JP2020061549A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 133
- 239000010408 film Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/10—Mixing by creating a vortex flow, e.g. by tangential introduction of flow components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
- B01F25/23—Mixing by intersecting jets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/55—Baffles; Flow breakers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L41/00—Branching pipes; Joining pipes to walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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Abstract
Description
図1は、基板処理装置の構成例を示す断面図である。基板処理装置10は、例えば基板に対しPEALD(Plasma Enhanced Atomic Layer Deposition)を施す成膜装置として構成されている。基板処理装置10ではALDに限らず、CVD処理をしたり、膜をエッチングしたり、膜を改質したりすることができる。基板処理装置10はチャンバ(Reactor Chamber)12を備えている。チャンバ12の内には、RF電力が印加されるシャワーヘッド14が設けられている。シャワーヘッド14は、上方に1つの開口があり、下方に複数のスリット14aがあるものである。
Claims (14)
- チャンバと、
前記チャンバの上方に設けられた筒状部と、前記筒状部の側面に設けられた第1導入管と、前記筒状部の側面に設けられた第2導入管と、前記第1導入管と前記第2導入管から前記筒状部の中に導入されたガスを一旦前記チャンバと逆方向に導いた後に前記チャンバに導入する、前記筒状部の中に設けられたガスガイド部と、を有するマニフォールドと、
前記第1導入管にガスを供給する第1ガス源と、
前記第2導入管にガスを提供する第2ガス源と、を備えたことを特徴とする基板処理装置。 - 前記チャンバの中に設けられたステージと、
前記チャンバの中に設けられ、前記マニフォールドから提供されたガスを前記ステージの上に導くシャワーヘッドと、を備えたことを特徴とする請求項1に記載の基板処理装置。 - 前記ガスガイド部は、中央に開口を有し外縁が前記筒状部に接する底板部と、底面が前記底板部に接するインナーチューブと、を備えたことを特徴とする請求項1又は2に記載の基板処理装置。
- 前記第1導入管は前記ガスガイド部の中央に向かってガスを導入し、
前記第2導入管は、前記第1導入管のガス導入方向とは正反対の方向から、前記ガスガイド部の中央に向かってガスを導入することを特徴とする請求項1から3のいずれか1項に記載の基板処理装置。 - 前記第1導入管と前記第2導入管は、平面視で一直線上に並ぶことを特徴とする請求項4に記載の基板処理装置。
- 前記第1導入管と前記第2導入管は前記ガスガイド部の中央からずれた方向にガスを導入し、前記ガスガイド部と前記筒状部の間に渦を生じさせることを特徴とする請求項1から3のいずれか1項に記載の基板処理装置。
- 前記第1導入管と前記第2導入管は、平面視で前記ガスガイド部の中央を挟んで平行になっていることを特徴とする請求項6に記載の基板処理装置。
- 前記第1導入管と前記第2導入管は、前記筒状部に近づくほど前記チャンバから離れることを特徴とする請求項1から7のいずれか1項に記載の基板処理装置。
- 前記インナーチューブの高さは、前記インナーチューブと前記筒状部の間の距離の2.4倍以上であることを特徴とする請求項3に記載の基板処理装置。
- 前記インナーチューブの高さは、前記インナーチューブと前記筒状部の間の距離の2.8倍以上であることを特徴とする請求項3に記載の基板処理装置。
- 前記インナーチューブは円筒形であることを特徴とする請求項3、9、10のいずれか1項に記載の基板処理装置。
- 前記インナーチューブの側面は曲面であることを特徴とする請求項3、9、10いずれか1項に記載の基板処理装置。
- 前記インナーチューブの側面は平面であることを特徴とする請求項3、9、10のいずれか1項に記載の基板処理装置。
- 前記第1ガス源と前記第2ガス源は異なるガスを提供することを特徴とする請求項1から10のいずれか1項に記載の基板処理装置。
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Application Number | Priority Date | Filing Date | Title |
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US16/157,303 | 2018-10-11 | ||
US16/157,303 US11118262B2 (en) | 2018-10-11 | 2018-10-11 | Substrate processing apparatus having a gas-mixing manifold |
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JP2020061549A true JP2020061549A (ja) | 2020-04-16 |
JP7479808B2 JP7479808B2 (ja) | 2024-05-09 |
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JP (1) | JP7479808B2 (ja) |
KR (1) | KR20200041778A (ja) |
CN (1) | CN111041454A (ja) |
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KR20230170130A (ko) * | 2018-12-20 | 2023-12-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치 |
US11236424B2 (en) * | 2019-11-01 | 2022-02-01 | Applied Materials, Inc. | Process kit for improving edge film thickness uniformity on a substrate |
US20210381107A1 (en) * | 2020-06-03 | 2021-12-09 | Micron Technology, Inc. | Material deposition systems, and related methods and microelectronic devices |
JP7378357B2 (ja) * | 2020-06-17 | 2023-11-13 | 東京エレクトロン株式会社 | 基板処理装置およびガス供給配管のパージ方法 |
WO2024076478A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Showerhead gas inlet mixer |
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- 2019-09-24 TW TW108134349A patent/TW202043536A/zh unknown
- 2019-09-25 KR KR1020190117971A patent/KR20200041778A/ko not_active Application Discontinuation
- 2019-10-11 CN CN201910961951.8A patent/CN111041454A/zh active Pending
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JP7479808B2 (ja) | 2024-05-09 |
CN111041454A (zh) | 2020-04-21 |
KR20200041778A (ko) | 2020-04-22 |
TW202043536A (zh) | 2020-12-01 |
US11118262B2 (en) | 2021-09-14 |
US20200115797A1 (en) | 2020-04-16 |
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