JP2019220685A - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
- Publication number
- JP2019220685A JP2019220685A JP2019103151A JP2019103151A JP2019220685A JP 2019220685 A JP2019220685 A JP 2019220685A JP 2019103151 A JP2019103151 A JP 2019103151A JP 2019103151 A JP2019103151 A JP 2019103151A JP 2019220685 A JP2019220685 A JP 2019220685A
- Authority
- JP
- Japan
- Prior art keywords
- radiation detector
- amplifier transistor
- photodiode
- voltage
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 18
- 230000007423 decrease Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
図1〜図6は、いずれも本発明の実施の形態1に係る放射線検出器100の構成を示す回路図であり、それぞれ動作メカニズムにおける第1工程〜第6工程を示している。図7は、本発明の実施の形態1に係る放射線検出器100の構成を示す回路図であり、動作メカニズムにおける第4工程の変形例を示している。図1〜図7には、アンプトランジスタ3におけるゲート電圧Vg(横軸:単位V)に対するアンプトランジスタ3に流れる電流Id(縦軸:単位A)の特性を示す曲線のグラフを併せて示している。以下、当該第4工程の変形例を、第4´工程と称する。
ここで、多数の放射線検出器100について考える。電圧Vresetについては、放射線検出器100毎のバラツキはほぼ生じない。一方、電圧Vgに対する電流Idの特性は、放射線検出器100毎に(換言すれば、アンプトランジスタ3毎に)比較的大きなバラツキが生じ得る。当該バラツキを、図12に曲線13〜曲線15で示した。つまり、多数のアンプトランジスタ3の各々に対して電圧Vresetが印加されたとき、当該特性のバラツキに応じた電流Idのバラツキが生じる(点16〜点18参照)。
チャネル層53は、非晶質でない結晶構造を持つ酸化物半導体を含むことが好ましい。これにより、アンプトランジスタ3の閾値電圧の変動をより小さくすることができるため、放射線量の検出バラツキをより抑制することが可能となる。例えば、チャネル層53として、アモルファス構造ではなく、チャネル膜成長方向でC軸(膜表面に垂直な方向)に強く配向した結晶構造を採用することが考えられる。
本発明の態様1に係る放射線検出器は、放射線から得られた光を受け、当該光を電気信号に変換する受光素子と、上記電気信号を増幅するアンプトランジスタとを備えており、上記アンプトランジスタは、上記アンプトランジスタが予め導通された状態で上記受光素子が上記光を受けるように構成されている。
2 読み取りトランジスタ
3 アンプトランジスタ
4 リセットトランジスタ
5 i層
6 n層
7 p層
51 ガラス基板
52 ゲート電極
53 チャネル層
54 ドレイン電極
55 ソース電極
56〜60 絶縁膜
61 フォトダイオード下部電極層
62 フォトダイオード本体層
63 フォトダイオード上部電極層
64 上部配線電極
65 フォトダイオード下部電極層の下地
100 放射線検出器
111 計測回路
Claims (5)
- 放射線から得られた光を受け、当該光を電気信号に変換する受光素子と、
上記電気信号を増幅するアンプトランジスタとを備えており、
上記アンプトランジスタは、上記アンプトランジスタが予め導通された状態で上記受光素子が上記光を受けるように構成されていることを特徴とする放射線検出器。 - 上記受光素子は、フォトダイオードであることを特徴とする請求項1に記載の放射線検出器。
- 上記アンプトランジスタは、チャネル層を有しており、
上記チャネル層は、非晶質でない結晶構造を持つ酸化物半導体を含むことを特徴とする請求項1に記載の放射線検出器。 - 上記アンプトランジスタは、チャネル層を有しており、
上記チャネル層の構成元素は、インジウムおよび亜鉛を少なくとも含むことを特徴とする請求項1に記載の放射線検出器。 - 上記受光素子が上記アンプトランジスタの上に配置されていることを特徴とする請求項1から4のいずれか1項に記載の放射線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862686787P | 2018-06-19 | 2018-06-19 | |
US62/686,787 | 2018-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019220685A true JP2019220685A (ja) | 2019-12-26 |
Family
ID=68840546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019103151A Pending JP2019220685A (ja) | 2018-06-19 | 2019-05-31 | 放射線検出器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10886314B2 (ja) |
JP (1) | JP2019220685A (ja) |
CN (1) | CN110618441A (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308306A (ja) * | 2000-04-21 | 2001-11-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその駆動方法 |
WO2007099850A1 (ja) * | 2006-02-23 | 2007-09-07 | Omron Corporation | 固体撮像装置及び固体撮像装置の信号生成方法 |
JP2012531046A (ja) * | 2009-06-17 | 2012-12-06 | ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン | フラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法 |
US20130099099A1 (en) * | 2010-07-12 | 2013-04-25 | Thalis Anaxagoras | Radiation detector and method |
JP2016006956A (ja) * | 2014-05-29 | 2016-01-14 | 株式会社半導体エネルギー研究所 | 撮像素子、電子機器、撮像素子の駆動方法及び電子機器の駆動方法 |
JP2018026812A (ja) * | 2016-08-03 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 撮像装置、撮像モジュール、電子機器、及び撮像システム |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3854887B2 (ja) * | 2002-04-05 | 2006-12-06 | キヤノン株式会社 | 光電変換装置 |
JP2005327817A (ja) * | 2004-05-12 | 2005-11-24 | Toshiba Corp | 放射線検出器 |
US20090084961A1 (en) * | 2007-09-28 | 2009-04-02 | Junichi Tonotani | Radiation detector |
CN103268891B (zh) * | 2013-03-28 | 2016-08-10 | 北京京东方光电科技有限公司 | 一种薄膜晶体管、非晶硅平板探测基板及制备方法 |
KR101498635B1 (ko) * | 2013-08-08 | 2015-03-04 | 주식회사 레이언스 | 이미지센서 및 이의 제조방법 |
CN103560135B (zh) * | 2013-11-14 | 2015-12-02 | 北京京东方光电科技有限公司 | 一种x射线传感器的阵列基板及其制造方法 |
US10180501B2 (en) * | 2014-11-27 | 2019-01-15 | Sharp Kabushiki Kaisha | Radiation detector |
WO2016144108A1 (ko) * | 2015-03-10 | 2016-09-15 | 크루셜텍 (주) | 이미지 스캔 가능한 디스플레이 장치 |
CN104716152B (zh) * | 2015-04-01 | 2018-09-14 | 京东方科技集团股份有限公司 | X射线平板探测器及其制备方法与白色绝缘材料 |
CN104795419B (zh) * | 2015-05-11 | 2018-05-08 | 京东方科技集团股份有限公司 | X射线平板探测器 |
EP3324609A4 (en) | 2015-07-13 | 2018-08-01 | Sharp Kabushiki Kaisha | Radiation detector |
KR102432252B1 (ko) * | 2017-06-13 | 2022-08-16 | 삼성전자주식회사 | 엑스선 검출기, 이를 포함한 엑스선 촬영 장치 및 그 제조 방법 |
-
2019
- 2019-05-31 JP JP2019103151A patent/JP2019220685A/ja active Pending
- 2019-06-14 US US16/441,842 patent/US10886314B2/en active Active
- 2019-06-18 CN CN201910525165.3A patent/CN110618441A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308306A (ja) * | 2000-04-21 | 2001-11-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその駆動方法 |
WO2007099850A1 (ja) * | 2006-02-23 | 2007-09-07 | Omron Corporation | 固体撮像装置及び固体撮像装置の信号生成方法 |
JP2012531046A (ja) * | 2009-06-17 | 2012-12-06 | ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン | フラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法 |
US20130099099A1 (en) * | 2010-07-12 | 2013-04-25 | Thalis Anaxagoras | Radiation detector and method |
JP2016006956A (ja) * | 2014-05-29 | 2016-01-14 | 株式会社半導体エネルギー研究所 | 撮像素子、電子機器、撮像素子の駆動方法及び電子機器の駆動方法 |
JP2018026812A (ja) * | 2016-08-03 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 撮像装置、撮像モジュール、電子機器、及び撮像システム |
Also Published As
Publication number | Publication date |
---|---|
CN110618441A (zh) | 2019-12-27 |
US20190386046A1 (en) | 2019-12-19 |
US10886314B2 (en) | 2021-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7145201B2 (ja) | フォトセンサーにおける高強度光を検出すること | |
US9476992B2 (en) | Electromagnetic radiation detector with gain range selection | |
US11221253B2 (en) | System with a SPAD-based semiconductor device having dark pixels for monitoring sensor parameters | |
US10469774B2 (en) | Imaging apparatus and camera system including the imaging apparatus | |
US11943542B2 (en) | Imaging devices with single-photon avalanche diodes having sub-exposures for high dynamic range | |
US11012655B2 (en) | Image sensor including read-out circuitry and imaging system comprising the imaging sensor | |
US10820882B2 (en) | Methods for determining misalignment of X-ray detectors | |
WO2020045363A1 (ja) | フォトセンサ、イメージセンサ及びフォトセンサの駆動方法 | |
US10128296B2 (en) | Imaging array with improved dynamic range utilizing parasitic photodiodes | |
US9257460B2 (en) | Image capturing apparatus and control method therefor | |
CN112117288B (zh) | 硅光电倍增器的温度和不均匀补偿电路 | |
US20090108311A1 (en) | CMOS Detector with Reduced Sensitivity to X-Rays | |
US9497402B2 (en) | Image lag mitigation for buffered direct injection readout with current mirror | |
JP2019220685A (ja) | 放射線検出器 | |
WO2022124019A1 (ja) | フォトディテクタ、フォトディテクタアレイおよび距離測定システム | |
US20220323031A1 (en) | Method and system for high bit depth imaging | |
US11108983B2 (en) | Imaging device | |
US11158658B2 (en) | Radiation detector | |
WO2022202451A1 (ja) | 光検出器および距離測定システム | |
JP2006005312A (ja) | 光センサおよび固体撮像装置 | |
US7291876B1 (en) | Diffusion bias control for improving sensitivity of CMOS active pixel sensors | |
CN118159197A (zh) | 在计算机断层扫描中使用辐射检测器的成像方法 | |
JP2017126758A (ja) | 検出装置及び検出システム | |
KR20140128637A (ko) | 선형 동작 범위가 넓은 고감도 cmos 영상 센서 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190531 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200731 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201222 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210622 |