JP2020064706A - Plasma processing apparatus and cooker - Google Patents

Plasma processing apparatus and cooker Download PDF

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JP2020064706A
JP2020064706A JP2018193932A JP2018193932A JP2020064706A JP 2020064706 A JP2020064706 A JP 2020064706A JP 2018193932 A JP2018193932 A JP 2018193932A JP 2018193932 A JP2018193932 A JP 2018193932A JP 2020064706 A JP2020064706 A JP 2020064706A
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plasma
magnetic field
gas
processing apparatus
high frequency
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芳弘 阪本
Yoshihiro Sakamoto
芳弘 阪本
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Panasonic Intellectual Property Management Co Ltd
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Abstract

To solve the problem that, since generated plasma is injected in a gaseous state and a gas in a plasma state is radiated inside of a heating chamber, a density of plasma is reduced as farther from a plasma part or since the gaseous plasma is not efficiently in contact with a processed part by being influenced by a ventilation part, it is difficult to adjust grilling and there is no means for correction in a case where the ventilation part is included in a device.SOLUTION: A plasma processing apparatus comprises: a processed part 9 disposed in an inside part 5; a high frequency oscillation part 1 which supplies and oscillates high frequency power; a gas generation part 4 which supplies and generates a gas; and a waveguide part 2 by generating plasma by mixing the high frequency power from the high frequency oscillation part 1 and the gas from the gas generation part 4. A magnetic field generation part 6 is provided in the inside part 5, the waveguide part 2 injects the plasma into the inside part 5, and the magnetic field generation part 6 radiates a magnetic field to the processed part 9, thereby accumulating plasma around the magnetic field in an intensive and aggregated manner.SELECTED DRAWING: Figure 1

Description

本発明は、磁界発生部およびガス発生部を備えたプラズマ処理装置とこの装置を備えた調理器に関するものである。   The present invention relates to a plasma processing apparatus having a magnetic field generating section and a gas generating section, and a cooker provided with this apparatus.

従来、この種のプラズマ処理装置は、電子レンジ内に併設したプラズマ発生部にマイクロ波とガスを用いてプラズマを発生させて、吹き出し型プラズマとして、飲食品の表面を高速に直接加熱していた（例えば、特許文献１参照）。また、ガスとして水蒸気を用いることで、従来の水蒸気や加熱水蒸気を用いた加熱装置と比べて小型化でき、かつ電子レンジ機能と併用し、プラズマを用いた電磁波加熱装置がある（例えば、特許文献２参照）。   Conventionally, this type of plasma processing apparatus uses a microwave and a gas to generate plasma in a plasma generation unit provided in a microwave oven, and directly heats the surface of food and drink at a high speed as a blowing plasma. (For example, refer to Patent Document 1). In addition, by using water vapor as a gas, there is an electromagnetic wave heating device that can be downsized as compared with a conventional heating device that uses steam or heated steam, and that uses plasma in combination with a microwave oven function (for example, Patent Document 1 2).

特開２００７−２９５９０９号公報JP, 2007-295909, A 国際公開第２０１７／０２２７１３号International Publication No. 2017/022713

しかしながら、従来のプラズマ発生方式を用いた構成では、発生したプラズマがガス状に噴出され、加熱室内にプラズマ状態のガスを供給するが、加熱室に設置された換気装置や熱の対流などにより、加熱室の気流が変化しプラズマ状態のガスも拡散するため、安定的な焼き加減の調整が困難となる。また、プラズマの密度にムラが生じた場合、プラズマ密度の分布を修正する手段がないという課題を有していた。   However, in the configuration using the conventional plasma generation method, the generated plasma is ejected in a gas state and the gas in the plasma state is supplied to the heating chamber, but due to the ventilation device installed in the heating chamber and heat convection, Since the gas flow in the heating chamber changes and the gas in the plasma state diffuses, it becomes difficult to adjust the baking amount stably. Further, there is a problem that there is no means for correcting the plasma density distribution when the plasma density becomes uneven.

本発明は、前記従来の課題を解決するもので、被処理部近傍に磁界発生部を有し、発生した磁界により、拡散されたプラズマを集めることができるため、前記被処理部の近傍にプラズマを集中させることができ、これにより加熱精度を高めたプラズマ処理装置を提供することを目的とする。   The present invention is to solve the above-mentioned conventional problems, and has a magnetic field generation unit in the vicinity of the processing target portion, and since the diffused plasma can be collected by the generated magnetic field, plasma is generated in the vicinity of the processing target portion. Therefore, it is an object of the present invention to provide a plasma processing apparatus in which the heating accuracy can be improved.

前記従来の課題を解決するために、本発明のプラズマ処理装置は、被処理部近傍に磁界発生手段を有し、発生された磁界により拡散されたプラズマを集めることができるため、前記被処理部の近傍にプラズマを集中させることができ、これにより加熱精度を高めたプラズマ処理装置を提供することができる。   In order to solve the conventional problems, the plasma processing apparatus of the present invention has a magnetic field generating means in the vicinity of the portion to be processed and can collect the plasma diffused by the generated magnetic field. The plasma can be concentrated in the vicinity of, and thus a plasma processing apparatus with improved heating accuracy can be provided.

本発明のプラズマ処理装置は、効率的で、処理する範囲を制御でき、加熱精度を向上して、被処理部を高速に焼き上げる調理ができる。   INDUSTRIAL APPLICABILITY The plasma processing apparatus of the present invention is efficient, can control the range to be processed, improves the heating accuracy, and can perform cooking by baking the processed portion at high speed.

本発明の実施の形態１におけるプラズマ処理装置の構成図Configuration diagram of a plasma processing apparatus according to Embodiment 1 of the present invention 本発明の実施の形態１におけるプラズマ処理装置の磁界により保持されるプラズマの詳細説明図Detailed explanatory drawing of the plasma hold | maintained by the magnetic field of the plasma processing apparatus in Embodiment 1 of this invention. 本発明の実施の形態２におけるプラズマ処理装置の換気部によるプラズマの変化例を示す説明図Explanatory drawing which shows the example of a change of plasma by the ventilation part of the plasma processing apparatus in Embodiment 2 of this invention. 本発明の実施の形態２におけるプラズマ処理装置の磁界によりプラズマエリアを保持した状態を示す構成図Configuration diagram showing a state in which a plasma area is held by a magnetic field of a plasma processing apparatus in Embodiment 2 of the present invention

第１の発明は、
庫内部に配置された被処理部と、高周波電力を供給発振する高周波発振部と、ガスを供給発生する手段ガス発生部と、前記高周波発振部からの高周波電力をと前記ガス発生部からのガスとを混合してプラズマを生成する導波管路部と、を備え、前記庫内部には磁界発生部が設けられ、前記導波路部は前記庫内部内へプラズマを噴出し、前記磁界発生部は前記被処理部へ磁界を放射することにより、プラズマを磁界周辺に集約、凝集して留めることができる。 The first invention is
A portion to be processed arranged inside the chamber, a high-frequency oscillator for supplying and oscillating high-frequency power, a means for generating and supplying gas, a gas generator, a high-frequency power from the high-frequency oscillator, and a gas from the gas generator. And a waveguide for generating plasma, and a magnetic field generating section is provided inside the storage, the waveguide ejects plasma into the storage, and the magnetic field generating section is provided. By radiating a magnetic field to the portion to be processed, the plasma can be concentrated around the magnetic field and aggregated and retained.

第２の発明は、前記磁気発生部は、前記被処理部の近傍に配置されたことにより、被処理部周辺に磁界を供給することができる。また、プラズマは磁界の磁力線とともに動く性質を有することから、被処理部周辺にプラズマを保持させて、効率よく被加熱物を所望の状態に加熱することができる。   According to a second aspect, the magnetic field generation unit is arranged in the vicinity of the processing target portion, so that the magnetic field can be supplied to the periphery of the processing target portion. Further, since the plasma has a property of moving along with the magnetic force lines of the magnetic field, the plasma can be held around the portion to be processed and the object to be heated can be efficiently heated to a desired state.

第３の発明は、前記磁気発生部は、前記被処理部を囲むように磁界を放射させることにより、プラズマは磁界の磁力線とともに動く性質を有することから、被処理部周辺にプラズマを保持させて、被処理部を覆うように磁界を発生させることにより効率よく被加熱物を所望の状態に加熱することができる。   In a third aspect of the invention, the magnetism generating unit emits a magnetic field so as to surround the processing target portion, so that the plasma has a property of moving together with magnetic force lines of the magnetic field. By generating a magnetic field so as to cover the portion to be processed, the object to be heated can be efficiently heated to a desired state.

第４の発明は、前記庫内部に放射されたプラズマは、前記磁界発生部から放射された磁界と
対向していることにより、放射されたプラズマを磁界で効率よく保持でき被処理部に供給させることができる。 In a fourth aspect of the present invention, the plasma radiated inside the chamber is opposed to the magnetic field radiated from the magnetic field generation unit, so that the radiated plasma can be efficiently held by the magnetic field and supplied to the processing target portion. be able to.

第５の発明は、前記磁界発生部から放射された磁界が、前記庫内部に放射されたプラズマの領域と重なっていることにより、重なっている領域内において磁界によりプラズマを捉え保持させることができる。   In a fifth aspect of the present invention, the magnetic field emitted from the magnetic field generation unit overlaps the region of the plasma emitted inside the chamber, so that the plasma can be captured and held by the magnetic field in the overlapping region. .

第６の発明は、前記被処理部が食品であることにより、プラズマの熱効果や親水性効果により、被処理部である食品表面を高速で焼くとともに味も染込み易い食品調理をすることができる。   A sixth aspect of the invention is that, because the treated portion is a food, the food surface that is the treated portion is baked at a high speed and the food can be easily seasoned due to the thermal effect and the hydrophilic effect of plasma. it can.

第７の発明は、第１から第６の発明において、庫内部の被処理物を加熱する調理器であり、磁界の影響でプラズマを食品周辺に保持させて、効率よく被処理物を調理することができる。   7th invention is a cooker which heats the to-be-processed object in 1st-6th invention, WHEREIN: Plasma is hold | maintained to the food periphery by the influence of a magnetic field, and an to-be-processed object is cooked efficiently. be able to.

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施の形態によって本発明が限定されるものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to this embodiment.

（実施の形態１）
図１は、本発明の第１の実施の形態におけるプラズマ処理装置の構成図である。 (Embodiment 1)
FIG. 1 is a configuration diagram of a plasma processing apparatus according to the first embodiment of the present invention.

図１において、庫内部５の天面壁の外側には、導波路部２が設けられている。高周波発振部１は、図示しない制御部からの信号を入力して、マイクロ波を発振し、導波路部２へ高周波電力を供給する。
なお、高周波発振部１は、例えば、発振器と半導体素子による増幅器で構成してもよいし、マグネトロンで構成してもよい。 In FIG. 1, the waveguide section 2 is provided outside the top wall of the inside 5 of the refrigerator. The high-frequency oscillator 1 receives a signal from a controller (not shown), oscillates microwaves, and supplies high-frequency power to the waveguide 2.
The high-frequency oscillator 1 may be composed of, for example, an oscillator and an amplifier of a semiconductor element, or a magnetron.

庫内部５内の下部に、例えば食品である被処理部９が配置されている。そして、被処理
部９の真下には、磁界発生部６が設けられ、前記制御部からの信号を入力して、被処理部９へ磁界を放射している。 In the lower part of the inside 5 of the storage, a processed part 9 such as food is arranged. A magnetic field generation unit 6 is provided immediately below the processing target 9, and inputs a signal from the control unit to radiate a magnetic field to the processing target 9.

また、ガス発生部４はガスを発生し、ガス供給部３を介して、導波路部２内へガスを供給する。導波路部２内において、ガスとマイクロ波が合成され、プラズマが生成される。生成されたプラズマは、ガス発生部４におけるガスの流速により庫内部５に噴出され、プラズマ部７を構成するとともに、ガスの流速に応じてプラズマエリア８の範囲は調整され、庫内部５内に放射される。ここで、ガス発生部４で使われるガスは、例えば、空気、水蒸気、アルゴン等である。   Further, the gas generating unit 4 generates gas and supplies the gas into the waveguide unit 2 via the gas supply unit 3. In the waveguide section 2, gas and microwaves are combined to generate plasma. The generated plasma is ejected into the inside 5 of the chamber due to the flow velocity of the gas in the gas generating unit 4, constitutes the plasma unit 7, and the range of the plasma area 8 is adjusted in accordance with the flow velocity of the gas. Is emitted. Here, the gas used in the gas generator 4 is, for example, air, water vapor, argon, or the like.

プラズマエリア８は、プラズマ部７より遠方になるほど拡散範囲が広がり、プラズマの密度も低下して、プラズマの効果を被処理部９に安定的に供給するのは困難となる。   In the plasma area 8, the diffusion range becomes wider as the distance from the plasma portion 7 increases, the plasma density decreases, and it becomes difficult to stably supply the plasma effect to the processed portion 9.

そのため、被処理部９の近傍である被処理部９の真下にプラズマを集約、凝集する磁界を発生する磁界発生部６を設置し、磁界発生部６で発生させた磁界が、被処理部９を囲むように放射させることにより、プラズマを安定して被処理部９へ印加させることができ、プラズマによる安定的な加熱が可能となる。この理由は、プラズマを構成する電子やイオンが、磁界に寄り添う性質を有しているためである。   Therefore, a magnetic field generation unit 6 that generates a magnetic field that concentrates and agglomerates plasma is installed directly below the processing target unit 9 near the processing target unit 9, and the magnetic field generated by the magnetic field generation unit 6 causes the processing target unit 9 to generate a magnetic field. By radiating so that it surrounds, plasma can be stably applied to the to-be-processed part 9, and stable heating by plasma becomes possible. The reason for this is that the electrons and ions that make up the plasma have the property of being close to the magnetic field.

なお、本実施の形態では、プラズマを発生させるために、高周波発振部１を設けマイクロ波を発生させたが、マイクロ波を発生させる以外に、半導体レーザーなど電子を加速させてガスに電子を照射できるものであれば、光でも構わない。   In the present embodiment, in order to generate plasma, the high frequency oscillator 1 is provided to generate microwaves. However, in addition to generating microwaves, a semiconductor laser or the like accelerates electrons to irradiate gas with electrons. If you can, you can use light.

図２は、本発明の実施の形態１におけるプラズマ処理装置の磁界により保持されるプラズマの詳細な説明図であり、イオン回転方向例をらせん曲線１３で示している。   FIG. 2 is a detailed explanatory diagram of plasma held by the magnetic field of the plasma processing apparatus according to the first embodiment of the present invention, and an example of the ion rotation direction is shown by a spiral curve 13.

図２において、磁界発生部６に流れる電流の方向例を矢印１２で示す方向とすると、磁界は、電流が流れる方向に対して右回りに回転する性質があることから、磁界の進む方向は矢印１１で示す方向となる。   In FIG. 2, assuming that the direction of the current flowing through the magnetic field generation unit 6 is the direction indicated by the arrow 12, the magnetic field has the property of rotating clockwise relative to the direction in which the current flows. The direction is indicated by 11.

次に、プラズマにおける電子は、磁界の進む方向に対して右回りに小さく速く回転し、そしてイオンは、磁界の進む方向に対して左回りに大きくゆっくりと回転する。そして、外から力を加えない限り、電子とイオンは、磁界にまとわりついて離れない。   Then, the electrons in the plasma rotate small and fast clockwise to the direction of the magnetic field, and the ions rotate large and slowly counterclockwise to the direction of the magnetic field. And unless the force is applied from the outside, the electron and the ion stick to the magnetic field and do not separate.

（実施の形態２）
図３は、本発明の実施の形態２におけるプラズマ処理装置の換気部１４を設けた構成例を示しており、後述する換気部１４のガス吸引力によるプラズマエリアの変化例を示す説明図である。 (Embodiment 2)
FIG. 3 shows a configuration example in which the ventilation unit 14 of the plasma processing apparatus according to the second embodiment of the present invention is provided, and is an explanatory diagram showing a variation example of the plasma area due to the gas suction force of the ventilation unit 14 described later. .

図３において、庫内部５の外壁面下部に設けられた換気部１４は、庫内部５内のガスを吸引し外部に排気するよう構成されている。換気部１４が、庫内部５内のガスを外部へ吐き出す方向に動作した場合、ガスの一種であるプラズマエリア８は、換気部１４の吸引力により吸い込まれる方向に動く。この場合、被処理部９に対するプラズマが接する面積が変わってしまう。これにより、安定的にプラズマの効果を被処理部９へ提供することが困難となるので、例えば焼成の場合、被処理部９において、焼きムラを生じてしまうという課題がある。   In FIG. 3, the ventilation part 14 provided in the lower part of the outer wall surface of the inside 5 is configured to suck the gas inside the inside 5 and exhaust it to the outside. When the ventilation part 14 operates in the direction of discharging the gas in the interior 5 to the outside, the plasma area 8 which is a kind of gas moves in the direction of being sucked by the suction force of the ventilation part 14. In this case, the area where the plasma contacts the processed portion 9 changes. As a result, it becomes difficult to stably provide the effect of plasma to the processed portion 9, and therefore, for example, in the case of firing, there is a problem that uneven baking occurs in the processed portion 9.

図４は、本発明の実施の形態２における磁界によりプラズマエリアを保持した状態を示す構成図である。   FIG. 4 is a configuration diagram showing a state in which a plasma area is held by a magnetic field according to the second embodiment of the present invention.

図４において、磁界発生部６により発生した磁界が、プラズマ部７から発生したプラズマエリア８と重なるように放射された場合、重なったプラズマエリア８において、プラズマの電子とイオンは、前記磁界に捉えられ、磁界の進む方向に対して回転しながら、磁界の磁束に寄り添うように集約、凝縮して磁界と同じ方向に進むことになる。これにより、プラズマを磁界内に保持させ、磁界エリア１０はプラズマ保持エリア１５となる。   In FIG. 4, when the magnetic field generated by the magnetic field generation unit 6 is radiated so as to overlap the plasma area 8 generated from the plasma unit 7, electrons and ions of plasma are trapped in the magnetic field in the overlapped plasma area 8. Therefore, while rotating with respect to the direction in which the magnetic field advances, the magnetic fluxes of the magnetic field are aggregated and condensed so that they condense and travel in the same direction as the magnetic field. As a result, the plasma is held in the magnetic field, and the magnetic field area 10 becomes the plasma holding area 15.

従って、磁界発生部６において、被処理部９全体を覆うように磁界を発生させれば、安定してプラズマを被処理部９に供給することができ、被処理部９において生じる焼きムラの課題を改善できる。   Therefore, if a magnetic field is generated in the magnetic field generation unit 6 so as to cover the entire processed portion 9, plasma can be stably supplied to the processed portion 9, and there is a problem of uneven baking occurring in the processed portion 9. Can be improved.

なお、実施の形態１、２において、磁界発生部６はコイルを用いた例を示したが、これに限定されることはなく、磁界を発生させる手段であれば、例えば磁石など用いてもよい。また、実施の形態１、２では、高周波発振部１により発生させたマイクロ波を用いて、プラズマを発生させたが、磁界発生部６は、磁界を発生させるとともに電界も発生することから、高周波発振部１を用いなくてもガス発生部４から放射されたガスが、前記磁界エリア１０に接触させることでも、プラズマを発生させることができる。   In addition, in Embodiments 1 and 2, the magnetic field generation unit 6 has shown an example using a coil, but the present invention is not limited to this, and any means such as a magnet may be used as long as it is a means for generating a magnetic field. . Further, in the first and second embodiments, plasma is generated by using the microwave generated by the high frequency oscillating unit 1, but the magnetic field generating unit 6 generates a magnetic field and an electric field. Even if the oscillating unit 1 is not used, the gas emitted from the gas generating unit 4 can also generate plasma by contacting the magnetic field area 10.

以上のように、本発明にかかるプラズマ処理装置は、種々の被処理部を意図した加熱を行える装置を提供できるので、電子レンジで代表されるような誘電加熱と併用した加熱装置や生ゴミ処理機、化学処理、殺菌処理にも適用できる。   As described above, since the plasma processing apparatus according to the present invention can provide an apparatus capable of performing heating intended for various portions to be processed, a heating apparatus combined with dielectric heating as represented by a microwave oven and raw garbage processing. It can also be applied to machines, chemical treatments, and sterilization treatments.

１ 高周波発振部
２ 導波路部
３ ガス供給部
４ ガス発生部
５ 庫内部
６ 磁界発生部
７ プラズマ部
８ プラズマエリア
９ 被処理部
１０ 磁界エリア
１１ 磁界の進む方向を示す矢印
１２ 電流の流れる方向を示す矢印
１３ イオン回転方向を示すらせん曲線
１４ 換気部
１５ プラズマ保持エリア 1 high frequency oscillation part 2 waveguide part 3 gas supply part 4 gas generation part 5 interior 6 magnetic field generation part 7 plasma part 8 plasma area 9 treated part 10 magnetic field area 11 arrow indicating the direction of the magnetic field 12 the direction of current flow Shown arrow 13 Spiral curve showing ion rotation direction 14 Ventilation section 15 Plasma holding area

Claims (7)

庫内部に配置された被処理部と、高周波を発振する高周波発振部と、ガスを発生するガス発生部と、前記高周波発振部からの高周波電力と前記ガス発生部からのガスとを混合してプラズマを生成する導波路部と、を備え、
前記庫内部には磁界発生部が設けられ、
前記導波路部は前記庫内部内へプラズマを噴出し、前記磁界発生部は前記被処理部へ磁界を放射するプラズマ処理装置。 By mixing a processed part arranged inside the chamber, a high frequency oscillating part for oscillating a high frequency, a gas generating part for generating a gas, a high frequency power from the high frequency oscillating part and a gas from the gas generating part. A waveguide section for generating plasma,
A magnetic field generator is provided inside the cabinet,
The plasma processing apparatus in which the waveguide section ejects plasma into the interior of the chamber, and the magnetic field generation section radiates a magnetic field to the processing target section. 前記磁気発生部は、前記被処理部の近傍に配置されたことを特徴とするプラズマ処理装置。 The plasma processing apparatus, wherein the magnetism generating unit is arranged in the vicinity of the processed portion. 前記磁気発生部は、前記被処理部を囲むように磁界を放射させることを特徴とする
プラズマ処理装置。 The plasma processing apparatus, wherein the magnetic field generator emits a magnetic field so as to surround the part to be processed. 前記庫内部に放射されたプラズマは、前記磁界発生部から放射された磁界と
対向していることを特徴とするプラズマ処理装置。 The plasma processing apparatus, wherein the plasma radiated inside the chamber faces a magnetic field radiated from the magnetic field generator. 前記磁界発生部から放射された磁界が、前記庫内部に放射されたプラズマの領域と重なっていることを特徴とするプラズマ処理装置。 A plasma processing apparatus, wherein a magnetic field emitted from the magnetic field generation unit overlaps a region of plasma emitted inside the chamber. 前記被処理部は食品であることを特徴とするプラズマ処理装置。 The said processing part is a foodstuff, The plasma processing apparatus characterized by the above-mentioned. 請求項１から６に記載のプラズマ処理装置を備えた調理器。 A cooker comprising the plasma processing apparatus according to claim 1.
JP2018193932A 2018-10-15 2018-10-15 Plasma processing apparatus and cooker Pending JP2020064706A (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525645A (en) * 1991-01-30 1993-02-02 Nippon Telegr & Teleph Corp <Ntt> Plasma treating device
JPH05121363A (en) * 1991-09-02 1993-05-18 Fuji Electric Co Ltd Microwave plasma processor and surface processing method by this device
JPH08293397A (en) * 1996-04-22 1996-11-05 Hitachi Ltd Microwave plasma processing device
JPH10229072A (en) * 1997-02-14 1998-08-25 Sumitomo Metal Ind Ltd Method and system for plasma processing and fabrication of semiconductor device
JP2007295909A (en) * 2006-05-01 2007-11-15 Makoto Katsurai Plasma cooking method and apparatus
JP2008547163A (en) * 2005-06-17 2008-12-25 ビーティーユー インターナショナル インコーポレイテッド Microwave plasma cooking
US20090212015A1 (en) * 2005-03-18 2009-08-27 Dougherty Sr Mike L Plasma-Assisted Processing in a Manufacturing Line
WO2017022713A1 (en) * 2015-07-31 2017-02-09 イマジニアリング株式会社 Electromagnetic wave heating device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525645A (en) * 1991-01-30 1993-02-02 Nippon Telegr & Teleph Corp <Ntt> Plasma treating device
JPH05121363A (en) * 1991-09-02 1993-05-18 Fuji Electric Co Ltd Microwave plasma processor and surface processing method by this device
JPH08293397A (en) * 1996-04-22 1996-11-05 Hitachi Ltd Microwave plasma processing device
JPH10229072A (en) * 1997-02-14 1998-08-25 Sumitomo Metal Ind Ltd Method and system for plasma processing and fabrication of semiconductor device
US20090212015A1 (en) * 2005-03-18 2009-08-27 Dougherty Sr Mike L Plasma-Assisted Processing in a Manufacturing Line
JP2008547163A (en) * 2005-06-17 2008-12-25 ビーティーユー インターナショナル インコーポレイテッド Microwave plasma cooking
JP2007295909A (en) * 2006-05-01 2007-11-15 Makoto Katsurai Plasma cooking method and apparatus
WO2017022713A1 (en) * 2015-07-31 2017-02-09 イマジニアリング株式会社 Electromagnetic wave heating device

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