアルゴンイオンを用いることで、集束イオンビーム鏡筒１４からアルゴンイオンビームを照射することもできる。   The ion source 14a is, for example, a liquid metal ion source using liquid gallium or the like, a plasma type ion source, a gas field ionization type ion source, or the like. The ion optical system 14b includes, for example, a first electrostatic lens such as a condenser lens, an electrostatic deflector, and a second electrostatic lens such as an objective lens. When a plasma type ion source is used as the ion source 14a, high-speed processing with a large current beam can be realized, which is suitable for extracting a large sample piece S. For example, by using argon ions as the gas field ionization type ion source, it is possible to irradiate the argon ion beam from the focused ion beam column 14.

電子ビーム鏡筒１５は、試料室１１の内部においてビーム出射部（図示略）を、照射領域内のステージ１２の鉛直方向上方の位置でステージ１２に臨ませるとともに、光軸を鉛直方向に平行にして、試料室１１に固定されている。これによって、ステージ１２に固定された試料Ｖ、試料片Ｓ、および照射領域内に存在するニードル１９ａなどの照射対象に鉛直方向上方から下方に向かい電子ビームを照射可能である。   The electron beam column 15 makes a beam emitting portion (not shown) inside the sample chamber 11 face the stage 12 at a position above the stage 12 in the irradiation region in the vertical direction, and makes the optical axis parallel to the vertical direction. And is fixed to the sample chamber 11. This makes it possible to irradiate the sample V fixed to the stage 12, the sample piece S, and the irradiation target such as the needle 19a existing in the irradiation region with the electron beam from the upper side to the lower side in the vertical direction.

電子ビーム鏡筒１５は、電子を発生させる電子源１５ａと、電子源１５ａから射出された電子を集束および偏向させる電子光学系１５ｂと、を備えている。電子源１５ａおよび電子光学系１５ｂは、コンピュータ（制御部）２２から出力される制御信号に応じて制御され、電子ビームの照射位置および照射条件などがコンピュータ２２によって制御される。電子光学系１５ｂは、例えば、電磁レンズや偏向器などを備えている。   The electron beam lens barrel 15 includes an electron source 15a that generates electrons, and an electron optical system 15b that focuses and deflects the electrons emitted from the electron source 15a. The electron source 15a and the electron optical system 15b are controlled according to a control signal output from a computer (control unit) 22, and the irradiation position and irradiation conditions of the electron beam are controlled by the computer 22. The electron optical system 15b includes, for example, an electromagnetic lens and a deflector.

なお、電子ビーム鏡筒１５と集束イオンビーム鏡筒１４の配置を入れ替えて、電子ビーム鏡筒１５を鉛直方向に所定角度傾斜した傾斜方向に、集束イオンビーム鏡筒１４を鉛直方向に配置してもよい。   The positions of the electron beam lens barrel 15 and the focused ion beam lens barrel 14 are replaced with each other, and the focused ion beam lens barrel 14 is arranged in the vertical direction in the tilt direction in which the electron beam lens barrel 15 is tilted by a predetermined angle in the vertical direction. Good.

気体イオンビーム鏡筒１８は、例えばアルゴンイオンビームなどの気体イオンビーム（ＧＢ）を照射する。気体イオンビーム鏡筒１８は、アルゴンガスをイオン化して１ｋＶ程度の低加速電圧で照射することができる。こうした気体イオンビーム（ＧＢ）は、集束イオンビーム（ＦＩＢ）に比べて集束性が低いため、試料片Ｓや微小試料片Ｑに対するエッチングレートが低くなる。よって、試料片Ｓや微小試料片Ｑの精密な仕上げ加工に好適である。   The gas ion beam column 18 irradiates a gas ion beam (GB) such as an argon ion beam. The gas ion beam column 18 can ionize argon gas and irradiate it with a low acceleration voltage of about 1 kV. Since such a gas ion beam (GB) has a lower focusing property than a focused ion beam (FIB), the etching rate for the sample piece S and the minute sample piece Q is low. Therefore, it is suitable for precise finishing of the sample piece S and the minute sample piece Q.

検出器１６は、試料Ｖ、試料片Ｓおよびニードル１９ａなどの照射対象に荷電粒子ビームや電子ビームが照射された時に照射対象から放射される二次荷電粒子（二次電子、二次イオン）Ｒの強度（つまり、二次荷電粒子の量）を検出し、二次荷電粒子Ｒの検出量の情報を出力する。検出器１６は、試料室１１の内部において二次荷電粒子Ｒの量を検出可能な位置、例えば照射領域内の試料Ｖ、試料片Ｓなどの照射対象に対して斜め上方の位置などに配置され、試料室１１に固定されている。   The detector 16 is a secondary charged particle (secondary electron, secondary ion) R emitted from the irradiation target when the irradiation target such as the sample V, the sample S, and the needle 19a is irradiated with the charged particle beam or the electron beam. Intensity (that is, the amount of the secondary charged particles) is detected, and information on the detected amount of the secondary charged particles R is output. The detector 16 is disposed inside the sample chamber 11 at a position where the amount of the secondary charged particles R can be detected, for example, at a position obliquely above the irradiation target such as the sample V and the sample piece S in the irradiation region. , Is fixed to the sample chamber 11.

ガス供給部１７は試料室１１に固定されており、試料室１１の内部においてガス噴射部（ノズルとも言う）を有し、ステージ１２に臨ませて配置されている。ガス供給部１７は、集束イオンビーム（ＦＩＢ）による試料Ｖ、試料片Ｓのエッチングを、これらの材質に応じて選択的に促進するためのエッチング用ガスと、試料Ｖ、試料片Ｓの表面に金属または絶縁体などの堆積物によるデポジション膜を形成するためのデポジション用ガスなどを試料Ｖ、試料片Ｓに供給可能である。   The gas supply unit 17 is fixed to the sample chamber 11, has a gas injection unit (also referred to as a nozzle) inside the sample chamber 11, and is arranged so as to face the stage 12. The gas supply unit 17 uses an etching gas for selectively accelerating the etching of the sample V and the sample piece S by a focused ion beam (FIB) according to the material, and the surface of the sample V and the sample piece S. A deposition gas or the like for forming a deposition film of a deposit such as a metal or an insulator can be supplied to the sample V and the sample piece S.

試料片支持体１９を構成するニードル駆動機構１９ｂは、ニードル１９ａが接続された状態で試料室１１の内部に収容されており、コンピュータ（制御部）２２から出力される制御信号に応じてニードル１９ａを変位させる。ニードル駆動機構１９ｂは、ステージ１２と一体に設けられており、例えばステージ１２が傾斜機構１３ｂによって傾斜軸（つまり、Ｘ軸またはＹ軸）周りに回転すると、ステージ１２と一体に移動する。   The needle drive mechanism 19b constituting the sample piece support 19 is housed inside the sample chamber 11 with the needle 19a connected, and the needle 19a is responsive to a control signal output from a computer (control unit) 22. To displace. The needle drive mechanism 19b is provided integrally with the stage 12, and moves integrally with the stage 12 when the stage 12 is rotated around the tilt axis (that is, the X axis or the Y axis) by the tilt mechanism 13b, for example.

ニードル駆動機構１９ｂは、３次元座標軸の各々に沿って平行にニードル１９ａを移動させる移動機構（図示略）と、ニードル１９ａの中心軸周りにニードル１９ａを回転させる回転機構（図示略）と、を備えている。なお、この３次元座標軸は、試料ステージの直交３軸座標系とは独立しており、ステージ１２の表面に平行な２次元座標軸とする直交３軸座標系で、ステージ１２の表面が傾斜状態、回転状態にある場合、この座標系は傾斜し、回転する。   The needle drive mechanism 19b includes a moving mechanism (not shown) that moves the needle 19a in parallel along each of the three-dimensional coordinate axes, and a rotating mechanism (not shown) that rotates the needle 19a around the central axis of the needle 19a. I have it. It should be noted that this three-dimensional coordinate axis is independent of the orthogonal three-axis coordinate system of the sample stage, and is the orthogonal three-axis coordinate system that is a two-dimensional coordinate axis parallel to the surface of the stage 12, and the surface of the stage 12 is inclined. When in the rotating state, this coordinate system tilts and rotates.

コンピュータ（制御部）２２は、少なくともステージ駆動機構１３と、集束イオンビーム鏡筒１４と、電子ビーム鏡筒１５と、ガス供給部１７と、ニードル駆動機構１９ｂを制御する。   The computer (control unit) 22 controls at least the stage driving mechanism 13, the focused ion beam lens barrel 14, the electron beam lens barrel 15, the gas supply unit 17, and the needle driving mechanism 19b.

また、コンピュータ２２は、試料室１１の外部に配置され、表示装置２１と、操作者の入力操作に応じた信号を出力するマウスやキーボードなどの入力デバイス２３とが接続されている。コンピュータ２２は、入力デバイス２３から出力される信号または予め設定された自動運転制御処理によって生成される信号などによって、荷電粒子ビーム装置１０の動作を統合的に制御する。   The computer 22 is arranged outside the sample chamber 11, and is connected to the display device 21 and an input device 23 such as a mouse or a keyboard that outputs a signal according to an input operation by the operator. The computer 22 integrally controls the operation of the charged particle beam apparatus 10 by a signal output from the input device 23 or a signal generated by a preset automatic operation control process.

コンピュータ２２は、荷電粒子ビームの照射位置を走査しながら検出器１６によって検出される二次荷電粒子Ｒの検出量を、照射位置に対応付けた輝度信号に変換して、二次荷電粒子Ｒの検出量の２次元位置分布によって照射対象の形状を示す画像データを生成する。   The computer 22 converts the detection amount of the secondary charged particles R detected by the detector 16 while scanning the irradiation position of the charged particle beam into a luminance signal associated with the irradiation position, and the secondary charged particles R are detected. Image data showing the shape of the irradiation target is generated by the two-dimensional position distribution of the detection amount.

コンピュータ２２は、生成した各画像データとともに、各画像データの拡大、縮小、移動、および回転などの操作を実行するための画面を、表示装置２１に表示させる。コンピュータ２２は、自動的なシーケンス制御におけるモード選択および加工設定などの各種の設定を行なうための画面を、表示装置２１に表示させる。   The computer 22 causes the display device 21 to display a screen for executing operations such as enlarging, reducing, moving, and rotating each image data together with the generated image data. The computer 22 causes the display device 21 to display a screen for performing various settings such as mode selection and processing settings in automatic sequence control.

（試料加工観察方法：第１実施形態）
上述した構成の荷電粒子ビーム装置１０を用いた本発明の第１実施形態の試料加工観察方法を、図１〜４を用いて説明する。
図２は、本発明の試料加工観察方法を段階的に示したフローチャートである。
本発明の試料加工観察方法によって観察対象部を含む試料片Ｓの観察断面を形成する際には、まず、観察対象部が含まれるバルクの試料Ｖを試料ホルダＰにセットして、ステージ１２上に載置する。観察対象部が含まれる試料Ｖとしては、例えば、微細な集積回路を形成した半導体チップなどが挙げられる。 (Sample processing and observation method: first embodiment)
A sample processing and observation method of the first embodiment of the present invention using the charged particle beam device 10 having the above-described configuration will be described with reference to FIGS.
FIG. 2 is a flow chart showing stepwise the sample processing and observation method of the present invention.
When the observation cross section of the sample piece S including the observation target portion is formed by the sample processing and observation method of the present invention, first, the bulk sample V including the observation target portion is set on the sample holder P and then on the stage 12. Place on. Examples of the sample V including the observation target portion include a semiconductor chip on which a fine integrated circuit is formed.

次に、ステージ１２上に載置された試料Ｖから、観察対象部を含む小領域を切り出して、試料片Ｓを作成する（試料片形成工程Ｓ１）。試料片形成工程Ｓ１では、集束イオンビーム鏡筒１４から試料Ｖに向けて集束イオンビーム（ＦＩＢ）、例えばガリウムイオンビームを照射する。この時、試料Ｖに予め設定された観察対象部を含む小領域の外縁に沿って集束イオンビーム（ＦＩＢ）を照射する。これにより、試料Ｖから、観察対象部を含む小領域を切り出した試料片Ｓが得られる。試料片Ｓは、例えば矩形の薄板状に形成される。   Next, a small area including the observation target portion is cut out from the sample V placed on the stage 12 to create a sample piece S (sample piece forming step S1). In the sample piece forming step S1, a focused ion beam (FIB), for example, a gallium ion beam is irradiated from the focused ion beam lens barrel 14 toward the sample V. At this time, the focused ion beam (FIB) is applied to the sample V along the outer edge of the small region including the observation target portion set in advance. As a result, the sample piece S obtained by cutting out the small region including the observation target portion from the sample V is obtained. The sample piece S is formed in a rectangular thin plate shape, for example.

次に、試料片支持体１９のニードル駆動機構１９ｂを操作して、ニードル１９ａの先端を、切り出した試料片Ｓの外面、例えばＳＥＭによる観察断面を形成する加工面（断面）に直角な側面に接触させる。   Next, the needle drive mechanism 19b of the sample piece support 19 is operated so that the tip of the needle 19a is moved to the outer surface of the cut sample piece S, for example, the side surface perpendicular to the processed surface (cross section) forming the observation cross section by SEM. Contact.

そして、ガス供給部１７のノズル１７ａからニードル１９ａと試料片Ｓとの接触部分に向けてデポジション用ガス、例えばカーボン系ガスを供給しつつ、この部分に集束イオンビーム鏡筒１４から集束イオンビーム（ＦＩＢ）を照射する。これにより、ニードル１９ａの先端と試料片Ｓとの接触部分にデポジション膜が形成される。こうしたデポジション膜によって、ニードル１９ａの先端と試料片Ｓとが接着され、試料片Ｓはニードル１９ａに支持される。   Then, while supplying a deposition gas, for example, a carbon-based gas, from the nozzle 17a of the gas supply unit 17 toward the contact portion between the needle 19a and the sample piece S, the focused ion beam lens barrel 14 focuses the focused ion beam on this portion. Irradiate (FIB). As a result, a deposition film is formed at the contact portion between the tip of the needle 19a and the sample piece S. By such a deposition film, the tip of the needle 19a and the sample piece S are adhered, and the sample piece S is supported by the needle 19a.

次に、集束イオンビーム（ＦＩＢ）によって、試料片Ｓに対してマッチング用マーク（１ポイントドリフト補正マーク）を形成する。マッチング用マークの形成位置は、次工程である断面加工工程Ｓ２で消滅しない位置に形成される。次に、試料片Ｓに加工面（断面）であるスライス加工枠を設定する。この時、ドリフト補正機能をセットする。   Next, a matching mark (1 point drift correction mark) is formed on the sample piece S by a focused ion beam (FIB). The matching mark is formed at a position that does not disappear in the cross-section processing step S2, which is the next step. Next, a slice processing frame which is a processing surface (cross section) is set on the sample piece S. At this time, the drift correction function is set.

次に、図３（ａ）に示すように、この試料片Ｓの加工面が、それぞれのビーム照射軸が１点で交差する交点Ｃに一致するように、試料片Ｓを支持するニードル１９ａを動かす。そして、例えば試料片Ｓの加工面（断面）に対して平行な方向に集束イオンビーム鏡筒１４から集束イオンビーム（ＦＩＢ）を照射して、試料片Ｓの加工面を所定の深さまで削る（断面加工工程Ｓ２）。   Next, as shown in FIG. 3A, the needle 19a supporting the sample piece S is placed so that the processed surface of the sample piece S coincides with the intersection C where the beam irradiation axes intersect at one point. move. Then, for example, the focused ion beam lens barrel 14 irradiates a focused ion beam (FIB) in a direction parallel to the processed surface (cross section) of the sample piece S, and the processed surface of the sample piece S is ground to a predetermined depth ( Section processing step S2).

次に、図３（ｂ）に示すように、試料片Ｓをニードル１９ａに保持させたまま、ニードル駆動機構１９ｂを介してニードル１９ａを操作し、試料片Ｓの加工面が交点Ｃよりも電子ビーム鏡筒１５の照射端に近接するように試料片Ｓを移動（図３（ｂ）中のＺ方向）させる（試料片近接移動工程Ｓ３）。すなわち、試料片Ｓの加工面に対する電子ビーム鏡筒１５のワーキングディスタンスが交点Ｃに比べて小さくなる位置に試料片Ｓを移動させる。   Next, as shown in FIG. 3B, while the sample piece S is held by the needle 19a, the needle 19a is operated via the needle drive mechanism 19b so that the processed surface of the sample piece S is more electron-shaped than the intersection point C. The sample piece S is moved (Z direction in FIG. 3B) so as to be close to the irradiation end of the beam barrel 15 (sample piece proximity moving step S3). That is, the sample piece S is moved to a position where the working distance of the electron beam lens barrel 15 with respect to the processed surface of the sample piece S is smaller than the intersection point C.

次に、図３（ｃ）に示すように、ニードル駆動機構１９ｂを介してニードル１９ａを回転させ、試料片Ｓの加工面（断面）が電子ビーム鏡筒１５のビーム光軸に対して直角になるように傾斜させる（試料片角度調節工程Ｓ４）。なお、ここで試料片Ｓの加工面（断面）と電子ビーム鏡筒１５のビーム光軸とは、９０°±５°範囲でほぼ直角になっていれば、後述するＳＥＭ画像の取得時に完全な直角（９０°）とほぼ同等の効果が得られる。   Next, as shown in FIG. 3 (c), the needle 19 a is rotated via the needle drive mechanism 19 b so that the processed surface (cross section) of the sample piece S is perpendicular to the beam optical axis of the electron beam lens barrel 15. The sample is tilted so that the sample piece angle is adjusted (S4). Here, if the processed surface (cross section) of the sample piece S and the beam optical axis of the electron beam lens barrel 15 are substantially perpendicular to each other within a range of 90 ° ± 5 °, it is possible to obtain a perfect SEM image at the time of acquisition, which will be described later. An effect almost equal to that of a right angle (90 °) is obtained.

次に、電子ビーム鏡筒１５のビーム光軸に対して加工面（断面）が直角に広がるようにされた試料片Ｓに向けて、電子ビーム鏡筒１５から電子ビーム（ＥＢ）を照射する。この時、前工程の試料片角度調節工程Ｓ４を経ることで、電子ビーム（ＥＢ）は、試料片Ｓの加工面（断面）に対してほとんど直角に入射する。そして、試料片Ｓの加工面（断面）から出た二次電子（二次荷電粒子）を検出器１６で検出し、検出器１６の出力信号に基づいて加工面（断面）のＳＥＭ画像をコンピュータ２２で形成し、表示装置２１に表示する（ＳＥＭ画像取得工程Ｓ５）。なお、ＳＥＭ画像取得工程Ｓ５においては、試料片Ｓのエッジ部分などでマッチングを行い、ＳＥＭ画像取得の際の中心位置を自動認識する。   Next, the electron beam (EB) is irradiated from the electron beam lens barrel 15 toward the sample piece S whose processing surface (cross section) is spread at right angles to the beam optical axis of the electron beam lens barrel 15. At this time, the electron beam (EB) is incident almost at right angles to the processed surface (cross section) of the sample piece S through the sample piece angle adjusting step S4 of the previous step. Then, the detector 16 detects secondary electrons (secondary charged particles) emitted from the processed surface (cross section) of the sample piece S, and the SEM image of the processed surface (cross section) is calculated by the computer based on the output signal of the detector 16. 22 and display it on the display device 21 (SEM image acquisition step S5). In the SEM image acquisition step S5, matching is performed at the edge portion of the sample piece S and the center position at the time of acquiring the SEM image is automatically recognized.

このように、試料片近接移動工程Ｓ３を経た試料片Ｓの加工面（断面）のＳＥＭ画像は、従来のように、試料片Ｓの加工面（断面）が交点Ｃの位置にある状態で得られたＳＥＭ画像と比較して、試料片Ｓの加工面（断面）の位置がより電子ビーム鏡筒１５に近接した位置でのＳＥＭ画像であるので、加工面（断面）の様子がより一層鮮明になり、拡大倍率を上げても細部まで鮮明に映し出すことができる。従って、観察対象物の構造が微細で複雑な試料片Ｓであっても、加工面（断面）の状態を正確に把握することができる。   As described above, the SEM image of the processed surface (cross section) of the sample piece S that has undergone the sample piece proximity moving step S3 is obtained in a state where the processed surface (cross section) of the sample piece S is at the position of the intersection C as in the conventional case. Compared with the obtained SEM image, the processed surface (cross section) of the sample piece S is an SEM image at a position closer to the electron beam lens barrel 15, so that the processed surface (cross section) is much clearer. Therefore, even if the magnification is increased, the details can be clearly displayed. Therefore, even if the observation target is a fine and complicated sample piece S, the state of the processed surface (cross section) can be accurately grasped.

また、試料片角度調節工程Ｓ４によって、試料片Ｓの加工面（断面）と電子ビーム鏡筒１５のビーム光軸とが直角になるように試料片Ｓを動かす（回転させる）ことによって、ＳＥＭ画像取得工程Ｓ５で得られる加工面（断面）のＳＥＭ画像は、従来のように電子ビーム鏡筒１５のビーム光軸に対して直角よりも傾斜した（例えば５４°）状態でのＳＥＭ画像と比較して、上下方向に収縮が殆どない。これにより、得られたＳＥＭ画像をソフトウエア的に画像加工することなく、加工面（断面）の形状を歪みなく正確に反映されたＳＥＭ画像を得ることができる。   Further, in the sample piece angle adjusting step S4, the sample piece S is moved (rotated) so that the processed surface (cross section) of the sample piece S and the beam optical axis of the electron beam lens barrel 15 are perpendicular to each other, so that the SEM image is obtained. The SEM image of the processed surface (cross section) obtained in the acquisition step S5 is compared with the SEM image in a state inclined (for example, 54 °) with respect to the beam optical axis of the electron beam lens barrel 15 as in the conventional case. And there is almost no vertical contraction. This makes it possible to obtain an SEM image in which the shape of the processed surface (cross section) is accurately reflected without distortion, without performing image processing on the obtained SEM image by software.

この後、ＳＥＭ画像取得工程Ｓ５で得られる加工面（断面）の様子を確認し、再び断面加工工程Ｓ２からＳＥＭ画像取得工程Ｓ５までを、所望の加工面（断面）が得られるまで繰り返す。試料片Ｓが集束イオンビーム（ＦＩＢ）による加工位置に戻った際には、ドリフト補正マークの認識を実行する。   After that, the state of the processed surface (cross section) obtained in the SEM image acquisition step S5 is confirmed, and the section processing step S2 to the SEM image acquisition step S5 are repeated until the desired processed surface (cross section) is obtained. When the sample piece S returns to the processing position by the focused ion beam (FIB), the drift correction mark is recognized.

また、断面加工工程Ｓ２からＳＥＭ画像取得工程Ｓ５までを、予め設定した所望の回数繰り返し、試料片Ｓの特定領域における連続した複数の断面のＳＥＭ画像を取得して、試料片Ｓの特定領域の立体像を生成することもできる。つまり、少なくとも、断面加工工程Ｓ２において試料片Ｓを交点Ｃに移動させ、加工面をスライス加工し、試料片近接移動工程Ｓ３において試料片Ｓを交点Ｃよりも電子ビーム鏡筒１５の照射端に近接するように移動させ、ＳＥＭ画像取得工程Ｓ５においてＳＥＭ画像を取得するプロセスを繰り返し実施する。コンピュータ２２は、加工位置と観察位置との間を試料片Ｓが往復するようにニードル駆動機構１９ｂを制御する。これにより、試料片の連続的な断面加工観察を実施することができる。また、断面加工観察により取得した情報に基づき断面工観察を施した領域の立体像を生成することができる。   Further, the cross-section processing step S2 to the SEM image acquisition step S5 are repeated a preset number of times to obtain SEM images of a plurality of continuous cross-sections in a specific region of the sample piece S, and It is also possible to generate a stereoscopic image. That is, at least in the cross-section processing step S2, the sample piece S is moved to the intersection C, the processed surface is sliced, and in the sample piece proximity moving step S3, the sample piece S is positioned more toward the irradiation end of the electron beam lens barrel 15 than the intersection point C. The process is moved so as to be close to each other, and the process of acquiring the SEM image in the SEM image acquisition step S5 is repeatedly performed. The computer 22 controls the needle drive mechanism 19b so that the sample piece S reciprocates between the processing position and the observation position. Thereby, continuous cross-section processing observation of the sample piece can be performed. In addition, it is possible to generate a stereoscopic image of the area subjected to the cross-section observation based on the information acquired by the cross-section processing observation.

ＳＥＭ画像取得工程Ｓ５から断面加工工程Ｓ２に移行する際には、試料片Ｓをニードル１９ａに固定したまま、試料片角度調節工程Ｓ４の逆回転操作を行い、続けて試料片近接移動工程Ｓ３の逆行操作を行えばよい。   When shifting from the SEM image acquisition step S5 to the cross-section processing step S2, the sample piece S is fixed to the needle 19a, the reverse rotation operation of the sample piece angle adjusting step S4 is performed, and then the sample piece proximity moving step S3 is performed. A reverse operation may be performed.

以上のように、本発明の試料加工観察方法によれば、このように、試料片Ｓの加工面（断面）の加工とＳＥＭ画像による観察とを、試料片Ｓをニードル１９ａに固定したまま行うことができるので、試料片Ｓを例えば専用ステージに移動させることなく観察することができ、作業時間を大幅に短縮できる。   As described above, according to the sample processing and observation method of the present invention, the processing of the processed surface (cross section) of the sample piece S and the observation by the SEM image are thus performed while the sample piece S is fixed to the needle 19a. Therefore, the sample piece S can be observed without moving it to, for example, a dedicated stage, and the working time can be significantly shortened.

また、試料片Ｓをニードル１９ａに固定したままＳＥＭ画像による観察ができるので、観察位置付近でニードル１９ａよりも体積の大きい専用のステージを用いた場合よりも電界分布の変化が小く抑えられる。よって、取得したＳＥＭ画像のコントラストの低下を防止でき、高コントラストの鮮明なＳＥＭ画像を得ることができる。   Further, since the SEM image can be observed while the sample piece S is fixed to the needle 19a, the change in the electric field distribution can be suppressed smaller than in the case where a dedicated stage having a larger volume than the needle 19a is used near the observation position. Therefore, the contrast of the acquired SEM image can be prevented from being lowered, and a clear SEM image with high contrast can be obtained.

上述した第１実施形態の試料加工観察方法の変形例として、集束イオンビーム（ＦＩＢ）を用いた断面加工工程Ｓ２の完了後に、気体イオンビーム鏡筒１８から気体イオンビーム（ＧＢ）、例えばアルゴンイオンビームを照射して、試料片Ｓの加工面（断面）の仕上げ加工を行うことも好ましい（図４参照）。   As a modified example of the sample processing and observation method of the first embodiment described above, after completion of the cross-section processing step S2 using a focused ion beam (FIB), a gas ion beam (GB), eg, argon ions, is emitted from the gas ion beam column 18. It is also preferable to irradiate the beam to finish the processing surface (cross section) of the sample piece S (see FIG. 4).

気体イオンビーム鏡筒１８は、アルゴンガスをイオン化して、例えば、１．０ｋｅＶ程度の低加速電圧で照射することができる。こうしたアルゴンイオンビームは、ガリウムイオンビームなどの集束イオンビーム（ＦＩＢ）に比べて集束性が低いため、試料片Ｓの加工面（断面）に対するエッチングレートが低くなる。従って、アルゴンイオンビームは、ガリウムイオンビームによって試料片Ｓの加工面（断面）の加工を行った後の精密な仕上げ加工に好適である。   The gas ion beam column 18 can ionize argon gas and irradiate it with a low acceleration voltage of, for example, about 1.0 keV. Since such an argon ion beam has a lower focusing property than a focused ion beam (FIB) such as a gallium ion beam, the etching rate for the processed surface (cross section) of the sample piece S becomes low. Therefore, the argon ion beam is suitable for precise finishing after the processing surface (cross section) of the sample piece S is processed by the gallium ion beam.

このように、気体イオンビーム（ＧＢ）によって試料片Ｓの加工面（断面）の仕上げ加工を行うことによって、ＳＥＭ画像取得工程Ｓ５で得られる加工面（断面）のＳＥＭ画像をより鮮明なものにすることができる。   In this way, by finishing the processed surface (cross section) of the sample piece S with the gas ion beam (GB), the SEM image of the processed surface (cross section) obtained in the SEM image acquisition step S5 becomes clearer. can do.

（試料加工観察方法：第２実施形態）
ＳＥＭ画像の高分解能化のために、電子ビーム鏡筒１５と試料片Ｓとの間に電子レンズを形成させるセミインレンズ方式の電子ビーム鏡筒１５を用いる場合、電子レンズの磁場が電子ビーム鏡筒１５の外側に生じるために、断面加工工程Ｓ２で試料片Ｓを集束イオンビーム（ＦＩＢ）で加工する際に、特に低加速の集束イオンビーム（ＦＩＢ）は、電子ビーム鏡筒１５の電子レンズの磁場によってビーム軌道が曲がったり、ビーム形状が歪んだりする虞がある。 (Sample processing observation method: second embodiment)
In order to improve the resolution of the SEM image, when a semi-in-lens type electron beam lens barrel 15 in which an electron lens is formed between the electron beam lens barrel 15 and the sample piece S is used, the magnetic field of the electron lens is an electron beam mirror. When the sample piece S is processed by the focused ion beam (FIB) in the cross-section processing step S2 because it is generated outside the cylinder 15, the focused ion beam (FIB) with a particularly low acceleration is generated by the electron lens of the electron beam lens barrel 15. There is a possibility that the beam orbit may be bent or the beam shape may be distorted due to the magnetic field.

このため、第２実施形態では、断面加工工程Ｓ２において、ステージ駆動機構１３を操作してステージ１２を、ニードル１９ａに保持された試料片Ｓに接近させる（図５（ａ）参照）。ステージ１２は、集束イオンビーム（ＦＩＢ）のビーム軌道を中心に磁場が概ね対称になるように配置すればよい。   Therefore, in the second embodiment, in the cross-section processing step S2, the stage drive mechanism 13 is operated to bring the stage 12 close to the sample piece S held by the needle 19a (see FIG. 5A). The stage 12 may be arranged so that the magnetic field is substantially symmetrical about the beam orbit of the focused ion beam (FIB).

同様に、ＳＥＭ画像取得工程Ｓ５においても、ステージ駆動機構１３を操作してステージ１２を、ニードル１９ａに保持された試料片Ｓに接近させる（図５（ｂ）参照）。これによって、電子ビーム（ＥＢ）に対して磁場が適切な分布になるように制御できる。ステージ１２は、電子ビーム（ＥＢ）のビーム軌道を中心に磁場が概ね対称になるように配置すればよい。   Similarly, also in the SEM image acquisition step S5, the stage drive mechanism 13 is operated to bring the stage 12 close to the sample piece S held by the needle 19a (see FIG. 5B). This makes it possible to control the magnetic field to have an appropriate distribution with respect to the electron beam (EB). The stage 12 may be arranged so that the magnetic field is substantially symmetrical about the beam orbit of the electron beam (EB).

（試料加工観察方法：第３実施形態）
第３実施形態では、断面加工工程Ｓ２において、試料片Ｓに対して額縁加工を行う。即ち、図６（ａ）に示すように、試料片Ｓの一方に向けて第１の照射角度から集束イオンビーム（ＦＩＢ）を照射し、試料片Ｓの矩形の加工面（断面）の３辺を所定幅で額縁状に周縁部分を残し（額縁部Ｓａ）、その内側を薄膜化（薄膜部Ｓｂ）する。 (Sample processing observation method: third embodiment)
In the third embodiment, frame processing is performed on the sample piece S in the cross-section processing step S2. That is, as shown in FIG. 6A, the focused ion beam (FIB) is irradiated from one of the first irradiation angles toward one side of the sample piece S, and the three sides of the rectangular processed surface (cross section) of the sample piece S are irradiated. Is left in a frame shape with a predetermined width (frame portion Sa), and the inside is thinned (thin film portion Sb).

次に、図６（ｂ）に示すように、ニードル１９ａを回転させて試料片Ｓの表裏を逆にして、第２の照射角度から集束イオンビーム（ＦＩＢ）を照射し、試料片Ｓの矩形の加工面（断面）の３辺を所定幅で額縁状に残し（額縁部Ｓｃ）、その内側を薄膜化（薄膜部Ｓｄ）する（図６（ｂ）参照）。   Next, as shown in FIG. 6B, the needle 19a is rotated to reverse the front and back of the sample piece S, and the focused ion beam (FIB) is irradiated from the second irradiation angle to form a rectangle of the sample piece S. The three sides of the processed surface (cross section) are left in a frame shape with a predetermined width (frame portion Sc), and the inside thereof is thinned (thin film portion Sd) (see FIG. 6B).

このような第３実施形態によれば、試料片Ｓの一部だけを薄膜化し、その周囲を額縁部として薄膜化しない部分を残すことで、一部を薄膜化した試料の強度を保つことができる。そして、試料片Ｓの表裏で異なる方向から額縁加工することで、薄片部の全ての周囲を額縁化できるので試料の強度を保つことができ、かつ、試料片にカーテン効果による縞が形成されることを抑制できる。   According to the third embodiment as described above, only a part of the sample piece S is thinned, and the periphery of the sample piece S is used as a frame portion to leave a portion which is not thinned, so that the strength of the thinned sample can be maintained. it can. Frame processing is performed on the front and back sides of the sample piece S from different directions, so that the entire periphery of the thin piece portion can be framed, so that the strength of the sample can be maintained, and stripes due to the curtain effect are formed on the sample piece. Can be suppressed.

（試料加工観察方法：第４実施形態）
第４実施形態は、試料片支持体１９を２つ備えた荷電粒子ビーム装置１０を用いた例であり、互いに離間して配置された２つのニードル１９ａ１，１９ａ２を有する（図７参照）。まず、第１のニードル１９ａ１で試料片Ｓを保持する。 (Sample Processing Observation Method: Fourth Embodiment)
The fourth embodiment is an example in which the charged particle beam device 10 provided with two sample piece supports 19 is used, and has two needles 19a1 and 19a2 arranged apart from each other (see FIG. 7). First, the sample piece S is held by the first needle 19a1.

そして、試料片Ｓを第２のニードル１９ａ２に移し変え、第２のニードル１９ａ２を回転させることにより、試料片Ｓへの集束イオンビーム（ＦＩＢ）の入射角度を変更する（図７（ａ）参照）。図７（ｂ）に示すように、第２のニードル１９ａ２を、電子ビーム（ＥＢ）のビーム光軸と、集束イオンビーム（ＦＩＢ）のビーム光軸のなす面の法線方向に平行になるように配置する。   Then, the sample piece S is transferred to the second needle 19a2, and the second needle 19a2 is rotated to change the incident angle of the focused ion beam (FIB) to the sample piece S (see FIG. 7A). ). As shown in FIG. 7B, the second needle 19a2 is made parallel to the normal line of the plane formed by the beam optical axis of the electron beam (EB) and the beam optical axis of the focused ion beam (FIB). To place.

まず、第１のニードル１９ａ１で試料片Ｓを支持した状態で、第１の入射角度で集束イオンビーム（ＦＩＢ）を照射してＦＩＢ加工を行う（図８（ａ）参照）。次に、第２のニードル１９ａ２を試料片Ｓに接続する（図８（ｂ）参照）。次に、第１のニードル１９ａ１から試料片Ｓを分離し、第２のニードル１９ａ２を回転させる（図８（ｃ）参照）。そして、第１の入射角度で集束イオンビーム（ＦＩＢ）を照射してＦＩＢ加工を行う（図８（ｄ）参照）。   First, with the sample piece S supported by the first needle 19a1, the focused ion beam (FIB) is irradiated at the first incident angle to perform FIB processing (see FIG. 8A). Next, the second needle 19a2 is connected to the sample piece S (see FIG. 8B). Next, the sample piece S is separated from the first needle 19a1 and the second needle 19a2 is rotated (see FIG. 8C). Then, a focused ion beam (FIB) is irradiated at the first incident angle to perform FIB processing (see FIG. 8D).

このような第４実施形態の試料加工観察方法によれば、第２のニードル１９ａ２は集束イオンビーム（ＦＩＢ）のビーム光軸に対して、垂直方向を中心に回転可能であるため、集束イオンビーム（ＦＩＢ）の試料片Ｓに対する入射角度の調整が容易になり、試料片Ｓの加工容易性を高めることができる。   According to the sample processing and observation method of the fourth embodiment as described above, the second needle 19a2 is rotatable about the vertical direction with respect to the beam optical axis of the focused ion beam (FIB). The incidence angle of (FIB) with respect to the sample piece S can be easily adjusted, and the workability of the sample piece S can be improved.

本発明の実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。   Although the embodiments of the present invention have been described, the embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the invention described in the claims and the equivalents thereof as well as included in the scope and the gist of the invention.

１０…荷電粒子ビーム装置、１１…試料室、１２…ステージ（試料ステージ）、１３…ステージ駆動機構、１４…集束イオンビーム鏡筒、１５…電子ビーム鏡筒、１６…検出器、１７…ガス供給部、１８…気体イオンビーム鏡筒、１９ａ…ニードル、１９ｂ…ニードル駆動機構、２１…表示装置、２２…コンピュータ、２３…入力デバイス、３３…試料台、Ｐ…試料ホルダ、Ｒ…二次荷電粒子、Ｓ…試料片、Ｖ…試料。   10 ... Charged particle beam device, 11 ... Sample chamber, 12 ... Stage (sample stage), 13 ... Stage drive mechanism, 14 ... Focused ion beam column, 15 ... Electron beam column, 16 ... Detector, 17 ... Gas supply Part, 18 ... Gas ion beam column, 19a ... Needle, 19b ... Needle drive mechanism, 21 ... Display device, 22 ... Computer, 23 ... Input device, 33 ... Sample stand, P ... Sample holder, R ... Secondary charged particles , S ... sample piece, V ... sample.

Claims (10)

集束イオンビームを照射する集束イオンビーム鏡筒と、電子ビームを照射する電子ビーム鏡筒と、試料を載置するステージと、前記試料から切り出された観察対象部を含む試料片を保持する試料片支持体と、前記集束イオンビーム鏡筒、前記電子ビーム鏡筒、前記ステージおよび前記試料片支持体の動作を制御する制御部と、を備え、
前記制御部は、前記試料の観察対象部を含む断面のＳＥＭ画像を取得する際に、前記集束イオンビームのビーム光軸と前記電子ビームのビーム光軸との交点よりも前記電子ビーム鏡筒に近接する位置まで前記試料片を移動させる制御を行うことを特徴とする荷電粒子ビーム装置。 A focused ion beam column for irradiating a focused ion beam, an electron beam column for irradiating an electron beam, a stage for mounting a sample, and a sample piece for holding a sample piece including an observation target portion cut out from the sample A support; and a control unit that controls the operations of the focused ion beam column, the electron beam column, the stage, and the sample piece support,
When acquiring a SEM image of a cross section including the observation target portion of the sample, the control unit causes the electron beam lens barrel to move to the electron beam barrel rather than the intersection of the beam optical axis of the focused ion beam and the beam optical axis of the electron beam. A charged particle beam device, characterized in that control is performed to move the sample piece to a position in proximity to it. 前記制御部は、前記集束イオンビームによって前記断面を形成する際に、前記交点に前記試料片を移動させる制御を行うことを特徴とする請求項１記載の荷電粒子ビーム装置。   The charged particle beam apparatus according to claim 1, wherein the control unit performs control to move the sample piece to the intersection when the cross section is formed by the focused ion beam. 前記制御部は、前記断面に前記集束イオンビームを照射して前記断面の加工を行う際、前記試料の観察対象部を含む断面のＳＥＭ画像を取得する際、の少なくともいずれか一方において、前記ステージを前記試料片に向けて接近動作させる制御を行うことを特徴とする請求項１または２記載の荷電粒子ビーム装置。   The control unit is configured to irradiate the focused ion beam to the cross section to process the cross section, and to acquire an SEM image of a cross section including an observation target part of the sample, in at least one of the stages. 3. The charged particle beam device according to claim 1, wherein the charged particle beam device is controlled so as to approach the sample piece. 集束イオンビームを照射する集束イオンビーム鏡筒と、電子ビームを照射する電子ビーム鏡筒と、試料から切り出された観察対象部を含む試料片を保持する試料片支持体と、を備えた荷電粒子ビーム装置を用いて、前記試料の観察対象部を含む断面の加工およびＳＥＭ画像を得る試料加工観察方法であって、
前記集束イオンビームを前記試料に照射して、前記試料から前記試料片を切り出す試料片形成工程と、
前記試料片を前記試料片支持体で支持し、前記試料片の前記断面に前記集束イオンビームを照射して、前記断面の加工を行う断面加工工程と、
前記試料片を前記試料片支持体で支持し、前記集束イオンビームのビーム光軸と前記電子ビームのビーム光軸との交点よりも前記電子ビーム鏡筒に近接する位置まで前記試料片を移動させる試料片近接移動工程と、
前記試料片の前記断面に向けて前記電子ビームを照射して、前記断面のＳＥＭ画像を取得するＳＥＭ画像取得工程と、
を備えたことを特徴とする試料加工観察方法。 Charged particles including a focused ion beam column for irradiating a focused ion beam, an electron beam column for irradiating an electron beam, and a sample piece support for holding a sample piece including an observation target portion cut out from a sample, A sample processing and observation method for obtaining a SEM image by processing a cross section of the sample including an observation target portion using a beam device,
Irradiating the sample with the focused ion beam, a sample piece forming step of cutting out the sample piece from the sample,
A cross-section processing step of supporting the sample piece with the sample piece support, irradiating the cross-section of the sample piece with the focused ion beam, and processing the cross-section,
The sample piece is supported by the sample piece support, and the sample piece is moved to a position closer to the electron beam lens barrel than the intersection of the beam optical axis of the focused ion beam and the beam optical axis of the electron beam. Sample piece proximity moving step,
SEM image acquisition step of acquiring the SEM image of the cross section by irradiating the electron beam toward the cross section of the sample piece,
A sample processing and observing method comprising: 前記試料片を前記試料片支持体で支持し、前記試料片の前記断面が前記電子ビームのビーム光軸に対して直角になるように傾斜させる試料片角度調節工程を更に備えたことを特徴とする請求項４記載の試料加工観察方法。   Further comprising a sample piece angle adjusting step of supporting the sample piece by the sample piece support and inclining the sample piece so that the cross section of the sample piece is perpendicular to the beam optical axis of the electron beam. The sample processing and observation method according to claim 4. 前記試料片にドリフト補正マークを形成する補正マーク形成工程を更に備えたことを特徴とする請求項４または５記載の試料加工観察方法。   The sample processing and observation method according to claim 4, further comprising a correction mark forming step of forming a drift correction mark on the sample piece. 前記試料片角度調節工程は、複数の前記試料片支持体どうしの間で前記試料片を受け渡して行うことを特徴とする請求項５記載の試料加工観察方法。   The sample processing and observation method according to claim 5, wherein the sample piece angle adjusting step is performed by passing the sample piece between a plurality of the sample piece supports. 前記断面加工工程またはＳＥＭ画像取得工程の少なくともいずれか一方では、前記試料を載置するステージを前記試料片に向けて接近動作させることを特徴とする請求項４ないし７いずれか一項記載の試料加工観察方法。   The sample according to any one of claims 4 to 7, wherein a stage on which the sample is mounted is moved toward the sample piece in at least one of the cross-section processing step and the SEM image acquisition step. Processing observation method. 前記断面加工工程では、前記試料片の周縁部分の少なくとも一部よりも内側だけを薄膜化させることを特徴とする請求項４ないし８いずれか一項記載の試料加工観察方法。   9. The sample processing and observing method according to claim 4, wherein in the cross-section processing step, only the inside of at least a part of the peripheral portion of the sample piece is thinned. 前記断面加工工程から前記試料片近接移動工程を経て前記画像取得工程までを、予め設定した回数繰り返すことを特徴とする請求項４ないし９いずれか一項記載の試料加工観察方法。   10. The sample processing and observation method according to claim 4, wherein the cross-section processing step, the sample piece proximity moving step, and the image acquisition step are repeated a preset number of times.
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