JP2019535023A - 光近接場計測 - Google Patents
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- JP2019535023A JP2019535023A JP2019537744A JP2019537744A JP2019535023A JP 2019535023 A JP2019535023 A JP 2019535023A JP 2019537744 A JP2019537744 A JP 2019537744A JP 2019537744 A JP2019537744 A JP 2019537744A JP 2019535023 A JP2019535023 A JP 2019535023A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 75
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- 230000005855 radiation Effects 0.000 claims abstract description 13
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 38
- 239000000835 fiber Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 2
- 239000004005 microsphere Substances 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims description 2
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- 230000009467 reduction Effects 0.000 description 2
- 238000004621 scanning probe microscopy Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 238000004630 atomic force microscopy Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
- G01B9/02002—Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies
- G01B9/02004—Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Inspection Of Paper Currency And Valuable Securities (AREA)
- Holo Graphy (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
本願は、その全体を本願に引用して援用する、2016年9月28日付で提出された米国仮特許出願第62/400,627号の利益を主張する。
Claims (21)
- ウェハ上の特徴を検出するように構成される少なくとも1つの光マイクロキャビティセンサと、
デバイスの特徴と、重なっている対象物の特徴との間の距離を、前記少なくとも1つの光マイクロキャビティセンサを前記特徴の間で動かすことによって測定するように構成されるコントローラと
を備えるシステム。 - 請求項1に記載のシステムであって、
前記少なくとも1つの光マイクロキャビティセンサは、少なくとも1つのマイクロキャビティを備え、前記少なくとも1つのマイクロキャビティは、前記少なくとも1つのマイクロキャビティを越えて延伸するエバネセント放射を提供し、検出された前記特徴と相互作用するように構成され、前記少なくとも1つのマイクロキャビティは、前記少なくとも1つのマイクロキャビティのエバネセント場と検出された前記特徴との間の相互作用を示す放射を提供するようにさらに構成されるシステム。 - 請求項2に記載のシステムであって、
前記少なくとも1つのマイクロキャビティは、100よりも大きい高い線質係数、及び、前記少なくとも1つのマイクロキャビティ内でのλ3未満の光エネルギーの緊密な閉じ込めをもたらすように構成されるシステム。 - 請求項3に記載のシステムであって、
前記少なくとも1つのマイクロキャビティは、マイクロトロイド、マイクロスフェア、マイクロディスク、または1Dもしくは2D(一次元もしくは二次元)フォトニック結晶キャビティとして形成されるシステム。 - 請求項1に記載のシステムであって、
前記コントローラは、前記少なくとも1つの光マイクロキャビティセンサの水平位置を制御するようにさらに構成されるシステム。 - 請求項1に記載のシステムであって、
前記コントローラは、前記少なくとも1つの光マイクロキャビティセンサの垂直位置を制御するようにさらに構成されるシステム。 - 請求項6に記載のシステムであって、
前記コントローラは、前記少なくとも1つの光マイクロキャビティセンサを指定の走査高さに維持するようにさらに構成されるシステム。 - 請求項6に記載のシステムであって、
前記コントローラに走査高さデータを提供するように構成された少なくとも1つの補助光マイクロキャビティセンサをさらに備えるシステム。 - 請求項1に記載のシステムであって、
前記少なくとも1つの光マイクロキャビティセンサは、キャビティ共振によってカバーされる範囲内の指定の光学利得を提供するように選択される広帯域蛍光媒体が搭載されるシステム。 - 請求項1に記載のシステムであって、
前記少なくとも1つの光マイクロキャビティセンサは、透明基板上に取り付けられるシステム。 - 請求項10に記載のシステムであって、
前記透明基板は、光計測測定をマイクロキャビティ測定と見当合わせするための見当合わせマークをさらに備えるシステム。 - 光マイクロキャビティプローブとウェハトポロジとの間の近接場相互作用によって前記ウェハトポロジをマッピングするために、前記光マイクロキャビティプローブを使用することと、
高容量の計測を実施するために前記光マイクロキャビティプローブの照明および前記光マイクロキャビティプローブによる検出を構成することと、
を含む方法。 - 請求項12に記載の方法であって、
前記光マイクロキャビティプローブによって検知される線シフトを直接的に検出するために、広帯域照明およびスペクトル感受性の検出を使用することをさらに含む方法。 - 請求項12に記載の方法であって、
調節可能な照明を使用し、前記光マイクロキャビティプローブからの信号の波長依存性の強度を検出することをさらに含む方法。 - 請求項12に記載の方法であって、
前記光マイクロキャビティプローブの伝送線勾配において狭帯域照明を使用し、高速検出器によって前記光マイクロキャビティプローブの信号強度を検出することをさらに含む方法。 - 請求項12に記載の方法であって、
検出を増強するために、前記光マイクロキャビティプローブを蛍光媒体と結合することをさらに含む方法。 - 請求項12に記載の方法であって、
前記光マイクロキャビティプローブは、それぞれのファイバに結合されているマイクロキャビティを備え、前記方法は、前記ファイバ内の放射との干渉を提供するために、ウェハ特徴と相互作用するためにそれぞれの前記キャビティを越えて延伸するエバネセント放射を提供するように、前記マイクロキャビティを構成することをさらに含む方法。 - 請求項12に記載の方法であって、
前記マイクロキャビティプローブの走査高さを制御することをさらに含む方法。 - 請求項18に記載の方法であって、
固定された走査高さにおいて複数のウェハを走査し、前記ウェハの光学的変動及び/又はトポロジ変動を調整することをさらに含む方法。 - 請求項12に記載の方法であって、
前記ウェハトポロジ内のデバイス構造に対する、重なっている対象物構造の位置を測定することをさらに含む方法。 - 請求項20に記載の方法であって、
前記光マイクロキャビティプローブからの信号と、対応する光計測測定とをともに見当合わせすることをさらに含む方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662400627P | 2016-09-28 | 2016-09-28 | |
US62/400,627 | 2016-09-28 | ||
US15/599,881 | 2017-05-19 | ||
US15/599,881 US11815347B2 (en) | 2016-09-28 | 2017-05-19 | Optical near-field metrology |
PCT/US2017/041404 WO2018063471A2 (en) | 2016-09-28 | 2017-07-10 | Optical near-field metrology |
Publications (3)
Publication Number | Publication Date |
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JP2019535023A true JP2019535023A (ja) | 2019-12-05 |
JP2019535023A5 JP2019535023A5 (ja) | 2020-08-20 |
JP7113829B2 JP7113829B2 (ja) | 2022-08-05 |
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JP2019537744A Active JP7113829B2 (ja) | 2016-09-28 | 2017-07-10 | 光近接場計測 |
Country Status (9)
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US (1) | US11815347B2 (ja) |
EP (1) | EP3519762A4 (ja) |
JP (1) | JP7113829B2 (ja) |
KR (1) | KR102488219B1 (ja) |
CN (1) | CN109661559B (ja) |
IL (1) | IL264547B2 (ja) |
SG (1) | SG11201900996VA (ja) |
TW (1) | TWI782924B (ja) |
WO (1) | WO2018063471A2 (ja) |
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EP3519762A4 (en) | 2020-05-27 |
EP3519762A2 (en) | 2019-08-07 |
WO2018063471A3 (en) | 2018-07-26 |
SG11201900996VA (en) | 2019-04-29 |
KR102488219B1 (ko) | 2023-01-12 |
KR20190050856A (ko) | 2019-05-13 |
CN109661559B (zh) | 2021-07-30 |
US11815347B2 (en) | 2023-11-14 |
IL264547B2 (en) | 2023-05-01 |
TW201819936A (zh) | 2018-06-01 |
IL264547A (en) | 2019-02-28 |
TWI782924B (zh) | 2022-11-11 |
WO2018063471A2 (en) | 2018-04-05 |
US20180087900A1 (en) | 2018-03-29 |
CN109661559A (zh) | 2019-04-19 |
JP7113829B2 (ja) | 2022-08-05 |
IL264547B1 (en) | 2023-01-01 |
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