JP2019220382A - 表示装置 - Google Patents
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- JP2019220382A JP2019220382A JP2018117904A JP2018117904A JP2019220382A JP 2019220382 A JP2019220382 A JP 2019220382A JP 2018117904 A JP2018117904 A JP 2018117904A JP 2018117904 A JP2018117904 A JP 2018117904A JP 2019220382 A JP2019220382 A JP 2019220382A
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- 239000010410 layer Substances 0.000 claims description 120
- 239000000463 material Substances 0.000 claims description 38
- 239000012044 organic layer Substances 0.000 claims description 27
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 description 37
- 238000005192 partition Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- -1 amine compound Chemical class 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BUHRSCMTZBXMTJ-UHFFFAOYSA-N 2-methylquinolin-8-ol;4-phenylphenol Chemical compound C1=CC=C(O)C2=NC(C)=CC=C21.C1=CC=C(O)C2=NC(C)=CC=C21.C1=CC(O)=CC=C1C1=CC=CC=C1 BUHRSCMTZBXMTJ-UHFFFAOYSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- OWEOYUSGIQAOBA-UHFFFAOYSA-N 3-(2-methylphenyl)-n-[4-[4-[3-(2-methylphenyl)anilino]phenyl]phenyl]aniline Chemical group CC1=CC=CC=C1C1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C=CC=3)C=3C(=CC=CC=3)C)=CC=2)=C1 OWEOYUSGIQAOBA-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
図1は、本発明の一実施形態に係る有機EL表示装置100の構成を示した概略図であり、有機EL表示装置100を平面視した場合における概略構成を示している。本明細書では、有機EL表示装置100を画面(画像領域)に垂直な方向から見た様子を「平面視」と呼ぶ。尚、図1において、後述するゲート線(走査線GL)が延長する方向をx方向、後述する映像信号線(映像信号線DL)が延長する方向をy方向と示している。
図6は、本実施形態の表示装置100Aを平面視した場合の拡大図である。尚、表示装置100Aの概略構成は、図1を参照して説明した表示装置100の概略構成と略同様であるため詳細な説明は省略する。
図9は、本実施形態の表示装置100Bを平面視した場合の拡大図である。尚、表示装置100Bの概略構成は、図1を参照して説明した表示装置100の概略構成と略同様であるため詳細な説明は省略する。
730mm×920mmのガラス基板上に、図4及び図5を参照して説明した第1実施形態に係る有機EL表示装置100に基づいて、有機EL表示装置を作製した。この際、コンタクトホールにおける第2電極(カソード)と、該第2電極と接続される第3電極との接続部分の外周の任意の2点間の最大距離を100μmとした有機EL表示装置を実施例1とした。また、比較例として、コンタクトホールにおける第2電極(カソード)と第3電極との接続部分の外周の任意の2点間の最大距離を200μm、及びコンタクトホールにおける第2電極(カソード)と第3電極との接続部分の外周の任意の2点間の最大距離を500μmとした有機EL表示装置を比較例1及び比較例2として準備した。
Claims (9)
- 複数の画素が設けられる画素領域において、前記複数の画素の各々に対応して設けられた第1電極と、
前記複数の画素に亘って設けられ、前記画素領域の外側に設けられたコンタクト領域に延長された第2電極と、
前記第1電極と前記第2電極との間に設けられた発光層と、
前記コンタクト領域に設けられた第3電極と、
前記第3電極を覆い、前記第3電極を露出するコンタクトホールが設けられた有機絶縁層と、
前記コンタクトホールに設けられ、外周の任意の2点間の最大距離が1μm以上100μm以下である、前記第2電極と前記第3電極との接続部と、
を備える、表示装置。 - 前記第2電極はMgAg合金を含む、請求項1に記載の表示装置。
- 前記第2電極の端部は、前記コンタクトホールの少なくとも一部と重畳する、請求項1に記載の表示装置。
- 前記発光層は、有機EL材料を含む、請求項1に記載の表示装置。
- 前記有機絶縁層は、
前記第1電極の第1面上に設けられる第1有機絶縁層と、
前記第1電極の前記第2面とは反対の第2面上に設けられ、前記第1電極と前記第2電極との間に設けられる第2有機絶縁層と、を含む請求項1に記載の表示装置。 - 複数の画素が設けられる画素領域において、前記複数の画素の各々に対応して設けられた第1電極と、
前記画素領域の周囲に設けられた周辺領域において、前記画素領域に隣接したコンタクト領域に延長され、前記複数の画素に亘って設けられた第2電極と、
前記第1電極と前記第2電極との間に設けられた発光層と、
前記コンタクト領域に設けられ、前記第2電極と電気的に接続される第3電極と、
前記コンタクト領域において、任意の点から1μm以上100μm以内の範囲で1つ以上設けられる、複数の島状の有機層と、
を備える、表示装置。 - 前記第2電極はMgAg合金を含む、請求項6に記載の表示装置。
- 前記第3電極は、前記コンタクト領域において、互いに隣接する複数の島状の有機層の間に設けられた開口を介して前記第2電極と接続される、請求項6に記載の表示装置。
- 前記発光層は、有機EL材料を含む、請求項6に記載に表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018117904A JP7108478B2 (ja) | 2018-06-21 | 2018-06-21 | 表示装置 |
US16/445,782 US11056668B2 (en) | 2018-06-21 | 2019-06-19 | Display device |
US17/340,717 US11621404B2 (en) | 2018-06-21 | 2021-06-07 | Substrate |
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JP2018117904A JP7108478B2 (ja) | 2018-06-21 | 2018-06-21 | 表示装置 |
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JP2019220382A true JP2019220382A (ja) | 2019-12-26 |
JP7108478B2 JP7108478B2 (ja) | 2022-07-28 |
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Families Citing this family (1)
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KR20200040046A (ko) * | 2018-10-08 | 2020-04-17 | 엘지디스플레이 주식회사 | 표시장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011040413A (ja) * | 2004-03-16 | 2011-02-24 | Semiconductor Energy Lab Co Ltd | 発光装置 |
KR20160074333A (ko) * | 2014-12-18 | 2016-06-28 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
KR20170038598A (ko) * | 2015-09-30 | 2017-04-07 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
JP2018097361A (ja) * | 2016-12-07 | 2018-06-21 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 有機発光表示装置およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
DE102006055067B4 (de) * | 2005-12-29 | 2017-04-20 | Lg Display Co., Ltd. | Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung |
JP5157825B2 (ja) * | 2008-10-29 | 2013-03-06 | ソニー株式会社 | 有機elディスプレイの製造方法 |
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