JP2020024931A - イオン注入システムにおける抽出電極アセンブリの電圧変調 - Google Patents
イオン注入システムにおける抽出電極アセンブリの電圧変調 Download PDFInfo
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- JP2020024931A JP2020024931A JP2019190989A JP2019190989A JP2020024931A JP 2020024931 A JP2020024931 A JP 2020024931A JP 2019190989 A JP2019190989 A JP 2019190989A JP 2019190989 A JP2019190989 A JP 2019190989A JP 2020024931 A JP2020024931 A JP 2020024931A
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- 238000000605 extraction Methods 0.000 title claims abstract description 141
- 238000005468 ion implantation Methods 0.000 title claims abstract description 67
- 150000002500 ions Chemical class 0.000 claims abstract description 293
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 132
- 230000001629 suppression Effects 0.000 claims abstract description 127
- 238000011109 contamination Methods 0.000 claims abstract description 33
- 238000010891 electric arc Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 16
- 230000006872 improvement Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 239000007943 implant Substances 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 abstract description 39
- 235000012431 wafers Nutrition 0.000 description 78
- 239000007789 gas Substances 0.000 description 48
- 238000012545 processing Methods 0.000 description 26
- 230000000712 assembly Effects 0.000 description 20
- 238000000429 assembly Methods 0.000 description 20
- 239000012212 insulator Substances 0.000 description 19
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- 239000000047 product Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 12
- 230000032258 transport Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
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- 238000005452 bending Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (5)
- イオン注入システムにおける粒子汚染を低減するための方法であり、
イオン源と、前記イオン源に近い位置に設けられる抽出電極アセンブリと、加工物に選択的にイオンを注入するために前記加工物をその内部と外部とに移動させるように構成されたエンドステーションと、を含む前記イオン注入システムを提供する工程と、
前記イオン源でイオンを生成するために前記イオン源にカソード電圧を印加し、かつ、イオンビーム中の電子が前記イオン源の内部に引き込まれることを防止するために前記抽出アセンブリに抑制電圧を印加するようにして、前記抽出アセンブリと連動して動作する前記イオン源でイオンビームを形成する工程と、
前記加工物を、前記エンドステーションと、外部環境との間で移動させる工程と、
前記加工物の表面の堆積物を除去するため及びその後の汚染を軽減するために、前記抽出アセンブリを通じて電流又はアーク放電を誘発するように、前記加工物の移動とほぼ同時に前記抑制電圧を調整する工程と、
を含むことを特徴とする方法。 - 前記抑制電圧を調整する工程は、少なくとも1以上の周期において、前記抑制電圧を周期的に変化させる工程を含んでいることを特徴とする請求項1に記載の方法。
- 先行して蒸着された物質が前記抽出電極アッセンブリから沈殿することを特徴とする請求項1に記載の方法。
- 粒子汚染を低減する前記イオン注入システムへの改善であって、前記イオン注入システムは、
イオン源と、
前記イオン源に近い位置に設けられ前記イオン源からイオンを抽出する抽出電極アッセンブリと、
加工物に選択的にイオンを注入するために前記加工物をその内部と外部とに移動させるように構成されたエンドステーションと、
を有し、
前記加工物の表面の堆積物を除去するため及びその後の汚染を軽減するために、前記抽出アセンブリを通じて電流又はアーク放電を誘発するように、前記加工物の移動とほぼ同時に、予め定められた電圧及び予め定められた抑制電圧の間での電圧の選択的な変調が可能なように構成されたコントローラを備えることを特徴とする改善。 - 前記コントローラは前記イオンの構成を除去するために、前記イオン源に印加される前記電圧を選択的に変調するように構成されることを特徴とする請求項4に記載の改善。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/886,963 US9006690B2 (en) | 2013-05-03 | 2013-05-03 | Extraction electrode assembly voltage modulation in an ion implantation system |
US13/886,963 | 2013-05-03 | ||
JP2016512969A JP2016524277A (ja) | 2013-05-03 | 2014-05-02 | イオン注入システムにおける抽出電極アッセンブリの電圧変調 |
Related Parent Applications (1)
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JP2016512969A Division JP2016524277A (ja) | 2013-05-03 | 2014-05-02 | イオン注入システムにおける抽出電極アッセンブリの電圧変調 |
Publications (2)
Publication Number | Publication Date |
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JP2020024931A true JP2020024931A (ja) | 2020-02-13 |
JP6931686B2 JP6931686B2 (ja) | 2021-09-08 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2016512969A Pending JP2016524277A (ja) | 2013-05-03 | 2014-05-02 | イオン注入システムにおける抽出電極アッセンブリの電圧変調 |
JP2019190989A Active JP6931686B2 (ja) | 2013-05-03 | 2019-10-18 | イオン注入システムにおける抽出電極アセンブリの電圧変調 |
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JP2016512969A Pending JP2016524277A (ja) | 2013-05-03 | 2014-05-02 | イオン注入システムにおける抽出電極アッセンブリの電圧変調 |
Country Status (6)
Country | Link |
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US (1) | US9006690B2 (ja) |
JP (2) | JP2016524277A (ja) |
KR (1) | KR102213049B1 (ja) |
CN (1) | CN105474349B (ja) |
TW (1) | TWI638379B (ja) |
WO (1) | WO2014179687A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9748072B2 (en) * | 2014-06-23 | 2017-08-29 | Advanced Ion Beam Technology, Inc. | Lower dose rate ion implantation using a wider ion beam |
US9214318B1 (en) * | 2014-07-25 | 2015-12-15 | International Business Machines Corporation | Electromagnetic electron reflector |
US9318302B1 (en) * | 2015-03-31 | 2016-04-19 | Axcelis Technologies, Inc. | Integrated extraction electrode manipulator for ion source |
KR102642334B1 (ko) | 2015-11-05 | 2024-02-28 | 액셀리스 테크놀러지스, 인크. | 이온 주입 시스템용 립을 포함하는 이온 소스 라이너 |
US10074508B2 (en) | 2015-11-10 | 2018-09-11 | Axcelis Technologies, Inc. | Low conductance self-shielding insulator for ion implantation systems |
TWI739793B (zh) * | 2016-01-19 | 2021-09-21 | 美商艾克塞利斯科技公司 | 用於一離子植入系統之光學器件板的多件式電極孔、以及使用彼之離子植入系統 |
JP6802277B2 (ja) | 2016-01-19 | 2020-12-16 | アクセリス テクノロジーズ, インコーポレイテッド | 改善されたイオン源のカソードシールド |
US10361069B2 (en) | 2016-04-04 | 2019-07-23 | Axcelis Technologies, Inc. | Ion source repeller shield comprising a labyrinth seal |
US10074514B1 (en) * | 2017-09-08 | 2018-09-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for improved ion beam current |
JP7104898B2 (ja) * | 2019-03-01 | 2022-07-22 | 日新イオン機器株式会社 | イオン源およびそのクリーニング方法 |
DE102019107367A1 (de) * | 2019-03-22 | 2020-09-24 | Vaillant Gmbh | Verfahren zum Prüfen des Vorhandenseins einer Rückschlagklappe in einer Heizungsanlage |
US11651932B1 (en) * | 2021-10-26 | 2023-05-16 | Applied Materials, Inc. | Mismatched optics for angular control of extracted ion beam |
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JPH07118859A (ja) * | 1993-10-19 | 1995-05-09 | Nissin Electric Co Ltd | イオン源装置 |
JPH0936059A (ja) * | 1995-07-17 | 1997-02-07 | Eaton Corp | イオン注入装置、その内側表面からの汚染物質の除去方法とそのための除去装置 |
JP2006004826A (ja) * | 2004-06-18 | 2006-01-05 | Nec Electronics Corp | イオンビーム引出電極およびイオン注入装置 |
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JP2012038668A (ja) * | 2010-08-11 | 2012-02-23 | Nissin Ion Equipment Co Ltd | イオン源電極のクリーニング方法 |
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-
2013
- 2013-05-03 US US13/886,963 patent/US9006690B2/en active Active
-
2014
- 2014-05-02 WO PCT/US2014/036578 patent/WO2014179687A1/en active Application Filing
- 2014-05-02 KR KR1020157034421A patent/KR102213049B1/ko active IP Right Grant
- 2014-05-02 JP JP2016512969A patent/JP2016524277A/ja active Pending
- 2014-05-02 CN CN201480025170.3A patent/CN105474349B/zh active Active
- 2014-05-05 TW TW103116029A patent/TWI638379B/zh active
-
2019
- 2019-10-18 JP JP2019190989A patent/JP6931686B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07118859A (ja) * | 1993-10-19 | 1995-05-09 | Nissin Electric Co Ltd | イオン源装置 |
JPH0936059A (ja) * | 1995-07-17 | 1997-02-07 | Eaton Corp | イオン注入装置、その内側表面からの汚染物質の除去方法とそのための除去装置 |
JP2006004826A (ja) * | 2004-06-18 | 2006-01-05 | Nec Electronics Corp | イオンビーム引出電極およびイオン注入装置 |
JP2010515235A (ja) * | 2007-01-03 | 2010-05-06 | アクセリス テクノロジーズ, インコーポレイテッド | イオン注入機の粒子汚染を軽減する方法 |
JP2012038668A (ja) * | 2010-08-11 | 2012-02-23 | Nissin Ion Equipment Co Ltd | イオン源電極のクリーニング方法 |
Also Published As
Publication number | Publication date |
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KR20160005095A (ko) | 2016-01-13 |
CN105474349A (zh) | 2016-04-06 |
US20140326901A1 (en) | 2014-11-06 |
WO2014179687A1 (en) | 2014-11-06 |
US9006690B2 (en) | 2015-04-14 |
TW201506982A (zh) | 2015-02-16 |
JP6931686B2 (ja) | 2021-09-08 |
KR102213049B1 (ko) | 2021-02-05 |
JP2016524277A (ja) | 2016-08-12 |
TWI638379B (zh) | 2018-10-11 |
CN105474349B (zh) | 2018-02-02 |
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