JP2019537235A - 膜、マルチレベル素子、マルチレベル素子の製造方法、マルチレベル素子の駆動方法 - Google Patents
膜、マルチレベル素子、マルチレベル素子の製造方法、マルチレベル素子の駆動方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title description 22
- 230000004888 barrier function Effects 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 44
- 239000010408 film Substances 0.000 description 33
- 238000012986 modification Methods 0.000 description 25
- 230000004048 modification Effects 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 22
- 230000000694 effects Effects 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 230000005428 wave function Effects 0.000 description 13
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- BXAVKNRWVKUTLY-UHFFFAOYSA-N 4-sulfanylphenol Chemical compound OC1=CC=C(S)C=C1 BXAVKNRWVKUTLY-UHFFFAOYSA-N 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005314 correlation function Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000004698 pseudo-potential method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000003775 Density Functional Theory Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
段階S110は、事前用意の段階であって、基板を用意する段階と、基板上にゲート電極を形成する段階と、前記ゲート電極上にゲート絶縁膜を形成する段階と、を含んでいてもよい。
段階S120において第1のアクティブ層150が蒸着されてもよい。図16に基づいて段階S120を具体的に説明する。
ソースガス加圧ドージング段階(S210)のために、ソースガスが用意されてもよい。ソースガスは、蒸着しようとする膜の種類に応じて種々に用意されてもよい。例えば、蒸着しようとする膜が金属酸化物である場合、それに対応する金属前駆体ソースガスが用意されてもよい。例えば、蒸着しようとする膜がジンクオキサイド(ZnO)である場合、ソースガスは、DEZ(diethyl zinc)を含んでいてもよい。
第1のメインパージング段階(S220)において、不活性ガスが用いられてもよく、不活性ガスは、例えば、アルゴン(Ar)、または窒素(N2)ガスからなってもよい。パージングする段階によって、基板の表面に吸着し切れなかった過剰のソースガスが除去可能である。
反応ガスドージング段階(S230)において、反応ガスは、ソースガスと反応して蒸着しようとする膜に還元されてもよい。例えば、ソースガスがDEZを含む場合、反応ガスはH2Oからなってもよい。
反応ガスドージング段階後に、第2のメインパージング段階(S240)がさらに行われてもよい。これにより、基板の表面に吸着し切れなかった過剰のガスが除去可能になる。
段階S210のソースガス加圧ドージング段階は、加圧雰囲気下で行われてもよい。換言すれば、ソースガス加圧ドージング段階は、高圧の雰囲気下で行われてもよく、これは加圧段階と略称することがある。
再び図15を参照すると、第1のアクティブ層150上に第2のバリア層160が蒸着されてもよい。段階S130は、前述した段階S110に対応するので、具体的な説明を省略する。
第2のバリア層160上に第2のアクティブ層170が蒸着されてもよい。このとき、段階S140は、前述した段階S120に対応するので、具体的な説明を省略する。
実験例によるマルチレベル素子を作製するために、まず、基板として300nmの厚さのシリコンウェハを用意し、シリコンウェハ上に70nm厚のアルミニウムゲート電極を蒸着した。ゲート電極の蒸着に際しては、熱気相蒸着により蒸着させた。ゲート電極上に絶縁膜として酸化アルミニウム(Al2O3)を蒸着した。酸化アルミニウムは、原子層蒸着工程を用いて蒸着され、TMA前駆体ソースガス提供段階、パージ段階、H2O提供段階、パージ段階の順で進められた。酸化アルミニウムの厚さを、蒸着されるアクティブ層の層数に応じて異ならせた。酸化アルミニウムの厚さを、アクティブ層の層数が増加するほど厚くした。
Claims (5)
- 伝導帯(conduction band)内の低レベル(low level)電子エネルギー範囲で第1の電子状態の数を提供し、前記伝導帯内の、前記低レベル電子エネルギー範囲よりも高い高レベル(high level)電子エネルギー範囲で第2の電子状態の数を提供し、
前記低レベル電子エネルギー範囲と前記高レベル電子エネルギー範囲との間で局在状態(localized state)が提供される、膜。 - 非晶質領域及び前記非晶質領域によって取り囲まれる複数の結晶質領域を含み、
前記非晶質領域が有する第1のエネルギー状態のうちの特定の第1のエネルギー状態と前記結晶質領域が有する第2のエネルギー状態のうちの特定の第2のエネルギー状態との共鳴マッチング(resonant matching)によって量子化された伝導性状態が(quantized conduction state)提供される、膜。 - ゲート電極と、
前記ゲート電極の一方の側に形成される第1のアクティブ層と、
前記第1のアクティブ層の一方の側に形成される第2のアクティブ層と、
ソース及びドレイン電極と、
前記第1のアクティブ層と前記第2のアクティブ層とを分離するバリア層と、を含み、
前記ゲート電極に印加されるゲート電圧の大きさに応じて、前記第1及び前記第2のアクティブ層のうちチャネルが形成されるアクティブ層の数が制御される、マルチレベル素子。 - チャンバー内に基板を用意した状態で、前記基板上に、第1のアクティブ層形成段階と、
バリア層形成段階と、
第2のアクティブ層形成段階と、を含み、
前記第1のアクティブ層形成段階及び前記第2のアクティブ層形成段階のうちの少なくとも1つの段階は、
前記チャンバーの流出口を閉じた状態で、金属前駆体を有する金属前駆体ソースガスを提供することにより、前記チャンバー内の圧力を増加させて、前記金属前駆体を前記基板に吸着させるソースガス加圧ドージング(dosing)段階と、
前記ソースガス加圧ドージング段階後に、パージさせる第1のメインパージング(main purging)段階と、
前記第1のメインパージング段階後に、反応ガスを提供する反応ガスドージング段階と、
前記反応ガスドージング段階後に、パージさせる第2のメインパージング段階と、を含む、マルチレベル素子の製造方法。 - ゲート電極に、第1のゲート電圧範囲のゲート電圧を印加して、第1のアクティブ層を活性化させる第1の段階と、
前記ゲート電極に、前記第1のゲート電圧範囲のゲート電圧よりも大きい第2のゲート電圧範囲のゲート電圧を印加する第2段階と、
前記ゲート電極に、前記第2のゲート電圧範囲のゲート電圧よりも大きい第3のゲート電圧範囲のゲート電圧を印加して、第1及び第2のアクティブ層を活性化させる第3の段階と、を含む、マルチレベル素子の駆動方法。
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